CN102820142B - Contact structure of electromechanical system switch - Google Patents
Contact structure of electromechanical system switch Download PDFInfo
- Publication number
- CN102820142B CN102820142B CN201110152251.8A CN201110152251A CN102820142B CN 102820142 B CN102820142 B CN 102820142B CN 201110152251 A CN201110152251 A CN 201110152251A CN 102820142 B CN102820142 B CN 102820142B
- Authority
- CN
- China
- Prior art keywords
- contact point
- dynamic
- switch
- basic unit
- dynamic contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Contacts (AREA)
Abstract
The invention discloses a contact structure of an electromechanical switch. According to the contact structure, a design of a printed circuit board and a movable contact point is utilized, various controlled motivations are allowed, and the contact structure has a good switch characteristic from a direct current to a high frequency. The contact structure has the advantages that the contact structure of the electromechanical system switch is designed by utilizing the printed circuit board processing and the movable contact point, the size of the electromechanical switch is substantially reduced, the costs of the electromechanical switch production and manufacture are lowered, the various controlled motivations are allowed, the contact structure can be matched with various actuating devices, the good switch characteristics, such as high isolation property and low insertion loss are achieved, ,and the applicable range of the contact structure is from the direct current to the microwave frequency.
Description
Technical field
The present invention relates to electric mechanical switch, in more detail, it relates to the contact structures (contact structure) of electric mechanical switch.
Background technology
Along with scientific and technological progress, the transmission speed requiring electronic signal is more and more fast, so that control switch or relay must be able to process up to 1GHz and above high-frequency signal (high frequency signal).But electromechanical switch now or relay are to electric current or the circuit of being turned on or off with Mechanical Design, their contact structures (contact structure) do not consider the problem by high-frequency signal when designing, so can only process direct current or extremely low frequency signal.If increase the processing unit of high-frequency signal in existing mechanical type contact structure, significantly to increase facing cost and cannot the difficulty of large-scale production.
Micro-electromechanical switch or relay (MEMS switch or relay) are used to solve the problem, briefly, it is the structure adopting semiconductor technology to manufacture on the silicon die, there are the potentiality of large-scale production, and its miniaturized design, the volume-diminished of switch or relay can be made.Typical mems switch, as depicted in figs. 1 and 2, mems switch 5 employs pair of parallel electrode 11 and 14, and they separated by thin dielectric layer 12 with by dielectric standoffs (dielectric standoff) 16 air gap limited or cavity 13.Electrode 14 is arranged on can on the barrier film of mechanical displacement or trave lling girder, and another electrode 11 engages over the substrate 10 and can not move freely.Mems switch 5 has two states, namely opens (as Fig. 1) or closed (as Fig. 2).
Mems switch device is very little, and the charged and effect that is static friction of dielectric usually disturbs reliable activation and the release of mems switch.And MEMS be used for high frequency electrical signal transmission time, need low conducting insertion loss (low insertion loss) and high disconnection isolation (high isolation), this part defines gap required between two electrodes 11 and 14.Therefore, be still very restricted when mems switch being used for high frequency electrical signal transmission.
In addition, MEMS adopts semiconductor technology manufacture, relate in its manufacturing process and constantly repeat oxidation, deposition, transfer printing and etching mode, its process is numerous and complicated, if and wherein one flow process makes a mistake, then whole assembly must re-start reprocessing, manufacturing time and amount of money cost high.
Summary of the invention
The object of the invention is to the contact structures proposing a kind of electromechanical system switch, it provides reliable switching characteristic, when switch " ON " time, there is low conducting insertion loss (low insertion loss), when switch " off " time, there is high disconnection isolation (high isolation).
For achieving the above object, the present invention is by the following technical solutions:
Contact structures for electromechanical system switch, these contact structures comprise: one to print the Static Contact point that conductive path is formed; One to print the dynamic Contact point that conductive path is formed; One to be held between this Static Contact point and this dynamic Contact point and the spacing making both for being arranged in parallel; This dynamic Contact point controlled actuation and displacement and this Static Contact point cantact.
Described spacing defines by putting on the actuating the electric power needed for means of these contact structures based on one.
Described spacing is the definition of the condition based on low voltage drive.
Described Static Contact point and described dynamic Contact point have impedance Control.
Described Static Contact point and described dynamic Contact point are microstrip lines.
Described Static Contact point and described dynamic Contact point have the live width preventing from contacting overlapping.
There is near described Static Contact point and described dynamic Contact point the tuning circuit of compensating impedance change.
The actuation gear of actuating described dynamic Contact point comprises the actuation gear based on electromagnetic force, the actuation gear based on piezoelectric effect or the actuation gear based on thermal effect.
Contact structures for electromechanical system switch, these contact structures comprise: at least one Static Contact point and at least one dynamic Contact point, between the two a spacing of being separated by based on a wall; This Static Contact point is the upper surface being located at a basic unit by printed circuit technique; This dynamic Contact point is located at by printed circuit technique the lower surface that a top layer has the region of floatability.
The lower surface of described basic unit has ground structure.
The lower surface of described basic unit has the wire pin of encapsulation.
Described wall has the window that can make described dynamic Contact point and described Static Contact point cantact.
The region of described floatability is given the breach at described top layer by attached and defined.
Described top layer is flexible print wiring board.
A kind of electric mechanical switch with above-mentioned contact structures.
The contact structures of electromechanical system switch of the present invention meet the condition of low voltage drive.
The contact structures of electromechanical system switch of the present invention allow various controlled actuation, comprise electrostatic force, electromagnetic force, piezoelectric effect, heat energy, can mate with traditional electromechanical actuator.
The contact structures scope of application of electromechanical system switch of the present invention from direct current (DC) to the switch of microwave frequency (microwave) or relay, and can process up to 1GHz and above high-frequency signal (high frequency signal).
The contact structures of electromechanical system switch of the present invention adopt PCB structure, and be applicable to low cost large-scale production, compared with traditional MEMS switch, manufacturing cost of the present invention is lower, simpler.
The contact structures of electromechanical system switch of the present invention can reduce the volume of electric mechanical switch.
The present invention adopts the contact structures of printed circuit board (PCB) (PCB) and the electromechanical system switch described in movable contact (moving contact) design.Although the framework based on printed circuit board (PCB) has been applied to radio frequency (RF) switch and thin film switch, the present invention has several feature not identical with the printed circuit plate base of radio frequency (RF) switch and thin film switch, comprising:
RF switch is capacitive, and it can not process direct current, and it can not be used as current switch or relay.But the present invention is applicable to switch or relay.
RF switch, by static-electronic driving, needs high driving voltage and very little driving gap (actuation gap), does not meet low voltage drive and the high disconnection isolation condition of switch or relay.
Printed circuit is integrated on PC plate by RF switch, but contact structures of the present invention are one independently to be constructed.
Thin film switch typically refers to key switch, but not electric mechanical switch, be applicable to switch power and be less than 1W, maximum working voltage 42V (DC) or 25V (DC), maximum operating currenbt are less than the workplace of 100mA, it is also not suitable for mating with traditional electromechanical actuator, more cannot process high-frequency signal (high frequency signal).
Accompanying drawing explanation
Fig. 1 is typical mems switch profile.
Fig. 2 is typical mems switch section and controlled actuation schematic diagram.
Fig. 3 is three-dimensional exploded view of the present invention.
Fig. 4 is assembled sectional view of the present invention.
Fig. 5 is controlled actuation schematic diagram of the present invention.
Fig. 6 is for adopting electric mechanical switch embodiment one of the present invention.
Fig. 7 is for adopting electric mechanical switch embodiment two of the present invention.
Fig. 8 is the embodiment one that the present invention and actuation gear carry out encapsulating.
Fig. 9 is the embodiment two that the present invention and actuation gear carry out encapsulating.
Embodiment
The present invention relates to the contact structures of electromechanical system switch, and there is the electric mechanical switch of these contact structures.Wherein:
Contact structures comprise: one to print the Static Contact point that conductive path is formed; One to print the dynamic Contact point that conductive path is formed; One to be held between this Static Contact point and this dynamic Contact point and the spacing making both for being arranged in parallel; This dynamic Contact point controlled actuation and displacement and this Static Contact point cantact.
Described spacing defines by putting on the actuating the electric power needed for means of these contact structures based on one.
Described spacing is the definition of the condition based on low voltage drive.
Described Static Contact point and described dynamic Contact point have impedance Control.
Described Static Contact point and described dynamic Contact point are microstrip lines.
Described Static Contact point and described dynamic Contact point have the live width preventing from contacting overlapping.
There is near described Static Contact point and described dynamic Contact point the tuning circuit of compensating impedance change.
The actuation gear of actuating described dynamic Contact point comprises the actuation gear based on electromagnetic force, the actuation gear based on piezoelectric effect or the actuation gear based on thermal effect.
These contact structures also can comprise: at least one Static Contact point and at least one dynamic Contact point, between the two a spacing of being separated by based on a wall; This Static Contact point is the upper surface being located at a basic unit by printed circuit technique; This dynamic Contact point is located at by printed circuit technique the lower surface that a top layer has the region of floatability.
The lower surface of described basic unit has ground structure.
The lower surface of described basic unit has the wire pin of encapsulation.
Described wall has the window that can make described dynamic Contact point and described Static Contact point cantact.
The region of described floatability is given the breach at described top layer by attached and defined.
Described top layer is flexible print wiring board.
Electric mechanical switch of the present invention has above-mentioned contact structures.
For ease of the central idea that the present invention represents is described, express with specific embodiment below.In embodiment, various difference is described liking in the ratio, size, deflection or the displacement that are suitable for illustrating, but not is drawn in the ratio of actual component, illustrates in advance.In the following description, similar assembly represents with identical numbering.
Be three-dimensional appearance and the cross section of contact structures 20 of the present invention as shown in Figure 3 and Figure 4.Described contact structures 20 are formed by several pieces printed circuit board (PCB)s (PCB) layered combinations.A basic unit (basic layer) 21, wall (spacing layer) 22 and a top layer (top layer) 23 from top to bottom respectively.
Basic unit 21 is hard structures, material including but not limited to insulating material, such as typical FR4, or the microwave material of certain frequency range can be responded, such as RO4003 HF link plate material.The bottom surface of basic unit 21 has ground structure (not shown), is metallized and obtain in the bottom surface of basic unit 21 by this ground structure.The end face of this basic unit 21 through printed circuit technique signalization line (signal trace), as Static Contact point (static contacts) 211.
Wall 22 is incorporated into the upper surface of this basic unit 21.The material of this wall 22 is including but not limited to any PCB material such as polyimides (kapton), typical FR4, or the solid slab having predetermined thickness made by acryl.This wall 22 has a window 221, it make the Static Contact of basic unit 21 point 211 not cover by this wall 22.
Top layer 23 is incorporated into the upper surface of this wall 22, it is made with flexible circuit board material (flexible circuit board material), its bottom surface is provided with plain conductor (metal trace), as dynamic Contact point (moving contacts) 231.Flexible electric circuit board around this dynamic Contact point 231 is cut is processed to form breach 232, make the surrounding of dynamic Contact point 231 for having the region 233 of floatability, described floatability refers to that this region 233 can move down time stressed, and during releasing external force, this region 233 is upwards answered back in level.
Finally, this basic unit 21, wall 22 and top layer 23 are compounded in together, as shown in Figure 4.
Above-mentioned Static Contact point 211 and dynamic Contact point 231 are the metallic conduction path of geometry, and they define based on the scope of application.Therefore, can according to the switch be suitable for or the usefulness of relay, decide the path layout of this Static Contact point 211 and dynamic Contact point 231, this makes the scope of application of contact structures 20 of the present invention become very large, all applicable to microwave frequency (microwave) from direct current (DC), can process up to 1GHz and above high-frequency signal (high frequency signal), and low conducting insertion loss (low insertion loss) can be realized.
Above-mentioned Static Contact point 211 and dynamic Contact point 231 all have specific impedance, are generally 50 ohm.Microstrip line (microstrip) has good impedance Control and applicable high-frequency signal passes through, and is therefore suitable for as above-mentioned Static Contact point 211 and dynamic Contact point 231.The width of metallic conduction path or microstrip line can be reduced, with reduce contact overlap phenomenon, so can increase electric mechanical switch and exist " off " state time high degree of isolation.Want in addition, it is considered that reduce the impedance variation of conductive path contact overlapping and generation, based on this, to establish collocation structure (compensation structure) to change with compensating impedance along metallic conduction path.In the present embodiment, the tuning circuit (tuning circuit) of layout near Static Contact point 211 and dynamic Contact point 231 is utilized to realize above-mentioned collocation structure.
Spacing (gap) between Static Contact point 211 and dynamic Contact point 231 defines according to the thickness of this wall 22 and the electricity needs of the means of actuating (actuation) of actuating these contact structures 20.But, for guaranteeing that dynamic Contact point 231 certain can touch Static Contact point 211, and the condition of low voltage drive, narrow spacing (gap) is desirable.
As shown in Figure 5, the means of actuating put on this contact structures 20, and the region 233 making this top layer 23 have floatability moves down, and the window 221 of this wall 22 allows the dynamic Contact point 231 moved down can touch the Static Contact point 211 of this basic unit 21.Described means of actuating are including but not limited to the actuation gear based on electrostatic force, the actuation gear based on electromagnetic force, the actuation gear based on piezoelectric effect, the actuation gear based on thermal effect.Be coupled with these contact structures 20 by actuation gear, the drive disk assembly of actuation gear is contacted with the region 233 that this top layer 23 has floatability.
Describe the embodiment that different actuation gears 30 and 40 is coupled with contact structures 20 of the present invention shown in Fig. 6 and Fig. 7 respectively, this is only the description done for disclosing patent specification in detail, and unrestricted practical range of the present invention.
In Fig. 6, actuation gear 30 is electromechanicals, the passage 53 that its supporter 31 is preset by window 221 and the basic unit 21 of this wall 22 and the lead frame 54 (as Fig. 9) that is welded in bottom basic unit 21.The drive disk assembly 32 of this actuation gear 30 is contacted with the region 233 this top layer 23 with floatability.The motion of this drive disk assembly 32 drives this region 233 toward bottom offset, makes dynamic Contact point 231 touch Static Contact point 211.
In Fig. 7, actuation gear 40 is electromagnetic types, in the printed circuit processing procedure of these contact structures 20, printed coil 41 is built in basic unit 21 bottom surface of these contact structures 20, magnetic material 42 is built in the end face of this top layer 23, and this printed coil 41 coated.Electric current is by this printed coil 41, and magnetic material 42 makes the dynamic Contact of top layer 23 point 231 touch this Static Contact point 211 toward bottom offset.
Fig. 8 describes the encapsulation embodiment of contact structures 20 and actuation gear 30 with Figure 9 shows that, they are all adopt known semiconductor packaging to encapsulate.These embodiments are only the descriptions done for disclosing patent specification in detail, and unrestricted practical range of the present invention.In addition, these constructions of switch may not encapsulate separately, but make switching network overall package more on a printed-wiring board on demand.
As shown in Figure 8, actuation gear 30 has completed with contact structures 20 and has been coupled, and insulated substrate or conductive earth plate 50 are fixed on bottom surface in the basic unit 21 of contact structures 20.The conductive path of contact structures 20 and the coil of actuation gear 40 are connected to default wire pin 52 by wire 51.Whole structure is closed by one enclosing cover 60.
As shown in Figure 9, actuation gear 30 has completed with contact structures 20 and has been coupled, and these contact structures 20 encapsulate with the some of itself.The layout of ground connection (ground) and wire pin (leads) that the bottom surface of basic unit 21 is prefabricated, the conductive path of basic unit 21 end face connects with corresponding wire pin (leads) by the passage (VIA) 55 of basic unit 21.This basic unit 21 is coupling on the lead frame 54 that matches.The passage 53 that the supporter 31 of actuation gear 30 is preset by window 221 and the basic unit 21 of this wall 22 and be welded in lead frame 54.Whole structure is closed by one enclosing cover 60.
No matter encapsulation technology why, the design of wire pin all must consider the interference not causing this contact structures 20 impedance matching, in addition, also must safeguard the usefulness of process high-frequency signal.
To sum up institute is old, core of the present invention is to adopt printed circuit board (PCB) (PCB) processing procedure and movable contact (moving contact) to design the contact structures of electric mechanical switch, it makes the volume of electric mechanical switch significantly reduce, reduce electric mechanical switch to produce and manufacturing cost, allow various controlled actuation (actuation), can mate with various actuation gear, and there is good switching characteristic, such as high isolation and be inserted into consume, its scope of application is from direct current (DC) to microwave frequency (microwave).
Claims (8)
1. contact structures for electromechanical system switch, it transmits a microwave signal, it is characterized in that these contact structures comprise:
One basic unit be made up of printed circuit board (PCB), the upper surface of this basic unit has to print the Static Contact point that conductive path is formed, and has the tuning circuit of compensating impedance change near this Static Contact point;
One top layer be made up of flexible circuit board material, the lower surface of this top layer has to print the dynamic Contact point that conductive path is formed, flexible electric circuit board around this dynamic Contact point is given specific cutting processing formation breach by attached, makes the surrounding of dynamic Contact point become floatability region; There is near this dynamic Contact point the tuning circuit of compensating impedance change; And
One wall, be compound between this basic unit and this top layer, this wall has a window, it make the Static Contact of this basic unit point not cover by this wall; The structural thickness of this wall keeps having the spacing be arranged in parallel between this Static Contact point and this dynamic Contact point;
Wherein, this dynamic Contact point and this Static Contact point are that microstrip line formed, in order to transmit this microwave signal between this dynamic Contact point and this Static Contact point, this Static Contact point is with this dynamic Contact point and have specific live width overlapping being contacted minimize to improve isolation;
Wherein, this dynamic Contact point controlled actuation and displacement and this Static Contact point cantact and form a microstrip waveguide to transmit this microwave signal, this tuning circuit near this Static Contact point and this dynamic Contact point compensates because this linewidth difference of this dynamic Contact point and this Static Contact point is apart from the impedance variation caused.
2. contact structures as claimed in claim 1, it is characterized in that, described spacing defines by putting on the actuating the electric power needed for means of these contact structures based on one.
3. contact structures as claimed in claim 1, it is characterized in that, described spacing is the definition of the condition based on low voltage drive.
4. contact structures as claimed in claim 1, it is characterized in that, described Static Contact point and described dynamic Contact point have impedance Control.
5. contact structures as claimed in claim 1, it is characterized in that, the actuation gear of actuating described dynamic Contact point comprises the actuation gear based on electromagnetic force, the actuation gear based on piezoelectric effect or the actuation gear based on thermal effect.
6. contact structures as claimed in claim 1, it is characterized in that, the lower surface of described basic unit has ground structure.
7. contact structures as claimed in claim 1, is characterized in that, the lower surface of described basic unit has the wire pin of encapsulation.
8. one kind has the electric mechanical switch of contact structures as claimed in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110152251.8A CN102820142B (en) | 2011-06-08 | 2011-06-08 | Contact structure of electromechanical system switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110152251.8A CN102820142B (en) | 2011-06-08 | 2011-06-08 | Contact structure of electromechanical system switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102820142A CN102820142A (en) | 2012-12-12 |
| CN102820142B true CN102820142B (en) | 2015-01-21 |
Family
ID=47304203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110152251.8A Active CN102820142B (en) | 2011-06-08 | 2011-06-08 | Contact structure of electromechanical system switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102820142B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060067840A1 (en) * | 2004-09-24 | 2006-03-30 | Takashi Kawakubo | Piezoelectric MEMS element and tunable filter equipped with the piezoelectric MEMS element |
| TWM291567U (en) * | 2005-12-23 | 2006-06-01 | Lite On Technology Corp | Membrane switch |
| US20070163866A1 (en) * | 2006-01-17 | 2007-07-19 | Huo-Lu Tsai | Printed circuit board with thin film switches for a keyboard |
| CN101983412A (en) * | 2008-03-31 | 2011-03-02 | 松下电工株式会社 | Mems switch and method for manufacturing the same |
-
2011
- 2011-06-08 CN CN201110152251.8A patent/CN102820142B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060067840A1 (en) * | 2004-09-24 | 2006-03-30 | Takashi Kawakubo | Piezoelectric MEMS element and tunable filter equipped with the piezoelectric MEMS element |
| TWM291567U (en) * | 2005-12-23 | 2006-06-01 | Lite On Technology Corp | Membrane switch |
| US20070163866A1 (en) * | 2006-01-17 | 2007-07-19 | Huo-Lu Tsai | Printed circuit board with thin film switches for a keyboard |
| CN101983412A (en) * | 2008-03-31 | 2011-03-02 | 松下电工株式会社 | Mems switch and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102820142A (en) | 2012-12-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2648198B1 (en) | Integrated planar electromechanical contactors | |
| US8525623B2 (en) | Integrated electromechanical relays | |
| US6587021B1 (en) | Micro-relay contact structure for RF applications | |
| CN100437986C (en) | Composite electronic component | |
| US6689976B1 (en) | Electrically isolated liquid metal micro-switches for integrally shielded microcircuits | |
| CN104488134A (en) | Gap waveguide structures for thz applications | |
| JP2003317580A (en) | Double sided liquid metal micro switch | |
| KR20130109166A (en) | Magnetically actuated micro-electro-mechanical capacitor switches in laminate | |
| CN103120038A (en) | Structural body and wiring substrate | |
| US8698310B2 (en) | Structure for signal line, manufacturing method for signal line and switch using the signal line | |
| CN101924044B (en) | Method for producing a high power semiconductor module and high power semiconductor module with a connection device | |
| CN102820142B (en) | Contact structure of electromechanical system switch | |
| TWI527071B (en) | Contact structure of electromechanical system switch | |
| Goins et al. | Design of a 20 GHz low loss ohmic contact RF MEMS switch | |
| JP2006252956A (en) | Micro-machine switch and electronic apparatus | |
| WO2003050834A1 (en) | Low voltage mem switch | |
| US9196429B2 (en) | Contact structure for electromechanical switch | |
| Spasos et al. | On the design of an ohmic RF MEMS switch for reconfigurable microstrip antenna applications | |
| JP2011070950A (en) | Mems rf switch | |
| KR101901212B1 (en) | Heat-driving switch structure and method for manufacturing the same | |
| CN102856085B (en) | RF (Radio-Frequency) MEMS (Micro Electro Mechanical System) switch and manufacturing method thereof | |
| Kim et al. | High power laminate MEMS RF switch | |
| WO2024149177A1 (en) | Relay and electrical device | |
| US6909346B1 (en) | Switching arrangement using HDI interconnects and MEMS switches | |
| JP2004048176A (en) | High frequency switch, single pole double-throw switch, and multipole multi-throw switch |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |