CN102820142A - Contact structure of electromechanical system switch - Google Patents
Contact structure of electromechanical system switch Download PDFInfo
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- CN102820142A CN102820142A CN2011101522518A CN201110152251A CN102820142A CN 102820142 A CN102820142 A CN 102820142A CN 2011101522518 A CN2011101522518 A CN 2011101522518A CN 201110152251 A CN201110152251 A CN 201110152251A CN 102820142 A CN102820142 A CN 102820142A
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Abstract
The invention discloses a contact structure of an electromechanical switch. According to the contact structure, a design of a printed circuit board and a movable contact point is utilized, various controlled motivations are allowed, and the contact structure has a good switch characteristic from a direct current to a high frequency. The contact structure has the advantages that the contact structure of the electromechanical system switch is designed by utilizing the printed circuit board processing and the movable contact point, the size of the electromechanical switch is substantially reduced, the costs of the electromechanical switch production and manufacture are lowered, the various controlled motivations are allowed, the contact structure can be matched with various actuating devices, the good switch characteristics, such as high isolation property and low insertion loss are achieved, ,and the applicable range of the contact structure is from the direct current to the microwave frequency.
Description
Technical field
The present invention relates to electric mechanical switch, say in more detail, it relates to the contact structures (contact structure) of electric mechanical switch.
Background technology
Along with scientific and technological progress, require the transmission speed of electronic signal more and more fast, so that control switch or relay must be able to be handled up to 1GHz and above high-frequency signal (high frequency signal).Yet electromechanical switch now or relay are to design conducting or turn-off current or circuit with mechanical type; Their contact structures (contact structure) are not considered the problem through high-frequency signal when design, so can only handle direct current or extremely low frequency signal.If in the prior mechanical contact structures, increase the processing unit of high-frequency signal, will face that cost significantly increases and difficulty that can't large-scale production.
Micro-electromechanical switch or relay (MEMS switch or relay) are used to address the above problem; Briefly, it is the structure that on silicon, adopts semiconductor technology to make, and has the potentiality of large-scale production; And its miniaturized design, can make the volume-diminished of switch or relay.The typical MEMS switch, as depicted in figs. 1 and 2, mems switch 5 has used pair of parallel electrode 11 and 14, and they are thin dielectric layer 12 and air gap or 13 separations of cavity of being limited dielectric standoffs (dielectric standoff) 16.But electrode 14 is installed on the barrier film or trave lling girder of mechanical displacement, and another electrode 11 is bonded on the substrate 10 and can not moves freely.Mems switch 5 has two states, promptly opens (like Fig. 1) or closed (like Fig. 2).
The mems switch device is very little, and dielectric is charged usually to disturb the reliable activation and the release of mems switch with effect static friction.And MEMS is used for high-frequency electronic signal when transmission, needs low conducting to insert loss (low insertion loss) and high disconnection isolation (high isolation), and this partly defines required gap between two electrodes 11 and 14.Still receive very big restriction when therefore, mems switch being used for the transmission of high-frequency electronic signal.
In addition; MEMS adopts the semiconductor technology manufacturing; Relate in its manufacturing process and constantly repeat oxidation, deposition, transfer printing and etching mode, its process operation is numerous and complicated, and if wherein one flow process makes a mistake; Then whole assembly must be reprocessed again, and manufacturing time and amount of money cost are high.
Summary of the invention
The objective of the invention is to propose a kind of contact structures of Mechatronic Systems switch; It provides reliable switching characteristic, when switch " ON " time, have low conducting and insert loss (low insertion loss); When switch " off " time, have high disconnection isolation (high isolation).
For realizing above-mentioned purpose, the present invention adopts following technical scheme:
A kind of contact structures of Mechatronic Systems switch, these contact structures comprise: the Static Contact point that constituted with the printing conductive path; The one dynamic contact point that constituted with the printing conductive path; One to remain between this Static Contact point and this dynamic contact point and make both be the spacing that is arranged in parallel; This dynamic contact point controlled actuation and displacement contacts with this Static Contact point.
Said spacing is by putting on the required electric power of the means of actuating of these contact structures and define based on one.
Said spacing is based on the definition of the condition of low voltage drive.
Said Static Contact point and said dynamic contact point have impedance Control.
Said Static Contact point and said dynamic contact point are microstrip lines.
Said Static Contact point has the live width that prevents to contact overlapping with said dynamic contact point.
Has the tuning circuit that compensating impedance changes near said Static Contact point and the said dynamic contact point.
The actuation gear of actuating said dynamic contact point comprises actuation gear based on electromagnetic force, based on the actuation gear of piezoelectric effect or based on the actuation gear of thermal effect.
A kind of contact structures of Mechatronic Systems switch, these contact structures comprise: at least one Static Contact point and at least one dynamic contact point, between the two based on a wall and the spacing of being separated by; This Static Contact point is a upper surface of being located at a basic unit through printed circuit technique; This dynamic contact point is to be located at the lower surface that a top layer has the zone of floatability through printed circuit technique.
The lower surface of said basic unit has ground structure.
The lower surface of said basic unit has the lead pin of encapsulation usefulness.
Said wall has a window that said dynamic contact point is contacted with said Static Contact point.
The zone of said floatability is to give at the breach of said top layer and define by attaching.
Said top layer is a flexible print wiring board.
A kind of electric mechanical switch with above-mentioned contact structures.
The contact structures of Mechatronic Systems switch of the present invention meet the condition of low voltage drive.
The contact structures of Mechatronic Systems switch of the present invention allow various controlled actuation, comprise electrostatic force, electromagnetic force, piezoelectric effect, heat energy, can mate with traditional electromechanical actuator.
Switch or the relay of the contact structures scope of application of Mechatronic Systems switch of the present invention from direct current (DC) to microwave frequency (microwave), and can handle up to 1GHz and above high-frequency signal (high frequency signal).
The contact structures of Mechatronic Systems switch of the present invention adopt the PCB structure, are fit to low-cost large-scale production, compare with the traditional MEMS switch, and manufacturing cost of the present invention is lower, simpler.
The contact structures of Mechatronic Systems switch of the present invention can be dwindled the volume of electric mechanical switch.
The present invention adopts the contact structures of printed circuit board (PCB) (PCB) and the described Mechatronic Systems switch of movable contact (moving contact) design.Though, be that basic framework has been applied to radio frequency (RF) switch and thin film switch with the printed circuit board (PCB),, the present invention has the printed circuit plate base of several characteristics and radio frequency (RF) switch and thin film switch inequality, comprising:
The RF switch is capacitive, and it can not handle direct current, and it can not be used as current switch or relay.But the present invention is applicable to switch or relay.
The RF switch is power-actuated by static, needs high driving voltage and very little driving gap (actuation gap), does not meet the low voltage drive of switch or relay and high disconnection and isolates condition.
The RF switch is integrated in printed circuit on the PC plate, but contact structures of the present invention are independently structures.
Thin film switch typically refers to key switch; But not electric mechanical switch; Be applicable to that switch power is less than 1W; Maximum working voltage 42V (DC) or 25V (DC), maximum operating currenbt are less than the workplace of 100mA, and it also is not suitable for and traditional electromechanical actuator coupling, more can't handle high-frequency signal (high frequency signal).
Description of drawings
Fig. 1 is a typical MEMS switch profile.
Fig. 2 is typical MEMS switch section and controlled actuation sketch map.
Fig. 3 is a three-dimensional exploded view of the present invention.
Fig. 4 is an assembled sectional view of the present invention.
Fig. 5 is a controlled actuation sketch map of the present invention.
Fig. 6 is for adopting electric mechanical switch embodiment one of the present invention.
Fig. 7 is for adopting electric mechanical switch embodiment two of the present invention.
Fig. 8 is the embodiment one that the present invention and actuation gear encapsulate.
Fig. 9 is the embodiment two that the present invention and actuation gear encapsulate.
Embodiment
The present invention relates to the contact structures of Mechatronic Systems switch, and the electric mechanical switch with these contact structures.Wherein:
Contact structures comprise: the Static Contact point that constituted with the printing conductive path; The one dynamic contact point that constituted with the printing conductive path; One to remain between this Static Contact point and this dynamic contact point and make both be the spacing that is arranged in parallel; This dynamic contact point controlled actuation and displacement contacts with this Static Contact point.
Said spacing is by putting on the required electric power of the means of actuating of these contact structures and define based on one.
Said spacing is based on the definition of the condition of low voltage drive.
Said Static Contact point and said dynamic contact point have impedance Control.
Said Static Contact point and said dynamic contact point are microstrip lines.
Said Static Contact point has the live width that prevents to contact overlapping with said dynamic contact point.
Has the tuning circuit that compensating impedance changes near said Static Contact point and the said dynamic contact point.
The actuation gear of actuating said dynamic contact point comprises actuation gear based on electromagnetic force, based on the actuation gear of piezoelectric effect or based on the actuation gear of thermal effect.
These contact structures also can comprise: at least one Static Contact point and at least one dynamic contact point, between the two based on a wall and the spacing of being separated by; This Static Contact point is a upper surface of being located at a basic unit through printed circuit technique; This dynamic contact point is to be located at the lower surface that a top layer has the zone of floatability through printed circuit technique.
The lower surface of said basic unit has ground structure.
The lower surface of said basic unit has the lead pin of encapsulation usefulness.
Said wall has a window that said dynamic contact point is contacted with said Static Contact point.
The zone of said floatability is to give at the breach of said top layer and define by attaching.
Said top layer is a flexible print wiring board.
Electric mechanical switch of the present invention has above-mentioned contact structures.
For ease of the central idea represented of explanation the present invention, below express with specific embodiment.Various differences are described in the ratio that is suitable for explaining, size, deflection or displacement liking among the embodiment, but not draw in the ratio of actual component, explanation in advance.In the following explanation, similarly assembly is represented with identical numbering.
Like Fig. 3 and shown in Figure 4 for the three-dimensional appearance and the cross section of contact structures 20 of the present invention.Described contact structures 20 are by one on top of another the combining of several pieces printed circuit board (PCB)s (PCB).Be respectively a basic unit (basic layer) 21, one wall (spacing layer) 22 and one top layer (top layer) 23 from top to bottom.
Finally, this basic unit 21, wall 22 and top layer 23 are compounded in together, and be as shown in Figure 4.
Above-mentioned Static Contact point 211 is the metallic conduction path of geometry with dynamic contact point 231, and they are based on the scope of application and define.Therefore; Can be according to the switch that is suitable for or the usefulness of relay; Decide the path layout of this Static Contact point 211 and dynamic contact point 231, this makes the scope of application of contact structures 20 of the present invention become very big, all is suitable for to microwave frequency (microwave) from direct current (DC); Can handle, and can realize low conducting insertion loss (low insertion loss) up to 1GHz and above high-frequency signal (high frequency signal).
Above-mentioned Static Contact point 211 all has specific impedance with dynamic contact point 231, is generally 50 ohm.Microstrip line (microstrip) has good impedance Control and suitable high-frequency signal passes through, and therefore is suitable for as above-mentioned Static Contact point 211 and dynamic contact point 231.Can reduce the width of metallic conduction path or microstrip line,, so can increase electric mechanical switch and exist to reduce the phenomenon that contact overlaps " off " high degree of isolation property during state.What will consider in addition is to reduce the conductive path contact to overlap and the impedance variations of generation, based on this, establishes collocation structure (compensation structure) along the metallic conduction path and changes with compensating impedance.In the present embodiment, utilize layout to realize above-mentioned collocation structure at Static Contact point 211 and near the tuning circuit (tuning circuit) the dynamic contact point 231.
As shown in Figure 5, the means of actuating put on this contact structures 20, and the zone 233 that makes this top layer 23 have floatability moves down, and the dynamic contact point 231 that the window 221 of this wall 22 allows to move down can touch the Static Contact point 211 of this basic unit 21.The described means of actuating comprise but be not limited to based on electrostatic force actuation gear, based on the actuation gear of electromagnetic force, based on the actuation gear of piezoelectric effect, based on the actuation gear of thermal effect.With actuation gear and 20 couplings of this contact structures, the drive disk assembly of actuation gear is contacted with the zone 233 that this top layer 23 has floatability.
Fig. 6 and different actuation gear 30 and 40 and the embodiment of contact structures of the present invention 20 coupling described respectively shown in Figure 7, this only is for disclosing description that patent specification is done and unrestricted practical range of the present invention in detail.
Among Fig. 6, actuation gear 30 is electromechanicals, the lead frame 54 (like Fig. 9) that window 221 and the basic unit 21 preset passages 53 of its supporter 31 through this wall 22 are welded in basic unit 21 bottoms.The drive disk assembly 32 of this actuation gear 30 is contacted with the zone 233 that has floatability on this top layer 23.The motion of this drive disk assembly 32 drive should zone 233 toward bottom offsets, make dynamic contact point 231 touch Static Contact point 211.
Among Fig. 7, actuation gear 40 is electromagnetic types, in the printed circuit processing procedure of these contact structures 20, printed coil 41 is built in basic unit 21 bottom surfaces of these contact structures 20, magnetic material 42 is built in the end face of this top layer 23, and coats this printed coil 41.Electric current is through this printed coil 41, and magnetic material 42 makes the dynamic contact point 231 of top layer 23 touch this Static Contact point 211 toward bottom offset.
Fig. 8 and shown in Figure 9 for describing the encapsulation embodiment of contact structures 20 and actuation gear 30, they all are to adopt the known semiconductor encapsulation technology to encapsulate.These embodiment only are for disclosing description that patent specification is done and unrestricted practical range of the present invention in detail.In addition, these constructions of switch possibly not encapsulate separately, but on printed substrate, process switching network totally encapsulation more on demand.
As shown in Figure 8, actuation gear 30 has been accomplished coupling with contact structures 20, and insulated substrate or conductive earth plate 50 are fixed in the bottom surface in the basic unit 21 of contact structures 20.The coil of the conductive path of contact structures 20 and actuation gear 40 can be connected to preset lead pin 52 through lead 51.One enclosing cover 60 seals whole structure.
As shown in Figure 9, actuation gear 30 has been accomplished coupling with contact structures 20, and these contact structures 20 encapsulate with the some of itself.The layout of the bottom surface of basic unit 21 is prefabricated ground connection (ground) and lead pin (leads), the conductive path of basic unit's 21 end faces can connect with corresponding lead pin (leads) through the passage (VIA) 55 of basic unit 21.This basic unit 21 is coupling on the lead frame 54 that matches.The supporter 31 of actuation gear 30 is welded in lead frame 54 through window 221 and basic unit's 21 preset passages 53 of this wall 22.One enclosing cover 60 seals whole structure.
No matter encapsulation technology is why, the design of lead pin all must consideration cause the interference of these contact structures 20 impedance matchings, in addition, and the also essential usefulness of handling high-frequency signal of safeguarding.
To sum up institute is old; Core of the present invention is to adopt printed circuit board (PCB) (PCB) processing procedure and movable contact (moving contact) to design the contact structures of electric mechanical switch; It makes the volume of electric mechanical switch significantly dwindle, and has reduced electric mechanical switch production and manufacturing cost, allows various controlled actuation (actuation); Can mate with various actuation gears; And have a good switching characteristic, for example high isolation and be inserted into consume, its scope of application from direct current (DC) to microwave frequency (microwave).
Claims (15)
1. the contact structures of a Mechatronic Systems switch is characterized in that these contact structures comprise:
The Static Contact point that constituted with the printing conductive path;
The one dynamic contact point that constituted with the printing conductive path;
One to remain between this Static Contact point and this dynamic contact point and make both be the spacing that is arranged in parallel;
This dynamic contact point controlled actuation and displacement contacts with this Static Contact point.
2. contact structures as claimed in claim 1 is characterized in that, said spacing is by putting on the required electric power of the means of actuating of these contact structures and define based on one.
3. contact structures as claimed in claim 1 is characterized in that said spacing is based on the definition of the condition of low voltage drive.
4. contact structures as claimed in claim 1 is characterized in that, said Static Contact point and said dynamic contact point have impedance Control.
5. contact structures as claimed in claim 1 is characterized in that, said Static Contact point and said dynamic contact point are microstrip lines.
6. contact structures as claimed in claim 1 is characterized in that, said Static Contact point has the live width that prevents to contact overlapping with said dynamic contact point.
7. contact structures as claimed in claim 1 is characterized in that, have the tuning circuit that compensating impedance changes near said Static Contact point and the said dynamic contact point.
8. contact structures as claimed in claim 1 is characterized in that, the actuation gear of actuating said dynamic contact point comprises actuation gear based on electromagnetic force, based on the actuation gear of piezoelectric effect or based on the actuation gear of thermal effect.
9. the contact structures of a Mechatronic Systems switch, it is characterized in that: these contact structures comprise:
At least one Static Contact point and at least one dynamic contact point are between the two based on a wall and the spacing of being separated by;
This Static Contact point is located at the upper surface of a basic unit through printed circuit technique;
This dynamic contact point is located at the lower surface in the zone with floatability of a top layer through printed circuit technique.
10. contact structures as claimed in claim 9 is characterized in that the lower surface of said basic unit has ground structure.
11. contact structures as claimed in claim 10 is characterized in that, the lower surface of said basic unit has the lead pin of encapsulation usefulness.
12. contact structures as claimed in claim 9 is characterized in that, said wall has a window that said dynamic contact point is contacted with said Static Contact point.
13. contact structures as claimed in claim 9 is characterized in that, the zone of said floatability is defined by the breach of said top layer.
14. contact structures as claimed in claim 9 is characterized in that, said top layer is a flexible print wiring board.
15. electric mechanical switch with contact structures as claimed in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110152251.8A CN102820142B (en) | 2011-06-08 | 2011-06-08 | Contact structure of electromechanical system switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110152251.8A CN102820142B (en) | 2011-06-08 | 2011-06-08 | Contact structure of electromechanical system switch |
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| Publication Number | Publication Date |
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| CN102820142A true CN102820142A (en) | 2012-12-12 |
| CN102820142B CN102820142B (en) | 2015-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110152251.8A Active CN102820142B (en) | 2011-06-08 | 2011-06-08 | Contact structure of electromechanical system switch |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060067840A1 (en) * | 2004-09-24 | 2006-03-30 | Takashi Kawakubo | Piezoelectric MEMS element and tunable filter equipped with the piezoelectric MEMS element |
| TWM291567U (en) * | 2005-12-23 | 2006-06-01 | Lite On Technology Corp | Membrane switch |
| US20070163866A1 (en) * | 2006-01-17 | 2007-07-19 | Huo-Lu Tsai | Printed circuit board with thin film switches for a keyboard |
| CN101983412A (en) * | 2008-03-31 | 2011-03-02 | 松下电工株式会社 | Mems switch and method for manufacturing the same |
-
2011
- 2011-06-08 CN CN201110152251.8A patent/CN102820142B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060067840A1 (en) * | 2004-09-24 | 2006-03-30 | Takashi Kawakubo | Piezoelectric MEMS element and tunable filter equipped with the piezoelectric MEMS element |
| TWM291567U (en) * | 2005-12-23 | 2006-06-01 | Lite On Technology Corp | Membrane switch |
| US20070163866A1 (en) * | 2006-01-17 | 2007-07-19 | Huo-Lu Tsai | Printed circuit board with thin film switches for a keyboard |
| CN101983412A (en) * | 2008-03-31 | 2011-03-02 | 松下电工株式会社 | Mems switch and method for manufacturing the same |
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| Publication number | Publication date |
|---|---|
| CN102820142B (en) | 2015-01-21 |
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