CN102820010A - Electrical level shifter and voltage-boosting drive circuit - Google Patents
Electrical level shifter and voltage-boosting drive circuit Download PDFInfo
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- CN102820010A CN102820010A CN2011101683990A CN201110168399A CN102820010A CN 102820010 A CN102820010 A CN 102820010A CN 2011101683990 A CN2011101683990 A CN 2011101683990A CN 201110168399 A CN201110168399 A CN 201110168399A CN 102820010 A CN102820010 A CN 102820010A
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Abstract
The invention relates to an electrical level shifter and a relevant voltage-boosting drive circuit. The electrical level shifter comprises an input stage and an output stage, wherein the input stage is provided with an input stage switch which is used for receiving an input signal, the switch is turned on selectively according to the input signal, and the output stage is in series connection with the input stage and is used for outputting a gate drive signal. When the input stage switch is turned on, the gate drive signal is in a low logic level, and when the input stage switch is turned off, the gate drive signal is in a high logic level. Logic levels of the input signal and the gate drive signal are the same.
Description
Technical field
The present invention is about a kind of level shifter, refer to especially a kind of have avoid opening by mistake the level shifter that opens the power switch function.
Background technology
In the LCD TV screen, the operating voltage of image converter (scaler), for power saving with save considering of chip area, generally use a lower operating voltage, for example be 3.3V.But; (back light) backlight light source of LCD TV screen, its possibly be light emitting diode (light-emitting diode, LED) or cold-cathode fluorescence lamp (cold-cathode fluorescent lamp; CCFL), its operating voltage maybe be up to 40V.Therefore, just need power supply changeover device (power converter), an operating power is transformed into another operating power.
A kind of power supply changeover device that widely uses be the switch type power supplying device (switched-mode power supply, SMPS), because of having outstanding conversion efficiency (power conversion efficiency).As its name shown in, SMPS has a power switch more, in order to control flow through an Inductive component energy storage or release can, to reach the purpose of converting electrical energy.
Just, this power switch need bear quite high voltage mostly, therefore, and the height that the critical voltage of the control gate of power switch is often also suitable.With the signal that image converter was produced of operating power 3.3V power supply, its ceiling voltage possibly have only 3.3V, and is not enough to drive the control gate of general power switch.Therefore; Need a level shifter (level shifter) or one drive circuit (driver), image converter is exported, belong to the drive signal of 3.3V system; Be displaced to the grid drive signal of a voltage higher voltage system, use driving a power switch.
Design need be considered power supply order (power-on sequence) during level shifter, also need consider can not wrong unlatching one power switch situation.If a power switch is opened by mistake in the power supply order process and opened, possibly cause an Inductive component saturated, and cause danger.
Summary of the invention
The embodiment of the invention discloses a kind of level shifter, includes a grounded base amplifier and a current amplifier.This grounded base amplifier has one first pair of junction transistor.This first pair of junction transistor has a base stage and is coupled to one first predeterminated voltage, and an emitter-base bandgap grading receives an input signal, and a collection utmost point is coupled to one first voltage source.This current amplifier has this collection utmost point that an input end is coupled to this first pair of junction transistor by this first voltage fed, and an output terminal is in order to export a grid drive signal.This first predeterminated voltage is produced by this first voltage fed; And this input signal produces by one second voltage fed, and compared to this first voltage source, this second voltage source is a low-voltage source.
The embodiment of the invention discloses a kind of level shifter, includes an input stage and an output stage.This input stage has an input stage switch and supplies to receive an input signal.This switch is optionally opened according to this input signal.This output stage is serially connected with this input stage, supplies output one grid drive signal.Open when this input stage switch, this grid drive signal is in a low logic level; When this input stage switch is closed, this grid drive signal is in a high logic level.This input signal is consistent with the logic level of this grid drive signal.
The embodiment of the invention discloses a kind of booster driving circuit, includes one first voltage source, a linear voltage decreasing device, an image converter, a level shifter and a boost converter.This linear voltage decreasing device receives this first voltage source to produce one second voltage source.Compared to this first voltage source, this second voltage source is a low-voltage source.This image converter receives this second voltage source, includes a grid pre-driver.This grid pre-driver provides an input signal.This level shifter is coupled to this grid pre-driver, includes an input stage and an output stage.This input stage receives this input signal.This output stage is serially connected with this input stage, supplies output one grid drive signal.This input stage and this output stage are accepted a plurality of fixed reference potential respectively.These a plurality of fixed reference potential are produced by this first voltage fed.This input signal is produced by this second voltage fed.When the voltage of this first voltage source was increased to a preset WV, this input signal was consistent with the logic level of this grid drive signal.This boost converter includes a power switch.This power switch is coupled to this level shifter, in order to receive this grid drive signal and to export a driving voltage.
Description of drawings
Fig. 1 is the skeleton view of a display.
The level shifter of Fig. 2 displayed map 1.
The primary clustering symbol description
10 boost converters
13 linear voltage decreasing devices
14 level shifters
15 power switchs
16 grid pre-drivers
18 pulse width modulation controllers
20 image converters
62 input stages
64 output stages
The two junction transistors of BBPNP
The two junction transistors of BF PNP
The two junction transistors of BTNPN
The GATE control gate
The N1 contact
The NC contact
The OUT output terminal
R1 resistance
The SDRV drive signal
The SGATE drive signal
SP1, SPB, SPU signal path
The VCC voltage source
The VIN voltage source
The Z Zener diode
Embodiment
Fig. 1 has shown according to the present invention and has implemented, and is applicable to the circuit of a LCD screen.Input voltage source VIN for example is 12V, as the primary power (major voltage source) of entire circuit.Boost converter (booster) 10 on output terminal OUT, provides a higher voltage source, as driving voltage backlight.For example its voltage is 40V, in order to drive several LED serials (LED chains).The linear voltage decreasing device (low drop-out, LDO) 13, produce the voltage source V CC of a 3.3V, image converter 20 is given in power supply.Power supply order is considered; After generally being designed to voltage source V IN and approximately being ready for; For example the voltage of voltage source V IN is high to very near 12V; Linear voltage decreasing device 13 just begins to make the voltage of voltage source V CC to rise, draw and lift 3.3V gradually from 0V after, just drive image converter 20 and start working.
Fig. 2 is the detailed circuit diagram of Fig. 1 level shifter 14.Level shifter 14 has input stage (input stage) 62 and output stage (output stage) 64, can use separate type assembly (discrete device) assembling to constitute.From Fig. 2, can learn; Except the drive signal SDRV as an input signal belonged to the 3.3V system, all signals in the level shifter 14 were no matter be that signal is gone in reference voltage or output; All be voltage source V IN power supply generation, and be independent of the voltage source V CC of 3.3V among Fig. 1 by 12V.Such benefit is: although power supply possibly also not be ready for for the voltage source V CC of drive signal SDRV; Just its voltage is not increased near 3.3V as yet; As long as voltage source V IN is stable; Level shifter 14 is also just stable thereupon, prepares to produce corresponding grid drive signal SGATE according to drive signal SDRV.
Input stage 62 is a grounded base amplifier (common-base amplifier).Input stage 62 comprises one as the two junction transistors of the PNP of input stage switch (bipolar-junction transistor, BJT) BF, its emitter-base bandgap grading reception drive signal SDRV.When voltage source V IN stablized, the voltage of contact N1 is set or provided to the strangulation voltage of Zener diode Z (clamping voltage), so also approximately determined the voltage of two junction transistor BF ground levels.The collection utmost point of two junction transistor BF, just contact NC sees through the voltage source V IN that resistance R 1 is couple to 12V.When drive signal SDRV is in a low logic level, such as during 0V, opens (turn on) and operate in state of saturation as two junction transistor BF of switch, so contact NC can for example be 0.2V at a very low voltage.When drive signal SDRV was in a high logic level, when for example being 3.3V, two junction transistor BF operated in closed condition, so contact NC is moved to a very high voltage by resistance R 1, and maybe be near the voltage 12V of voltage source V IN.Therefore, the signal on the contact NC has belonged to the 12V system that voltage source V IN is determined.
As shown in Figure 2, output stage 64 is the plug-type grade follower (push-pull emitter follower) of penetrating.The two junction transistor BT of NPN are connected with the base stage of the two junction transistor BB of PNP, as an input end, are connected to contact NC.Two junction transistor BT are connected with the emitter-base bandgap grading of two junction transistor BB, as an output terminal, and output grid drive signal SGATE.The collection utmost point of two junction transistor BT is couple to voltage source V IN; The collection utmost point of two junction transistor BT is couple to ground wire.The level of grid drive signal SGATE, will approximately follow (follow) contact NC level variation and change.So grid drive signal SGATE belongs to the 12V system.Output stage 64 can amplify from contact NC to come and the electric current of input, produces amplified current, by the emitter-base bandgap grading output of two junction transistor BT or two junction transistor BB.Therefore output stage 64 can be regarded as a current amplifier.
Can be known by inference by above analysis, when voltage source V IN was ready for, grid drive signal SGATE was consistent with the logic level meeting of drive signal SDRV.For instance, SDRV is in logic when drive signal " 0 " time, its magnitude of voltage is a low logic level (0V), the level of grid drive signal SGATE also can be at another low logic level (0V) in logic " 0 ".When drive signal SDRV is in a high logic level (3.3V), be in logic " 1 ", the level of grid drive signal SGATE also can be another high logic level (possibly be 11V) in logic " and 1 ".
Among one embodiment, one drive circuit only has an input stage and an output stage haply.Has only a driving component on each signal path in each grade.For example, the two junction transistor BF of driving component are only arranged on the signal path SP1 of the input stage 62 among Fig. 2, output stage 64 is having two signal path SPB and SPU, and two junction transistor BT are crossed in a meeting, and another can pass through two junction transistor BB.In another embodiment, one drive circuit can have at least one buffer stage, is arranged between an input stage and the output stage.Follow considering of component count cost based on reducing signal delay, it is reasonable that an input stage and an output stage are only arranged.
Even if voltage source V IN is also unstable; As long as the voltage of voltage source V IN surpasses the strangulation voltage (as a preset working voltage) of Zener diode Z; Zener diode Z will be approximately be stabilized in a fixed voltage with the ground level voltage of two junction transistor BF; Guarantee that two junction transistor BF operate in state of saturation at the very start, and make contact NC maintain a lower voltage.So in the power supply order process, contact NC will maintain a low voltage at the beginning always.This phenomenon can last till that voltage source V CC is ready for the level rising of rear drive signal SDRV, and the voltage of contact NC just possibly drawn high.
1. can in power supply order, not produce misoperation.The single voltage source V IN power supply of 14 needs of level shifter produces wherein any reference voltage or working point.As previously mentioned; As long as the voltage of voltage source V IN surpasses the strangulation voltage of Zener diode Z; Zener diode Z will be stabilized in a fixed voltage with the ground level voltage of two junction transistor BF; Guarantee that two junction transistor BF operate in state of saturation at the very start, and make contact NC maintain a lower voltage.If the 3.3V of voltage source V CC also is not ready for, the voltage of drive signal SDRV will be very near 0V.At this moment; If the 12V of voltage source V IN is ready for, the just normal work of level shifter 14, and the logic level of the grid drive signal SGATE that it produced can be the same with drive signal SDRV; A low-voltage just is approximately the low logic level of grid drive signal SGATE.Therefore, grid drive signal SGATE can not be in high logic level by error.
2. component count is few.As shown in Figure 2, only need three BJT, a Zener diode and several resistance.Just meaning person is low-cost less for component count.
3. operating speed is fast.Two junction transistor BF of input stage 62 are NPN, and its speed generally is higher than the two junction transistors of PNP.Output stage 64 also is the plug-type grade follower of penetrating of a high speed.So the operating speed of level shifter 14 can reach more than the 500kHz in theory.
Though the present invention is an example with the circuit of LCD screen, the present invention goes for other application.So long as will one belong to the low voltage system signal change into one belong to the drive signal of higher pressure system driving circuit, can use the present invention.
The above is merely preferred embodiment of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (12)
1. level shifter includes:
One grounded base amplifier has one first pair of junction transistor, and this first pair of junction transistor has a base stage and be coupled to one first predeterminated voltage, and an emitter-base bandgap grading receives an input signal, and a collection utmost point is coupled to one first voltage source; And
One current amplifier, by this first voltage fed, this current amplifier has this collection utmost point that an input end is coupled to this first pair of junction transistor, and an output terminal is in order to export a grid drive signal;
Wherein, this first predeterminated voltage is produced by this first voltage fed; And this input signal produces by one second voltage fed, and compared to this first voltage source, this second voltage source is a low-voltage source.
2. level shifter as claimed in claim 1; It is characterized in that; This current amplifier includes one first and penetrates a grade follower, has one second pair of junction transistor, and this second pair of junction transistor has a collection utmost point and be coupled to this first voltage source; One base stage is coupled to this collection utmost point of this first pair of junction transistor, and this grid drive signal of emitter-base bandgap grading output.
3. level shifter as claimed in claim 2 is characterized in that, this current amplifier includes:
One second penetrates a grade follower, has one the 3rd pair of junction transistor, and the 3rd pair of junction transistor has this collection utmost point that a base stage is couple to this first pair of junction transistor, and a collection utmost point is couple to a ground wire, and an emitter-base bandgap grading is in order to export this grid drive signal.
4. level shifter as claimed in claim 1; It is characterized in that when this input signal was positioned at a low logic level, this first pair of junction transistor operated in a state of saturation; When this input signal was positioned at a high logic level, this first pair of junction transistor operated in a closed condition.
5. level shifter as claimed in claim 1 is characterized in that, this grounded base amplifier includes a Zener diode, in order to this first predeterminated voltage to be provided.
6. level shifter includes:
One input stage has an input stage switch and supplies to receive an input signal, and this switch is optionally opened according to this input signal; And
One output stage is serially connected with this input stage, supplies output one grid drive signal; When this input stage switch is opened; This grid drive signal is in a low logic level, and when this input stage switch is closed, this grid drive signal is in a high logic level; Wherein, this input signal is consistent with the logic level of this grid drive signal.
7. level shifter as claimed in claim 6 is characterized in that, this input stage is a grounded base amplifier.
8. level shifter as claimed in claim 6; It is characterized in that; This input stage switch is one first pair of junction transistor, and when it was positioned at a low logic level when this input signal, this first pair of junction transistor operated in a state of saturation; When this input signal was positioned at a high logic level, this first pair of junction transistor operated in a closed condition.
9. level shifter as claimed in claim 6 is characterized in that, this output stage is to penetrate a grade follower.
10. level shifter as claimed in claim 6 is characterized in that, this output stage is a plug-type amplifier.
11. level shifter as claimed in claim 6 is characterized in that, each signal path in each this input stage and this output stage has only through a driving component.
12. level shifter as claimed in claim 6; It is characterized in that; This input stage has a Zener diode and a driving component, and when the voltage of this second voltage source was not increased to a preset WV as yet, this Zener diode guaranteed that this driving component works in a state of saturation.
13. a kind of booster driving circuit comprises:
One first voltage source;
One linear voltage decreasing device receives this first voltage source to produce one second voltage source, wherein, compares
In this first voltage source, this second voltage source is a low-voltage source;
One image converter receives this second voltage source, includes a grid pre-driver, and this grid pre-driver provides an input signal;
One level shifter is coupled to this grid pre-driver, includes:
One input stage receives this input signal;
One output stage is serially connected with this input stage, supplies output one grid drive signal;
This input stage and this output stage are accepted a plurality of fixed reference potential respectively, and these a plurality of fixed reference potential are produced by this first voltage fed;
This input signal is produced by this second voltage fed; And
When the voltage of this first voltage source was increased to a preset WV, this input signal was consistent with the logic level of this grid drive signal; And
One boost converter includes a power switch, and this power switch is coupled to this level shifter, in order to receive this grid drive signal and to export a driving voltage.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110168399.0A CN102820010B (en) | 2011-06-10 | 2011-06-10 | Electrical level shifter and voltage-boosting drive circuit |
| CN201310676358.1A CN103646635B (en) | 2011-06-10 | 2011-06-10 | Level shifter and booster driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110168399.0A CN102820010B (en) | 2011-06-10 | 2011-06-10 | Electrical level shifter and voltage-boosting drive circuit |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310676358.1A Division CN103646635B (en) | 2011-06-10 | 2011-06-10 | Level shifter and booster driving circuit |
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| CN102820010A true CN102820010A (en) | 2012-12-12 |
| CN102820010B CN102820010B (en) | 2014-09-03 |
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| CN201310676358.1A Active CN103646635B (en) | 2011-06-10 | 2011-06-10 | Level shifter and booster driving circuit |
| CN201110168399.0A Active CN102820010B (en) | 2011-06-10 | 2011-06-10 | Electrical level shifter and voltage-boosting drive circuit |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310676358.1A Active CN103646635B (en) | 2011-06-10 | 2011-06-10 | Level shifter and booster driving circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106023941B (en) * | 2016-07-29 | 2018-05-01 | 京东方科技集团股份有限公司 | Level shifter and its driving method, gate driving circuit and display device |
| CN106125814B (en) * | 2016-08-17 | 2017-11-17 | 珠海格力节能环保制冷技术研究中心有限公司 | Signaling conversion circuit, control circuit and DC brushless motor |
| CN107707245B (en) * | 2017-09-25 | 2020-11-27 | 京东方科技集团股份有限公司 | Level shift circuit, display device driving circuit, and display device |
| US10795392B1 (en) * | 2019-04-16 | 2020-10-06 | Novatek Microelectronics Corp. | Output stage circuit and related voltage regulator |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1674441A (en) * | 2004-03-23 | 2005-09-28 | 联咏科技股份有限公司 | Source electrode drive circuit, latch voltage bit quasi converter and high voltage positive and negative device |
| US20100156371A1 (en) * | 2008-12-24 | 2010-06-24 | Postech Academy-Industry Foundation | Single supply pass gate level converter for multiple supply voltage system |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4409453A1 (en) * | 1994-03-18 | 1995-09-21 | Thomson Brandt Gmbh | BiCMOS level converter ECL-CMOS |
| JP4147480B2 (en) * | 2003-07-07 | 2008-09-10 | ソニー株式会社 | Data transfer circuit and flat display device |
| KR101064186B1 (en) * | 2005-08-10 | 2011-09-14 | 삼성전자주식회사 | Level shifter, and display device having the same |
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2011
- 2011-06-10 CN CN201310676358.1A patent/CN103646635B/en active Active
- 2011-06-10 CN CN201110168399.0A patent/CN102820010B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674441A (en) * | 2004-03-23 | 2005-09-28 | 联咏科技股份有限公司 | Source electrode drive circuit, latch voltage bit quasi converter and high voltage positive and negative device |
| US20100156371A1 (en) * | 2008-12-24 | 2010-06-24 | Postech Academy-Industry Foundation | Single supply pass gate level converter for multiple supply voltage system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103646635A (en) | 2014-03-19 |
| CN102820010B (en) | 2014-09-03 |
| CN103646635B (en) | 2016-04-06 |
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Effective date of registration: 20201027 Address after: No. 1, Xingzhu Road, Hsinchu Science Park, Taiwan, China Patentee after: MEDIATEK Inc. Address before: 518057, Guangdong, Shenzhen hi tech Zone, South District, science and technology, South ten road, Shenzhen Institute of Aerospace Science and technology innovation, C block, building 4 Patentee before: Mstar Semiconductor,Inc. Patentee before: MEDIATEK Inc. Effective date of registration: 20201027 Address after: 4 / F, block C, Shenzhen Aerospace Science and Technology Innovation Research Institute, science and technology south 10th Road, South District, Shenzhen high tech Zone, Guangdong Province Patentee after: Mstar Semiconductor,Inc. Patentee after: MEDIATEK Inc. Address before: 518057, Guangdong, Shenzhen hi tech Zone, South District, science and technology, South ten road, Shenzhen Institute of Aerospace Science and technology innovation, C block, building 4 Patentee before: Mstar Semiconductor,Inc. Patentee before: MSTAR SEMICONDUCTOR Inc. |