CN102811548A - Circuit structure and making method thereof - Google Patents
Circuit structure and making method thereof Download PDFInfo
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- CN102811548A CN102811548A CN2011101453113A CN201110145311A CN102811548A CN 102811548 A CN102811548 A CN 102811548A CN 2011101453113 A CN2011101453113 A CN 2011101453113A CN 201110145311 A CN201110145311 A CN 201110145311A CN 102811548 A CN102811548 A CN 102811548A
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- type photoresist
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Abstract
The invention provides a circuit structure and a making method thereof. The circuit structure comprises a substrate, a first electroconductive layer arranged on the substrate, an insulating layer arranged on the first electroconductive layer and covering the substrate, a negative photoresist laye arranged on the insulating layer, a compensation layer covering the negative photoresist layer and filled in a grove, and a second electroconductive layer, wherein the negative photoresist layer is provided with a side wall which is provided with a groove adjacent to the insulating layer, and the second electroconductive layer is arranged on the compensation layer and extends to the insulating layer. According to the invention, the process yield can be improved, process steps can be simplified effectively, and the making cost is reduced.
Description
Technical field
The present invention is relevant for electronic component, particularly relevant for line construction and preparation method thereof.
Background technology
Flourish along with electronic industry, electronic product also progresses into multi-functional, high performance R&D direction.The technology that directly forms various passive components (for example resistance, electric capacity, inductance) in the circuit board for reducing the volume of electronic product, having developed, passive component is disposed technology in the circuit board in addition to replace tradition with the mode of designed lines layout.
Summary of the invention
The present invention provides a kind of line construction, comprises a substrate; One first conductive layer is disposed on the substrate; One insulating barrier is disposed on first conductive layer and covered substrate; One negative type photoresist layer is disposed on the insulating barrier, and has a sidewall, and sidewall has the groove of a contiguous insulating barrier; One layer of compensation covers the negative type photoresist layer, and inserts in the groove; And one second conductive layer, be disposed on the layer of compensation and extend on the insulating barrier.
Line construction of the present invention, this layer of compensation are a positive light anti-etching agent layer.
Line construction of the present invention, this layer of compensation has a side portion, and this side portion covers this sidewall of this negative type photoresist layer, and this side portion is towards a direction convergent away from this insulating barrier.
Line construction of the present invention, this layer of compensation have the side portion of this sidewall of this negative type photoresist layer of covering, and the roughness of this sidewall of this negative type photoresist layer is greater than the roughness on the surface of this side portion.
Line construction of the present invention, the surface of this side portion are a smooth curved surface or a smooth plane.
Line construction of the present invention, the portion of inserting that inserts in this groove of this layer of compensation is positioned between this negative type photoresist layer and this insulating barrier.
Line construction of the present invention, this portion of inserting directly contacts this insulating barrier.
The present invention provides a kind of manufacture method of line construction, is included in and forms one first conductive layer on the substrate; On first conductive layer, form an insulating barrier, and the insulating barrier covered substrate; On insulating barrier, form a negative type photoresist layer, the negative type photoresist layer has a sidewall, and sidewall has the groove of a contiguous insulating barrier; Form the layer of compensation of a covering negative type photoresist layer, and layer of compensation is inserted in the groove; And on layer of compensation, form one second conductive layer, and second conductive layer extends on the insulating barrier.
The manufacture method of line construction of the present invention, the formation step of this negative type photoresist layer comprises: on this insulating barrier, form a negative type photoresist material layer; And this negative type photoresist material layer carried out a lithographic process, with this negative type photoresist material layer of patterning.
The manufacture method of line construction of the present invention, the material of this layer of compensation comprises the positive light anti-etching agent material.
The manufacture method of line construction of the present invention, the formation step of this layer of compensation comprises: on this insulating barrier, form a liquid positive light anti-etching agent material, and positive light anti-etching agent material that should liquid state is inserted in this groove; This liquid positive light anti-etching agent material is carried out a baking processing procedure, forming a positive light anti-etching agent material layer, and this negative type photoresist layer of this positive light anti-etching agent layer of material covers; And this positive light anti-etching agent material layer carried out a lithographic process, to remove the part that does not cover this negative type photoresist layer of this positive light anti-etching agent material layer.
The manufacture method of line construction of the present invention; This negative type photoresist layer and this layer of compensation make with one first exposure imaging processing procedure and one second exposure imaging processing procedure respectively, and the mask pattern of this first exposure imaging processing procedure and this second exposure imaging processing procedure is complementary haply.
The manufacture method of line construction of the present invention, the formation method of this second conductive layer comprises sputter.
The manufacture method of line construction of the present invention, this layer of compensation has a side portion, and this side portion covers this sidewall of this negative type photoresist layer, and this side portion is towards a direction convergent away from this insulating barrier.
The manufacture method of line construction of the present invention, this layer of compensation have the side portion of this sidewall of this negative type photoresist layer of covering, and the roughness of this sidewall of this negative type photoresist layer is greater than the roughness on the surface of this side portion.
The manufacture method of line construction of the present invention, the portion of inserting that inserts in this groove of this layer of compensation is positioned between this negative type photoresist layer and this insulating barrier.
The present invention can promote process rate, and can effectively simplify fabrication steps, reduces cost of manufacture.
Description of drawings
Figure 1A to Figure 1B illustrates the profile of the processing procedure of a kind of line construction that the applicant knows.
Fig. 2 A to Fig. 2 F illustrates the processing procedure profile of the line construction of one embodiment of the invention.
Fig. 3 illustrates the profile of the line construction of one embodiment of the invention.
The simple declaration of symbol is following in the accompanying drawing:
110: circuit base plate; 120: patterning negative type photoresist material layer; 122,242: sidewall; 124,244: groove; 130: line layer; 210: substrate; 220,260: conductive layer; 230: insulating barrier; 240a: negative type photoresist material layer; 240: the negative type photoresist layer; 250a: positive light anti-etching agent material layer; 250: layer of compensation; 252: insert portion; 254: side portion; 254a: surface; A: direction; C: capacity cell; I: interface; M1: first light shield; M2: second light shield; T: thickness.
Embodiment
Below will specify the making and the occupation mode of the embodiment of the invention.It should be noted that so the present invention provides many inventive concepts of supplying usefulness, it can multiple particular form be implemented.The specific embodiment of discussing of giving an example in the literary composition is merely manufacturing and uses ad hoc fashion of the present invention, and is non-in order to limit scope of the present invention.In addition, in different embodiment, possibly use the label or the sign of repetition.These repeat to be merely simply clearly narrates the present invention, does not represent between the different embodiment that discussed and/or the structure to have any association.Moreover, when address that one first material layer is positioned on one second material layer or on the time, comprise that first material layer directly contacts with second material layer or be separated with one or the situation of more other materials layers.
One embodiment of the invention provides a kind of line construction and processing procedure thereof, and this line construction can be used in the wafer encapsulation body.In the embodiment of wafer encapsulation body of the present invention; It can be applicable to the various electronic components (electronic components) that comprise active element or passive component (active or passive elements), digital circuit or analog circuit integrated circuits such as (digital or analog circuits), for example relates to photoelectric cell (opto electronic devices), MEMS (Micro Electro Mechanical System; MEMS), physical quantitys such as microfluid system (micro fluidic systems) or utilization heat, light and pressure change the physics sensor of measuring (Physical Sensor).Particularly can select to use wafer-level packaging (wafer scale package; WSP) processing procedure is to Image Sensor, light-emitting diode (light-emitting diodes; LEDs), solar cell (solar cells), RF component (RF circuits), accelerometer (accelerators), gyroscope (gyroscopes), little brake (micro actuators), surface acoustic wave element (surface acoustic wave devices), pressure sensor (process sensors), ink gun (ink printer heads) or power wafer semiconductor wafers such as (power IC) encapsulate.
Wherein above-mentioned wafer-level packaging processing procedure mainly is meant after wafer stage is accomplished encapsulation step; Cut into independently packaging body again; Yet in a specific embodiment, the semiconductor wafer redistribution that for example will separate is carried on the wafer one; Carry out encapsulation procedure again, also can be referred to as the wafer-level packaging processing procedure.In addition, above-mentioned wafer-level packaging processing procedure also is applicable to borrow and piles up the multi-disc wafer that (stack) mode arrangement has integrated circuit, to form the wafer encapsulation body of multilevel integration (multi-layer integrated circuit devices).
Figure 1A to Figure 1B illustrates the profile of the processing procedure of a kind of line construction that the applicant knows.Please, on a circuit base plate 110, form a negative type photoresist material layer (not illustrating) comprehensively, and the negative type photoresist material layer is carried out an exposure imaging processing procedure, to form a patterning negative type photoresist material layer 120 with reference to Figure 1A.
It should be noted that the negative type photoresist material has the characteristic that can produce cross-linking reaction after the irradiation and harden, therefore, the mode of the irradiation capable of using photoresist pattern that institute's desire forms that hardens, and remove the part that does not shine light through developing manufacture process.
Yet; In the process of optical exposure; Owing to the energy that the part of irradiation adjacent lines substrate 110 partly is received is less, therefore, there is the incomplete situation of sclerosis to produce easily; So that after developing manufacture process, the part of the adjacent lines substrate 110 of formed patterning negative type photoresist material layer 120 is prone to crossed development and on sidewall 122, produces the groove 124 of for example undercutting (undercut).
Afterwards, please with reference to Figure 1B, deposition one line layer 130 on patterning negative type photoresist material layer 120.Owing to be formed with groove 124 on the sidewall 122, therefore, the line layer 130 that is deposited on the sidewall 122 breaks off near groove 124 easily, and causes process rate on the low side.
Fig. 2 A to Fig. 2 F illustrates the processing procedure profile of the line construction of one embodiment of the invention.Please, on a substrate 210, form a conductive layer 220 with reference to Fig. 2 A.Substrate 210 can be semiconductor substrate (for example silicon substrate) or printed circuit board (PCB).Conductive layer 220 can be a capacitance electrode or a line layer, and its material can be metal (for example aluminium) or other electric conducting materials that is fit to.Then, can on conductive layer 220, form an insulating barrier 230, and insulating barrier 230 covered substrates 210.The material of insulating barrier 230 for example is an oxide (like silicon dioxide), and the formation method of insulating barrier 230 for example is a chemical vapour deposition technique.
Then; Please with reference to Fig. 2 B; In one embodiment; Can on insulating barrier 230, form a negative type photoresist material layer 240a, the mode that wherein forms negative type photoresist material layer 240a comprises coating, like dip coated (dip coating), roller coating (roller coating) or rotary coating (spin coating).The material of negative type photoresist material layer 240a can be the negative type photoresist material of various commercialization.Then, utilize 1 pair of negative type photoresist material layer of one first light shield M 240a to carry out an exposure manufacture process, to solidify the negative type photoresist material layer 240a of irradiation part.
Afterwards; Please with reference to Fig. 2 C; Carry out a developing manufacture process,, and form a negative type photoresist layer 240 with the part of the not irradiation that removes negative type photoresist material layer 240a; Wherein negative type photoresist layer 240 has a sidewall 242, and sidewall 242 has the groove 244 of a contiguous insulating barrier 230.Fig. 2 C is that the groove that illustrates undercutting is that example is explained, but is not limited thereto.
Then, please with reference to Fig. 2 E, form one and cover the layer of compensation 250 of negative type photoresist layer 240, and layer of compensation 250 is inserted in the groove 244.Because layer of compensation 250 has multiple formation method, therefore, below specially lift wherein a kind of formation method and elaborate, but be not in order to limit the present invention.
At first, please with reference to Fig. 2 D, on insulating barrier 230, form the positive light anti-etching agent material (not illustrating) of a liquid state, and liquid positive light anti-etching agent material is inserted in the groove 244.The method that forms liquid positive light anti-etching agent material for example is method of spin coating, infusion process, spraying process.
Then, the positive light anti-etching agent material of liquid towards carries out a baking processing procedure (soft roasting, soft-bake), forming a positive light anti-etching agent material layer 250a, and positive light anti-etching agent material layer 250a covers negative type photoresist layer 240.The material of positive light anti-etching agent material layer 250a can be the positive light anti-etching agent material of various commercialization.
Afterwards; Via one second light shield M2 eurymeric photo anti-corrosion agent material layer 250a carried out an exposure manufacture process; Wherein the mask pattern of the second light shield M2 is on the whole similar in appearance to the pattern of negative type photoresist layer 240; And in exposure manufacture process, the second light shield M2 covers the positive light anti-etching agent material layer 250a that is positioned on the negative type photoresist layer 240.
Then,, carry out a developing manufacture process, with the part that does not cover negative type photoresist layer 240 (the irradiation portion of positive light anti-etching agent material layer 250a just) that removes positive light anti-etching agent material layer 250a please with reference to Fig. 2 E.
It should be noted that; Present embodiment is as the layer of compensation 250 that covers negative type photoresist layer 240 with the positive light anti-etching agent material; Because the reaction of positive light anti-etching agent material and negative type photoresist materials control light opposite (positive light anti-etching agent material be dissociate after the irradiation, the negative type photoresist material is that irradiation is afterwards crosslinked); Therefore, in order to of the mask pattern haply complementation of formation negative type photoresist layer 240 with the first light shield M1 and the second light shield M2 of layer of compensation 250.
In addition, when adopting the positive light anti-etching agent material by way of compensation during layer 250, only need carry out lithographic process and can form layer of compensation 250, and need not to carry out in addition an etch process, so can effectively simplify fabrication steps and reduce cost of manufacture.
In addition, in other embodiments, the material of layer of compensation 250 can be the insulating material of other non-positive light anti-etching agent materials; For example macromolecular material, and its manufacture method can be earlier this macromolecular material is formed on the insulating barrier 230, to form a polymer material layer; Afterwards, on this polymer material layer, form the photoresist layer, and this photoresist layer of patterning; Then, be etch mask with this patterning photoresist layer, this polymer material layer of etching; Afterwards, remove this patterning photoresist layer.
Then, please with reference to Fig. 2 F, on layer of compensation 250, form a conductive layer 260, and conductive layer 260 extends on the insulating barrier 230.Conductive layer 260 can be a capacitance electrode or a line layer.The material of conductive layer 260 for example is metal, for example aluminium.The formation method of conductive layer 260 for example is sputter or other metal-plated processing procedures that is fit to.
Below will introduce the line construction 200 of Fig. 2 F to the part of structure in detail.
Please with reference to Fig. 2 F, the line construction 200 of present embodiment comprises a substrate 210, a conductive layer 220, an insulating barrier 230, a negative type photoresist layer 240, a layer of compensation 250 and a conductive layer 260.
Layer of compensation 250 covers negative type photoresist layer 240; And insert in the groove 244; Wherein the material of layer of compensation 250 for example is suitable for filling up the insulating material of the groove 244 of negative type photoresist layer 240, for example macromolecular material for positive light anti-etching agent material or other.Conductive layer 260 is disposed on the layer of compensation 250 and extends on the insulating barrier 230.
In one embodiment; Groove 244 is positioned at the interface I of negative type photoresist layer 240 and insulating barrier 230; And one in the groove 244 of inserting of layer of compensation 250 inserted portion 252 between negative type photoresist layer 240 and insulating barrier 230, at this moment, inserts portion's 252 direct contact insulation layers 230.
At this, only in order to illustrate, the position of groove 244 can be formed on different positions according to the difference of process conditions in the position of groove 244.Fig. 3 illustrates the profile of line construction of the groove with non-undercutting of another embodiment of the present invention.For instance, as shown in Figure 3, groove 244 also can be formed on the part near insulating barrier 230 of negative type photoresist layer 240, and is separated with a spacing with insulating barrier 230.
Please once more with reference to Fig. 2 F, in one embodiment, layer of compensation 250 has a side portion 254, and side portion 254 covers the sidewall 242 of negative type photoresist layer 240, and side portion 254 is towards a direction A convergent away from insulating barrier 230.Particularly, the thickness T of the covering sidewall 242 of side portion 254 is towards reducing away from the direction A of insulating barrier 230, and presents wide and the shape that the upper end is narrow in a kind of bottom.
It should be noted that layer of compensation of the present invention still can improve the uniformity of line layer except avoiding line layer opens circuit.In one embodiment, the roughness of the sidewall 242 of negative type photoresist layer 240 is greater than the roughness of the surperficial 254a of side portion 254, and the surperficial 254a of side portion 254 for example is a smooth curved surface (for example convex surface) or a smooth plane.It should be noted that the coarse sidewall 242 that can cover negative type photoresist layer 240 owing to layer of compensation 250 forms smooth surperficial 254a, therefore, can effectively promote the process rate that is formed at the line layer on the surperficial 254a.
In one embodiment, negative type photoresist layer 240 and layer of compensation 250 are between conductive layer 220 and conductive layer 260, to form the capacity cell C that is made up of conductive layer 220, conductive layer 260, negative type photoresist layer 240 and layer of compensation 250.
In sum, the present invention is through covering a layer of compensation on the negative type photoresist that has groove on the sidewall, filling and leading up groove, and helps to promote the process rate of follow-up conductive layer.Moreover the present invention can adopt positive light anti-etching agent material layer by way of compensation, thus, only need carry out lithographic process and can form layer of compensation, can effectively simplify fabrication steps and reduce cost of manufacture.
The above is merely preferred embodiment of the present invention; So it is not in order to limit scope of the present invention; Any personnel that are familiar with this technology; Do not breaking away from the spirit and scope of the present invention, can do further improvement and variation on this basis, so the scope that claims were defined that protection scope of the present invention is worked as with the application is as the criterion.
Claims (16)
1. a line construction is characterized in that, comprising:
One substrate;
One first conductive layer is disposed on this substrate;
One insulating barrier is disposed on this first conductive layer and covers this substrate;
One negative type photoresist layer is disposed on this insulating barrier, and has a sidewall, and this sidewall has the groove of contiguous this insulating barrier;
One layer of compensation covers this negative type photoresist layer, and inserts in this groove; And
One second conductive layer is disposed on this layer of compensation and extends on this insulating barrier.
2. line construction according to claim 1 is characterized in that, this layer of compensation is a positive light anti-etching agent layer.
3. line construction according to claim 1 is characterized in that this layer of compensation has a side portion, and this side portion covers this sidewall of this negative type photoresist layer, and this side portion is towards a direction convergent away from this insulating barrier.
4. line construction according to claim 1 is characterized in that, this layer of compensation has the side portion of this sidewall of this negative type photoresist layer of covering, and the roughness of this sidewall of this negative type photoresist layer is greater than the roughness on the surface of this side portion.
5. line construction according to claim 4 is characterized in that, the surface of this side portion is a smooth curved surface or a smooth plane.
6. line construction according to claim 1 is characterized in that, the portion of inserting that inserts in this groove of this layer of compensation is positioned between this negative type photoresist layer and this insulating barrier.
7. line construction according to claim 6 is characterized in that this portion of inserting directly contacts this insulating barrier.
8. the manufacture method of a line construction is characterized in that, comprising:
On a substrate, form one first conductive layer;
On this first conductive layer, form an insulating barrier, and this insulating barrier covers this substrate;
On this insulating barrier, form a negative type photoresist layer, this negative type photoresist layer has a sidewall, and this sidewall has the groove of contiguous this insulating barrier;
Form the layer of compensation of this negative type photoresist layer of covering, and this layer of compensation is inserted in this groove; And
On this layer of compensation, form one second conductive layer, and this second conductive layer extends on this insulating barrier.
9. the manufacture method of line construction according to claim 8 is characterized in that, the formation step of this negative type photoresist layer comprises:
On this insulating barrier, form a negative type photoresist material layer; And
This negative type photoresist material layer is carried out a lithographic process, with this negative type photoresist material layer of patterning.
10. the manufacture method of line construction according to claim 8 is characterized in that, the material of this layer of compensation comprises the positive light anti-etching agent material.
11. the manufacture method of line construction according to claim 10 is characterized in that, the formation step of this layer of compensation comprises:
On this insulating barrier, form a liquid positive light anti-etching agent material, and positive light anti-etching agent material that should liquid state is inserted in this groove;
This liquid positive light anti-etching agent material is carried out a baking processing procedure, forming a positive light anti-etching agent material layer, and this negative type photoresist layer of this positive light anti-etching agent layer of material covers; And
This positive light anti-etching agent material layer is carried out a lithographic process, to remove the part that does not cover this negative type photoresist layer of this positive light anti-etching agent material layer.
12. the manufacture method of line construction according to claim 10; It is characterized in that; This negative type photoresist layer and this layer of compensation make with one first exposure imaging processing procedure and one second exposure imaging processing procedure respectively, and the mask pattern of this first exposure imaging processing procedure and this second exposure imaging processing procedure is complementary haply.
13. the manufacture method of line construction according to claim 8 is characterized in that, the formation method of this second conductive layer comprises sputter.
14. the manufacture method of line construction according to claim 8 is characterized in that, this layer of compensation has a side portion, and this side portion covers this sidewall of this negative type photoresist layer, and this side portion is towards a direction convergent away from this insulating barrier.
15. the manufacture method of line construction according to claim 8; It is characterized in that; This layer of compensation has the side portion of this sidewall of this negative type photoresist layer of covering, and the roughness of this sidewall of this negative type photoresist layer is greater than the roughness on the surface of this side portion.
16. the manufacture method of line construction according to claim 8 is characterized in that, the portion of inserting that inserts in this groove of this layer of compensation is positioned between this negative type photoresist layer and this insulating barrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110145311.3A CN102811548B (en) | 2011-05-31 | 2011-05-31 | Circuit structure and making method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110145311.3A CN102811548B (en) | 2011-05-31 | 2011-05-31 | Circuit structure and making method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102811548A true CN102811548A (en) | 2012-12-05 |
| CN102811548B CN102811548B (en) | 2015-06-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110145311.3A Expired - Fee Related CN102811548B (en) | 2011-05-31 | 2011-05-31 | Circuit structure and making method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102811548B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4145460A (en) * | 1977-06-27 | 1979-03-20 | Western Electric Company, Inc. | Method of fabricating a printed circuit board with etched through holes |
| JPH0748518B2 (en) * | 1987-07-15 | 1995-05-24 | 日本電気株式会社 | Method for manufacturing semiconductor device |
-
2011
- 2011-05-31 CN CN201110145311.3A patent/CN102811548B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4145460A (en) * | 1977-06-27 | 1979-03-20 | Western Electric Company, Inc. | Method of fabricating a printed circuit board with etched through holes |
| JPH0748518B2 (en) * | 1987-07-15 | 1995-05-24 | 日本電気株式会社 | Method for manufacturing semiconductor device |
Non-Patent Citations (1)
| Title |
|---|
| 王占国,等: "《中国材料工程大典》", 31 March 2006, article "《负性抗蚀剂工艺》", pages: 587 * |
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| CN102811548B (en) | 2015-06-17 |
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