CN102809896B - Mask and photolithography method thereof - Google Patents
Mask and photolithography method thereof Download PDFInfo
- Publication number
- CN102809896B CN102809896B CN201110142385.1A CN201110142385A CN102809896B CN 102809896 B CN102809896 B CN 102809896B CN 201110142385 A CN201110142385 A CN 201110142385A CN 102809896 B CN102809896 B CN 102809896B
- Authority
- CN
- China
- Prior art keywords
- mask plate
- ion
- light
- hydrophilic coating
- permeable hydrophilic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention discloses a mask, wherein the upper surface of the mask is coated with a light-permeable hydrophilic coating, the light-permeable hydrophilic coating is used for preventing ions inside the mask and ions in air from combination into a crystal, and is adsorbed with a water film, and the water film is used for dissolving the ions in the air and the ions inside the mask. The present invention further discloses a photolithography method. With the mask and the photolithography method in the present invention, precision of photolithography patterns can be improved.
Description
Technical field
The present invention relates to semiconductor technology, particularly a kind of mask plate and photoetching method thereof.
Background technology
Along with the development of semiconductor fabrication process, the area of semi-conductor chip is more and more less, so the precision of semiconductor technology also becomes more important.In semiconductor fabrication process, one of them important technique is exactly photoetching, and photoetching is by the design transfer on mask plate, to be the technological process of the photoengraving pattern on wafer.
The method of photoetching is roughly as follows:
First, apply photoresist (PR) on wafer, the method for coating can be spin coating.
Then, apply mask plate being coated with on the wafer of PR.
Finally, expose, develop, thereby form photoengraving pattern on wafer.
Visible, the precision of reticle pattern has directly determined the precision of photoengraving pattern, if reticle pattern precision is affected, directly affect the precision of photoengraving pattern, yet, can there is the phenomenon of crystallize out in mask plate of the prior art surface, the crystal of separating out has affected reticle pattern precision, has further affected the precision of photoengraving pattern.
Below, to separating out the principle of above-mentioned crystal, be introduced: mask plate, also referred to as light shield (mask), it typically is glass quality, when glass is in manufacturing process, its inside may mix some negative ions, and negative ion is mainly acid ion, for example sulfate ion (SO
4 2-), and, owing to cleaning mask plate, can use acid solution, when cleaning in the process of mask plate, also a small amount of negative ion can be sneaked into inside glass, negative ion is mainly acid ion, for example sulfate ion (SO
4 2-).And in air, likely there is positive ion, that common is amine radical ion (NH
4 +).When mask plate time exposure is in short wavelength light lower time, under the effect of short wavelength light, the negative ion in mask plate and the airborne positive ion generation crystal that combines, and separate out the surface in mask plate.
According to the difference of positive and negative ion kind, common crystal is such as being: ammonium sulfate, phosphamide, oxamide etc.These crystal are attached to the surface of mask plate after separating out, affected the precision of reticle pattern, have also affected the precision of photoengraving pattern.
In the prior art, in order to reduce separating out of crystal as far as possible, two kinds of methods below main employing:
First method, avoids using acid solution to clean mask plate, and adopts liquid ozone to clean mask plate.Like this, can avoid acid ion to sneak into mask plate inside, thereby avoid the generation of crystal.
Second method, can adopt filtrator to filter air, for example, filter out airborne amine radical ion, like this, also can avoid the generation of crystal.
Yet, above-mentioned two kinds of methods all cannot be stopped separating out of crystal effectively, although first method can avoid negative ion to sneak into mask plate inside in cleaning process, but glass is in manufacturing process, its inside also likely mixes and has negative ion itself, second method can only filter out a small amount of several ion, airborne all positive ions all can not be filtered out.Visible, the crystal that these two kinds of methods of the prior art all can not be stopped mask plate surface is effectively separated out, and the crystal of separating out still can reduce the precision of reticle pattern, has finally reduced the precision of photoengraving pattern.
Summary of the invention
In view of this, the invention provides a kind of mask plate, can improve the precision of photoengraving pattern.
The present invention also provides a kind of photoetching method, can improve the precision of photoengraving pattern.
For solving the problems of the technologies described above, technical scheme of the present invention is achieved in that
A mask plate, the upper surface of described mask plate is coated with light-permeable hydrophilic coating, and described light-permeable hydrophilic coating becomes crystal for the ion of block mask version inside with airborne ions binding; On described light-permeable hydrophilic coating, also absorption has moisture film, for dissolving the ion of described airborne ion and described mask plate inside.
The lower surface of described mask plate is further coated with light-permeable hydrophilic coating.
Described light-permeable hydrophilic coating is coating of titanium dioxide.
Described airborne ion is positive ion; The ion of described mask plate inside is negative ion.
Described positive ion is amine radical ion; Described negative ion is sulfate ion.
A photoetching method, the method comprises:
One mask plate is provided, upper surface at mask plate applies light-permeable hydrophilic coating, described light-permeable hydrophilic coating becomes crystal for the ion of block mask version inside with airborne ions binding, on described light-permeable hydrophilic coating, also absorption has moisture film, for dissolving the ion of described airborne ion and described mask plate inside;
On wafer, apply photoresist PR.
Be coated with the mask plate of light-permeable hydrophilic coating being coated with described in applying on the wafer of PR, and expose, develop.
The method further comprises: the lower surface at described mask plate applies light-permeable hydrophilic coating.
Described light-permeable hydrophilic coating is coating of titanium dioxide.
Described airborne ion is positive ion; The ion of described mask plate inside is negative ion.
Described positive ion is amine radical ion; Described negative ion is sulfate ion.
Based on mask plate provided by the present invention and photoetching method, first the upper surface at mask plate applies light-permeable hydrophilic coating, then on wafer, apply PR, finally on the wafer of PR, apply the mask plate that is coated with light-permeable hydrophilic coating being coated with, and expose, develop, visible, the present invention has increased light-permeable hydrophilic coating on the surface of mask plate, light-permeable hydrophilic coating is the diaphragm with barrier effect, it can be isolated the surface of mask plate, the negative ion that prevents mask plate inside contacts with air, therefore the negative ion that has stopped mask plate inside is combined with airborne positive ion and is generated crystal, and, because light-permeable hydrophilic coating has water wettability, on light-permeable hydrophilic coating, also absorption has water membrane, even if the negative ion of mask plate inside oozes out the surface of mask plate, moisture film can dissolve negative ion and the airborne positive ion of mask plate inside, also can avoid at mask plate Surface Creation crystal, therefore, improved the precision of reticle pattern, finally improved the precision of photoengraving pattern.
Further, also can be further at the lower surface of mask plate, apply light-permeable hydrophilic coating, further to improve the precision of photoengraving pattern.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of a kind of mask plate provided by the present invention.
Fig. 2 is the process flow diagram of the embodiment of a kind of photoetching method provided by the present invention.
Embodiment
For making object of the present invention, technical scheme and advantage clearer, referring to the accompanying drawing embodiment that develops simultaneously, scheme of the present invention is described in further detail.
Core concept of the present invention is: the surface at mask plate increases light-permeable hydrophilic coating, light-permeable hydrophilic coating is the diaphragm with barrier effect, it can be isolated the surface of mask plate, the negative ion that prevents mask plate inside contacts with air, and the negative ion that has therefore stopped mask plate inside is combined with airborne positive ion and is generated crystal; In addition, because light-permeable hydrophilic coating has water wettability, on light-permeable hydrophilic coating, also absorption has water membrane, even if the negative ion of mask plate inside oozes out the surface of mask plate, moisture film can dissolve negative ion and the airborne positive ion of mask plate inside, therefore also can avoid at mask plate Surface Creation crystal.
Fig. 1 is the structural representation of the embodiment of a kind of mask plate provided by the present invention, and as shown in Figure 1, the upper surface of mask plate 101 is coated with light-permeable hydrophilic coating 102.
Because light-permeable hydrophilic coating 102 is for to have light-permeable and hydrophilic material, therefore, after the upper surface at mask plate 101 applies light-permeable hydrophilic coating 102, on light-permeable hydrophilic coating 102, also absorption has moisture film 103.
It should be noted that, Fig. 1 only be take the upper surface of mask plate 101 and is coated with light-permeable hydrophilic coating 102 as example.In actual mechanical process, when very high to the accuracy requirement of photoengraving pattern, can be coated with light-permeable hydrophilic coating 102 on the upper and lower surface of mask plate, when not very high to the accuracy requirement of photoengraving pattern, also can be only at the upper surface of mask plate, be coated with light-permeable hydrophilic coating 102.
In practical application, mask plate 101 also may comprise other structures, because other structures are unrelated to the invention, therefore introduce in detail no longer one by one.
Based on above-mentioned mask plate, below in conjunction with Fig. 1, a kind of photoetching method provided by the present invention is described in detail, the process flow diagram of the embodiment that Fig. 2 is a kind of photoetching method provided by the present invention, as shown in Figure 2, the method comprises:
Step 201, provides a mask plate, at the upper surface coating light-permeable hydrophilic coating of mask plate.
In addition, when very high to the accuracy requirement of photoengraving pattern, also can be further at the lower surface of mask plate, apply light-permeable hydrophilic coating.
Light-permeable hydrophilic coating in the embodiment of the present invention refers to the coating consisting of light-permeable and hydrophilic material, and for example, light-permeable hydrophilic coating can be titania (TiO
2) coating.TiO
2the preparation method of coating can, with reference to corresponding contents of the prior art, now provide place's document only for reference:
http://wenku.baidu.com/view/bcec9205cc17552707220816.html。
In an embodiment of the present invention, why on the surface of mask plate, apply light-permeable hydrophilic coating, mainly contain following 2 reasons:
First; light-permeable hydrophilic coating is the diaphragm with barrier effect; it can be isolated the surface of mask plate, prevents that the negative ion of mask plate inside from contacting with air, and the negative ion that has therefore stopped mask plate inside is combined with airborne positive ion and is generated crystal.
For example, even under the effect of short wavelength light, TiO
2sulfate ion (the SO of coating in still can block mask version
4 2-) and airborne amine radical ion (NH
4 +) combination.
The second, owing to also adsorbing and have water membrane in the surface of light-permeable hydrophilic coating, and that the airborne positive ion that is generally used for producing above-mentioned crystal has is water-soluble, and therefore, moisture film can be dissolved in airborne positive ion wherein.In addition, even if the negative ion of mask plate inside oozes out the surface of mask plate, the negative ion that is generally used for producing the mask plate inside of above-mentioned crystal also has water-soluble, and therefore, moisture film also can be dissolved in the negative ion of mask plate inside wherein.Visible, because moisture film can dissolve above-mentioned positive and negative ion, therefore avoided at mask plate Surface Creation crystal.
For example, moisture film can dissolve sulfate ion (SO
4 2-), also can dissolve amine radical ion (NH
4 +), therefore stopped that the two is combined into crystal.
Step 202 applies PR on wafer.
Step 203, is coated with the mask plate of light-permeable hydrophilic coating being coated with described in applying on the wafer of PR, and exposes, develops.
Above-mentioned steps 202 is identical with prior art with 203 method, and it will not go into details herein, can be with reference to corresponding contents of the prior art.
So far, this flow process finishes.
To sum up, based on technical scheme provided by the present invention, first the upper surface at mask plate applies light-permeable hydrophilic coating, then on wafer, apply PR, finally on the wafer of PR, apply the mask plate that is coated with light-permeable hydrophilic coating being coated with, and expose, develop, visible, the present invention has increased light-permeable hydrophilic coating on the surface of mask plate, light-permeable hydrophilic coating is the diaphragm with barrier effect, it can be isolated the surface of mask plate, the negative ion that prevents mask plate inside contacts with air, therefore the negative ion that has stopped mask plate inside is combined with airborne positive ion and is generated crystal, and, because light-permeable hydrophilic coating has water wettability, on light-permeable hydrophilic coating, also absorption has water membrane, even if the negative ion of mask plate inside oozes out the surface of mask plate, moisture film can dissolve negative ion and the airborne positive ion of mask plate inside, also can avoid at mask plate Surface Creation crystal, therefore, improved the precision of reticle pattern, finally improved the precision of photoengraving pattern.
Further, also can be further at the lower surface of mask plate, apply light-permeable hydrophilic coating, further to improve the precision of photoengraving pattern.
The above, be only preferred embodiment of the present invention, is not intended to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (8)
1. a mask plate, the upper surface of described mask plate is coated with light-permeable hydrophilic coating, and described light-permeable hydrophilic coating becomes crystal for the ion of block mask version inside with airborne ions binding; On described light-permeable hydrophilic coating, also absorption has moisture film, for dissolving the ion of described airborne ion and described mask plate inside;
The lower surface of described mask plate is further coated with light-permeable hydrophilic coating.
2. mask plate according to claim 1, is characterized in that, described light-permeable hydrophilic coating is coating of titanium dioxide.
3. mask plate according to claim 1, is characterized in that, described airborne ion is positive ion; The ion of described mask plate inside is negative ion.
4. mask plate according to claim 3, is characterized in that, described positive ion is amine radical ion; Described negative ion is sulfate ion.
5. a photoetching method, the method comprises:
One mask plate is provided, upper surface at mask plate applies light-permeable hydrophilic coating, described light-permeable hydrophilic coating becomes crystal for the ion of block mask version inside with airborne ions binding, on described light-permeable hydrophilic coating, also absorption has moisture film, for dissolving the ion of described airborne ion and described mask plate inside; Lower surface at described mask plate applies light-permeable hydrophilic coating;
On wafer, apply photoresist PR.
Be coated with the mask plate of light-permeable hydrophilic coating being coated with described in applying on the wafer of PR, and expose, develop.
6. method according to claim 5, is characterized in that, described light-permeable hydrophilic coating is coating of titanium dioxide.
7. method according to claim 5, is characterized in that, described airborne ion is positive ion; The ion of described mask plate inside is negative ion.
8. method according to claim 7, is characterized in that, described positive ion is amine radical ion; Described negative ion is sulfate ion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110142385.1A CN102809896B (en) | 2011-05-30 | 2011-05-30 | Mask and photolithography method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110142385.1A CN102809896B (en) | 2011-05-30 | 2011-05-30 | Mask and photolithography method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102809896A CN102809896A (en) | 2012-12-05 |
| CN102809896B true CN102809896B (en) | 2014-03-19 |
Family
ID=47233627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110142385.1A Active CN102809896B (en) | 2011-05-30 | 2011-05-30 | Mask and photolithography method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102809896B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040047235A (en) * | 2002-11-29 | 2004-06-05 | 삼성전자주식회사 | Photomask |
| JP2005056981A (en) * | 2003-08-01 | 2005-03-03 | Fuji Photo Film Co Ltd | Exposure mask |
| WO2007116562A1 (en) * | 2006-03-30 | 2007-10-18 | Toppan Printing Co., Ltd. | Reflective photomask blank, process for producing the same, reflective photomask and process for producing semiconductor device |
| CN101661223A (en) * | 2008-08-29 | 2010-03-03 | 富士胶片株式会社 | Photomask blank and photomask |
| CN101813882A (en) * | 2010-04-30 | 2010-08-25 | 北京化工大学 | Method for preparing soft surface UV-visible photomask |
| WO2010114085A1 (en) * | 2009-03-31 | 2010-10-07 | リンテック株式会社 | Member for masking film, process for producing masking film using same, and process for producing photosensitive resin printing plate |
-
2011
- 2011-05-30 CN CN201110142385.1A patent/CN102809896B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040047235A (en) * | 2002-11-29 | 2004-06-05 | 삼성전자주식회사 | Photomask |
| JP2005056981A (en) * | 2003-08-01 | 2005-03-03 | Fuji Photo Film Co Ltd | Exposure mask |
| WO2007116562A1 (en) * | 2006-03-30 | 2007-10-18 | Toppan Printing Co., Ltd. | Reflective photomask blank, process for producing the same, reflective photomask and process for producing semiconductor device |
| CN101661223A (en) * | 2008-08-29 | 2010-03-03 | 富士胶片株式会社 | Photomask blank and photomask |
| WO2010114085A1 (en) * | 2009-03-31 | 2010-10-07 | リンテック株式会社 | Member for masking film, process for producing masking film using same, and process for producing photosensitive resin printing plate |
| CN101813882A (en) * | 2010-04-30 | 2010-08-25 | 北京化工大学 | Method for preparing soft surface UV-visible photomask |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102809896A (en) | 2012-12-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200532385A (en) | Method and system for immersion lithography process | |
| JP6533629B1 (en) | Rinse composition, method of forming resist pattern, and method of manufacturing semiconductor device | |
| US20090130601A1 (en) | Method for fabricating semiconductor device | |
| CN104102094B (en) | Mask baffle plate and manufacture method thereof | |
| JP2015055844A5 (en) | ||
| CN104698746B (en) | The forming method of resist pattern | |
| JP2014211474A (en) | Pellicle and pellicle production method | |
| JP2013092643A (en) | Production method of lithographic resist composition | |
| TW200915020A (en) | Photoresist liquid developer | |
| CN104698769B (en) | Splicing and exposure method of sapphire substrate | |
| CN203324647U (en) | Mask | |
| CN108735582A (en) | A kind of preparation method of photoresist film | |
| US8846305B2 (en) | Photolithography method including dual development process | |
| CN102809896B (en) | Mask and photolithography method thereof | |
| KR20200015770A (en) | Photomask Structure and Array Substrate Manufacturing Method | |
| JPH07120935A (en) | Alkaline developer for radiation sensitive composition | |
| US20150309411A1 (en) | Methods of Forming Pattern by Using Dual Tone Development Processes | |
| TW200842509A (en) | Hybrid mask and method of forming same | |
| CN103777364B (en) | A kind of manufacture method of graticle | |
| US8912489B2 (en) | Defect removal process | |
| CN102707576A (en) | Work structure for providing scanning path of immersion photoetching machine | |
| JP5966808B2 (en) | Manufacturing method of semiconductor device | |
| CN104407503B (en) | Exposure method and method for manufacturing semiconductor device | |
| JP2005202135A (en) | Method for cleaning photomask, method for manufacturing photomask, and method for handling photomask | |
| CN109799685A (en) | A kind of preceding road wafer photolithography method of SAW filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |