CN102809584A - Porous tin oxide film type room-temperature gas-sensitive element and preparation method thereof - Google Patents
Porous tin oxide film type room-temperature gas-sensitive element and preparation method thereof Download PDFInfo
- Publication number
- CN102809584A CN102809584A CN2012102618476A CN201210261847A CN102809584A CN 102809584 A CN102809584 A CN 102809584A CN 2012102618476 A CN2012102618476 A CN 2012102618476A CN 201210261847 A CN201210261847 A CN 201210261847A CN 102809584 A CN102809584 A CN 102809584A
- Authority
- CN
- China
- Prior art keywords
- tin oxide
- oxide film
- electrode
- ito
- electrophoretic deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a porous tin oxide film type room-temperature gas-sensitive element and a preparation method thereof. The method comprises the following steps of: S1, preparing a suspension, namely preparing a suspension by using tin oxide nano-powder by using acetone or acetylacetone as a solvent, adding an iodine solution into the suspension, stirring and performing ultrasonic dispersion; S2, performing film formation through electrophoretic deposition, namely performing electrophoretic deposition treatment on the suspension which is subjected to ultrasonic dispersion to obtain a loose and porous nanocrystalline tin oxide film; S3, performing heat treatment, namely performing heat treatment on the tin oxide film; and S4, manufacturing a surface electrode, namely manufacturing the electrode on the surface of the tin oxide film which is subjected to heat treatment to obtain the gas-sensitive element. According to the method, the SnO2 nanopowder is uniformly deposited on indium tin oxide (ITO) conductive glass under direct-current voltage by utilizing the electrophoresis principle to form the stable, loose and porous nanocrystalline SnO2 film; and the process is simple and high in repeatability, is convenient to operate, is suitable for large-scale production, the disadvantage that loose and porous films cannot be easily prepared by the conventional process is overcome, and the detection of low-concentration gas can be realized at room temperature.
Description
Technical field
The invention belongs to gas sensitive and element field, more specifically, relate to a kind of porous tin oxide membranous type room temperature gas sensor and preparation method thereof.
Background technology
Tin oxide (SnO
2) be a kind of typical n molded breadth bandgap semiconductor material, with its advantage highly sensitive, that response is fast, the scope of application is wide, stability is high that is that the gas sensor of host material has, be the highest metal oxide gas sensitive of current degree of being practical.Loose porous nanocrystalline SnO
2Film has the advantages that surface area is bigger, chemical activity is higher, and being expected to is the moment or the trace variation of detectable gas concentration at normal temperatures, thereby further improves the device degree of being practical and expand new application.
Be used to prepare SnO at present
2The technology of gas sensitive mainly contains that sol-gel process, spray pyrolysis are outer, chemical vapour deposition technique, sputtering method, thermal evaporation, pulsed laser deposition; And the supercritical flow seasoning etc.; But the film micromechanism of preparing is comparatively fine and close; And have the big and easy problem of reuniting of particle size, be unfavorable for absorption and the desorption of gas in film.
Recent years, adopt electrophoretic deposition successfully to prepare loose porous nanocrystalline In
2O
3, WO
3, TiO
2And SnO
2Membrane material.Electrophoretic deposition comprises two processes of electrophoresis and deposition, and the charged particle in the electrophoresis suspensioning liquid issues at extra electric field and gives birth to directed moving, and is deposited on the electrode at last.Than other film-forming process, it have reaction temperature simple with, equipment, can prepare advantages such as complicated shape large tracts of land film, cost are lower, and the film of preparing often is to be particularly suited for the preparation of gas sensitive by loose and porous structure.Document Fabrication of resistive CO gas sensor based on SnO
2Nanopowders via low frequency AC electrophoretic deposition [Mater Sci:Mater Electron20 (2009) 127 – 131] and SnO
2Among the gas sensor fabricated by low frequency alternating field electrophoretic deposition [Materials Science in Semiconductor Processing13 (2010) 151 – 155], adopt the commercially available SnO of the about 100nm of particle diameter
2Nano-powder; Be that dispersion medium is prepared suspending liquid with hexa metaphosphoric acid and diacetone respectively; Under the alternating voltage condition of 0.1 hertz frequency and 60V, carry out electrophoretic deposition; Behind 450 ~ 600 ℃ of sintering, obtain flawless loose porous nanocrystalline tin oxide film, under 300 ℃, CO gas has been had response characteristic preferably.Not enough is, in this method since the initial particle of nano-powder more than 100nm, particle size is bigger in the film, is not enough to appear nanocrystalline SnO
2Size effect, and adopt the alternating voltage condition, cause complex process, and the working temperature of this gas sensor is 200 ℃ ~ 400 ℃.
Summary of the invention
Defective to prior art; The object of the present invention is to provide a kind of preparation method of porous tin oxide membranous type room temperature gas sensor, be intended to solve in the prior art nano-powder size and be not enough to appear size effect and complex process, working temperature problem of higher more greatly.
For realizing above-mentioned purpose, the invention provides a kind of preparation method of porous tin oxide membranous type room temperature gas sensor, comprise the steps:
The S1 formulated suspension: with acetone or diacetone is that solvent is mixed with suspending liquid with tin oxide nano-powder, in said suspending liquid, adds to carry out ultrasonic dispersion after iodine solution stirs;
S2 electrophoretic deposition film forming: the suspending liquid after the ultrasonic dispersion is carried out electrophoretic deposition handle the loose porous tin oxide film of acquisition;
S3 thermal treatment: said tin oxide film is heat-treated;
S4 makes surface electrode: make electrode on tin oxide film surface after heat treatment and obtain the room temperature gas sensor.
Further, SnO in suspending liquid described in the step S1
2Concentration be 30 ~ 90g/L, the massfraction of iodine is 0.2 ~ 0.4%.
Further; Step S2 is specially: with anode and the negative electrode of ITO electro-conductive glass as electrophoretic deposition; The end ITO layer of the ITO electro-conductive glass of said negative electrode is corroded and removes and the formation insulated part, adds DC voltage at the anodic-cathodic two ends through on the ITO of said negative electrode electro-conductive glass, obtaining said loose porous nanocrystalline tin oxide film behind the electrophoretic deposition.
Further, saidly add DC voltage at the anodic-cathodic two ends and at room temperature carry out.
Further, before step S3, also comprise the air dry step: the tin oxide film air dry that obtains after with electrophoretic deposition.
Further, thermal treatment is carried out at 300 ~ 500 ℃ among the step S3.
Further, step S4 is specially: in the interdigital silver electrode of after heat treatment tin oxide film surface vapor deposition one deck, and the two ends of said electrode are caused the said insulated part of said ITO electro-conductive glass.
Further, also comprise preparation tin oxide nano-powder step before at step S1: tin and salpeter solution are warming up to 50 ~ 70 ℃ and stirring back acquisition β-stannic acid sediment; Said β-stannic acid sediment to upper strata clear liquid pH value of solution value is 6 ~ 7 to use the deionized water cyclic washing, with the said β-oven dry of stannic acid sediment and stannic acid that is ground into powder, with obtaining tin oxide nano-powder behind the said Powdered stannic acid sintering.
The preparation method of porous tin oxide membranous type gas sensor provided by the invention utilize principle of electrophoresis under DC voltage with SnO
2The nano-powder uniform deposition forms stable loose porous nanocrystalline SnO on the ITO electro-conductive glass
2Film.Simple, the easy to operate and good reproducibility of this preparation method's technology is suitable for large-scale production, and remedied the deficiency that common process is difficult to prepare loose porous film, can at room temperature realize the detection of light concentration gas, and application prospect is good.
The present invention also provides a kind of porous tin oxide membranous type room temperature gas sensor that adopts above-mentioned preparation method to obtain, and comprising: glass, be attached to said end ITO on glass be corroded the ITO conductive layer removing and form insulated part, be deposited on the tin oxide film of said ITO conductive layer surface and be attached to the electrode on the said tin oxide film.
Further, said electrode is the interdigitation electrode.
Owing to use nano-powder to do suspending liquid, and through adding iodine, measures such as ultrasonic dispersion have improved the stability of suspending liquid, make the SnO that the present invention makes
2It is tiny that film has crystal grain, micromechanism uniformly, and, help diffusion and the absorption of gas in material because the intrinsic characteristic of electrophoretic deposition itself makes that the film of formation is loose porous, make SnO
2Film at room temperature has good air-sensitive response performance to low concentration hydrogen sulphide gas.The component structure that this method is made is simple, easy to use, with low cost.
Description of drawings
Fig. 1 is preparation method's realization flow figure of the porous tin oxide membranous type room temperature gas sensor that provides of the embodiment of the invention;
Fig. 2 is the loose and porous structure synoptic diagram of the tin oxide film that provides of the embodiment of the invention;
Fig. 3 is the porous tin oxide gas sensor that provides of embodiment of the invention response curve to 7ppm sulfuretted hydrogen under room temperature (25 ℃);
Fig. 4 is the structural representation of the tin oxide membranous type gas sensor that provides of the embodiment of the invention.
Embodiment
In order to make the object of the invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Fig. 1 shows preparation method's realization flow of the porous tin oxide membranous type room temperature gas sensor that the embodiment of the invention provides, and for the ease of explanation, only shows the part relevant with the embodiment of the invention, and details are as follows:
The preparation method of porous tin oxide membranous type gas sensor comprises the steps:
The S1 formulated suspension: with acetone or diacetone is that solvent is mixed with suspending liquid with tin oxide nano-powder, in said suspending liquid, adds to carry out ultrasonic dispersion after iodine solution stirs; Wherein, the concentration of suspending liquid is 30 ~ 90g/L, add iodine massfraction be 0.2 ~ 0.4%.
S2 electrophoretic deposition film forming: the suspending liquid after the ultrasonic dispersion is carried out electrophoretic deposition handle the loose porous nanocrystalline tin oxide film of acquisition; Be specially: with anode and the negative electrode of ITO electro-conductive glass as electrophoretic deposition; The end ITO layer of the ITO electro-conductive glass of said negative electrode is corroded and removes and the formation insulated part, at room temperature adds DC voltage at the anodic-cathodic two ends through on the ITO of said negative electrode electro-conductive glass, obtaining loose porous nanocrystalline tin oxide film (as shown in Figure 2) behind the electrophoretic deposition certain hour; This tin oxide film has loose and porous structure, and bigger particle is that tin oxide nano crystal grain group bunch forms.
S3 thermal treatment: tin oxide film is heat-treated under 300 ~ 500 ℃; Before thermal treatment, also comprise the air dry step: the tin oxide film air dry that obtains after with electrophoretic deposition.
S4 makes surface electrode: in the interdigital silver electrode of after heat treatment tin oxide film surface vapor deposition one deck, and the said insulated part that the two ends of said electrode cause said ITO electro-conductive glass obtained gas sensor.
In embodiments of the present invention, before step S1, also comprise preparation tin oxide nano-powder step: in beaker, dispose tin (Sn) and nitric acid (HNO
3) mol ratio is 0.05 ~ 0.07 solution; Be warming up between 50 ~ 70 ℃ and stirred 10 hours; Generate white β-stannic acid sediment; Use the deionized water cyclic washing this to be precipitated to the supernatant liquor pH value of solution be 6 ~ 7, the back is poured out and dried to the supernatant liquor in the beaker grind sediment with mortar and obtain the white powder stannic acid half an hour, this stannic acid was obtained tin oxide nano-powder in two hours at 400 ~ 600 ℃ of following sintering.
The method that the embodiment of the invention provides is produced steady suspension with the tin oxide nano-powder that the precipitation method make, and utilizes electrophoretic deposition to carry out plated film, the loose porous nanocrystalline tin oxide film of deposition on the ITO electro-conductive glass, and then form element.The characteristics of utilizing this gas sensor resistance value to change with ambient atmos realize the detection to gas.
For the preparation method of the porous tin oxide membranous type gas sensor that the embodiment of the invention provides further is described, combine instance details are as follows at present:
[embodiment 1]
(1) configuration Sn and HNO in beaker
3Mol ratio is 0.05 solution; Being warming up to 50 ℃ stirred 10 hours; Generate white β-stannic acid sediment; Use the deionized water cyclic washing this to be precipitated to supernatant liquor pH be 6 ~ 7, the back is poured out and dried to the supernatant liquor in the beaker grind sediment with mortar and obtain the white powder stannic acid half an hour, this stannic acid was obtained tin oxide nano-powder in two hours at 400 ℃ of following sintering.
(2) with acetone be solvent, compound concentration is the suspending liquid of 30g/L, and to add massfraction be 0.2% iodine, and the back that stirs is carried out ultrasonic dispersion with ultrasonic washing instrument to it, to improve stability of suspension and dispersiveness.
(3) with anode and the negative electrode of ITO electro-conductive glass as electrophoretic deposition; The end ITO layer of the ITO electro-conductive glass of negative electrode is corroded and removes and form insulated part; Conveniently to draw surface electrode; 50 volts of at room temperature perfectly straight stream voltages deposit and on the electro-conductive glass of negative electrode, obtain loose porous nanocrystalline tin oxide film after 6 minutes.
(4) treat the film air dry after, 300 ℃ of following thermal treatments 1 hour.
(5), the two ends of electrode are caused the insulated part of the conductive layer that is corroded on the electro-conductive glass, test air-sensitive performance in the interdigital silver electrode of after heat treatment tin oxide film surface vapor deposition one deck.
Loose porous nanocrystalline tin oxide film as shown in Figure 3, as to adopt the preparation method of the porous tin oxide membranous type room temperature gas sensor that embodiment 1 provides to obtain under 25 ℃ of working temperatures, is 53 to the response sensitivity of 7ppm hydrogen sulfide gas, and the response time is 2 seconds.
[embodiment 2]
(1) configuration Sn and HNO in beaker
3Mol ratio is 0.06 solution; Being warming up to 60 ℃ stirred 10 hours; Generate white β-stannic acid sediment; Use the deionized water cyclic washing this to be precipitated to supernatant liquor pH be 6 ~ 7, the back is poured out and dried to the supernatant liquor in the beaker grind sediment with mortar and obtain the white powder stannic acid half an hour, this stannic acid was obtained tin oxide nano-powder in two hours at 500 ℃ of following sintering.
(2) with acetone be solvent, compound concentration is the suspending liquid of 50g/L, and to add massfraction be 0.3% iodine, and the back that stirs is carried out ultrasonic dispersion with ultrasonic washing instrument to it, to improve stability of suspension and dispersiveness.
(3) with anode and the negative electrode of ITO electro-conductive glass as electrophoretic deposition; The end ITO layer of the ITO electro-conductive glass of negative electrode is corroded and removes and form insulated part; Conveniently to draw surface electrode; 40 volts of at room temperature perfectly straight stream voltages deposit and on the electro-conductive glass of negative electrode, obtain loose porous nanocrystalline tin oxide film after 15 minutes.
(4) treat the film air dry after, 400 ℃ of following thermal treatments 1 hour.
(5), the two ends of electrode are caused the insulated part of the conductive layer that is corroded on the electro-conductive glass, test air-sensitive performance in the interdigital silver electrode of after heat treatment tin oxide film surface vapor deposition one deck.
The loose porous nanocrystalline tin oxide film that the method that adopts embodiment 2 to provide obtains is 14 to the response sensitivity of 4.1ppm hydrogen sulfide gas under 25 ℃ of working temperatures, and the response time is 4 seconds.
[embodiment 3]
(1) configuration Sn and HNO in beaker
3Mol ratio is 0.07 solution; Being warming up to 70 ℃ stirred 10 hours; Generate white β-stannic acid sediment; Use the deionized water cyclic washing this to be precipitated to supernatant liquor pH be 6 ~ 7, the back is poured out and dried to the supernatant liquor in the beaker grind sediment with mortar and obtain the white powder stannic acid half an hour, this stannic acid was obtained tin oxide nano-powder in two hours at 600 ℃ of following sintering.
(2) with acetone be solvent, compound concentration is the suspending liquid of 90g/L, and to add massfraction be 0.4% iodine, and the back that stirs is carried out ultrasonic dispersion with ultrasonic washing instrument to it, to improve stability of suspension and dispersiveness.
(3) with anode and the negative electrode of ITO electro-conductive glass as electrophoretic deposition; The end ITO layer of the ITO electro-conductive glass of negative electrode is corroded and removes and form insulated part; Conveniently to draw surface electrode; 60 volts of at room temperature perfectly straight stream voltages deposit and on the electro-conductive glass of negative electrode, obtain loose porous nanocrystalline tin oxide film after 10 minutes.
(4) treat the film air dry after, 500 ℃ of following thermal treatments 1 hour.
(5) film that will be after bakingout process is in the interdigital silver electrode of surperficial vapor deposition one deck, and the two ends of electrode are caused the insulated part of the conductive layer that is corroded on the electro-conductive glass, test air-sensitive performance.
The loose porous nanocrystalline tin oxide film that the method that adopts embodiment 3 to provide obtains under 25 ℃ of working temperatures, is 3 to the response sensitivity of 2ppm hydrogen sulfide gas, and the response time is 8 seconds.
As shown in Figure 4, the porous tin oxide membranous type room temperature gas sensor that adopts method for preparing to obtain comprises: glass 1, be attached to ITO conductive layer 2 on the glass 1, be deposited on the tin oxide film 3 on ITO conductive layer 2 surfaces and be attached to the electrode 4 on the tin oxide film 3; The removal that is corroded of the ITO conductive layer of glass end; Wherein electrode is the interdigitation electrode, in the interdigital silver electrode of tin oxide film 3 surperficial vapor depositions, and the two ends of electrode is caused the insulated part of the conductive layer that is corroded on the electro-conductive glass.
Those skilled in the art will readily understand; The above is merely preferred embodiment of the present invention; Not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, be equal to and replace and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the preparation method of a porous tin oxide membranous type room temperature gas sensor is characterized in that, comprises the steps:
The S1 formulated suspension: with acetone or diacetone is that solvent is mixed with suspending liquid with tin oxide nano-powder, in said suspending liquid, adds to carry out ultrasonic dispersion after iodine solution stirs;
S2 electrophoretic deposition film forming: the suspending liquid after the ultrasonic dispersion is carried out electrophoretic deposition handle, obtain loose porous nanocrystalline tin oxide film;
S3 thermal treatment: said nanocrystalline tin oxide film is heat-treated;
S4 makes surface electrode: make electrode on nanocrystalline tin oxide film surface after heat treatment and obtain tin oxide membranous type room temperature gas sensor.
2. the method for claim 1 is characterized in that, SnO in suspending liquid described in the step S1
2Concentration be 30 ~ 90g/L, the massfraction of iodine is 0.2 ~ 0.4%.
3. the method for claim 1; It is characterized in that; Step S2 is specially: with anode and the negative electrode of ITO electro-conductive glass as electrophoretic deposition; The end ITO layer of the ITO electro-conductive glass of said negative electrode is corroded and removes and the formation insulated part, adds DC voltage at the anodic-cathodic two ends through on the ITO of said negative electrode electro-conductive glass, obtaining said loose porous nanocrystalline tin oxide film behind the electrophoretic deposition.
4. method as claimed in claim 3 is characterized in that, saidly adds DC voltage at the anodic-cathodic two ends and at room temperature carries out.
5. the method for claim 1 is characterized in that, before step S3, also comprises the air dry step: the nanocrystalline tin oxide film air dry that obtains after with electrophoretic deposition.
6. the method for claim 1 is characterized in that, thermal treatment is carried out at 300 ~ 500 ℃ among the step S3.
7. method as claimed in claim 3 is characterized in that step S4 is specially: in the interdigital silver electrode of nanocrystalline tin oxide film surface vapor deposition one deck after heat treatment, and the two ends of said electrode are caused the said insulated part of said ITO electro-conductive glass.
8. the method for claim 1 is characterized in that, also comprises preparation tin oxide nano-powder step before at step S1: tin and salpeter solution are warming up to 50 ~ 70 ℃ and stirring back acquisition β-stannic acid sediment; Said β-stannic acid sediment to upper strata clear liquid pH value of solution value is 6 ~ 7 to use the deionized water cyclic washing, with the said β-oven dry of stannic acid sediment and stannic acid that is ground into powder, with obtaining tin oxide nano-powder behind the said Powdered stannic acid sintering.
9. tin oxide membranous type room temperature gas sensor that adopts each described preparation method of claim 1-8 to obtain; It is characterized in that, comprising: glass, be attached to said glass surface the ITO conductive layer, be deposited on the tin oxide film of said ITO conductive layer surface and be attached to the electrode on the said tin oxide film; The removal that is corroded of the ITO conductive layer of said glass end.
10. tin oxide membranous type room temperature gas sensor as claimed in claim 9 is characterized in that said electrode is the interdigitation electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102618476A CN102809584A (en) | 2012-07-26 | 2012-07-26 | Porous tin oxide film type room-temperature gas-sensitive element and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102618476A CN102809584A (en) | 2012-07-26 | 2012-07-26 | Porous tin oxide film type room-temperature gas-sensitive element and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102809584A true CN102809584A (en) | 2012-12-05 |
Family
ID=47233344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102618476A Pending CN102809584A (en) | 2012-07-26 | 2012-07-26 | Porous tin oxide film type room-temperature gas-sensitive element and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102809584A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113113530A (en) * | 2021-03-16 | 2021-07-13 | 西北工业大学 | Preparation method of porous alloy electrode with BASE film attached to surface |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85100030A (en) * | 1985-04-01 | 1986-06-10 | 天津大学 | Thin film SnO 2 gas-sensitive element and manufacture method thereof |
| CN1284474A (en) * | 1999-08-17 | 2001-02-21 | 惠春 | Tin dioxide-base nanometer crystal gas-sensitive material and its preparation |
| CN1438179A (en) * | 2003-03-14 | 2003-08-27 | 中国科学院上海硅酸盐研究所 | Method for preparing nano tin-oxide powder |
| CN101420848A (en) * | 2006-02-15 | 2009-04-29 | 博塔诺凯普有限公司 | Applications of microencapsulated essential oils |
| CN101824603A (en) * | 2010-06-02 | 2010-09-08 | 福州大学 | Method for manufacturing composite film gas sensor |
| CN102400199A (en) * | 2011-12-16 | 2012-04-04 | 昆明理工大学 | Electrophoretic deposition preparation method for V2O5 film |
| CN102426176A (en) * | 2011-11-18 | 2012-04-25 | 南京工业大学 | Gas sensor and manufacturing technique thereof |
| CN102534731A (en) * | 2012-01-21 | 2012-07-04 | 中国科学技术大学 | Method for preparing vanadium dioxide film through electrophoretic deposition |
-
2012
- 2012-07-26 CN CN2012102618476A patent/CN102809584A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85100030A (en) * | 1985-04-01 | 1986-06-10 | 天津大学 | Thin film SnO 2 gas-sensitive element and manufacture method thereof |
| CN1284474A (en) * | 1999-08-17 | 2001-02-21 | 惠春 | Tin dioxide-base nanometer crystal gas-sensitive material and its preparation |
| CN1438179A (en) * | 2003-03-14 | 2003-08-27 | 中国科学院上海硅酸盐研究所 | Method for preparing nano tin-oxide powder |
| CN101420848A (en) * | 2006-02-15 | 2009-04-29 | 博塔诺凯普有限公司 | Applications of microencapsulated essential oils |
| CN101824603A (en) * | 2010-06-02 | 2010-09-08 | 福州大学 | Method for manufacturing composite film gas sensor |
| CN102426176A (en) * | 2011-11-18 | 2012-04-25 | 南京工业大学 | Gas sensor and manufacturing technique thereof |
| CN102400199A (en) * | 2011-12-16 | 2012-04-04 | 昆明理工大学 | Electrophoretic deposition preparation method for V2O5 film |
| CN102534731A (en) * | 2012-01-21 | 2012-07-04 | 中国科学技术大学 | Method for preparing vanadium dioxide film through electrophoretic deposition |
Non-Patent Citations (2)
| Title |
|---|
| AMIR REZA GARDESHZADEH ET. AL.: "Fabrication of resistive CO gas sensor based on SnO2 nanopowders via low frequency AC electrophoretic deposition", 《J. MATER SCI: MATER ELECTRON》 * |
| AMIR REZA GARDESHZADEH ET. AL.: "SnO2 gas sensor fabricated by low frequency alternating field electrophoretic deposition", 《MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113113530A (en) * | 2021-03-16 | 2021-07-13 | 西北工业大学 | Preparation method of porous alloy electrode with BASE film attached to surface |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Aboagye et al. | Electrospun carbon nanofibers with surface-attached platinum nanoparticles as cost-effective and efficient counter electrode for dye-sensitized solar cells | |
| CN103543184B (en) | A kind of gas sensor based on cobaltosic oxide nano pin and preparation method thereof | |
| Anwar et al. | Vertically-aligned carbon nanotube counter electrodes for dye-sensitized solar cells | |
| Sun et al. | Application of photocatalytic materials in sensors | |
| CN105384358A (en) | Preparation method and application research of WO3 nanosheet array film | |
| CN103991904B (en) | Magn é li phase oxidation titanium nano-wire array and preparation method thereof | |
| Shikoh et al. | Optimization of ITO glass/TiO2 based DSSC photo-anodes through electrophoretic deposition and sintering techniques | |
| CN103746077A (en) | Organic-inorganic composite solar cell and manufacturing method thereof | |
| CN105428537A (en) | Perovskite solar cell based on titanium dioxide/perovskite novel composite nano structure, and preparation method thereof | |
| CN105489384B (en) | A kind of C/Sb2S3Preparation method of the laminated film to electrode material | |
| CN104198560A (en) | Preparation method of graphene modified porous titanium dioxide composite film | |
| CN103560014A (en) | Counter electrode for dye-sensitized battery, preparation method of counter electrode and dye-sensitized battery | |
| CN103515536B (en) | A kind of simple method for preparing of transoid organic solar batteries | |
| Shin et al. | Highly transparent dual-sensitized titanium dioxide nanotube arrays for spontaneous solar water splitting tandem configuration | |
| JP2000231943A (en) | Semiconductor electrode and its manufacture | |
| CN102592842A (en) | Method for preparing carbon counter electrode in dye sensitized solar cell | |
| CN102442787B (en) | Nano air-sensitive thin film and preparation method thereof | |
| Kim et al. | Novel application of platinum ink for counter electrode preparation in dye sensitized solar cells | |
| CN102222575B (en) | Preparation method for photoanode of dye-sensitized solar cell | |
| Tang et al. | Research progress of the counter electrode in dye-sensitized solar cells | |
| Ling et al. | Template synthesis and photovoltaic application of CdS nanotube arrays | |
| Qin et al. | Improvement of the performance and stability of the ZnO nanoparticulate film electrode by surface modification for dye-sensitized solar cells | |
| CN102324306A (en) | Dye-sensitized solar cell working electrode and preparation method that nano silver wire mixes | |
| CN102809584A (en) | Porous tin oxide film type room-temperature gas-sensitive element and preparation method thereof | |
| CN103714976A (en) | Cu3SnS4 nano-material counter electrode for dye-sensitized solar cell and preparing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121205 |