CN102801108A - 多量子阱半导体激光器及其制备方法 - Google Patents
多量子阱半导体激光器及其制备方法 Download PDFInfo
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- CN102801108A CN102801108A CN2012102752761A CN201210275276A CN102801108A CN 102801108 A CN102801108 A CN 102801108A CN 2012102752761 A CN2012102752761 A CN 2012102752761A CN 201210275276 A CN201210275276 A CN 201210275276A CN 102801108 A CN102801108 A CN 102801108A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 32
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- 229910052751 metal Inorganic materials 0.000 claims description 3
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- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 claims description 2
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CN102801108A true CN102801108A (zh) | 2012-11-28 |
CN102801108B CN102801108B (zh) | 2015-06-24 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015120896A1 (de) * | 2015-12-02 | 2017-06-08 | Osram Opto Semiconductors Gmbh | Elektronisches Bauteil sowie Verfahren zur Herstellung eines elektronischen Bauteils |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05226776A (ja) * | 1992-02-17 | 1993-09-03 | Mitsubishi Electric Corp | レーザダイオードアレイ |
US5937313A (en) * | 1996-12-11 | 1999-08-10 | Hyundai Electronics Industries Co., Ltd. | Method of forming quantum wire for compound semiconductor |
JP2000188443A (ja) * | 1998-12-21 | 2000-07-04 | Nec Corp | 半導体量子ドット素子とその製造方法 |
US20050045868A1 (en) * | 2003-08-26 | 2005-03-03 | Fujitsu Limited | Optical semiconductor device and method for fabricating the same |
CN1866653A (zh) * | 2005-05-20 | 2006-11-22 | 中国科学院半导体研究所 | 一种高可靠性980nm大功率量子阱半导体激光器 |
US20080054249A1 (en) * | 2005-06-27 | 2008-03-06 | The Regents Of The University Of California | Quantum dot based optoelectronic device |
CN100468790C (zh) * | 2002-05-30 | 2009-03-11 | 克里公司 | 具有不掺杂包层和多量子阱的ⅲ族氮化物led |
CN102299222A (zh) * | 2010-06-25 | 2011-12-28 | 亚威朗(美国) | 具有改进激活区的发光器件 |
CN202712685U (zh) * | 2012-08-03 | 2013-01-30 | 中国科学院西安光学精密机械研究所 | 多量子阱半导体激光器 |
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- 2012-08-03 CN CN201210275276.1A patent/CN102801108B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05226776A (ja) * | 1992-02-17 | 1993-09-03 | Mitsubishi Electric Corp | レーザダイオードアレイ |
US5937313A (en) * | 1996-12-11 | 1999-08-10 | Hyundai Electronics Industries Co., Ltd. | Method of forming quantum wire for compound semiconductor |
JP2000188443A (ja) * | 1998-12-21 | 2000-07-04 | Nec Corp | 半導体量子ドット素子とその製造方法 |
CN100468790C (zh) * | 2002-05-30 | 2009-03-11 | 克里公司 | 具有不掺杂包层和多量子阱的ⅲ族氮化物led |
US20050045868A1 (en) * | 2003-08-26 | 2005-03-03 | Fujitsu Limited | Optical semiconductor device and method for fabricating the same |
CN1866653A (zh) * | 2005-05-20 | 2006-11-22 | 中国科学院半导体研究所 | 一种高可靠性980nm大功率量子阱半导体激光器 |
US20080054249A1 (en) * | 2005-06-27 | 2008-03-06 | The Regents Of The University Of California | Quantum dot based optoelectronic device |
CN102299222A (zh) * | 2010-06-25 | 2011-12-28 | 亚威朗(美国) | 具有改进激活区的发光器件 |
CN202712685U (zh) * | 2012-08-03 | 2013-01-30 | 中国科学院西安光学精密机械研究所 | 多量子阱半导体激光器 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015120896A1 (de) * | 2015-12-02 | 2017-06-08 | Osram Opto Semiconductors Gmbh | Elektronisches Bauteil sowie Verfahren zur Herstellung eines elektronischen Bauteils |
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