CN102800744A - Manufacturing method for back contact crystalline silicon solar cell - Google Patents
Manufacturing method for back contact crystalline silicon solar cell Download PDFInfo
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- CN102800744A CN102800744A CN2011101416218A CN201110141621A CN102800744A CN 102800744 A CN102800744 A CN 102800744A CN 2011101416218 A CN2011101416218 A CN 2011101416218A CN 201110141621 A CN201110141621 A CN 201110141621A CN 102800744 A CN102800744 A CN 102800744A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 238000009792 diffusion process Methods 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 26
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- 238000002360 preparation method Methods 0.000 claims description 7
- 238000003892 spreading Methods 0.000 claims description 4
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- 238000009776 industrial production Methods 0.000 abstract description 3
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- 229910052710 silicon Inorganic materials 0.000 description 75
- 239000010703 silicon Substances 0.000 description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 74
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000012634 fragment Substances 0.000 description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
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- 239000006117 anti-reflective coating Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a manufacturing method for a back contact crystalline silicon solar cell. The manufacturing method comprises the following steps of: performing texturing and diffusion on the surface of a semiconductor substrate; reserving through holes in the semiconductor substrate after the diffusion; etching the semiconductor substrate with the through holes; removing a doped glass layer from the etched semiconductor substrate; coating a film on the illuminated surface of the semiconductor substrate from which the doped glass layer is removed; and preparing electrodes and a back surface field on the film-coated semiconductor substrate to obtain the back contact crystalline silicon solar cell. According to the method, the surface of the semiconductor substrate is diffused, and the through holes are reserved in the semiconductor substrate after the diffusion, so that the inner walls of the through holes cannot be diffused, namely emitter junctions in the through holes are avoided. Compared with the prior art, the method has the advantages of eliminating a laser isolation procedure, reducing the electric leakage risks of the cell and greatly lowering the fragmentation rate of the cell. In addition, the laser isolation procedure is eliminated, so that a process is simple, equipment cost is reduced, and industrial production is facilitated.
Description
Technical field
The application relates to technical field of solar batteries, particularly relates to a kind of back of the body contact crystalline silicon solar cell comprising piece making method.
Background technology
Solar cell is also claimed photovoltaic cell, is the semiconductor device that a kind of luminous energy with the sun is converted into electric energy.Because it is a Green Product, can cause environmental pollution, and be renewable resource, so under current energy starved situation, solar cell is a kind of novel energy that arranged wide development prospect.At present; Solar cell more than 80% is to be prepared from crystalline silicon material; Therefore, prepare high efficiency crystal-silicon solar cell for utilizing solar power generation that crucial meaning is arranged on a large scale, because the sensitive surface of back of the body contact crystalline silicon solar cell does not have the main grid line; Anodal and negative pole all is positioned at the shady face of battery sheet; The shading rate that this just greatly reduces the sensitive surface grid line has improved the conversion efficiency of battery sheet, so carry on the back the focus that contact crystalline silicon solar cell comprising becomes present solar cell research and development.
At present, the manufacturing process standardization of back of the body contact crystalline silicon solar cell comprising sheet, its key step is following:
1. perforate: adopt laser to open at least one conductive hole at silicon chip.
2. making herbs into wool: make originally the silicon chip surface (comprising front and back) of light form scraggly structure prolonging light through chemical reaction, thereby improve the absorption of solar battery sheet to light at its surperficial propagation path.
3. diffusion system knot: P type silicon chip surface and conductive hole inwall after diffusion become N type electrode, or N type silicon chip surface and conductive hole inwall after diffusion become P type electrode, form PN junction, make silicon chip have photovoltaic effect.
4. peripheral etching: etching is carried out in the side to silicon chip.
5. removal doped glass layer: the doped glass layer that forms when silicon chip surface is spread is removed.
6. plated film: the coated with antireflection film on silicon chip sensitive surface surface, mainly contain two types of antireflective coatings at present, silicon nitride film and oxidation titanium film mainly play antireflective and passivation.
7. print electrode and electric field: backplate, front electrode and back surface field are printed onto on the silicon chip.
8. sintering: make between electrode, electric field and the silicon chip of printing and form alloy.
9. laser is isolated: the conductive layer of P-N being tied short circuit that the purpose of this step forms between the silicon chip back side and conductive hole when being to remove diffusion system knot.
In the existing manufacturing process; In diffusion system knot step; Can between solar cell back light face and conductive hole, form P-N is tied the conductive layer of short circuit; This greatly reduces the parallel resistance of battery sheet, occurs electric leakage easily, so need the conductive layer between the P-N knot be got rid of through the laser isolation step.May make solar battery sheet new leakage current path occur but adopt laser to isolate, cause the performance of battery sheet to reduce, in addition, laser is bigger to the damage of battery sheet itself, in the laser isolation processes, fragment possibly occur, has increased the production cost of battery sheet.
Summary of the invention
In view of this; The application embodiment provides a kind of back of the body contact crystalline silicon solar cell comprising piece making method; Perforate again after to the semiconductor chip diffusion into the surface; So just can promptly between backlight of solar cell and conductive hole, can not form the conductive layer of P-N being tied short circuit so that the inwall of through hole can not spread.
To achieve these goals, the technical scheme that provides of the application embodiment is following:
A kind of back of the body contact crystalline silicon solar cell comprising piece making method comprises:
Making herbs into wool, diffusion are carried out in surface at semiconductor chip;
Perforate on said semiconductor chip after the diffusion;
Said semiconductor chip after the perforate is carried out etching;
Doped glass layer after the removal etching on the said semiconductor chip;
Plated film on the sensitive surface of removing said semiconductor chip behind the doped glass layer;
Behind preparation electrode on the said semiconductor chip behind the plated film and back of the body electric field, obtain carrying on the back the contact crystalline silicon solar cell comprising sheet.
Preferably, the process that spreads on the surface of semiconductor chip is:
Single or double to said semiconductor chip spreads.
Preferably,, remove after the etching before the doped glass layer on the said semiconductor chip, also comprise after the spreading of said semiconductor chip:
Etching is carried out in shady face and side to said semiconductor chip.
Preferably, perforate is on said semiconductor chip after the diffusion:
Adopt laser on said semiconductor chip after the diffusion, to open at least one through hole.
Visible by above technical scheme; This back of the body contact crystalline silicon solar cell comprising piece making method that the application embodiment provides, this method at first spreads surface of semiconductor chip, after diffusion, carries out perforate at semiconductor chip again; So just can be so that the inwall of through hole can not spread; Promptly in through hole, do not have emitter junction, so also can not form the conductive layer of P-N being tied short circuit between solar cell back light face that obtains at last and the conductive hole, P-N becomes off-state.
Compared with prior art, this method can reduce laser and isolate operation, has reduced battery sheet electric leakage risk, and has made the fragment rate of battery sheet reduce significantly.In addition, reduce laser and isolate operation, make technology simpler, and reduced equipment cost, help large-scale industrial production.
Description of drawings
In order to be illustrated more clearly in the application embodiment or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiment that put down in writing among the application, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
The flow chart of the back of the body contact crystalline silicon solar cell comprising piece making method that Fig. 1 provides for present embodiment one;
The structural representation of silicon chip after the making herbs into wool that Fig. 2 provides for present embodiment one;
The structural representation of silicon chip after the diffusion that Fig. 3 provides for present embodiment one;
The structural representation of silicon chip after the perforate that Fig. 4 provides for present embodiment one;
The structural representation of silicon chip after the etching that Fig. 5 provides for present embodiment one;
The structural representation of silicon chip behind the plated film that Fig. 6 provides for present embodiment one;
The structural representation of electrode that Fig. 7 provides for present embodiment one and back of the body electric field preparation back silicon chip;
The flow chart of the back of the body contact crystalline silicon solar cell comprising piece making method that Fig. 8 provides for present embodiment two;
The structural representation of silicon chip after the making herbs into wool that Fig. 9 provides for present embodiment two;
The structural representation of silicon chip after the diffusion that Figure 10 provides for present embodiment two;
The structural representation of silicon chip after the perforate that Figure 11 provides for present embodiment two;
The structural representation of silicon chip after the etching that Figure 12 provides for present embodiment two;
The structural representation of electrode that Figure 13 provides for present embodiment two and back of the body electric field preparation back silicon chip.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
A lot of details have been set forth in the following description so that make much of the present invention; But the present invention can also adopt other to be different from alternate manner described here and implement; Those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed specific embodiment.
Secondly, the present invention combines sketch map to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The profile of expression device architecture can be disobeyed general ratio and done local the amplification, and said sketch map is example, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
In the manufacturing process of existing back of the body contact crystalline silicon solar cell comprising sheet; After perforate, making herbs into wool, spread in the system knot step, can between solar cell back light face and conductive hole, form P-N is tied the conductive layer of short circuit, this greatly reduces the parallel resistance of battery sheet; Electric leakage appears easily; So in order to make the P-N knot break off, existing processes also need be passed through the laser isolation step after sintering step; An isolation channel is set around conductive hole, the conductive layer between the P-N knot is got rid of with realization.
Through to prior art research; The applicant finds: because in sintering step; The battery sheet may temperature distortion, and the surface is no longer smooth, and this requires than higher the alignment precision that excuse me when laser is isolated with regard to making; Will cause new leakage current path otherwise occur departing from, make the battery piece performance descend.In addition, use laser that the battery sector-meeting is produced damage, the fragment phenomenon possibly occur, make the defect ware rate of battery sheet rise, increased the production cost of battery sheet.For this reason; The present invention proposes a solution; Basic thought is: at first semiconductor chip is carried out making herbs into wool, diffusion; On semiconductor chip, carrying out perforate after the diffusion again, so just can promptly between backlight of solar cell and conductive hole, can not form the conductive layer of P-N being tied short circuit so that the inwall of through hole can not spread.
Below with silicon chip as semiconductor chip, through several embodiment technical scheme of the present invention is described:
Embodiment one:
Please refer to Fig. 1, the flow chart of the back of the body contact crystalline silicon solar cell comprising piece making method that Fig. 1 provides for present embodiment one, as shown in Figure 1, this method may further comprise the steps:
Step S101: on the silicon chip single face, carry out making herbs into wool, form surface texture;
In embodiments of the present invention, the single face that making herbs into wool is chosen in silicon chip 1 carries out, and the purpose of making herbs into wool is to make originally the silicon chip surface of light form scraggly structure prolonging light at its surperficial propagation path through chemical reaction, thereby improves the absorption of silicon chip to light.The structural representation of silicon chip is as shown in Figure 2 after the making herbs into wool, and 1 is silicon chip among the figure, and 2 is sensitive surface, and 3 is shady face, and 4 is matte.In addition, before making herbs into wool, need to remove the greasy dirt and the metal impurities on silicon chip 1 surface, and remove the cutting affected layer on silicon chip 1 surface.
Step S102: spread on the surface at silicon chip, forms the P-N knot;
Foreign atom is diffused on the matte 4 and side of silicon chip 1, as shown in Figure 3, for spreading the structural representation of back silicon chip, 5 is emitter junction among the figure.P type silicon chip 1 surface after diffusion becomes the N type, or N type silicon chip 1 surface after diffusion becomes the P type, forms PN junction, makes silicon chip 1 have photovoltaic effect, and concentration, the degree of depth and the uniformity of diffusion directly influence the electrical property of solar battery sheet.
Step S103: perforate on silicon chip;
Adopt laser on silicon chip, to leave at least one through hole; It acts on can be provided with the shady face that electrode is guided to the electric current of battery sheet sensitive surface the battery sheet in the through hole; So just can reduce the shading rate of front gate line so that the positive pole of battery sheet and negative pole all are positioned at the back side of battery sheet.In the embodiment of the invention, Wavelength of Laser that perforate is adopted can be 1064nm, 1030nm, 532nm or 355nm.In addition, in other embodiment of the application, can also adopt the mode of machine drilling or chemical corrosion to carry out perforate.
The structural representation of silicon chip is as shown in Figure 4 after the perforate, and 6 is through hole among the figure, and 7 is through-hole wall.In the application embodiment, spread the technology of perforate more earlier owing to adopt, thus do not have emitter junction in the through hole that after perforate, forms, thus there is not the conductive layer of P-N being tied short circuit between the conductive hole of follow-up formation and the shady face.
Step S104: etching is carried out in the side to silicon chip;
Etching is carried out in side to silicon chip 1, and is as shown in Figure 5, its objective is the emitter junction that forms in silicon chip 1 side when removing diffusion system knot.
The mode of etching has multiple, can be wet etching, also can be dry etching, and wherein: wet etching comprises: the chemical liquids corrosion, and chemical corrosion slurry corrosion etc., dry etching comprises plasma gas corrosion etc.In embodiments of the present invention, when etching, can adopt the side etching 15min of plasma gas, wherein SF in the plasma gas to silicon chip 1
6Flow be 200scm, O
2Flow be 30scm, N
2Flow be 300scm, pressure is chosen as 100Pa, glow power is chosen as 700W.
Step S105: remove the doped glass layer on the silicon chip;
Can the doped glass layer that silicon chip 1 forms when spreading be removed through this step.
Step S106: on the sensitive surface of silicon chip, carry out plated film;
Sensitive surface at silicon chip 1 carries out plated film, and the effect of this film is the reflection that reduces sunlight, maximally utilises solar energy.In embodiments of the present invention, adopt PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition method) on silicon chip 1, to form antireflective coating.As shown in Figure 6,8 is antireflective coating among the figure.In addition, adopting PECVD is one embodiment of the present of invention, should not be construed as limiting the invention, and in other embodiment of the present invention, film plating process can also adopt additive method well-known to those skilled in the art.
Step S107: preparation electrode and back of the body electric field on the silicon chip behind the plated film;
In embodiments of the present invention, preparation electrode and back of the body electric field comprise: on silicon chip 1, print electrode and carry on the back electric field; Sintering.
Wherein, can adopt silk screen printing that shady face electrode, sensitive surface electrode and shady face electric field are printed on the silicon chip 1.Fig. 7 is the structural representation of electrode and back of the body electric field preparation back silicon chip, and 9 is the hole backplate among the figure, and 10 is back electrode, and 11 are back of the body electric field, and 12 is the sensitive surface electrode, and 13 is pore electrod.Wherein, sensitive surface electrode 12, pore electrod 13, hole backplate 9 can separately generate, and three kinds of electrodes can adopt same material, also can adopt different materials.In other embodiment of the present invention, can also through methods such as vacuum evaporation, sputter with electrode and the back of the body electric field attached on the silicon chip 1.Make through sintering and to form ohmic contact between hole backplate 9, back electrode 10, back of the body electric field 11, sensitive surface electrode 12, pore electrod 13 and the silicon chip 1.
Visible by above technical scheme; This back of the body contact crystalline silicon solar cell comprising piece making method that the application embodiment provides, this method at first spreads surface of semiconductor chip, after diffusion, carries out perforate at semiconductor chip again; So just can be so that the inwall of through hole can not spread; Promptly in through hole, do not have emitter junction, so also can not form the conductive layer of P-N being tied short circuit between solar cell back light face that obtains at last and the conductive hole, P-N becomes off-state.
Compared with prior art, this method can reduce laser and isolate operation, has reduced battery sheet electric leakage risk, and has made the fragment rate of battery sheet reduce significantly.In addition, reduce laser and isolate operation, make technology simpler, and reduced equipment cost, help large-scale industrial production.
Embodiment two:
Please refer to Fig. 8, a kind of flow chart of carrying on the back the contact crystalline silicon solar cell comprising piece making method that Fig. 8 provides for present embodiment two, as shown in Figure 8, this method may further comprise the steps:
Step S201: on two surfaces of silicon chip, all carry out making herbs into wool, form surface texture;
The structural representation of silicon chip is as shown in Figure 9 after the making herbs into wool, on two surfaces of silicon chip 1, all forms matte 4 among the figure.
Step S202: on the surface of silicon chip, all diffuse to form the P-N knot;
The structural representation of diffusion back silicon chip is shown in figure 10, among the figure 5 on two surfaces of silicon chip 1 and side all diffusion emitter junction is arranged.
Above-mentioned these two steps are compared with step S101～step 103, just on silicon chip two-sided, all carried out making herbs into wool, diffusion, and the technology of corresponding step are all identical.
Step S203: perforate on silicon chip;
The structural representation of silicon chip is shown in figure 11 after the perforate, and 6 is through hole among the figure, and 7 is through-hole wall.
Step S204: etching is carried out in silicon chip side and shady face;
Side and shady face to silicon chip 1 carry out etching, and be shown in figure 12, is the structural representation of silicon chip after the etching, its objective is the emitter junction that forms in silicon chip 1 side when removing diffusion system knot.Shady face to silicon chip 1 carries out etching, and the emitter junction that forms at silicon chip 1 shady face when its objective is diffusion system knot is removed.
The mode of etching adopts wet etching, in embodiments of the present invention, and when etching; Can the side of silicon chip 1 be contacted with chemical liquid phase with shady face; The mode of said contact can for, adopt the shady face of the said silicon chip of HF (hydrogen fluoride) solution impregnation, also can wash the shady face of said silicon chip for adopting said HF (hydrogen fluoride) solution; Perhaps can also adopt the mode of spraying, the mode that present embodiment preferably soaks into is carried out etching.
Step S205 after the etching～step S207 is identical with step 105～step 107 among the embodiment one, repeats no more at this, and the silicon chip that obtains at last, shown in figure 13, there is not emitter junction on the through-hole wall.
The above only is the application's a preferred implementation, makes those skilled in the art can understand or realize the application.Multiple modification to these embodiment will be conspicuous to one skilled in the art, and defined General Principle can realize under the situation of spirit that does not break away from the application or scope in other embodiments among this paper.Therefore, the application will can not be restricted to these embodiment shown in this paper, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (4)
1. a back of the body contact crystalline silicon solar cell comprising piece making method is characterized in that, comprising:
Making herbs into wool, diffusion are carried out in surface at semiconductor chip;
Perforate on said semiconductor chip after the diffusion;
Said semiconductor chip after the perforate is carried out etching;
Doped glass layer after the removal etching on the said semiconductor chip;
Plated film on the sensitive surface of removing said semiconductor chip behind the doped glass layer;
Behind preparation electrode on the said semiconductor chip behind the plated film and back of the body electric field, obtain carrying on the back the contact crystalline silicon solar cell comprising sheet.
2. method according to claim 1 is characterized in that, the process that spreads on the surface of semiconductor chip is:
Single or double to said semiconductor chip spreads.
3. method according to claim 2 is characterized in that, to after the spreading of said semiconductor chip, removes after the etching and also comprises before the doped glass layer on the said semiconductor chip:
Etching is carried out in shady face and side to said semiconductor chip.
4. method according to claim 1 is characterized in that, perforate is on said semiconductor chip after the diffusion:
Adopt laser on said semiconductor chip after the diffusion, to open at least one through hole.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101416218A CN102800744A (en) | 2011-05-27 | 2011-05-27 | Manufacturing method for back contact crystalline silicon solar cell |
| PCT/CN2011/075412 WO2012162899A1 (en) | 2011-05-27 | 2011-06-07 | Fabrication method for back-contacted crystalline silicon solar cell |
| US13/193,470 US9153713B2 (en) | 2011-04-02 | 2011-07-28 | Solar cell modules and methods of manufacturing the same |
| US13/193,458 US8916410B2 (en) | 2011-05-27 | 2011-07-28 | Methods of manufacturing light to current converter devices |
| US13/193,433 US9281435B2 (en) | 2011-05-27 | 2011-07-28 | Light to current converter devices and methods of manufacturing the same |
| US14/517,697 US9209342B2 (en) | 2011-05-27 | 2014-10-17 | Methods of manufacturing light to current converter devices |
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| CN101088159A (en) * | 2004-09-07 | 2007-12-12 | 日出能源公司 | Process and fabrication methods for emitter wrap through back contact solar cells |
| JP2008300440A (en) * | 2007-05-29 | 2008-12-11 | Sanyo Electric Co Ltd | Solar cell, and solar cell module |
| JP2010262951A (en) * | 2009-04-29 | 2010-11-18 | Mitsubishi Electric Corp | Solar cell and method of manufacturing the same |
| CN102208486A (en) * | 2011-04-18 | 2011-10-05 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of MWT (Metal Wrap Through) solar cell |
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| US4838952A (en) * | 1988-04-29 | 1989-06-13 | Spectrolab, Inc. | Controlled reflectance solar cell |
| US7170001B2 (en) * | 2003-06-26 | 2007-01-30 | Advent Solar, Inc. | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
| JP2009088406A (en) * | 2007-10-02 | 2009-04-23 | Sanyo Electric Co Ltd | Solar battery and its production process |
| KR101404010B1 (en) * | 2008-03-06 | 2014-06-12 | 주성엔지니어링(주) | Etcher of substrate edge and method of etching substrate edge |
| NL2004310C2 (en) * | 2010-02-26 | 2011-08-30 | Stichting Energie | Method of fabrication of a back-contacted photovoltaic cell, and back-contacted photovoltaic cell made by such a method. |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101088159A (en) * | 2004-09-07 | 2007-12-12 | 日出能源公司 | Process and fabrication methods for emitter wrap through back contact solar cells |
| JP2008300440A (en) * | 2007-05-29 | 2008-12-11 | Sanyo Electric Co Ltd | Solar cell, and solar cell module |
| JP2010262951A (en) * | 2009-04-29 | 2010-11-18 | Mitsubishi Electric Corp | Solar cell and method of manufacturing the same |
| CN102208486A (en) * | 2011-04-18 | 2011-10-05 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of MWT (Metal Wrap Through) solar cell |
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