CN102800627A - Method for producing electronic programmable fuse device - Google Patents
Method for producing electronic programmable fuse device Download PDFInfo
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- CN102800627A CN102800627A CN2012103352639A CN201210335263A CN102800627A CN 102800627 A CN102800627 A CN 102800627A CN 2012103352639 A CN2012103352639 A CN 2012103352639A CN 201210335263 A CN201210335263 A CN 201210335263A CN 102800627 A CN102800627 A CN 102800627A
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- programmable fuse
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Abstract
A method for producing an electronic programmable fuse device comprises the steps that: a device area is divided into a non-electronic programmable fuse area and an electronic programmable fuse area, and is used for increasing the typical size of a photoetching plate; first photoetching is carried out on the non-electronic programmable fuse area, wherein a first preset exposure dose is adopted during the first photoetching; and second photoetching is carried out on the electronic programmable fuse area through adopting the processed photoetching plate, wherein a second preset exposure dose is adopted during the second photoetching, the second preset exposure dose is higher than the first preset exposure dose, and the typical size of the processed photoetching plate is increased, so that the typical size loss which is caused by adopting the second preset exposure dose is compensated. The method adopts the high exposure dose for the electronic programmable fuse area, the typical size of the photoetching plate is corrected for compensating the typical size loss which is caused by the high preset exposure dose, and thus, under the premise of unchanged typical size, the device performance is improved.
Description
Technical field
The present invention relates to semiconductor fabrication process, and be particularly related to electronic programmable fuse-wire device manufacture method.
Background technology
A kind of technology that electronic programmable fuse (electrically programmable fuse, i.e. eFuse) techniques make use metal electro-migration phenomenon grows up, its ability and CMOS technology are compatible, and area is little.Mainly be used as and carry out redundancy, field repair chip, to the chip reprogramming, make the electronic product intellectuality more that becomes.
With reference to figure 1, in common electronic programmable fuse-wire device domain, be connected by polysilicon fuse 1 between electrode 2 and the electrode 3.When between two electrodes in addition during high current, under the effect of higher current density, relevant atom will move along the electron motion direction, forms the cavity, finally opens circuit, and this phenomenon is exactly electromigration (EM) phenomenon.Since polysilicon fuse fusing before with fusing after resistance can change; Usually the resistance after the fusing is 10 ~ 1000 times of the resistance before the fusing; The electronic programmable fuse-wire device utilizes the caused resistance variations of the ELECTROMIGRATION PHENOMENON of polysilicon fuse just, thereby realizes programmable purpose.
The ELECTROMIGRATION PHENOMENON of electronic programmable fuse-wire device and the electric current distribution in the polysilicon fuse are closely related; When the electric current distribution in the polysilicon fuse in the time of inhomogeneous (promptly having current-density gradient); Relevant atom receives the electronics wind behaviour different on two electrode direction; Thereby ELECTROMIGRATION PHENOMENON takes place more easily, make polysilicon fuse fuse more easily.
Summary of the invention
The invention provides a kind of electronic programmable fuse-wire device manufacture method, strengthen the fusing performance of electronic programmable fuse-wire device.
In order to realize above-mentioned technical purpose, the present invention proposes a kind of electronic programmable fuse-wire device manufacture method, comprising: device area is divided into non-electronic programmable fuse zone with electronic programmable fuse zone and reticle is carried out typical sizes increase processing; First photoetching is carried out in said non-electronic programmable fuse zone, wherein, adopted the first predetermined exposure dosage when carrying out said first photoetching; Adopt the reticle of handling that second photoetching is carried out in said electronic programmable fuse zone; Wherein, Adopt the second predetermined exposure dosage when carrying out said second photoetching; The said second predetermined exposure dosage is higher than the said first predetermined exposure dosage, and typical sizes increases in the reticle of said processing, with the loss of compensation owing to the typical sizes that adopts the said second predetermined exposure dosage to be caused.
Optional; Saidly reticle is carried out typical sizes increase to handle and to comprise: adopt the method for typical sizes biasing to increase the typical sizes in the zone of electronic programmable fuse described in the reticle, thereby compensation is because the polysilicon fuse typical sizes loss that the second predetermined exposure dosage is caused.
Optional, also be included in and carry out after first photoetching, form non-electronic programmable fuse region region pattern and after carrying out second photoetching, form electronic programmable fuse region region pattern through follow-up development etching technics through follow-up development etching technics.
Compared to prior art; Electronic programmable fuse-wire device manufacture method of the present invention is taked different conditions of exposures to non-electronic programmable fuse zone with electronic programmable fuse zone respectively; Adopt the high dose conditions of exposure in electronic programmable fuse zone; And the reticle typical sizes in electronic programmable fuse-wire device zone revised to remedy adopt the grandson of the typical sizes that the high dose conditions of exposure brought refined; Thereby keeping under the constant prerequisite of polysilicon fuse typical sizes; Increase the edge roughness of polysilicon fuse, and then increased the current density change in the electronic programmable fuse-wire device, strengthened the fusing performance of electronic programmable fuse-wire device.
Description of drawings
Fig. 1 is conventional electronic programmable fuse-wire device domain sketch map;
Fig. 2 is the schematic flow sheet of a kind of execution mode of electronic programmable fuse-wire device manufacture method of the present invention;
Fig. 3 is for adopting electronic programmable fuse-wire device manufacture method of the present invention formed electronic programmable fuse-wire device domain sketch map afterwards.
Embodiment
To combine specific embodiment and accompanying drawing below, the present invention will be set forth in detail.
With reference to figure 2, the invention provides a kind of electronic programmable fuse-wire device manufacture method, comprising:
Step S1 is divided into non-electronic programmable fuse zone with electronic programmable fuse zone and reticle is carried out typical sizes increase processing with device area;
Step S2 carries out first photoetching to above-mentioned non-electronic programmable fuse zone, wherein, adopts the first predetermined exposure dosage when carrying out said first photoetching;
Step S3; Adopt the reticle of handling that second photoetching is carried out in above-mentioned electronic programmable fuse zone; Wherein, adopt the second predetermined exposure dosage when carrying out said second photoetching, the said second predetermined exposure dosage is higher than the said first predetermined exposure dosage; Typical sizes increases in the reticle of said processing, with the loss of compensation owing to the typical sizes that adopts the said second predetermined exposure dosage to be caused.
The inventor finds through test of many times and practice, because the conditions of exposure when carrying out said second photoetching is higher than the exposure of being adopted when carrying out said first photoetching, causes formed polysilicon fuse edge more coarse.In general; Adopt different exposure doses to carry out first photoetching and second photoetching respectively; Especially high exposure dose is carried out in electronic programmable fuse zone and make public, the edge roughness of formed polysilicon fuse can be increased to by the less than 10% of routine above 30%.
Owing to after improving exposure dose, when increasing the polysilicon fuse edge roughness, also can reduce the typical sizes of polysilicon fuse; Increase processing so in step S1, can carry out typical sizes to reticle earlier; Specifically, can pass through, for example the method for typical sizes biasing; Suitably increase the typical sizes in electronic programmable fuse zone, thereby compensation is owing to improve the loss of typical sizes that exposure dose brings.Wherein, the method that typical sizes is increased processing can be selected according to the compensation rate of typical sizes, and its concrete steps should not impact thinking of the present invention.
In addition, step S2 also can be included in and carry out after said first photoetching, forms non-electronic programmable fuse region region pattern through subsequent technique; Step S3 also can be included in and carry out after said second photoetching, forms electronic programmable fuse region region pattern through subsequent technique.
With reference to figure 3; In a kind of embodiment that adopts electronic programmable fuse-wire device manufacture method of the present invention, after related process such as development etching, in formed electronic programmable fuse-wire device domain; The polysilicon fuse 100 of connection electrode 2 and electrode 3 becomes very coarse; And, increase to handle owing in advance reticle has been carried out typical sizes, make that the typical sizes D of resulting polysilicon fuse remains unchanged in the actual photoetching process.At this moment, when between electrode 2 and electrode 3 in addition during high electric current, the uniformity of current density variation of polysilicon fuse 100, thus strengthened the electric migration performance of electronic programmable fuse, and then strengthened the fusing performance of electronic programmable fuse-wire device.
Compared to prior art; The present invention is in the process of making the electronic programmable fuse-wire device; Device to be made is divided into non-electronic programmable fuse zone and electronic programmable fuse zone; And adopt conditions of exposure successively above-mentioned zones of different to be carried out photoetching with different exposure doses, especially adopt high exposure dose, thereby improve the roughness at polysilicon fuse edge in electronic programmable fuse zone; In addition; In order to compensate owing to the loss of adopting the typical sizes that high exposure dose brought; The present invention also compensates the typical sizes in electronic programmable fuse zone in the reticle in advance; Make keeping under the constant prerequisite of polysilicon fuse typical sizes that it is big that the current density in the electronic programmable fuse-wire device becomes, to strengthen the fusing performance of electronic programmable fuse-wire device.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical scheme of the present invention according to technical spirit of the present invention.
Claims (3)
1. an electronic programmable fuse-wire device manufacture method is characterized in that, comprising:
Device area is divided into non-electronic programmable fuse zone with electronic programmable fuse zone and reticle is carried out typical sizes increase processing;
First photoetching is carried out in said non-electronic programmable fuse zone, wherein, adopted the first predetermined exposure dosage when carrying out said first photoetching;
Adopt the reticle of handling that second photoetching is carried out in said electronic programmable fuse zone; Wherein, Adopt the second predetermined exposure dosage when carrying out said second photoetching; The said second predetermined exposure dosage is higher than the said first predetermined exposure dosage, and typical sizes increases in the reticle of said processing, with the loss of compensation owing to the typical sizes that adopts the said second predetermined exposure dosage to be caused.
2. electronic programmable fuse-wire device manufacture method as claimed in claim 1; It is characterized in that, saidly reticle is carried out typical sizes increase to handle and to comprise: adopt the method for typical sizes biasing to increase the typical sizes in the zone of electronic programmable fuse described in the reticle.
3. electronic programmable fuse-wire device manufacture method as claimed in claim 1; It is characterized in that; Also comprise: after carrying out said first photoetching; Form non-electronic programmable fuse region region pattern through follow-up development etching technics, and after carrying out said second photoetching, form electronic programmable fuse region region pattern through follow-up development etching technics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210335263.9A CN102800627B (en) | 2012-09-11 | 2012-09-11 | Method for producing electronic programmable fuse device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210335263.9A CN102800627B (en) | 2012-09-11 | 2012-09-11 | Method for producing electronic programmable fuse device |
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| Publication Number | Publication Date |
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| CN102800627A true CN102800627A (en) | 2012-11-28 |
| CN102800627B CN102800627B (en) | 2014-08-13 |
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| CN201210335263.9A Active CN102800627B (en) | 2012-09-11 | 2012-09-11 | Method for producing electronic programmable fuse device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6271574B1 (en) * | 1998-05-14 | 2001-08-07 | Stmicroelectronics S.A. | Integrated circuit fuse with localized fusing point |
| US6444503B1 (en) * | 2002-02-07 | 2002-09-03 | Taiwan Semiconductor Manufacturing Company | Fabricating electrical metal fuses without additional masking |
| US20080277757A1 (en) * | 2007-05-09 | 2008-11-13 | Intersil Corporation | Ballasted polycrystalline fuse |
| US20100330783A1 (en) * | 2007-10-26 | 2010-12-30 | International Business Machines Corporation | Electrical fuse having a fully silicided fuselink and enhanced flux divergence |
| CN102136415A (en) * | 2010-01-27 | 2011-07-27 | 中芯国际集成电路制造(上海)有限公司 | Method for improving roughness of line edge of photoetching pattern in semiconductor process |
-
2012
- 2012-09-11 CN CN201210335263.9A patent/CN102800627B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6271574B1 (en) * | 1998-05-14 | 2001-08-07 | Stmicroelectronics S.A. | Integrated circuit fuse with localized fusing point |
| US6444503B1 (en) * | 2002-02-07 | 2002-09-03 | Taiwan Semiconductor Manufacturing Company | Fabricating electrical metal fuses without additional masking |
| US20080277757A1 (en) * | 2007-05-09 | 2008-11-13 | Intersil Corporation | Ballasted polycrystalline fuse |
| US20100330783A1 (en) * | 2007-10-26 | 2010-12-30 | International Business Machines Corporation | Electrical fuse having a fully silicided fuselink and enhanced flux divergence |
| CN102136415A (en) * | 2010-01-27 | 2011-07-27 | 中芯国际集成电路制造(上海)有限公司 | Method for improving roughness of line edge of photoetching pattern in semiconductor process |
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| Publication number | Publication date |
|---|---|
| CN102800627B (en) | 2014-08-13 |
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