CN102798999B - A kind of array base palte cross curve restorative procedure, array base palte and liquid crystal display - Google Patents
A kind of array base palte cross curve restorative procedure, array base palte and liquid crystal display Download PDFInfo
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- CN102798999B CN102798999B CN201210281041.3A CN201210281041A CN102798999B CN 102798999 B CN102798999 B CN 102798999B CN 201210281041 A CN201210281041 A CN 201210281041A CN 102798999 B CN102798999 B CN 102798999B
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Abstract
The invention provides a kind of array base palte cross curve restorative procedure, array base palte and liquid crystal display, relate to the preparation technology field of LCDs, to exist in prior art to solve, the cross curve that data line on array base palte and gate line produce because of short circuit, cause the problem that array base palte is scrapped, the method is respectively on the data line both sides of short circuit, the gate line of the cutting-off of short-circuit, cut off the connection of the one the second thin film transistor (TFT) source electrodes and data line, the one the second thin film transistor (TFT)s lay respectively at shorting data line both sides, and the electric connection point of respective grid and gate line, be positioned at two cut-out point both sides of gate line, the grid of the one the second thin film transistor (TFT)s is electrically connected with respective drain electrode respectively, be electrically connected with two pixel electrodes be electrically connected that drain, gate line and data line location of short circuit is cut off owing to first using after generation is bad, and then the path turn-on grid electrode line made new advances is constructed according to pixel electrode, realize cross curve reparation.
Description
Technical field
The present invention relates to the preparation technology field of LCDs, particularly a kind of array base palte cross curve restorative procedure, array base palte and liquid crystal display.
Background technology
Thin film transistor (TFT) (Thin Film Transistor, TFT) typically refers to the isolated-gate field effect transistor (IGFET) made with semiconductor film material.This device is made up of semiconductive thin film and the insulation course that contacts with one side surface usually, has gate electrode, source electrode and drain electrode.TFT is arranged on array Array substrate, Array substrate as shown in Figure 1, comprise one as the supporting substrate 21 of base material, the conductive gate 26 that substrate 21 is provided with, source electrode 22 and drain electrode 23, electrical isolation gate dielectric 25 and semi-conductive layer 24 form, electrical isolation gate dielectric 25 is by grid 26, 23 to split with source electrode 22 and draining, semi-conductive layer 24 contacts with electrical isolation gate dielectric 26, and 23 to be connected with draining with source electrode 22, source electrode 22 and drain electrode 23 are provided with protective seam 27, protective seam 27 is provided with pixel electrode 28, drain electrode 23 is electrically connected with pixel electrode 28 by via hole.Plated film can be there is or etch bad in TFT LCD Array substrate in the impact of production run kind due to equipment or environment, cause the local short circuit of data Data circuit and grid G ate crossing elimination, then produce cross curve bad, cause this product rejection thus have impact on yield and the cost of finished product.
In prior art, there are the following problems as can be seen here: the cross curve that the data line on array base palte and gate line produce because of short circuit, can cause the problem that array base palte is scrapped.
Summary of the invention
The object of the invention is for exist in prior art, the cross curve that data line on array base palte and gate line produce because of short circuit, the problem that array base palte can be caused to scrap, provides a kind of array base palte cross curve restorative procedure, array base palte and liquid crystal display.
The embodiment of the present invention provides a kind of array base palte cross curve restorative procedure, for repairing the cross curve that data line on array base palte and gate line produce because of short circuit, data line on substrate and gate line, respectively with the source electrode of the thin film transistor (TFT) on array base palte and grid electrical connection, the drain electrode of thin film transistor (TFT) and pixel electrode electrical connection, comprising:
Respectively on the data line both sides of short circuit, the gate line of the cutting-off of short-circuit;
Cut off the electrical connection of the first film transistor source and data line, and second electrical connection of thin film transistor (TFT) source electrode and data line, the first film transistor and the second thin film transistor (TFT) lay respectively at the both sides of the data line of short circuit, and the electric connection point of the gate line of grid and short circuit separately, be positioned at two cut-out point both sides of gate line;
The drain electrode of the grid of the first film transistor and the first film transistor is electrically connected, the grid of the second thin film transistor (TFT) and the drain electrode electrical connection of the second thin film transistor (TFT), by the pixel electrode be electrically connected with the first film transistor drain, be electrically connected to the pixel electrode be electrically connected that to drain with the second thin film transistor (TFT).
Further, the first film transistor and/or the second thin film transistor (TFT) are the thin film transistor (TFT) of next-door neighbour's shorting data line.
Further, by the pixel electrode be electrically connected with the first film transistor drain, be electrically connected by public metal wire, drain the pixel electrode be electrically connected with the second thin film transistor (TFT).
Further, by the pixel electrode be electrically connected with the first film transistor drain, be electrically connected by public metal wire, be specially with the second thin film transistor (TFT) pixel electrode be electrically connected that drains:
By the pixel electrode be electrically connected with the drain electrode of the first film transistor, be electrically connected with public metal wire, by the pixel electrode be electrically connected with the drain electrode of the second thin film transistor (TFT), be electrically connected with public metal wire;
On shorting data line both sides, cut off the public metal wire be electrically connected with pixel electrode respectively, two electric connection points of public metal wire are positioned at, between two cut-out points of public metal wire.
Further, between the data line that two cut-out points of public metal wire are close at shorting data line and shorting data line.
Further, electrically connect as laser bonding, be cut to cut.
The embodiment of the present invention also provides a kind of array base palte, data line on array base palte and gate line short circuit produce cross curve, on the data line both sides of short circuit, the grid open circuit of short circuit, the first film transistor source and data line open circuit, and second thin film transistor (TFT) source electrode and data line open circuit, the first film transistor and the second thin film transistor (TFT) lay respectively at the both sides of shorting data line, and the electric connection point of the gate line of grid and short circuit separately, be positioned at two trip point both sides of gate line, the grid of the first film transistor and the drain electrode electrical connection of the first film transistor, the grid of the second thin film transistor (TFT) and the drain electrode electrical connection of the first film transistor, the pixel electrode be electrically connected with the first film transistor drain, be electrically connected to the pixel electrode be electrically connected that to drain with the second thin film transistor (TFT).
Further, the first film transistor and/or the second thin film transistor (TFT) are the thin film transistor (TFT) of next-door neighbour's shorting data line.
Further, the pixel electrode be electrically connected with the first film transistor drain, is electrically connected by public metal wire, to drain the pixel electrode be electrically connected with the second thin film transistor (TFT).
Further, the pixel electrode be electrically connected with the drain electrode of the first film transistor, be electrically connected with public metal wire, the pixel electrode be electrically connected with the drain electrode of the second thin film transistor (TFT), be electrically connected with public metal wire, on shorting data line both sides, the public metal wire open circuit be electrically connected with pixel electrode, two electric connection points of public metal wire are positioned at, between two trip points of public metal wire.
Further, between the data line that two cut-out points of public metal wire are close at shorting data line and shorting data line.
The embodiment of the present invention also provides a kind of liquid crystal display, and the body of liquid crystal display is provided with array base palte as the aforementioned.
Cut off gate line and data line location of short circuit owing to first using after generation is bad, and then construct the path turn-on grid electrode line made new advances according to pixel electrode, realize cross curve reparation.
Accompanying drawing explanation
Fig. 1 represents array base-plate structure figure of the prior art;
Fig. 2 represents the array base palte cross curve restorative procedure process flow diagram that the embodiment of the present invention provides;
Fig. 3 represents the array base-plate structure figure that the embodiment of the present invention provides.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention will be described, in order to solve the cross curve that data line on array base palte of the prior art and gate line produce because of short circuit, the problem that array base palte is scrapped can be caused, the embodiment of the present invention provides a kind of array base palte cross curve restorative procedure, for repairing the cross curve that data line on array base palte and gate line produce because of short circuit, data line on substrate and gate line, be electrically connected with the source electrode 22 of the thin film transistor (TFT) on array base palte and grid 26 respectively, drain electrode 23 and the pixel electrode 28 of thin film transistor (TFT) are electrically connected, as shown in Figure 2, comprise the steps:
Step 101, respectively on the data line both sides of short circuit, cut off the gate line that connects with this data line short circuit.
Position 1 place of array base palte as shown in Figure 3, Data line 12 (i.e. data line) on array base palte and Gate line 13(and grid line) produce cross curve because of short circuit, next two positions 2 to data line 12 both sides of short circuit, 3 carry out cut (Laser Cut), make two positions 2 on Gate line 13, part between 3 disconnects with this Gate line 13, to reach Data line 12 and Gate line 13 short circuit place isolation, ensures the complete of Data line 12 again simultaneously.Using cut (Laser Cut) as the preferred version cutting off various data cube computation circuit in the present embodiment, be only described as preferred version.Similar using laser bonding as the preferred version carrying out being electrically connected.In the present embodiment, two positions 2 of cut, 3 can be the Data line 12 being close to short circuit, also can be the Data line 12 that the Data line 12 of one of them position next-door neighbour's short circuit or two positions are not close to short circuit, such as position 2 is positioned at the left side of the Data line on the left of the Data line 12 of short circuit, as long as ensure that position 2,3 is just passable on Data line 12 both sides of short circuit.
The electrical connection of step 102, cut-out the first film transistor source and data line, and second electrical connection of thin film transistor (TFT) source electrode and data line, the first film transistor and the second thin film transistor (TFT) lay respectively at the both sides of the data line of short circuit, and the electric connection point of the gate line of grid and short circuit separately, be positioned at two cut-out point both sides of gate line.
Cut is carried out to the source electrode of two TFT positions 4,5, cuts off the source metal circuit of Data layer TFT, to reach the effect of the pixel electrode isolation utilized needed for Data line and structure repairing circuit.In the present embodiment, the source electrode of the first film transistor carries out the position 4 of cut, the source electrode of the second thin film transistor (TFT) carries out the position 5 of cut, need the both sides of the Data line 12 laying respectively at short circuit, the position of the first film transistor gate is position 6, in position 6, there is electric connection point with the Gate line 13 of short circuit, the position of the second thin-film transistor gate is position 7, in position 7, there is electric connection point with the Gate line 13 of short circuit, the first film transistor and the second thin film transistor (TFT) can be the thin film transistor (TFT)s of the Data line 12 of next-door neighbour's short circuit, may not be the thin film transistor (TFT) of next-door neighbour's short circuit Data line 12, such as, be close to Article 1 data line on the left of short circuit Data line 12 on the right side of the first film transistor.A principle is had to be position 2,3 will be positioned at position 6, between 7 electric connection points, namely position 6 electric connection point will on the left side of position 3, position 7 electric connection point will on the right side of position 2, and the grid of the first film transistor need be connected the Gate line 13 of same Gate line and short circuit with the grid of the second thin film transistor (TFT).
Step 103, by the drain electrode of the grid of the first film transistor and the first film transistor electrical connection, the grid of the second thin film transistor (TFT) and the drain electrode electrical connection of the second thin film transistor (TFT), by the pixel electrode be electrically connected with the first film transistor drain, be electrically connected to the pixel electrode be electrically connected that to drain with the second thin film transistor (TFT).
Cut is carried out to two positions 8,11, cuts off the public COM metal wire 14 of Data layer, to reach the effect of the COM metal wire isolation utilized needed for structure repairing circuit, thus intercept one section of COM metal wire as repairing circuit.Respectively to four positions 6,7,9,10 carry out laser bonding, connect TFT Gate grid layer metal and drain D rain layer metal (namely draining) respectively, namely carry out laser bonding at position 6 electric connection point of the first film transistor gate, connect the first film transistor sites 6 place drain D rain layer metal, position 7 electric connection point of the second thin-film transistor gate carries out laser bonding, connects the second thin film transistor (TFT) position 7 place drain D rain layer metal.And connect COM metal wire and ITO layer metal, position 10 is the ITO layer metal 14 of the drain electrode electrical connection of the first film transistor positions mutual with COM electrode 15, and position 9 is the mutual positions of the ITO layer metal 16 that be electrically connected in the drain electrode of the second thin film transistor (TFT) and COM electrode 15.Be reached through laser welding technology formed as underpass: by Gate line 13 to ITO layer metal 14(and pixel electrode) to intercepting COM circuit 15 again to ITO layer metal 16 to Gate line 13.Cut-off Gate circuit conducting again in the 101st step can be made by this path, thus reach the effect of being repaired by cross curve.
The first film transistor described above and the second thin film transistor (TFT), it can be the thin film transistor (TFT) of next-door neighbour's shorting data line, may not be the thin film transistor (TFT) of next-door neighbour's shorting data line, two positions 9,10 should be positioned at two positions 8, between 11, while utility COM layer metal carry out repairing, COM circuit can not had an impact like this.
Except utilizing except COM layer metal repair, other metal level also can be adopted to repair, by the ITO layer metal be electrically connected with the first film transistor drain, being electrically connected to the ITO layer metal be electrically connected that to drain with the second thin film transistor (TFT).
The embodiment of the present invention also provides a kind of array base palte, array base palte is prepared from by aforesaid restorative procedure, Data line 12 on array base palte and Gate line 13 short circuit produce cross curve, on data line 12 both sides of short circuit, Gate line 13 open circuit of short circuit, the first film transistor source and data line open circuit, and second thin film transistor (TFT) source electrode and data line open circuit, the first film transistor and the second thin film transistor (TFT) lay respectively at the both sides of short circuit Data line 12, and the electric connection point of the Gate line 13 of grid and short circuit separately, be positioned at two trip point both sides of Gate line, the grid of the first film transistor and the drain electrode electrical connection of the first film transistor, the grid of the second thin film transistor (TFT) and the drain electrode electrical connection of the second thin film transistor (TFT), the pixel electrode 14 be electrically connected with the first film transistor drain, be electrically connected to the pixel electrode 16 be electrically connected that to drain with the second thin film transistor (TFT).
Specifically, the first film transistor and/or the second thin film transistor (TFT), it can be the thin film transistor (TFT) of next-door neighbour's short circuit Data line, can for not being close to the thin film transistor (TFT) of short circuit Data line yet, the grid of the first film transistor is connected the Gate line 13 of same Gate line and short circuit with the grid of the second thin film transistor (TFT).
The pixel electrode 14 be electrically connected with the first film transistor drain, is electrically connected by public metal wire, to drain the pixel electrode 16 be electrically connected with the second thin film transistor (TFT).When realizing can be, the pixel electrode 14 be electrically connected with the drain electrode of the first film transistor, be electrically connected with public metal wire 15, the pixel electrode 16 be electrically connected with the drain electrode of the second thin film transistor (TFT), also be electrically connected with public metal wire 15, such pixel electrode 14 and pixel electrode 16 achieve electrical connection, on short circuit Data line both sides, public metal wire 15 open circuit be electrically connected with pixel electrode, two electric connection points 9,10 of public metal wire 15 are positioned at, between two trip points 8,15 of public metal wire 15.
Between the data line that two cut-out points 8,15 of public metal wire are close at short circuit Data line and short circuit Data line.
The embodiment of the present invention also provides a kind of liquid crystal display, and the body of liquid crystal display is provided with array base palte as the aforementioned.
It is last it is noted that above embodiment is only in order to illustrate technical scheme of the present invention but not to be limited, although with reference to preferred embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to technical scheme of the present invention or equivalent replacement, and these are revised or be equal to the spirit and scope that replacement also can not make amended technical scheme disengaging technical solution of the present invention.
Claims (10)
1. an array base palte cross curve restorative procedure, for repairing the cross curve that data line on array base palte and gate line produce because of short circuit, data line on substrate and gate line, respectively with the source electrode of the thin film transistor (TFT) on array base palte and grid electrical connection, the drain electrode of thin film transistor (TFT) and pixel electrode electrical connection, it is characterized in that, comprising:
Respectively on the data line both sides of short circuit, the gate line of the cutting-off of short-circuit;
Cut off the electrical connection of the first film transistor source and data line, and second electrical connection of thin film transistor (TFT) source electrode and data line, the first film transistor and the second thin film transistor (TFT) lay respectively at the both sides of the data line of short circuit, and the electric connection point of the gate line of grid and short circuit separately, be positioned at two cut-out point both sides of gate line;
The drain electrode of the grid of the first film transistor and the first film transistor is electrically connected, the grid of the second thin film transistor (TFT) and the drain electrode electrical connection of the second thin film transistor (TFT), by the pixel electrode be electrically connected with the first film transistor drain, be electrically connected to the pixel electrode be electrically connected that to drain with the second thin film transistor (TFT), by the pixel electrode be electrically connected with the first film transistor drain, be electrically connected by public metal wire, drain the pixel electrode be electrically connected with the second thin film transistor (TFT).
2. method according to claim 1, is characterized in that, the first film transistor and/or the second thin film transistor (TFT), is the thin film transistor (TFT) of next-door neighbour's shorting data line.
3. method according to claim 1, is characterized in that, by the pixel electrode be electrically connected with the first film transistor drain, is electrically connected by public metal wire, is specially with the second thin film transistor (TFT) pixel electrode be electrically connected that drains:
By the pixel electrode be electrically connected with the drain electrode of the first film transistor, be electrically connected with public metal wire, by the pixel electrode be electrically connected with the drain electrode of the second thin film transistor (TFT), be electrically connected with public metal wire;
On shorting data line both sides, cut off the public metal wire be electrically connected with pixel electrode respectively, two electric connection points of public metal wire are positioned at, between two cut-out points of public metal wire.
4. method according to claim 3, is characterized in that, between the data line that two cut-out points of public metal wire are close at shorting data line and shorting data line.
5. method according to claim 1, is characterized in that, electrically connects as laser bonding, is cut to cut.
6. an array base palte, is characterized in that, the data line on array base palte and gate line short circuit produce cross curve, it is characterized in that, on the data line both sides of short circuit, and the grid open circuit of short circuit,
The first film transistor source and data line open circuit, and second thin film transistor (TFT) source electrode and data line open circuit, the first film transistor and the second thin film transistor (TFT) lay respectively at the both sides of shorting data line, and the electric connection point of the gate line of grid and short circuit separately, be positioned at two trip point both sides of gate line, the grid of the first film transistor and the drain electrode electrical connection of the first film transistor, the grid of the second thin film transistor (TFT) and the drain electrode electrical connection of the second thin film transistor (TFT), the pixel electrode be electrically connected with the first film transistor drain, be electrically connected to the pixel electrode be electrically connected that to drain with the second thin film transistor (TFT), the pixel electrode be electrically connected with the first film transistor drain, be electrically connected by public metal wire, to drain the pixel electrode be electrically connected with the second thin film transistor (TFT).
7. array base palte according to claim 6, is characterized in that, the first film transistor and/or the second thin film transistor (TFT), is the thin film transistor (TFT) of next-door neighbour's shorting data line.
8. array base palte according to claim 6, it is characterized in that, the pixel electrode be electrically connected with the drain electrode of the first film transistor, be electrically connected with public metal wire, the pixel electrode be electrically connected with the drain electrode of the second thin film transistor (TFT), be electrically connected with public metal wire, on shorting data line both sides, the public metal wire open circuit be electrically connected with pixel electrode, two electric connection points of public metal wire are positioned at, between two trip points of public metal wire.
9. array base palte according to claim 8, is characterized in that, between the data line that two cut-out points of public metal wire are close at shorting data line and shorting data line.
10. a liquid crystal display, is characterized in that, the body of liquid crystal display is provided with the array base palte as described in claim 6-9.
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| CN201210281041.3A CN102798999B (en) | 2012-08-08 | 2012-08-08 | A kind of array base palte cross curve restorative procedure, array base palte and liquid crystal display |
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| US20160351548A1 (en) * | 2015-05-28 | 2016-12-01 | Mikro Mesa Technology Co., Ltd. | Light emitting diode display device and manufacturing method thereof |
| CN108957804B (en) * | 2018-07-27 | 2021-05-14 | 京东方科技集团股份有限公司 | Array substrate and maintenance method thereof, display panel and display device |
| CN110531542B (en) | 2018-10-26 | 2021-08-10 | 合肥京东方显示技术有限公司 | Method for repairing grid line open circuit and grid line and data line short circuit and display device |
| CN110133927A (en) * | 2019-04-30 | 2019-08-16 | 深圳市华星光电半导体显示技术有限公司 | Display panel and its restorative procedure |
| CN110764328B (en) * | 2019-10-28 | 2022-06-14 | 合肥京东方显示技术有限公司 | Display substrate, maintenance method thereof and display device |
| CN111403311B (en) * | 2020-04-07 | 2022-12-06 | 深圳市华星光电半导体显示技术有限公司 | GOA circuit, display panel and repairing method |
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| CN1959961A (en) * | 2005-11-02 | 2007-05-09 | 群康科技(深圳)有限公司 | Method for repairing base plate of thin film transistor |
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