CN102798613B - Loop mirror-based channel type waveguide reflective index sensor - Google Patents
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- CN102798613B CN102798613B CN201210325147.9A CN201210325147A CN102798613B CN 102798613 B CN102798613 B CN 102798613B CN 201210325147 A CN201210325147 A CN 201210325147A CN 102798613 B CN102798613 B CN 102798613B
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- 239000000463 material Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000835 fiber Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 4
- 230000010287 polarization Effects 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 238000001259 photo etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 239000012491 analyte Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
技术领域 technical field
本发明涉及光电子技术领域，具体涉及一种基于环路镜的槽型波导折射率传感器。 The invention relates to the field of optoelectronic technology, in particular to a groove-type waveguide refractive index sensor based on a loop mirror.
背景技术 Background technique
由于半导体工业，尤其是硅基加工技术的飞速发展，工作在通讯波段的纳米量级精度、厘米量级尺寸的器件已经成为可能。硅-绝缘体（silicon-on-insulator, SOI）这种物质体系非常适合被动器件的集成并且有可能成为未来硅基工业的主流发展方向。在过去的这些年中，许多SOI器件已经被实现，它们包括分束器、滤波器、调制器和传感器等等。而这些器件都是基于不同的波导体系，其中令人瞩目的就是槽型波导。槽型波导可以将光束缚在低折射率的材料中。就是由于槽型波导的这种对光的束缚性质导致其有较大的双折射，这种性质也得到了一定的应用，例如，光学延迟线、非线性位相匹配等等。并且由于这种奇特的性质，槽型波导也被研究者们应用到其他物质体系中，例如光纤、氮化硅/二氧化硅混合体系。 Due to the rapid development of the semiconductor industry, especially silicon-based processing technology, devices with nanometer-level precision and centimeter-level dimensions working in the communication band have become possible. The silicon-on-insulator (SOI) material system is very suitable for the integration of passive devices and may become the mainstream development direction of the silicon-based industry in the future. Over the past few years, many SOI devices have been realized, including beam splitters, filters, modulators, and sensors, among others. These devices are all based on different waveguide systems, the most notable of which is the slot waveguide. Slot waveguides can trap light beams in low-index materials. It is because of the confinement properties of the light of the slot waveguide that it has a large birefringence, and this property has also been used in certain applications, such as optical delay lines, nonlinear phase matching, and so on. And because of this peculiar property, the slot waveguide has also been applied to other material systems by researchers, such as optical fibers, silicon nitride/silicon dioxide hybrid systems.
另一方面，包含有高双折射光纤的环路镜是光纤通讯和传感的研究热点。它们被广泛应用于波分复用器、掺铒光纤放大器的增益平坦化、多波长激光器、色散剪裁、光纤陀螺、应力和温度传感等等领域。 On the other hand, loop mirrors containing highly birefringent fibers are a research hotspot in fiber optic communication and sensing. They are widely used in wavelength division multiplexers, gain flattening of Erbium-doped fiber amplifiers, multi-wavelength lasers, dispersion tailoring, fiber optic gyroscopes, stress and temperature sensing, and more.
发明内容 Contents of the invention
本发明提出了一种基于环路镜的槽型波导折射率传感器，通过将环路镜和槽型波导结合，可以获得极高的双折射。 The invention proposes a slot-type waveguide refractive index sensor based on a loop mirror, which can obtain extremely high birefringence by combining the loop mirror and the slot-type waveguide.
为了实现上述发明目的，本发明采用的技术方案如下： In order to realize the foregoing invention object, the technical scheme that the present invention adopts is as follows:
一种基于环路镜的槽型波导折射率传感器，由衬底层和波导层组成，波导层包括输入端、光纤环路镜和输出端，所述光纤环路镜由定向耦合器和与定向耦合器两输出端口连接的波导环组成；所述波导环由脊型波导和槽型波导连接构成；通过所述输入端的光经过定向耦合器分成两路光进入所述波导环，所述两路光经过波导环的槽型波导后偏振发生旋转，并再次通过定向耦合器后，一部分光被输出端接收。 A groove-type waveguide refractive index sensor based on a loop mirror, consisting of a substrate layer and a waveguide layer, the waveguide layer includes an input end, an optical fiber loop mirror and an output end, and the optical fiber loop mirror is composed of a directional coupler and a directional coupling The waveguide ring is composed of a waveguide ring connected to the two output ports of the device; the waveguide ring is composed of a ridge waveguide and a groove waveguide; After passing through the slot waveguide of the waveguide ring, the polarization is rotated, and after passing through the directional coupler again, a part of the light is received by the output end.
进一步地，所述定向耦合器对信号的耦合系数为50:50。 Further, the coupling coefficient of the directional coupler to the signal is 50:50.
进一步地，所述衬底层的材料为二氧化硅或者氟化镁的低折射率材料，所述波导层为硅或铌酸锂的高折射率材料。 Further, the material of the substrate layer is a low refractive index material of silicon dioxide or magnesium fluoride, and the waveguide layer is a high refractive index material of silicon or lithium niobate.
进一步地，所述槽型波导的槽型区域的长度为几十到几百微米。 Further, the length of the slot region of the slot waveguide is tens to hundreds of microns.
进一步地，所述传感器的工作波段为C+L通讯波段，其测量的折射率范围为1-3，被测量的物体为气体或者液体。 Further, the operating band of the sensor is the C+L communication band, the range of the measured refractive index is 1-3, and the measured object is gas or liquid.
本发明通过将高双折射的槽型波导集成在环路镜中，形成了折射率灵敏度高达103nm/RIU的传感器。与现有技术相比，本发明的显著优点是：（1）所形成的传感器具有极高的双折射，达到10-1，可以大大减小传感器的尺寸；（2）相比于单纯利用消逝场的折射率传感器，该器件灵敏度高一个数量级；（3）可利用传统的硅基光刻工艺批量生产该传感器，制作成本低廉。 The invention forms a sensor with a refractive index sensitivity as high as 10 3 nm/RIU by integrating a high birefringence slot waveguide into a loop mirror. Compared with the prior art, the significant advantages of the present invention are: (1) the formed sensor has a very high birefringence, reaching 10 -1 , which can greatly reduce the size of the sensor; (2) compared with simply using evanescent Field refractive index sensor, the sensitivity of the device is an order of magnitude higher; (3) The sensor can be mass-produced by traditional silicon-based photolithography process, and the production cost is low.
附图说明 Description of drawings
下面结合附图和具体实施方式对本发明做更进一步的具体说明，以使本发明的优点得以清楚展现。 The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, so that the advantages of the present invention can be clearly demonstrated.
图1为本发明基于环路镜的槽型波导折射率传感器的示意图。 FIG. 1 is a schematic diagram of a slot-type waveguide refractive index sensor based on a loop mirror according to the present invention.
图2为理论计算的槽型波导的截面示意图和光场图。 Fig. 2 is a cross-sectional schematic diagram and an optical field diagram of a theoretically calculated slot waveguide.
图3为不同槽宽和槽高情况下，本发明的槽型波导在（a）空气和（b）水中的双折射。 Fig. 3 shows the birefringence of the slot waveguide of the present invention in (a) air and (b) water under different slot widths and slot heights.
图4为不同槽宽和槽高情况下，本发明的槽型波导在（a）空气和（b）水中的折射率传感灵敏度。 Fig. 4 shows the refractive index sensing sensitivity of the slot waveguide of the present invention in (a) air and (b) water under different slot widths and slot heights.
具体实施方式 Detailed ways
本发明的传感器结构示意图如图1所示：端口A为光的输入端，端口B为光的输出端，衬底层采用二氧化硅材料，波导层材料采用硅。通过端口A输入的光经过路径1进入50:50的定向耦合器，分别有50%的光经由路径3（顺时针）和路径4（逆时针）进入环路镜。这两路光经过槽型波导区域后偏振发生旋转并再次经由路径3和路径4通过定向耦合器后部分光通过路径2被端口B接收。槽型波导的槽型区域的长度L可以为几十到几百微米。 The structural diagram of the sensor of the present invention is shown in Figure 1: Port A is the light input end, port B is the light output end, the substrate layer is made of silicon dioxide material, and the waveguide layer material is made of silicon. The light input through port A enters the 50:50 directional coupler through path 1, and 50% of the light enters the loop mirror through path 3 (clockwise) and path 4 (counterclockwise). After the two paths of light pass through the groove waveguide region, the polarization is rotated and pass through the directional coupler through path 3 and path 4 again, and part of the light is received by port B through path 2. The length L of the slot region of the slot waveguide may be tens to hundreds of microns.
图2为用有限元方法计算的槽型波导准横电基模的光场分布图，具体参数为：槽宽= 50nm，槽深= 400nm，脊宽= 200nm，计算波长为1550nm，白色箭头指示了偏振方向。 Figure 2 is the optical field distribution diagram of the quasi-transverse electric fundamental mode of the groove waveguide calculated by the finite element method. The specific parameters are: groove width = 50nm, groove depth = 400nm, ridge width = 200nm, and the calculated wavelength is 1550nm, indicated by the white arrow the direction of polarization.
图3为用有限元方法计算的槽型波导在不同槽宽和槽深下的双折射，双折射为槽型波导准横磁基模与准横电基模的有效折射率之差，计算波长为1550nm。 Figure 3 shows the birefringence of the slot waveguide under different slot widths and slot depths calculated by the finite element method. 1550nm.
图4为用有限元方法计算的槽型波导在不同槽宽和槽深下的灵敏度，所用计算公式为: ，其中计算波长λ0为1550nm，nanalyte为被分析物的折射率，B为双折射。 Figure 4 shows the sensitivity of the slotted waveguide under different slot widths and slot depths calculated by the finite element method. The calculation formula used is: , where the calculated wavelength λ 0 is 1550nm, n analyte is the refractive index of the analyte, and B is the birefringence.
本发明提出了一种利用微光纤制作新型高双折射器件的方法。该传感器的槽型波导具有很高的双折射（10-1量级）并且利用其双折射获得的灵敏度比单纯利用消逝场获得的灵敏度高一个数量级，达到了103nm/RIU量级。该高双折射器件在物联网、光纤传感、集成光学等领域有着广泛的应用。 The invention proposes a method for making a novel high birefringence device by using a micro-optical fiber. The sensor's slot waveguide has very high birefringence (10 -1 order) and the sensitivity obtained by using its birefringence is an order of magnitude higher than that obtained by simply using the evanescent field, reaching the order of 10 3 nm/RIU. The high birefringence device has a wide range of applications in the Internet of Things, fiber optic sensing, integrated optics and other fields.
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