CN102792170A - Physical quantity sensor - Google Patents
Physical quantity sensor Download PDFInfo
- Publication number
- CN102792170A CN102792170A CN201180012940.7A CN201180012940A CN102792170A CN 102792170 A CN102792170 A CN 102792170A CN 201180012940 A CN201180012940 A CN 201180012940A CN 102792170 A CN102792170 A CN 102792170A
- Authority
- CN
- China
- Prior art keywords
- electrode layer
- jut
- stationary electrode
- opposed
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0051—For defining the movement, i.e. structures that guide or limit the movement of an element
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0837—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being suspended so as to only allow movement perpendicular to the plane of the substrate, i.e. z-axis sensor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
Abstract
In particulart, the invention aims to provide a physical quantity sensor that can control electrical shorts between a mobile section, i.e., a mobile electrode and a fixed electrode layer. The physical quantity sensor comprises: a substrate having an anchor section (29) and a mobile section (34) that is supported by the anchor section with a spring section therebetween in a manner so as to be displaceable in the height direction; a facing section (20) that faces the substrate in the height direction and affixes/supports the anchor section, and that faces the mobile section leaving a gap therebetween in the height direction; a projecting section (23) the surface of which, along with the fixed electrode layer (28) formed on the surface of the facing section, is a stopper surface with respect to the mobile section; a fixed support section (22) provided to the surface of the facing section; and a joining section (26) comprising metal layers that join between the fixed support section and the anchor section. The projecting section (23) protrudes from the surface of the facing section (20), and the fixed electrode layer (28) is disposed at the surface of the indented facing section. The surface of the projecting section (23) protrudes more in the height direction than the surface of the fixed electrode layer (28) does.
Description
Technical field
The present invention relates to thereby the addendum modification from the movable part of formation such as silicon substrate cuts off is detected the physical quantity transducer that can measure from the physical quantitys such as acceleration of external action.
Background technology
For example; Physical quantity transducer shown in the patent documentation 1 constitute have along short transverse can displacement movable part and vacate the stationary electrode layer of compartment of terrain configuration with respect to movable part along short transverse, and according to the electrostatic capacitance change detection physical quantity of movable part (playing a role) and fixed electorde interlayer as the movable electrode layer.
In the physical quantity transducer of this structure, the comparative example relative with the present invention shown in figure 10 is such, in order to improve the anti-stickability of movable part 1, forms jut 4 at opposed 3 the surperficial 3a that possesses stationary electrode layer 2.Need to prove that Figure 10 is the figure of the longitudinal profile of the state after the mode with synoptic diagram shows base material 9 with movable part 1 grade that constitutes physical quantity transducer and relative with base material 9 opposed 3 is separated up and down.
Shown in figure 10, opposed 3 surperficial 3a is provided with the fixed bearing portion 5 of outstanding shape.The last first connection metal level 6 that is formed with of 5a on the surface of fixed bearing portion 5 (upper surface).
On the other hand, the movable part 1 that has anchor portion 7 and link with opposed 3 base material relative on short transverse 9 via spring portion 8 and anchor portion 7.Shown in figure 10, movable part 1 is positioned at and stationary electrode layer 2 and jut 4 opposed position.Shown in figure 10, the surface of anchor portion 7 (lower surface) is provided with second and connects metal level 10.First connects metal level 6 is connected 10 of metal levels through engaging adding to depress to heat with second.
Shown in figure 10, between movable part 1 and jut 4, be formed with gap A.In addition, between movable part 1 and stationary electrode layer 2, be formed with gap B.Need to prove that gap A shown in Figure 10, B illustrate with opposed 3 state that separates with base material 9, still, in fact gap A, B are stipulated with the first connection metal level 6 is connected 10 joints of metal level with second state.
Technical literature formerly
Patent documentation
Patent documentation 1: TOHKEMY 2005-283393 communique
Patent documentation 2: TOHKEMY 2008-197113 communique
Patent documentation 3: japanese kokai publication hei 9-127151 communique
The summary of invention
The problem that invention will solve
In the comparative example relative with the present invention shown in Figure 10, the height of the surperficial 2a of stationary electrode layer 2 is positioned at the equal above position of height of the surperficial 4a of jut 4.In this case, movable part 1 is to the displacement of the below of Figure 10, with as the surperficial 4a butt of the jut 4 of confined planes in also easily and the surperficial 2a butt of stationary electrode layer 2.Therefore, 2 danger that have electrical short of movable part 1 and stationary electrode layer.
In addition, in comparative example shown in Figure 10, stationary electrode layer 2 be formed at opposed 3 the surperficial 5a of fixed bearing portion 5 on first connect in the identical operation of metal level 6 and form.Therefore, stationary electrode layer 2 is connected metal level 6 and forms with equal thickness with first.First connects metal level 6 in order to ensure the good bond property that is connected metal level 10 with second, forms with to a certain degree thick thickness.Therefore, stationary electrode layer 2 also forms with thicker thickness.For example stationary electrode layer 2 is Al.If so form thicker Al layer, then, on the surperficial 2a of stationary electrode layer 2, form and heave 11, and the Film Thickness Ratio film forming step of stationary electrode layer 2 is thicker through be connected the thermal treatment of the joint operation of 10 of metal levels with second based on the first connection metal level 6.Therefore, 2 easy all the more electrical shorts of movable part 1 and stationary electrode layer.
Summary of the invention
Therefore, the present invention is used to solve above-mentioned problem in the past, and its purpose especially is to provide the physical quantity transducer of the electrical short that can suppress movable part (movable electrode) and fixed electorde interlayer.
Be used to solve the means of problem
Physical quantity transducer of the present invention is characterised in that, constitutes to have: base material, and it has anchor portion and on said anchor portion, is supported to via spring portion can be along the movable part of short transverse displacement; Opposed portion, itself and said base material be the opposed and said anchor portion of fixed bearing on short transverse, and on short transverse, to vacate the compartment of terrain opposed with said movable part; Stationary electrode layer, it is formed on said opposed and the opposed surface of said movable part; Jut, its surface is the confined planes spacing to said movable part; Fixed bearing portion, it is arranged on said opposed and the opposed surface of said anchor portion; The junction surface, it is by constituting the metal level that engages between said fixed bearing portion and said anchor portion,
Said jut is outstanding from said opposed surface, on said opposed the surperficial recessed surface than said jut, disposes said stationary electrode layer, and the surface of the said stationary electrode layer of surface ratio of said jut is outstanding on short transverse.
Thus, can suitably suppress movable part and the electrical short of fixed electorde interlayer of movable part with the time as the surperficial butt of the jut of confined planes.
In the present invention, it is outstanding on short transverse to be preferably formed the surface of the said stationary electrode layer of surface ratio of said fixed bearing portion at said junction surface.
In addition; In the present invention; Said junction surface will be will first connecting second being connected the mode that metal interlevel engages and constituting of forming on metal level and the surface in said anchor portion what form on the surface of said fixed bearing portion, and the thickness of said stationary electrode layer forms forr a short time than the thickness of the said first connection metal level.Thus, even carry out first thermal treatment that connects in metal level is connected metal interlevel with second the joint operation, also can prevent to generate on the surface of stationary electrode layer and heave.The electrical short that therefore, can more effectively suppress movable part and fixed electorde interlayer.
In addition, in said structure, be preferably formed said first connect the said fixed bearing portion of metal level the surface be formed on the surperficial identical height and position with said jut.Thus, the interval that can suitably be adjusted on the short transverse between stationary electrode layer and movable part remains unchanged, and the interval on the short transverse between jut and movable part is enlarged.Thus, the addendum modification of movable part can be increased, thereby anti-adhesive raising can be realized.
In addition, in the present invention, the Film Thickness Ratio of preferred said stationary electrode layer is little to the interval on the surface height direction of stationary electrode layer from the surface of jut.Thus, even the effect that changes because of stronger physical quantity etc. make the further flexural deformation of movable part and jut butt, also can suitably prevent as the movable part of movable electrode and the electrical short of fixed electorde interlayer.
The invention effect
According to structure of the present invention, can suitably suppress movable part and the electrical short of fixed electorde interlayer of movable part (movable electrode) with the time as the surperficial butt of the jut of confined planes.
Description of drawings
Fig. 1 is the synoptic diagram of longitudinal profile of the physical quantity transducer of expression first embodiment of the present invention.
Fig. 2 is the synoptic diagram of longitudinal profile of the physical quantity transducer of expression second embodiment of the present invention.
Fig. 3 is the synoptic diagram of longitudinal profile of the physical quantity transducer of expression the 3rd embodiment of the present invention.
Fig. 4 is that expression can be suitable for the longitudinal sectional drawing of Fig. 1 to the structure of the more concrete physical quantity transducer of embodiment shown in Figure 3.
Fig. 5 is that expression can be suitable for the longitudinal sectional drawing of Fig. 1 to the structure of the more concrete physical quantity transducer of embodiment shown in Figure 3.
Fig. 6 is the stereographic map of the static state of the physical quantity transducer of presentation graphs 5.
Fig. 7 is the stereographic map of state of the physical quantity transducer action of presentation graphs 5.
Fig. 8 is the stereographic map of state of the physical quantity transducer action of presentation graphs 5.
Fig. 9 is the local enlarged elevation figure that expression is arranged on the state of shank and movable part and jut butt on the physical quantity transducer of Fig. 5.
Figure 10 is the synoptic diagram of longitudinal profile of the physical quantity transducer of the expression comparative example relative with the present invention.
Embodiment
Fig. 1 is the synoptic diagram of longitudinal profile of the physical quantity transducer of expression first embodiment of the present invention; Fig. 2 is the synoptic diagram of longitudinal profile of the physical quantity transducer of expression second embodiment of the present invention, and Fig. 3 is the synoptic diagram of longitudinal profile of the physical quantity transducer of expression the 3rd embodiment of the present invention.Each figure illustrates first base material 21 opposed 20 with the downside that is positioned at first base material 21 discretely.
In embodiment shown in Figure 1, on opposed 20 surface (with first base material, 21 opposed opposed faces; Upper surface) last outstanding be formed with fixed bearing portion 22 and jut 23 of 20a.The surperficial 23a of jut 23 constitutes the confined planes with respect to movable part 34.Surface 23a is meant the face that on jut 22, is positioned at the extreme higher position.As shown in Figure 1, the highest surperficial 22a of fixed bearing portion 22 and the surperficial 23a of jut 23 form sustained height.As shown in Figure 1, in fixed bearing portion 22, be formed with the surperficial 22b that specific surface 22a hangs down a section.This surface 22b and low one section the surperficial 23b that is arranged on the jut 23 are sustained height.
As shown in Figure 1, on the surperficial 22b of fixed bearing portion 22, be formed with first and connect metal level 24 through known methods such as sputters.For example, the first connection metal level 24 is formed by Al or Al alloy (AlCu, AlSiCu, AlSi, AlScCu etc.).In addition, can connect first and form on the lower surface of metal level 24 as the Ti layer of substrate or Ta layer etc.In addition, can first connect form on the surface of metal level 24 with after state second is connected metal level 25 same materials (for example Ge) than the superficial layer that approaches.
Shown in Figure 1 opposed 20 constitutes the insulation course that on the surface of for example Si base material, is formed with monox or silicon nitride etc.Opposed 20 surperficial 20a is the surface of said insulation course, utilizes etching that the surface of insulation course is formed concaveconvex shape.
As shown in Figure 1, become recess 27 between fixed bearing portion 22 and the jut 23, on the surperficial 27a of recess 27, be formed with stationary electrode layer 28.Stationary electrode layer 28 forms with the known method of sputter etc.As shown in Figure 1, the surperficial 28a of stationary electrode layer 28 is forming than the surperficial 23a of jut 23 and the low position of surperficial 22a, 22b of fixed bearing portion 22.
As shown in Figure 1, first base material 21 that is positioned at opposed 20 top constitutes to have: anchor portion 29, anchor portion 29 be supported to via spring portion 30 on short transverse (Z) can displacement movable part 34.
As shown in Figure 1, on the surface of anchor portion 29 (with opposed 20 opposed opposed faces; Lower surface) the last second connection metal level 25 that is formed with of 29a.The second connection metal level 25 for example is Ge.
As shown in Figure 1; First connect metal level 24 and second being connected under the state of metal level 25 butts of forming in anchor portion 29 sides what opposed 20 side formed, through carrying out predetermined heating and handle and make the first connection metal level 24 be connected 25 eutectics joints of metal level with second adding to depress.Thus, anchor portion 29 and 22 in fixed bearing portion become via being connected metal level 24 and second by first and connect junction surface 26 that metal level 25 constitutes and the state of fixed engagement.
As shown in Figure 1, on short transverse (Z), be formed with (gap) C at interval between stationary electrode layer 28 and the movable part 34, on short transverse (Z), be formed with (gap) D at interval between jut 23 and the movable part 34.Need to prove, in Fig. 1, show clearance C, D with opposed 20 state that separates with first base material 21, still, in fact, clearance C, D be opposed 20 with state that first base material 21 engages under stipulated.
In embodiment shown in Figure 1, the surperficial 28a of stationary electrode layer 28 is formed on than on the low position of the surperficial 23a of jut 23.Thus, movable part 34 displacement downwards is under the state of surperficial 23a butt at the confined planes of movable part 34 and jut 23, can suitably suppress the electrical short as 28 of the movable part 34 of movable electrode and stationary electrode layers.
In addition, as shown in Figure 1, generating on the surperficial 28a of stationary electrode layer 28 under 31 the situation heaved, the surface of stationary electrode layer 28 is by the surperficial 31a regulation of heaving 31, and at this moment, the interval (gap) on the short transverse that stationary electrode layer 28 and movable part are 34 is E.So, even be formed with under 31 the situation heaved, the surface of stationary electrode layer 28 is promptly heaved 31 surperficial 31a and also is limited in the position lower than the surperficial 23a of jut 23.Need to prove, in embodiment shown in Figure 1, can make stationary electrode layer 28 to form with the first connection metal level, 24 different operations, also can be to form with the first connection metal level, 24 identical operations.
On the other hand, in embodiment shown in Figure 2, stationary electrode layer 32 is by first connecting metal level 24 thin thickness and form than what on the surperficial 22b of opposed 20 fixed bearing portion 22, forming.
In embodiment shown in Figure 2, stationary electrode layer 32 is to form with the first connection metal level, 24 different operations.At this moment, even can also being difficult for forming the material of heaving by the thermal treatment of carrying out through the joint operation that is connected 25 of metal levels based on the first connection metal level 24 with second, stationary electrode layer 32 forms.Perhaps, the generation that suitably suppresses to heave even stationary electrode layer 32 by forming with the first connection metal level, 24 identical Al or Al alloys, also can form thinly through the thickness with stationary electrode layer 32.Stationary electrode layer 32 shown in Figure 2 can be formed by Al, Al alloy (AlCu, AlSiCu, AlSi, AlScCu etc.), Si, Cu, Au, Ru, Pt etc.As an example that illustrates, stationary electrode layer 32 also can be formed by the stepped construction of Ti layer (about 0.02 μ m)/AlCu layer (about 0.3 μ m).On the other hand, the first connection metal level 24 for example can be formed by the stepped construction of Ta layer (about 0.02 μ m)/AlCu layer (about 0.8 μ m)/Ge layer (about 0.03 μ m).
In embodiment shown in Figure 2, the thickness of stationary electrode layer 32 forms forr a short time than the interval (gap F) on the short transverse between the surperficial 32a of the surperficial 23a of jut 23 and stationary electrode layer 32.The thickness of stationary electrode layer 32 forms below the 1 μ m, preferably can form below the 0.5 μ m.On the other hand, gap F can be adjusted to about 1 μ m～2 μ m about.
Thus; Behind the surperficial 23a butt of movable part 34 and jut 23; Even act on stronger physical quantity variation etc. and shown in the dotted line G of Fig. 2 that kind make movable part 34 flexural deformation downwards, also can suppress movable part 34 to contact, thereby prevent to produce electrical short with jut 23.
In embodiment shown in Figure 3, same with Fig. 1, embodiment shown in Figure 2, the surperficial 32a of stationary electrode layer 32 is positioned at the position lower than the surperficial 23a of jut 23.In addition, in Fig. 3, with Fig. 2 likewise, the thickness of stationary electrode layer 32 forms to such an extent that to connect the thickness of metal level 24 than first thin.
In Fig. 3, different ground with Fig. 1, Fig. 2, first connects metal level 24 is formed on the surperficial 22a that is positioned at the fixed bearing portion 22 of the surperficial 23a sustained height position of jut 23.In embodiment shown in Figure 3, become and Fig. 1, the same mode of Fig. 2 with the clearance C of 34 of stationary electrode layer 32 and movable parts, the amount of being dug into of the recess 27 of 23 of fixed bearing portion 22 and juts is adjusted.In Fig. 3; Form thinlyyer through thickness than the thickness of the first connection metal level 24 with stationary electrode layer 32; And with the surperficial 22a of the fixed bearing portion 22 of the surperficial 23a equal height of jut 23 on be provided with first and be connected metal level 24; Thereby the clearance C that is adjusted to 34 of stationary electrode layer 32 and movable parts easily remains unchanged, and interval (gap) H on the short transverse of 34 of jut 23 and movable parts is wideer than Fig. 1, embodiment shown in Figure 2.
In Fig. 1, stationary electrode layer 28 forms with the thickness that is connected metal level 24 roughly the same degree with first.In this case, though stationary electrode layer 28 contains Al through forming with connecting metal level 24 identical operations in stationary electrode layer 28.Therefore, with same, also on the surperficial 28a of stationary electrode layer 28, form easily and heave 31 at comparative example illustrated in fig. 10.Therefore, if prediction generated heave 31 maximum and recess 27 formed more than the necessary degree of depth, 31 the surperficial 31a of heaving that then becomes the surface of stationary electrode layer 28 maybe not can become the position lower than the surperficial 23a of jut 23.On the other hand, through stationary electrode layer 28 is formed in the darker recess 27, the clearance C that movable part 34 and stationary electrode layer are 28 broadens easily.In addition, because of making the deviation of clearance C easily, the deviation of heaving 31 growing amount becomes big.Therefore, in Fig. 1, hang down one section surperficial 22b through on the surface of fixed bearing portion 22, forming, and form the junction surface 26 that engages with anchor portion 29 above that, thus, can suppress the expansion of clearance C as far as possible.If clearance C enlarges, then can cause the sensor sensitivity to reduce.
On the other hand, as shown in Figure 3, form to such an extent that connect in the thin embodiment of metal level 24 than first at stationary electrode layer 32, as shown in Figure 1, on the surface of stationary electrode layer 32, form and heave.Perhaps can make the growing amount of heaving very little.Therefore, under the form of Fig. 3, heave even generate, the mode that also can be positioned at the position lower than the surperficial 23a of jut 23 with the surperficial 32a of stationary electrode layer 32 makes recess 27 form shallowly effectively.In addition, because the growing amount of heaving is very little, be adjusted to setting easily so the change of clearance C is little.Therefore, in Fig. 3,, also can clearance C suitably be adjusted to less value even junction surface 26 is formed on the highest surperficial 22a of fixed bearing portion 22.The surperficial 22a of fixed bearing portion 22 is the height identical with the surperficial 23a of jut 23.So, the bonding station that anchor portion 29 and fixed bearing portion are 22 moves to than Fig. 1, Fig. 2 and leans on the place, top, can enlarge the gap H of 23 of movable part 34 and juts thus.
Through above such gap H that increases movable part 34 and jut 23, can increase the addendum modification of movable part 34 on short transverse.Therefore, when movable part 34 when the recovering state with jut 23 butts is virgin state, can increase the restoring force under the identical elasticity coefficient, can more effectively improve anti-stickability.
Need to prove that in embodiment shown in Figure 3, the thickness of stationary electrode layer 32 also forms forr a short time than the gap F between the surperficial 32a of the surperficial 23a of jut 23 and stationary electrode layer 32.
In the form of Fig. 1, Fig. 2; Reduce height if cut jut 23, clearance D is broadened, but in this case; The surperficial 28a of stationary electrode layer 28 and the surperficial 23a of jut 23 on short transverse near, therefore have the situation that can't fully guarantee gap F (with reference to Fig. 2).Therefore, as shown in Figure 3, the surperficial 22a and the surperficial 23a of jut 23 that are formed with the fixed bearing portion 22 at junction surface 26 preferably are defined as sustained height.
In embodiment shown in Figure 3, the jut 33 of the height lower than jut 23 is formed on opposed 20 the surface.At this, in the explanation of following Fig. 3, with jut 23 as first jut 23, with jut 33 as second jut 33.
When movable part 34 displacement downwards, it bears the above physical quantity of a certain regulation and changes, movable part 34 initial butts be the surperficial 23a of highly the highest first jut 23.When making movable part 34 flexural deformation downwards as utilizing Fig. 2 explaining because of stronger physical quantity variation effect etc., the surperficial 33a butt of movable part 34 and highly low second jut 33.Therefore, be formed with highly different can with the form of Fig. 3 of a plurality of juts 23,33 of movable part 34 butts in, surperficial 23a, the 33a of each jut 23,33 are positioned on the surperficial high position than stationary electrode layer.
Fig. 1 extremely embodiment shown in Figure 3 is applicable to physical quantity transducer for example shown in Figure 4.
As shown in Figure 4, physical quantity transducer possesses opposed 40 and first base material 41.As shown in Figure 4, on the surperficial 42a of second substrate 42 that forms by silicon that constitutes opposed 40 etc., be formed with dielectric base layers 43 such as monox.As shown in Figure 4, on the surperficial 43a of silicon oxide layer 43, be formed with inner wiring layer 44.
As shown in Figure 4, to dielectric base layer 43, be formed with insulation course 45 on the wiring layer 44 internally.On insulation course 45, with inner wiring layer 44 opposed position on be formed with through hole 46,47.
As shown in Figure 4, on the surface of insulation course 45, with anchor portion 48 that constitutes first base material 41 and frame 49 opposed position on be formed with the fixed bearing portion 50,51 of outstanding shape.
In addition, as shown in Figure 4, on the surface of insulation course 45, be formed with jut 52.Jut 52 be formed on movable part 53 on opposed position on the short transverse, surperficial 52a constitutes the confined planes with respect to movable part 53.
As shown in Figure 4, first base material 41 that is arranged on opposed 40 top constitutes the movable part 53 that has anchor portion 48, link via spring portion 63 with anchor portion 48, and frame 49.Frame 49 is for surrounding the shaped as frame shape on every side of movable part 53.
As shown in Figure 4,50 in anchor portion 48 and fixed bearing portion are connected the junction surface 56 that metal level 55 constitutes and engage through being connected metal level 54 by first with second.Equally, also be connected junction surface 57 joints that metal level 55 constitutes with second between frame 49 and the fixed bearing portion 51 through connecting metal level 54 by first.
As shown in Figure 4, (sacrifice layer (Japanese original text: the appearance layer)) 58 is supported base material 59 fixed bearings to the upper surface of first base material 41 via oxidation insulating layer.Can constitute SOI (Silicon on Insulator) substrates through first base material 41, oxidation insulating layer 58 and supporting substrate 59.Supporting substrate 59 is formed by silicon.
As shown in Figure 4, on the recess 60 more recessed, be formed with stationary electrode layer 61 than the lip-deep fixed bearing portion 51 that is formed at insulation course 45 and jut 52.Stationary electrode layer 61 is electrically connected with inner wiring layer 44 via the through hole 46 that is formed on the insulation course 45 in the inboard of frame 49.In addition, in the outside of frame 49, electrode pad 62 is electrically connected with inner wiring layer 44 via the through hole 47 that is formed on the insulation course 45.
In embodiment shown in Figure 4, the surperficial 61a of stationary electrode layer 61 is formed on than on the low position of surperficial 50a, the 51a of the surperficial 52a of jut 52 and each fixed bearing portion 50,51.In addition, in the embodiment of Fig. 4, the thickness of stationary electrode layer 61 forms to such an extent that to connect metal level 54 than first thin, in addition, be formed with first connect the fixed bearing portion 50 of metal level 54 the surperficial 52a of surperficial 50a, 51a and jut 52 become sustained height.In addition, the Film Thickness Ratio of stationary electrode layer 61 is little to interval (gap) H on the short transverse of the surperficial 61a of stationary electrode layer 61 from the surperficial 52a of jut 52.
Perhaps, Fig. 1 is applicable to physical quantity transducer shown in Figure 5 to embodiment shown in Figure 3.
The outer frame part that is surrounded by rectangular long limit 70a, 70b and minor face 70c, 70d of physical quantity transducer shown in Figure 5 is a movable part 71.
As shown in Figure 5, be provided with two supporting union bodies 72,73 in the inboard of movable part 71.The flat shape of supporting union body 72,73 forms crank-like.
As shown in Figure 5, in the first supporting union body 72, forwards the first armite 72a of (X1) extension is integrally formed with the shank 72b of (X2) extension rearward.In addition, as shown in Figure 5, in the second supporting union body 73, rearward the shank 73b of the first armite 73a of (X2) extension and (X1) extension forwards is integrally formed.
As shown in Figure 5, in the inboard of movable part 71, vacate the compartment of terrain along the Y1-Y2 direction and be set side by side with first anchor portion 74, second anchor portion 75 and the 3rd anchor portion 76.
As shown in Figure 5, the first armite 72a and the movable part 71 of the first supporting union body 72 connect to rotation freely at the 80a of spring portion, and the first armite 73a and the movable part 71 of the second supporting union body 73 connect to rotation freely at the 80b of spring portion.
Furthermore, the first supporting union body 72 connects to rotation freely at the 81a of spring portion, 81b.In addition, as shown in Figure 5, the second supporting union body 73 connects to rotation freely at the 82a of spring portion, 82b.
In addition, as shown in Figure 5, be provided with second armite 83 and second armite 84. Second armite 83,84 is formed on the inboard of movable part 71.
As shown in Figure 5, second armite 83 connects to rotation freely with movable part 71 at the 85a of spring portion.In addition, second armite 84 connects to rotation freely with movable part 71 at the 85b of spring portion.In addition, as shown in Figure 5, second armite 83 connects to rotation freely with anchor portion 75 at the 87a of spring portion.In addition, second armite 84 connects to rotation freely with anchor portion 76 at the 87b of spring portion.
Furthermore, as shown in Figure 5,83 of the first armite 72a and second armites link via the 88a of spring portion.In addition, as shown in Figure 5,84 of the first armite 73a and second armites link via the 88b of spring portion.
In physical quantity transducer shown in Figure 5, change through the physical quantity that acts on the short transverse, as Fig. 6 was extremely shown in Figure 8, movable part 71 was along short transverse (Z) displacement.At this moment, shank 72b, 73b towards the reverse direction of the displacement direction of movable part 71 along short transverse (Z) displacement.
Thus, can on opposed 90 surface, be provided with shown in Fig. 9 (a) such and the jut 91 of shank 72b, 73b butt and as Fig. 9 (b) shown in jut 92 these both sides of such and movable part 71 butts.The surperficial 91a of jut 91 is the confined planes with respect to shank 72b, 73b, and the surperficial 92a of jut 92 is the confined planes with respect to movable part 71.As shown in Figure 9, on opposed 90 surface, be arranged at jut 91,92, anchor portion 74～76 opposed position on fixed bearing portion (not shown) part in addition on the recess 94 that forms be formed with stationary electrode layer 93.And the surperficial 93a of stationary electrode layer 93 is formed on the low position of the surperficial 92a of jut 92 that can butt than movable part 71.
If physical quantity transducer shown in Figure 5 is suitable for embodiment shown in Figure 3, then compare easily and set gap H wide with the embodiment of Fig. 1, Fig. 2, therefore can increase movable part 71 and shank 72b, 73b addendum modification to short transverse.Therefore, even elasticity coefficient is identical, the restoring force when also can to increase from the recovering state of Fig. 9 be original stationary state, thus anti-stickability effectively is improved.Through comparing the form that forms Fig. 3 with the form of Fig. 1, can knowing restoring force is increased to about 1.5 times～2 times.
This embodiment can be applicable in the various physical quantity transducers such as acceleration transducer, angular-rate sensor, crash sensor.
Symbol description
20,40 opposed portions
21,41 first base materials
22,50,51 fixed bearing portions
The surface of 22a, 22b, 50a, 51a fixed bearing portion
23,33,52 juts
The surface of 23a, 33a, 52a jut
24,54 first connect metal level
25,55 second connect metal level
26,56,57 junction surfaces
27 recesses
28,32,61 stationary electrode layers
The surface of 28a, 32a stationary electrode layer
29,48 anchor portion
30 spring portions
31 heave
The surface that 31a heaves
34,53,71 movable parts
44 inner wiring layers
45 insulation courses
36,47 through holes
49 frames
Claims (according to the modification of the 19th of treaty)
1. [revise afterwards] a kind of physical quantity transducer, it is characterized in that possessing:
Base material, it has anchor portion and on said anchor portion, is supported to via spring portion can be along the movable part of short transverse displacement; Opposed portion, itself and said base material be the opposed and said anchor portion of fixed bearing on short transverse, and on short transverse, to vacate the compartment of terrain opposed with said movable part; Stationary electrode layer, it is formed on said opposed and the opposed surface of said movable part; Jut, its surface is the confined planes spacing to said movable part; Fixed bearing portion, it is arranged on said opposed and the opposed surface of said anchor portion; The junction surface, it is by constituting the metal level that engages between said fixed bearing portion and said anchor portion,
Said jut is outstanding from said opposed surface, on said opposed the surperficial recessed surface than said jut, disposes said stationary electrode layer, and the surface of the said stationary electrode layer of surface ratio of said jut is outstanding on short transverse,
Said opposed possesses second substrate and the lip-deep insulation course that is formed on said second substrate; In said insulation course, be formed with the inside wiring layer that is electrically connected with said fixed electorde, on the surface of said insulation course, be formed with said fixed bearing portion and said jut.
2. physical quantity transducer according to claim 1 is characterized in that,
The surface of the said stationary electrode layer of surface ratio of said fixed bearing portion that is formed with said junction surface is outstanding on short transverse.
3. physical quantity transducer according to claim 1 and 2 is characterized in that,
Said junction surface will be will first connecting second being connected the mode that metal interlevel engages and constituting of forming on metal level and the surface in said anchor portion what form on the surface of said fixed bearing portion, and the thickness of said stationary electrode layer forms forr a short time than the thickness of the said first connection metal level.
4. physical quantity transducer according to claim 3 is characterized in that,
Be formed with said first connect the said fixed bearing portion of metal level the surface be formed on the surperficial identical height and position with said jut.
5. according to any described physical quantity transducer in the claim 1 to 4, it is characterized in that,
The Film Thickness Ratio of said stationary electrode layer is little to the interval on the surface height direction of stationary electrode layer from the surface of jut.
6. [append] according to any described physical quantity transducer in the claim 1 to 5, it is characterized in that,
Said stationary electrode layer with have with said first be connected the metal level material different mode form.
7. [append] physical quantity transducer according to claim 6, it is characterized in that,
Said stationary electrode layer forms with the mode with Al, Al alloy, Si, Cu, Au, Ru, Pt.
Claims (5)
1. physical quantity transducer is characterized in that having:
Base material, it has anchor portion and on said anchor portion, is supported to via spring portion can be along the movable part of short transverse displacement; Opposed portion, itself and said base material be the opposed and said anchor portion of fixed bearing on short transverse, and on short transverse, to vacate the compartment of terrain opposed with said movable part; Stationary electrode layer, it is formed on said opposed and the opposed surface of said movable part; Jut, its surface is the confined planes spacing to said movable part; Fixed bearing portion, it is arranged on said opposed and the opposed surface of said anchor portion; The junction surface, it is by constituting the metal level that engages between said fixed bearing portion and said anchor portion,
Said jut is outstanding from said opposed surface, on said opposed the surperficial recessed surface than said jut, disposes said stationary electrode layer, and the surface of the said stationary electrode layer of surface ratio of said jut is outstanding on short transverse.
2. physical quantity transducer according to claim 1 is characterized in that,
The surface of the said stationary electrode layer of surface ratio of said fixed bearing portion that is formed with said junction surface is outstanding on short transverse.
3. physical quantity transducer according to claim 1 and 2 is characterized in that,
Said junction surface will be will first connecting second being connected the mode that metal interlevel engages and constituting of forming on metal level and the surface in said anchor portion what form on the surface of said fixed bearing portion, and the thickness of said stationary electrode layer forms forr a short time than the thickness of the said first connection metal level.
4. physical quantity transducer according to claim 3 is characterized in that,
Be formed with said first connect the said fixed bearing portion of metal level the surface be formed on the surperficial identical height and position with said jut.
5. according to any described physical quantity transducer in the claim 1 to 4, it is characterized in that,
The Film Thickness Ratio of said stationary electrode layer is little to the interval on the surface height direction of stationary electrode layer from the surface of jut.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-050948 | 2010-03-08 | ||
| JP2010050948 | 2010-03-08 | ||
| PCT/JP2011/054114 WO2011111540A1 (en) | 2010-03-08 | 2011-02-24 | Physical quantity sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102792170A true CN102792170A (en) | 2012-11-21 |
| CN102792170B CN102792170B (en) | 2014-07-02 |
Family
ID=44563348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180012940.7A Expired - Fee Related CN102792170B (en) | 2010-03-08 | 2011-02-24 | Physical quantity sensor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2011111540A1 (en) |
| CN (1) | CN102792170B (en) |
| WO (1) | WO2011111540A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106018879A (en) * | 2016-05-12 | 2016-10-12 | 上海芯赫科技有限公司 | MEMS acceleration sensor and manufacturing method thereof |
| CN107407694A (en) * | 2015-02-24 | 2017-11-28 | 三菱电机株式会社 | Semiconductor device and its manufacture method |
| CN111751575A (en) * | 2019-03-27 | 2020-10-09 | 精工爱普生株式会社 | Inertial sensor, electronic apparatus, and moving object |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5898556B2 (en) * | 2012-04-25 | 2016-04-06 | アルプス電気株式会社 | MEMS sensor and manufacturing method thereof |
| WO2017047663A1 (en) * | 2015-09-17 | 2017-03-23 | 株式会社村田製作所 | Mems device and method for producing same |
| EP4209451A1 (en) * | 2022-01-10 | 2023-07-12 | Murata Manufacturing Co., Ltd. | Early-impact out-of-plane motion limiter for mems device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09506975A (en) * | 1994-03-28 | 1997-07-08 | アイ／オー、センサーズ、インコーポレーテッド | Sensor structure having L-shaped spring legs |
| WO2000055638A1 (en) * | 1999-03-17 | 2000-09-21 | Input/Output, Inc. | Sensor design and process |
| JP2004506203A (en) * | 2000-08-04 | 2004-02-26 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Components using micromachining technology |
| JP2007113817A (en) * | 2005-10-19 | 2007-05-10 | Mitsubishi Electric Corp | Refrigerator-freezer |
| JP2008241481A (en) * | 2007-03-27 | 2008-10-09 | Matsushita Electric Works Ltd | Sensor element |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07113817A (en) * | 1993-10-15 | 1995-05-02 | Hitachi Ltd | Acceleration sensor |
-
2011
- 2011-02-24 CN CN201180012940.7A patent/CN102792170B/en not_active Expired - Fee Related
- 2011-02-24 WO PCT/JP2011/054114 patent/WO2011111540A1/en active Application Filing
- 2011-02-24 JP JP2012504401A patent/JPWO2011111540A1/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09506975A (en) * | 1994-03-28 | 1997-07-08 | アイ／オー、センサーズ、インコーポレーテッド | Sensor structure having L-shaped spring legs |
| WO2000055638A1 (en) * | 1999-03-17 | 2000-09-21 | Input/Output, Inc. | Sensor design and process |
| JP2004506203A (en) * | 2000-08-04 | 2004-02-26 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Components using micromachining technology |
| JP2007113817A (en) * | 2005-10-19 | 2007-05-10 | Mitsubishi Electric Corp | Refrigerator-freezer |
| JP2008241481A (en) * | 2007-03-27 | 2008-10-09 | Matsushita Electric Works Ltd | Sensor element |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107407694A (en) * | 2015-02-24 | 2017-11-28 | 三菱电机株式会社 | Semiconductor device and its manufacture method |
| CN107407694B (en) * | 2015-02-24 | 2020-08-07 | 三菱电机株式会社 | Semiconductor device and method for manufacturing the same |
| CN106018879A (en) * | 2016-05-12 | 2016-10-12 | 上海芯赫科技有限公司 | MEMS acceleration sensor and manufacturing method thereof |
| CN106018879B (en) * | 2016-05-12 | 2019-03-22 | 广东合微集成电路技术有限公司 | A kind of MEMS acceleration transducer and manufacturing method |
| CN111751575A (en) * | 2019-03-27 | 2020-10-09 | 精工爱普生株式会社 | Inertial sensor, electronic apparatus, and moving object |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011111540A1 (en) | 2011-09-15 |
| CN102792170B (en) | 2014-07-02 |
| JPWO2011111540A1 (en) | 2013-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102792170A (en) | Physical quantity sensor | |
| CN101248340B (en) | Pressure sensors and methods of making the same | |
| TWI615349B (en) | Hybrid integrated component | |
| CN102295264A (en) | Planar cavity mems and related structures, methods of manufacture and design structures | |
| US9840410B2 (en) | Micromechanical component | |
| KR101215919B1 (en) | Capacitive type pressure sensor and method for fabricating the same | |
| JP2002273699A (en) | Micromechanical element and its manufacturing method | |
| JP2013018114A (en) | Method for producing structure having buried electrode by direct transfer and thus obtained structure | |
| CN102160185B (en) | Mems sensor | |
| TWI666164B (en) | Mikromechanischer sensor und verfahren zur herstellung eines mikromechanischen sensors | |
| JP2007160495A (en) | Mems vibrator, and method for manufacturing the same | |
| US9643836B2 (en) | Method for producing a pressure sensor and corresponding sensor | |
| US10830590B2 (en) | Micromechanical sensor | |
| CN109626318B (en) | Cover plate structure, manufacturing method thereof and capacitive sensor | |
| JP2010238921A (en) | Mems sensor | |
| WO2012014792A1 (en) | Physical quantity sensor and manufacturing method for same | |
| CN103569939A (en) | Micro-machine structure and corresponding making method | |
| CN104198761A (en) | Capacitance-type dynamic-quantity sensor and manufacturing method therefor | |
| JP4839466B2 (en) | Inertial force sensor and manufacturing method thereof | |
| CN102792168B (en) | Mems sensor | |
| US9513476B2 (en) | Microelectromechanical component and corresponding production method | |
| JP5676022B2 (en) | Micromechanical element and method for manufacturing micromechanical element | |
| JP2003181976A (en) | Laminate, switch, detecting device, joining part, wiring, electrostatic actuator, capacitor, measuring device and radio | |
| CN102770770A (en) | Physical quantity sensor | |
| KR101197570B1 (en) | Piezoresistor type pressure sensor and method for fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: Alpine Alpine Company Address before: Tokyo, Japan, Japan Patentee before: Alps Electric Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140702 Termination date: 20200224 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |