CN102790537A - Power conversion device - Google Patents
Power conversion device Download PDFInfo
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- CN102790537A CN102790537A CN2012101496876A CN201210149687A CN102790537A CN 102790537 A CN102790537 A CN 102790537A CN 2012101496876 A CN2012101496876 A CN 2012101496876A CN 201210149687 A CN201210149687 A CN 201210149687A CN 102790537 A CN102790537 A CN 102790537A
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- igbt module
- insulation wall
- crowd
- power conversion
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Abstract
The invention provides a power conversion device, which is advantageous in that, even under the condition that an IGBT element of the power conversion device is broken, and therefore conductive gas is generated due to flying of internal components, short circuit closed circuit with voltage exceeding a rated voltage of a fuse being applied is difficult to generate. The power conversion device is provided with: a plurality of switch elements in a series connection between a positive side DC power source and a busbar of an output AC power; a plurality of switch elements in a series connection between a negative side DC power source and a busbar of an output AC power; a diode element connected between a neutral point DC power source and the switch elements; and an insulating wall preventing short circuit closed circuit caused by conductive gas near the switch elements. The insulation wall is disposed between the switch elements and the fuse, or between the switch elements and the diode module, or between the switch elements and the busbar, or between the switch elements. Or, the insulation wall covers the surrounding of the switch elements.
Description
Technical field
The present invention relates to use the power conversion unit of switch element.
Background technology
In recent years, be rotated with rotary speed arbitrarily in order to make alternating current motor, power conversion unit has been widely used.In power conversion unit; General application becomes ac voltage rectifier the rectifier of direct voltage and direct voltage is reverse into the inverter of alternating voltage, and uses big capacity (high voltage, big electric current) usually and can carry out the IGBT of switch (Insulated Gate Bipolar Transistor at high speed; Igbt) is used as switch element (for example, with reference to patent documentation 1).
Patent documentation
Patent documentation 1: TOHKEMY 2010-178542 communique
Yet under the situation of running power converting means under the state of the IGBT of main circuit element breakage, the IGBT element of described breakage can break, and produces conductivity gas because of dispersing of internal structure sometimes.Consequently, around conductivity gas covering IGBT element and fuse, then exist to produce possibility above the short circuit path of fuse rated voltage.
And, comprise that the existing power conversion unit of patent documentation 1 does not propose sufficient countermeasure for such situation.
Summary of the invention
For this reason, the present invention is in order to solve such problem points, and its purpose is, even thereby provide a kind of in breakage the IGBT element fracture produce because of dispersing of internal structure under the situation of conductivity gas, also be difficult to produce the power conversion unit of short circuit path.
In order to solve described problem, constituted power conversion unit of the present invention by following mode.
That is, possess: a plurality of switch elements that between the busbar of positive side DC power supply and output AC power, are connected in series; The a plurality of switch elements that between the busbar of minus side DC power supply and output AC power, are connected in series; With the diode element that is connected between neutral point direct current power supply and the said switch element; Insulation wall with near the short circuit path that prevents said switch element, to cause because of conductivity gas.
The invention effect
According to the present invention, even thereby can provide a kind of in breakage the IGBT element fracture produce because of internal structure disperses under the situation of conductivity gas, also be difficult to produce the power conversion unit of short circuit path.
Description of drawings
Fig. 1 is the related pie graph between circuit and the insulation wall of power conversion unit of expression the 1st execution mode of the present invention.
Fig. 2 is the related pie graph between circuit and the insulation wall of power conversion unit of expression the 2nd execution mode of the present invention.
Fig. 3 is illustrated in the power conversion unit of the 1st execution mode of the present invention the stereogram that the main circuit of each phase has been carried out a plurality of structural planes under unit (cell) the Componentized situation.
Fig. 4 is the stereogram that is illustrated in the power conversion unit of the 2nd execution mode of the present invention a plurality of structural planes under the situation that main circuit to each phase carried out unit blockization.
Label declaration
10,11 power conversion units
20,21 alternating current motors, ACM
The bus of the bus of 31 positive side DC power supplys, positive side DC power supply P
The bus of the bus of 32 minus side DC power supplys, minus side DC power supply N
The bus of the bus of 33 neutral point direct current power supplys, neutral point direct current power supply COM
34 ground connection
41,42 capacitors
101,201 the 1st insulation walls
102,202 the 2nd insulation walls
111 IGBT modules, IGBT module crowd, positive side IGBT module crowd (switch element)
111A IGBT
The 111B diode
112 IGBT modules, the 1st neutral point IGBT module crowd (switch element)
113 IGBT modules, the 2nd neutral point IGBT module crowd (switch element)
114 IGBT modules, minus side IGBT module crowd (switch element)
121 diode (led) modules, diode (led) module crowd, positive side diode (led) module (diode element)
122 diode (led) modules, diode (led) module crowd, minus side diode (led) module (diode element)
131,231 positive side fuses
132,232 minus side fuses
133,233 neutral point fuses
141,142,143,241,242,243 phase voltages form circuit
151,251 lead-out terminals, UAC
152,252 lead-out terminals, VAC
153,253 lead-out terminals, WAC
203 the 3rd insulation walls
204 the 4th insulation walls
211～218 IGBT modules
221～224 diode (led) modules, diode (led) module crowd
361～363,461～463 laminated bus bars (busbar)
412 diode (led) module crowds, positive side diode (led) module crowd (diode element)
434 diode (led) module crowds, minus side diode (led) module crowd (diode element)
512 positive side IGBT module crowds (switch element)
534 the 1st neutral point IGBT module crowds (switch element)
556 the 2nd neutral point IGBT module crowds (switch element)
578 minus side IGBT module crowds (switch element)
Embodiment
Below, be used for the mode of embodiment of the present invention with reference to accompanying drawing explanation.
(the 1st execution mode)
Fig. 1 is the related pie graph between circuit and the insulation wall of power conversion unit of expression the 1st execution mode of the present invention.The power conversion unit of the 1st execution mode for example in the high-capacity power converting means of the driving usefulness of the main frame alternating current motor that is applied to steel rolling factory use.
At first, explain that the circuit of power conversion unit constitutes, thereafter, the insulation wall in the power conversion unit is described.
< circuit of power conversion unit constitutes the 1st execution mode >
In Fig. 1; The phase voltage that power conversion unit 10 possesses the U phase that forms three-phase respectively, V phase, W phase forms circuit 141,142,143, and will be transformed into the three-phase ac power of variable voltage from positive side DC power supply (positive side DC power supply P), minus side DC power supply (minus side DC power supply N), neutral point direct current power supply (the neutral point direct current power supply COM) direct current power that provides.Through from three-phase ac power, drive alternating current motor (ACM:Alternating Current Motor) 20 as the said variable voltage of the UAC151 of the lead-out terminal of power conversion unit 10, VAC152, WAC153 output.
In addition, between the bus 33 of the bus 31 of positive side DC power supply and neutral point direct current power supply, be connected with capacitor 41, between the bus 32 of the bus 33 of neutral point direct current power supply and minus side DC power supply, be connected with capacitor 42.The effect of capacitor 41,42 is removals of the stabilisation harmonic component of DC power supply.
In addition, power conversion unit 10 is got ground connection 34.
IGBT module (switch element) 111 constitutes to be possessed: IGBT111A and the diode 111B that is connected with IGBT111A inverse parallel ground (perhaps from IGBT111A the parasitic diode that structure produced).In addition, the interior formation of the formation in the IGBT module 112,113,114 and aforesaid IGBT module 111 is identical.
In addition, although in Fig. 1, souvenir is that IGBT module 111 is made up of an IGBT or IGBT module, in fact, in order to obtain the big capacity (big electric current) on electric, also a plurality ofly sometimes uses parallelly connectedly.Therefore, also the IGBT module is taken the circumstances into consideration souvenir and be " IGBT module crowd ".
In phase voltage formation circuit 141, possess 4 IGBT modules 111,112,113,114, and these IGBT modules are connected in series.
The collector electrode main terminal of IGBT module (positive side IGBT module crowd) 111 is connected via the bus 31 of positive side fuse 131 with positive side DC power supply.The emitter main terminal of IGBT module (minus side IGBT module crowd) 114 is connected with the bus 32 of minus side DC power supply via minus side fuse 132.The emitter main terminal of IGBT module 111 is connected with the negative electrode main terminal of diode (led) module 121 with the tie point of the collector electrode main terminal of IGBT module (the 1st neutral point IGBT module crowd) 112.The lead-out terminal that the tie point of the collector electrode main terminal of the emitter main terminal of IGBT module 112 and IGBT module (the 2nd neutral point IGBT module crowd) 113 becomes phase voltage formation circuit 141 is UAC151.
The tie point of the emitter main terminal of IGBT module 113 and the collector electrode main terminal of IGBT module 114 is connected with the anode main terminal of diode (led) module 122.
Diode (led) module (positive side diode (led) module) 121 anode main terminal is connected with the negative electrode main terminal of diode (led) module (minus side diode (led) module) 122.The tie point of this positive side diode (led) module 121 and minus side diode (led) module 122 is connected with the bus 33 of neutral point direct current power supply via neutral point fuse 133.
In addition, diode (led) module 121,122 functions as electric circuit are diodes.Actual constitute, and through modularization, and then constitute, therefore take the circumstances into consideration souvenir and be " diode (led) module ", perhaps " diode (led) module crowd " by a plurality of modules by a plurality of diodes.
In addition, IGBT module 111 is used for the current potential of the bus 31 of positive side DC power supply is exported to the UAC151 of lead-out terminal, and in addition, IGBT module 114 is used for the current potential of the bus 32 of minus side DC power supply is exported to the UAC151 of lead-out terminal.
In addition, IGBT module 112 and IGBT module 113 are used for the current potential of the bus 33 of neutral point direct current power supply is exported to the UAC151 of lead-out terminal.
In addition, the grid of the IGBT separately in the IGBT module 111～114 is by PWM (Pulse Width Modulation: pulse-width modulation) concentrated area control, and to the UAC151 output AC power of lead-out terminal.
In addition, to the wired circuit that connects particularly, omit souvenir to the grid of IGBT.
Form the circuit formation of circuit 141 although phase voltage below only has been described, the circuit that phase voltage forms circuit 142,143 constitutes also identical.Through to form in phase voltage circuit 141～143 separately in IGBT module concentrated area that possessed, that be total up to 12 (4 * 3 phases) carry out PWM control, come UAC151, the VAC152 from lead-out terminal, three-phase (U phase, V phase, the W phase) AC power of WAC153 output variable voltage.
In addition, be used for concentrating the PWM centralized control circuit of the PWM control of carrying out each IGBT module also not shown.
In addition; Positive side IGBT module crowd the 111, the 1st neutral point IGBT module crowd the 112, the 2nd neutral point IGBT module crowd 113, minus side IGBT module crowd's 114 action relationships is: when positive side IGBT module crowd 111 and the 1st neutral point IGBT module crowd 112 were in conducting state, the 2nd neutral point IGBT module crowd 113 and minus side IGBT module crowd 114 became cut-off state.
In addition, when the 1st neutral point IGBT module crowd 112 and the 2nd neutral point IGBT module crowd 113 were in conducting state, positive side IGBT module crowd 111 became cut-off state with minus side IGBT module crowd 114.
In addition, when the 2nd neutral point IGBT module crowd 113 was in conducting state with minus side IGBT module crowd 114, positive side IGBT module crowd 111 and the 1st neutral point IGBT module crowd 112 were cut-off states.
< insulation wall the 1st execution mode of power conversion unit >
Next, insulation wall and the installation thereof that the 1st execution mode is possessed is described.
In Fig. 1, possesses the 1st insulation wall 101 according to the mode of between diode (led) module crowd 121,122 and IGBT module crowd 111～114, isolating.
In addition, the 2nd insulation wall 102 covers the side of IGBT module crowd 111～114 the opposition side with the 1st insulation wall 101 1 sides.
In addition, the 2nd insulation wall 102 according in the taking-up place of the UAC151 of lead-out terminal to the mode that IGBT module crowd 112 and IGBT module crowd 113 isolate, making insulation wall is double-deck formation of making a circulation.From becoming the UAC151 that takes out lead-out terminal between this double-deck insulation wall.
Below, the reason that is configured in such a way is described.
The rated voltage of positive side fuse 131, minus side fuse 132, neutral point fuse 133 is made as E [V].
Under the situation of Fig. 1, be the short circuit path more than the E in order not produce potential difference, must between the place of the place of current potential E and current potential-E, not be full of conductivity gas.
Consider the situation when positive side IGBT module crowd 111 and the 1st neutral point IGBT module crowd 112 are in conducting state.
The place of current potential E of this moment is the UAC151 of positive side fuse 131, positive side IGBT module crowd the 111, the 1st neutral point IGBT module crowd 112, lead-out terminal.In addition, the place of current potential-E is a minus side fuse 132.
Consider the situation when the 1st neutral point IGBT module crowd 112 and the 2nd neutral point IGBT module crowd 113 are in conducting state.
The place of the current potential E of this moment is positive side fuse 131.In addition, the place of current potential-E is a minus side fuse 132.
Consider the situation when the 2nd neutral point IGBT module crowd 113 is in conducting state with minus side IGBT module crowd 114.
The place of the current potential E of this moment is positive side fuse 131.The place of current potential-E is the UAC151 of minus side fuse the 132, the 2nd neutral point IGBT module crowd 113, minus side IGBT module crowd 114, lead-out terminal.
By with upper type, the 1st insulation wall 101 is set between diode (led) module crowd 121,122 and IGBT module crowd 111～114, and, except there being the side of the 1st insulation wall 101, also be provided with the 2nd insulation wall 102 by aforementioned manner.
Therefore, be made as with the 1st insulation wall 101 and the 2nd insulation wall 102 and covered IGBT module crowd 111～114 formation.
At this moment, not segregate part becomes: between positive side IGBT module crowd 111 and the 1st neutral point IGBT module crowd 112 and between minus side IGBT module crowd 114 and the 2nd neutral point IGBT module crowd 113.Between these IGBT module crowds, according to said operate condition, potential difference is less than E.
If be provided with the 1st such insulation wall 101 and the 2nd insulation wall 102; Even then the IGBT element is damaged, thereby the conductivity of breaking gas disperses; Do not exist potential difference to surpass the short circuit path of E yet; Therefore positive side fuse 131, minus side fuse 132, neutral point fuse 133 be action normally all, thereby by overcurrent.
In addition, in Fig. 1, the laminated bus bar (plate electrode after range upon range ofization) 361～363 that will after Fig. 3 carries out, state of souvenir not.
< main circuit of each phase having been carried out structure the 1st execution mode of the power conversion unit after the unit blockization >
Fig. 3 is illustrated in the power conversion unit, the main circuit of each phase has been carried out the stereogram of a plurality of structural planes under the situation of unit blockization, in (a) and (b), (c), the various structure face has been shown.
Fig. 3 (a) show the 1st insulation wall 101, with IGBT module crowd 111～114, with diode (led) module crowd 121,122, with the relation of positive side fuse 131, minus side fuse 132, neutral point fuse 133, after Fig. 3 (b), the laminated bus bar (busbar) 361～363 and the 2nd insulation wall 102 of (c) of stating be not by the structural plane of souvenir.
In Fig. 3 (a); Through the 1st insulation wall 101 IGBT module crowd 111～114 and diode (led) module crowd 121, isolate between 122; And, can prevent that the potential difference in positive side fuse 131, minus side fuse 132, neutral point fuse 133 and diode (led) module crowd 121,122 from surpassing the formation of the short circuit path of E to the dispersing of the conductivity gas that causes because of breaking of IGBT element.
In addition; Fig. 3 (b) show the 1st insulation wall 101 and laminated bus bar 361,362 and with IGBT module crowd 111～114, with diode (led) module crowd 121,122, with the relation of positive side fuse 131, minus side fuse 132, neutral point fuse 133, after laminated bus bar 363 and the 2nd insulation wall 102 of Fig. 3 (c) of stating be not by the structural plane of souvenir.
Following structure has been shown: according to the mode that is electrically connected between IGBT module crowd 111 and the IGBT module crowd 112 is provided with laminated bus bar 361 in Fig. 3 (b); In addition, according to the mode that is electrically connected between IGBT module crowd 113 and the IGBT module crowd 114 is provided with laminated bus bar 362.
In addition, Fig. 3 (c) show the 2nd insulation wall 102 and laminated bus bar 363 and with diode (led) module crowd 121,122, with the relation of positive side fuse 131, minus side fuse 132, neutral point fuse 133.
In addition, although have the 1st insulation wall 101, laminated bus bar 361,362 and IGBT module crowd 111～114, blocked and souvenir not by the 2nd insulation wall 102.
Although in Fig. 3 (c); The front souvenir that the 2nd insulation wall 102 is only being schemed; But in fact, the 2nd insulation wall 102 that kind as shown in Figure 1, covered the opposition side of a side with the 1st insulation wall 101 (Fig. 1, Fig. 3) the side, also have rear side and upper surface and lower surface.
In addition; As shown in Figure 1 and such as previously mentioned; " according in the taking-up place of the UAC151 of lead-out terminal to the mode that IGBT module crowd 112 and IGBT module crowd 113 isolate, making insulation wall is double-deck formation of making a circulation " in Fig. 3 (c), blocked not souvenir by range upon range of busbar 363.
In addition, the laminated bus bar 363 shown in Fig. 3 (c) be used to take out Fig. 1 lead-out terminal UAC151 and be electrically connected.
Through the 1st insulation wall 101 and the 2nd insulation wall 102 shown in Fig. 1 and Fig. 3 (a) and (b), (c), IGBT module crowd 111～114 isolates with diode (led) module crowd 121,122, positive side fuse 131, minus side fuse 132, neutral point fuse 133, laminated bus bar 363.
Therefore; To dispersing of the conductivity gas that causes because of breaking of IGBT module crowd 111～114 IGBT element; Diode (led) module crowd 121,122 and positive side fuse 131, minus side fuse 132, neutral point fuse 133, laminated bus bar 363 are isolated, thereby can prevent that potential difference from surpassing the formation of the short circuit path of E.
(the 2nd execution mode)
Fig. 2 is the related pie graph of circuit and insulation wall of the power conversion unit of expression the 2nd execution mode of the present invention.To use the power conversion unit 11 and alternating current motor 21 of the 2nd execution mode than power conversion unit of the 1st execution mode shown in Figure 1 10 and alternating current motor 20 higher voltages.
The power conversion unit 11 of Fig. 2 is that with power conversion unit 10 differences of Fig. 1 phase voltage forms circuit 241,242,243 and phase voltage forms the circuit formation of circuit 141,142,143 and the structure of insulation wall.
In addition, it be that identical circuit constitutes and the structure of insulation wall each other that phase voltage forms circuit 241,242,243, only form circuit 241 below therefore to describe to phase voltage, and to other identical inscape omission explanation.
< circuit of power conversion unit constitutes the 2nd execution mode >
In Fig. 2, IGBT module (switch element) forms in the circuit 241 in the phase voltage of U in mutually, uses 8 IGBT modules 211～218.It is also identical to form circuit 242,243 in other V phase, the W phase voltage in mutually.
As said, in phase voltage formation circuit 241, possess 8 IGBT modules 211～218, and they are connected in series.
The collector electrode main terminal of IGBT module 211 is connected via the bus 31 of positive side fuse 231 with positive side DC power supply.The emitter main terminal of IGBT module 218 is connected with the bus 32 of minus side DC power supply via minus side fuse 232.
The emitter main terminal of IGBT module 211 is connected with the collector electrode main terminal of IGBT module 212.
Through IGBT module 211 and IGBT module 212, constituted positive side IGBT module crowd 512 (Fig. 4 (a)).
The emitter main terminal of IGBT module 213 is connected with the collector electrode main terminal of IGBT module 214.
Through IGBT module 213 and IGBT module 214, constituted the 1st neutral point IGBT module crowd 534 (Fig. 4 (a)).
The emitter main terminal of IGBT module 215 is connected with the collector electrode main terminal of IGBT module 216.
Through IGBT module 215 and IGBT module 216, constituted the 2nd neutral point IGBT module crowd 556 (Fig. 4 (a)).
The emitter main terminal of IGBT module 217 is connected with the collector electrode main terminal of IGBT module 218.
Through IGBT module 217 and IGBT module 218, constituted minus side IGBT module crowd 578 (Fig. 4 (a)).
The emitter main terminal of IGBT module 212 is connected with the collector electrode main terminal of IGBT module 213, and is connected with the negative electrode main terminal of diode (led) module 221.
The emitter main terminal of IGBT module 214 is connected with the collector electrode main terminal of IGBT module 215, and to become the lead-out terminal that phase voltage forms circuit 241 be UAC251.
The emitter main terminal of IGBT module 216 is connected with the collector electrode main terminal of IGBT module 217, and is connected with the anode main terminal of diode (led) module 224.
Diode (led) module 221～224 is connected in series successively.
The anode main terminal of diode (led) module 222 is connected with the negative electrode main terminal of diode (led) module 223, and this tie point is connected with the bus 33 of neutral point direct current power supply via neutral point fuse 233.
In addition, 2 diode (led) modules 121,122 among Fig. 1 are made up of 4 diode (led) modules 221～224 in Fig. 2.The reason that the number of diode (led) module increases mainly is in order to ensure withstand voltage.
In addition, through the diode (led) module that is connected in series 221,222 of Fig. 2, constituted the diode (led) module crowd 412 among Fig. 4.In addition, through the diode (led) module that is connected in series 223,224 of Fig. 2, constituted the diode (led) module crowd 434 among Fig. 4.
In addition, be used for the current potential of the bus 31 of positive side DC power supply is exported to the UAC251 of lead-out terminal based on the positive side IGBT module crowd 512 (Fig. 4 (a)) of IGBT module 211 and IGBT module 212.
In addition, be used for the current potential of the bus 32 of minus side DC power supply is exported to the UAC251 of lead-out terminal based on the minus side IGBT module crowd 578 (Fig. 4 (a)) of IGBT module 217 and IGBT module 21 8.
In addition, be used for the current potential of the bus 33 of neutral point direct current power supply is exported to the UAC251 of lead-out terminal based on the 1st neutral point IGBT module crowd 534 (Fig. 4 (a)) of IGBT module 213 and IGBT module 214.
In addition, be used for the current potential of the bus 33 of neutral point direct current power supply is exported to the UAC251 of lead-out terminal based on the 2nd neutral point IGBT module crowd 556 (Fig. 4 (a)) of IGBT module 215 and IGBT module 216.
In addition, PWM control is carried out in the grid concentrated area of the IGBT separately in the IGBT module 211～218, and the UAC251 of lead-out terminal is exported the AC power of the amount of a phase.
Form the circuit formation of circuit 241 although phase voltage below only has been described, the circuit that phase voltage forms circuit 242,243 constitutes also identical.Through to form in phase voltage circuit 241～243 separately in IGBT module concentrated area that possessed, that be total up to 24 (8 * 3 phases) carry out PWM control, come UAC251, the VAC252 from lead-out terminal, three-phase (U phase, V phase, the W phase) AC power of WAC253 output variable voltage.
In addition, be used for concentrating the PWM centralized control circuit of the PWM control of carrying out each IGBT module also not shown.
In addition; Positive side IGBT module crowd (512, Fig. 4 (a)), the 1st neutral point IGBT module crowd (534), the 2nd neutral point IGBT module crowd (556), minus side IGBT module crowd's (578) action relationships is: as positive side IGBT module crowd (512) and the 1st neutral point IGBT module crowd (534) when being in conducting state, the 2nd neutral point IGBT module crowd (556) and minus side IGBT module crowd (578) become cut-off state.
In addition, as the 1st neutral point IGBT module crowd (534) and the 2nd neutral point IGBT module crowd (556) when being in conducting state, positive side IGBT module crowd (512) and minus side IGBT module crowd (578) become cut-off state.
In addition, as the 2nd neutral point IGBT module crowd (556) and minus side IGBT module crowd (578) when being in conducting state, positive side IGBT module crowd (512) and the 1st neutral point IGBT module crowd (534) are cut-off states.
Need to consider that above operate condition possesses insulation wall.The difference of the 2nd execution mode shown in Figure 2 and the 1st execution mode shown in Figure 1 is; In order to use the power conversion unit of the 2nd execution mode with higher voltage, positive side IGBT module crowd (512), the 1st neutral point IGBT module crowd (534), the 2nd neutral point IGBT module crowd (556), minus side IGBT module crowd (578) have in series constituted 2 IGBT module crowds (211,212), (213,214), (215,216), (217,218) respectively.Reflect that this constitutes and possesses insulation wall.
< insulation wall the 2nd execution mode of power conversion unit >
Insulation wall and installation thereof that the 2nd execution mode is possessed are described.
In Fig. 2, according to the mode of isolating between diode (led) module crowd 221～224 and the IGBT module crowd 211～218 is possessed the 1st insulation wall 201.
In addition, the side of the opposition side of the 2nd insulation wall 202 covering IGBT module crowds' 211～218 a side with the 1st insulation wall 201.In addition, the 2nd insulation wall 202 is according to the mode of the 1st neutral point IGBT module crowd (534, Fig. 4 (a)) and the 2nd neutral point IGBT module crowd (556) being isolated in the taking-up place of the UAC251 of lead-out terminal, and making insulation wall is double-deck formation of making a circulation.From becoming the UAC251 that takes out lead-out terminal between this double-deck insulation wall.
In addition, in Fig. 2, the laminated bus bar 461～463 that will after Fig. 4 carries out, state of souvenir not.
In addition, in order to align side IGBT module crowd (512) and the 1st neutral point IGBT module crowd (534) isolates, possess the 3rd insulation wall 203 is arranged.
In addition, for minus side IGBT module crowd (578) and the 2nd neutral point IGBT module crowd (556) are isolated, possess the 4th insulation wall 204 is arranged.
Below, the reason that is configured in such a way is described.
The rated voltage of positive side fuse 231, minus side fuse 232, neutral point fuse 233 is made as E [V].
Under the situation of Fig. 1, in order not produce the short circuit path that potential difference produces E, must between the place of the place of current potential E and current potential-E, not be full of conductivity gas.
About the necessity of the 1st insulation wall 201 and the 2nd insulation wall 202, identical with the 1st execution mode shown in Figure 1.
Different the 3rd insulation wall 203 and the 4th insulation walls 204 of being of insulation wall among Fig. 2 with Fig. 1.
The setting of the 3rd insulation wall 203 be because; Positive side IGBT module crowd (512) is made up of the series circuit of IGBT module 211 and IGBT module 212; And the 1st neutral point IGBT module crowd (534) is made up of the series circuit of IGBT module 213 and IGBT module 214, therefore has the possibility that can between positive side IGBT module crowd (512) and the 1st neutral point IGBT module crowd (534), produce the short circuit path of the voltage that surpasses E.
In addition; The setting of the 4th insulation wall 204 be because; Minus side IGBT module crowd (578) is made up of the series circuit of IGBT module 217 and IGBT module 218; And the 2nd neutral point IGBT module crowd (556) is made up of the series circuit of IGBT module 215 and IGBT module 216, therefore has the possibility that can between minus side IGBT module crowd (578) and the 2nd neutral point IGBT module crowd (556), produce the short circuit path of the voltage that surpasses E.
If by be provided with the 1st insulation wall the 201, the 2nd insulation wall the 202, the 3rd insulation wall 203 and the 4th insulation wall 204 with upper type; Even then thereby the IGBT element breakage/conductivity of breaking gas disperses; Do not exist potential difference to surpass the short circuit path of E yet; Positive side fuse 231, minus side fuse 232, neutral point fuse 233 be action normally all, by overcurrent.
< main circuit of each phase having been carried out structure the 2nd execution mode of the power conversion unit after the unit blockization >
Fig. 4 is the stereogram that is illustrated in the power conversion unit of the 2nd execution mode a plurality of structural planes under the situation that main circuit to each phase carried out unit blockization, in (a) and (b), (c), the various structure face has been shown.
Fig. 4 (a) show the 1st insulation wall 201, with positive side IGBT module crowd the 512, the 1st neutral point IGBT module crowd the 534, the 2nd neutral point IGBT module crowd 556, minus side IGBT module crowd 578, with diode (led) module crowd 412; 434, with the relation of positive side fuse 231, minus side fuse 232, neutral point fuse 233, after Fig. 4 (b), the laminated bus bar 461～463 and the 2nd insulation wall the 202, the 3rd insulation wall the 203, the 4th insulation wall 204 of (c) of stating be not by the structural plane of souvenir.
In Fig. 4 (a); Through the 1st insulation wall 201; Align side IGBT module crowd the 512, the 1st neutral point IGBT module crowd the 534, the 2nd neutral point IGBT module crowd 556, minus side IGBT module crowd 578, and diode (led) module crowd 412, isolate between 434; And disperse to the conductivity gas that causes because of breaking of IGBT element, can prevent that the potential difference among the diode (led) module crowd 412,434 from surpassing the formation of the short circuit path of E.
In addition, Fig. 4 (b) show the 1st insulation wall the 201, the 3rd insulation wall the 203, the 4th insulation wall 204 and laminated bus bar 461,462 and with positive side IGBT module crowd the 512, the 1st neutral point IGBT module crowd the 534, the 2nd neutral point IGBT module crowd 556, minus side IGBT module crowd 578 and diode (led) module crowd 412,434, with the relation of positive side fuse 231, minus side fuse 232, neutral point fuse 233.In addition, the laminated bus bar 463 of Fig. 4 that states after (c) and the 2nd insulation wall 202 are not by the structural plane of souvenir.
Following structure has been shown: be provided with laminated bus bar 461 according to aligning the mode that is electrically connected between side IGBT module crowd 512 and the 1st neutral point IGBT module crowd 534 in Fig. 4 (b); In addition, according to the mode that is electrically connected between the 2nd neutral point IGBT module crowd 556 and the minus side IGBT module crowd 578 is provided with laminated bus bar 462.
In addition, Fig. 4 (c) show the 2nd insulation wall 202 and laminated bus bar 463 and with diode (led) module crowd 412,434, with the relation of positive side fuse 231, minus side fuse 232, neutral point fuse 233.
In addition; Although have the 1st insulation wall the 201, the 3rd insulation wall the 203, the 4th insulation wall 204, laminated bus bar 461,462 and positive side IGBT module crowd the 512, the 1st neutral point IGBT module crowd the 534, the 2nd neutral point IGBT module crowd 556, minus side IGBT module crowd 578, blocked and souvenir not by the 2nd insulation wall 202.
Although in Fig. 4 (c); The front souvenir that the 2nd insulation wall 202 is only being schemed; But in fact, the 2nd insulation wall 202 that kind as shown in Figure 2, covered the opposition side of a side with the 1st insulation wall 201 (Fig. 2, Fig. 4) the side, also have rear side and upper surface and lower surface.
In addition, as shown in Figure 2 and such as previously mentioned, " according in the taking-up place of the UAC251 of lead-out terminal to the mode that the 1st neutral point IGBT module crowd 534 and the 2nd neutral point IGBT module crowd 556 isolate, making insulation wall is the formation that bilayer makes a circulation." in Fig. 4 (c), blocked by range upon range of busbar 463 and souvenir not.
In addition, the laminated bus bar 463 shown in Fig. 4 (c) be used to take out Fig. 2 lead-out terminal UAC251 and be electrically connected.
Through the 1st insulation wall the 201, the 2nd insulation wall the 202, the 3rd insulation wall the 203, the 4th insulation wall 204 shown in Fig. 2 and Fig. 4 (a) and (b), (c), positive side IGBT module crowd the 512, the 1st neutral point IGBT module crowd the 534, the 2nd neutral point IGBT module crowd 556, minus side IGBT module crowd 578 isolate with diode (led) module crowd 412 and 434, positive side fuse 231, minus side fuse 232, neutral point fuse 233, laminated bus bar 463.
Therefore; To dispersing of the conductivity gas that causes because of breaking of positive side IGBT module crowd the 512, the 1st neutral point IGBT module crowd the 534, the 2nd neutral point IGBT module crowd 556, minus side IGBT module crowd's 578 IGBT element; Diode (led) module crowd 412,434 and positive side fuse 231, minus side fuse 232, neutral point fuse 233, laminated bus bar 463 are isolated, thereby can prevent that potential difference from surpassing the formation of the short circuit path of E.
In addition; Through the 3rd insulation wall the 203, the 4th insulation wall 204, can prevent that positive side IGBT module crowd the 512, the 1st neutral point IGBT module crowd the 534, the 2nd neutral point IGBT module crowd 556, minus side IGBT module crowd's 578 mutual potential difference from surpassing the formation of the short circuit path of E.
(other execution modes)
Although the switch element that uses IGBT to be used as in power conversion unit, using is illustrated; But also can use MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor; The metal oxide layer semiconductor field-effect transistor), BJT (Bipolar Junction Transistor; Bipolar junction transistor), BiCMOS (Bipolar Complementary Metal Oxide Semiconductor; Bipolar complementary metal oxide semiconductor), SiC (Silicon Carbide, carborundum) element or other suitable switch elements.
Although the execution mode under the situation that has been made as 4 or 8 in the number that the phase voltage of 1 phase in the power conversion unit is formed the IGBT module (crowd) that circuit possessed is illustrated, under the situation of the number that has further increased IGBT module (crowd), also can use the present invention.Especially under the progression of the series connection that increases the IGBT module comes situation that boosted voltage uses, can further increase insulation wall.
Although the laminated bus bar with in power conversion unit is illustrated, need not to be stacked, also can be general busbar (busbar).
Although in Fig. 1～Fig. 4; Situation about the IGBT module all being covered with insulation wall has been described; Even but only be the 1st insulation wall 101 of between diode (led) module crowd 121,122 and IGBT module crowd 111～114, isolating among Fig. 1, Fig. 3 for example, also produce effect.
In addition; Even only be Fig. 2; Be used among Fig. 4 to isolate positive side IGBT module crowd (512) and the 1st neutral point IGBT module crowd (534) the 3rd insulation wall 203, be used to isolate minus side IGBT module crowd (578) and the 2nd neutral point IGBT module crowd's (556) the 4th insulation wall 204, also produce effect.
Equally, even only be the 2nd insulation wall (102,202) among Fig. 1～Fig. 4, also produce effect.
Just, will the IGBT module all not cover.Exist the 1st～the 4th insulation wall near, prevent that the possibility that conductivity gas that the breakage/break because of the IGBT element causes disperses is improved.
Claims (10)
1. power conversion unit is characterized in that possessing:
The a plurality of switch elements that between the busbar of positive side DC power supply and output AC power, are connected in series;
The a plurality of switch elements that between the busbar of minus side DC power supply and output AC power, are connected in series;
With the diode element that is connected between neutral point direct current power supply and the said switch element; With
Prevent near said switch element to cause the insulation wall of short circuit path because of conductivity gas.
2. power conversion unit according to claim 1 is characterized in that,
Said insulation wall is arranged between said switch element and the said diode element.
3. power conversion unit according to claim 1 is characterized in that,
Said insulation wall is arranged between said switch element and the said busbar.
4. power conversion unit according to claim 1 is characterized in that,
Said power conversion unit also possesses: fuse, and it ends the overcurrent that flows through said switch element,
Said insulation wall is arranged between said switch element and the said fuse.
5. power conversion unit according to claim 1 is characterized in that,
Said insulation wall is arranged between said a plurality of switch element.
6. power conversion unit according to claim 1 is characterized in that,
Said insulation wall cover said switch element around.
7. power conversion unit according to claim 6 is characterized in that,
The said insulation wall on every side that covers said switch element makes up a plurality of insulation walls.
8. power conversion unit according to claim 1 is characterized in that,
Said a plurality of switch element is by constituting more than 4.
9. power conversion unit according to claim 1 is characterized in that,
Said switch element is made up of igbt.
10. power conversion unit according to claim 1 is characterized in that,
Said power conversion unit is transformed into three-phase ac power with direct current power.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011111948A JP5599757B2 (en) | 2011-05-19 | 2011-05-19 | Power converter |
| JP2011-111948 | 2011-05-19 |
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| Publication Number | Publication Date |
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| CN102790537A true CN102790537A (en) | 2012-11-21 |
| CN102790537B CN102790537B (en) | 2016-01-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210149687.6A Active CN102790537B (en) | 2011-05-19 | 2012-05-15 | Power conversion unit |
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| CN (1) | CN102790537B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105471308A (en) * | 2014-09-30 | 2016-04-06 | 株式会社日立制作所 | Power converter protector and protection method thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6303484B2 (en) * | 2013-12-20 | 2018-04-04 | 株式会社Ihi | Power converter |
| JP6796392B2 (en) * | 2016-04-14 | 2020-12-09 | 株式会社日立製作所 | 3-level power converter |
| JP7154907B2 (en) | 2018-09-14 | 2022-10-18 | 株式会社東芝 | semiconductor module |
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| US6028779A (en) * | 1997-11-25 | 2000-02-22 | Hitachi, Ltd. | Power inverter device |
| US20050281065A1 (en) * | 2004-06-22 | 2005-12-22 | Smc Electrical Products, Inc. | Inverter bridge controller implementing short-circuit protection scheme |
| CN101562083A (en) * | 2008-04-15 | 2009-10-21 | 通用电气公司 | Arc chute assembly for a circuit breaker |
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| JPH0439092U (en) * | 1990-07-27 | 1992-04-02 | ||
| DE19926979A1 (en) * | 1999-06-14 | 2001-01-04 | Siemens Ag | DC link converter |
| JP5095330B2 (en) * | 2007-09-20 | 2012-12-12 | 株式会社日立製作所 | Inverter device |
| JP5342254B2 (en) * | 2009-01-30 | 2013-11-13 | 株式会社日立製作所 | Power converter |
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| US6028779A (en) * | 1997-11-25 | 2000-02-22 | Hitachi, Ltd. | Power inverter device |
| US20050281065A1 (en) * | 2004-06-22 | 2005-12-22 | Smc Electrical Products, Inc. | Inverter bridge controller implementing short-circuit protection scheme |
| CN101562083A (en) * | 2008-04-15 | 2009-10-21 | 通用电气公司 | Arc chute assembly for a circuit breaker |
| JP2010088233A (en) * | 2008-10-01 | 2010-04-15 | Nidec Shibaura Corp | Control circuit of motor |
| CN201726333U (en) * | 2010-06-28 | 2011-01-26 | 青岛艾诺智能仪器有限公司 | High-speed inverse power supply |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105471308A (en) * | 2014-09-30 | 2016-04-06 | 株式会社日立制作所 | Power converter protector and protection method thereof |
| CN105471308B (en) * | 2014-09-30 | 2018-07-06 | 株式会社日立制作所 | The protective device of power-converting device and guard method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5599757B2 (en) | 2014-10-01 |
| JP2012244747A (en) | 2012-12-10 |
| CN102790537B (en) | 2016-01-13 |
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