CN102790126A - Etching technical method capable of improving efficiency of solar conductive glass - Google Patents
Etching technical method capable of improving efficiency of solar conductive glass Download PDFInfo
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- CN102790126A CN102790126A CN2011101306824A CN201110130682A CN102790126A CN 102790126 A CN102790126 A CN 102790126A CN 2011101306824 A CN2011101306824 A CN 2011101306824A CN 201110130682 A CN201110130682 A CN 201110130682A CN 102790126 A CN102790126 A CN 102790126A
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Abstract
The invention provides a processing device for improving capacity of a photovoltaic cell. The processing device comprises a vacuum heating cavity, a vacuum plasma enhanced chemical vapor deposition (PECVD) processing cavity and a vacuum cooling cavity, wherein the vacuum heating cavity is provided with a heater and a dry-type pump; the vacuum plasma enhanced chemical vapor deposition processing cavity is provided with a gas supply device, a high-frequency electrode and a molecular eddy pump; the vacuum cooling cavity comprises a cooling device and a dry-type pump. Different cavities provided in the invention are used, so as to simultaneously and differently process multiple objects to be processed, thereby improving capacity, shortening processing time, reducing cost and improving the capacity of the photovoltaic cell.
Description
Affiliated technical field
The present invention system is a kind of raising photovoltaic cell production capacity processing apparatus; Particularly close a kind of vacuum cavity that is provided with a plurality of different efficacies of what; In order to do and simultaneously can carry out different processed to plural groups thing to be processed; And then promote production capacity, shorten process time, reduce cost, reach a kind of raising photovoltaic cell production capacity processing apparatus.
Background technology
Along with the development of industries such as photoelectricity and semiconductor, on substrate, carry out the electric processing procedure mode of handling with the growth film of starching and obtain gradually to use widely, therefore; With plasma enhanced chemical vapor deposition method (PECVD), on large-area substrates, carry out film growth, be one of important technology in photoelectricity and the semi-conductor industry; And the PECVD processing procedure is auxiliary by the electricity slurry; Utilize the chemical reaction mode, the gas reaction that feeds is become solid, be deposited on the plated body (glass); But well-done, then pay particular attention to following some: reactor design, air-flow distribution, vacuum degree, heating-up temperature, uniformity and the control of electric pulp density ... Deng; Seeing also shown in the figure one, is now common on the market batch PECVD processing unit (plant), and it comprises: a vacuum cavity 1, and this vacuum cavity 1 porch is provided with gate 11, and this vacuum cavity 1 is provided with heater 12, high-field electrode 13 and gas supply device 14; A plurality of molecular eddy currents are helped Pu 15, and this molecular eddy current group Pu 15 joins with vacuum cavity 1; A plurality of dry types are helped Pu 16, and this dry type group Pu 16 joins with vacuum cavity 1; One electrode tray 17 can supply thing to be plated to place in this electrode tray 17; Only; Above-mentioned convention it " batch PECVD processing unit (plant) " is though it can help Pu 15 and dry type group Pu 16 by molecular eddy current; Vacuum cavity 1 is bled and reached vacuum state, again by heater 12 heating, required gas when by gas supply device 14 processing procedure being provided in addition; By high-field electrode 13 the required electric field of this gas that dissociates is provided again, in order to do and reach the PECVD processing procedure; So; Should " batch PECVD processing unit (plant) " the same time only can carry out the PECVD processed to the things of being placed in the electrode tray 17 to be plated, and in the whole PECVD processing place time be generally 4～6.5 hours, so during this period this [batch PECVD processing unit (plant) "; can not process other thing to be plated; and the user then need purchase identical " a batch PECVD processing unit (plant) " for other thing processing use to be plated separately as bigger production capacity need be arranged again, this often causes the lifting of processing procedure cost, production capacity not good again; and after handling a collection of thing to be plated at every turn; in the time of carrying out in the next group part, is somebody's turn to do " batch PECVD processing unit (plant) " and then need carries out complete bleeding once more and move to maintain vacuum state, also thereby more extends the processing procedure time.
Therefore; The present invention is directed to disappearances such as above-mentioned; Propose a kind of raising photovoltaic cell production capacity processing apparatus, but this photovoltaic cell production capacity processing apparatus provides a kind of machining object of treating of continous way to process, promptly be meant simultaneously plural groups thing to be processed is carried out different processed; Reach and promote production capacity, shorten process time, reduce the purpose of cost, solve problem and puzzlement that prior art produced.
Summary of the invention
The present invention's main purpose is providing a kind of raising photovoltaic cell production capacity processing apparatus; But the machining object of treating of its continous way is processed; Promptly be meant simultaneously plural groups thing to be processed is carried out different processed, and then reach and promote production capacity, shorten process time, reduce cost.
For realizing above-mentioned purpose, the present invention comprises:
One heating in vacuum cavity, it is provided with heater, dry type group Pu, and this heating in vacuum cavity porch is provided with the first vacuum seal bonding gate that can open and close again, and this heating in vacuum cavity outlet place is provided with the second vacuum seal bonding gate that can open and close;
One vacuum plasma enhanced chemical vapor deposition (PECVD) manufacture process cavity; It is provided with gas supply device, high-frequency electrode, molecular eddy current group Pu, is provided with the second vacuum seal bonding gate that can open and close again between this vacuum plasma enhanced chemical vapor deposition manufacture process cavity and heating in vacuum cavity;
One vacuum cooled cavity; It is provided with cooling device, molecular eddy current group Pu and dry type group Pu; And be provided with the 3rd vacuum seal bonding gate that can open and close between this vacuum cooled cavity and vacuum plasma enhanced chemical vapor deposition manufacture process cavity, this vacuum cooled cavity outlet place also is provided with the 4th vacuum seal bonding gate that can open and close again;
Do different processing by the present invention's different cavitys, in order to do can carrying out different processed to plural groups thing to be processed simultaneously, and then promote production capacity, shorten process time, reduce cost, reach a kind of purpose of raising photovoltaic cell production capacity processing apparatus.
Embodiment
The present invention's other features and advantage and the effect of being reached thereof can more manifest, and now the present invention are made conjunction with figs., specify as follows:
See also shown in the figure two; The present invention system provides a kind of raising photovoltaic cell production capacity processing apparatus; It comprises: a heating in vacuum cavity 2; This heating in vacuum cavity 2 is provided with heater 21, at least more than one dry type group Pu 23, and these heating in vacuum cavity 2 porch are provided with the first vacuum seal bonding gate 51 that can open and close again, and these heating in vacuum cavity 2 exits are provided with the second vacuum seal bonding gate 52 that can open and close; One vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3; This vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3 be provided with gas supply device 31, high-frequency electrode 32, at least more than one molecular eddy current group Pu 33 and; This vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3 and 2 of heating in vacuum cavitys are to be provided with the second vacuum seal bonding gate 52 that can open and close again, and these vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3 exits then are provided with the 3rd vacuum seal bonding gate 53; One vacuum cooled cavity 4; This vacuum cooled cavity 4 is provided with cooling device 41, at least more than one dry type group Pu 43; And this vacuum cooled cavity 4 and 3 of vacuum plasma enhanced chemical vapor deposition manufacture process cavities are to be provided with the 3rd vacuum seal bonding gate 53 that can open and close, and these vacuum cooled cavity 4 exits also are provided with the 4th vacuum seal bonding gate 54 that can open and close;
See also shown in the figure three; After the present invention starts, open the second vacuum seal bonding gate 52 and the 3rd vacuum seal bonding gate 53, and the first vacuum seal bonding gate 51 and the 4th vacuum seal bonding gate 54 are closed in advance; The individual vacuum cavity of startup simultaneously connects the dry type group Pu 23,43 of establishing and slightly takes out; Treat that chamber pressure reaches 10-2torr, then transfer to and start molecular eddy current group Pu 33 and carry out fine pumping when reaching 2e-6torr, can prepare the production that feeds intake;
See also shown in the figure four, be about to the second vacuum seal bonding gate 52 and the 3rd vacuum seal bonding gate 53 earlier close, and after heating in vacuum cavity 2 lost heart; Open the first vacuum seal bonding gate 51; After first tray 61 sent into heating in vacuum cavity 2, close the first vacuum seal bonding gate 51, bleeding immediately makes vacuum degree reach 4.6e-5torr; And starting heater 21 heating, to make temperature be that the time is about two hours more than 230 degree;
See also shown in the figure five, reach the vacuum degree and temperature of setting when vacuum heating cavity 2 after, can open the second vacuum seal bonding gate 52; First tray 61 is moved to vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3; When first tray 61 moved to vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3 fully, this second vacuum seal bonding gate 52 was closed immediately, at this moment; Required gas when this first tray 61 provides the PECVD processing procedure by these vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3 set gas supply devices 32; Required electric field when providing this gas to dissociate by high-frequency electrode 31 again, in order to do and this gas reaction is become solid, and be deposited on the thing of being placed in first group of electrode tray to be processed; In order to do and accomplish the PECVD processing procedure; About 2.5 hours of this processing procedure time, and when this first tray 61 carried out the PECVD processing procedure in this vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3, this heating in vacuum cavity 2 also lost heart simultaneously; And open the first vacuum seal bonding gate 51, with preparation second tray 62 is written into;
See also shown in the figure six, after second tray 62 loads heating in vacuum cavity 2 fully, close the first vacuum seal bonding gate 51; And this heating in vacuum cavity 2 begins to bleed and heats; When first tray 61 is accomplished the PECVD processing procedure in vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3 after, then open the 3rd vacuum seal bonding gate 53, preparation transfers load to vacuum cooled cavity 4 to cool off with this first tray 61; The vacuum degree and the temperature of second tray 62 also reach set point simultaneously; After treating that first tray 61 transfers load to vacuum cooled cavity 4 fully, close the 3rd vacuum seal bonding gate 53, and carry out 1.5 hours cooling by 41 pairs first trays of cooling device 61 in the vacuum cooled cavity 4; Open the second vacuum seal bonding gate 52 simultaneously, to prepare that second tray 62 is transferred load to vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3;
See also shown in the figure seven; After treating that second tray 62 transfers load to vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3 fully; Close the second vacuum seal bonding gate 52 immediately, this second tray 62 then carries out PECVD in vacuum plasma enhanced chemical vapor deposition manufacture process cavity handles, and this heating in vacuum cavity 2 then loses heart; And prepare to open the first vacuum seal bonding gate 51, with preparation the 3rd tray 63 is written into;
See also shown in the figure eight, after the 3rd tray 63 gets into heating in vacuum cavity 2, the same first vacuum seal bonding gate 51 of closing immediately; Likewise also bleed and heat, at this moment, first tray 61 cools off in vacuum cooled cavity 4; Second tray 62 carries out the PECVD processing procedure in vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3; 63 of the 3rd trays are bled in heating in vacuum cavity 2 and are heated, and in order to do in vacuum cooled cavity 4, cool off completion when first tray 61 after, can begin to lose heart; Open the 4th vacuum seal bonding gate 54 then, prepare first tray was gone out in 61 years;
See also shown in the figure nine, after first tray went out in 61 years, close the 4th vacuum seal bonding gate 54 immediately; And this vacuum cooled cavity 4 is bled again, about 40 minutes of time, reaches 8.5e-2torr in order to do the pressure that makes vacuum cooled cavity 4; At this moment, the PEVCD processing procedure of second tray 62 is also just accomplished, therefore; Open the 3rd vacuum seal bonding gate 53, second tray 62 is transferred load to vacuum cooled cavity 4, prepare to cool off; And after second tray 62 transfers load to vacuum cooled cavity 4 fully, close the 3rd vacuum seal bonding gate 53 immediately, and open the second vacuum seal bonding gate 52; And the 3rd tray 63 transferred load to vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3, after the 3rd tray 63 transfers load to vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3 fully, close the second vacuum seal bonding gate 52 immediately after; After 2 of this heating in vacuum cavitys lose heart, and open the first vacuum seal bonding gate 51, the 4th tray 64 is written into preparation; After treating that the 4th tray 64 loads, then close the first vacuum seal bonding gate 51, so perseveration; In order to do can be simultaneously and successional plural groups thing to be processed is carried out different processed, reach and promote production capacity, shorten process time, reduce cost, and the vacuum plasma enhanced chemical vapor deposition manufacture process cavity 3 of the present invention centre; After starting, remain in high vacuum state always; Do not contact with atmosphere, therefore, comparatively stable on processing procedure; So the product yields also gets a promotion, and accomplishes a kind of purpose of raising photovoltaic cell production capacity processing apparatus.
For making the present invention show progressive and practicality more, now with commonly use that to do a comparative analysis following:
Located by prior art:
1, long processing time.
2, production capacity is low.
3, cost is high.
4, yields is relatively poor.
Advantage of the present invention:
1, process time is short.
2, production capacity is high.
3, cost is low.
4, yields is good.
In sum, the present invention is breaking through under the previous technical pattern, has reached the effect of institute's desire enhancements really, and also non-be familiar with this art easy full of beard reach.
Brief description of drawingsfig
Fig. 1 system is the batch PECVD processing unit (plant) of general convention.
Fig. 2 system is this creation structural representation.
Action sketch map when Fig. 3 system starts for this creation.
Fig. 4 system is this creation first step action sketch map.
Fig. 5 system is this creation second step action sketch map.
Fig. 6 system creates the 3rd step action sketch map for this.
Fig. 7 system creates the 4th step action sketch map for this.
Fig. 8 system creates the 5th step action sketch map for this.
Fig. 9 system creates the 6th step action sketch map for this.
The primary clustering symbol description
1 ... Vacuum cavity
11 ... Gate
12 ... High-field electrode
13 ... Gas supply device
14 ... Heater
15 ... Molecular eddy current group Pu
16 ... Dry type group Pu
17 ... The electrode tray
2 ... The heating in vacuum cavity
21 ... Heater
22 ... Dry type group Pu
3 ... Vacuum plasma enhanced chemical vapor deposition manufacture process cavity
31 ... High-frequency electrode
32 ... Gas supply device
33 ... Molecular eddy current group Pu
4 ... The vacuum cooled cavity
41 ... Cooling device
42 ... Dry type group Pu
51 ... The first vacuum seal bonding gate
52 ... The second vacuum seal bonding gate
53 ... The 3rd vacuum seal bonding gate
54 ... The 4th vacuum seal bonding gate
61 ... First tray
62 ... Second tray
63 ... The 3rd tray
64 ... The 4th tray
Claims (4)
1. one kind is improved photovoltaic cell production capacity processing apparatus, and this invention characteristic is, comprises:
One heating in vacuum cavity, it is provided with heater and at least more than one dry type group Pu, and this heating in vacuum cavity porch is provided with the first vacuum seal bonding gate that can open and close again, and heating in vacuum cavity outlet place is provided with the second vacuum seal bonding gate that can open and close;
One vacuum plasma enhanced chemical vapor deposition manufacture process cavity; It is provided with gas supply device, high-frequency electrode and at least more than one molecular eddy current group Pu; Be provided with the second vacuum seal bonding gate that can open and close again between this vacuum plasma enhanced chemical vapor deposition manufacture process cavity and heating in vacuum cavity, and this vacuum plasma enhanced chemical vapor deposition manufacture process cavity exit is provided with the 3rd vacuum seal bonding gate that can open and close;
One vacuum cooled cavity; It is provided with cooling device and at least more than one dry type group Pu; Be provided with the 3rd vacuum seal bonding gate that can open and close again between this vacuum cooled cavity and vacuum plasma enhanced chemical vapor deposition manufacture process cavity, and this vacuum cooled cavity outlet place also is provided with the 4th vacuum seal bonding gate that can open and close.
2. according to the 1st said raising photovoltaic cell production capacity processing apparatus of claim, wherein this heating in vacuum chamber vacuum degree is that 7.2e-2torr, temperature are that 230 degree are above, the time is two hours.
3. according to the 1st said raising photovoltaic cell production capacity processing apparatus of claim, wherein this vacuum plasma enhanced chemical vapor deposition manufacture process cavity processing procedure time is 2.5 hours.
4. according to the 1st said raising photovoltaic cell production capacity processing apparatus of claim, wherein this vacuum cooled cavity cooling time is 1.5 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101306824A CN102790126A (en) | 2011-05-19 | 2011-05-19 | Etching technical method capable of improving efficiency of solar conductive glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101306824A CN102790126A (en) | 2011-05-19 | 2011-05-19 | Etching technical method capable of improving efficiency of solar conductive glass |
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| Publication Number | Publication Date |
|---|---|
| CN102790126A true CN102790126A (en) | 2012-11-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101306824A Pending CN102790126A (en) | 2011-05-19 | 2011-05-19 | Etching technical method capable of improving efficiency of solar conductive glass |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110643974A (en) * | 2019-09-23 | 2020-01-03 | 苏州迈正科技有限公司 | Tray return cleaning mechanism and method for cleaning tray |
Citations (5)
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|---|---|---|---|---|
| US5935395A (en) * | 1995-11-08 | 1999-08-10 | Mitel Corporation | Substrate processing apparatus with non-evaporable getter pump |
| CN201069777Y (en) * | 2007-07-10 | 2008-06-04 | 仕贯真空科技股份有限公司 | Process device for improving productivity solar battery |
| CN101339967A (en) * | 2008-08-19 | 2009-01-07 | 上海曙海太阳能有限公司 | Two-chamber alternative amorphous silicon photovoltaic film chemical vapour deposition equipment |
| CN101736317A (en) * | 2008-11-05 | 2010-06-16 | 财团法人工业技术研究院 | Atomic layer deposition equipment |
| CN101845621A (en) * | 2010-06-07 | 2010-09-29 | 刘忆军 | Large-area flat-plate type plasma reinforced chemical vapor deposition system |
-
2011
- 2011-05-19 CN CN2011101306824A patent/CN102790126A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5935395A (en) * | 1995-11-08 | 1999-08-10 | Mitel Corporation | Substrate processing apparatus with non-evaporable getter pump |
| CN201069777Y (en) * | 2007-07-10 | 2008-06-04 | 仕贯真空科技股份有限公司 | Process device for improving productivity solar battery |
| CN101339967A (en) * | 2008-08-19 | 2009-01-07 | 上海曙海太阳能有限公司 | Two-chamber alternative amorphous silicon photovoltaic film chemical vapour deposition equipment |
| CN101736317A (en) * | 2008-11-05 | 2010-06-16 | 财团法人工业技术研究院 | Atomic layer deposition equipment |
| CN101845621A (en) * | 2010-06-07 | 2010-09-29 | 刘忆军 | Large-area flat-plate type plasma reinforced chemical vapor deposition system |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110643974A (en) * | 2019-09-23 | 2020-01-03 | 苏州迈正科技有限公司 | Tray return cleaning mechanism and method for cleaning tray |
| CN110643974B (en) * | 2019-09-23 | 2021-11-05 | 苏州迈正科技有限公司 | Tray return cleaning mechanism and method for cleaning tray |
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Application publication date: 20121121 |