CN102789949B - 一种等离子反应器 - Google Patents

一种等离子反应器 Download PDF

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Publication number
CN102789949B
CN102789949B CN201210022296.8A CN201210022296A CN102789949B CN 102789949 B CN102789949 B CN 102789949B CN 201210022296 A CN201210022296 A CN 201210022296A CN 102789949 B CN102789949 B CN 102789949B
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China
Prior art keywords
electrode
electrostatic chuck
plasma reactor
radio
electric wire
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CN201210022296.8A
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Chinese (zh)
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CN102789949A (zh
Inventor
欧阳亮
陶铮
倪图强
松尾裕史
尹志尧
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Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.
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Advanced Micro Fabrication Equipment Inc Shanghai
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Priority to CN201210022296.8A priority Critical patent/CN102789949B/zh
Priority to TW101143552A priority patent/TW201334113A/zh
Publication of CN102789949A publication Critical patent/CN102789949A/zh
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Publication of CN102789949B publication Critical patent/CN102789949B/zh
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  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201210022296.8A 2012-02-01 2012-02-01 一种等离子反应器 Active CN102789949B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201210022296.8A CN102789949B (zh) 2012-02-01 2012-02-01 一种等离子反应器
TW101143552A TW201334113A (zh) 2012-02-01 2012-11-21 一種設有埋入射頻電極的靜電吸盤

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210022296.8A CN102789949B (zh) 2012-02-01 2012-02-01 一种等离子反应器

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CN102789949A CN102789949A (zh) 2012-11-21
CN102789949B true CN102789949B (zh) 2015-06-24

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CN (1) CN102789949B (enExample)
TW (1) TW201334113A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104112638B (zh) * 2013-04-22 2017-07-18 中微半导体设备(上海)有限公司 一种等离子体反应室及其静电夹盘
CN110600357B (zh) * 2019-11-14 2020-03-31 北京北方华创微电子装备有限公司 用等离子体加工系统进行加工的方法及等离子体加工系统

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09213778A (ja) * 1996-02-02 1997-08-15 Fujitsu Ltd 半導体ウェハ処理装置及び半導体ウェハ処理方法
CN1608317A (zh) * 2001-03-30 2005-04-20 拉姆研究有限公司 真空等离子体处理器及其操作方法
CN101123200A (zh) * 2006-08-10 2008-02-13 东京毅力科创株式会社 等离子体处理装置用的载置台以及等离子体处理装置
CN101137770A (zh) * 2003-12-16 2008-03-05 兰姆研究公司 用于均匀性控制的分段射频电极装置和方法
CN101165855A (zh) * 2006-10-17 2008-04-23 东京毅力科创株式会社 基板平台和等离子处理装置
CN102098862A (zh) * 2009-12-10 2011-06-15 北京北方微电子基地设备工艺研究中心有限责任公司 一种下电极装置及应用该下电极装置的等离子体处理设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070215284A1 (en) * 2006-03-16 2007-09-20 Tokyo Electron Limited Plasma processing apparatus and electrode assembly for plasma processing apparatus
US7879731B2 (en) * 2007-01-30 2011-02-01 Applied Materials, Inc. Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources
US8607731B2 (en) * 2008-06-23 2013-12-17 Applied Materials, Inc. Cathode with inner and outer electrodes at different heights
KR101058748B1 (ko) * 2008-09-19 2011-08-24 주식회사 아토 정전척 및 그 제조방법
US20100297347A1 (en) * 2009-04-24 2010-11-25 Applied Materials, Inc. Substrate support having side gas outlets and methods
TWI395289B (zh) * 2009-05-15 2013-05-01 Advanced Micro Fab Equip Inc An electrostatic chuck device, a plasma processing device, and a method of manufacturing an electrostatic chuck device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09213778A (ja) * 1996-02-02 1997-08-15 Fujitsu Ltd 半導体ウェハ処理装置及び半導体ウェハ処理方法
CN1608317A (zh) * 2001-03-30 2005-04-20 拉姆研究有限公司 真空等离子体处理器及其操作方法
CN101137770A (zh) * 2003-12-16 2008-03-05 兰姆研究公司 用于均匀性控制的分段射频电极装置和方法
CN101123200A (zh) * 2006-08-10 2008-02-13 东京毅力科创株式会社 等离子体处理装置用的载置台以及等离子体处理装置
CN101165855A (zh) * 2006-10-17 2008-04-23 东京毅力科创株式会社 基板平台和等离子处理装置
CN102098862A (zh) * 2009-12-10 2011-06-15 北京北方微电子基地设备工艺研究中心有限责任公司 一种下电极装置及应用该下电极装置的等离子体处理设备

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CN102789949A (zh) 2012-11-21
TWI495034B (enExample) 2015-08-01
TW201334113A (zh) 2013-08-16

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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.

Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc.