CN102789945A - Hot-cathode ion source system for generating strip-shaped beam - Google Patents
Hot-cathode ion source system for generating strip-shaped beam Download PDFInfo
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- CN102789945A CN102789945A CN2011101278519A CN201110127851A CN102789945A CN 102789945 A CN102789945 A CN 102789945A CN 2011101278519 A CN2011101278519 A CN 2011101278519A CN 201110127851 A CN201110127851 A CN 201110127851A CN 102789945 A CN102789945 A CN 102789945A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/083—Beam forming
Abstract
The invention discloses a hot-cathode ion source system for generating a strip-shaped beam. The hot-cathode ion source system comprises a discharge chamber, a cathode unit composed of a hot cathode and a pair of cathodes, and a lead-out system, wherein the lead-out system comprises a lead-out area with lead-out slits; quantity of the lead-out slits is more than two, and the lead-out slits are parallel in the lead-out area. According to the hot-cathode ion source system, not only can beam strength of a lead-out ion beam and distribution uniformity of the beam strength of the lead-out ion beam be obviously improved, but also optical quality of the lead-out ion beam can be better ensured.
Description
Technical field
The present invention relates to a kind of hot-cathode ion source system, particularly relate to a kind of hot-cathode ion source system that is used to produce banded line.
Background technology
Ion injection method is used for introducing the target substrate to atom that is referred to as impurity usually or molecule, thereby changes the physics and the chemical property of substrate material.In many manufacturings field, especially in the manufacturing of semiconductor product and solar battery product, all need utilize ribbon ion beam to come that silicon wafer is carried out ion usually and inject processing.
Be used for carrying out the ion implantor that ion injects and all be provided with the ion source system that is used to produce and draw ion beam.Had the ion source system of number of different types at present, for example illustrated in figures 1 and 2 just is a kind of typical hot-cathode ion source system.As shown in Figure 1; The cathode electrode unit that this hot-cathode ion source system includes an arc chamber 1 and is made up of a hot cathode 2 and a target 3; This arc chamber 1 is one to be used for gas discharge and to produce the vacuum chamber of the desired ion be plasma 6 states; This hot cathode 2 is used to produce the required electronics of gas discharge, and 4 on filament in it is used to produce the electronics of launching and bombarding this hot cathode 2, and this target 3 then is used to reflect the electronics that this hot cathode 2 emits.This hot-cathode ion source system also comprises an extraction system, and this extraction system has the zone of drawing, and this extraction system is utilized electric field that the ion in this arc chamber 1 is drawn location at this and drawn, thereby obtains an ion beam line.As shown in Figure 2; Obtain at needs under the situation of banded line; Common way be this draw be provided with in the zone one draw the seam 5; Ion beam is drawn the seam 5 by being drawn from this, can obtain banded line just wherein utilize this to draw the long and narrow shape of seam 5 to the effect of contraction of ion beam cross section, and this zone (shown in the frame of broken lines among Fig. 2) of drawing seam 5 places was this and drew the zone this moment.
In this hot-cathode ion source system as depicted in figs. 1 and 2, exist following defective:
The beam intensity of the ion beam of 1, drawing is big inadequately, can't satisfy the demand of the ion injection of high beam intensity.
At first; Only utilize a single seam of drawing to draw ion beam in the existing design; Therefore it is less to be actually used in the effective area of drawing ion beam; And in order to increase this effective area, common way is that to increase the seam of drawing seam wide, but this can produce adverse influence to the whole ion source system especially optical characteristics of extraction system again.
Secondly; This hot cathode 2 need be heated to a certain degree can launch electronics; Therefore the size of this hot cathode 2 can not design too much; And on the other hand, in this arc chamber 1, only have the plasma density in the zone that receives this hot cathode 2 and this target 3 effects just can be higher, comparatively the plasma density in the zone at edge then can be relatively low; This will cause only can be from centre (corresponding to receiving the zone of this hot cathode 2 with these target 3 effects) the higher ion beam of educt beaming flow intensity of this arc chamber 1, and the beam intensity of drawing from the edge then can be lower.
In addition, because the design limit of existing ion implantor, in an ion implantor, only can adopt an ion source system usually but not a plurality of, therefore also can't improve the beam intensity of drawing through the quantity that increases the ion source system simply at present.
The uniformity that the beam intensity of the ion beam of 2, drawing distributes is not good.Except the beam intensity of locating to draw owing to the limited edge that causes in this hot cathode 2 and the zone of action of this target 3 was hanged down, space charge effect also can have a negative impact to the uniformity of banded line on cross section is vertical.
Summary of the invention
The technical problem that the present invention will solve is in order to overcome the also not good defective of uniformity that beam intensity is big inadequately and beam intensity distributes of the ion beam that the hot-cathode ion source system that is used to produce banded line of the prior art drawn, to provide a kind of and can improve the beam intensity of the ion beam of being drawn and the inhomogeneity hot-cathode ion source system that is used to produce banded line that beam intensity distributes significantly.
The present invention solves above-mentioned technical problem through following technical proposals: a kind of hot-cathode ion source system that is used to produce banded line; A cathode electrode unit and an extraction system that this hot-cathode ion source system comprises an arc chamber, is made up of a hot cathode and a target; This extraction system has one and is provided with the zone of drawing of drawing seam; Its characteristics are that this quantity of drawing seam is more than two, and those are drawn and are sewn on this and draw in the zone and be parallel to each other.
Preferably, this quantity of drawing seam is two or three.
Preferably, this quantity of drawing seam is more than four, and this draw the zone the central part place draw between the seam the gap greater than the edge place of drawing the zone at this draw seam between the gap; And/or this quantity of drawing seam is more than three, and it is wide wide less than the seam of drawing seam that is positioned at this place, edge of drawing the zone to be positioned at this seam of drawing seam of drawing regional central part place.
Preferably, those gap locations of drawing between the seam are provided with a plurality of fairleads.
Preferably, this fairlead is shaped as circle, regular polygon, ellipse or rectangle.
Preferably, be positioned at the size of the size of this fairlead of drawing regional central part place less than the fairlead that is positioned at this place, edge of drawing the zone; And/or, be positioned at the distribution density of the distribution density of this fairlead of drawing regional central part place less than the fairlead that is positioned at this place, edge of drawing the zone.
Preferably, the quantity of this cathode electrode unit is one.
Preferably, the quantity of this cathode electrode unit is more than two.
Preferably, the quantity of this cathode electrode unit is two.
Preferably, the hot cathode of these two cathode electrode units is positioned at the homonymy of this arc chamber.
Preferably, the hot cathode of these two cathode electrode units lays respectively at the offside of this arc chamber.
Positive progressive effect of the present invention is:
1, the present invention more draws seam through design in drawing the zone; Increased the effective area that is actually used in educt beaming flow significantly; Under the situation that plasma density in arc chamber remains unchanged, the beam intensity of the banded line of being drawn will significantly improve thereupon.
2, the present invention also preferably is provided with fairlead at the gap location of drawing between the seam.Because obviously can be less than the inner beam intensity of each bigger sub-line from each beam intensity of drawing between the bigger sub-line of drawing the seam; If utilize and draw multi beam more simultaneously than boy's line at a plurality of fairleads of drawing the gap location between the seam this moment; These just can remedy reinforcement to the lower zone of original beam intensity well than boy's line, thereby make that on the whole the banded line of drawing all has high beam intensity uniformity on whole line cross section.
3, the present invention has also preferably increased the quantity of cathode electrode unit, and this will help in arc chamber, to produce more desired ion, thereby increases the concentration of the plasma in it.Under the constant or higher situation of the ability of drawing of extraction system, the beam intensity of the ion beam that this obviously can guarantee to draw is significantly improved.In addition; The increase of cathode electrode unit quantity also will help to expand the transverse area that can actually draw ion beam in the arc chamber; Thereby draw the uniformity between the ion amount of drawing of seam from improving difference in essence, obtain the ion beam of beam intensity more even distribution thus.
The raising of the beam intensity distributing homogeneity of the ion beam of 4, being drawn means that also the optical characteristics of whole ion source system, especially extraction system has obtained comparatively independently to optimize, and this has just guaranteed the optical quality of the ion beam that obtains.
Description of drawings
Fig. 1 is the arc chamber of the existing ion source system that is used to produce banded line and the sketch map of cathode electrode unit, also is the sketch map of first kind of execution mode of the arc chamber of the ion source system that is used to produce banded line of the present invention and cathode electrode unit simultaneously.
Fig. 2 is the existing sketch map of drawing the zone that is used to produce the ion source system of banded line.
Fig. 3 is the sketch map of first kind of execution mode of drawing the zone of the ion source system that is used to produce banded line of the present invention.
Fig. 4 is the sketch map of second kind of execution mode of drawing the zone of the ion source system that is used to produce banded line of the present invention.
Fig. 5 is the sketch map of the third execution mode of drawing the zone of the ion source system that is used to produce banded line of the present invention.
Fig. 6 is the sketch map of second kind of execution mode of the arc chamber of the ion source system that is used to produce banded line of the present invention and cathode electrode unit.
Fig. 7 is the sketch map of the third execution mode of the arc chamber of the ion source system that is used to produce banded line of the present invention and cathode electrode unit.
Embodiment
Provide preferred embodiment of the present invention below in conjunction with accompanying drawing, to specify technical scheme of the present invention.
With reference to figure 1 and Fig. 3-7, the hot-cathode ion source system that this is used to produce banded line of the present invention at first likewise includes arc chamber 1, cathode electrode unit and the extraction system that plasma 6 is arranged in existing design.This cathode electrode unit is made up of a hot cathode 2 and a target 3 equally, wherein is provided with filament 4 equally in this hot cathode 2.This extraction system then has the zone of drawing (in Fig. 3, Fig. 4 and Fig. 5 this draw zone represent by frame of broken lines) equally, and this is drawn to be provided with too in the zone and draws seam 5.
But different with prior art is: in the present invention, this is drawn seam quantity of 5 and increases to more than two, preferably is two or three, and those draw seam and all in this draws the zone, be arranged in parallel, for example Fig. 3, Fig. 4 and shown in Figure 5.What will explain is that " being parallel to each other " among this paper both comprised those and drawn situation about strictly being parallel to each other between the seam, also comprised those and drew situation about being parallel to each other approx between the seam.
Compare with a mode of drawing seam only is set, the effective area that is actually used in educt beaming flow among the present invention has obtained significant increase, under the situation that the plasma density in arc chamber remains unchanged, and obviously can the bigger ion beam of educt beaming flow intensity.
Further; Because when ion is drawn from this arc chamber 1 under the electric field action of this extraction system; Its ion concentration that always trends towards being rendered as the place, centre is higher, and the ion concentration at place, edge is lower, and this beam intensity that will cause being drawn is even inadequately.Therefore in order to reduce this spontaneous inhomogeneities as much as possible; Draw seam quantity of 5 when this and reach four when above, preferable be designed to this draw the zone the central part place draw between the seam the gap greater than the place, edge of drawing the zone at this draw seam between the gap; And/or, to draw seam quantity of 5 when this and reach three when above, it is wide wide less than the seam of drawing seam that is positioned at this place, edge of drawing the zone that preferable being designed to is positioned at the seam of drawing seam at this central part place of drawing the zone.
Yet; Obviously can be from each beam intensity of drawing between the bigger sub-line of drawing the seam 5 less than the inner beam intensity of each bigger sub-line; Therefore carry out fine adjustment further for the beam intensity to whole ion beam distributes, can also a plurality of fairleads 7 be set at those gap locations of drawing between the seam.So; Each draw the seam draw a branch of bigger sub-line in; Each fairlead 7 also will be drawn a branch of than boy's line; These can remedy reinforcement to the lower zone of original beam intensity well than boy's line, thereby make that on the whole the banded line of drawing all has high beam intensity uniformity on whole line cross section.
The present invention to the concrete shape of those fairleads 7, quantity, size and position or the like are set all less than restriction; The concrete condition that those skilled in the art can distribute according to the beam intensity of ion beam; Design the various parameters of fairlead targetedly; So that the suitable reinforcement that remedies is carried out in the lower zone of beam intensity in the ion beam, thereby obtain beam intensity uniform ion bundle.Certainly; The present invention not merely is applicable to the occasion that produces even line; When the beam intensity to ion beam is distributed with specific (special) requirements; Also can design shape, quantity, size and the position of fairlead according to this specific (special) requirements targetedly, distribute so that the ion beam of drawing satisfies this special beam intensity.The concrete design process of above-mentioned various parameters to fairlead all is to realize easily to those skilled in the art, does not give unnecessary details so do not do at this.Wherein, The shape of those fairleads 7 for example can be circular (as shown in Figure 4), various regular polygon, ellipse (as shown in Figure 5) or rectangle or the like; Certainly, fairlead 7 that in one embodiment both can a kind of shape of single employing also can mix the fairlead 7 that adopts multiple shape.
When from this arc chamber 1, being drawn under the electric field action of this extraction system owing to ion equally; It is higher that it always trends towards being rendered as the ion concentration of locating in the centre; And the ion concentration at place, edge is lower; Therefore in order to reduce this spontaneous inhomogeneities further as far as possible; The preferred configuration of those fairleads 7 is: be positioned at the size of the size of this fairlead of drawing regional central part place less than the fairlead that is positioned at this place, edge of drawing the zone, with reference to shown in Figure 5; And/or, be positioned at the distribution density of the distribution density of this fairlead of drawing regional central part place, with reference to shown in Figure 4 less than the fairlead that is positioned at this place, edge of drawing the zone.
In order to improve the beam intensity of the ion beam of drawing; Except increase is actually used in the effective area of educt beaming flow; Can also consider to improve the concentration of the plasma 6 in this arc chamber 1 further; This can realize through designing plural this cathode electrode unit, wherein, preferably adopt two these cathode electrode units.When the quantity of this cathode electrode unit increases, can realize following benefit:
1, the density and the total amount of the plasma 6 in this arc chamber 1 have been increased; Under the prerequisite that the ability of drawing of this extraction system has in the present invention significantly improved; These two effect mutual superposition obviously can improve the beam intensity of the ion beam of drawing more significantly.
2, more cathode electrode unit will make the area distribution that receives hot cathode and target effect in this arc chamber 1 get more extensive; This can make ion when from this arc chamber 1, being drawn; In the zone at off-center position comparatively, also can obtain higher beam intensity, thus the natural inhomogeneities when on the source, improving line and drawing.
If 3, this hot-cathode ion source system of the present invention only need draw and the existing line that designs same intensity in some application scenarios; Then can reduce the operating voltage and the operating current of many associated components such as hot cathode and target, thereby reach the purpose that prolongs the ion source lifetime of system with respect to existing equipment.
4, the present invention does not change the size of each cathode electrode unit, so this hot-cathode ion source system still can accomplish in original time from starting to the set-up procedure of steady operation; If adopt existing design to draw the beam intensity of magnitude of the present invention by force, then mean the size of the single cathode electrode unit of having to increase significantly, this can significantly carry undoubtedly and drag the slow ion origin system from starting to stable set-up procedure.
Below only be illustrated with 1～6 couple of the present invention of embodiment, in these embodiment, the size of respectively drawing seam all exemplarily is set at equal, but the present invention does not receive the restriction of this setting.
Embodiment 1
The design of the cathode electrode unit in the present embodiment is still as shown in Figure 1; It is identical with existing design; It is then as shown in Figure 3 that this of this extraction system drawn region design, wherein this draw be designed with in the zone two be parallel to each other draw seam, improve the beam intensity of the ion beam of drawing with this.
The design of the cathode electrode unit in the present embodiment is still as shown in Figure 1, and this of this extraction system drawn region design then like Fig. 4 or shown in Figure 5.Present embodiment has been set up a plurality of fairleads at two gap locations of drawing between the seam further on the basis of embodiment 1; And be positioned at this size of drawing the fairlead of locating in regional centre or distribution density size or distribution density less than the fairlead that is positioned at this place, edge of drawing the zone; Distribute with this beam intensity of coming to finely tune further the ion beam of drawing, thus the ion beam of acquisition beam intensity more even distribution.
The design of the cathode electrode unit in the present embodiment is as shown in Figure 6, and it is then still as shown in Figure 3 that this of this extraction system drawn region design.Present embodiment increases to two with the quantity of this cathode electrode unit further on the basis of embodiment 1; And the hot cathode 2 of these two cathode electrode units is positioned at the homonymy of this arc chamber 1; Improve the concentration and the total amount of the plasma 6 in this arc chamber 1 with this; Thereby improve the beam intensity of the ion beam of drawing further; And since two cathode electrode units compared to single cathode electrode unit can Fig. 6 vertically on to this arc chamber 1 in bigger zone generation effect, thereby can also improve the natural inhomogeneities that the beam intensity of the ion beam of drawing distributes.
The design of the cathode electrode unit in the present embodiment is still as shown in Figure 6, and this of this extraction system drawn region design then still like Fig. 4 or shown in Figure 5.Present embodiment has been set up a plurality of fairleads at two gap locations of drawing between the seam further on the basis of embodiment 3; And be positioned at this size of drawing the fairlead of locating in regional centre or distribution density size or distribution density less than the fairlead that is positioned at this place, edge of drawing the zone; Distribute with this beam intensity of coming to finely tune further the ion beam of drawing, thereby obtain beam intensity uniform ion bundle more.
The design of the cathode electrode unit in the present embodiment is as shown in Figure 7, and it is then still as shown in Figure 3 that this of this extraction system drawn region design.Present embodiment is changed into the design direction of these two cathode electrode units on the basis of embodiment 3 and is made their hot cathode 2 lay respectively at the offside of this arc chamber 1.According to the common practise in this area; Do not changing under the prerequisite of drawing effect; Because the size of this target 3 can suitably be dwindled; Therefore this embodiment compared to embodiment 3 can reduce this arc chamber 1 Fig. 7 vertically on design size, and correspondingly reduce this two gaps of drawing between the seam, and then improve the uniformity of the ion beam of drawing.
The design of the cathode electrode unit in the present embodiment is still as shown in Figure 7, and this of this extraction system drawn region design then still like Fig. 4 or shown in Figure 5.Present embodiment has been set up a plurality of fairleads at two gap locations of drawing between the seam further on the basis of embodiment 5; And be positioned at this size of drawing the fairlead of locating in regional centre or distribution density size or distribution density less than the fairlead that is positioned at this place, edge of drawing the zone; Distribute with this beam intensity of coming to finely tune further the ion beam of drawing, thereby obtain beam intensity uniform ion bundle more.
In sum; The hot-cathode ion source system that this is used to produce banded line of the present invention not only can improve the beam intensity of the ion beam of being drawn significantly, improve the beam intensity distributing homogeneity of the ion beam of being drawn significantly, the optical quality of the ion beam that can also guarantee to be drawn.
Though more than described embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is limited appended claims.Those skilled in the art can make numerous variations or modification to these execution modes under the prerequisite that does not deviate from principle of the present invention and essence, but these changes and modification all fall into protection scope of the present invention.
Claims (11)
1. hot-cathode ion source system that is used to produce banded line; A cathode electrode unit and an extraction system that this hot-cathode ion source system comprises an arc chamber, is made up of a hot cathode and a target; This extraction system has one and is provided with the zone of drawing of drawing seam; It is characterized in that this quantity of drawing seam is more than two, those are drawn and are sewn on this and draw in the zone and be parallel to each other.
2. the hot-cathode ion source system that is used to produce banded line as claimed in claim 1 is characterized in that, this quantity of drawing seam is two or three.
3. the hot-cathode ion source system that is used to produce banded line as claimed in claim 1; It is characterized in that; This quantity of drawing seam is more than four, and this draw the zone the central part place draw between the seam the gap greater than the edge place of drawing the zone at this draw seam between the gap; And/or this quantity of drawing seam is more than three, and it is wide wide less than the seam of drawing seam that is positioned at this place, edge of drawing the zone to be positioned at this seam of drawing seam of drawing regional central part place.
4. like any described hot-cathode ion source system that is used to produce banded line among the claim 1-3, it is characterized in that those gap locations of drawing between the seam are provided with a plurality of fairleads.
5. the hot-cathode ion source system that is used to produce banded line as claimed in claim 4 is characterized in that, this fairlead be shaped as circle, regular polygon, ellipse or rectangle.
6. the hot-cathode ion source system that is used to produce banded line as claimed in claim 4 is characterized in that, is positioned at the size of the size of this fairlead of drawing regional central part place less than the fairlead that is positioned at this place, edge of drawing the zone; And/or, be positioned at the distribution density of the distribution density of this fairlead of drawing regional central part place less than the fairlead that is positioned at this place, edge of drawing the zone.
7. like any described hot-cathode ion source system that is used to produce banded line among the claim 1-6, it is characterized in that the quantity of this cathode electrode unit is one.
8. like any described hot-cathode ion source system that is used to produce banded line among the claim 1-6, it is characterized in that the quantity of this cathode electrode unit is more than two.
9. the hot-cathode ion source system that is used to produce banded line as claimed in claim 8 is characterized in that the quantity of this cathode electrode unit is two.
10. the hot-cathode ion source system that is used to produce banded line as claimed in claim 9 is characterized in that the hot cathode of these two cathode electrode units is positioned at the homonymy of this arc chamber.
11. the hot-cathode ion source system that is used to produce banded line as claimed in claim 9 is characterized in that the hot cathode of these two cathode electrode units lays respectively at the offside of this arc chamber.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101278519A CN102789945A (en) | 2011-05-17 | 2011-05-17 | Hot-cathode ion source system for generating strip-shaped beam |
| PCT/CN2011/078074 WO2012155395A1 (en) | 2011-05-17 | 2011-08-05 | Hot cathode ion source system for generating a ribbon ion beam |
| CN2011800697405A CN103477414A (en) | 2011-05-17 | 2011-08-05 | Hot cathode ion source system for generating a ribbon ion beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101278519A CN102789945A (en) | 2011-05-17 | 2011-05-17 | Hot-cathode ion source system for generating strip-shaped beam |
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| CN102789945A true CN102789945A (en) | 2012-11-21 |
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| CN2011101278519A Pending CN102789945A (en) | 2011-05-17 | 2011-05-17 | Hot-cathode ion source system for generating strip-shaped beam |
| CN2011800697405A Pending CN103477414A (en) | 2011-05-17 | 2011-08-05 | Hot cathode ion source system for generating a ribbon ion beam |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011800697405A Pending CN103477414A (en) | 2011-05-17 | 2011-08-05 | Hot cathode ion source system for generating a ribbon ion beam |
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| CN (2) | CN102789945A (en) |
| WO (1) | WO2012155395A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105575748A (en) * | 2015-12-11 | 2016-05-11 | 中国电子科技集团公司第四十八研究所 | Method for improving uniformity of ion beams of large-parameter ion source |
| CN113278930A (en) * | 2021-04-25 | 2021-08-20 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | Nanocluster beam density control device and application method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1227881A (en) * | 1998-01-28 | 1999-09-08 | 易通公司 | Magnetic filter for ion source |
| CN1700402A (en) * | 2004-05-14 | 2005-11-23 | 日新意旺机械股份公司 | Ion implanting apparatus |
| JP2006147599A (en) * | 2000-11-30 | 2006-06-08 | Semequip Inc | Ion implantation system and control method |
| CN101661862A (en) * | 2008-08-27 | 2010-03-03 | 日新离子机器株式会社 | Ion source |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4447732A (en) * | 1982-05-04 | 1984-05-08 | The United States Of America As Represented By The United States Department Of Energy | Ion source |
| CN1227881C (en) * | 1999-10-04 | 2005-11-16 | 日本电气株式会社 | Demodulator for processing digital signal |
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2011
- 2011-05-17 CN CN2011101278519A patent/CN102789945A/en active Pending
- 2011-08-05 WO PCT/CN2011/078074 patent/WO2012155395A1/en active Application Filing
- 2011-08-05 CN CN2011800697405A patent/CN103477414A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1227881A (en) * | 1998-01-28 | 1999-09-08 | 易通公司 | Magnetic filter for ion source |
| JP2006147599A (en) * | 2000-11-30 | 2006-06-08 | Semequip Inc | Ion implantation system and control method |
| CN1700402A (en) * | 2004-05-14 | 2005-11-23 | 日新意旺机械股份公司 | Ion implanting apparatus |
| CN101661862A (en) * | 2008-08-27 | 2010-03-03 | 日新离子机器株式会社 | Ion source |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105575748A (en) * | 2015-12-11 | 2016-05-11 | 中国电子科技集团公司第四十八研究所 | Method for improving uniformity of ion beams of large-parameter ion source |
| CN113278930A (en) * | 2021-04-25 | 2021-08-20 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | Nanocluster beam density control device and application method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012155395A1 (en) | 2012-11-22 |
| CN103477414A (en) | 2013-12-25 |
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Application publication date: 20121121 |