CN102780476A - General NMOS (N-metal-oxide-semiconductor) switching tube driver circuit - Google Patents
General NMOS (N-metal-oxide-semiconductor) switching tube driver circuit Download PDFInfo
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- CN102780476A CN102780476A CN2011104257321A CN201110425732A CN102780476A CN 102780476 A CN102780476 A CN 102780476A CN 2011104257321 A CN2011104257321 A CN 2011104257321A CN 201110425732 A CN201110425732 A CN 201110425732A CN 102780476 A CN102780476 A CN 102780476A
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Abstract
The invention discloses a general NMOS (N-metal-oxide-semiconductor) switching tube driver circuit. The driver circuit comprises a control device, wherein the control device is connected with a discharge control circuit and a charge control circuit. The driver circuit has the following beneficial effects that the driver circuit is formed by relatively cheap discrete components and has the characteristics of low cost and low power consumption compared with the existing driver circuits; besides, control of charge and discharge is realized via a pair of different control signals; the control reliability and system safety are improved by way of circuit redundancy; at the moment the control system is powered on or powered off and under the condition that the controller is abnormal, the charge/discharge loop is firstly cut off, thus avoiding false operation and ensuring system safety; and the problem that the charge loop can not be reliably connected or cut off and the oscillatory condition is formed because the driver circuit formed by the common triode or MOS tube can not provide the potential equivalent to the cathode P- of a charger is also solved.
Description
Technical field
The present invention relates to a kind of nmos switch tube drive circuit, be specifically related to a kind of nmos switch tube drive circuit that adopts discrete component to form.
Background technology
Present widely used Driving technique mainly contains the special driving chip driving and photoelectrical coupler drives; Use special-purpose NMOS chip for driving to cost an arm and a leg, cost is difficult to bear in low-and-medium-grade products, and photoelectrical coupler drives if adopt common optoelectronic coupler; Its drive current need reach the above reliably driving of 10MA; Power consumption is excessive for the charge and discharge switch circuit that needs work long hours, if adopt the drivable photoelectrical coupler of little electric current, has the problem of selling at exorbitant prices equally.
The charge-discharge system that adopts the NMOS pipe to carry out switch control have charging, discharge with mouthful and charging, different mouthful of two kinds of structures of discharge, its circuit theory diagrams such as Fig. 1, shown in Figure 2.
In the same mouth structure of Fig. 1, energy storage device discharge and recharge a shared loop.During charging, bidirectional switch K1, K2 beat to the right, connect charger; At this moment, P+ is that positive pole, the P-of charger is the charger negative pole, and B+ is that energy storage device is anodal; B-is the energy storage device negative pole, makes switch NMOS pipe Q2 conducting through starting drive circuit DRIVER CIRCUIT, forms the charge circuit of P+ → B+ → B-→ Q1 → Q2 → P-→ P+; Wherein owing to the existence of Q1 body diode, its on off operating mode does not influence charge circuit; During discharge, bidirectional switch K1, K2 beat to the left side, connect load; At this moment, P+ is that positive pole, the P-of load is the load negative pole, and B+ is that energy storage device is anodal; B-is the energy storage device negative pole, makes switch NMOS pipe Q1 conducting through starting drive circuit DRIVER CIRCUIT, forms the discharge loop of B+ → P+-→ P-Q2 → Q1 → B-→ B+; Wherein owing to the existence of Q2 body diode, its on off operating mode does not influence discharge loop.In this structure, charge and discharge process can not carry out simultaneously.
In the different mouth structure, charging and discharging circuit is independent separately.During charging, single-way switch K2 is closed, connects charger, and drive circuit DRIVER CIRCUIT makes the Q2 conducting, forms charge circuit; During discharge, single-way switch K1 is closed, connects load, and drive circuit DRIVER CIRCUIT makes the Q1 conducting, forms discharge loop.In this structure, charge and discharge process can carry out simultaneously.
Owing to exist P-lower in the charging process than B-electromotive force, and the ground GND of control system to be electromotive force with the negative pole B-of energy storage device be reference, therefore cause common discrete component drive circuit can't normally control the break-make of discharge NMOS pipe Q2.
Summary of the invention
The objective of the invention is deficiency, provide a kind of cost low NMOS tube drive circuit, go for mouth structure and different mouth structure to above-mentioned prior art.
Technical scheme of the present invention realizes in the following manner: a kind of universal nmos switch tube drive circuit, comprise control device, and control device links to each other with charge/discharge control circuit, charging control circuit.
Said charging control circuit comprises triode Q6; Be connected with capacitor C 2 between the triode Q6 collector and emitter; The base stage of triode Q6 links to each other with resistance R 8, collector electrode links to each other with R7, and the collector electrode of triode Q6 links to each other with the base stage of triode Q7, the emitter of triode Q6 links to each other with the emitter of triode Q7, and the collector electrode of triode Q7 links to each other with first voltage stabilizing circuit; First voltage stabilizing circuit links to each other with the grid of NMOS pipe Q8, and NMOS pipe Q8 drain electrode links to each other with second voltage stabilizing circuit.
Said charge/discharge control circuit comprises triode Q3; Be connected with capacitor C 1 between the collector and emitter of triode Q3, the base stage of triode Q3 links to each other with resistance R 2, and the collector electrode of triode Q3 links to each other with the base stage of R1, triode Q4; The emitter of triode Q4 links to each other with the emitter of triode Q3; Be connected with the 3rd voltage stabilizing circuit between the collector electrode of triode Q4, the emitter, the 3rd voltage stabilizing circuit is that NMOS pipe Q5 provides grid voltage, and the drain electrode of NMOS pipe Q5 links to each other with the 4th voltage stabilizing circuit.
Adopt relatively cheap discrete component to form, compare with existing drive circuit, cost of the present invention is low, power consumption is little.In addition; The present invention all realizes through the control signal of a pair of inequality the control that discharges and recharges; Increase the reliability and the fail safe of system of control with the redundant mode of circuit, under situation such as control system powered on moment, outage moment, controller appearance be unusual, at first cut off charging and discharging circuit; Avoid misoperation, guarantee the safety of system.The present invention has also solved the drive circuit that common triode or metal-oxide-semiconductor constitute because the suitable current potential with charger negative pole P-can't be provided, and the reliably conducting that causes or by charge circuit, and the problem of formation oscillatory regime.
Description of drawings
Fig. 1 is the drive principle figure that the NMOS pipe discharges and recharges with mouth in the prior art.
Fig. 2 is the drive principle figure that the different mouth of NMOS pipe discharges and recharges in the prior art.
Fig. 3 is circuit theory diagrams of the present invention.
Embodiment
As shown in Figure 3, a kind of universal nmos switch tube drive circuit comprises control device, and control device links to each other with charge/discharge control circuit, charging control circuit.
Said charging control circuit comprises triode Q6; Be connected with capacitor C 2 between the triode Q6 collector and emitter; The base stage of triode Q6 links to each other with resistance R 8, collector electrode links to each other with R7, and the collector electrode of triode Q6 links to each other with the base stage of triode Q7, the emitter of triode Q6 links to each other with the emitter of triode Q7, and the collector electrode of triode Q7 links to each other with first voltage stabilizing circuit; First voltage stabilizing circuit links to each other with the grid of NMOS pipe Q8, and NMOS pipe Q8 drain electrode links to each other with second voltage stabilizing circuit.
Said charge/discharge control circuit comprises triode Q3; Be connected with capacitor C 1 between the collector and emitter of triode Q3, the base stage of triode Q3 links to each other with resistance R 2, and the collector electrode of triode Q3 links to each other with the base stage of R1, triode Q4; The emitter of triode Q4 links to each other with the emitter of triode Q3; Be connected with the 3rd voltage stabilizing circuit between the collector electrode of triode Q4, the emitter, the 3rd voltage stabilizing circuit is that NMOS pipe Q5 provides grid voltage, and the drain electrode of NMOS pipe Q5 links to each other with the 4th voltage stabilizing circuit.
The course of work of the present invention is following:
During discharge: two different ports of controller are exported discharge control signal DISCON and discharge enable signal DISEN respectively; Wherein the DISEN output low level is ended triode Q3; The high level of DISCON output simultaneously makes triode Q4 conducting; Triode Q4 collector electrode output low level is to the grid of NMOS pipe Q5; NMOS pipe Q5 is ended, thereby make the 4th voltage stabilizing circuit work that is made up of resistance R 5, resistance R 6 and voltage-stabiliser tube ZD2, Q1 provides reliable grid source driving voltage U for discharge control switch NMOS pipe
GS1, form the discharge path from D1 to S1; In the time of need stopping to discharge; DISEN output high level makes triode Q3 conducting, and the DISCON output low level is ended triode Q4 simultaneously; Thereby make the 3rd voltage stabilizing circuit work that constitutes by resistance R 3, resistance R 4 and voltage-stabiliser tube ZD1, and reliable grid source driving voltage U is provided for NMOS manages Q5
GS5, making its conducting, the grid from the drain electrode output low level to discharge control switch NMOS pipe Q1 ends it, thereby cuts off discharge path.
During charging: two different ports of controller are exported charging control signal CHGCON and charging enable signal CHGEN respectively; Wherein the CHGEN output low level is ended triode Q6; The high level of CHGCON output simultaneously makes triode Q7 conducting; And make the first voltage stabilizing circuit work that constitutes by resistance R 9, resistance R 10 and voltage-stabiliser tube ZD3, for triode Q8 provides negative reliably grid source driving voltage U
GS8, and make triode Q8 conducting, thus making the 4th voltage stabilizing circuit work that constitutes by resistance R 11, resistance R 12 and voltage-stabiliser tube ZD4, Q2 provides reliable grid source driving voltage U for charging control switch NMOS pipe
GS2, form the charging path from D2 to S2; In the time of need stopping to charge, CHGEN output high level makes triode Q6 conducting, simultaneously the CHGCON output low level; Triode Q7 is ended, and voltage-stabiliser tube ZD3 goes up no pressure drop, does not promptly have effective conduction voltage drop on the triode Q8 and ends; Thereby feasible second voltage stabilizing circuit that is made up of resistance R 11, resistance R 12 and voltage-stabiliser tube ZD4 is not worked; And voltage-stabiliser tube ZD4 goes up no pressure drop, and promptly charging control switch NMOS pipe Q2 is not because of having conduction voltage drop to end between grid and source electrode, thereby cuts off the path that charges.
When the present invention works, make the charge circuit conducting if desired, must satisfy discharge enable signal DISEN simultaneously is low level, and discharge control signal DISCON is a high level, and under other situation, charge circuit all is in cut-off state.Make the discharge loop conducting if desired, must satisfy charging enable signal CHGEN simultaneously is low level, and charging control signal DISCON is a high level, and under other situation, discharge loop all is in cut-off state.
Claims (3)
1. a universal nmos switch tube drive circuit comprises control device, it is characterized in that: control device links to each other with charge/discharge control circuit, charging control circuit.
2. universal nmos switch tube drive circuit according to claim 1; It is characterized in that: said charging control circuit comprises triode Q6; Be connected with capacitor C 2 between the triode Q6 collector and emitter; The base stage of triode Q6 links to each other with resistance R 8, collector electrode links to each other with R7, and the collector electrode of triode Q6 links to each other with the base stage of triode Q7, the emitter of triode Q6 links to each other with the emitter of triode Q7, and the collector electrode of triode Q7 links to each other with first voltage stabilizing circuit; First voltage stabilizing circuit links to each other with the grid of NMOS pipe Q8, and NMOS pipe Q8 drain electrode links to each other with second voltage stabilizing circuit.
3. universal nmos switch tube drive circuit according to claim 1; It is characterized in that: said charge/discharge control circuit comprises triode Q3; Be connected with capacitor C 1 between the collector and emitter of triode Q3, the base stage of triode Q3 links to each other with resistance R 2, and the collector electrode of triode Q3 links to each other with the base stage of R1, triode Q4; The emitter of triode Q4 links to each other with the emitter of triode Q3; Be connected with the 3rd voltage stabilizing circuit between the collector electrode of triode Q4, the emitter, the 3rd voltage stabilizing circuit is that NMOS pipe Q5 provides grid voltage, and the drain electrode of NMOS pipe Q5 links to each other with the 4th voltage stabilizing circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110425732.1A CN102780476B (en) | 2011-12-19 | 2011-12-19 | General NMOS (N-metal-oxide-semiconductor) switching tube driver circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110425732.1A CN102780476B (en) | 2011-12-19 | 2011-12-19 | General NMOS (N-metal-oxide-semiconductor) switching tube driver circuit |
Publications (2)
| Publication Number | Publication Date |
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| CN102780476A true CN102780476A (en) | 2012-11-14 |
| CN102780476B CN102780476B (en) | 2015-04-15 |
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| CN201110425732.1A Expired - Fee Related CN102780476B (en) | 2011-12-19 | 2011-12-19 | General NMOS (N-metal-oxide-semiconductor) switching tube driver circuit |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090160500A1 (en) * | 2007-12-20 | 2009-06-25 | Marian Niculae | Power management systems with charge pumps |
| CN201383689Y (en) * | 2009-02-11 | 2010-01-13 | 中山市嘉科电子有限公司 | Charger circuit |
| CN201590755U (en) * | 2009-12-17 | 2010-09-22 | 东南大学 | Power MOS transistor grid drive circuit for grid floating and level conversion |
| CN201839267U (en) * | 2010-07-19 | 2011-05-18 | 东莞钜威新能源股份有限公司 | Drive circuit of switch |
| CN202406093U (en) * | 2011-12-19 | 2012-08-29 | 洛阳理工学院 | Universal driving circuit for NMOS (N-channel Mental Oxide Semiconductor) switching tube |
-
2011
- 2011-12-19 CN CN201110425732.1A patent/CN102780476B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090160500A1 (en) * | 2007-12-20 | 2009-06-25 | Marian Niculae | Power management systems with charge pumps |
| CN201383689Y (en) * | 2009-02-11 | 2010-01-13 | 中山市嘉科电子有限公司 | Charger circuit |
| CN201590755U (en) * | 2009-12-17 | 2010-09-22 | 东南大学 | Power MOS transistor grid drive circuit for grid floating and level conversion |
| CN201839267U (en) * | 2010-07-19 | 2011-05-18 | 东莞钜威新能源股份有限公司 | Drive circuit of switch |
| CN202406093U (en) * | 2011-12-19 | 2012-08-29 | 洛阳理工学院 | Universal driving circuit for NMOS (N-channel Mental Oxide Semiconductor) switching tube |
Non-Patent Citations (1)
| Title |
|---|
| 刘教民: "高频谐振逆变器的功率MOS管驱动电路", 《电工技术学报》 * |
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| CN102780476B (en) | 2015-04-15 |
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