CN102780475A - Radio frequency transceiver switching circuit - Google Patents
Radio frequency transceiver switching circuit Download PDFInfo
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- CN102780475A CN102780475A CN2011101232924A CN201110123292A CN102780475A CN 102780475 A CN102780475 A CN 102780475A CN 2011101232924 A CN2011101232924 A CN 2011101232924A CN 201110123292 A CN201110123292 A CN 201110123292A CN 102780475 A CN102780475 A CN 102780475A
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Abstract
The invention discloses a radio frequency transceiver switching circuit which comprises CMOS (Complementary Metal Oxide Semiconductor) devices and a duodiode with a P trap/deep N trap and deep N trap/P substrate, wherein the deep N trap and the P trap float. The invention provides the high-performance radio frequency switching circuit which is designed by utilizing a combined circuit model formed by the CMOS devices on four ends and an additional duodiode model which describes the P trap/deep N trap and deep N trap/P substrate, so that all radio frequency indexes such as isolation, insertion loss and linearity can be obtained.
Description
Technical field
The present invention relates to a kind of semiconductor device, be specifically related to a kind of radio-frequency receiving-transmitting switching device.
Background technology
In radar, communication and other microwave system; Need control the transmission of signal; The control circuit or the single-chip that need various frequency microwaves; Microwave and RF switch are one of core devices of this type receive-transmit system, in order to reduce the insertion loss, reduce the insertion loss through reducing resistance substrate with the method that the direct current biasing current potential of stable transmitting-receiving node is set usually.The limitation of this method is to have made the linearity variation of transmit-receive switch then.Therefore a kind of novel circuit structure design method need be provided, can design high performance radio-frequency receiving-transmitting switching circuit more accurately, obtain the isolation of more accurate radio-frequency switch circuit, insert RF indexes such as the loss and the linearity.
Summary of the invention
Technical problem to be solved by this invention provides a kind of radio-frequency receiving-transmitting switching circuit, and it can obtain all isolations, inserts RF indexes such as the loss and the linearity.
In order to solve above technical problem, the invention provides a kind of radio-frequency receiving-transmitting switching circuit, comprise cmos device; The double diode of P trap/dark N trap and dark N trap/P substrate; Wherein dark N trap and P trap are floating empty.
Beneficial effect of the present invention is: proposed a kind of employing 4 end cmos devices; The combinational circuit model that adds the double diode model of describing P trap/dark N trap and dark N trap/P substrate designs high performance radio-frequency switch circuit; Can obtain all isolations, insert RF indexes such as the loss and the linearity.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further explain.
Fig. 1 is the cross-sectional view of the NMOS pipe in the triple-well process;
Fig. 2 is the radio-frequency switch circuit sketch map that comprises accurate electronic circuit that adopts the Stack structure.
Embodiment
Along with updating of CMOS technology, make over and in the transceiver RF front-end circuit, be difficult to integrated receipts/send out a switch and become possibility now.The present invention proposes a kind of consideration P trap/dark N trap different and the high performance radio-frequency receiving-transmitting switching circuit of dark N trap/P substrate physical device effect with conventional design.
Metal-oxide-semiconductor has very high impedance to frequency microwave under the shutoff situation, and when conducting; Show very low impedance again; Can make switch, in application scenarios such as frequency microwave switch or attenuators, its circuit parameter requires device to have less insertion loss and bigger isolation parameters.Switch mosfet comes the break-make of control circuit through grid; Form switching circuit; The general switch that adopts single-pole double throw; DC port through control VCTL and its reverse VCTLB can be connected to emission or receiving terminal with antenna respectively, accomplishes signal to the reception of low noise amplifier or with the emission function of signal from the power amplifier to the antenna.The present invention designs and has proposed a kind of employing 4 end cmos devices; The combinational circuit model that adds the double diode model of describing P trap/dark N trap and dark N trap/P substrate designs high performance radio-frequency switch circuit; Can obtain all isolations, insert RF indexes such as the loss and the linearity.
The present invention has realized the precise design of high performance radio-frequency switch circuit through utilizing the circuit design of considering the actual physics device architecture.Because RF switch need have the ability of processing power; And this depends on the linearity index of RF switch; Generally; Because device instantaneous PN junction conducting meeting during operation causes the linearity to be degenerated, be to improve one of way of the RF switch linearity so avoid the conducting of the junction diode of parasitism.In Fig. 1; Adopt comparatively commonly used at present being used to reduce noise and design novel radio-frequency switch circuit with the mixed signal technology that improves isolation performance with triple-well; Utilize 2 extra parasitic diodes of its generation: P trap and dark N n; Dark N trap and P substrate diode, the circuit of drawn the P trap/dark N trap and the double diode of dark N trap/P substrate is not considered the influence of these 2 parasitic diodes in common circuit design; Adopt the method for designing of dark N trap and P trap dual suspension to realize big linearity index in the present invention specially in order to improve the linearity; Owing to be floating dummy status, when transistor turns, the source body can not exert an influence to inserting loss with the parasitic capacitance of leaking body simultaneously.
As shown in Figure 1, when the P trap was floated sky by a big resistance, the transient voltage of P trap was actual in the signal voltage of booting; Thereby avoided source body/leakage body diode to be improved the linearity like this by the large-signal forward conduction; Simultaneously since dark N trap also by floating empty, so cause the P trap and the diode of dark N trap also to be placed in safe state, for dark N trap and this diode of P type substrate; Really might be by forward conduction; But because the decay property of these bootstrap voltage mode effects, need the required signal voltage of the diode in this outside of forward conduction quite big, this makes this radio-frequency switch circuit design still can obtain the big linearity and is operated under the normal condition simultaneously.
Fig. 2 has provided the radio-frequency switch circuit structure chart of design; Each transistor has wherein all comprised the electronic circuit structure in the round frame of dotted line; Antenna wherein; TX and RX are respectively the antenna of RF switch, transmit and receive port, and the control signal that Vctl and VctlB are respectively the control RF switch is a complementary voltage.
The present invention is not limited to the execution mode that preceding text are discussed.More than the description of embodiment is intended in order to describe and explain the technical scheme that the present invention relates to.Based on the conspicuous conversion of the present invention enlightenment or substitute and also should be considered to fall into protection scope of the present invention.Above embodiment is used for disclosing best implementation method of the present invention, so that those of ordinary skill in the art can use numerous embodiments of the present invention and multiple alternative reaches the object of the invention.
Claims (2)
1. radio-frequency receiving-transmitting switching circuit; It is characterized in that, comprising:
Cmos device;
The double diode of P trap/dark N trap and dark N trap/P substrate;
Wherein dark N trap and P trap are floating empty.
2. radio-frequency receiving-transmitting switching circuit as claimed in claim 1; It is characterized in that said cmos device is 4 end cmos devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101232924A CN102780475A (en) | 2011-05-13 | 2011-05-13 | Radio frequency transceiver switching circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101232924A CN102780475A (en) | 2011-05-13 | 2011-05-13 | Radio frequency transceiver switching circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102780475A true CN102780475A (en) | 2012-11-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101232924A Pending CN102780475A (en) | 2011-05-13 | 2011-05-13 | Radio frequency transceiver switching circuit |
Country Status (1)
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| CN (1) | CN102780475A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103812483A (en) * | 2014-01-13 | 2014-05-21 | 智坤（江苏）半导体有限公司 | CMOS (complementary metal oxide semiconductor) radio frequency switch |
| CN105099414A (en) * | 2014-05-14 | 2015-11-25 | Dsp集团有限公司 | Rf transformer based tx/rx integrated rf switch |
| CN105187038A (en) * | 2015-07-14 | 2015-12-23 | 海宁海微电子科技有限公司 | Asymmetric RF transceiver switch circuit |
| CN106664086A (en) * | 2014-06-12 | 2017-05-10 | 天工方案公司 | Parasitic compensation for radio-frequency switch applications |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060119451A1 (en) * | 2004-12-08 | 2006-06-08 | Airoha Technology Corp. | Switching circuits |
| WO2008036047A1 (en) * | 2006-09-21 | 2008-03-27 | Nanyang Technological University | Triple well transmit-receive switch transistor |
| CN101192695A (en) * | 2006-12-01 | 2008-06-04 | 三星电机株式会社 | System, method and apparatus for high power cmos antenna switch |
| CN102025358A (en) * | 2009-09-16 | 2011-04-20 | 复旦大学 | MOS switching circuit with broadband and high linearity |
-
2011
- 2011-05-13 CN CN2011101232924A patent/CN102780475A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060119451A1 (en) * | 2004-12-08 | 2006-06-08 | Airoha Technology Corp. | Switching circuits |
| WO2008036047A1 (en) * | 2006-09-21 | 2008-03-27 | Nanyang Technological University | Triple well transmit-receive switch transistor |
| CN101192695A (en) * | 2006-12-01 | 2008-06-04 | 三星电机株式会社 | System, method and apparatus for high power cmos antenna switch |
| CN102025358A (en) * | 2009-09-16 | 2011-04-20 | 复旦大学 | MOS switching circuit with broadband and high linearity |
Non-Patent Citations (1)
| Title |
|---|
| TAKAHIRO OHNAKADO ET: "21.5-dBm Power-Handling 5-GHz Transmit/Receive", 《IEEE JOURNAL OF SOLID-STATE CIRCUITS》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103812483A (en) * | 2014-01-13 | 2014-05-21 | 智坤（江苏）半导体有限公司 | CMOS (complementary metal oxide semiconductor) radio frequency switch |
| CN105099414A (en) * | 2014-05-14 | 2015-11-25 | Dsp集团有限公司 | Rf transformer based tx/rx integrated rf switch |
| CN105099414B (en) * | 2014-05-14 | 2018-10-16 | Dsp集团有限公司 | TX/RX based on RF transformers integrates RF switches |
| CN106664086A (en) * | 2014-06-12 | 2017-05-10 | 天工方案公司 | Parasitic compensation for radio-frequency switch applications |
| CN106664086B (en) * | 2014-06-12 | 2020-03-03 | 天工方案公司 | Parasitic compensation for radio frequency switching applications |
| CN105187038A (en) * | 2015-07-14 | 2015-12-23 | 海宁海微电子科技有限公司 | Asymmetric RF transceiver switch circuit |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140103 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140103 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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Application publication date: 20121114 |