CN102779897B - 一种一次性扩散制备选择性发射极的方法 - Google Patents
一种一次性扩散制备选择性发射极的方法 Download PDFInfo
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- CN102779897B CN102779897B CN201210158557.9A CN201210158557A CN102779897B CN 102779897 B CN102779897 B CN 102779897B CN 201210158557 A CN201210158557 A CN 201210158557A CN 102779897 B CN102779897 B CN 102779897B
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 148
- 238000000034 method Methods 0.000 title claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 100
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 78
- 239000010703 silicon Substances 0.000 claims abstract description 78
- 239000010453 quartz Substances 0.000 claims description 64
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 64
- 230000000694 effects Effects 0.000 claims description 39
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 32
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- 238000010438 heat treatment Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000000523 sample Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 238000002360 preparation method Methods 0.000 abstract description 12
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- 238000007796 conventional method Methods 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910052755 nonmetal Inorganic materials 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
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- 239000003085 diluting agent Substances 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210158557.9A CN102779897B (zh) | 2012-05-22 | 2012-05-22 | 一种一次性扩散制备选择性发射极的方法 |
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CN201210158557.9A CN102779897B (zh) | 2012-05-22 | 2012-05-22 | 一种一次性扩散制备选择性发射极的方法 |
Publications (2)
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CN102779897A CN102779897A (zh) | 2012-11-14 |
CN102779897B true CN102779897B (zh) | 2014-11-12 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104157732B (zh) * | 2014-07-31 | 2016-05-04 | 江苏荣马新能源有限公司 | 一种太阳能电池扩散工艺 |
CN104480532B (zh) * | 2014-12-30 | 2017-03-15 | 江西赛维Ldk太阳能高科技有限公司 | 一种金刚线切割多晶硅片的制绒预处理方法和制绒预处理硅片及其应用 |
CN105161570B (zh) * | 2015-08-18 | 2017-03-01 | 东莞南玻光伏科技有限公司 | 选择性发射极太阳能电池及其扩散方法 |
CN109638109B (zh) * | 2018-12-11 | 2020-07-10 | 湖南红太阳光电科技有限公司 | 一种选择性发射极的制备方法、选择性发射极电池的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101771103A (zh) * | 2009-01-07 | 2010-07-07 | 和舰科技(苏州)有限公司 | 二段式太阳能电池的制造方法 |
CN101950781A (zh) * | 2010-09-09 | 2011-01-19 | 浙江百力达太阳能有限公司 | 一种承载硅片的载具及选择性发射极太阳电池的掩膜工艺 |
CN102088046A (zh) * | 2010-12-18 | 2011-06-08 | 广东爱康太阳能科技有限公司 | 一种单步扩散制作晶硅太阳电池的选择性发射极工艺 |
Family Cites Families (2)
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US7776727B2 (en) * | 2007-08-31 | 2010-08-17 | Applied Materials, Inc. | Methods of emitter formation in solar cells |
CN101635253A (zh) * | 2008-06-14 | 2010-01-27 | 因特维克有限公司 | 利用可拆除掩模处理基板的系统和方法 |
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- 2012-05-22 CN CN201210158557.9A patent/CN102779897B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101771103A (zh) * | 2009-01-07 | 2010-07-07 | 和舰科技(苏州)有限公司 | 二段式太阳能电池的制造方法 |
CN101950781A (zh) * | 2010-09-09 | 2011-01-19 | 浙江百力达太阳能有限公司 | 一种承载硅片的载具及选择性发射极太阳电池的掩膜工艺 |
CN102088046A (zh) * | 2010-12-18 | 2011-06-08 | 广东爱康太阳能科技有限公司 | 一种单步扩散制作晶硅太阳电池的选择性发射极工艺 |
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Effective date of registration: 20220601 Address after: 314417 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province Patentee after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 310000 1335 Bin'an Road, Binjiang District, Hangzhou City, Zhejiang Province Patentee before: CHINT SOLAR (ZHEJIANG) Co.,Ltd. |
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Address after: 314417 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province Patentee after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 314417 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province Patentee before: Zhengtai Xinneng Technology Co.,Ltd. |
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