CN102769282B - 一种电路板接口静电放电防护电路 - Google Patents
一种电路板接口静电放电防护电路 Download PDFInfo
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- CN102769282B CN102769282B CN201110113704.6A CN201110113704A CN102769282B CN 102769282 B CN102769282 B CN 102769282B CN 201110113704 A CN201110113704 A CN 201110113704A CN 102769282 B CN102769282 B CN 102769282B
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CN201110113704.6A CN102769282B (zh) | 2011-05-04 | 2011-05-04 | 一种电路板接口静电放电防护电路 |
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CN201110113704.6A CN102769282B (zh) | 2011-05-04 | 2011-05-04 | 一种电路板接口静电放电防护电路 |
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CN102769282A CN102769282A (zh) | 2012-11-07 |
CN102769282B true CN102769282B (zh) | 2015-01-07 |
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CN201110113704.6A Expired - Fee Related CN102769282B (zh) | 2011-05-04 | 2011-05-04 | 一种电路板接口静电放电防护电路 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103248034B (zh) * | 2013-05-15 | 2015-08-12 | 成都市宏山科技有限公司 | 可雷电防护的u盘 |
US10557881B2 (en) | 2015-03-27 | 2020-02-11 | Analog Devices Global | Electrical overstress reporting |
US9871373B2 (en) * | 2015-03-27 | 2018-01-16 | Analog Devices Global | Electrical overstress recording and/or harvesting |
US10677822B2 (en) | 2016-09-27 | 2020-06-09 | Analog Devices Global Unlimited Company | Electrical overstress detection device |
CN106786454A (zh) * | 2016-12-12 | 2017-05-31 | 中国航空工业集团公司西安航空计算技术研究所 | 一种数字信号有源防护电路 |
US11112436B2 (en) | 2018-03-26 | 2021-09-07 | Analog Devices International Unlimited Company | Spark gap structures for detection and protection against electrical overstress events |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5124877A (en) * | 1989-07-18 | 1992-06-23 | Gazelle Microcircuits, Inc. | Structure for providing electrostatic discharge protection |
US5654862A (en) * | 1995-04-24 | 1997-08-05 | Rockwell International Corporation | Method and apparatus for coupling multiple independent on-chip Vdd busses to an ESD core clamp |
US5771140A (en) * | 1995-11-28 | 1998-06-23 | Lg Semicon Co., Ltd. | Electro-static discharge and latch-up prevention circuit |
CN1516277A (zh) * | 2003-01-03 | 2004-07-28 | 矽统科技股份有限公司 | 一种用来保护高频射频集成电路避免静电放电伤害的装置 |
CN2671286Y (zh) * | 2003-11-06 | 2005-01-12 | 华为技术有限公司 | 一种实现esd防护的二极管电路 |
CN1674389A (zh) * | 2004-03-23 | 2005-09-28 | 华为技术有限公司 | 一种信号接口保护电路 |
CN101562140A (zh) * | 2008-04-16 | 2009-10-21 | 中国科学院微电子研究所 | 一种提高集成电路芯片抗静电能力的封装方法 |
CN102034811A (zh) * | 2010-09-21 | 2011-04-27 | 电子科技大学 | 一种用于集成电路芯片esd保护的低压scr结构 |
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2011
- 2011-05-04 CN CN201110113704.6A patent/CN102769282B/zh not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5124877A (en) * | 1989-07-18 | 1992-06-23 | Gazelle Microcircuits, Inc. | Structure for providing electrostatic discharge protection |
US5654862A (en) * | 1995-04-24 | 1997-08-05 | Rockwell International Corporation | Method and apparatus for coupling multiple independent on-chip Vdd busses to an ESD core clamp |
US5771140A (en) * | 1995-11-28 | 1998-06-23 | Lg Semicon Co., Ltd. | Electro-static discharge and latch-up prevention circuit |
CN1516277A (zh) * | 2003-01-03 | 2004-07-28 | 矽统科技股份有限公司 | 一种用来保护高频射频集成电路避免静电放电伤害的装置 |
CN2671286Y (zh) * | 2003-11-06 | 2005-01-12 | 华为技术有限公司 | 一种实现esd防护的二极管电路 |
CN1674389A (zh) * | 2004-03-23 | 2005-09-28 | 华为技术有限公司 | 一种信号接口保护电路 |
CN101562140A (zh) * | 2008-04-16 | 2009-10-21 | 中国科学院微电子研究所 | 一种提高集成电路芯片抗静电能力的封装方法 |
CN102034811A (zh) * | 2010-09-21 | 2011-04-27 | 电子科技大学 | 一种用于集成电路芯片esd保护的低压scr结构 |
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CN102769282A (zh) | 2012-11-07 |
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Owner name: ZHONGKE XINWEITE TECH DEVELOPMENT CO., LTD., BEIJI Free format text: FORMER OWNER: CENG CHUANBIN Effective date: 20130327 Owner name: CENG CHUANBIN SUN YAN Effective date: 20130327 |
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Effective date of registration: 20130327 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3, China Academy of Sciences Institute of microelectronics B block 513 Applicant after: Beijing Zhongke Xinweite Science And Technology Development Co.,Ltd. Applicant after: Zeng Chuanbin Applicant after: Sun Yan Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Applicant before: Zeng Chuanbin |
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Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3, China Academy of Sciences Institute of microelectronics B block 513 Applicant after: BEIJING ZHONGKE XINWEITE SCIENCE & TECHNOLOGY DEVELOPMENT Co.,Ltd. Applicant after: Zeng Chuanbin Applicant after: Sun Yan Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3, China Academy of Sciences Institute of microelectronics B block 513 Applicant before: Beijing Zhongke Xinweite Science And Technology Development Co.,Ltd. Applicant before: Zeng Chuanbin Applicant before: Sun Yan |
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