CN102769068B - 太阳能电池用多晶硅片的编码方法 - Google Patents
太阳能电池用多晶硅片的编码方法 Download PDFInfo
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- CN102769068B CN102769068B CN201210141586.4A CN201210141586A CN102769068B CN 102769068 B CN102769068 B CN 102769068B CN 201210141586 A CN201210141586 A CN 201210141586A CN 102769068 B CN102769068 B CN 102769068B
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 229920005591 polysilicon Polymers 0.000 claims abstract description 21
- 239000013078 crystal Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000007306 turnover Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000011449 brick Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210141586.4A CN102769068B (zh) | 2012-05-09 | 2012-05-09 | 太阳能电池用多晶硅片的编码方法 |
Applications Claiming Priority (1)
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CN201210141586.4A CN102769068B (zh) | 2012-05-09 | 2012-05-09 | 太阳能电池用多晶硅片的编码方法 |
Publications (2)
Publication Number | Publication Date |
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CN102769068A CN102769068A (zh) | 2012-11-07 |
CN102769068B true CN102769068B (zh) | 2015-12-16 |
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CN201210141586.4A Active CN102769068B (zh) | 2012-05-09 | 2012-05-09 | 太阳能电池用多晶硅片的编码方法 |
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CN (1) | CN102769068B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6658640B2 (en) * | 2001-12-26 | 2003-12-02 | Numerical Technologies, Inc. | Simulation-based feed forward process control |
CN101604973A (zh) * | 2009-07-13 | 2009-12-16 | 松翰科技股份有限公司 | 芯片识别序号的编码方法及其装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6759248B2 (en) * | 2001-09-28 | 2004-07-06 | Motorola, Inc. | Semiconductor wafer identification |
JP4034682B2 (ja) * | 2002-10-21 | 2008-01-16 | 株式会社東芝 | 半導体ウェーハ及び半導体ウェーハ製造方法 |
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2012
- 2012-05-09 CN CN201210141586.4A patent/CN102769068B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6658640B2 (en) * | 2001-12-26 | 2003-12-02 | Numerical Technologies, Inc. | Simulation-based feed forward process control |
CN101604973A (zh) * | 2009-07-13 | 2009-12-16 | 松翰科技股份有限公司 | 芯片识别序号的编码方法及其装置 |
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Publication number | Publication date |
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CN102769068A (zh) | 2012-11-07 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Method for coding polycrystalline silicon wafers for solar cells Effective date of registration: 20191113 Granted publication date: 20151216 Pledgee: China Everbright Bank Limited by Share Ltd. Nanjing branch Pledgor: ZHENJIANG HUANTAI SILICON TECHNOLOGY Co.,Ltd. Registration number: Y2019320000279 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20210127 Granted publication date: 20151216 Pledgee: China Everbright Bank Limited by Share Ltd. Nanjing branch Pledgor: ZHENJIANG HUANTAI SILICON TECHNOLOGY Co.,Ltd. Registration number: Y2019320000279 |
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TR01 | Transfer of patent right |
Effective date of registration: 20210218 Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: 212200 Huantai Industrial Park, Youfang Town, Yangzhong City, Zhenjiang City, Jiangsu Province Patentee before: ZHENJIANG HUANTAI SILICON TECHNOLOGY Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee before: Jiangsu Meike Solar Energy Technology Co.,Ltd. |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Coding method of polysilicon chip for solar cell Effective date of registration: 20211125 Granted publication date: 20151216 Pledgee: Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch Pledgor: Jiangsu Meike Solar Energy Technology Co.,Ltd. Registration number: Y2021980013231 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20221031 Granted publication date: 20151216 Pledgee: Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch Pledgor: Jiangsu Meike Solar Energy Technology Co.,Ltd. Registration number: Y2021980013231 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Coding method for polycrystalline silicon wafers used in solar cells Effective date of registration: 20230524 Granted publication date: 20151216 Pledgee: Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch Pledgor: Jiangsu Meike Solar Energy Technology Co.,Ltd. Registration number: Y2023980041420 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20151216 Pledgee: Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch Pledgor: Jiangsu Meike Solar Energy Technology Co.,Ltd. Registration number: Y2023980041420 |