CN102768984A - Method for repairing metastable state chemical bond on surface of wafer tungsten connecting layer - Google Patents
Method for repairing metastable state chemical bond on surface of wafer tungsten connecting layer Download PDFInfo
- Publication number
- CN102768984A CN102768984A CN2012102257904A CN201210225790A CN102768984A CN 102768984 A CN102768984 A CN 102768984A CN 2012102257904 A CN2012102257904 A CN 2012102257904A CN 201210225790 A CN201210225790 A CN 201210225790A CN 102768984 A CN102768984 A CN 102768984A
- Authority
- CN
- China
- Prior art keywords
- wafer
- chemical bond
- metastable state
- state chemical
- repairing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a method for repairing a metastable state chemical bond on the surface of a wafer tungsten connecting layer. The method comprises the following steps of: contacting ionic liquid with a wafer of which the surface is provided with a metastable state chemical bond, so that ions in the ionic liquid are adsorbed to the metastable state chemical bond on the surface of the wafer. The method provided by the invention can be applied to repairing the metastable state chemical bond (on the surface of the tungsten connecting layer) generated by scanning of an electron beam defect scanner, so that the introduced particle defects subjected to online failure analysis can be removed by employing the conventional cleaning means such as deionized water cleaning or brushing, and the loss caused to the yield is avoided.
Description
Technical field
The present invention relates to integrated circuit and make the field, relate in particular to a kind of method of repairing the unbalance metastable state chemical bond that causes of wafer tungsten articulamentum surface charge.
Background technology
Semiconductor crystal wafer because the secondary electron of incident electron and effusion is in most cases unequal, causes crystal column surface that the unbalance situation of electric charge is arranged after the tungsten articulamentum carries out electron beam defective scanner scanning.
The unbalance meeting of this electric charge makes crystal column surface form metastable chemical bond; Metastable chemical bond in hydrophily is situated between with airborne oxygen; Carbon dioxide and bubble etc. can produce the compound of tungsten through reaction; Crystal column surface is polluted, and the mode that adopts at present all is to avoid in tungsten articulamentum electron beam defective scanner scanning wafer being cleaned that this will influence the window of the online processing procedure of wafer.Such as, if wafer suffers grain defect after tungsten articulamentum electron beam defective scanner scanning, because above-mentioned limitation, the online means of not cleaning are effectively cleaned it.
Summary of the invention
The present invention is directed to and have weak point in the prior art; A kind of method of revising wafer tungsten articulamentum surface metastable state chemical bond is provided; Wafer is handled after electron beam defective scanner scanning; Repair the metastable state chemical bond that crystal column surface forms, thereby enlarged the window of online processing procedure, for yield provides guarantee.
Right realization above-mentioned purpose; A kind of method of repairing wafer tungsten articulamentum surface metastable state chemical bond is provided; May further comprise the steps: the wafer that has the metastable state chemical bond on solion and the surface is contacted, make ionic adsorption in the solion to the metastable state chemical bond of crystal column surface.
In provided by the invention one preferential embodiment, wherein said wafer contacts with solion at rotary state.
In a preferred embodiment provided by the invention, wherein said solion comprises acid ion solution and/or alkali ion solution.Further in the preferred embodiment, said acid ion solution is selected hydrofluoric acid solution for use.Further among the embodiment, said alkali ion solution is selected ammonia spirit for use.The concentration of further preferred hydrofluoric acid solution is 0.5 ~ 2%.The concentration of further preferred ammonia spirit is 20 ~ 40%.
Originally the method that provides can be applied to repair tungsten articulamentum surface because the metastable state chemical bond that electron beam defective scanner scanning produces; Thereby can use conventional cleaning means (washed with de-ionized water or scrub etc.) removes and did the grain defect that online failure analysis is introduced, the loss of avoiding it that yield is caused.
Description of drawings
Fig. 1 is a sketch map of repairing wafer tungsten articulamentum surface metastable state chemical bond in the embodiment of the invention.
Embodiment
The present invention provides a kind of method of repairing wafer tungsten articulamentum surface metastable state chemical bond; May further comprise the steps: the wafer that has the metastable state chemical bond on solion and the surface is contacted, make ionic adsorption in the solion to the metastable state chemical bond of crystal column surface.
Below through embodiment method provided by the invention is done further explain so that better understand the content of the invention, but the content of embodiment does not limit the protection range of the invention.
The present invention is directed to the wafer of crossing by electron beam defective scanner scanning 20, the surface can produce metastable chemical bond.And these chemical bonds in hydrophily is situated between with airborne oxygen, carbon dioxide and bubble etc. produce the compound of tungsten through reaction, pollute on wafer 20 surfaces.To this metastable state chemical bond, set up repairing model and selected and repaired with the rotary spray method.
As shown in Figure 1, at first selected have certain density solion 11, guarantee that this solion can not produce infringement and can effectively repair wafer 20 metastable state chemical bond outwardly under certain condition the tungsten articulamentum.Can select temperature between 20 ~ 100 ℃, have certain density acid ion solution 11 and/or alkali ion solution 11.Preferably use hydrofluoric acid solution in the acid ion solution 11, preferably use ammonia spirit in the alkali ion solution 11.The concentration of further preferred hydrofluoric acid solution is 0.5 ~ 2%, and the concentration of further preferred ammonia spirit is 20 ~ 40%.
Select for use the rotary spray method that wafer 20 is repaired; Under the state of wafer rotation, solion 11 is sprayed onto the surface of wafer 20; Wafer 20 is contacted with selected solion 11 fully, and the solution that can avoid losing charge balance cause other influences to wafer 20.Simultaneously, because wafer 20 makes solion 11 fully contact with wafer 20 surface energies with the certain speed rotation.Ion in the metastable state chemical bond meeting adion solution on wafer 20 surfaces makes it recover structure.And the solion 11 that loses the part ion electric charge be rotated in the centrifugal force that produces of the rotation of wafer 20 in time throw away, avoid it that wafer 20 is caused other influences.Among Fig. 1,10 is the shower nozzle of ejected ion solution 11.
Through the method that the inventive method provides, can repair the metastable state chemical bond of crystal column surface effectively, and then suppress its counter productive of bringing by the unbalance generation of electric charge.To advance the wafer of repairing and experimentize, its experimental result shows: no longer produce accessory substance after meeting water through the wafer of rotary spray method reparation.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (7)
1. method of repairing wafer tungsten articulamentum surface metastable state chemical bond; It is characterized in that; May further comprise the steps: the wafer that has the metastable state chemical bond on solion and the surface is contacted, make ionic adsorption in the solion to the metastable state chemical bond of crystal column surface.
2. method according to claim 1 is characterized in that said wafer contacts with solion at rotary state.
3. method according to claim 1 and 2 is characterized in that, said solion comprises acid ion solution and/or alkali ion solution.
4. method according to claim 3 is characterized in that, said acid ion solution is selected hydrofluoric acid solution for use.
5. method according to claim 3 is characterized in that, said alkali ion solution is selected ammonia spirit for use.
6. method according to claim 4 is characterized in that, the concentration of said hydrofluoric acid solution is 0.5 ~ 2%.
7. method according to claim 5 is characterized in that, the concentration of said ammonia spirit is 20 ~ 40%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210225790.4A CN102768984B (en) | 2012-07-03 | 2012-07-03 | Method for repairing metastable state chemical bond on surface of wafer tungsten connecting layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210225790.4A CN102768984B (en) | 2012-07-03 | 2012-07-03 | Method for repairing metastable state chemical bond on surface of wafer tungsten connecting layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102768984A true CN102768984A (en) | 2012-11-07 |
| CN102768984B CN102768984B (en) | 2015-04-22 |
Family
ID=47096326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210225790.4A Active CN102768984B (en) | 2012-07-03 | 2012-07-03 | Method for repairing metastable state chemical bond on surface of wafer tungsten connecting layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102768984B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465444A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Method for prolonging service life of test wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1967788A (en) * | 2005-11-17 | 2007-05-23 | 上海华虹Nec电子有限公司 | Cleanout method after tungsten CMP |
| US20080076263A1 (en) * | 2006-09-21 | 2008-03-27 | Micron Technology, Inc. | Method of reducing electron beam damage on post W-CMP wafers |
| CN102043354A (en) * | 2009-10-23 | 2011-05-04 | 东京毅力科创株式会社 | Developing apparatus and developing method |
-
2012
- 2012-07-03 CN CN201210225790.4A patent/CN102768984B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1967788A (en) * | 2005-11-17 | 2007-05-23 | 上海华虹Nec电子有限公司 | Cleanout method after tungsten CMP |
| US20080076263A1 (en) * | 2006-09-21 | 2008-03-27 | Micron Technology, Inc. | Method of reducing electron beam damage on post W-CMP wafers |
| CN102043354A (en) * | 2009-10-23 | 2011-05-04 | 东京毅力科创株式会社 | Developing apparatus and developing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465444A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Method for prolonging service life of test wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102768984B (en) | 2015-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102683243B (en) | Substrate board treatment and substrate processing method using same | |
| JP5006414B2 (en) | Cleaning hardware kit for composite showerhead electrode assembly for plasma processing equipment | |
| CN104377119B (en) | Method for cleaning germanium single crystal polished wafer | |
| CN102446755B (en) | Method for reducing particle defects after chemically mechanical polishing | |
| CN100468676C (en) | Method for forming solder pad of semiconductor device | |
| CN102039281B (en) | Method for cleaning wafer bonding pad surface | |
| CN104009122A (en) | Processing method for reworking silicon wafers in silk-screen printing | |
| CN102214726B (en) | Method for treating flocking on surface of solar silicon slice | |
| CN102087954A (en) | Wafer cleaning method | |
| CN104190652A (en) | Cleaning device and method for medium and large-sized sapphire wafers after patterned etching process | |
| CN102110645B (en) | Cleaning method used after chemical mechanical polishing | |
| CN102768984A (en) | Method for repairing metastable state chemical bond on surface of wafer tungsten connecting layer | |
| CN109755102B (en) | Silicon wafer laser and alkali liquor combined texturing process | |
| CN102039288A (en) | Washing method of wafer | |
| CN101226872A (en) | Method for cleaning silicon material part surface in a polycrystal etching chamber | |
| CN102122615B (en) | Method for pretreating solution for wet etching | |
| CN103242985A (en) | Cleaning agent for antireflective coating of organic light-emitting micro-display and cleaning process | |
| CN101414117A (en) | Method for cleaning photo mask by wet method | |
| CN103956974B (en) | A kind of method of testing confirming the anti-PID performance of semi-finished product cell piece | |
| US9406500B2 (en) | Flux residue cleaning system and method | |
| CN111180312A (en) | Reflow soldering cleaning method suitable for integrated circuit | |
| CN102768943A (en) | Method for restoring surface charge imbalance of wafer tungsten connection layer | |
| CN102629571A (en) | Manufacturing method for array substrate and etching equipment | |
| CN102233339A (en) | Process method for centrifugally cleaning high-density devices | |
| CN112435961A (en) | Sample processing method in wafer failure analysis |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |