CN102763487B - Induction heating device - Google Patents
Induction heating device Download PDFInfo
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- CN102763487B CN102763487B CN201180004202.8A CN201180004202A CN102763487B CN 102763487 B CN102763487 B CN 102763487B CN 201180004202 A CN201180004202 A CN 201180004202A CN 102763487 B CN102763487 B CN 102763487B
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 90
- 230000006698 induction Effects 0.000 title claims abstract description 35
- 230000004907 flux Effects 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 230000035515 penetration Effects 0.000 claims description 6
- 230000001939 inductive effect Effects 0.000 abstract 5
- 235000012431 wafers Nutrition 0.000 description 43
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 27
- 238000012360 testing method Methods 0.000 description 7
- 238000007323 disproportionation reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000000205 computational method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
- H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/36—Coil arrangements
- H05B6/44—Coil arrangements having more than one coil or coil segment
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Induction Heating (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
To provide an induction heating device whereby no heat temperature difference arises in the obverse and reverse faces of a wafer, and with which it is possible, even when a metallic film, etc., is formed on the obverse face of the wafer, to eliminate lack of uniformity in temperature distribution or burn damage to the metallic film caused by the wafer proper emitting heat. [Solution] An induction heating device comprises: a susceptor (18) which is positioned opposite one primary face of a wafer (16); a susceptor (20) which is positioned opposite the other primary face thereof; one group of inductive heating coils (22) which is positioned on the reverse face side of the susceptor (18) to the face thereof which is opposite the wafer (16); another group of inductive heating coils (24) which is positioned on the reverse face side of the susceptor (20) to the face thereof which is opposite the wafer (16), and which is symmetric about the wafer (16) with the one group of inductive heating coils (22); and a power supply unit (14), which is connected to inductive heating coils (22a-22f, 24a-24f) of the one group of induction heating coils (22) and the other group of inductive heating coils (24) in parallel, and in a position relationship which is symmetric about a plane with respect to the wafer (16), such that the phase of the applied current is reversed.
Description
Technical field
The present invention relates to a kind of induction heating equipment, particularly relate to a kind of induction heating equipment that is applicable to semiconductor substrate to carry out monolithic processing.
Background technology
As the induction heating equipment that the semiconductor of monolithic type is heat-treated, object is to control accurately the Temperature Distribution in semiconductor substrate face, and the applicant proposes to have technical scheme as disclosed in Patent Document 1.
The brief configuration of patent documentation 1 disclosed induction heating equipment is as described below.Configure adjacently a plurality of circular load coils that form, and can control the input electric power of each heater coil, this heater coil is set heated perimeter as single heating region.Upper surface at load coil disposes the pedestal as heater.Upper surface at pedestal configures the wafer as heating object.
According to the induction heating equipment of said structure, can avoid the impact of mutual inductance, and the electric power of the load coils that individually a plurality of adjacency of control inputs configure.Therefore, can add thermal control accurately so that uniformity of temperature profile or keep temperature gradient arbitrarily in the face of wafer to Temperature Distribution in the face of wafer.
Patent documentation 1:(Japan) JP 2009-239098 communique
According to the disclosed induction heating equipment of patent documentation 1, can instant heating, and can control Temperature Distribution in the face of wafer.
On the other hand, in the situation that hope is carried out instant heating quickly, may cause producing temperature difference between surface at wafer, the back side, thereby make wafer produce warpage etc.As the method for eliminating the problems referred to above, can consider to utilize pair of base to clip wafer, and the method heating from surface, this two wafer-facing of the back side.But, even in this case, in the situation that carry out independently of one another the thermal control that adds at surface, the back side, also there is the even unfavorable condition of temperature distributing disproportionation that causes wafer surface, the back side.In addition, in the situation that the wafer of effects on surface metal clad film etc. heats, because the impact of magnetic leakage flux makes the sensed heating of wafer itself, thereby likely make the heating balance collapse of wafer integral body, or metal film scaling loss.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of induction heating equipment, it can not produce temperature difference at the wafer surface as heating object, the back side, even and if in the situation that wafer surface is formed with metal film etc., also can avoid because wafer heating itself causes the even or metal film scaling loss of temperature distributing disproportionation.
In order to achieve the above object, induction heating equipment of the present invention is characterised in that to possess: the heater relatively configuring with a first type surface of heating object; Another heater relatively configuring with another first type surface of described heating object; A load coil group in the rear side configuration of the opposite face relative with described heating object of a described heater; In the rear side of the opposite face relative with described heating object of described another heater, another load coil group that the described heating object of take configures symmetrically as basic point and a described load coil group; To become to take the phase place of electric current of the load coil input that described heating object is the configuration relation of basic point in face symmetry the power supply device that reverse mode is connected with described load coil, described load coil be configured to make a described load coil group and described another load coil group arranged side by side.
In addition, on the basis of induction heating equipment with above-mentioned feature, preferably, a described load coil group and described another load coil group are formed respectively load coil circular and that be configured on concentric circles and are formed by a plurality of.
By said structure, utilize single load coil to process the heating region of same radius.Therefore, the large wafer of diameter is being carried out to aspect monolithic heating, easily control the balance of dispelling the heat and heating.
In addition, in thering is the induction heating equipment of above-mentioned feature, preferably, form the load coil formation group respectively of configuration symmetrically in each load coil of a described load coil group and described another load coil group, described power supply device has a plurality of for supply with the inverters of the electric current that current value is equal to the load coil that forms each group.
By said structure, to each load coil of formation group, supply with the equal electric current of current value.Therefore, can obtain the surface of heating object, the heating balance at the back side.Thereby the warpage that easily suppresses heating object (wafer).
And, in thering is the induction heating equipment of above-mentioned feature, preferably, the thickness of a described heater and described another heater is being made as respectively to t, and the length of penetration of the magnetic flux of a described heater and described another heater is made as in the situation of δ, to meet the mode of t < 1.5 δ, sets the thickness of a described heater and described another heater.
The in the situation that of said structure, the magnetic flux (magnetic leakage flux) that sees through heater may directly arrive heating object.But, by said structure, magnetic leakage flux is cancelled out each other.By making the thickness attenuation of heater, can play the effect that is accompanied by the minimizing of thermal capacity and increases the efficiency of heating surface, thereby be conducive to heat up rapidly.
Invention effect
According to the induction heating equipment with above-mentioned feature, surface, the back side that can be suppressed at as the wafer of heating object produce temperature difference.In addition, even in the situation that wafer surface is formed with metal film etc., also can avoid because wafer heating itself causes the even or metal film scaling loss of temperature distributing disproportionation.
Accompanying drawing explanation
Fig. 1 means the integrally-built block diagram of the induction heating equipment of execution mode.
Fig. 2 means the exploded perspective view of the structure of heating part.
Fig. 3 is for current phase and the figure that eliminates the relation of magnetic leakage flux are described.
Fig. 4 means and utilizes linear interpolation to carry out the figure of the example of temperature prediction.
Fig. 5 means and based on electric power command value, the temperature prediction that utilizes linear interpolation and carry out is carried out the figure of the example of revised temperature prediction value.
Fig. 6 means the figure of example of situation that sets the electric power command value of each heating region of input based on temperature prediction value.
Description of reference numerals
10 induction heating equipment 12 heating part 14 power supply units
16 wafer 18 pedestal 20 pedestals
22 1 load coil group 22a～22f load coils
24 another load coil group 24a～24f load coils
26 (26a～26c) temperature sensor, 28 three-phase alternating-current supplies
30 rectifier 32 (32a～32f) DC chopper (チ ヨ Star パ)
34 (34a～34b) inverter, 36 temperature control parts
Embodiment
Below, with reference to accompanying drawing, the execution mode of induction heating equipment of the present invention is described in detail.
Fig. 1 means the integrally-built block diagram of the induction heating equipment of execution mode.In addition, Fig. 2 means the exploded perspective view of structure of heating part of the induction heating equipment of execution mode.The induction heating equipment 10 of present embodiment mainly consists of heating part 12, power supply unit (power supply device) 14.Heating part 12 is mainly by the pedestal 18 as a heater, form as the pedestal 20 of another heater, load coil group 22 and another load coil group 24.
By said structure, can be from surface, this two wafer-facing 16 of the back side heat, thus surface, the back side that can be suppressed at wafer 16 produce temperature difference.In addition, owing to can being suppressed at the surface, the back side of wafer 16, produce temperature difference, therefore can suppress the warpage of the wafer 16 that the temperature difference due to surface, the back side causes.
The relative configuration of first type surface of another load coil group 24 and pedestal 20, contrary with a wafer configuration face side.Between pedestal 20 and another load coil group 24, can configure not shown support unit, by utilizing quartz plate (not shown) etc. to block coil configuration region and processing region, also can prevent from polluting.With an above-mentioned load coil group 22 similarly, another load coil group 24 is also by being configured in a plurality of load coil 24a～24f that form circular (roughly C shape) on concentric circles and forming adjacently.At this, the load coil 22a～22f that forms a load coil group 22 and the load coil 24a～24f that forms another load coil group 24 be take wafer 16 and at thickness direction face, are configured symmetrically as basic point.In the present embodiment, each load coil 22a～22f, the 24a～24f that makes the configuration relation in face symmetry at thickness direction be formation group respectively, and Yi Gezuwei unit forms single heating region (in the present embodiment, for 1～region, region 6), described load coil 22a～22f, 24a～24f are connected with the power supply unit 14 being elaborated below.
For example as shown in Figure 1, power supply unit 14 mainly consists of three-phase alternating-current supply 28, rectifier 30, DC chopper 32 (32a～32f), inverter 34 (34a～34f) and temperature control part 36.
Rectifier 30 is to be converted to direct current from the three-phase alternating current of three-phase alternating-current supply 28 inputs, and to the pure transformation component that is connected in DC chopper 32 outputs thereafter.DC chopper 32 is the flow rates that change from the electric current of rectifier 30 outputs, and changes the voltage adjustment part of the voltage of the electric current of inputting inverter 34.
Inverter 34 is to utilize DC chopper 32 to carry out the inverse transformation portion that direct current after voltage adjustment is converted to alternating current and is supplied to load coil group 22,24.It should be noted that, the inverter 34 of the induction heating equipment 10 that present embodiment is cited is by the inverter of the series resonance-type of load coil group 22,24 and resonant capacitor configured in series.In addition, the load coil (for example, load coil 22a and load coil 24a, load coil 22b with load coil 24b etc.) that is formed for forming the group of each heating region be take group, and as unit, inverter 34 and the DC chopper 32 of group are connected respectively with separately.In addition, the input signal based on from temperature control part 36 to from inverter 34 to load coil 22a～22f, the output current of 24a～24f output controls.Be positioned at a load coil group 22 and be parallel-connected to each inverter 34a～34f with each load coil (load coil of formation group) of the symmetric position of another load coil group 24 symmetries.In addition, as shown in Figure 3, load coil 22a～22f, 24a～24f that each inverter 34 becomes reverse mode and each group of above-mentioned formation with the phase place to forming the electric current of each load coil 22a～22f, 24a organizing～24f input are connected.
The in the situation that of said structure, as shown in Figure 3, the magnetic leakage flux from load coil 22a that sees through pedestal 18 is opposite each other with the direction of rotation of the magnetic leakage flux from load coil 24a that sees through pedestal 20.Therefore, two magnetic leakage fluxes cancel each other out.
At this, in the situation that the surface of hypothesis wafer 16 is formed with metal film, in the past, magnetic leakage flux also dropped into the metal film on wafer 16 surfaces, thereby caused producing on wafer 16 surfaces the heating being caused by eddy current.On the other hand, in the induction heating equipment 10 of present embodiment, by eliminating the magnetic leakage flux as the main cause via metal film heating, can avoid due to magnetic leakage flux, metal film directly being heated, and can avoid the heating balance collapse of wafer 16 integral body.
In the past, as suppress producing one of structure of magnetic leakage flux, only expected thickening the method for the thickness of pedestal 18,20.But in the situation that the structure of present embodiment, the thickness of pedestal 18,20 can be thinned to the scope that does not produce magnetic flux bleed-through.This is to cancel out each other and to having the wafer of metal film, do not exert an influence because see through the magnetic leakage flux of pedestal 18,20.
At this, in the situation that the length of penetration that electric current is permeated to pedestal 18,20 is made as δ, so that the thickness t of pedestal 18,20 is less than 1.5 δ,, the mode that makes the relation of t and δ meet t < 1.5 δ is set the thickness of pedestal 18,20, thereby do not produce the leakage of magnetic flux, therefore, can effectively utilize the effect of bringing because eliminating magnetic leakage flux.In addition, if make the thickness attenuation of pedestal 18,20, the thermal capacity of pedestal reduces, thereby increases with respect to the heating ratio that drops into magnetic flux.Therefore in the situation that wafer 16 is heated up rapidly, be, favourable.
According to the power supply unit 14 of said structure, can control from the voltage of the electric current of rectifier 30 outputs by DC chopper 32, and can change from the direct current of DC chopper 32 outputs by inverter 34, and its frequency is adjusted.Therefore, can control output powers by DC chopper 32, and the phase place that can a plurality of coils be configured to load coil group 22 forming and another load coil group's 24 power frequency adjacently by 34 pairs of inputs of inverter is adjusted.By making the phase preserving synchronous (phase difference is zero or is similar to zero) of the frequency of output current, or the interval that the phase preserving that makes the frequency of output current is set, thereby can avoid in abutting connection with the impact of mutual inductance between load coil 22a～22f, the 24a～24f of configuration.In addition, by controlling inputting respectively the input electric power of a plurality of load coil 22a～22f, 24a～24f, can and then control the Temperature Distribution of wafer 16 pedestal 18,20.
In the induction heating equipment 10 of said structure, when wafer 16 is heat-treated, implement following control.First, to a plurality of load coil 22a～22f, 24a～24f, input respectively the electric power of regulation, after pedestal 18,20 is heated, load coil by being disposed at formation group (for example respectively, load coil 22a and load coil 24a, load coil 22b and load coil 24b etc.) between temperature sensor 26 detect the temperature of heaters, and testing result is sent to temperature control part 36.In temperature control part 36, first, implement according to the linear interpolation of the temperature of the pedestal 20 of each heating region of temperature estimation of test point (being three points the present embodiment in the situation that).At this, as shown in Figure 4, linear interpolation refers to, the temperature that links test point by straight line, and on this straight line, the position relationship of each heating region being combined (position that marks heating region on straight line), thereby the temperature that is each heating region by the temperature estimation of the mark point on straight line.
Then, in temperature control part 36, the power value (command value) of the supposition temperature obtaining by linear interpolation and each load coil of current input 24a～24f (22a～22f) is associated, thereby the supposition temperature obtaining by linear interpolation is revised to (with reference to Fig. 5).Specifically, for current command value, if 1 < region 2, region can infer that the temperature in region 2 is high.Therefore, implement to reduce the temperature in region 1, the correction that improves the temperature in region 2.By carrying out above-mentioned correction, can access the temperature prediction value of the equalized temperature of considering between each heating region.In addition, for correction, make from put on heating region 1 load coil 22a, 24a command value with from putting on ratio (1/ region 2, region of command value of load coil 22b, the 24b of heating region 2, or 2/ region 1, region) gradient deriving, overlaps with the test point obtaining by linear interpolation.By straight line, connect respectively the interrupted straight line obtaining due to coincidence, thereby also can obtain considering the temperature prediction value of the equalized temperature between each heating region.At this, for obtaining the correction of temperature prediction value, be preferably, according to the characteristic of each device, test or simulate, thereby meet the correction of above-mentioned test or analog result.
With respect to the temperature prediction value obtaining as mentioned above, temperature control part 36 calculates the electric power command value (with reference to Fig. 6) of the heating (temperature correction) that is used for not existing temperature gradient (gradient that links the straight line between heating region).At this, the calculating of electric power command value adopts following computational methods: according to the characteristic of each device, test or simulate, thereby calculate the electric power command value of the result that meets simulation etc.
It should be noted that, as general temperature correction, the electric power command value of ratio corresponding to having the broken line graph of the gradient contrary with the gradient obtaining by temperature prediction value (making the gradient turning upside down of the broken line graph shown in Fig. 6), also can be used as the temperature correction value that the temperature of each heating region is revised.
To the inverter 34 being connected with each load coil group 22,24 and DC chopper 32, export the electric power command value obtaining as mentioned above, thereby control inputting the input electric power of each load coil 22a～22f, 24a～24f.
Because 10 pairs of wafers 16 of the induction heating equipment by said structure heat, therefore can suppress the surface of wafer 16, the temperature difference at the back side.In addition, even in the situation that the surface of wafer 16 is formed with metal film etc., also can avoid causing temperature distributing disproportionation even because wafer 16 itself generates heat.
In the execution mode shown in Fig. 1, the load coil of formation group (for example, load coil 22a and load coil 24a) is configured to shared inverter and DC chopper and is connected.But, by the load coil of formation group is connected with inverter and DC chopper separately respectively, thereby can carry out more detailed Temperature Distribution control.
Claims (8)
1. an induction heating equipment, is characterized in that, possesses:
The heater relatively configuring with a first type surface that is formed with from the teeth outwards the wafer of metal film;
Another heater relatively configuring with another first type surface of described wafer;
A load coil group in the rear side configuration of the opposite face relative with described wafer of a described heater;
In the rear side of the opposite face relative with described wafer of described another heater, another load coil group that the described wafer of take configures symmetrically as basic point and a described load coil group;
To become to take the phase place of electric current of the load coil input that described wafer is the configuration relation of basic point in face symmetry the power supply device that reverse mode is connected with described load coil, described load coil is configured to each load coil parallel connection that makes to be positioned in a described load coil group and described another load coil group symmetric position.
2. induction heating equipment as claimed in claim 1, is characterized in that, a described load coil group and described another load coil group are formed respectively load coil circular and that be configured on concentric circles and formed by a plurality of.
3. induction heating equipment as claimed in claim 1, is characterized in that, forms the load coil formation group respectively of configuration symmetrically in each load coil of a described load coil group and described another load coil group,
Described power supply device has a plurality of for supply with the inverter of the electric current that current value is equal to the load coil that forms each group.
4. induction heating equipment as claimed in claim 2, is characterized in that, forms the load coil formation group respectively of configuration symmetrically in each load coil of a described load coil group and described another load coil group,
Described power supply device has a plurality of for supply with the inverter of the electric current that current value is equal to the load coil that forms each group.
5. induction heating equipment as claimed in claim 1, it is characterized in that, the thickness of a described heater and described another heater is being made as respectively to t, and the length of penetration of the magnetic flux of a described heater and described another heater is made as in the situation of δ, to meet the mode of t<1.5 δ, sets the thickness of a described heater and described another heater.
6. induction heating equipment as claimed in claim 2, it is characterized in that, the thickness of a described heater and described another heater is being made as respectively to t, and the length of penetration of the magnetic flux of a described heater and described another heater is made as in the situation of δ, to meet the mode of t<1.5 δ, sets the thickness of a described heater and described another heater.
7. induction heating equipment as claimed in claim 3, it is characterized in that, the thickness of a described heater and described another heater is being made as respectively to t, and the length of penetration of the magnetic flux of a described heater and described another heater is made as in the situation of δ, to meet the mode of t<1.5 δ, sets the thickness of a described heater and described another heater.
8. induction heating equipment as claimed in claim 4, it is characterized in that, the thickness of a described heater and described another heater is being made as respectively to t, and the length of penetration of the magnetic flux of a described heater and described another heater is made as in the situation of δ, to meet the mode of t<1.5 δ, sets the thickness of a described heater and described another heater.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011016800A JP4901998B1 (en) | 2011-01-28 | 2011-01-28 | Induction heating device |
| JP2011-016800 | 2011-01-28 | ||
| PCT/JP2011/072372 WO2012101867A1 (en) | 2011-01-28 | 2011-09-29 | Induction heating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102763487A CN102763487A (en) | 2012-10-31 |
| CN102763487B true CN102763487B (en) | 2014-04-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201180004202.8A Active CN102763487B (en) | 2011-01-28 | 2011-09-29 | Induction heating device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4901998B1 (en) |
| KR (1) | KR101196555B1 (en) |
| CN (1) | CN102763487B (en) |
| WO (1) | WO2012101867A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5127987B1 (en) * | 2012-02-16 | 2013-01-23 | 三井造船株式会社 | Induction heating device |
| DE102016119328A1 (en) | 2016-10-11 | 2018-04-12 | Osram Opto Semiconductors Gmbh | Heating device, method and system for the production of semiconductor chips in the wafer composite |
| CN114521035B (en) * | 2020-11-18 | 2024-04-16 | 中国科学院微电子研究所 | Direct induction heating device and heating method for wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006319123A (en) * | 2005-05-12 | 2006-11-24 | Sumco Corp | Apparatus and method for epitaxial growth |
| JP2008159759A (en) * | 2006-12-22 | 2008-07-10 | Mitsui Eng & Shipbuild Co Ltd | Heat treating method and apparatus using induction heating |
| JP2009239098A (en) * | 2008-03-27 | 2009-10-15 | Mitsui Eng & Shipbuild Co Ltd | Wafer heat treatment system |
-
2011
- 2011-01-28 JP JP2011016800A patent/JP4901998B1/en active Active
- 2011-09-29 WO PCT/JP2011/072372 patent/WO2012101867A1/en active Application Filing
- 2011-09-29 KR KR1020127006262A patent/KR101196555B1/en active IP Right Grant
- 2011-09-29 CN CN201180004202.8A patent/CN102763487B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006319123A (en) * | 2005-05-12 | 2006-11-24 | Sumco Corp | Apparatus and method for epitaxial growth |
| JP2008159759A (en) * | 2006-12-22 | 2008-07-10 | Mitsui Eng & Shipbuild Co Ltd | Heat treating method and apparatus using induction heating |
| JP2009239098A (en) * | 2008-03-27 | 2009-10-15 | Mitsui Eng & Shipbuild Co Ltd | Wafer heat treatment system |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120098597A (en) | 2012-09-05 |
| KR101196555B1 (en) | 2012-11-01 |
| WO2012101867A1 (en) | 2012-08-02 |
| JP2012156111A (en) | 2012-08-16 |
| JP4901998B1 (en) | 2012-03-21 |
| CN102763487A (en) | 2012-10-31 |
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