CN102760811A - Light-emitting component structure and manufacture method thereof - Google Patents
Light-emitting component structure and manufacture method thereof Download PDFInfo
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- CN102760811A CN102760811A CN2011101100889A CN201110110088A CN102760811A CN 102760811 A CN102760811 A CN 102760811A CN 2011101100889 A CN2011101100889 A CN 2011101100889A CN 201110110088 A CN201110110088 A CN 201110110088A CN 102760811 A CN102760811 A CN 102760811A
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000004575 stone Substances 0.000 claims description 75
- 239000004065 semiconductor Substances 0.000 claims description 54
- 239000013078 crystal Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 13
- 229910002601 GaN Inorganic materials 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 238000010276 construction Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
A light-emitting component structure comprises a substrate and epitaxial transistors. The substrate is provided with a surface and a plurality of arc-shaped protrusions disposed at intervals on the surface. The arc-shaped protrusions are provided with arc-shaped curves. The arc-shaped faces are connected with the surface. Slope absolute value relative to the surface increases along a direction close to the substrate. The epitaxial transistors are disposed on the protrusions on the surface of the substrate. The epitaxial transistors are matched with the protrusions to define a plurality of annular gaps. The gaps surround the arc-shaped protrusions. The invention further provides a manufacture method of the light-emitting component structure. Light extraction efficiency of the light-emitting component is improved.
Description
Technical field
The present invention relates to a kind of light emitting element structure and preparation method thereof, and be particularly related to preferable light emitting element structure of a kind of luminous efficiency and preparation method thereof.
Background technology
In recent years; Because the luminous efficiency of light-emitting diode constantly promotes; Make light-emitting diode replace fluorescent lamp and white heat bulb gradually in some field; For example need Dashboard illumination, the traffic signal light of scanner lamp source, Backlight For Liquid Crystal Display Panels or the front light-source automobile of reaction at a high speed, and general lighting device etc.General common light-emitting diode uses the semi-conducting material of nitride to form, and most of aforesaid light-emitting diodes are formed on the sapphire substrate with crystal type of heap of stone.
Traditional light emitting diode construction can comprise usually under a substrate, the N type and limit to layer, a N type electrode and a P type electrode on limitation layer (N type cladding layer), a multiple quantum trap structure (multiple quantum well structure), the P type.Limiting to layer on limitation layer, multiple quantum trap structure and the P type under the N type is disposed on the substrate in regular turn; And N type electrode and P type electrode electrically connect under the N type limitation layer on limitation layer and the P type respectively; Wherein apply driving voltage in N type electrode and P type electrode, but just the driven for emitting lights diode structure is luminous.
In general; Light emitting diode construction is by driving and when luminous; Because the refractive index of limitation layer is close under substrate and the N type, so light can also can be limited by angle and degree that substrate reflected, will cause the light taking-up efficient of light emitting diode construction can't obtain lifting thus.Therefore, how do not increasing under cost and the situation that changes material, and can be by structural design, and then the light that can promote light emitting diode construction effectively taking out efficient, is an important problem in fact.
Summary of the invention
The present invention provides a kind of light emitting element structure, and it has preferable luminous efficiency.
The present invention provides a kind of manufacture method of light emitting element structure in addition, and it can form above-mentioned light emitting element structure.
Other purposes of the present invention and advantage can further be understood from disclosed technical characterictic.
For reaching above-mentioned one or part or all of purpose or other purposes, one embodiment of the invention propose a kind of light emitting element structure, and it comprises substrate and crystal of heap of stone.Substrate has that the surface is spaced with several and the arc convex portion of convex surfaces.These arc convex portions have arc-shaped curved surface respectively, and wherein these arc-shaped curved surfaces are connected with the surface, and each arc-shaped curved surface with respect to the slope absolute value on surface along with increasing progressively on the direction near substrate.Crystal of heap of stone is disposed on the surface and these arc convex portions of substrate.Crystal of heap of stone matches with these arc convex portions and defines several annular gaps, and wherein each annular gap is around each arc convex portion.
In one embodiment of this invention, crystal entity of heap of stone connects the regional area of these arc convex portions, and crystal of heap of stone and each arc convex portion not entity be connected and keep these annular gaps of part formation in space.
In one embodiment of this invention, these annular gaps ratio of occupying the surface area of each arc-shaped curved surface drops between 20% to 80% in fact.
In one embodiment of this invention, the distance at the top of wantonly two adjacent these arc convex portions drops in fact between 1.5 μ m to the 6 μ m.
In one embodiment of this invention, the ratio of the width of each arc convex portion and height drops between 75% to 200% in fact.
In one embodiment of this invention, the height of each arc convex portion drops in fact between 1.4 μ m to the 1.6 μ m.
In one embodiment of this invention, substrate comprises a sapphire (sapphire) substrate, a carborundum (SiC) substrate or a silicon (Si) substrate.
In one embodiment of this invention, crystal of heap of stone has first type semiconductor layer, local second type semiconductor layer that covers the luminescent layer of first type semiconductor layer and cover luminescent layer from substrate in regular turn on away from the direction of substrate.
In one embodiment of this invention, the material of crystal of heap of stone comprises the semiconducting compound of III family and V group element.
In one embodiment of this invention, first type semiconductor layer is the n type semiconductor layer, and second type semiconductor layer is the p type semiconductor layer.
In one embodiment of this invention, light emitting element structure also includes first electrode and second electrode, and wherein first electrode is formed on first type semiconductor layer, and second electrode is formed on second type semiconductor layer.
Another embodiment of the present invention proposes a kind of manufacture method of light emitting element structure, and it comprises the following steps at least.At first; Substrate is provided; Wherein substrate has that the surface is spaced with several and the arc convex portion of convex surfaces, and these arc convex portions have respectively and the surperficial arc-shaped curved surface that is connected, and each arc-shaped curved surface with respect to the slope absolute value on surface along with increasing progressively on the direction near substrate.Then, form crystal of heap of stone on the surface and these arc convex portions of substrate, crystal wherein of heap of stone matches with these arc convex portions and defines several annular gaps, and each annular gap is around each arc convex portion.
In one embodiment of this invention, forming crystal of heap of stone comprises the following steps in the method for substrate.At first, form first type semiconductor layer on substrate.Afterwards, form luminescent layer on first type semiconductor layer.Then, form second type semiconductor layer on luminescent layer.
In one embodiment of this invention; Forming first type semiconductor layer comprises in the very first time and in second time that first type semiconductor layer is of heap of stone brilliant on substrate in regular turn in the method for substrate; Define these annular gaps so that first type semiconductor layer matches with these arc convex portions, wherein in the very first time, brilliant speed of heap of stone longitudinally is greater than horizontal of heap of stone brilliant speed; And in second time, horizontal of heap of stone brilliant speed is greater than building brilliant speed longitudinally.
In one embodiment of this invention, the manufacture method of light emitting element structure also comprises and forms first electrode on first type semiconductor layer, and forms second electrode and be formed on second type semiconductor layer.
Based on above-mentioned; Light emitting element structure of the present invention is formed on the patterned substrate by building crystal; Wherein patterned substrate has several and is spaced and the arc convex portion of convex surfaces; Therefore just can make crystal entity of heap of stone connect the regional area of these arc convex portions by brilliant speed laterally of heap of stone in the control brilliant process of heap of stone and brilliant speed vertically of heap of stone, entity connect and keeps the part in space then to form the annular gap around arc convex portion.So,, just be easy to be reflected by the annular gap, and can improve the light extraction efficiency of light emitting element structure when light emitting element structure is produced the light time by driving in inside.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and conjunction with figs. elaborates as follows.
Description of drawings
Figure 1A is the partial cutaway diagrammatic sketch of the light emitting element structure of one embodiment of the invention.
Figure 1B is the local top view of light emitting element structure shown in Figure 1.
Fig. 2 is the partial cutaway diagrammatic sketch of the light emitting element structure of another embodiment of the present invention.
Fig. 3 A～Fig. 3 F is the making flow chart of the light emitting element structure of one embodiment of the invention.
The main element symbol description:
100: light emitting element structure
110: substrate
112: the surface
114: arc convex portion
114b: top
120: crystal of heap of stone
122: the first type semiconductor layer
124: luminescent layer
126: the second type semiconductor layer
200: light emitting element structure
110a: substrate
114a: arc convex portion
S1: arc-shaped curved surface
D1: distance
D2: width
H1: highly
130: the annular gap
E1: first electrode
E2: second electrode
L1: light
S2: arc-shaped curved surface
Embodiment
About aforementioned and other technology contents, characteristics and effect of the present invention, in the following detailed description that cooperates with reference to a graphic preferred embodiment, can clearly appear.The direction term of being mentioned in following examples, for example: upper and lower, left and right, front or rear etc. only are the directions with reference to annexed drawings.Therefore, the direction term of use is to be used for explaining not to be to be used for limiting the present invention.
Figure 1A is the partial cutaway diagrammatic sketch of the light emitting element structure of one embodiment of the invention; Figure 1B is the local top view of the light emitting element structure shown in Figure 1A; Wherein explanation for ease; Figure 1B only demonstrates substrate and is positioned at the technical characterictic of the annular gap on the substrate, is positioned at the rete on the substrate and omit other.Please be simultaneously with reference to Figure 1A and Figure 1B, the light emitting element structure 100 of present embodiment comprises a substrate 110 and a crystal 120 of heap of stone.Substrate 110 has that a surface 112 is spaced with several and the arc convex portion 114 of convex surfaces 112.Specifically, these arc convex portions 114 have an arc-shaped curved surface S1 respectively, and wherein these arc-shaped curved surfaces S1 112 is connected with the surface, and each arc-shaped curved surface S1 with respect to surperficial 112 slope absolute value along with increasing progressively on the direction near substrate 110.Particularly; These arc convex portions 114 for example are the lug bosses with a shell shape; But be not limited thereto; It also can be the curved surface of hemispheric curvature, ellipsoidal curvature, hyp curvature or other possible smooth and continuous, this part can depend on each arc convex portion 114 width d2 and height H 1 ratio and decide.
For instance, the width d2 of arc convex portion 114 and the ratio of height H 1 are increasing, then represent the slope variation of arc-shaped curved surface S1 less, and it is promptly milder to anticipate; Relatively, if the ratio of the width d2 of arc convex portion 114 and height H 1 is more and more littler, then represent the slope variation of arc-shaped curved surface S1 can be bigger, it be promptly more precipitous to anticipate.Therefore, the 114 end users' of these arc convex portions demand and design and decide, above-mentioned being merely illustrates.In the present embodiment; The top 114b of wantonly two adjacent these arc convex portions 114 can drop in fact between 1.5 μ m to the 6 μ m apart from d1; And the ratio of the width d2 of each arc convex portion 114 and height H 1 can drop between 75% to 175% in fact; Wherein the height H 1 of each arc convex portion 114 can drop in fact between 1.4 μ m to the 1.6 μ m, but is not limited thereto, this part depend on the arc convex portion 114 that the user adopts width d2 and height H 1 ratio and decide.
In addition, crystal 120 of heap of stone is disposed on the surface 112 and these arc convex portions 114 of substrate 110, shown in Figure 1A.Particularly, crystal 120 of heap of stone matches with these arc convex portions 114 and defines several annular gaps 130, and wherein each annular gap 130 is around each arc convex portion 114, shown in Figure 1A and Figure 1B.In the present embodiment; Annular gap 130 around each arc convex portion 114 for example is a ring seal gap; Wherein the generation type of this annular gap 130 can form with vertically building the different of brilliant speed by control brilliant speed laterally of heap of stone in crystal 120 of heap of stone is formed at the process of substrate 110, and wherein the detailed generation type about annular gap 130 will describe in subsequent paragraph.In other words; Be formed at crystal of heap of stone 120 on the substrate 110 and can entities connect the regional area of these arc convex portions 114, just and crystal of heap of stone 120 and each arc convex portion 114 not entity be connected and keep the part in a space can constitute the annular gap 130 shown in Figure 1A and Figure 1B.
In the present embodiment; Crystal 120 of heap of stone has second type semiconductor layer 126 that one first type semiconductor layer, 122, the one local luminescent layer 124 and that covers first type semiconductor layer 122 covers luminescent layer 124 from substrate 110 in regular turn on away from the direction of substrate 110; Wherein first type semiconductor layer 122 can be a n type semiconductor layer; Second type semiconductor layer 126 can be a p type semiconductor layer, and luminescent layer 124 can be the multiple quantum trap layer.
In addition; The material of crystal 120 of heap of stone can be to select the semiconducting compound of III family and V group element for use; Therefore the material of first type semiconductor layer 122 and second type semiconductor layer 126 can be selected binary compound (binary compound) for use, as: gallium nitride, aluminium nitride, indium nitride; Ternary compound (ternary compound), as: aluminium gallium nitride alloy, indium gallium nitride, aluminum indium nitride, aluminum gallium arsenide, InGaAsP; And quaternary compound (quaternary compound); As: indium gallium nitride aluminium, AlGaInP or combinations thereof; And by the doping impurity to form first N-type semiconductor N and second type semiconductor layer; This part material selection is looked user's demand and design and is decided, wherein present embodiment with gallium nitride as illustrating.
In the present embodiment, light emitting element structure 100 also can include one first electrode E1 and one second electrode E2, and wherein the first electrode E1 is formed on first type semiconductor layer 122, and the second electrode E2 is formed on second type semiconductor layer 126.The first electrode E1 and the second electrode E2 can be simple layers or multiple layer metal stacks; And the material of the two can also be selected for use like conductivity good metal, above-mentioned alloy, above-mentioned metal oxide, above-mentioned metal nitrides such as gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminium, zinc, or the material of combinations thereof.
Specifically, when the user applies driving voltage to the first electrode E1 and the second electrode E2, just can be in the light emitting element structure 100 inner smooth L1 that produce, wherein light L1 outgoing just can form a kind of lighting source when light emitting element structure 100 is outside.In the present embodiment and since annular gap 130 are crystal 120 of heap of stone with each arc convex portion 114 not entity be connected and keep the part in space, therefore, annular gap 130 can be an air gap or a vacuum gap.With the annular gap is the air gap; Because the refractive index of air is 1.00027; Therefore crystal 120 of heap of stone and each arc convex portion 114 not part that is connected of entity just can produce higher refringence, as: when building crystal 120 and selecting the gallium nitride material for use, its refractive index is n=2.5.That is to say, be positioned at crystal 120 inner light L1 of heap of stone and when being passed to annular gap 130, just be easy to and reflected by annular gap 130, and then improve the light extraction efficiency of light emitting element structure 100.In addition; Because annular gap 130 also is a curved surface with the surface that crystal 120 of heap of stone (like first type semiconductor layer 122) contacts; Therefore the light L1 that is reflected by annular gap 130 just outgoing more easily outside light emitting element structure 100, the reason that this also can obtain to promote for the light extraction efficiency of light emitting element structure 100.
In general; The ratio of surface area that annular gap 130 occupies each arc-shaped curved surface S1 is high more; Then the light extraction efficiency of light emitting element structure 100 also can promote thereupon, but for fear of the factor of handling, this ratio can't reach 100%; If therefore make the light extraction efficiency of light emitting element structure 100 obtain to promote; The surface area that annular gap 130 occupies each arc-shaped curved surface S1 just can drop in the enforceable scope, and particularly, the ratio that annular gap 130 occupies the surface area of each arc-shaped curved surface S1 can drop between 20% to 80% in fact.
In addition, above-mentioned substrate 110 can be a sapphire (sapphire) substrate, a carborundum (SiC) substrate, a silicon (Si) substrate or other suitable substrates, wherein present embodiment with sapphire substrate as illustrating, but not as limit.
Know based on above-mentioned; The light emitting element structure 100 of present embodiment mainly is to be formed on the patterned substrate 110 by building crystal 120; Wherein patterned substrate 110 has several and is spaced and the arc convex portion 114 of convex surfaces 112; Therefore just can be by brilliant speed laterally of heap of stone in the control brilliant process of heap of stone and brilliant speed vertically of heap of stone; Make crystal 120 entities of heap of stone connect the regional area of these arc convex portions 114, entity does not connect and keeps the part in space then to form the annular gap 130 around arc convex portion 114.Thus, when light emitting element structure 100 produced light L1 by driving and in inside, just being easy to meeting reflected by annular gap 130, and can improve the light extraction efficiency of light emitting element structure 100.In addition; Because the surface that annular gap 130 contacts with crystal 120 of heap of stone also is curved surface; Therefore the light L1 that is reflected by annular gap 130 also outgoing more easily outside light emitting element structure 100, the reason that this also can obtain to promote for the light extraction efficiency of light emitting element structure 100.
Fig. 2 is the partial cutaway diagrammatic sketch of the light emitting element structure of another embodiment of the present invention.Please refer to Fig. 2; The light emitting element structure 200 of present embodiment adopts identical notion and principle with aforementioned light emitting element structure 100; The two difference is: the width d2 of the 114a of arc convex portion on the substrate 110a and the ratio of height H 1 are bigger, and its ratio drops between 125% to 200% in fact.Particularly, because the ratio of the width d2 of the 114a of arc convex portion and height H 1 big (compared to the arc convex portion 114 shown in Figure 1A), so represent the slope variation of arc-shaped curved surface S2 less, it is promptly milder to anticipate.Thus, when crystal 120 of heap of stone was formed at substrate 110a, annular gap 130a just can improve in the ratio of the surface area that occupies each arc-shaped curved surface S1, and then can promote the light extraction efficiency of light emitting element structure 200.
Need to prove; If the width d2 of the 114a of arc convex portion and the ratio of height H 1 are when excessive; The light extraction efficiency of light emitting element structure 200 also can be weakened; Therefore the width d2 of the 114a of arc convex portion on the substrate 110a and the ratio of height H 1 drop in fact between 75% to 200%, and light emitting element structure 200 can present preferable light extraction efficiency after driving.
Fig. 3 A～Fig. 3 F is the making flow chart of the light emitting element structure of one embodiment of the invention.Please at first, aforesaid substrate 110 be provided earlier with reference to figure 3A, wherein describe and just to repeat no more at this with reference to above-mentioned about the concrete structure of this substrate 110.
Afterwards, form the surface 112 and arc convex portion 114 of aforesaid first type semiconductor layer 122, shown in Fig. 3 B in substrate 110.In the present embodiment, the method that forms first type semiconductor layer 122 for example is to use traditional crystal type of heap of stone.Specifically, the of heap of stone brilliant thickness of first type semiconductor layer 122 is before crystalline substance of heap of stone to a preset level line 310, and the of heap of stone brilliant speed of its longitudinal P 2 can equal the of heap of stone brilliant speed of horizontal P1.
Then; The of heap of stone brilliant thickness of first type semiconductor layer 122 is of heap of stone brilliant to a preset level line 310; Just can accelerate brilliant speed of heap of stone longitudinally or weaken horizontal of heap of stone brilliant speed; Make that the of heap of stone brilliant speed of longitudinal P 2 can so just can form the form shown in Fig. 3 C greater than the of heap of stone brilliant speed of horizontal P1 in a very first time.
Then; Of heap of stone brilliant to the thickness of arc convex portion, the of heap of stone brilliant speed of longitudinal P 2 is become the of heap of stone brilliant speed of the of heap of stone brilliant speed of horizontal P1 greater than longitudinal P 2 greater than the horizontal of heap of stone brilliant rate conversion of P1 in the of heap of stone brilliant thickness of first type semiconductor layer 122, meaning promptly; Continue in one second time after the aforementioned very first time; Laterally the of heap of stone brilliant speed of P1 can be greater than the of heap of stone brilliant speed of longitudinal P 2, thus, just can form the form shown in Fig. 3 D.So far first type semiconductor layer 122 just can match with each arc convex portion 114 and define aforesaid annular gap 130, and each annular gap 130 is around each arc convex portion 114.
Then, form aforementioned light emission layer 124 and aforementioned second type semiconductor layer 126 in regular turn on first type semiconductor layer 122, and can constitute aforesaid crystal of heap of stone 120, shown in Fig. 3 E.In the present embodiment, the material of first type semiconductor layer 122, luminescent layer 124 and second type semiconductor layer 126 can just repeat no more at this with reference to above-mentioned description.
In addition; Because the light emitting element structure 100 of present embodiment is as illustrating with the horizontal light emitting element structure; Therefore just can carry out lithography and handle, expose part first type semiconductor layer 122 to remove the part luminescent layer 124 and second type semiconductor layer 126, like Fig. 3 F.Afterwards, form aforementioned first electrode and aforesaid second electrode respectively on first type semiconductor layer and second type semiconductor layer, just can accomplish a kind of manufacture method of the light emitting element structure 100 shown in Figure 1A.
In sum, light emitting element structure of the present invention and preparation method thereof has advantage at least.At first; Be formed on the patterned substrate by building crystal; Wherein patterned substrate has several and is spaced and the arc convex portion of convex surfaces; Therefore just can make crystal entity of heap of stone connect the regional area of these arc convex portions by brilliant speed laterally of heap of stone in the control brilliant process of heap of stone and brilliant speed vertically of heap of stone, entity connect and keeps the part in space then to form the annular gap around arc convex portion.So,, just be easy to be reflected by the annular gap, and can improve the light extraction efficiency of light emitting element structure when light emitting element structure is produced the light time by driving in inside.
In addition because the surface that contact with crystal of heap of stone, annular gap also is a curved surface, so the light that is reflected by the annular gap also outgoing more easily outside light emitting element structure, the reason that this also can obtain to promote for the light extraction efficiency of light emitting element structure.
The above; Be merely preferred embodiment of the present invention; Can not limit the scope that the present invention implements with this, promptly all simple equivalent of doing according to claim of the present invention and invention description change and modify, and all still belong in the scope that patent of the present invention contains.
Claims (14)
1. light emitting element structure comprises:
Substrate; Have that the surface is spaced with several and arc convex portion that convexity should the surface; And those arc convex portions have arc-shaped curved surface respectively; Wherein those arc-shaped curved surfaces are connected with this surface, and each those arc-shaped curved surface with respect to this surperficial slope absolute value along with increasing progressively on the direction near this substrate; And
Crystal of heap of stone is disposed on this surface and those arc convex portions of this substrate, and should crystal of heap of stone matches with those arc convex portions and define several annular gaps, wherein respectively those annular gaps around each those arc convex portion.
2. light emitting element structure according to claim 1 wherein should crystal entity of heap of stone connects the regional area of those arc convex portions, and should crystal of heap of stone with each those arc convex portion not entity be connected and keep those annular gaps of part formation in space.
3. light emitting element structure according to claim 1, wherein each those annular gap ratio of occupying the surface area of these each those arc-shaped curved surfaces drops between 20% to 80%.
4. light emitting element structure according to claim 1, the distance at the top of wherein wantonly two adjacent those arc convex portions drops between 1.5 μ m to the 6 μ m.
5. light emitting element structure according to claim 1, wherein the ratio of width of each those arc convex portion and height drops between 75% to 200%.
6. light emitting element structure according to claim 1, wherein the height of each those arc convex portion drops between 1.4 μ m to the 1.6 μ m.
7. light emitting element structure according to claim 1, wherein this substrate comprises sapphire (sapphire) substrate, carborundum (SiC) substrate or silicon (Si) substrate.
8. light emitting element structure according to claim 1, the material that wherein should build crystal comprises the semiconducting compound of III family and V group element.
9. the manufacture method of a light emitting element structure comprises:
Substrate is provided; The arc convex portion that wherein this substrate has that the surface is spaced with several and convexity should the surface; Those arc convex portions have the arc-shaped curved surface that is connected with this surface respectively, and each those arc-shaped curved surface with respect to this surperficial slope absolute value along with increasing progressively on the direction near this substrate; And
Form crystal of heap of stone on this surface and those arc convex portions of this substrate, wherein should crystal of heap of stone match with those arc convex portions and define several annular gaps, and respectively those annular gaps around each those arc convex portion.
10. the manufacture method of light emitting element structure according to claim 9 wherein forms this crystal of heap of stone and comprises in the method for this substrate:
Form first type semiconductor layer on this substrate;
Form luminescent layer on this first type semiconductor layer; And
Form second type semiconductor layer on this luminescent layer.
11. the manufacture method of light emitting element structure according to claim 10 wherein forms this first type semiconductor layer and comprises in the method for this substrate:
In the very first time and in second time that this first type semiconductor layer is of heap of stone brilliant on this substrate in regular turn; So that this first type semiconductor layer matches with those arc convex portions and defines those annular gaps; Wherein in this very first time; Brilliant speed of heap of stone longitudinally is greater than horizontal of heap of stone brilliant speed, and in this second time, horizontal of heap of stone brilliant speed is greater than building brilliant speed longitudinally.
12. the manufacture method of light emitting element structure according to claim 9, wherein each those annular gap ratio of occupying the surface area of these each those arc-shaped curved surfaces drops between 20% to 80%.
13. the manufacture method of light emitting element structure according to claim 9, the distance at the top of wherein wantonly two adjacent those arc convex portions drops between 1.5 μ m to the 6 μ m.
14. the manufacture method of light emitting element structure according to claim 9, wherein the ratio of width of each those arc convex portion and height drops between 75% to 200%.
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| CN104103707A (en) * | 2013-04-11 | 2014-10-15 | 德晶科技股份有限公司 | Luminous solar battery component |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101558502A (en) * | 2006-12-22 | 2009-10-14 | 昭和电工株式会社 | Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp |
| US20100102351A1 (en) * | 2007-06-27 | 2010-04-29 | Epivalley Co., Ltd. | Semiconductor Light Emitting Device and Method of Manufacturing the Same |
| CN101826582A (en) * | 2009-03-02 | 2010-09-08 | Lg伊诺特有限公司 | Semiconductor light emitting device |
-
2011
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101558502A (en) * | 2006-12-22 | 2009-10-14 | 昭和电工株式会社 | Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp |
| US20100102351A1 (en) * | 2007-06-27 | 2010-04-29 | Epivalley Co., Ltd. | Semiconductor Light Emitting Device and Method of Manufacturing the Same |
| CN101826582A (en) * | 2009-03-02 | 2010-09-08 | Lg伊诺特有限公司 | Semiconductor light emitting device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103707A (en) * | 2013-04-11 | 2014-10-15 | 德晶科技股份有限公司 | Luminous solar battery component |
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