CN102760680B - Chuck assembly applicable to semiconductor substrate processing device - Google Patents
Chuck assembly applicable to semiconductor substrate processing device Download PDFInfo
- Publication number
- CN102760680B CN102760680B CN201210072829.3A CN201210072829A CN102760680B CN 102760680 B CN102760680 B CN 102760680B CN 201210072829 A CN201210072829 A CN 201210072829A CN 102760680 B CN102760680 B CN 102760680B
- Authority
- CN
- China
- Prior art keywords
- chuck
- coldplate
- chuck assembly
- lifting device
- piston
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Disclosed is a chuck assembly applicable to a semiconductor substrate processing device. The chuck assembly comprises a cooling plate which can be lifted, thereby making it possible to control the temperature of the chuck. The chuck assembly comprises the cooling plate arranged at the lower portion of the chuck and a cooling-plate lifting apparatus used for lifting the cooling plate.
Description
Technical field
The present invention relates generally to the chuck assembly for semiconductor chip treatment facility, and more particularly, relate to a kind of comprise can promote coldplate, make the temperature controlling chuck become the possible chuck assembly for semiconductor chip treatment facility thus.
Background technology
The process manufacturing semiconductor comprises the process of deposition or etching semiconductor substrate, in this process, this semiconductor chip forms required hierarchy or pattern.The example of method substrate being formed film or carrys out treatment substrate with predetermined pattern is the method wherein using plasma.PECVD (plasma enhanced chemical vapor deposition) process and plasma etch process are the typical cases of the method wherein using plasma treat substrates.
According to the method producing plasma, apparatus for processing plasma is divided into CCP (capacitance coupling plasma) type and ICP (inductively coupled plasma) type.When CCP type apparatus for processing plasma, upper electrode is arranged in the upper part of reative cell.Lower electrode is arranged on the below of chuck, and substrate or substrate tray are placed on this chuck.On the other hand, when ICP type apparatus for processing plasma, the upper part that inductance coil is arranged in the upper part of reative cell or around this reative cell is arranged.Lower electrode is arranged on the below of chuck.In CCP or ICP type apparatus for processing plasma, RF or DC power supply be supplied in upper electrode and lower electrode or be supplied in inductance coil and lower electrode, thus producing plasma in the reaction chamber.
The apparatus for processing plasma comprising reative cell as above comprises transfer chamber or feed space (loadlock chamber) further, and the substrate tray being mounted with single substrate or multiple substrate is delivered in reative cell by this transfer chamber or feed space.When comprising the clustered apparatus for processing plasma of multiple reative cell, be provided with feed space and transfer chamber.Substrate or substrate tray carry out vacuum treatment and are sent in reative cell via transfer chamber in feed space.When comprising the apparatus for processing plasma of single reative cell, there is not transfer chamber.Substrate or substrate tray are directly sent to reative cell from feed space.
Substrate or substrate tray are placed on setting chuck in the reaction chamber.Chuck is arranged on the upper end of chuck assembly.Typically, this chuck has the heating element utilizing electricity to produce heat wherein.
But, in the conventional technology, in order to process semiconductor chip, both needing the semiconductor chip treatment facility for high temperature, having needed again the semiconductor chip treatment facility for low temperature, and performed high-temperature process and K cryogenic treatment respectively.Therefore, need the reative cell separated to perform high-temperature process and K cryogenic treatment, or user must replace for the chuck of low temperature the chuck being used for high temperature when needed.This increase in demand processing time and need extra device or chuck, thereby increase cost.
Summary of the invention
Therefore, the present invention keeps it in mind and is present in the problems referred to above of the prior art and makes, and the object of this invention is to provide a kind of chuck assembly for semiconductor chip treatment facility, this chuck assembly comprises the coldplate that can promote, this coldplate can control the temperature of chuck, thus makes it possible to not only perform high-temperature process but also perform K cryogenic treatment in single reative cell.
To achieve these goals, the invention provides a kind of chuck assembly with chuck, it comprises: the coldplate being arranged on the below of chuck; With the coldplate lifting device promoting this coldplate.
When needs cooling chuck, coldplate lifting device can make coldplate be moved upward to and allow to carry out the position of conducting heat between chuck and coldplate.In this case, this coldplate lifting device can make coldplate move up until this coldplate contacts with chuck.
This coldplate lifting device can comprise the driving shaft of the lower surface being connected in coldplate, and operates the driver element of driving shaft up or down.
This driver element can comprise the piston being connected in driving shaft; By the pneumatic linear actuator that this piston is accommodated therein, wherein, Pneumatic pressure is put on the side of piston; With the support spring going up supporting piston in the side by Pneumatic pressure mobile piston in the opposite direction.
Preferably, driving shaft can be provided with the coupling block be made up of insulating material, and this coupling block is connected in coldplate.Coldplate lifting device can comprise at least two coldplate lifting devices.Coldplate lifting device can be arranged in the lower surface of coldplate below, be in circumferential direction the position that angle is at regular intervals spaced apart from each other.
In addition, the first heat transfer gas passages can be formed with in chuck, and the second heat transfer gas passages can be formed with in coldplate, thus for the gas being applied to heat transfer above chuck, improve chuck thus and be loaded into the heat transfer efficiency between the substrate on this chuck.
Accompanying drawing explanation
The following detailed description of carrying out in conjunction with the drawings, will more be expressly understood above and other objects of the present invention, feature and advantage, in the accompanying drawings:
Fig. 1 shows the view of the structure of semiconductor chip treatment facility according to the embodiment of the present invention;
Fig. 2 is the sectional view of chuck assembly according to the embodiment of the present invention;
Fig. 3 shows according to the sectional view comprising the coldplate lifting device of pneumatic drive unit in chuck assembly of the present invention; And
Fig. 4 is the sectional view of the chuck assembly according to another embodiment of the present invention.
Embodiment
Hereinafter, embodiments of the present invention are described in detail with reference to accompanying drawing.
Fig. 1 shows the view with the structure of the semiconductor chip treatment facility 1 of chuck assembly 10 according to the embodiment of the present invention.
The chuck assembly 10 that semiconductor chip treatment facility 1 comprises reative cell 3 and is arranged in this reative cell 3.When the semiconductor chip treatment facility 1 of Fig. 1, inductance coil 5 be depicted as be arranged on reative cell 3 upper end on so that can by ICP type method produce plasma.But in the present invention, semiconductor chip treatment facility 1 is not limited to ICP type apparatus for processing plasma, and such as it can comprise CCP type apparatus for processing plasma.When CCP type apparatus for processing plasma, reative cell 3 does not have inductance coil 5, and is provided with upper electrode on the upper end of reative cell 3, to produce plasma by CCP method.In addition, the semiconductor chip treatment facility of other type of plasma is not utilized must to be regarded as falling within the scope of the present invention, as long as they do not depart from scope and spirit of the present invention yet.
When the semiconductor chip treatment facility 1 of Fig. 1, chuck assembly 10 is depicted as and is supported in the mode the same with the mode of cantilever type chuck.In detail, chuck assembly 10 is supported in the disc-supported mode of cantilever type card by modular erecting device 7, thus can move the opening in the sidewall by being formed in reative cell 3.The advantage of cantilever type chuck bearing method is, the flowing of the process gas in reative cell 3 can keep even substantially.But, in embodiments of the present invention, support this chuck assembly 10 can not only carry out imbody by cantilever type chuck bearing method and imbody can be carried out by rod-type chuck bearing method, in this rod-type chuck bearing method, the supporting members support that chuck assembly 10 is extended by the bottom from reative cell 3.
Substrate or substrate assembly (W, hereinafter called " substrate ") are loaded on chuck assembly 10.
Fig. 2 is the sectional view of chuck assembly 10 according to the embodiment of the present invention.
Chuck assembly 10 according to the embodiment of the present invention comprises the chuck 14 it being mounted with substrate, the below being arranged on chuck 14 so that can by the coldplate 18 that promotes and the coldplate lifting device 24 promoting coldplate 18.
Chuck 14 is supported by main body 12.Heating element 16 is provided with in this chuck 14.Heating element 16 has resistance, and make once supply electric power, heating element 16 just produces heat, heats this chuck 14 thus.
Coldplate 18 has cooling fluid flowing pipe 20 wherein, and cooling fluid flows along this cooling fluid flowing pipe 20, provides refrigerating function thus.The thermal capacity of cooling fluid is relatively large is preferred.Water can typically be used as this cooling fluid.As selection, the gas of oil or such as air and so on can be used.
Coldplate lifting device 24 makes coldplate 18 move up or down.This coldplate lifting device 24 can comprise the middle body the single coldplate lifting device 24 promoting coldplate 18 that support coldplate 18.In the execution mode of Fig. 2, coldplate lifting device 24 comprises at least two coldplate lifting devices 24.In this case, coldplate lifting device 24 can be configured so that the periphery of the lower surface of their supporting coldplates 18.When coldplate lifting device 24 comprises multiple coldplate lifting device 24, coldplate lifting device 24 is arranged in the below of the lower surface of coldplate 18, is in circumferential direction the position that angle is at regular intervals spaced apart from each other.
In one embodiment, each coldplate lifting device 24 can be supported by lifting device support plate 22.In fig. 2, each lifting device support plate 22 be depicted as be arranged on main body 12 and chuck 14 contact surface between.In this case, lifting device support plate 22 can be made up of insulating material, thus chuck 14 and main body 12 are electrically insulated from each other.
Coldplate lifting device 24 comprises the driving shaft 26 being connected in coldplate 18 and the driver element 30 operating this driving shaft 26 up or down.Driving shaft 26 is connected in the lower surface of coldplate 18.In one embodiment, the upper end that coupling block 28 can be arranged on driving shaft 26 is connected in the lower surface of coldplate 18.In this case, coupling block 28 by insulating material make to make it can with coldplate 18 electric insulation.
Driver element 30 can comprise linear motor.As selection, driver element 30 can comprise the assembly of electro-motor and rack-and-pinion unit, thus driving shaft can be made to move up or down.As another replacement scheme, driver element 30 can comprise pneumatic operation structure to make the minimised of high-temperature situation.
Fig. 3 shows according to the sectional view comprising the coldplate lifting device 24 of pneumatic drive unit 30 in chuck assembly of the present invention.
Pneumatic drive unit 30 shown in Fig. 3 comprises pneumatic linear actuator 32 and piston 34, and wherein, Pneumatic pressure is fed in pneumatic linear actuator 32, and by the Pneumatic pressure be fed in pneumatic linear actuator 32, piston is moved up.Preferably, the surrounding of the circumferential exterior surface of piston 34 is provided with the containment member 36 of such as O shape ring and so on.Piston 34 is connected in driving shaft 26.Pneumatic drive unit 30 comprises support spring 38 further, and this support spring 38 is arranged in pneumatic linear actuator 32 and also goes up supporting piston 34 when supplied pneumatic pressure in the opposite direction in the side with piston 34 movement.
When being fed in pneumatic linear actuator 32 by Pneumatic pressure, thus when making the power larger than the elastic force being put on piston 34 by support spring 38 be applied to piston 34, piston 34 moves up, and makes the coldplate 18 being connected to driving shaft 26 move up thus.The distance regulating the Pneumatic pressure be fed in pneumatic linear actuator 32 that control piston 34 is moved up becomes possibility.When being removed from pneumatic linear actuator 32 by Pneumatic pressure, piston 34 moves down and coldplate 18 also moves down.
Shown in Fig. 3 is only with a kind of execution mode of the driver element 30 of pneumatic mode operation.As required, it is each that pneumatic linear actuator can be configured so that Pneumatic pressure to be applied in the opposite side portion of piston 34, thus the vertical movement by regulating the Pneumatic pressure putting on the first sidepiece of piston 34 and the Pneumatic pressure putting on the second sidepiece to carry out control piston 34.
There is two or more coldplate lifting device 24, when each coldplate lifting device 24 comprises pneumatic drive unit 30, Pneumatic pressure Supply Structure can be configured so that Pneumatic pressure pipeline is connected to the corresponding pneumatic linear actuator 32 of driver element 30.As selection, Pneumatic pressure Supply Structure can be configured so that multiple pipelines that single Pneumatic pressure line branches becomes identical with the quantity of the pneumatic linear actuator 32 existed, and take-off line is connected to the pneumatic linear actuator 32 of respective drive unit 30.
Advantage according to chuck assembly 10 of the present invention is, it can either be used in the heating process of semiconductor chip process operation, can be used in again in its cooling procedure.In semiconductor chip process operation, at needs in order in the heating process of heated substrate, heating element 16 produces heat and the heated chuck 14 when coldplate 18 is positioned at lower position place thus.As required, can the cooling down operation of controlled cooling model plate 18.If when coldplate 18 is positioned at lower position place, cooling fluid is supplied to coldplate 18, then can prevent the parts in the cause thermal damage chuck assembly 10 produced by heating element 16.
In semiconductor chip process operation, at needs in order to cool in the cooling procedure of substrate, coldplate 18 is moved up, make the heat transfer performed between coldplate 18 and the lower surface of chuck 14 become possibility thus.In one embodiment, the raised position of coldplate 18 can be set to and coldplate 18 is contacted with the lower surface of chuck 14.The process cooling this substrate comprises this chuck 14 of cooling.The cooling of chuck 14 comprises and cooling fluid is supplied to coldplate 18 and coldplate 18 is positioned the position that can carry out between coldplate 18 and chuck 14 conducting heat.
Fig. 4 is the sectional view of the chuck assembly 10 according to another embodiment of the present invention.
Based on the structure of the chuck assembly 10 of Fig. 2, comprise focusing ring 40 and fixture 42 further according to the chuck assembly 10 of present embodiment of the present invention, and be configured so that the gas supplying the such as helium and so on being applied to heat transfer in the below of substrate W.
Focusing ring 40 is arranged to the circumferential exterior surface around chuck 14.Focusing ring 40 prevents the plasma damage chuck 14 for the treatment of substrate W and plasma is concentrated on substrate W.
Fixture 42 extruding is placed on the periphery of the substrate W on chuck 14, thus makes the upper surface close contact of substrate W and chuck 14.When being loaded on chuck 14 by substrate W, fixture 42 moves up away from chuck 14.After being loaded on chuck 14 by substrate W, fixture 42 moves down and extrudes the periphery of substrate W.
First heat transfer gas passages 44 is vertically formed through chuck 14, thus the heat-conducting gas of such as helium (He) and so on is supplied to above it from the below of chuck 14 through the first heat transfer gas passages 44.Containment member resettlement groove 46 is formed in the periphery of the upper surface of chuck 14.Chuck sealed component 48 is arranged in sealing member seating groove 46.Chuck sealed component 48 can comprise O shape ring or lippacking.When processing the substrate W be placed on chuck 14, chuck sealed component 48 leaks in reative cell in order to prevent heat-conducting gas.The while of making the amount of the heat-conducting gas leaked in reative cell minimized at chuck sealed component 48, the heat-conducting gas supplied through the first heat transfer gas passages 44 is filled in the space between chuck 14 and substrate W.
Chuck 14 is in the diagram when can promote downwards substrate W and maintain its electrostatic chuck, and chuck assembly 10 can not comprise fixture 42.
Second heat transfer gas passages 50 is formed through coldplate 18.Heat-conducting gas supply pipe 52 to be arranged in the second heat transfer gas passages 50 and to be connected to the first heat transfer gas passages 44 be formed in chuck 14.Heat-conducting gas is fed in heat-conducting gas supply pipe 52.Heat-conducting gas can be fed in heat-conducting gas supply pipe 52 by independent device (not shown).In the diagram, object for convenience, has dispensed the structure be fed to by heat-conducting gas in heat-conducting gas supply pipe 52.
As mentioned above, in the present invention, single chuck assembly can either perform the heating process of operation of process semiconductor chip, can perform its cooling procedure again, and without the need to being the reative cell of each independent setting in heating process and cooling procedure or independent chuck assembly.
Therefore, the present invention can the size of reduction means, installation cost and the time needed for treatment substrate.
Although for illustrational object, disclose the preferred embodiment of the present invention, but one of ordinary skill in the art will understand, when do not depart from of the present invention as scope of disclosure and spirit in the following claims, multiple improvement, interpolation and replacement are all possible.Therefore, execution mode disclosed in this specification and accompanying drawing are only for explaining the present invention, and its technical spirit unrestricted.In other words, scope of the present invention must not be subject to the restriction of execution mode or accompanying drawing.Scope of the present invention must be limited by claims, and therefore, the equivalent scope of this scope to be defined as comprise by claim.
Claims (6)
1. a chuck assembly, described chuck assembly has the main body of chuck and the described chuck of supporting, and in described chuck, be provided with heating element, described chuck assembly comprises:
Coldplate, described coldplate is arranged on the below of described chuck; With
Coldplate lifting device, described coldplate lifting device promotes described coldplate,
Wherein, described coldplate and described coldplate lifting device are comprised in the inner space of described chuck and described main body, and
Wherein, described coldplate lifting device comprises: driving shaft, and described driving shaft is connected in the lower surface of described coldplate; And driver element, described driver element operates described driving shaft up or down.
2. chuck assembly according to claim 1, wherein, when needs cool described chuck, described coldplate lifting device makes described coldplate be moved upward to and allows to carry out the position of conducting heat between described chuck and described coldplate.
3. chuck assembly according to claim 2, wherein, described coldplate is moved up described coldplate lifting device until described coldplate contacts with described chuck.
4. chuck assembly according to claim 1, wherein, described driver element comprises:
Piston, described piston is connected in described driving shaft;
By the pneumatic linear actuator that described piston is accommodated therein, wherein, Pneumatic pressure is put on the side of described piston; And
Support spring, described support spring with moved by described Pneumatic pressure described piston side in the opposite direction on support described piston.
5. chuck assembly according to claim 1, wherein, described driving shaft is provided with the coupling block be made up of insulating material, and described coupling block is connected in described coldplate.
6. the chuck assembly according to any one in claims 1 to 3, wherein, in described chuck, be formed with the first heat transfer gas passages, and be formed with the second heat transfer gas passages in described coldplate, thus for the gas being applied to heat transfer above described chuck.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2011-0038980 | 2011-04-26 | ||
| KR1020110038980A KR101324960B1 (en) | 2011-04-26 | 2011-04-26 | Chuck Assembly for Semiconductor Substrate Processing Device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102760680A CN102760680A (en) | 2012-10-31 |
| CN102760680B true CN102760680B (en) | 2015-05-27 |
Family
ID=47055082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210072829.3A Expired - Fee Related CN102760680B (en) | 2011-04-26 | 2012-03-19 | Chuck assembly applicable to semiconductor substrate processing device |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101324960B1 (en) |
| CN (1) | CN102760680B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916564B (en) * | 2014-03-13 | 2018-01-09 | 北京北方华创微电子装备有限公司 | Reaction chamber and plasma processing device |
| CN117637608B (en) * | 2024-01-25 | 2024-05-14 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing through silicon via |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5584971A (en) * | 1993-07-02 | 1996-12-17 | Tokyo Electron Limited | Treatment apparatus control method |
| US6353209B1 (en) * | 1999-03-04 | 2002-03-05 | Board Of Trustees Of The Leland Stanford Junior University | Temperature processing module |
| CN1547760A (en) * | 2002-06-05 | 2004-11-17 | ס�ѵ�����ҵ��ʽ���� | Heater module for semiconductor manufacturing device |
| CN1591774A (en) * | 1998-03-05 | 2005-03-09 | Fsi国际公司 | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100553256B1 (en) * | 2000-09-01 | 2006-02-20 | 주식회사 실트론 | Device for Heat Treatment of Semicondu ctor Wafer with Localized Focusing |
| US6783630B2 (en) * | 2002-08-27 | 2004-08-31 | Axcelis Technologies, Inc. | Segmented cold plate for rapid thermal processing (RTP) tool for conduction cooling |
| US8785821B2 (en) * | 2009-07-06 | 2014-07-22 | Sokudo Co., Ltd. | Substrate processing apparatus with heater element held by vacuum |
-
2011
- 2011-04-26 KR KR1020110038980A patent/KR101324960B1/en active IP Right Grant
-
2012
- 2012-03-19 CN CN201210072829.3A patent/CN102760680B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5584971A (en) * | 1993-07-02 | 1996-12-17 | Tokyo Electron Limited | Treatment apparatus control method |
| CN1591774A (en) * | 1998-03-05 | 2005-03-09 | Fsi国际公司 | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
| US6353209B1 (en) * | 1999-03-04 | 2002-03-05 | Board Of Trustees Of The Leland Stanford Junior University | Temperature processing module |
| CN1547760A (en) * | 2002-06-05 | 2004-11-17 | ס�ѵ�����ҵ��ʽ���� | Heater module for semiconductor manufacturing device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101324960B1 (en) | 2013-11-04 |
| CN102760680A (en) | 2012-10-31 |
| KR20120121164A (en) | 2012-11-05 |
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