CN102760680A - Chuck assembly applicable to semiconductor substrate processing device - Google Patents
Chuck assembly applicable to semiconductor substrate processing device Download PDFInfo
- Publication number
- CN102760680A CN102760680A CN2012100728293A CN201210072829A CN102760680A CN 102760680 A CN102760680 A CN 102760680A CN 2012100728293 A CN2012100728293 A CN 2012100728293A CN 201210072829 A CN201210072829 A CN 201210072829A CN 102760680 A CN102760680 A CN 102760680A
- Authority
- CN
- China
- Prior art keywords
- coldplate
- chuck
- chuck assembly
- piston
- lifting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Disclosed is a chuck assembly applicable to a semiconductor substrate processing device. The chuck assembly comprises a cooling plate which can be lifted, thereby making it possible to control the temperature of the chuck. The chuck assembly comprises the cooling plate arranged at the lower portion of the chuck and a cooling-plate lifting apparatus used for lifting the cooling plate.
Description
Technical field
The present invention relates generally to the chuck assembly that is used for the semiconductor chip treatment facility, and more particularly, relates to and a kind ofly comprises the coldplate that can promote, makes the temperature of control chuck become the possible chuck assembly that is used for the semiconductor chip treatment facility thus.
Background technology
Make the process that semi-conductive process comprises deposition or etching semiconductor substrate, in this process, on this semiconductor chip, form required hierarchy or pattern.On substrate, forming film or coming the example of the method for treatment substrate with predetermined pattern is wherein to use the method for plasma.PECVD (plasma enhanced chemical vapor deposition) process and plasma etching process are wherein to use the typical case of the method for Cement Composite Treated by Plasma substrate.
According to the method that produces plasma, apparatus for processing plasma is divided into CCP (capacitance coupling plasma) type and ICP (inductively coupled plasma) type.Under the situation of CCP type apparatus for processing plasma, upper electrode is arranged in the top part of reative cell.Lower electrode is arranged on the below of chuck, and substrate or substrate pallet are placed on this chuck.On the other hand, under the situation of ICP type apparatus for processing plasma, inductance coil is arranged in the top part of reative cell or around the top part setting of this reative cell.Lower electrode is arranged on the below of chuck.In CCP or ICP type apparatus for processing plasma, RF or DC power supply are supplied in upper electrode and lower electrode or are supplied in inductance coil and lower electrode, thereby in reative cell, produce plasma.
The apparatus for processing plasma that comprises aforesaid reative cell further comprises transfer chamber or feed space (loadlock chamber), and the substrate pallet that this transfer chamber or feed space will be mounted with single substrate or a plurality of substrates is delivered in the reative cell.Under the situation of the clustered apparatus for processing plasma that comprises a plurality of reative cells, be provided with feed space and transfer chamber.Substrate or substrate pallet carry out vacuum treatment and are sent in the reative cell via the transfer chamber in feed space.Under the situation of the apparatus for processing plasma that comprises single reative cell, there is not the transfer chamber.Substrate or substrate pallet directly are sent to the reative cell from feed space.
Substrate or substrate pallet are placed on the chuck that is arranged in the reative cell.Chuck is arranged on the upper end of chuck assembly.Typically, this chuck has the heating element that utilizes electricity generation heat therein.
Yet, in conventional art,, both need be used for the semiconductor chip treatment facility of high temperature in order to handle semiconductor chip, the semiconductor chip treatment facility of low temperature be need be used for again, and high-temperature process and K cryogenic treatment carried out respectively.Therefore, the reative cell that need separate is carried out high-temperature process and K cryogenic treatment, or the user must replace the chuck that is used for high temperature with the chuck that is used for low temperature when needed.This increase in demand processing time and need extra device or chuck, increased cost thus.
Summary of the invention
Therefore; The present invention keeps it in mind and is present in the problems referred to above of the prior art and makes; And the purpose of this invention is to provide a kind of chuck assembly that is used for the semiconductor chip treatment facility; Comprise the coldplate that can promote in this chuck assembly, this coldplate can be controlled the temperature of chuck, thereby makes it possible in single reative cell, not only carry out high-temperature process but also carry out K cryogenic treatment.
To achieve these goals, the invention provides a kind of chuck assembly with chuck, it comprises: the coldplate that is arranged on the below of chuck; With the coldplate lifting device that promotes this coldplate.
When needs cooling chuck, the coldplate lifting device can make coldplate be moved upward to the position that permission is conducted heat between chuck and coldplate.In this case, this coldplate lifting device can make coldplate move up to contact with chuck up to this coldplate.
This coldplate lifting device can comprise the driving shaft of the lower surface that is connected in coldplate and operate the driver element of driving shaft up or down.
This driver element can comprise the piston that is connected in driving shaft; This piston is contained in pneumatic linear actuator wherein, wherein, Pneumatic pressure is put on a side of piston; With support spring at the direction upper support piston in the opposite direction that passes through the Pneumatic pressure mobile piston.
Preferably, driving shaft can be provided with the coupling block of being processed by insulating material, and this coupling block is connected in coldplate.The coldplate lifting device can comprise at least two coldplate lifting devices.The coldplate lifting device can be arranged in the lower surface of coldplate the below, be on the circumferential direction position that angle at regular intervals is spaced apart from each other.
In addition; In chuck, can be formed with the first heat-conducting gas passage; And in coldplate, can be formed with the second heat-conducting gas passage, thereby the gas that supply is used to conduct heat above chuck improves chuck thus and is loaded into the heat transfer efficiency between the substrate on this chuck.
Description of drawings
The following detailed description of carrying out in conjunction with the drawings will more be expressly understood above and other objects of the present invention, feature and advantage, in the accompanying drawings:
Fig. 1 shows the view of the structure of semiconductor chip treatment facility according to the embodiment of the present invention;
Fig. 2 is the sectional view of chuck assembly according to the embodiment of the present invention;
Fig. 3 shows the sectional view according to the coldplate lifting device that comprises pneumatic drive unit in the chuck assembly of the present invention; And
Fig. 4 is the sectional view according to the chuck assembly of another embodiment of the present invention.
Embodiment
Hereinafter, will describe execution mode of the present invention in detail with reference to accompanying drawing.
Fig. 1 shows the view of the structure of the semiconductor chip treatment facility 1 with chuck assembly 10 according to the embodiment of the present invention.
Semiconductor chip treatment facility 1 comprises reative cell 3 and is arranged on the chuck assembly 10 in this reative cell 3.Under the situation of the semiconductor chip treatment facility 1 of Fig. 1, inductance coil 5 is depicted as on the upper end that is arranged on reative cell 3, so that can produce plasma through ICP type method.Yet in the present invention, semiconductor chip treatment facility 1 is not limited to ICP type apparatus for processing plasma, and for example it can comprise CCP type apparatus for processing plasma.Under the situation of CCP type apparatus for processing plasma, reative cell 3 does not have inductance coil 5, and the upper end of reative cell 3 is provided with upper electrode, so that produce plasma through the CCP method.In addition, do not utilize the semiconductor chip treatment facility of other type of plasma must be regarded as yet and fall in the scope of the present invention, as long as they do not depart from scope of the present invention and spirit.
Under the situation of the semiconductor chip treatment facility 1 of Fig. 1, chuck assembly 10 is depicted as with the mode the same with the mode of cantilever type chuck and is supported.Say that at length chuck assembly 10 is supported by the mode of modular erecting device 7 with the supporting of cantilever type chuck, thereby can move through the opening in the sidewall that is formed on reative cell 3.The advantage of cantilever type chuck bearing method is that it is even that the processing gas flow in the reative cell 3 can keep basically.Yet; In embodiments of the present invention; Supporting this chuck assembly 10 not only can come imbody and can come imbody through rod-type chuck bearing method through cantilever type chuck bearing method; In this rod-type chuck bearing method, chuck assembly 10 is by the supporting members support of extending from the bottom of reative cell 3.
Substrate or substrate assembly (W hereinafter is referred to as " substrate ") are loaded on the chuck assembly 10.
Fig. 2 is the sectional view of chuck assembly 10 according to the embodiment of the present invention.
The below that chuck assembly 10 according to the embodiment of the present invention comprises the chuck 14 that is mounted with substrate on it, be arranged on chuck 14 is so that coldplate 18 that can be raised and the coldplate lifting device 24 that promotes coldplate 18.
Chuck 14 is by main body 12 supportings.Be provided with heating element 16 in this chuck 14.In a single day heating element 16 has resistance, makes to supply electric power, heating element 16 just produces heat, heats this chuck 14 thus.
Coldplate 18 has the mobile pipe 20 of cooling fluid therein, and cooling fluid flows along the mobile pipe 20 of this cooling fluid, and refrigerating function is provided thus.The thermal capacity of cooling fluid is relatively large to be preferred.Water can typically be used as this cooling fluid.As selection, can use oil or the gas such as air.
In one embodiment, each coldplate lifting device 24 can be by 22 supportings of lifting device support plate.In Fig. 2, each lifting device support plate 22 is depicted as between the contact surface that is installed in main body 12 and chuck 14.In this case, lifting device support plate 22 can be processed by insulating material, thereby makes chuck 14 and main body 12 be electrically insulated from each other.
Fig. 3 shows the sectional view according to the coldplate lifting device 24 that comprises pneumatic drive unit 30 in the chuck assembly of the present invention.
When Pneumatic pressure is fed in the pneumatic linear actuator 32, thereby make that piston 34 moves up in the time of will being applied to piston 34 than the big power of elastic force that is put on piston 34 by support spring 38, make the coldplate 18 that is connected in driving shaft 26 move up thus.Adjusting is fed to the distance that the Pneumatic pressure in the pneumatic linear actuator 32 makes control piston 34 move up becomes possibility.When Pneumatic pressure was removed from pneumatic linear actuator 32, piston 34 moved down and coldplate 18 also moves down.
Shown in Fig. 3 only is a kind of execution mode with the driver element 30 of pneumatic mode operation.As required; Pneumatic linear actuator can be configured such that Pneumatic pressure is applied to each in the relative sidepiece of piston 34, thereby the Pneumatic pressure that puts on first sidepiece of piston 34 through adjusting comes the vertical of control piston 34 to move with the Pneumatic pressure that puts on second sidepiece.
Have two or more coldplate lifting devices 24, each coldplate lifting device 24 comprises all under the situation of pneumatic drive unit 30 that the Pneumatic pressure Supply Structure can be configured such that the Pneumatic pressure pipeline is connected to the corresponding pneumatic linear actuator 32 of driver element 30.As selection, the Pneumatic pressure Supply Structure can be configured such that single Pneumatic pressure line branches becomes the identical a plurality of pipelines of quantity with the pneumatic linear actuator 32 of existence, and take-off line is connected in the pneumatic linear actuator 32 of respective drive unit 30.
Advantage according to chuck assembly 10 of the present invention is that it can either be used in semiconductor chip and handle in the heating process of operation, can be used in its cooling procedure again.Handle in the operation at semiconductor chip, in need the heating process in order to heated substrate, heating element 16 produces heat and heated chuck 14 when coldplate 18 is positioned at the lower position place thus.As required, the cooling down operation of may command coldplate 18.If when coldplate 18 is positioned at the lower position place, cooling fluid is supplied to coldplate 18, the parts in the cause thermal damage chuck assembly 10 that then can prevent to produce by heating element 16.
Handle in the operation at semiconductor chip, in need cooling procedure, make coldplate 18 move up, make the heat transfer between the lower surface of carrying out coldplate 18 and chuck 14 become possibility thus in order to the cooling substrate.In one embodiment, the raised position of coldplate 18 can be set for and make coldplate 18 contact with the lower surface of chuck 14.The process of cooling off this substrate comprises this chuck 14 of cooling.The cooling of chuck 14 comprises the position that cooling fluid is supplied to coldplate 18 and coldplate 18 is positioned can conduct heat between coldplate 18 and the chuck 14.
Fig. 4 is the sectional view according to the chuck assembly 10 of another embodiment of the present invention.
Based on the structure of the chuck assembly 10 of Fig. 2, further comprise focusing ring 40 and anchor clamps 42 according to the chuck assembly 10 of of the present invention execution mode, and be configured such that the gas such as helium that supply is used to conduct heat below substrate W.
Focusing ring 40 is arranged to the circumferential exterior surface around chuck 14.Focusing ring 40 prevents to be used for the plasma damage chuck 14 of treatment substrate W and makes plasma concentrate on substrate W.
The first heat-conducting gas passage 44 vertically forms through chucks 14, thereby above making that heat-conducting gas such as helium (He) is supplied to it through the first heat-conducting gas passage 44 from the below of chuck 14.Containment member resettlement groove 46 is formed in the periphery of upper surface of chuck 14.Chuck containment member 48 is arranged in the sealing member resettlement groove 46.Chuck containment member 48 can comprise O shape ring or lippacking.When processing had been placed on the substrate W on the chuck 14, chuck containment member 48 leaked in the reative cell in order to prevent heat-conducting gas.Make the minimized while of amount that leaks into the heat-conducting gas in the reative cell at chuck containment member 48, will be filled in the space between chuck 14 and the substrate W through the heat-conducting gas of the first heat-conducting gas passage, 44 supplies.
At the chuck shown in Fig. 4 14 is can promote substrate W downwards and maintain under its situation of electrostatic chuck, on chuck assembly 10, can not comprise anchor clamps 42.
The second heat-conducting gas passage 50 forms through coldplate 18.Heat-conducting gas supply pipe 52 is arranged in the second heat-conducting gas passage 50 and is connected in the first heat-conducting gas passage 44 that is formed in the chuck 14.Heat-conducting gas is fed in the heat-conducting gas supply pipe 52.Independent device (not shown) can be fed to heat-conducting gas in the heat-conducting gas supply pipe 52.In Fig. 4, purpose has for convenience dispensed heat-conducting gas has been fed to the structure in the heat-conducting gas supply pipe 52.
As stated; In the present invention; Single chuck assembly can either be carried out the heating process of the operation of handling semiconductor chip, can carry out its cooling procedure again, and need not to be each reative cell that is provided with separately in heating process and the cooling procedure or independent chuck assembly.
Therefore, but the required time of the size of the present invention's reduction means, installation cost and treatment substrate.
Although from illustrational purpose; Preferred implementation of the present invention is disclosed; But one of ordinary skill in the art will understand, and not depart under the situation like scope of disclosure in accompanying claims and spirit of the present invention, and multiple improvement, interpolation and replacement all are possible.Therefore, disclosed execution mode and accompanying drawing only are used to explain the present invention in this specification, and unrestricted its technical spirit.In other words, scope of the present invention must not receive the restriction of execution mode or accompanying drawing.Scope of the present invention must be limited accompanying claims, and therefore, the equivalent scope of this scope is defined as by claim and comprises.
Claims (7)
1. chuck assembly with chuck, said chuck assembly comprises:
Coldplate, said coldplate is arranged on the below of said chuck; With
The coldplate lifting device, said coldplate lifting device promotes said coldplate.
2. chuck assembly according to claim 1, wherein, when needs cooled off said chuck, said coldplate lifting device made said coldplate be moved upward to the position that permission is conducted heat between said chuck and said coldplate.
3. chuck assembly according to claim 2, wherein, said coldplate lifting device moves up said coldplate and contacts with said chuck up to said coldplate.
4. according to each the described chuck assembly in the claim 1 to 3, wherein, said coldplate lifting device comprises:
Driving shaft, said driving shaft is connected in the lower surface of said coldplate; And
Driver element, said driver element is operated said driving shaft up or down.
5. chuck assembly according to claim 4, wherein, said driver element comprises:
Piston, said piston is connected in said driving shaft;
Said piston is contained in pneumatic linear actuator wherein, wherein, Pneumatic pressure is put on a side of said piston; And
Support spring, said support spring with the said piston of direction upper support in the opposite direction that moves said piston through said Pneumatic pressure.
6. chuck assembly according to claim 4, wherein, said driving shaft is provided with the coupling block of being processed by insulating material, and said coupling block is connected in said coldplate.
7. according to each the described chuck assembly in the claim 1 to 3; Wherein, In said chuck, be formed with the first heat-conducting gas passage, and in said coldplate, be formed with the second heat-conducting gas passage, thus the gas that supply is used to conduct heat above said chuck.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110038980A KR101324960B1 (en) | 2011-04-26 | 2011-04-26 | Chuck Assembly for Semiconductor Substrate Processing Device |
| KR10-2011-0038980 | 2011-04-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102760680A true CN102760680A (en) | 2012-10-31 |
| CN102760680B CN102760680B (en) | 2015-05-27 |
Family
ID=47055082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210072829.3A Expired - Fee Related CN102760680B (en) | 2011-04-26 | 2012-03-19 | Chuck assembly applicable to semiconductor substrate processing device |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101324960B1 (en) |
| CN (1) | CN102760680B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637608B (en) * | 2024-01-25 | 2024-05-14 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing through silicon via |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916564B (en) * | 2014-03-13 | 2018-01-09 | 北京北方华创微电子装备有限公司 | Reaction chamber and plasma processing device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5584971A (en) * | 1993-07-02 | 1996-12-17 | Tokyo Electron Limited | Treatment apparatus control method |
| US6353209B1 (en) * | 1999-03-04 | 2002-03-05 | Board Of Trustees Of The Leland Stanford Junior University | Temperature processing module |
| CN1547760A (en) * | 2002-06-05 | 2004-11-17 | ס�ѵ�����ҵ��ʽ���� | Heater module for semiconductor manufacturing device |
| CN1591774A (en) * | 1998-03-05 | 2005-03-09 | Fsi国际公司 | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
| US20110000426A1 (en) * | 2009-07-06 | 2011-01-06 | Sokudo Co., Ltd. | Substrate processing apparatus with heater element held by vacuum |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100553256B1 (en) * | 2000-09-01 | 2006-02-20 | 주식회사 실트론 | Device for Heat Treatment of Semicondu ctor Wafer with Localized Focusing |
| US6783630B2 (en) * | 2002-08-27 | 2004-08-31 | Axcelis Technologies, Inc. | Segmented cold plate for rapid thermal processing (RTP) tool for conduction cooling |
-
2011
- 2011-04-26 KR KR1020110038980A patent/KR101324960B1/en active IP Right Grant
-
2012
- 2012-03-19 CN CN201210072829.3A patent/CN102760680B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5584971A (en) * | 1993-07-02 | 1996-12-17 | Tokyo Electron Limited | Treatment apparatus control method |
| CN1591774A (en) * | 1998-03-05 | 2005-03-09 | Fsi国际公司 | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
| US6353209B1 (en) * | 1999-03-04 | 2002-03-05 | Board Of Trustees Of The Leland Stanford Junior University | Temperature processing module |
| CN1547760A (en) * | 2002-06-05 | 2004-11-17 | ס�ѵ�����ҵ��ʽ���� | Heater module for semiconductor manufacturing device |
| US20110000426A1 (en) * | 2009-07-06 | 2011-01-06 | Sokudo Co., Ltd. | Substrate processing apparatus with heater element held by vacuum |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637608B (en) * | 2024-01-25 | 2024-05-14 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing through silicon via |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101324960B1 (en) | 2013-11-04 |
| CN102760680B (en) | 2015-05-27 |
| KR20120121164A (en) | 2012-11-05 |
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