CN102760634A - Semiconductor manufacture system - Google Patents
Semiconductor manufacture system Download PDFInfo
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- CN102760634A CN102760634A CN2012102619765A CN201210261976A CN102760634A CN 102760634 A CN102760634 A CN 102760634A CN 2012102619765 A CN2012102619765 A CN 2012102619765A CN 201210261976 A CN201210261976 A CN 201210261976A CN 102760634 A CN102760634 A CN 102760634A
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Abstract
The invention relates to a semiconductor manufacture system which comprises a liquid pipeline, a leakage liquid blocking device, a first processing device with a processing cavity, a second processing device connected with the first processing device and a third processing device arranged on the second processing device. The liquid pipeline is connected with a cavity cover of the first processing device provided with the processing cavity at the connection point. Further, the second processing device and the third processing device are arranged under the connection point of the first processing device provided with the processing cavity. The leakage liquid blocking device is arranged between the connection point and the third processing device. The leakage liquid blocking device is used for receiving liquid leaked from the liquid pipeline when liquid leakage happens at the connection point where the liquid pipeline is connected with the cavity cover of the first processing device provided with the processing cavity to prevent the liquid leaked from the liquid pipeline from being contacted with the second processing device and the third processing device.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of semi-conductor manufacturing system.
Background technology
In semiconductor fabrication, sometimes need pending wafer be placed in the process chamber and handle.Other processing unit that links to each other with this processing unit with process chamber sometimes can be placed in below with processing unit of process chamber.Processing unit with process chamber is imported treat liquid or is got rid of treat liquid to the outside through fluid pipeline sometimes from the outside.
In the technical process of reality, the fluid pipeline that links to each other with the cavity lid of the processing unit with process chamber leaks easily.At this moment; When if the fluid pipeline that links to each other with the cavity lid of the processing unit with process chamber flows out treat liquid owing to the generation leakage; The treatment fluid that then flows out is known from experience on other processing unit of the below that flows to the processing unit with process chamber, thereby damages these other processing unit.
Specifically, Fig. 1 schematically shows the block diagram according to this semi-conductor manufacturing system of prior art.
As shown in Figure 1; This semi-conductor manufacturing system according to prior art comprises: (for example have first processing unit 1 of process chamber, second processing unit 5 that is connected with first processing unit 1; Be used for the RF energy generating apparatus that the process chamber to processing unit 1 provides RF energy to come activated plasma) and be arranged in the 3rd processing unit 4 on second processing unit 5 (for example, being used to regulate the RF energy adjuster device of the RF energy that provides to the process chamber of processing unit 1 by the RF energy generating apparatus).
Wherein, second processing unit 5 and the 3rd processing unit 4 are arranged in first processing unit, 1 below with process chamber.
And fluid pipeline 2 links to each other with the cavity lid of the processing unit with process chamber at tie point 3.When flowing out treat liquid if the fluid pipeline 2 that links to each other with the cavity lid of first processing unit 1 with process chamber takes place at tie point 3 places to leak; The treatment fluid that then flows out is known from experience on other processing unit (second processing unit 5 and/or the 3rd processing unit 4) of the below that flows to first processing unit 1 with process chamber; Thereby damage these other processing unit, and possibly cause wafer loss owing to the water pipe that is connected with the lid of process chamber leaks.
Therefore, be desirable to provide a kind of semi-conductor manufacturing system that can prevent to leak other processing unit of the below of damaging processing unit with process chamber owing to the fluid pipeline generation that links to each other with processing unit with process chamber.
Summary of the invention
Technical problem to be solved by this invention is to have above-mentioned defective in the prior art, and a kind of semi-conductor manufacturing system that can prevent to leak owing to the fluid pipeline generation that links to each other with the processing unit with process chamber other processing unit of the below of damaging the processing unit with process chamber is provided.
According to the present invention; A kind of semi-conductor manufacturing system is provided, and it comprises: fluid pipeline, leakage retention device, first processing unit with process chamber, second processing unit that is connected with said first processing unit and be arranged in the 3rd processing unit on said second processing unit; Wherein, said fluid pipeline links to each other with the cavity lid of first processing unit with process chamber at tie point; And said second processing unit and said the 3rd processing unit are arranged in the below of the said tie point of first processing unit with process chamber; Said leakage retention device is between said tie point and said the 3rd processing unit; Wherein, Said leakage retention device is used for when fluid pipeline at the said tie point place that is connected with the said cavity lid of said first processing unit with process chamber leakage takes place, admitting the liquid that leaks out from said fluid pipeline, thereby prevents to contact said second processing unit and said the 3rd processing unit from the liquid that said fluid pipeline leaks out.
Preferably, above-mentioned semi-conductor manufacturing system also comprises: the liquid sensor of in said leakage retention device, arranging, said liquid sensor send a warning when in sensing said leakage retention device, receiving liquid.
Preferably, in above-mentioned semi-conductor manufacturing system, the said breath of notifying is passage of scintillation light information or buzzer information.
Preferably, in above-mentioned semi-conductor manufacturing system, said second processing unit is the RF energy generating apparatus that provides RF energy to come activated plasma in the process chamber to processing unit.Said the 3rd processing unit is the RF energy adjuster device that is used to regulate the RF energy that is provided to the process chamber of processing unit by the RF energy generating apparatus.
Preferably, in above-mentioned semi-conductor manufacturing system, said leakage retention device is a pallet.
According to said structure of the present invention; When flowing out treat liquid if the fluid pipeline that links to each other with the cavity lid of first processing unit with process chamber takes place at the tie point place to leak; The treatment fluid that then flows out is known from experience on the leakage retention device of the below that flows to first processing unit with process chamber; And can not flow on second processing unit and/or the 3rd processing unit, thereby can not damage these other processing unit.
And according to said structure of the present invention, the operating personnel of semi-conductor manufacturing system can learn the fluid pipeline generation phenomenon of leakage in the very first time, thereby can be in time to fluid pipeline place under repair or replacement.
Description of drawings
In conjunction with accompanying drawing, and, will more easily more complete understanding be arranged and more easily understand its attendant advantages and characteristic the present invention through with reference to following detailed, wherein:
Fig. 1 schematically shows the block diagram according to the semi-conductor manufacturing system of prior art.
Fig. 2 schematically shows the block diagram according to the semi-conductor manufacturing system of the embodiment of the invention.
Fig. 3 schematically shows the block diagram according to the semi-conductor manufacturing system of second embodiment of the invention.
Need to prove that accompanying drawing is used to explain the present invention, and unrestricted the present invention.Notice that the accompanying drawing of expression structure possibly not be to draw in proportion.And in the accompanying drawing, identical or similar elements indicates identical or similar label.
Embodiment
In order to make content of the present invention clear more and understandable, content of the present invention is described in detail below in conjunction with specific embodiment and accompanying drawing.
< first embodiment >
Fig. 2 schematically shows the block diagram according to the semi-conductor manufacturing system of first embodiment of the invention.
For example, the semi-conductor manufacturing system according to first embodiment of the invention can be PECVD (plasma enhanced chemical vapor deposition) process equipment, high density plasma enhanced chemical vapor deposition system (HDP-CVD) process equipment etc.
As shown in Figure 2, comprise according to this semi-conductor manufacturing system of the embodiment of the invention: have first processing unit 1, second processing unit 5 that is connected with first processing unit 1 of process chamber and be arranged in the 3rd processing unit 4 on second processing unit 5.
For example; Second processing unit 5 is the RF energy generating apparatus that provide RF energy to come activated plasma in the process chamber to processing unit 1, is arranged in the 3rd processing unit 4 on second processing unit 5 and is the RF energy adjuster device that is used to regulate the RF energy that is provided to the process chamber of processing unit 1 by the RF energy generating apparatus.
Wherein, fluid pipeline 2 links to each other with the cavity lid of first processing unit 1 with process chamber at tie point 3.Liquid in the fluid pipeline 2 for example is water, and its temperature that can be used for reducing process chamber is crossed high function to prevent the process chamber temperature.
And wherein, second processing unit 5 and the 3rd processing unit 4 are arranged in the below of the said tie point 3 of first processing unit 1 with process chamber.
Different with prior art is between tie point 3 and the 3rd processing unit 4, to arrange leakage retention device 6.Wherein, Leakage retention device 6 is used for the liquid that admittance is come out from fluid pipeline 2 leakages when fluid pipeline 2 at tie point 3 places that are connected with the cavity lid of first processing unit 1 with process chamber leakage takes place, thereby prevents that leaking the liquid that comes out from fluid pipeline 2 contacts second processing unit 5 and the 3rd processing unit 4.
For example, preferably, in above-mentioned semi-conductor manufacturing system, said leakage retention device is a pallet.
Said structure according to first embodiment of the invention; When flowing out treat liquid if the fluid pipeline 2 that links to each other with the cavity lid of first processing unit 1 with process chamber takes place at tie point 3 places to leak; The treatment fluid that then flows out is known from experience on the leakage retention device 6 of the below that flows to first processing unit 1 with process chamber; And can not flow on other processing unit (second processing unit 5 and/or the 3rd processing unit 4), thereby can not damage these other processing unit.
< second embodiment >
Fig. 3 schematically shows the block diagram according to the semi-conductor manufacturing system of second embodiment of the invention.
As shown in Figure 3; According to the semi-conductor manufacturing system of second embodiment of the invention except comprise first processing unit 1 with process chamber, second processing unit 5 that is connected with first processing unit 1, be arranged on second processing unit 5 the 3rd processing unit 4 and leakage retention device 6; Further preferably, the semi-conductor manufacturing system according to second embodiment of the invention also is included in the liquid sensor of arranging in the leakage retention device 67.
Wherein, (leak of liquid has taken place surface liquid pipeline 2, for example at tie point 3 places leak of liquid has taken place) sent a warning when liquid sensor 7 received liquid in sensing leakage retention device 6.For example, the said breath of notifying is passage of scintillation light information or buzzer information.
Like this, according to the said structure of second embodiment of the invention, the operating personnel of semi-conductor manufacturing system can learn that the phenomenon of leakage takes place fluid pipeline 2 in the very first time, thereby can be in time to fluid pipeline 2 places under repair or replacement.
It is understandable that though the present invention with the preferred embodiment disclosure as above, yet the foregoing description is not in order to limit the present invention.For any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the technology contents of above-mentioned announcement capable of using is made many possible changes and modification to technical scheme of the present invention, or is revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (6)
1. semi-conductor manufacturing system is characterized in that comprising: fluid pipeline, leakage retention device, first processing unit with process chamber, second processing unit that is connected with said first processing unit and be arranged in the 3rd processing unit on said second processing unit;
Wherein, said fluid pipeline links to each other with the cavity lid of first processing unit with process chamber at tie point; And said second processing unit and said the 3rd processing unit are arranged in the below of the said tie point of first processing unit with process chamber;
Said leakage retention device is between said tie point and said the 3rd processing unit; Wherein, Said leakage retention device is used for when fluid pipeline at the said tie point place that is connected with the said cavity lid of said first processing unit with process chamber leakage takes place, admitting the liquid that leaks out from said fluid pipeline, thereby prevents to contact said second processing unit and said the 3rd processing unit from the liquid that said fluid pipeline leaks out.
2. semi-conductor manufacturing system according to claim 1 is characterized in that also comprising: the liquid sensor of in said leakage retention device, arranging, said liquid sensor send a warning when in sensing said leakage retention device, receiving liquid.
3. semi-conductor manufacturing system according to claim 2 is characterized in that, the said breath of notifying is passage of scintillation light information or buzzer information.
4. according to the described semi-conductor manufacturing system of one of claim 1 to 3, it is characterized in that said second processing unit is the RF energy generating apparatus that provides RF energy to come activated plasma in the process chamber to processing unit.
5. semi-conductor manufacturing system according to claim 4 is characterized in that, said the 3rd processing unit is the RF energy adjuster device that is used to regulate the RF energy that is provided to the process chamber of processing unit by the RF energy generating apparatus.
6. according to the described semi-conductor manufacturing system of one of claim 1 to 3, it is characterized in that said leakage retention device is a pallet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102619765A CN102760634A (en) | 2012-07-26 | 2012-07-26 | Semiconductor manufacture system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102619765A CN102760634A (en) | 2012-07-26 | 2012-07-26 | Semiconductor manufacture system |
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| CN102760634A true CN102760634A (en) | 2012-10-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012102619765A Pending CN102760634A (en) | 2012-07-26 | 2012-07-26 | Semiconductor manufacture system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534452A (en) * | 2018-11-08 | 2019-12-03 | 北京北方华创微电子装备有限公司 | Leakage monitoring device and cleaning process chamber for cleaning process chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1545486A (en) * | 2001-07-27 | 2004-11-10 | �Ϻ���ͨ��ѧ | Production of carbon nanotubes |
| KR100641486B1 (en) * | 2002-12-30 | 2006-10-31 | 동부일렉트로닉스 주식회사 | Catchment device that is used in semiconductor factory |
| CN101647101A (en) * | 2007-03-29 | 2010-02-10 | 东京毅力科创株式会社 | Plasma process apparatus |
| CN201713341U (en) * | 2010-04-30 | 2011-01-19 | 大连双迪生物科技有限公司 | Water purifier with water leakage protection function |
| CN102129956A (en) * | 2010-12-16 | 2011-07-20 | 北京七星华创电子股份有限公司 | Leaked liquid collecting and treating device |
-
2012
- 2012-07-26 CN CN2012102619765A patent/CN102760634A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1545486A (en) * | 2001-07-27 | 2004-11-10 | �Ϻ���ͨ��ѧ | Production of carbon nanotubes |
| KR100641486B1 (en) * | 2002-12-30 | 2006-10-31 | 동부일렉트로닉스 주식회사 | Catchment device that is used in semiconductor factory |
| CN101647101A (en) * | 2007-03-29 | 2010-02-10 | 东京毅力科创株式会社 | Plasma process apparatus |
| CN201713341U (en) * | 2010-04-30 | 2011-01-19 | 大连双迪生物科技有限公司 | Water purifier with water leakage protection function |
| CN102129956A (en) * | 2010-12-16 | 2011-07-20 | 北京七星华创电子股份有限公司 | Leaked liquid collecting and treating device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534452A (en) * | 2018-11-08 | 2019-12-03 | 北京北方华创微电子装备有限公司 | Leakage monitoring device and cleaning process chamber for cleaning process chamber |
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| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140504 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20140504 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121031 |