CN102756323A - Chemical mechanical polishing equipment and chemical mechanical polishing method - Google Patents
Chemical mechanical polishing equipment and chemical mechanical polishing method Download PDFInfo
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- CN102756323A CN102756323A CN2011101069903A CN201110106990A CN102756323A CN 102756323 A CN102756323 A CN 102756323A CN 2011101069903 A CN2011101069903 A CN 2011101069903A CN 201110106990 A CN201110106990 A CN 201110106990A CN 102756323 A CN102756323 A CN 102756323A
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Abstract
The invention discloses chemical mechanical polishing equipment and a chemical mechanical polishing method. The chemical mechanical polishing equipment comprises a polishing head, a shaft rod connected with the polishing head, a polishing disk, a polishing pad arranged on the polishing disk, a first transmission part for driving the polishing pad to move linearly, and a second transmission part connected with the shaft rod, wherein the second transmission part is used for driving the polishing head to move linearly through the shaft rod, and the linear movement direction of the polishing head is parallel to that of the polishing pad. According to the chemical mechanical polishing equipment and the chemical mechanical polishing method, the polishing efficiency can be improved, the step height can be effectively reduced, and the lateral pressure on a parallel sample can be avoided.
Description
Technical field
The present invention relates to semiconductor manufacturing and field of semiconductor devices, particularly a kind of chemical-mechanical polisher and cmp method.
Background technology
Chemically mechanical polishing (CMP) technology is a kind of flatening process, since nineteen ninety is introduced into integrated circuit fabrication process, through constantly practice and development, has become the critical process that promotion integrated circuit technique node constantly dwindles.CMP has been widely used in the fleet plough groove isolation structure planarization at present, the gate electrode planarization, and the planarization of tungsten plug is in the technologies such as copper-connection planarization.
Fig. 1 shows the cross-sectional view of a kind of CMP equipment of prior art, and Fig. 2 shows the perspective view of this CMP equipment, and in conjunction with Fig. 1 and Fig. 2, this CMP equipment comprises: rubbing head 10; The axostylus axostyle 11 that links to each other with rubbing head 10; Be arranged at the holding ring that is used for fixing wafer 13 (retaining ring) 12 on the rubbing head 10; Be positioned at the polishing disk (platen) 14 of rubbing head 10 belows; The driving member 15 that links to each other with said polishing disk 14; Be fixed in the polishing pad 16 on the polishing disk 14; Be used on polishing pad 16, spraying the pipeline 17 of polishing fluid (slurry) 18.When carrying out CMP; 11 pairs of rubbing heads 10 of axostylus axostyle provide downward downforce (down force); With wafer 13 by being pressed on the polishing pad 16; Axostylus axostyle 11 drives the axis rotation of said rubbing head 10 along rubbing head 10, and driving member 15 drive polishing disks 14 and polishing pad 16 are along the axis rotation of polishing disk 14, and pipeline 17 is to polishing pad 16 spray polishing fluids 18 simultaneously.In the CMP process; Chemical reaction takes place in the surface portion of wafer 13 and polishing fluid 18; Reacted product is removed under the mechanical abrasive action of polishing pad 16, thereby has reduced the shoulder height (step height) of the surface portion of wafer 13, has realized planarization.
Fig. 3 shows the cross-sectional view of another kind of CMP equipment in the prior art, comprising: rubbing head 20; With the axostylus axostyle 21 that said rubbing head 20 links to each other, axostylus axostyle 21 drives the axis rotation of rubbing head 20 along rubbing head 20; Be positioned at the polishing disk 22 of rubbing head 20 belows; Be arranged at the polishing pad 23 on the polishing disk 22; Drive disk assembly 24; Said drive disk assembly 24 can be motor-operated roller bearing; Drive polishing pad 23 in when polishing and do linear movement, rubbing head 20 by on the polishing pad 23 that is pressed in polishing disk 22 tops and drive the wafer rotation, is accomplished CMP process with wafer simultaneously.
Along with improving constantly of integrated circuit fabrication process level, the characteristic size of device is more and more littler, uses above-mentioned CMP equipment can't reduce shoulder height fast and effectively, can not satisfy process requirements.
Summary of the invention
The problem that the present invention solves is the raising along with technological level, and the CMP equipment of prior art and CMP method can't effectively reduce the problem of shoulder height.
For addressing the above problem; The invention provides a kind of chemical-mechanical polisher; Comprise: rubbing head, the axostylus axostyle, the polishing disk that link to each other with said rubbing head; Be arranged at the polishing pad on the said polishing disk, drive first drive disk assembly of said polishing pad linear movement, also comprise second drive disk assembly that links to each other with said axostylus axostyle; Said second drive disk assembly drives said rubbing head linear movement through said axostylus axostyle, and the direction of linear motion of said rubbing head is parallel to the direction of linear motion of said polishing pad.
Alternatively, said chemical-mechanical polisher also comprises the 3rd drive disk assembly that links to each other with said axostylus axostyle, and said the 3rd drive disk assembly drives the axis rotation of said rubbing head along said rubbing head through said axostylus axostyle.
Alternatively, the 4th drive disk assembly that said chemical-mechanical polisher links to each other with said polishing disk, said the 4th drive disk assembly drive the axis rotation of the said polishing disk of said polishing disk and polishing pad edge.
The present invention also provides a kind of cmp method, comprising:
Substrate is provided, is formed with the style that a plurality of bearing of trends are parallel to each other in the said substrate;
First chemically mechanical polishing is carried out in said substrate, in said first CMP process, driven the rubbing head and the bearing of trend linear movement that is arranged at the said style in polishing pad edge on the polishing disk of chemical-mechanical polisher.
Before said first chemically mechanical polishing; Said cmp method also comprises: second chemically mechanical polishing is carried out in said substrate; In said second CMP process; Drive of the axis rotation of the rubbing head of said chemical-mechanical polisher, drive of the bearing of trend linear movement of said polishing pad along said style along said rubbing head.
After said first chemically mechanical polishing; Said cmp method also comprises: the 3rd chemically mechanical polishing is carried out in said substrate; In said the 3rd CMP process; Drive of the axis rotation of the rubbing head of said chemical-mechanical polisher, drive of the bearing of trend linear movement of said polishing pad along said style along said rubbing head.
Before said first chemically mechanical polishing; Said cmp method also comprises: Four Modernizations machine glazed finish is carried out in said substrate; In said the 4th CMP process; Drive of the axis rotation of the rubbing head of said chemical-mechanical polisher, drive of the axis rotation of said polishing pad along said polishing disk along said rubbing head.
After said first chemically mechanical polishing; Said cmp method also comprises: the 5th chemically mechanical polishing is carried out in said substrate; In said the 5th CMP process; Drive of the axis rotation of the rubbing head of said chemical-mechanical polisher, drive of the axis rotation of said polishing pad along said polishing disk along said rubbing head.
Alternatively, said style comprise that shallow trench isolation leaves, gate electrode or metal interconnect structure.
Compared with prior art, the technical scheme of the embodiment of the invention has following advantage:
The rubbing head of the CMP equipment of the embodiment of the invention and polishing pad can linear movements; And the direction of the two linear movement is parallel; When carrying out chemically mechanical polishing; The direction of the two linear movement is parallel to the bearing of trend of the style (pattern) that forms in the polished substrate, thereby can weaken the lateral pressure to said style, and helps reducing shoulder height.
Description of drawings
Fig. 1 is the cross-sectional view of a kind of chemical-mechanical polisher of prior art;
Fig. 2 is the perspective view of chemical-mechanical polisher shown in Figure 1;
Fig. 3 is the cross-sectional view of the another kind of chemical-mechanical polisher of prior art;
Fig. 4 is the vertical view that the surface has the substrate of a plurality of parallel styles;
Fig. 5 is the cross-sectional view of substrate shown in Figure 4 along a-a ' direction;
Fig. 6 is the cross-sectional view of the chemical-mechanical polisher of the embodiment of the invention;
Fig. 7 is the cross-sectional view of the cmp method of the embodiment of the invention.
The specific embodiment
CMP equipment of the prior art generally all is that rubbing head and polishing disk rotate respectively when work, when technological level improves, can't reduce shoulder height fast and effectively, can not satisfy process requirements.
The inventor is through discovering, the bearing of trend of styles such as along with improving constantly of technological level, suprabasil shallow trench isolation leaves, gate electrode, metal interconnect structure generally all is parallel.With reference to figure 4 and Fig. 5, the bearing of trend of the style 31 that forms in the substrate 30 is parallel to each other, and the rotation meeting of rubbing head and/or polishing disk causes the pressure of side direction to style 31 in the CMP process, may cause the inclination of style 31; On the other hand; Because the shoulder height h of a plurality of styles 31 is along a single direction, and the grinding effect that substrate 30 rotations produce in the CMP process is along all directions, therefore in order to make shoulder height h be decreased to desired value; Often need the longer time, cause production efficiency lower.
The rubbing head of the CMP equipment of the embodiment of the invention and polishing pad can both linear movements; And the direction of the two linear movement is parallel, and when carrying out chemically mechanical polishing, the direction of the two linear movement is parallel to the bearing of trend of the style 31 in the polished substrate 30; Can weaken lateral pressure to said style 31; And because the grinding direction in the CMP process is targeted, thereby can quicken the CMP process, reduce shoulder height h more fast and effectively.
Said style 31 can be that shallow trench isolation in the semiconducter process is from, gate electrode or metal interconnect structure etc.; Need to prove the parallel a certain section situation about being parallel to each other that also comprises each style 31 in a plurality of styles 31 of the bearing of trend of a plurality of styles 31 here.
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Set forth detail in the following description so that make much of the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention does not receive the restriction of the following disclosed specific embodiment.
Fig. 6 shows the cross-sectional view of the CMP equipment of present embodiment, comprising: rubbing head 40; The axostylus axostyle 41 that links to each other with said rubbing head 40; Polishing disk 44, said polishing disk 44 is positioned at rubbing head 40 belows; Be arranged at the polishing pad 45 on the said polishing disk 44; First drive disk assembly 46, said first drive disk assembly 46 drives said polishing pad 45 linear movements; Second drive disk assembly 42 that links to each other with said axostylus axostyle 41, said second drive disk assembly 42 drives said rubbing head 40 linear movements through said axostylus axostyle 41.
As a preferred embodiment; This CMP equipment also comprises: the 3rd drive disk assembly 43 that links to each other with said axostylus axostyle 41; Said the 3rd drive disk assembly 43 drives the axis rotation of said rubbing head 40 along rubbing head 40 through said axostylus axostyle 41, perhaps also can be described as the axis rotation along axostylus axostyle 41; The 4th drive disk assembly 47 that links to each other with said polishing disk 44; Said the 4th drive disk assembly 47 drives said polishing disk 44 and the axis rotation of polishing pad 45 along said polishing disk 44; More specifically; Said the 4th drive disk assembly 47 links to each other with said first drive disk assembly 46 through connector 48, drives the axis rotation of said first drive disk assembly 46 along said polishing disk 44 simultaneously.
Said rubbing head 40 is used for fixing polished substrate when carrying out chemically mechanical polishing, and is similar with prior art, can fix polished substrate through holding ring or similar fixture.
Said first drive disk assembly 46 can comprise the roller bearing by driven by motor, drives the polishing pad 45 that is arranged on the belt on it in when work through self rotation and does linear movement.
Said second drive disk assembly 42 can comprise by the connecting rod of driven by motor, drive link etc.; The time drive said axostylus axostyle 41, rubbing head 40 and the 3rd drive disk assembly 43 in work and do linear movement, its direction of linear motion is parallel to the direction of linear motion of said polishing pad 45.When work; The linear movement of said rubbing head 40 can be back and forth a formula; After promptly moving to an end of polishing disk 44 towards a direction linearity, reverse linear moves to the other end of polishing disk 44 again, in the linear movement process of both direction; Said rubbing head 40 remains downward downforce, with substrate fixed thereon by being pressed on the said polishing pad 45.The linear movement of said rubbing head 40 also can be unidirectional; After promptly moving to an end of polishing disk 44 (downforce that keeps down at this stage rubbing head 40) towards direction linearity; Reverse linear moves to the other end of polishing disk 44 again, and in the reverse linear motion process, the downforce of rubbing head 40 reduces; Make polished substrate break away from polishing pad 45, repeat aforementioned process afterwards.
Said the 3rd drive disk assembly 43 can comprise the rotating shaft by driven by motor, links to each other with said axostylus axostyle 41, when work, can drive axostylus axostyle 41 rotations, and then drives said rubbing head 40 rotations.
Said the 4th drive disk assembly 47 can comprise the rotating shaft by driven by motor; Link to each other with said polishing disk 44; Also link to each other with said first drive disk assembly 46 in addition through connector 48; When work, the axis rotation that can drive said polishing disk 44 and be fixed on the said polishing disk 44 in polishing pad 45 edges on the polishing disk 44.
When stating CMP equipment in the use and carrying out chemically mechanical polishing; Can drive polishing pad 45 linear movements by said first drive disk assembly 46; Drive said rubbing head 40 linear movements by said second drive disk assembly 42 simultaneously, and said rubbing head 40 does not rotate with polishing disk 44; Also can drive polishing pad 45 linear movements by said first drive disk assembly 46, the 3rd drive disk assembly 43 drives said rubbing head 40 rotations simultaneously, and polishing disk 44 does not rotate rubbing head 40 not linear movements with polishing pad 45; Can also drive rubbing head 40 rotations by said the 3rd drive disk assembly 43, the 4th drive disk assembly 47 drives said polishing disk 45 rotations, and rubbing head 40 and polishing pad 45 not linear movements.
The embodiment of the invention also provides a kind of method of chemically mechanical polishing, and is as shown in Figure 7, comprising:
Execution in step S41 provides substrate, is formed with the style that a plurality of bearing of trends are parallel to each other in the said substrate;
Execution in step S42 carries out first chemically mechanical polishing to said substrate, in said first CMP process, drives the rubbing head and the bearing of trend linear movement that is arranged at the said style in polishing pad edge on the polishing disk of chemical-mechanical polisher.
Below in conjunction with Fig. 4 to Fig. 6 the method for the chemically mechanical polishing of present embodiment is elaborated.
With reference to figure 4 and Fig. 5, substrate 30 at first is provided, be formed with the style 31 that a plurality of bearing of trends are parallel to each other in the said substrate 30.Here, the parallel a certain section situation about being parallel to each other that also comprises each style 31 in a plurality of styles 31 of the bearing of trend of a plurality of styles 31.Gate electrode or metal interconnect structure that said style 31 can be the MOS transistor in the semiconductor technology, or the shallow trench isolation between the MOS transistor leaves.
Said substrate 30 is fixed on the rubbing head 40 of CMP equipment shown in Figure 6, the putting position of adjustment substrate 30 makes the bearing of trend of style 31 be parallel to the direction of linear motion of said rubbing head 40 and polishing pad 45.
Drive said first drive disk assembly 46; Drive said polishing pad 45 linear movements, drive said second drive disk assembly 42 simultaneously, drive said rubbing head 40 linear movements; On said polishing pad 45, spray polishing fluid simultaneously, first chemically mechanical polishing is carried out in said substrate 30.The linear movement mode of said rubbing head 40 and polishing pad 45 referring in the preamble to the description of the CMP equipment of Fig. 6, repeat no more here.
Because in first CMP process; Rubbing head 40 and all linear movements of polishing pad 45; And the direction of motion is parallel to the bearing of trend of style 31, thereby can not produce the lateral pressure to style 31, the damage to style 31 of having avoided lateral pressure to cause; In addition, rubbing head 40 and the bearing of trend linear movement of polishing pad 45 along style 31 make that the grinding effect that produces also is in the direction, and be more targeted, can raise the efficiency, and shoulder height h ground be decreased to desired value faster.
Certainly; Difference according to specific embodiment; Before said first chemically mechanical polishing, can also carry out second chemically mechanical polishing to substrate 30, concrete; Drive said the 3rd drive disk assembly 43 and drive the axis rotation of rubbing head 40, drive said first drive disk assembly 46 and drive the bearing of trend linear movement of polishing pad 45 along said style 31 along rubbing head 40.
After said first chemically mechanical polishing; Can also carry out the 3rd chemically mechanical polishing to said substrate 30; In said the 3rd CMP process; Drive said the 3rd drive disk assembly 43 and drive the axis rotation of rubbing head 40, drive said first drive disk assembly 46 and drive the bearing of trend linear movement of polishing pad 45 along said style 31 along said rubbing head 40.
Difference according to specific embodiment; Before said first chemically mechanical polishing; Can also carry out Four Modernizations machine glazed finish to said substrate 30; Drive said the 3rd drive disk assembly 43 and drive the axis rotation of rubbing head 40, drive said the 4th drive disk assembly 47 and drive polishing disk 44 and the axis rotation of polishing pad 45 along said polishing disk 44 along said rubbing head 40.
After said first chemically mechanical polishing; Can also carry out the 5th chemically mechanical polishing to said substrate 30; Drive said the 3rd drive disk assembly 43 and drive the axis rotation of rubbing head 40, drive said the 4th drive disk assembly 47 and drive polishing disk 44 and the axis rotation of polishing pad 45 along said polishing disk 44 along said rubbing head 40.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection domain of technical scheme of the present invention according to technical spirit of the present invention.
Claims (9)
1. chemical-mechanical polisher; Comprise: rubbing head, the axostylus axostyle, the polishing disk that link to each other with said rubbing head, be arranged at the polishing pad on the said polishing disk, drive first drive disk assembly of said polishing pad linear movement; It is characterized in that; Also comprise second drive disk assembly that links to each other with said axostylus axostyle, said second drive disk assembly drives said rubbing head linear movement through said axostylus axostyle, and the direction of linear motion of said rubbing head is parallel to the direction of linear motion of said polishing pad.
2. chemical-mechanical polisher according to claim 1 is characterized in that, also comprises the 3rd drive disk assembly that links to each other with said axostylus axostyle, and said the 3rd drive disk assembly drives the axis rotation of said rubbing head along said rubbing head through said axostylus axostyle.
3. chemical-mechanical polisher according to claim 1 is characterized in that, also comprises the 4th drive disk assembly that links to each other with said polishing disk, and said the 4th drive disk assembly drives the axis rotation of the said polishing disk of said polishing disk and polishing pad edge.
4. a cmp method is characterized in that, comprising:
Substrate is provided, is formed with the style that a plurality of bearing of trends are parallel to each other in the said substrate;
First chemically mechanical polishing is carried out in said substrate, in said first CMP process, driven the rubbing head and the bearing of trend linear movement that is arranged at the said style in polishing pad edge on the polishing disk of chemical-mechanical polisher.
5. cmp method according to claim 4; It is characterized in that; Before said first chemically mechanical polishing, also comprise: second chemically mechanical polishing is carried out in said substrate, in said second CMP process; Drive of the axis rotation of the rubbing head of said chemical-mechanical polisher, drive of the bearing of trend linear movement of said polishing pad along said style along said rubbing head.
6. cmp method according to claim 4; It is characterized in that; After said first chemically mechanical polishing, also comprise: the 3rd chemically mechanical polishing is carried out in said substrate, in said the 3rd CMP process; Drive of the axis rotation of the rubbing head of said chemical-mechanical polisher, drive of the bearing of trend linear movement of said polishing pad along said style along said rubbing head.
7. cmp method according to claim 4; It is characterized in that; Before said first chemically mechanical polishing, also comprise: Four Modernizations machine glazed finish is carried out in said substrate, in said the 4th CMP process; Drive of the axis rotation of the rubbing head of said chemical-mechanical polisher, drive of the axis rotation of said polishing pad along said polishing disk along said rubbing head.
8. cmp method according to claim 4; It is characterized in that; After said first chemically mechanical polishing, also comprise: the 5th chemically mechanical polishing is carried out in said substrate, in said the 5th CMP process; Drive of the axis rotation of the rubbing head of said chemical-mechanical polisher, drive of the axis rotation of said polishing pad along said polishing disk along said rubbing head.
9. cmp method according to claim 4 is characterized in that, said style comprises that shallow trench isolation leaves, gate electrode or metal interconnect structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101069903A CN102756323A (en) | 2011-04-27 | 2011-04-27 | Chemical mechanical polishing equipment and chemical mechanical polishing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101069903A CN102756323A (en) | 2011-04-27 | 2011-04-27 | Chemical mechanical polishing equipment and chemical mechanical polishing method |
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| CN102756323A true CN102756323A (en) | 2012-10-31 |
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| CN2011101069903A Pending CN102756323A (en) | 2011-04-27 | 2011-04-27 | Chemical mechanical polishing equipment and chemical mechanical polishing method |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09148284A (en) * | 1995-11-29 | 1997-06-06 | Hitachi Ltd | Method and apparatus for chemical-mechanical polishing and manufacture of semiconductor substrate |
| JPH10112449A (en) * | 1996-10-07 | 1998-04-28 | Hitachi Ltd | Polishing method and polishing device |
| US20040053560A1 (en) * | 2002-09-16 | 2004-03-18 | Lizhong Sun | Control of removal profile in electrochemically assisted CMP |
| KR20050007503A (en) * | 2003-07-08 | 2005-01-19 | 삼성전자주식회사 | Chemical mechanical polishing equipment |
| CN1606485A (en) * | 2001-12-20 | 2005-04-13 | 拉姆研究公司 | Air platen for leading edge and trailing edge control |
| CN1607992A (en) * | 2001-12-28 | 2005-04-20 | 拉姆研究公司 | Grooved rollers for a linear chemical mechanical planarization system |
| KR20060030257A (en) * | 2004-10-05 | 2006-04-10 | 삼성전자주식회사 | Chemical mechanical polishing apparatus used in manufacturing semiconductor devices |
| JP2008036735A (en) * | 2006-08-03 | 2008-02-21 | Sony Corp | Polishing pad, polishing device, polishing method |
| KR20100119398A (en) * | 2009-04-30 | 2010-11-09 | 주식회사 하이닉스반도체 | Apparatus of chemical mechanical polishing |
-
2011
- 2011-04-27 CN CN2011101069903A patent/CN102756323A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09148284A (en) * | 1995-11-29 | 1997-06-06 | Hitachi Ltd | Method and apparatus for chemical-mechanical polishing and manufacture of semiconductor substrate |
| JPH10112449A (en) * | 1996-10-07 | 1998-04-28 | Hitachi Ltd | Polishing method and polishing device |
| CN1606485A (en) * | 2001-12-20 | 2005-04-13 | 拉姆研究公司 | Air platen for leading edge and trailing edge control |
| CN1607992A (en) * | 2001-12-28 | 2005-04-20 | 拉姆研究公司 | Grooved rollers for a linear chemical mechanical planarization system |
| US20040053560A1 (en) * | 2002-09-16 | 2004-03-18 | Lizhong Sun | Control of removal profile in electrochemically assisted CMP |
| KR20050007503A (en) * | 2003-07-08 | 2005-01-19 | 삼성전자주식회사 | Chemical mechanical polishing equipment |
| KR20060030257A (en) * | 2004-10-05 | 2006-04-10 | 삼성전자주식회사 | Chemical mechanical polishing apparatus used in manufacturing semiconductor devices |
| JP2008036735A (en) * | 2006-08-03 | 2008-02-21 | Sony Corp | Polishing pad, polishing device, polishing method |
| KR20100119398A (en) * | 2009-04-30 | 2010-11-09 | 주식회사 하이닉스반도체 | Apparatus of chemical mechanical polishing |
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Application publication date: 20121031 |