CN102747331A - Sputtering machine - Google Patents
Sputtering machine Download PDFInfo
- Publication number
- CN102747331A CN102747331A CN2012102290527A CN201210229052A CN102747331A CN 102747331 A CN102747331 A CN 102747331A CN 2012102290527 A CN2012102290527 A CN 2012102290527A CN 201210229052 A CN201210229052 A CN 201210229052A CN 102747331 A CN102747331 A CN 102747331A
- Authority
- CN
- China
- Prior art keywords
- carrier
- sputter
- uneven surface
- glass substrate
- negative electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000011521 glass Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 21
- 229910000861 Mg alloy Inorganic materials 0.000 claims description 6
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical group [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- 238000010586 diagram Methods 0.000 description 10
- 239000012634 fragment Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a sputtering machine which is suitable for bearing a glass substrate to carry out a sputtering process on the glass substrate. The sputtering machine comprises a sputtering chamber, a cathode, a substrate carrying platform and a plurality of fixing structures. The sputtering chamber has an opening. The cathode is located in the sputtering chamber, and the opening exposes the cathode. The substrate carrier comprises a base and a bearing plate. The pedestal covers an opening of the sputtering chamber. The bearing disc is positioned between the base and the cathode. The carrier plate has a rough surface facing the cathode, and the centerline average roughness of the rough surface is between 4 microns and 8 microns. The fixing structure protrudes from the rough surface and is used for fixing the glass substrate between the rough surface and the cathode.
Description
Technical field
The invention relates to a kind of depositing device of mf, especially a kind of sputter machine.
Background technology
Sputter (sputtering) is a kind of physical vapor deposition (PVD) method that is used for forming mf, and this method can be applied in the processing procedure of display panels, electric slurry display panel or semi-conductive microcircuit.So-called sputter is the ion bombardment sputter target of utilizing in magnetic field or the feasible electricity slurry of electric field (target), spills and flies to by the sputter thing with the target atom that causes sputter target surface (front).Afterwards, fly to by the target atom of sputter thing and can be attached to, on by the surface of sputter thing, to form the layer of metal layer by the surface of sputter thing.
In the process of making display panels, known techniques is that glass substrate is positioned on the quartzy carrier (Susceptor) of making of a sputter machine.Then, again glass substrate is carried out sputter, form a metal level with surface at glass substrate.Afterwards, again this metal level is carried out processing procedures such as little shadow and etching, so that this metal level is transformed into many strip metals lead.Since carrier in order to the area of a loading end of bearing glass substrate area greater than glass substrate, therefore target atom also can be attached to except meeting is attached to glass substrate on the carrier of quartzy system when sputter.In other words,,, meeting also can be formed on the loading end of carrier except being formed on the surface of glass substrate via metal level that sputter produced.
Yet because the bonding force between the carrier of the quartzy system of metal level and convention is not enough, therefore partly metal level tends to peel off and form metal fragment from carrier, and falls to glass substrate.And these metal fragments tend to seriously influence the quality of display panels.For example, after sputter process, the mfr can move carrier, will be moved to other equipment from carrier by the glass substrate of sputter afterwards, then the metal level on the glass substrate is carried out processing procedures such as little shadow and etching.Yet, in the process that moves carrier and glass substrate, tend to fall on the metal level that is positioned at glass substrate from the metal fragment that carrier is peeled off.If metal fragment is to drop on the predetermined metal level that is removed, then behind etching process, etching solution possibly only corrode and remove metal fragment and but not remove or only remove partially the metal level that is covered by metal fragment.Thus; Thisly cause metal level to remove incomplete situation just may to cause many predetermined metal wires that should be electrically insulated to be in the state that electrically conducts each other on the contrary because of metal fragment, and then influence the quality of the yield and the display panels of display panels processing procedure.
In addition, peel off from the quartzy carrier of making, so the mfr also needs usually carrier to be cleaned and safeguard because metal level is easy.Be also can make the maintenance cost of sputter machine high with the quartzy carrier of making of convention.
Summary of the invention
Because the problems referred to above, the present invention provides a kind of sputter machine, and wherein the carrier of sputter machine can produce the bonding force that is superior to known techniques with metal level attached to it.
In one embodiment of this invention, above-mentioned sputter machine is suitable for carrying a glass substrate so that glass substrate is carried out sputter process.This sputter machine comprises a sputter chamber, a negative electrode, a baseplate carrier and a plurality of fixed sturcture.The sputter chamber has an opening.Negative electrode is positioned at the sputter chamber, and above-mentioned opening exposes negative electrode.Baseplate carrier comprises a base and a carrier.Base covers the opening of sputter chamber.Carrier is between base and negative electrode.Carrier has a uneven surface, and this uneven surface is towards negative electrode, and the center line average roughness of uneven surface is between 4 microns to 8 microns.Fixed sturcture is outstanding from uneven surface, in order to glass substrate is fixed between uneven surface and the negative electrode.
Based on the above embodiments, because the center line average roughness of the uneven surface of carrier is between 4 microns to 8 microns, therefore when the sputter machine carried out sputter, target atom can firmly be attached on this uneven surface.Be with, compared to known techniques, have preferable bonding force between the carrier of the formed metal level of target atom and the foregoing description.
The explanation of above explanation and following embodiment about content of the present invention in order to demonstration with explain spirit of the present invention and principle, and claim protection domain of the present invention explanation further is provided.
Description of drawings
Fig. 1 illustrates the synoptic diagram of the sputter machine of one embodiment of the invention, and wherein the baseplate carrier of this sputter machine is in the open site;
Fig. 2 illustrates another synoptic diagram of the sputter machine of Fig. 1, and wherein the baseplate carrier of sputter machine is in the close position;
Fig. 3 is the local enlarged diagram of the baseplate carrier of Fig. 1;
The diagrammatic cross-section that Fig. 4 is drawn for the section line 4-4 along Fig. 2;
Fig. 5 is the enlarged diagram of the fixed sturcture of Fig. 1;
Fig. 6 is the enlarged diagram of the strut member of Fig. 1.
[primary clustering nomenclature]
100 sputter machines
110 sputter chambers
112 openings
120 negative electrodes
130 baseplate carriers
132 bases
134 carriers
The 134a uneven surface
The 134b strut member
140 fixed sturctures
The 140a end face
Embodiment
Below in embodiment, be described in detail detailed features of the present invention and advantage; Its content is enough to make any correlation technique person of being familiar with to understand technology contents of the present invention and implements according to this; And according to content, claim protection domain and the accompanying drawing that this specification sheets disclosed, any correlation technique person of being familiar with can understand purpose and the advantage that the present invention is correlated with easily.Following embodiment further explain viewpoint of the present invention, but non-to limit category of the present invention anyways.
This specification sheets described center line average roughness (Ra) is defined as: one section coarse curve that is measured as L of intercepting from the machined surface; And be the x axle with coarse dark medullary ray in this length L; The vertical line of getting medullary ray is the y axle, and then coarse curve can use y=f (x) to show it.With the medullary ray is that benchmark is with the lower curve reflexed.The area that the whole curve behind reflexed is contained above computing center's line then removes it to measure length L again.Institute's value is a unit with μ m, is machined surface and measures the center line average roughness value in the length range.
The mathematical definition of center line average roughness (Ra) is:
Fig. 1 illustrates the synoptic diagram of the sputter machine of one embodiment of the invention, and wherein the baseplate carrier of this sputter machine is in the open site.Please with reference to Fig. 1, sputter machine 100 comprises a sputter chamber 110, a negative electrode 120, a baseplate carrier 130 and a plurality of fixed sturcture 140.Sputter chamber 110 has an opening 112.Negative electrode 120 is positioned at sputter chamber 110, and opening 112 exposes negative electrode 120.
Please referring to figs. 1 through Fig. 3, wherein Fig. 2 illustrates the synoptic diagram that the baseplate carrier of the sputter machine of Fig. 1 is in the close position, and Fig. 3 is the enlarged diagram of the baseplate carrier of Fig. 1.Baseplate carrier 130 comprises a base 132 and a carrier 134.Base 132 for example is a side that is articulated in sputter chamber 110, is can be via moving between an open site (as shown in Figure 1) and a make-position (as shown in Figure 2) with respect to rotatablely moving of sputter chamber 110 with baseplate carrier 130.When baseplate carrier 130 was positioned at make-position, base 132 covered the opening 112 of sputter chamber 110.Carrier 134 for example is to be assembled on the base 132 removably.
Please with reference to Fig. 2 and Fig. 4, Fig. 4 diagrammatic cross-section of being drawn wherein for section line 4-4 along Fig. 2.When base 132 covers opening 112 via rotatablely moving (when baseplate carrier 130 is positioned at make-position), carrier 134 is between base 132 and negative electrode 120, and wherein a uneven surface 134a of carrier 134 is towards negative electrode 120.
The center line average roughness of uneven surface 134a is between 4 microns to 8 microns.In one embodiment, the mfr can be via sandblast (Sand Blasting) is carried out on a surface of carrier 134 so that this surface forms uneven surface 134a.Yet when uneven surface 134a is when being formed via the mode of sandblast, the hardness of carrier 134 is whether the center line average roughness of uneven surface 134a can reach one of factor between 4 microns to 8 microns.For example, the material of the carrier of convention is quartzy, and its Mohs' hardness is 6.7.Because quartzy hardness is higher; Be that technology with present sandblast is difficult to make via the carrier of particles hit convention on the carrier of convention and forms the uneven surface of center line average roughness between 4 microns to 8 microns, wherein aforesaid particle for example is aloxite or glass sand.Yet when the hardness of carrier 134 is between between the 47Kg/mm to 77Kg/mm the time, present sandblast technology just can form the uneven surface 134a of center line average roughness between 4 microns to 8 microns on the carrier 134.Aspect material, in order to let the hardness of carrier 134 between between the 7Kg/mm to 77Kg/mm, the material of carrier 134 for example is an aluminum magnesium alloy.In one embodiment, the weight percent of the magnesium of this aluminum magnesium alloy is between 2.2% to 2.8%.In another embodiment, the material of this carrier 134 is No. 5052 aluminum magnesium alloys of international alloy naming system (International Alloy Designation System).Though the mode of above-mentioned formation uneven surface be with sandblast as illustrating, present embodiment is not the mode that forms uneven surface in order to limit.
Please with reference to Fig. 1, Fig. 4 and Fig. 5, wherein Fig. 5 is the enlarged diagram of the fixed sturcture 140 of Fig. 1.Fixed sturcture 140 is outstanding from uneven surface 134a, in order to a glass substrate (not illustrating) is fixed between uneven surface 134a and the negative electrode 120.In the present embodiment, an end of fixed sturcture 140 is connected in base 132, and carrier 134 and outstanding from uneven surface 134a is then run through in the other end of fixed sturcture 140.The end that protrudes in uneven surface 134a of fixed sturcture 140 has an end face 140a.End face 140a is in order to contact with glass substrate, so that glass substrate and uneven surface 134a separate a distance.In addition, the center line average roughness of end face 140a is lower than the center line average roughness of uneven surface 134a.
Please jointly with reference to Fig. 1 and Fig. 6, wherein Fig. 6 is the enlarged diagram of the strut member 134b of Fig. 1.In other embodiment of present embodiment and part, for support glass substrate more firmly, except fixed sturcture 140, loading plate 134 more can comprise a plurality of strut member 134b.Strut member 134b protrudes in uneven surface 134a, and strut member 134b comprises a bearing surface in order to the support glass substrate, and wherein the center line average roughness of bearing surface also is lower than the center line average roughness of uneven surface 134a.
Based on the above embodiments, because the center line average roughness of the uneven surface of carrier is between 4 microns to 8 microns, therefore when the sputter machine carried out sputter, target atom can firmly be attached on this uneven surface.Be with, compared to known techniques, have preferable bonding force between the carrier of the formed metal level of target atom and the foregoing description.In other words, the formed metal level of target atom is difficult on the carrier of the foregoing description, peeling off.Thus, adopt the display panels processing procedure of the sputter machine of the foregoing description will have preferable yield and quality.
In addition, because the formed metal level of target atom is difficult on the carrier of the foregoing description, peeling off, be with compared to known techniques, the user of the sputter machine of the foregoing description can reduce and cleans and the frequency of maintaining loading dish.Be with, the sputter facility of the foregoing description have lower maintenance cost.
Though the present invention discloses as above with preferred embodiment; Right its is not in order to limit the present invention; Under the situation that does not deviate from spirit of the present invention and essence thereof; Those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (6)
1. a sputter machine is suitable for carrying a glass substrate so that this glass substrate is carried out sputter process, it is characterized in that, this sputter machine comprises:
One sputter chamber has an opening;
One negative electrode be positioned at this sputter chamber, and this opening exposes this negative electrode;
One baseplate carrier comprises: a base covers this opening; And a carrier, between this base and this negative electrode, this carrier has a uneven surface, and this uneven surface is towards this negative electrode, and the center line average roughness of this uneven surface is between 4 microns to 8 microns; And
A plurality of fixed sturctures, this uneven surface is outstanding certainly, in order to this glass substrate is fixed in this uneven surface and this negative electrode between.
2. sputter machine as claimed in claim 1 is characterized in that the material of this carrier is an aluminum magnesium alloy.
3. sputter machine as claimed in claim 2 is characterized in that, the weight percent of the magnesium of this aluminum magnesium alloy is between 2.2% to 2.8%.
4. sputter machine as claimed in claim 3 is characterized in that, the material of this carrier is No. 5052 aluminum magnesium alloys of international alloy naming system.
5. sputter machine as claimed in claim 3 is characterized in that this carrier is fixed in this base separably.
6. sputter machine as claimed in claim 1 is characterized in that, each this fixed sturcture comprises an end face, and this end face is in order to contact with this glass substrate, and the center line average roughness of this end face is lower than the center line average roughness of this uneven surface.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101112324 | 2012-04-06 | ||
| TW101112324A TWI473899B (en) | 2012-04-06 | 2012-04-06 | Sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102747331A true CN102747331A (en) | 2012-10-24 |
Family
ID=47027812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102290527A Pending CN102747331A (en) | 2012-04-06 | 2012-07-02 | Sputtering machine |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102747331A (en) |
| TW (1) | TWI473899B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001064771A (en) * | 1999-08-27 | 2001-03-13 | Kojundo Chem Lab Co Ltd | Sputtering target |
| JP2002043397A (en) * | 2000-07-26 | 2002-02-08 | Hitachi Chem Co Ltd | Susceptor |
| CN1587437A (en) * | 2004-07-01 | 2005-03-02 | 友达光电股份有限公司 | Sputtering machine table and its sputtering carrying table |
| CN102400108A (en) * | 2011-10-18 | 2012-04-04 | 友达光电股份有限公司 | Thin film deposition machine and bearing part thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI240010B (en) * | 2004-06-23 | 2005-09-21 | Au Optronics Corp | Sputtering apparatus and carrier thereof |
-
2012
- 2012-04-06 TW TW101112324A patent/TWI473899B/en not_active IP Right Cessation
- 2012-07-02 CN CN2012102290527A patent/CN102747331A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001064771A (en) * | 1999-08-27 | 2001-03-13 | Kojundo Chem Lab Co Ltd | Sputtering target |
| JP2002043397A (en) * | 2000-07-26 | 2002-02-08 | Hitachi Chem Co Ltd | Susceptor |
| CN1587437A (en) * | 2004-07-01 | 2005-03-02 | 友达光电股份有限公司 | Sputtering machine table and its sputtering carrying table |
| CN102400108A (en) * | 2011-10-18 | 2012-04-04 | 友达光电股份有限公司 | Thin film deposition machine and bearing part thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201341556A (en) | 2013-10-16 |
| TWI473899B (en) | 2015-02-21 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121024 |