CN102738184A - Back-side illuminated imaging sensor - Google Patents
Back-side illuminated imaging sensor Download PDFInfo
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- CN102738184A CN102738184A CN2011100961787A CN201110096178A CN102738184A CN 102738184 A CN102738184 A CN 102738184A CN 2011100961787 A CN2011100961787 A CN 2011100961787A CN 201110096178 A CN201110096178 A CN 201110096178A CN 102738184 A CN102738184 A CN 102738184A
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- image sensor
- back side
- transfering transistor
- side illumination
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Abstract
The invention relates to a back-side illuminated imaging sensor. The imaging sensor comprises at least a pixel region including a photo diode and a transfer transistor. The transfer transistor is provided with a control electrode consisting of a gate polysilicon and a gate oxide and used for receiving control instructions, a first electrode coupled with the photo diode, and a second electrode. The transfer transistor is provided with a sensing channel which partly surrounds a sunken space filled by the gate polysilicon and the gate oxide of the transfer transistor.
Description
Technical field
The present invention relates to the back lighting transducer, refer to a kind of back lighting transducer that has than small size especially.
Background technology
Along with complementary (the complementary metal-oxide-metal of metal oxide; CMOS) semiconductor image sensor (CMOS image sensor; CIS) reducing of middle Pixel Dimensions, the various factors of reduction sensing usefulness in the sensor array, as: quantum effect (quantum efficiency; QE), crosstalk (crosstalk) and dark current (dark current) etc., it is more remarkable all can to become.As far as the conventional images transducer, for example: front illumination sensor (front side illuminated sensor), the lens of each element sensor all are fabricated on the front (front side) of substrate.Therefore, incident light need pass between the circuit that metal level constitutes wherein that the dielectric medium of multilayer (dielectric) could arrive photodiode (photo diode), otherwise the light in advancing can be absorbed or reflect by metal or other reflexive material.
For the area of simplifying imageing sensor, prior art has proposed the structure of back side illumination image sensor.Concerning back side illumination image sensor, incident light is to be throwed into by the back side of the substrate of this imageing sensor, so the front of this substrate can be used on many functional circuit.With reference to Fig. 1, it is the fragmentary cross-sectional view of the dot structure of existing back side illumination image sensor.This dot structure includes photodiode 100, transfering transistor (transfer transistor) 200, reset transistor (reset transistor) 500, and isolation structures 400.Photodiode 100 includes N type doped layer NL and P type doped layer PL, in order to convert this incident light into electronic signal.Transfering transistor 200 is (in this example; It is the N type metal oxide compensated semiconductor transistor that is formed on the p type wells) so according to by the received control command of gate electrode; This electronic signal is transferred to other circuit from photodiode 100 via N type doping interface channel 300 among, so that follow-up processing.Isolation structures 400 then is the integrality that is used for preventing this electronic signal of noise pollution at this.Reset transistor 500 is then in order to replacement photodiode 100.
Via using backside illumination technology, more and more many substrate front side spaces can be used to set up the circuit of multiple different functionalities.Yet, for the advantage of application development backside illumination technology further, more and more many simplifying of research input back lighting transducers and with the technology of its area utilization ratio raising.
Summary of the invention
One of the object of the invention is to provide a kind of to have the back side illumination image sensor of simplifying area and solves above-mentioned problem.
According to one embodiment of the invention; It provides a kind of back lighting (back-side illumination; BSI) imageing sensor; Include at least one pixel region; This pixel region includes photodiode (photo diode) and transfering transistor (transfer transistor), this transfering transistor have by grid polycrystalline silicon (gate poly) and grid oxic horizon (gate oxide) constitute and in order to the control electrode of reception control command, be coupled to first electrode of this photodiode and second electrode.Wherein this transfering transistor has induction channels, and this induction channels part is round the sinking space of being inserted by this grid polycrystalline silicon and this grid oxic horizon of this transfering transistor.
According to another embodiment of the present invention, it provides a kind of back side illumination image sensor, includes at least one pixel region, and this pixel region includes photodiode and transfering transistor.This photodiode includes first doped substrate (doped substrate) and second doped substrate.This transfering transistor has by grid polycrystalline silicon and grid oxic horizon and constitutes and in order to the control electrode that receives control command, first electrode that is coupled to this photodiode, and second electrode.Wherein this first doped substrate is in order to this first electrode as this transfering transistor.
According to another embodiment of the present invention, it provides a kind of back side illumination image sensor, includes at least one pixel region, and this pixel region includes photodiode and at least one transistor.This transistor has by grid polycrystalline silicon and grid oxic horizon and constitutes and in order to the control electrode that receives control command, first electrode that is coupled to this photodiode, and second electrode.Wherein this transistor has induction channels, and this induction channels part is round the sinking space of being inserted by this grid polycrystalline silicon and this grid oxic horizon of this transfering transistor.
Description of drawings
Fig. 1 is the fragmentary cross-sectional view of the dot structure of existing back side illumination image sensor;
Fig. 2 is the fragmentary cross-sectional view according to the dot structure of the back side illumination image sensor of one embodiment of the invention realization;
Fig. 3 is the fragmentary cross-sectional view according to the dot structure of the back side illumination image sensor of another embodiment of the present invention realization;
Fig. 4 is the fragmentary cross-sectional view according to the dot structure of the back side illumination image sensor of another embodiment of the present invention realization.
Embodiment
The notion of one embodiment of the invention is to combine the N type doped layer NL and the N type doping interface channel 300 of photodiode shown in Figure 1 100.As shown in Figure 1, N type doping interface channel 300 also is used as the drain electrode (drain electrode) of transfering transistor 200, in order to connect the N type doped layer NL of photodiode 100.When transfering transistor 200 was activated, conduction pathway level accordingly was formed under the grid oxic horizon (being expressed as GO in the drawings) of this gate electrode.Because the N type doped layer NL and the N type doping interface channel 300 of photodiode 100 have identical doping type (doping type), both can be bonded to together and lasting performance function separately.Based on above-mentioned observed result, follow-up specification will propose the details of a plurality of example and structurally associateds about back side illumination image sensor.
With reference to Fig. 2, it is the fragmentary cross-sectional view according to the dot structure of the back side illumination image sensor of one embodiment of the invention realization.Compared to existing dot structure shown in Figure 1; Isolation structures 400 shown in Fig. 2 can be excavated sinking space in manufacture process, the grid polycrystalline silicon of transfering transistor 200A gate electrode (being expressed as PO in the drawings) is then can be received in this sinking space on the isolation structures 400 with grid oxic horizon (being expressed as GO in the drawings).Hereat when transfering transistor 200A is activated; The N type doped layer NL of photodiode 100 can be as the electrode of transfering transistor 200A (for example: general running drain electrode); And induction channels is formed among the transfering transistor 200A, and this induction channels part is round this grid of transfering transistor 200A.Because the structure of this induction channels, so this electronic signal of being sent from photodiode 100 just almost transmitting with vertical mode, rather than is flatly transmitted.Compared to traditional back lighting dot structure shown in Figure 1, the shared area of the transfering transistor 200A that the present invention proposes just can therefore and significantly reduce.
Among another embodiment of the present invention, the substrate of dot structure can excavate and form sinking space.With reference to Fig. 3, it is the fragmentary cross-sectional view according to the dot structure of the back side illumination image sensor of another embodiment of the present invention realization.Compared to dot structure shown in Figure 2, all through excavating to form this sinking space, wherein this sinking space is then inserted by grid polycrystalline silicon and the grid oxic horizon of transfering transistor 200B in manufacture process for isolation structures 400 among Fig. 3 and substrate 202.In this embodiment; The N type doped layer NL of photodiode 100 also can generally operate as the electrode of transfering transistor 200B; And because this sinking space is formed among isolation structures 400 and the substrate 202, formed induction channels can almost present vertical state among the transfering transistor 200B.Therefore, the shared area of transfering transistor 200B also can significantly reduce to reach the purpose of simplifying.
Note that example in Fig. 2, Fig. 3 only with explanation spirit of the present invention, but not is used for limiting scope of the present invention.For instance, notion of the present invention can be applied on the P type substrate just like being applied on the N type substrate, that is to say that the transistor among the present invention or the conduction type of photodiode can be P type or N type.
In addition, this sinking space also is not limited to and is formed on the isolation structures, and this sinking space also can form on the substrate separately.Understand notion of the present invention with reference to Fig. 4, Fig. 4 is the fragmentary cross-sectional view according to the dot structure of the back side illumination image sensor of another embodiment of the present invention realization.In this embodiment, the grid oxic horizon of transfering transistor 200C and reset transistor 500C all is placed in the sinking space in the substrate, and N type interface channel 300C then links together photodiode 100 with transfering transistor 200C.As transfering transistor 200C (or reset transistor 500C) when being activated; The induction channels of a U type just can be formed under its grid oxic horizon; And under the prerequisite of keeping identical induction channels length; The length of its gate electrode just can shorten, hereat can be further with the area of dot structure simplifying more.Variation in these designs also drops within the category of the present invention.
In sum, each embodiment of the present invention provides and has had the back side illumination image sensor of simplifying area more.Be applied in formed sinking space in the manufacturing process; Transistorized conduction pathway can crooked (askew) or vertical mode form (that is; This conduction pathway is not that mode with level is formed), thereby obtain one and have the dot structure of simplifying area.
The above is merely the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (10)
1. back side illumination image sensor includes:
At least one pixel region includes:
Photodiode; And
Transfering transistor has by grid polycrystalline silicon and grid oxic horizon and constitutes and in order to the control electrode that receives control command, first electrode that is coupled to said photodiode, and second electrode;
Wherein said transfering transistor has induction channels, and said induction channels part is round the sinking space of being inserted by the said grid polycrystalline silicon and the said grid oxic horizon of said transfering transistor.
2. back side illumination image sensor as claimed in claim 1, wherein said pixel region also includes isolation structures, and said isolation structures is in order to isolating from other circuit with said pixel region, and said sinking space only is formed on the said isolation structures.
3. back side illumination image sensor as claimed in claim 1; Wherein said pixel region also includes isolation structures; Said isolation structures is in order to isolate from other circuit with said pixel region; And a said sinking space part is formed on the said isolation structures, and a part is formed on the substrate of said pixel region.
4. back side illumination image sensor as claimed in claim 1, the conduction type of wherein said transfering transistor are the N type.
5. back side illumination image sensor as claimed in claim 1, the conduction type of wherein said transfering transistor are the P type.
6. back side illumination image sensor as claimed in claim 1, wherein said photodiode include first doped substrate and second doped substrate, and said first doped substrate is in order to said first electrode as said transfering transistor.
7. back side illumination image sensor includes:
At least one pixel region includes:
Photodiode includes first doped substrate and second doped substrate; And
Transfering transistor has by grid polycrystalline silicon and grid oxic horizon and constitutes and in order to the control electrode that receives control command, first electrode that is coupled to said photodiode, and second electrode;
Wherein said first doped substrate is in order to said first electrode as said transfering transistor.
8. back side illumination image sensor as claimed in claim 7, the conduction type of wherein said transfering transistor are the N type.
9. back side illumination image sensor as claimed in claim 7, the conduction type of wherein said transfering transistor are the P type.
10. back side illumination image sensor includes:
At least one pixel region includes:
Photodiode; And
At least one transistor has by grid polycrystalline silicon and grid oxic horizon and constitutes and in order to the control electrode that receives control command, first electrode that is coupled to said photodiode, and second electrode;
Wherein said transistor has induction channels, and said induction channels part is round the sinking space of being inserted by the said grid polycrystalline silicon and the said grid oxic horizon of said transfering transistor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011100961787A CN102738184A (en) | 2011-04-14 | 2011-04-14 | Back-side illuminated imaging sensor |
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| CN2011100961787A CN102738184A (en) | 2011-04-14 | 2011-04-14 | Back-side illuminated imaging sensor |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060084195A1 (en) * | 2004-10-20 | 2006-04-20 | Samsung Electronics Co., Ltd. | Methods for fabricating solid state image sensor devices having non-planar transistors |
| CN101228631A (en) * | 2005-06-02 | 2008-07-23 | 索尼株式会社 | Solid imaging element and manufacturing method thereof |
| JP2011066241A (en) * | 2009-09-17 | 2011-03-31 | Sony Corp | Solid-state image pickup device and method for manufacturing the same, and electronic apparatus |
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2011
- 2011-04-14 CN CN2011100961787A patent/CN102738184A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060084195A1 (en) * | 2004-10-20 | 2006-04-20 | Samsung Electronics Co., Ltd. | Methods for fabricating solid state image sensor devices having non-planar transistors |
| CN101228631A (en) * | 2005-06-02 | 2008-07-23 | 索尼株式会社 | Solid imaging element and manufacturing method thereof |
| JP2011066241A (en) * | 2009-09-17 | 2011-03-31 | Sony Corp | Solid-state image pickup device and method for manufacturing the same, and electronic apparatus |
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Application publication date: 20121017 |