CN102737964A - 一种晶体硅片及其扩散方法 - Google Patents
一种晶体硅片及其扩散方法 Download PDFInfo
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- CN102737964A CN102737964A CN2012102243738A CN201210224373A CN102737964A CN 102737964 A CN102737964 A CN 102737964A CN 2012102243738 A CN2012102243738 A CN 2012102243738A CN 201210224373 A CN201210224373 A CN 201210224373A CN 102737964 A CN102737964 A CN 102737964A
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CN201210224373.8A CN102737964B (zh) | 2012-07-02 | 2012-07-02 | 一种晶体硅片及其扩散方法 |
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CN201210224373.8A CN102737964B (zh) | 2012-07-02 | 2012-07-02 | 一种晶体硅片及其扩散方法 |
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CN102737964A true CN102737964A (zh) | 2012-10-17 |
CN102737964B CN102737964B (zh) | 2015-02-11 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103400897A (zh) * | 2013-07-30 | 2013-11-20 | 保定天威英利新能源有限公司 | 一种低表面杂质浓度的太阳能电池pn结的制备方法 |
CN103715299A (zh) * | 2013-12-20 | 2014-04-09 | 浙江正泰太阳能科技有限公司 | 一种逆扩散的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008043827A2 (de) * | 2006-10-12 | 2008-04-17 | Centrotherm Photovoltaics Ag | Verfahren zur passivierung von solarzellen |
CN101217170A (zh) * | 2007-12-27 | 2008-07-09 | 北京市太阳能研究所有限公司 | 一种应用于硅太阳能电池的扩散工艺 |
US20080197454A1 (en) * | 2007-02-16 | 2008-08-21 | Calisolar, Inc. | Method and system for removing impurities from low-grade crystalline silicon wafers |
CN102522449A (zh) * | 2011-11-24 | 2012-06-27 | 苏州阿特斯阳光电力科技有限公司 | 一种制备硅太阳能电池的磷扩散方法 |
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- 2012-07-02 CN CN201210224373.8A patent/CN102737964B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008043827A2 (de) * | 2006-10-12 | 2008-04-17 | Centrotherm Photovoltaics Ag | Verfahren zur passivierung von solarzellen |
US20080197454A1 (en) * | 2007-02-16 | 2008-08-21 | Calisolar, Inc. | Method and system for removing impurities from low-grade crystalline silicon wafers |
CN101217170A (zh) * | 2007-12-27 | 2008-07-09 | 北京市太阳能研究所有限公司 | 一种应用于硅太阳能电池的扩散工艺 |
CN102522449A (zh) * | 2011-11-24 | 2012-06-27 | 苏州阿特斯阳光电力科技有限公司 | 一种制备硅太阳能电池的磷扩散方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103400897A (zh) * | 2013-07-30 | 2013-11-20 | 保定天威英利新能源有限公司 | 一种低表面杂质浓度的太阳能电池pn结的制备方法 |
CN103400897B (zh) * | 2013-07-30 | 2016-08-17 | 保定天威英利新能源有限公司 | 一种低表面杂质浓度的太阳能电池pn结的制备方法 |
CN103715299A (zh) * | 2013-12-20 | 2014-04-09 | 浙江正泰太阳能科技有限公司 | 一种逆扩散的方法 |
CN103715299B (zh) * | 2013-12-20 | 2016-07-06 | 浙江正泰太阳能科技有限公司 | 一种逆扩散的方法 |
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CN102737964B (zh) | 2015-02-11 |
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Address after: 215129 Suzhou high tech Zone, Jiangsu Province, Lu Shan Road, No. 199, No. Co-patentee after: Artes sunshine Power Group Co. Ltd. Patentee after: Suzhou Canadian Solar Inc. Address before: 215129 Suzhou high tech Zone, Jiangsu Province, Lu Shan Road, No. 199, No. Co-patentee before: Canadian (China) Investment Co., Ltd. Patentee before: Suzhou Canadian Solar Inc. |
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Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI Cells Co.,Ltd. Patentee after: Atlas sunshine Power Group Co.,Ltd. Address before: 215129 199 deer Road, Suzhou hi tech Development Zone, Jiangsu, Suzhou Patentee before: CSI Cells Co.,Ltd. Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. |
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