CN102736452A - Device and method for near-field alignment of lithography equipment - Google Patents
Device and method for near-field alignment of lithography equipment Download PDFInfo
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- CN102736452A CN102736452A CN2011100862014A CN201110086201A CN102736452A CN 102736452 A CN102736452 A CN 102736452A CN 2011100862014 A CN2011100862014 A CN 2011100862014A CN 201110086201 A CN201110086201 A CN 201110086201A CN 102736452 A CN102736452 A CN 102736452A
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Abstract
The invention discloses a device for near-field alignment of lithography equipment. The device for near-field alignment comprises a lighting source, a workbench, a probe array, a transmission optical fiber, a photoelectric detector, an alignment signal processing module, a quartz resonator, a Z-direction controller, a frequency generator and a current measurement device. The method comprises that a light beam transmitted by the lighting source irradiates an alignment mark on a reference plate or a silicon wafer on the workbench at an angle more than a critical angle from the back; collected near-field information of the alignment mark is coupled with the transmission optical fiber by the probe array in the way of light intensity; an optical intensity signal is transmitted to the photoelectric detector by the transmission optical fiber; the optical intensity signal is transformed into an electrical signal and is amplified by the photoelectric detector; the electrical signal is transmitted to the alignment signal processing module and is subjected to signal processing and an alignment position is computed; a distance between the probe array and the surface of the silicon wafer is measured by the current measurement device; the frequency generator provides fixed-frequency to the quartz resonator; and the distance between the probe array and the surface of the silicon wafer is adjusted by the cooperation between the quartz resonator and the Z-direction controller so that the distance is in a near-field range.
Description
Technical field
The present invention relates to field of lithography, relate in particular to the near field alignment device and the alignment methods that are used for lithographic equipment.
Background technology
Lithographic equipment of the prior art is mainly used in the manufacturing of IC or other microdevices.Through lithographic equipment, the multilayer mask with different mask patterns under accurate alignment case successively exposure image be coated with on the silicon chip of photoresist.Present lithographic equipment is divided into two types substantially; One type is the stepping lithographic equipment; The mask pattern single exposure is imaged on an exposure area of silicon chip, and silicon chip moves with respect to mask subsequently, and next exposure area is moved to mask pattern and projection objective below; Again mask pattern is made public in another exposure area of silicon chip, repeat the picture that this process all exposure areas on silicon chip all have corresponding mask patterns.Another kind of is the step-scan lithographic equipment, and in said process, mask pattern is not single exposure imaging, but the scanning mobile imaging through the projection light field.In the mask pattern imaging process, mask and silicon chip move with respect to optical projection system and projected light beam simultaneously, accomplish silicon wafer exposure.
Critical step is that mask is aimed at silicon chip in the lithographic equipment.After making public on silicon chip, the ground floor mask pattern removes in the slave unit; After the PROCESS FOR TREATMENT that silicon chip is correlated with; Carry out the exposure of second layer mask pattern; But for guarantee second layer mask pattern and subsequently the picture of mask pattern need mask and silicon chip accurately be aimed at respect to the accurate location of exposed mask pattern image on the silicon chip.Because the IC device of photoetching technique manufacturing needs multiexposure, multiple exposure in silicon chip, to form multilayer circuit, for this reason, require to realize the accurate aligning of mask and silicon chip in the lithographic equipment.When characteristic dimension requires more hour, will become strict more to the requirement of alignment precision.
Prior art has two kinds of alignment scheme.A kind of is the TTL technique of alignment that sees through camera lens; Alignment mark on the laser lighting mask images in the silicon chip plane through object lens; Move the silicon chip platform, make the reference marker scanning alignment mark imaging on the silicon chip platform, the light intensity that sampling is simultaneously formed images; Correct alignment position is promptly represented in the largest light intensity position of detector output, and this aligned position is that the position measurement of the laser interferometer that is used for moving monitoring wafer platform position provides zero reference.Another kind is a 0A off-axis alignment technology, is positioned at the reference mark of datum plate on a plurality of alignment marks and the silicon chip platform on the silicon chip platform through the off-axis alignment systematic survey, realizes that silicon chip aims at and silicon chip platform aligning; Reference marker is aimed at mask alignment mark on the silicon chip platform, realizes mask registration; Can obtain the position relation of mask and silicon chip thus, realize mask and silicon chip aligning.
At present, the most alignment so that adopts of main flow lithographic equipment is a grating alignment.Grating alignment is meant that illumination beam on the grating type alignment mark diffraction takes place, and diffraction light carries the full detail about alignment mark structure.The multilevel diffraction light scatters from the phase alignment grating with different angles; After filtering zero order light through spatial filter, gather ± 1 order diffraction light, the raising that perhaps requires along with CD; Gather multi-level diffraction light (comprising senior) simultaneously at the reference surface interference imaging; Utilize picture to scan at certain orientation with reference to grating, survey and signal Processing, confirm the centering adjustment position through photodetector with corresponding.
At the denomination of invention of Dutch ASML company Chinese invention patent CN1506768A for " alignment system and the method that are used for etching system "; Adopted a kind of ATHENA off-axis alignment system of 4f system architecture, this alignment system adopts ruddiness, green glow two-source illumination at the Lights section; And adopt voussoir array or wedge group to realize the overlapping and coherent imaging of alignment mark multi-level diffraction light, and on image planes, imaging space is separated; The registration signal of ruddiness and green glow is separated through a polarization beam splitter prism; See through transmitted light intensity through surveying the alignment mark picture, obtain the registration signal of sinusoidal output with reference to grating.
In this alignment system, alignment precision depends primarily on alignment mark, i.e. the cycle of grating size, and the cycle is more little; Alignment precision is high more in theory, the cycle of grating when aiming at used lighting source wavelength, the needed alignment mark of diffraction equation, i.e. asin θ=n λ; Wherein a is the grating cycle, and θ is the optical grating diffraction angle, and n is that the optical grating diffraction level is inferior, and λ is the lighting source wavelength; Defer to scalar diffraction theory, but when the grating cycle with aim at used lighting source wavelength when suitable (≤5 λ) owing to receive the influence of Vector Diffraction Theory; The energy of optical grating diffraction mainly concentrates on 0 grade, and 0 order diffraction light can not be used for interference imaging, and then can not be used for aiming at.And when the grating cycle further reduced, scalar diffraction theory also was false, and is theoretical because related to the light wave near field this moment, so the method in the above-mentioned patent can not be used for aiming at.
Summary of the invention
In order to address the above problem, the present invention proposes a kind of alignment device, comprise lighting source, work stage, probe array, Transmission Fibers, photodetector, registration signal processing module, and Z is to control module; The light beam that sends from said lighting source; From the said work stage back side; Place datum plate or the alignment mark on the silicon chip on the said work stage with angular illumination greater than critical angle; At the positive near-field information that forms of said alignment mark, the near-field information of the said alignment mark that said probe array will be collected is coupled into said Transmission Fibers with the mode of light intensity, and said Transmission Fibers is transferred to photodetector with light intensity signal; Said photodetector converts light intensity signal into electric signal and amplifies, and is transferred to the calculating that the registration signal processing module is carried out signal Processing and aligned position at last; Utilize the distance of said Z, make said distance be in near-field region to control module adjustment probe array and silicon chip surface.
Wherein, said Transmission Fibers and said probe array are formed one.
Wherein, utilize mirror holder to realize the fixing and location of each assembly.
Wherein, the distance between said probe array and the silicon chip surface is in the near-field region, promptly in a wavelength coverage of alignment light source.
Wherein, monochromatic light or the narrow band light of said lighting source for silicon chip and quartz are seen through.
Wherein, said alignment mark is formed on the work stage datum plate or on the silicon chip.
Wherein, the live width of said alignment mark is less than the illumination light wavelength.
Wherein, said probe array is an one-dimensional array.
Wherein, the number of probes of said probe array is corresponding with the lines quantity of alignment mark.
Wherein, said probe array is a two-dimensional array.
Wherein, the probe of said probe array quantity capable or row are corresponding with the lines quantity of alignment mark.
Wherein, in order to improve efficiency of measurement, detecting probe surface is except that the certain regional clear aperture in tip, and other parts can be plated Al film or other metal films.
Wherein, said probe array makes through chemical corrosion method or photoetching method.
Wherein, said near-field information is to meet the intensity signal that said alignment mark surface topography distributes.
Wherein, said Z comprises that to control module quartz resonator, Z are to controller and frequency generator and current measuring device; Said frequency generator provides fixed frequency to said quartz resonator, and said quartz resonator is along with the change in location of said probe array, and its shearforce changes thereupon; The generation amplitude changes; Form probe current, and be sent to said current measuring device, said current measuring device is according to said probe current; Confirm said probe array and said and distance silicon chip surface, and control said Z and regulate said distance to controller.
The invention allows for the method that aforementioned alignment device is aimed at, may further comprise the steps:
Step 1, silicon chip is delivered to the relevant position of work stage;
Step 2, silicon chip is carried out prealignment, make it get into the alignment mark capture range;
Step 3, the signal that utilizes Z to feed back according to quartz resonator to controller, the spacing between adjustment probe array and the silicon chip mark face makes probe array get into the near field search coverage;
Step 4, through the motion of work stage, utilize alignment device that alignment mark is carried out level to scanning;
Step 5, the intensity that obtains according to scanning and the sweep signal of position relation are calculated aligned position;
The aligned position that step 6, basis calculate moves to the relevant position with work stage, accomplishes and aims at.
Alignment device of the present invention; Utilize the near field theory to carry out position alignment, the light that the lighting source utilization sees through silicon chip is surveyed the device of near-field signals and is made up of probe array; Owing to broken through diffraction limit; Utilize the near field to aim at, can the alignment mark line thickness be dwindled greatly, and then improve alignment precision greatly.Simultaneously, probe manufacturing is become array format, effectively raise capacity usage ratio.
Description of drawings
Shown in Figure 1ly be structural representation according to the alignment device that is used for lithographic equipment of the first embodiment of the present invention;
Shown in Figure 2 is used probe array of alignment device according to the present invention and alignment mark structure synoptic diagram;
Shown in Figure 3 is the used probe array plan structure of alignment device according to the present invention synoptic diagram;
Shown in Figure 4 is the used another kind of probe array plan structure synoptic diagram of alignment device according to the present invention;
Shown in Figure 5 is the used alignment mark plan structure of alignment device synoptic diagram according to the present invention;
Shown in Figure 6 is the structural representation of the alignment device that is used for lithographic equipment according to a second embodiment of the present invention;
Shown in Figure 7 is the registration signal synoptic diagram that produces according to alignment device of the present invention.
Embodiment
Below, describe in detail according to a preferred embodiment of the invention in conjunction with accompanying drawing.For the ease of describing and the outstanding the present invention of demonstration, omitted existing associated components in the prior art in the accompanying drawing, and will omit description these well-known components.
Shown in Figure 1ly be structural representation according to the alignment device that is used for lithographic equipment of first embodiment of the invention.The alignment mark 105 of the light beam 102 that lighting source 101 sends from the back lighting silicon chip 104; Silicon chip 104 utilizes work stage 103 to carry; Probe array 106 is coupled into Transmission Fibers 107 with the alignment mark of collecting 105 near-field informations with the mode of light intensity; Affiliated near-field information at the light intensity signal that alignment mark 105 positive space of planes form, records the distribution characteristics of alignment mark 105 after being the said alignment mark 105 of said light beam 102 irradiations.Transmission Fibers 107 is transferred to photomultiplier 108 with light intensity signal, and light intensity signal is converted into electric signal and amplifies, and is transferred to registration signal processing module 110 at last and carries out the calculating of signal Processing and aligned position.Mirror holder 109 is realized the fixing and location of said modules, and quartz resonator 111 cooperates Z to accomplish alignment device Z to control to controller 113, and frequency generator and current measuring device 112 produce fixed frequency and offer quartz resonator 111; When the distance on probe array 106 and silicon chip 104 surfaces changed, its shearforce changed thereupon, and then the amplitude of modulation quartz resonator 111; The generation electric current changes; Can confirm distance between the two through current measurement, carry out the distance to controller 113 adjustment probe arrays 106 and silicon chip 104 surfaces, make the entering near-field region through Z; So that measure, generally can be controlled between the 0-50nm.
Alignment mark can be made on the silicon chip, can be made on the work stage datum plate equally or on other carriers, aims to accomplish silicon chip.
Said near-field region is light evanescent wave propagation regions normally, refers generally to apart from the zone in wavelength of silicon chip surface.
Shown in Figure 2 is used probe array of alignment device according to the present invention and alignment mark structure synoptic diagram.Illuminating bundle 201 with greater than the α angle of critical angle from the back surface incident to the silicon chip 202; Be distributed with the alignment mark of arranging according to some cycles 203 on the silicon chip 202; Illuminating bundle 201 is surveyed by probe array probe 206 at the evanescent wave that silicon chip 202 upper surfaces (alignment mark 203 zones) produce, and through probe array 204 energy that detects 205 is transmitted.
In order to improve efficiency of measurement, probe 206 surfaces are except that the certain regional clear aperture in tip, and other parts can be plated the Al film.The arrangement mode of probe array and quantity can be confirmed according to the characteristic of alignment mark.
The live width of alignment mark and cycle size are set according to the alignment precision needs, and general live width is less than the illumination light wavelength, and alignment mark also can be arranged not according to the cycle, according to the aligning needs, can arrange according to other modes.
Only listed the probe array and the alignment mark of a direction, another direction orientation therewith is vertical.
Shown in Figure 3 is the used probe array plan structure synoptic diagram of alignment device according to the present invention.Probe is arranged for the one dimension direction, and number of probes is corresponding with alignment mark lines quantity, also can be not corresponding.Probe spacing is corresponding with alignment mark lines spacing, also can be not corresponding.
Shown in Figure 4 is the used another kind of probe array plan structure synoptic diagram of alignment device according to the present invention, and probe is that two-dimensional direction is arranged, and probe spacing is corresponding with alignment mark lines spacing, also can be not corresponding.Probe capable (row) quantity is corresponding with alignment mark lines quantity, also can be not corresponding.
Shown in Figure 5 is the used alignment mark plan structure synoptic diagram of alignment device according to the present invention.
Shown in Figure 6ly be structural representation according to the alignment device that is used for lithographic equipment of second embodiment of the invention.Structure among its structure and Fig. 1 is basic identical; The alignment mark 605 of the light beam 602 that lighting source 601 sends from the back lighting silicon chip 604; Silicon chip 604 utilizes work stage 603 to carry; Probe array 606 is coupled into Transmission Fibers 607 with the alignment mark of collecting 605 near-field informations with the mode of light intensity; Transmission Fibers 607 is transferred to photomultiplier 608 with light intensity signal, and light intensity signal is converted into electric signal and amplifies, and is transferred at last to amplify and registration signal processing module 610 is carried out the calculating of signal Processing and aligned position.Mirror holder 609 is realized the fixing and location of said modules, and quartz resonator 611 cooperates Z to accomplish alignment device Z to control to controller 613, and frequency generator and current measuring device 612 produce fixed frequency and offer quartz resonator 611; When the distance on probe array 606 and silicon chip 604 surfaces changes; Its shearforce changes thereupon, and then the amplitude of modulation quartz resonator 611, can confirm distance between the two through current measurement; Carry out the distance to controller 613 adjustment probe arrays 606 and silicon chip 604 surfaces through Z; Make the entering near-field region,, generally can be controlled between the 0-50nm so that measure.Wherein Transmission Fibers 607 is formed one with probe array 606.
Shown in Figure 7 is the registration signal synoptic diagram that produces according to alignment device of the present invention.Utilize the strength information contrast of light intensity branch to carry out the position and catch, utilize the light intensity branch information that captures to carry out position alignment, wherein P0 point is that the maximum branch's (light intensity maximum position) of light intensity is an aligned position.
Can adopt chemical corrosion method or photoetching method to realize the making of above-mentioned probe array.
According to flow process shown in Figure 8, utilize the alignment methods of above-mentioned alignment device following:
Step 1, silicon chip is delivered to the relevant position of work stage;
Step 2, silicon chip is carried out prealignment, make it get into the alignment mark capture range;
Step 3, the signal that utilizes Z to feed back according to quartz resonator to controller, the spacing between adjustment probe array and the silicon chip mark face makes probe array get into the near field search coverage;
Step 4, through the motion of work stage, utilize alignment device that alignment mark is carried out level to scanning;
Step 5, the intensity that obtains according to scanning and the sweep signal of position relation are calculated aligned position;
The aligned position that step 6, basis calculate moves to the relevant position with work stage, accomplishes and aims at.
Described in this instructions is several kinds of preferred embodiment of the present invention, and above embodiment is only in order to explain technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within scope of the present invention under this invention's idea through the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (16)
1. an alignment device comprises lighting source, work stage, probe array, Transmission Fibers, photodetector, registration signal processing module, and Z is to control module; The light beam that sends from said lighting source; From the said work stage back side; Place datum plate or the alignment mark on the silicon chip on the said work stage with angular illumination greater than critical angle; At the positive near-field information that forms of said alignment mark, the near-field information of the said alignment mark that said probe array will be collected is coupled into said Transmission Fibers with the mode of light intensity, and said Transmission Fibers is transferred to photodetector with light intensity signal; Said photodetector converts light intensity signal into electric signal and amplifies, and is transferred to the calculating that the registration signal processing module is carried out signal Processing and aligned position at last; Utilize the distance of said Z, make said distance be in near-field region to control module adjustment probe array and silicon chip surface.
2. alignment device according to claim 1, wherein, said Transmission Fibers and said probe array are formed one.
3. alignment device according to claim 1 and 2 wherein, utilizes mirror holder to realize the fixing and location of each assembly.
4. alignment device according to claim 3, wherein, the distance between said probe array and the silicon chip surface is in the near-field region, promptly in a wavelength coverage of alignment light source.
5. alignment device according to claim 1, wherein, monochromatic light or the narrow band light of said lighting source for silicon chip and quartz are seen through.
6. alignment device according to claim 1, wherein, said alignment mark is formed on the work stage datum plate or on the silicon chip.
7. alignment device according to claim 1, wherein, the live width of said alignment mark is less than the illumination light wavelength.
8. alignment device according to claim 1, wherein, said probe array is an one-dimensional array.
9. alignment device according to claim 8, wherein, the number of probes of said probe array is corresponding with the lines quantity of alignment mark.
10. alignment device according to claim 1, wherein, said probe array is a two-dimensional array.
11. alignment device according to claim 10, wherein, the probe of said probe array quantity capable or row are corresponding with the lines quantity of alignment mark.
12. alignment device according to claim 1, wherein, detecting probe surface except that the certain regional clear aperture in tip, other part metal lining films.
13. any described alignment device according to Claim 8-12, wherein, said probe array makes through chemical corrosion method or photoetching method.
14. alignment device according to claim 1, wherein, said near-field information is to meet the intensity signal that said alignment mark surface topography distributes.
15. alignment device according to claim 1, wherein, said Z comprises that to control module quartz resonator, Z are to controller and frequency generator and current measuring device; Said frequency generator provides fixed frequency to said quartz resonator, and said quartz resonator is along with the change in location of said probe array, and its shearforce changes thereupon; The generation amplitude changes; Form probe current, and be sent to said current measuring device, said current measuring device is according to said probe current; Confirm said probe array and said and distance silicon chip surface, and control said Z and regulate said distance to controller.
16. one kind is utilized any method that described alignment device is aimed among the claim 1-15, may further comprise the steps:
Step 1, silicon chip is delivered to the relevant position of work stage;
Step 2, silicon chip is carried out prealignment, make it get into the alignment mark capture range;
Step 3, the signal that utilizes Z to feed back according to quartz resonator to controller, the spacing between adjustment probe array and the silicon chip mark face makes probe array get into the near field search coverage;
Step 4, through the motion of work stage, utilize alignment device that alignment mark is carried out level to scanning;
Step 5, the intensity that obtains according to scanning and the sweep signal of position relation are calculated aligned position;
The aligned position that step 6, basis calculate moves to the relevant position with work stage, accomplishes and aims at.
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| CN201110086201.4A CN102736452B (en) | 2011-04-07 | 2011-04-07 | Device and method for near-field alignment of lithography equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112114347A (en) * | 2019-06-21 | 2020-12-22 | 清华大学 | Apparatus and method for manufacturing scintillator detector |
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| CN1433533A (en) * | 1999-11-29 | 2003-07-30 | 布克哈姆技术公共有限公司 | Method and apparatus for aligning crystalline substrate |
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| CN1936711A (en) * | 2006-10-18 | 2007-03-28 | 上海微电子装备有限公司 | Alignment system for photoetching device and stage jointing grating system |
| US20080036839A1 (en) * | 2004-03-17 | 2008-02-14 | Fuji Xerox Co., Ltd. | Ink jet recording method and ink jet recording apparatus |
| WO2011006260A1 (en) * | 2009-07-16 | 2011-01-20 | Hamidreza Alemohammad | Optical fibre sensor and methods of manufacture |
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| CN1433533A (en) * | 1999-11-29 | 2003-07-30 | 布克哈姆技术公共有限公司 | Method and apparatus for aligning crystalline substrate |
| CN1624452A (en) * | 2003-08-25 | 2005-06-08 | 精工电子纳米科技术有限公司 | Scanning probe microscope and scanning method |
| US20080036839A1 (en) * | 2004-03-17 | 2008-02-14 | Fuji Xerox Co., Ltd. | Ink jet recording method and ink jet recording apparatus |
| CN1936711A (en) * | 2006-10-18 | 2007-03-28 | 上海微电子装备有限公司 | Alignment system for photoetching device and stage jointing grating system |
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| CN112114347A (en) * | 2019-06-21 | 2020-12-22 | 清华大学 | Apparatus and method for manufacturing scintillator detector |
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Address after: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai Co-patentee after: Shanghai Micro And High Precision Mechine Engineering Co., Ltd. Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai Co-patentee before: Shanghai Micro And High Precision Mechine Engineering Co., Ltd. Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |
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