CN102736221B - Projection lithography objective lens - Google Patents
Projection lithography objective lens Download PDFInfo
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- CN102736221B CN102736221B CN201110081501.3A CN201110081501A CN102736221B CN 102736221 B CN102736221 B CN 102736221B CN 201110081501 A CN201110081501 A CN 201110081501A CN 102736221 B CN102736221 B CN 102736221B
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Abstract
The invention provides a projection lithography objective lens used for focusing and imaging an image on the object plane onto the image plane. The projection lithography objective lens sequentially comprises the following components from the object plane along the optical axis: a first lens group G11 with a positive focal power, a second lens group G12 with a negative focal power, a third lens group G13 with a positive focal power, and a fourth lens group G14 with a negative focal power. The following relationships are satisfied in the lens groups G11, G12, G13 and G14: the absolute value of a quotient of f2 divided by f1 is greater than 0.09 and less than 0.25, the absolute value of a quotient of f3 divided by f4 is greater than 0.09 and less than 0.25, and the absolute value of a quotient of f3 divided by f2 is greater than 0.90 and less than 1.1, wherein the f1 is the focal length of the first lens group G11, the f2 is the focal length of the second lens group G12, the f3 is the focal length of the third lens group G13, and the f4 is the focal length of the fourth lens group G14. According to the invention, a required micron-sized resolution can be realized by using a simple structure which includes a small number of lenses and does not include a aspheric surface. Moreover, distortion, astigmatism and chromatic aberration in the same view field range can be corrected, and a greater working distance is left for the object space and the image space.
Description
Technical field
The present invention relates to optical technical field, particularly relate to a kind of light projection photoetching objective lens of optical semiconductor engraving device.
Background technology
At present in field of semiconductor processing, the projection optical system demand of micrometer resolution increases day by day.This type of optical system often adopts 1 times of low numerical aperture or close to 1 times of enlargement ratio design.
Chinese patent application 2010101309921 discloses a kind of projection optical system of 1 times of enlargement ratio.This patent uses gh line wave band, and be 18 lens arrangements, comprise 4 aspheric surfaces, difficulty of processing and cost are all higher.
Summary of the invention
The object of the invention is to propose a kind of light projection photoetching objective lens, energy correcting distorted, the curvature of field, astigmatism, axial chromatic aberration, ratio chromatism, and realize the hearts two far away in image space.Use the design of gh line, ensure that enough exposure light intensity simultaneously, structure is simpler, and operating distance is larger, greatly reduces difficulty of processing and cost.
A kind of light projection photoetching objective lens of the present invention, the image focal imaging of object plane in image planes, comprises successively along optical axis from object plane: a first lens combination G11 with positive light coke; The one second lens combination G12 with negative power; One the 3rd lens combination G13 with positive light coke; And the 4th lens combination G14 that has a negative power; Wherein, described lens combination G11, G12, G13, G14 meet following relation:
0.09＜|f
2/f
1|＜0.25
0.09＜|f
3/f
4|＜0.25
0.90＜|f
3/f
2|＜1.1
Wherein: f
1: the focal length of the first lens combination G11; f
2: the focal length of the second lens combination G12; f
3: the focal length of the 3rd lens combination G13; f
4: the focal length of the 4th lens combination G14.
More preferably, described first lens combination G11 is made up of four lens, and focal power is respectively negative, negative, positive, just; Described second lens combination G12 is made up of three lens, and focal power is followed successively by negative, positive, just; Described 3rd lens combination G13 is made up of three lens, and focal power is followed successively by negative, positive, just; Described 4th lens combination G14 is made up of four lens, and focal power is followed successively by negative, negative, positive, just.
More preferably, first lens 11 of described first lens combination G11 are concave-concave formula negative lens; Second lens 12 are the negative lens of concave surface towards the bent moon formula of object plane; 3rd lens 13 bend towards the positive lens of the bent moon formula of object plane for concave surface; 4th lens 14 are double-convex type positive lens; First lens 15 of described second lens combination G12 are concave-concave formula negative lens, and the second lens 16, the 3rd lens 17 are positive lens; First lens 18, second lens 19 of described 3rd lens combination G13 are positive lens; 3rd lens 20 are concave-concave formula negative lens; First lens 21 of described 4th lens combination G14 are double-convex type positive lens; Second lens 22 are the positive lens of concave surface towards the bent moon formula of image planes; 3rd lens 23 bend towards the negative lens of the bent moon formula of image planes for concave surface; 4th lens 24 are concave-concave formula negative lens.
Closer, lens material Abbe number meets following relation:
0.50＜V
11/V
12＜0.87 (4)
0.40＜V
13/V
12＜0.75 (5)
0.35＜V
15/V
16＜0.58 (6)
0.80＜V
16/V
17＜1.25 (7)
Wherein: V
11: the Abbe number of the first lens combination first lens 11; V
12: the Abbe number of the first lens combination second lens 12; V
13: the Abbe number of the first lens combination the 3rd lens 13; V
15: the Abbe number of the second lens combination first lens 15; V
16: the Abbe number of the second lens combination second lens 16; V
17: the Abbe number of the second lens combination the 3rd lens 17.
More preferably, described lens use at least two kinds high chromatic dispersion materials, and Abbe number is less than 45.
More preferably, described lens use at least two kinds low chromatic dispersion materials, and Abbe number is greater than 60.
More preferably, described lens use at least three kinds low chromatic dispersion materials, and Abbe number is greater than 60.
Wherein, described light projection photoetching objective lens has the maximum numerical aperture of 0.2 or less, and enlargement ratio is not less than 0.8 times, is not more than 1.2 times.
The present invention, with the eyeglass of lesser amt, does not comprise aspheric simple structure, can realize required micron-sized resolution, and corrects distortion in equal field range, astigmatism, aberration, for object space and image space leave larger operating distance.
Accompanying drawing explanation
Can be further understood by following detailed Description Of The Invention and institute's accompanying drawings about the advantages and spirit of the present invention.
Figure 1 shows that light projection photoetching objective lens optical texture schematic diagram of the present invention;
Figure 2 shows that light projection photoetching objective lens distortion curve figure of the present invention;
Figure 3 shows that light projection photoetching objective lens object space of the present invention and image space innermost being line chart far away;
Figure 4 shows that light projection photoetching objective lens of the present invention difference curve.
Embodiment
Specific embodiments of the invention are described in detail below in conjunction with accompanying drawing.
As shown in Figure 1, photoetching projection objective lens 10 number of lenses of the present invention is 14, and each parameter request is as shown in table 1.
Table 1
As shown in Figure 1, photoetching projection objective lens 10 is 14 chip architectures, is all sphere.Be divided into four lens combination G11, G12, G13, G14, focal power is followed successively by positive and negative, positive and negative.
The relational expression of lens combination G11, G12, G13, G14 establishes the basis of object lens picture element optimization further.
0.09＜|f
2/f
1|＜0.25 (1)
0.09＜|f
3/f
4|＜0.25 (2)
0.9＜|f
3/f
2|＜1.1 (3)
0.50＜V
11/V
12＜0.87 (4)
0.40＜V
13/V
12＜0.75 (5)
0.35＜V
15/V
16＜0.58 (6)
0.80＜V
16/V
17＜1.25 (7)
Wherein: f
g1: the focal length of the first lens combination G11; f
2: the focal length of the second lens combination G12; f
3: the focal length of the 3rd lens combination G13; f
4: the focal length of the 4th lens combination G14; V
11: the Abbe number V of the first lens combination first lens 11
12: the Abbe number V of the first lens combination second lens 12
13: the Abbe number V of the first lens combination the 3rd lens 13
15: the Abbe number of the second lens combination first lens 15; V
16: the Abbe number of the second lens combination second lens 16; V
17: the Abbe number of the second lens combination the 3rd lens 17.
Relational expression (1)-(7) define the structural relation of lens combination G11, G12, G13, G14 and lens corrects aberrations thereof.
First lens combination G11 is made up of four lens 11,12,13,14, and focal power is respectively negative, negative, positive, just.First lens 11 are concave-concave formula negative lens, and the second lens 12 are the negative lens of concave surface towards the bent moon formula of object plane R, and the 3rd lens 13 bend towards the positive lens of the bent moon formula of object plane R for concave surface, and the 4th lens 14 are double-convex type positive lens.
Second lens combination G12 is made up of three lens 15,16,17, and focal power is followed successively by negative, positive, just.First lens 15 are concave-concave formula negative lens, and second, third lens 16,17 are positive lens.
3rd lens combination G13 is made up of three lens 18,19,20, and focal power is followed successively by negative, positive, just.First, second lens 18,19 are positive lens, and the 3rd lens 20 are concave-concave formula negative lens.
4th lens combination G14 is made up of four lens 21,22,23,24, and focal power is followed successively by negative, negative, positive, just.First lens 21 are double-convex type positive lens, and the second lens 22 are the positive lens of concave surface towards the bent moon formula of image planes W, and the 3rd lens 23 bend towards the negative lens of the bent moon formula of image planes W for concave surface, the 4th lens 24 are concave-concave formula negative lens.
Said lens at least can use two kinds of high chromatic dispersion materials, also at least can use two kinds of low chromatic dispersion materials, or at least uses three kinds of low chromatic dispersion materials.Wherein said high chromatic dispersion material, refers to the material that Abbe number is less than 45; Described low chromatic dispersion material, refers to the material that Abbe number is greater than 60.In the present embodiment, the material composition of each lens is specially: lens 11 are made up of high chromatic dispersion material, and lens 12 are made up of low chromatic dispersion material, and lens 13,14 are made up of high chromatic dispersion material.Lens 15 are made up of high chromatic dispersion material, and lens 16,17 are made up of low chromatic dispersion material.Lens 18,19 are made up of low chromatic dispersion material, and lens 20 are made up of high chromatic dispersion material.Lens 21,22 are made up of high chromatic dispersion material, and lens 23 are made up of low chromatic dispersion material, and lens 24 are made up of high chromatic dispersion material.
Table 2 gives the specific design value of photoetching projection objective lens of the present invention, and positive radius value represents center of curvature the right on surface, and negative radius value represents the left side of the center of curvature on surface.Interval between optic thickness or two optical elements is distance to the axle on next surface.All dimensional units are all millimeters.
In table 2, " S# " presentation surface is numbered, and " STOP " represents aperture diaphragm AS, and in radius item, " INF " represents infinitely great.
Table 2
Fig. 2 shows that light projection photoetching objective lens of the present invention distortion is good.
Fig. 3 shows that light projection photoetching objective lens object space of the present invention and the image space heart far away are all less than 5mrad.
It is better that aberration curve in Fig. 4 shows that the picture element of light projection photoetching objective lens of the present invention corrects situation, achieves the good picture element within the scope of gh line spectrum.
The attainable maximum numerical aperture of the present invention is 0.2 or less.
The attainable enlargement ratio of the present invention is 1 times or close to 1 times; And enlargement ratio is not less than 0.8, enlargement ratio is not more than 1.2.
Just preferred embodiment of the present invention described in this instructions, above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art, all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (6)
1. a light projection photoetching objective lens, the image focal imaging of object plane in image planes, comprises successively along optical axis from object plane:
The one first lens combination G11 with positive light coke; The one second lens combination G12 with negative power; One the 3rd lens combination G13 with positive light coke; And the 4th lens combination G14 that has a negative power;
Wherein, described lens combination G11, G12, G13, G14 meet following relation:
0.09＜|f
2/f
1|＜0.25
0.09＜|f
3/f
4|＜0.25
0.90＜|f
3/f
2|＜1.1
Wherein: f
1: the focal length of the first lens combination G11; f
2: the focal length of the second lens combination G12; f
3: the focal length of the 3rd lens combination G13; f
4: the focal length of the 4th lens combination G14;
Described first lens combination G11 is made up of four lens, and focal power is respectively negative, negative, positive, just;
Described second lens combination G12 is made up of three lens, and focal power is followed successively by negative, positive, just;
Described 3rd lens combination G13 is made up of three lens, and focal power is followed successively by negative, positive, just;
Described 4th lens combination G14 is made up of four lens, and focal power is followed successively by negative, negative, positive, just;
First lens 11 of described first lens combination G11 are concave-concave formula negative lens; Second lens 12 are the negative lens of concave surface towards the bent moon formula of object plane; 3rd lens 13 bend towards the positive lens of the bent moon formula of object plane for concave surface; 4th lens 14 are double-convex type positive lens;
First lens 15 of described second lens combination G12 are concave-concave formula negative lens, and the second lens 16, the 3rd lens 17 are positive lens;
First lens 18, second lens 19 of described 3rd lens combination G13 are positive lens; 3rd lens 20 are concave-concave formula negative lens;
First lens 21 of described 4th lens combination G14 are double-convex type positive lens; Second lens 22 are the positive lens of concave surface towards the bent moon formula of image planes; 3rd lens 23 bend towards the negative lens of the bent moon formula of image planes for concave surface; 4th lens 24 are concave-concave formula negative lens.
2. light projection photoetching objective lens as claimed in claim 1, wherein, lens material Abbe number meets following relation:
0.50＜V
11/V
12＜0.87 (4)
0.40＜V
13/V
12＜0.75 (5)
0.35＜V
15/V
16＜0.58 (6)
0.80＜V
16/V
17＜1.25 (7)
Wherein: V
11: the Abbe number of the first lens combination first lens 11; V
12: the Abbe number of the first lens combination second lens 12; V
13: the Abbe number of the first lens combination the 3rd lens 13; V
15: the Abbe number of the second lens combination first lens 15; V
16: the Abbe number of the second lens combination second lens 16; V
17: the Abbe number of the second lens combination the 3rd lens 17.
3. light projection photoetching objective lens as claimed in claim 2, comprise at least two kinds high chromatic dispersion materials in all lens of wherein said light projection photoetching objective lens, Abbe number is less than 45.
4. light projection photoetching objective lens as claimed in claim 2, comprise at least two kinds low chromatic dispersion materials in all lens of wherein said light projection photoetching objective lens, Abbe number is greater than 60.
5. light projection photoetching objective lens as claimed in claim 2, comprise at least three kinds low chromatic dispersion materials in all lens of wherein said light projection photoetching objective lens, Abbe number is greater than 60.
6. light projection photoetching objective lens as claimed in claim 1, wherein said light projection photoetching objective lens has the maximum numerical aperture of 0.2 or less, and enlargement ratio is not less than 0.8 times, is not more than 1.2 times.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110081501.3A CN102736221B (en) | 2011-03-31 | 2011-03-31 | Projection lithography objective lens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110081501.3A CN102736221B (en) | 2011-03-31 | 2011-03-31 | Projection lithography objective lens |
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| Publication Number | Publication Date |
|---|---|
| CN102736221A CN102736221A (en) | 2012-10-17 |
| CN102736221B true CN102736221B (en) | 2015-02-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110081501.3A Active CN102736221B (en) | 2011-03-31 | 2011-03-31 | Projection lithography objective lens |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103941380B (en) * | 2014-03-23 | 2016-03-30 | 浙江舜宇光学有限公司 | A kind of miniature imaging camera lens |
| CN104238092B (en) * | 2014-10-14 | 2017-06-13 | 中国科学院光电技术研究所 | Projection objective lens for desktop STEPPER photoetching machine |
| CN109634058B (en) * | 2017-10-09 | 2020-08-04 | 上海微电子装备（集团）股份有限公司 | Optical lens system, exposure apparatus, exposure method, and device manufacturing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6043938A (en) * | 1997-12-05 | 2000-03-28 | Olympus Optical Co., Ltd. | Vari-focal lens system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10115788A (en) * | 1996-10-09 | 1998-05-06 | Olympus Optical Co Ltd | Hard mirror optical system |
| JP4337067B2 (en) * | 1999-03-31 | 2009-09-30 | 株式会社ニコン | Zoom optical system, and exposure apparatus and exposure method provided with the zoom optical system |
| JP4352289B2 (en) * | 1999-10-08 | 2009-10-28 | ソニー株式会社 | Zoom lens and image conversion apparatus |
| JP5335626B2 (en) * | 2009-09-03 | 2013-11-06 | 富士フイルム株式会社 | Projection variable focus lens and projection display device |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6043938A (en) * | 1997-12-05 | 2000-03-28 | Olympus Optical Co., Ltd. | Vari-focal lens system |
Non-Patent Citations (4)
| Title |
|---|
| JP特开2000-284176A 2000.10.13 * |
| JP特开2001-108899A 2001.04.20 * |
| JP特开2011-53513A 2011.03.17 * |
| JP特开平10-115788A 1998.05.06 * |
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Address after: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |