CN102732965A - Lithium niobate substrate and manufacturing method thereof - Google Patents
Lithium niobate substrate and manufacturing method thereof Download PDFInfo
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- CN102732965A CN102732965A CN2012102322392A CN201210232239A CN102732965A CN 102732965 A CN102732965 A CN 102732965A CN 2012102322392 A CN2012102322392 A CN 2012102322392A CN 201210232239 A CN201210232239 A CN 201210232239A CN 102732965 A CN102732965 A CN 102732965A
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Abstract
The invention provides a manufacturing method of a lithium niobate substrate, wherein lithium niobate crystals grow to form the lithium niobate substrate, and photorefractive elements are doped in a growth process of the lithium niobate crystals. The invention further provides a lithium niobate substrate. The lithium niobate substrate is formed by growing the lithium niobate crystals. The lithium niobate substrate is the substrate doped with the photorefractive elements in the growth process of the lithium niobate crystals. The lithium niobate substrate is used for preparing LED (light emitting diode) chips to reduce defect density in epitaxial materials and production cost of LED, thereby effectively increasing luminance of LED, and quickening application of LED in the general lighting field.
Description
Technical field
The invention belongs to the LED manufacturing process technology field, relate in particular to a kind of lithium niobate substrate and method of manufacture thereof.
Background technology
Since the basic LED commercialization of early 1990s GaN (gan); Development through twenties years; It is ripe and perfect that the structure of GaN base LED has been tending towards, but it is very few to can be used for the substrate material of GaN base LED, can be used for business-like substrate material less very few especially.At present; Usually adopt two kinds of substrate materials of sapphire and silit on the market; Wherein sapphire material chemicalstability is good owing to having, production technology relatively advantage such as maturation use the most extensive; But also there are a lot of problems as the substrate of GaN base LED with sapphire material; At first sapphire material exists lattice mismatch and thermal stresses mismatch, and described lattice mismatch and thermal stresses mismatch not only can produce a large amount of defectives in epitaxial material, but also increases extra difficulty can for the processing of subsequent device; Secondly the heat conductivility of sapphire material is also not so good; And derive for the heat that led chip is produced passes through Sapphire Substrate; Usually need the thickness of Sapphire Substrate be thinned to 100um with interior (certain by 400-500um; Another purpose to the saphire substrate material attenuate is the convenience for follow-up cutting) because the hardness of Sapphire Substrate but is only second to diamond, this shortcoming has increased the time cost and the money cost of reduction process undoubtedly greatly; Have again; In recent years in order to meet the challenge of LED luminosity, expand the Application Areas of LED to the general illumination field, need produce various patterned Sapphire Substrate (Patterned Sapphire Substrate; PSS) or photonic crystal; And on the Sapphire Substrate of higher hardness, make described PSS substrate or photonic crystal, and need expensive equipment, increased difficulty and cost undoubtedly.
At present, can prepare conical patterned Sapphire Substrate through existing photoetching and etching technics and improve the LED luminosity.If the light extraction efficiency of conical graphic sapphire substrate (after epoxy encapsulation) adopts ray-tracing software Tracepro simulation with the variation relation at conical base angle; Can obtain Fig. 1; Can find out if conical bottom surface diameter Dc is fixed as 3um by Fig. 1; Conical base angle θ c is 55 when spending, and the light extraction efficiency of chip is the highest; If when conical bottom surface diameter Dc is fixed as other size (in the 10um), also can obtain essentially identical result.Therefore; The cone shape that the light extraction efficiency of the conical graphic sapphire substrate that simulates with ray-tracing software Tracepro is the highest is as shown in Figure 2; Wherein conical bottom surface diameter Dc is not a key parameter; Conical base angle θ c is only the most important parameter that influences light extraction efficiency, and promptly the interface direction of Sapphire Substrate and GaN epitaxial material and useful area are only the key that influences light extraction efficiency.Therefore; If do not consider the difficulty of processing of pictorial pattern prepared on the Sapphire Substrate and the difficulty of subsequent growth extension; What the cone that has base angle θ c so on the Sapphire Substrate and be 55 degree was The more the better, cone is arranged is close more good more, and perfect condition is that the bottom surface of cone and cone is tangent.Yet; Because the working accuracy of existing photoetching and etching technics is limited, has limited to process the too little cone shape of size, and if cone arrange too close; Follow-up with regard to the stable epitaxial growth plane of none, this will bring very large difficulty to epitaxy.Therefore; The graphic sapphire substrate major part that just causes existing on the market is all as shown in Figure 3, and the size of figure can not be too little, is about 1.5um like height hc; Bottom surface diameter Dc is about 2.5um; Spacing between figure and the figure is approximately 0.5um, and promptly θ c in base angle is about 50 degree, this big limitations patterned substrate improve the effect of brightness.
Therefore, make the problems referred to above that the LED substrate is brought, be badly in need of proposing the manufacturing that a kind of new substrate is used for led chip for solving present current material.
Summary of the invention
The purpose of this invention is to provide a kind of lithium niobate substrate and method of manufacture thereof, can be under the prerequisite of not doing patterned substrate or photonic crystal, with lithium niobate crystals as the LED substrate, so that improve the problem of the luminosity of LED.
For addressing the above problem, the method for manufacture of a kind of lithium niobate substrate that the present invention proposes, the employing Crystal Growth of Lithium Niobate is a lithium niobate substrate, in the process of said Crystal Growth of Lithium Niobate, mixes light and sells off element.
Further, to sell off element be in iron, copper, manganese, the cerium one or more to said light.
Further, adopt the multi-beam laser interferometric method, utilize coherent laser beam to shine said lithium niobate substrate, the surface of said lithium niobate substrate is carried out the modulation of specific refractory power.
Further, the light beam form of the laser beam of said multi-beam laser interferometric method employing is plane wave or spherical wave or cylindrical wave.
Further, said multi-beam laser interferometric method adopts the laser beam more than two to interfere each other.
Further, utilize said coherent laser beam one or many to shine said lithium niobate substrate, irradiation time is 10 seconds-10 minutes.
Further, the surface of said lithium niobate substrate has periodically variable specific refractory power, and said periodically changed is an one dimension periodicity, or is multidimensional periodicity.
Further, the said periodically variable change of refractive cycle is by the angle between said coherent laser beam decision, and when angle is big more, the cycle is more little; When angle is more little, the cycle is big more.
Further, the angle between the said coherent laser beam is greater than 0 degree and less than 180 degree.
Further, said lithium niobate substrate has an even surface.
Further, said lithium niobate substrate surface has patterned structure.
For addressing the above problem, a kind of lithium niobate substrate that the present invention also proposes, said lithium niobate substrate are through the lithium niobate crystals formation of growing, and said lithium niobate substrate is in the process of the growth of said lithium niobate crystals, to mix the substrate that light is sold off element.
Further, to sell off element be in iron, copper, manganese, the cerium one or more to said light.
Further, the surface of said lithium niobate substrate has periodically variable specific refractory power, and said periodically changed is an one dimension periodicity, or is multidimensional periodicity.
Further, said lithium niobate substrate has an even surface.
Further, said lithium niobate substrate surface has patterned structure.
Visible by technique scheme, the present invention and tradition are compared through the technology for preparing patterned Sapphire Substrate and improve the luminosity of LED, and lithium niobate substrate disclosed by the invention and method of manufacture thereof have the advantage of following several respects:
At first, on the lithium niobate crystals material is selected, the one, (Lithium Niobate, LiNbO3) crystal is that a kind of current collection light, acousto-optic, piezoelectricity, ferroelectric and light such as sell off at effect universal artificial-synthetic crystal to Lithium niobium trioxide.Lithium niobate crystals is compared with sapphire; The crystalline network and the thermal expansivity of the crystalline network of lithium niobate crystals material and thermal expansivity and GaN epitaxial material more mate; With the substrate of lithium niobate crystals as LED, can reduce the defect concentration in the epitaxial material, the 2nd, though the hardness of lithium niobate crystals is lower than sapphire; But its hardness can satisfy the process window in the chip manufacture process; Also can reduce the difficulty of subsequent device processing, can reduce the time cost and the money cost of attenuate operation, the 3rd, lithium niobate crystals is a kind of multifunctional material; Especially implementing can demonstrate different physical propertys after the different doping, is the crystal that the photonics performance is maximum, overall target is best that present people find.We can utilize these physical propertys, and the technology that substitutes original complicacy through simple technology obtains identical or better effect, and perhaps we can utilize these physical propertys to make LED obtain using more widely.
Secondly, improve on the method for LED luminosity, have the specific refractory power that the light that mixed is sold off lithium niobate substrate element, that be used to prepare led chip through the modulation of multi-beam laser interferometric method; Improve the luminosity of LED, method provided by the present invention more simply, is more practiced thrift, more environmental protection, and fabrication cycle is shorter to be because need not photoetching and etching technics; Only just can accomplish through simple illumination operation; Therefore, also need not photoresist material, need not process gas that etching apparatus and etching use, stripping liquid of the usefulness that need not to remove photoresist, acetone, alcohol etc., both practiced thrift equipment cost; Practiced thrift human cost again, fabrication cycle has also just shortened naturally.
At last; On the effect that improves the LED luminosity; Because the specific refractory power that the surface of material different forms is different, and the light that mixed provided by the present invention is sold off element and surface refractive index becomes periodically variable lithium niobate substrate, is equivalent to the surface and has multiple material different; Differing materials all can form scattering or diffuse-reflectance at the interface to light wave, improve the luminosity of LED with this.Scattering or the diffuse-reflectance interface that is to say lithium niobate substrate material provided by the present invention than the scattering of patterned Sapphire Substrate or diffuse-reflectance interface Duo many, so its effect that improves the luminosity of LED can be better than patterned Sapphire Substrate.Moreover, the surface of lithium niobate substrate provided by the present invention is smooth, need not consider that the cycle of its variations in refractive index can increase extra difficulty to subsequent epitaxial growth.
Description of drawings
Fig. 1 is the graphic representation of the light extraction efficiency of the conical graphic sapphire substrate that simulates with ray-tracing software Tracepro in the prior art with the variation at conical base angle;
Fig. 2 is the highest cone shape of light extraction efficiency of the conical graphic sapphire substrate that simulates with ray-tracing software Tracepro in the prior art;
Fig. 3 is the graphic sapphire substrat structure synoptic diagram that prior art is made;
Fig. 4 is that lithium niobate substrate of the present invention is used four beam interference synoptic diagram;
Fig. 5 is a two-beam interference light distribution synoptic diagram in another embodiment of the present invention;
Fig. 6 is a two-beam interference light distribution synoptic diagram in further embodiment of this invention.
Fig. 7 is four beam interference light distribution synoptic diagram in one embodiment of the invention;
Fig. 8 is a lithium niobate crystals surface refractive index period profile synoptic diagram of the present invention;
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
In conjunction with accompanying drawing 4 to 8, a kind of manufacture craft of method of manufacture of lithium niobate substrate is described in detail.
At first; One lithium niobate substrate 1 that become by Crystal Growth of Lithium Niobate is provided, and the light that in the process of its growth, mixed is sold off element, and adulterated said light is sold off element can be in iron, copper, manganese, the cerium one or more; Formation has the lithium niobate substrate of photorefractive effect; Said photorefractive effect is meant when receiving illumination that its specific refractory power can receive the spatial modulation of light intensity, produces and the corresponding index distribution of light intensity spatial distribution.Said lithium niobate substrate can have an even surface, and also can have patterned structure.Preferably, said lithium niobate substrate is for having an even surface.The said lithium niobate substrate 1 that the light that mixed is sold off element is used for subsequent technique and prepares led chip.
Because the crystalline network of lithium niobate crystals material and the crystalline network and the thermal expansivity of thermal expansivity and GaN epitaxial material more mate; Can reduce the defect concentration in the epitaxial material; And the hardness ratio sapphire of lithium niobate crystals is low, can reduce the time cost and the money cost of attenuate operation; Also having lithium niobate crystals is a kind of multifunctional material; When lithium niobate crystals is implemented can demonstrate different physical propertys after the different doping; Like photorefractive effect, ferroelectric effect etc.; We can utilize these physical propertys, and the technology that substitutes original complicacy through simple technology obtains identical or better effect, and perhaps we can utilize these physical propertys to make LED obtain using more widely.
Secondly; Adopt the multi-beam laser interferometric method; Utilize coherent laser beam to shine said lithium niobate substrate, said multi-beam laser interferometric method adopts the laser beam more than two to interfere each other at least, promptly can be two-beam interference, three beam interferences, four beam interferences, five beam interferences; Even can be multiple-beam interference more, and the light intensity of every laser beam can be adjusted.The present invention is that example is carried out detail analysis with four beam interference synoptic diagram as shown in Figure 4, and it is longitudinal direction that light beam 1 intersects the in-plane that forms with light beam 22, and it is transverse direction that light beam 33 intersects the in-plane that forms with light beam 44.Light beam 1 is coherent light beams with light beam 22, and the angle between said light beam 1 and the light beam 22 is 25 degree; Light beam 33 is coherent light beams with light beam 44, and the angle between said light beam 33 and the light beam 44 is 25 degree.The light beam form of described light beam 1, light beam 22, light beam 33, light beam 44 is directional light (being plane wave); The light beam form can also be spherical wave or cylindrical wave; Different light beam (said different light beam is meant that the coherent laser beam number that said multi-beam laser interferometric method adopts is different, the angle difference between the coherent laser beam or/and the light intensity of different and every laser beam of light beam form is different) can produce different spatial light intensities and distribute, but all should belong to category of the present invention.
[embodiment one]
If light beam as shown in Figure 41, light beam 22 are opened simultaneously; Light beam 33, light beam 44 are closed simultaneously, and owing to light beam 1, light beam 22 are coherent laser beam, and the angle between the coherent laser beam is 25 degree; And adjust the light intensity of every laser beam; Then the overlapping region at described twin-beam can produce the spatial light intensity distribution, and said spatial light intensity distributes vertical with described light beam 1 and the light beam 22 crossing planes that form, and presents periodically changed; The periodically changed here is one dimension periodicity, and is as shown in Figure 5.Described light beam 1, light beam 22 expand restraints the collimated beam that becomes to be fit to said lithium niobate substrate size; Said lithium niobate substrate is positioned over the overlapping region of twin-beam; Double beams laser shines said lithium niobate substrate for some time (10sec-10min) simultaneously to interfere; Light is sold off element because said lithium niobate substrate has been mixed; So the periodically variable spatial light intensity distribution that has as shown in Figure 5 goes to shine said lithium niobate substrate, will have new periodically variable specific refractory power on the surface of said lithium niobate substrate.
[embodiment two]
If light beam as shown in Figure 433, light beam 44 are opened simultaneously; Light beam 1, light beam 22 are closed simultaneously, and owing to light beam 33, light beam 44 are coherent laser beam, and the angle between the coherent laser beam is 25 degree; And adjust the light intensity of every laser beam; Then the overlapping region at described twin-beam can produce the spatial light intensity distribution, and said spatial light intensity distributes vertical with described light beam 33 and the light beam 44 crossing planes that form, and presents periodically changed; The periodically changed here also is one dimension periodicity, and is as shown in Figure 6.Described light beam 33, light beam 44 expand restraints the collimated beam that becomes to be fit to said lithium niobate substrate size; Said lithium niobate substrate is positioned over the overlapping region of twin-beam; Double beams laser shines said lithium niobate substrate for some time (10sec-10min) simultaneously to interfere; Light is sold off element because said lithium niobate substrate has been mixed; So as shown in Figure 6 have periodically variable spatial light intensity distribution and can go to shine said lithium niobate substrate, will have another new periodically variable specific refractory power on the surface of said lithium niobate substrate.
[embodiment three]
If light beam as shown in Figure 41, light beam 22, light beam 33, light beam 44 are opened simultaneously, owing to light beam 1, light beam 22 are coherent laser beam, light beam 33 is a coherent laser beam with light beam 44; And the angle between the coherent laser beam is 25 degree; And adjust the light intensity of every laser beam, then the overlapping region at described four bundle light can produce the spatial light intensity distribution, and the distribution of said spatial light intensity presents periodically changed; The periodically changed here is bidimensional periodicity, and is as shown in Figure 7.Described light beam 1, light beam 22, light beam 33, light beam 44 expand restraints the collimated beam that becomes to be fit to said lithium niobate substrate size; Said lithium niobate substrate is positioned over the overlapping region of four light beams; Four bundle laser shine said lithium niobate substrate for some time (10sec-10min) simultaneously to interfere; Light is sold off element because said lithium niobate substrate has been mixed; So the periodically variable spatial light intensity distribution that has as shown in Figure 7 goes to shine said lithium niobate substrate; Will have periodically variable specific refractory power as shown in Figure 8 in the formation of the surface of said lithium niobate substrate, need to prove the gray-scale value representative luminance value among Fig. 8, the specific refractory power that the different gray values representative is different.
Can know that by above embodiment one to embodiment three the actual process requirement of the led chip that the size of said lithium niobate substrate can go out according to subsequent preparation is 2 cun, 4 cun, 6 cun, 8 cun and other suitable size etc.
Angle between the said coherent laser beam not only can be 25 degree; Also can for greater than 0 the degree and less than 180 the degree arbitrarily angled; According to the difference of the angle between the coherent laser beam, also can change in the surperficial formed periodically variable change of refractive cycle of lithium niobate substrate, the angle of promptly working as between the said coherent laser beam is more little; Cycle bigger (size at the interface of approximate 55 degree of the illusion that promptly forms is big more, and the number at the interface of approximate 55 degree of the illusion that then forms is few more); Angle between said coherent laser beam is big more, the cycle more little (size at the interface of approximate 55 degree of the illusion that promptly forms is more little, and the number at the interface of approximate 55 degree of the illusion that then forms is more).And said lithium niobate substrate to have periodically variable specific refractory power be continually varying in each cycle, when the peak of the light intensity of said coherent laser beam is big more, then the change of refractive scope in each cycle is big more; When the light intensity of said coherent laser beam is one regularly; The angle of said coherent laser beam is big more; Specific refractory power continually varying scope in each cycle is constant, but but diminishes in the surperficial formed periodically variable change of refractive cycle of lithium niobate substrate.Therefore; The angle through adjusting said coherent laser beam and the size of light intensity; Especially the light intensity when said coherent laser beam is a timing, can confirm the periodically variable change of refractive cycle that the surface of said lithium niobate substrate has through the angle of adjusting said coherent laser beam.
In addition; Can know by above embodiment one to embodiment three; The periodically changed that the surface forms of said lithium niobate substrate can be one dimension periodicity; Maybe can be bidimensional, along with the light beam that said lithium niobate substrate is shone is many more, the periodically changed that the surface forms of said lithium niobate substrate also can be multidimensional periodicity.Said one dimension periodically can be the periodically changed of horizontal direction, also can be the periodically changed of vertical direction, can also be the periodically changed of any direction.Said bidimensional periodically can be periodically changed for level and vertical direction simultaneously, also can oppositely be periodically changed simultaneously for any two.Said multidimensional periodically can oppositely be periodically changed for any at least three simultaneously.
In order better to adjust the specific refractory power of said lithium niobate substrate, utilize said coherent laser beam to carry out once irradiating to said lithium niobate substrate, also can be for repeatedly irradiation, until making said lithium niobate substrate have the periodic distribution of needed specific refractory power.
The method of manufacture of a kind of lithium niobate substrate that proposes based on the present invention, light is sold off element because lithium niobate substrate has been mixed, and utilizes the said lithium niobate substrate after the light that mixed is sold off element; Through the multi-beam laser interferometric method, utilize coherent laser beam irradiation lithium niobate substrate, adjust the specific refractory power of said lithium niobate substrate; So that the surface of said lithium niobate substrate has the specific refractory power of periodic distribution, be used for the manufacturing of led chip with this lithium niobate substrate that surface is had a specific refractory power of periodic distribution, improve the luminosity of LED; Said method more simply, is more practiced thrift, more environmental protection, and fabrication cycle is shorter, need not photoetching and etching technics; Only just can accomplish through simple illumination operation; Therefore, also need not photoresist material, need not process gas that etching apparatus and etching use, stripping liquid of the usefulness that need not to remove photoresist, acetone, alcohol etc., both practiced thrift equipment cost; Practiced thrift human cost again, fabrication cycle has also just shortened naturally.
In addition; The method of manufacture that the present invention is based on described lithium niobate substrate also proposes a kind of lithium niobate substrate; Be used to prepare the substrate of led chip; At first, said lithium niobate substrate forms through the growth lithium niobate crystals, and said lithium niobate substrate is in the process of the growth of said lithium niobate crystals, to mix the substrate that light is sold off element; Secondly; The said lithium niobate substrate that the light that mixed is sold off element has the specific refractory power of periodic distribution; Therefore between said lithium niobate substrate and extension, can form the interface of approximate 55 degree of countless a plurality of illusions; In fact the surface of said lithium niobate substrate but is smooth, owing to the surperficial formed periodically variable specific refractory power in said lithium niobate substrate but is a continually varying in each cycle, that is to say; Be equivalent to different interfaces between the different refractivity; Interface and junction, interface can form scattering or diffuse-reflectance to light wave, can improve the luminosity of LED through scattering of light and diffuse-reflectance not doing patterned substrate or photonic crystal and can not increasing under the prerequisite of additional difficulty to epitaxy.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting claim; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (16)
1. the method for manufacture of a lithium niobate substrate is characterized in that, the employing Crystal Growth of Lithium Niobate is a lithium niobate substrate, in the process of said Crystal Growth of Lithium Niobate, mixes light and sells off element.
2. the method for manufacture of lithium niobate substrate as claimed in claim 1 is characterized in that, it is in iron, copper, manganese, the cerium one or more that said light is sold off element.
3. the method for manufacture of lithium niobate substrate as claimed in claim 1 is characterized in that, adopts the multi-beam laser interferometric method, utilizes coherent laser beam to shine said lithium niobate substrate, the surface of said lithium niobate substrate is carried out the modulation of specific refractory power.
4. the method for manufacture of lithium niobate substrate as claimed in claim 3 is characterized in that, the light beam form of the laser beam that said multi-beam laser interferometric method adopts is plane wave or spherical wave or cylindrical wave.
5. like the method for manufacture of claim 3 or 4 described lithium niobate substrate, it is characterized in that said multi-beam laser interferometric method adopts the laser beam more than two to interfere each other.
6. the method for manufacture of lithium niobate substrate as claimed in claim 3 is characterized in that, utilizes said coherent laser beam one or many to shine said lithium niobate substrate, and irradiation time is 10 seconds-10 minutes.
7. the method for manufacture of lithium niobate substrate as claimed in claim 3 is characterized in that, the surface of said lithium niobate substrate has periodically variable specific refractory power, and said periodically changed is an one dimension periodicity, or is multidimensional periodicity.
8. the method for manufacture of lithium niobate substrate as claimed in claim 7 is characterized in that, the said periodically variable change of refractive cycle is by the angle between said coherent laser beam decision, and when angle is big more, the cycle is more little; When angle is more little, the cycle is big more.
9. the method for manufacture of lithium niobate substrate as claimed in claim 8 is characterized in that, the angle between the said coherent laser beam is greater than 0 degree and less than 180 degree.
10. the method for manufacture of lithium niobate substrate as claimed in claim 1 is characterized in that, said lithium niobate substrate has an even surface.
11. the method for manufacture of lithium niobate substrate as claimed in claim 1 is characterized in that, said lithium niobate substrate surface has patterned structure.
12. a lithium niobate substrate is characterized in that, said lithium niobate substrate forms through the growth lithium niobate crystals, and said lithium niobate substrate is in the process of the growth of said lithium niobate crystals, to mix the substrate that light is sold off element.
13. lithium niobate substrate as claimed in claim 12 is characterized in that, it is in iron, copper, manganese, the cerium one or more that said light is sold off element.
14. lithium niobate substrate as claimed in claim 12 is characterized in that, the surface of said lithium niobate substrate has periodically variable specific refractory power, and said periodically changed is an one dimension periodicity, or is multidimensional periodicity.
15. lithium niobate substrate as claimed in claim 12 is characterized in that, said lithium niobate substrate has an even surface.
16. lithium niobate substrate as claimed in claim 12 is characterized in that, said lithium niobate substrate surface has patterned structure.
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Cited By (1)
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| CN107930711A (en) * | 2017-12-07 | 2018-04-20 | 河北工业大学 | A kind of light that lithium niobate chip is cut based on Y triggers microlayer model directed transport method |
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| CN107930711A (en) * | 2017-12-07 | 2018-04-20 | 河北工业大学 | A kind of light that lithium niobate chip is cut based on Y triggers microlayer model directed transport method |
| CN107930711B (en) * | 2017-12-07 | 2020-10-02 | 河北工业大学 | Light-triggered micro-droplet directional transportation method based on Y-cut lithium niobate chip |
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