CN102723666B - Semiconductor laser module device and control method thereof - Google Patents
Semiconductor laser module device and control method thereof Download PDFInfo
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- CN102723666B CN102723666B CN201210135886.1A CN201210135886A CN102723666B CN 102723666 B CN102723666 B CN 102723666B CN 201210135886 A CN201210135886 A CN 201210135886A CN 102723666 B CN102723666 B CN 102723666B
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- semiconductor laser
- laser
- module device
- spectrum
- semiconductor
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Abstract
The invention provides a kind of semiconductor laser module device, this semiconductor laser module device comprises multiple semiconductor laser, multiple semiconductor laser is used for the mutually different laser of output wavelength, and the spectrum that multiple semiconductor laser is set to the laser of at least two outputs in described multiple semiconductor laser can be overlapping with the laser of the spectrum obtaining having predetermined distribution.Described semiconductor laser module device can obtain the spectrum of any wavelength of predetermined distribution by selecting different semiconductor lasers in wider scope, overcomes that single semiconductor laser output wavelength scope is little, the uncontrollable shortcoming of spectral shape.In addition, present invention also offers a kind of control method of above-mentioned semiconductor laser module device.
Description
Technical field
The present invention relates to laser field, particularly a kind of semiconductor laser module device.In addition, the invention still further relates to a kind of control method of above-mentioned semiconductor laser module device.
Background technology
Semiconductor laser technology is the focus of laser technology research in recent years, semiconductor laser can be applied to the fields such as laser acquisition, illumination and spectrographic detection independently on the one hand, and semiconductor laser can as the pumping source of other solid state lasers on the other hand.But, the wavelength of the laser that existing semiconductor laser can export is subject to the restriction of himself character, although the centre wavelength of exported laser can be regulated by changing working temperature, but the adjustable range of the centre wavelength of laser smaller (generally can not more than 10nm), is difficult to Output of laser in wider spectral region.And the spectral shape exported due to single semiconductor laser can not arbitrarily change, and can not adapt to multiduty applied environment.
Summary of the invention
The present invention one of is intended to solve the problems of the technologies described above at least to a certain extent or at least provides a kind of useful business to select.
For this reason, one object of the present invention be to propose a kind of can in wider spectral region the semiconductor laser module device of the laser that output spectrum shape is variable.
Another object of the present invention is the control method proposing a kind of above-mentioned semiconductor laser module device.
According to an aspect of the embodiment of the present invention, a kind of semiconductor laser module device is provided, this semiconductor laser module device comprises multiple semiconductor laser, described multiple semiconductor laser is used for the mutually different laser of output wavelength, and the spectrum that described multiple semiconductor laser is set to the laser of at least two outputs in described multiple semiconductor laser can be overlapping with the laser of the spectrum obtaining having predetermined distribution.
According to the abovementioned embodiments of the present invention, the multiple semiconductor lasers for the mutually different laser of output wavelength are provided with in semiconductor laser module device.So, user just can select corresponding at least two semiconductor lasers according to predetermined spectrum from described multiple semiconductor laser, thus by making the overlapping laser obtaining the spectrum of predetermined distribution of spectrum of the laser of at least two selected semiconductor lasers outputs.Described semiconductor laser module device can obtain the spectrum of any wavelength of predetermined distribution by selecting different semiconductor lasers in wider scope, overcomes that single semiconductor laser output wavelength scope is little, the uncontrollable shortcoming of spectral shape.
In addition, semiconductor laser module device according to the above embodiment of the present invention can also have following additional technical characteristic:
According to one embodiment of present invention, the pass between the optical maser wavelength that any two semiconductor lasers that in described multiple semiconductor laser, output wavelength connects recently export is:
λ
i<λ
i+1<λ
i+Δλ
i/2
Wherein, λ
irepresent the optical maser wavelength that i-th semiconductor laser in described any two described semiconductor lasers exports, Δ λ
irepresent the spectral width of the laser that described i-th semiconductor laser exports, λ
i+1represent the wavelength of the laser that the i-th+1 semiconductor laser in described any two semiconductor lasers exports.
According to one embodiment of present invention, the wavelength of the laser of described semiconductor laser output is 0.3 μm ~ 30 μm.
According to one embodiment of present invention, described multiple semiconductor laser is encapsulated in a semiconductor laser packaging.
According to one embodiment of present invention, the working temperature of multiple described semiconductor laser is identical.
According to one embodiment of present invention, described semiconductor laser module device also comprises temperature controller, and described temperature controller is for controlling the working temperature of described semiconductor laser.
According to one embodiment of present invention, described semiconductor laser module device also comprises optical coupling element, and the laser that described optical coupling element exports at least two semiconductor lasers described in being coupled is overlapping with the spectrum of the laser that at least two semiconductor lasers described in making export.
According to one embodiment of present invention, described optical coupling element is prism, lens, optical fiber or guide-lighting cone.
According to one embodiment of present invention, described semiconductor laser module device also comprises controller, and described controller is used for controlling corresponding semiconductor laser work in described multiple semiconductor laser according to the spectrum of described predetermined distribution.
According to the another aspect of the embodiment of the present invention, provide a kind of control method of above-mentioned semiconductor laser module device, this control method comprises the corresponding semiconductor laser work controlling predetermined quantity in described multiple semiconductor laser according to required spectrum.
According to the abovementioned embodiments of the present invention, user can select the corresponding semiconductor laser of predetermined quantity from described multiple semiconductor laser according to predetermined spectrum, thus by making the overlapping laser obtaining the spectrum of predetermined distribution of spectrum of the laser of selected semiconductor laser output.Utilize the control method of above-mentioned semiconductor laser module device, the spectrum of any wavelength of continuous distribution can be obtained in wider scope.
Additional aspect of the present invention and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage will become obvious and easy understand from accompanying drawing below combining to the description of embodiment, wherein:
Fig. 1 is the schematic diagram of the spectrum of the laser that each semiconductor laser in the semiconductor laser module device that provides of embodiments of the invention and this semiconductor laser module device exports when working independently.
Fig. 2 is the operating state of the semiconductor laser module device that embodiments of the invention provide and the schematic diagram of the spectrum of laser that obtains under this operating state.
Fig. 3 is the schematic diagram representing the wave-length coverage of the laser that the semiconductor laser module device that the embodiment of the present invention provides exports and the laser of single semiconductor laser output.
Symbol description:
LD
1, LD
2, LD
3lD
nsemiconductor laser
LD
i, LD
jsemiconductor laser
LD
x, LD
y, LD
zsemiconductor laser
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Be exemplary below by the embodiment be described with reference to the drawings, be intended to for explaining the present invention, and can not limitation of the present invention be interpreted as.
In describing the invention, it will be appreciated that, term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ", " thickness ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " clockwise ", orientation or the position relationship of the instruction such as " counterclockwise " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore limitation of the present invention can not be interpreted as.
In addition, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance or imply the quantity indicating indicated technical characteristic.Thus, be limited with " first ", the feature of " second " can express or impliedly comprise one or more these features.In describing the invention, except as otherwise noted, the implication of " multiple " is two or more, unless otherwise clear and definite restriction.
In the present invention, unless otherwise clearly defined and limited, the term such as term " installation ", " being connected ", " connection ", " fixing " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, above-mentioned term concrete meaning in the present invention can be understood as the case may be.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or D score can comprise the first and second features and directly contact, also can comprise the first and second features and not be directly contact but by the other characterisation contact between them.And, fisrt feature second feature " on ", " top " and " above " comprise fisrt feature directly over second feature and oblique upper, or only represent that fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " below " and " below " comprise fisrt feature directly over second feature and oblique upper, or only represent that fisrt feature level height is less than second feature.
Fig. 1 to Fig. 3 shows semiconductor laser module device in the embodiment of the present invention, the operating state of this semiconductor laser module device and corresponding spectrum.
As shown in Figure 1 to Figure 3, The embodiment provides a kind of semiconductor laser module device, this semiconductor laser module device comprises the multiple semiconductor laser LD for the mutually different laser of output wavelength
1, LD
2, LD
3lD
n, and multiple semiconductor laser LD
1, LD
2, LD
3lD
nbe set to multiple semiconductor laser LD
1, LD
2, LD
3lD
nin at least two spectrum of laser exported can be overlapping with the laser obtaining the spectrum with predetermined distribution.
According to the abovementioned embodiments of the present invention, the multiple semiconductor laser LD for the mutually different laser of output wavelength are provided with in semiconductor laser module device
1, LD
2, LD
3lD
n.So, user just can according to predetermined spectrum from multiple semiconductor laser LD
1, LD
2, LD
3lD
ncorresponding at least two semiconductor lasers of middle selection, thus by making the overlapping laser obtaining the spectrum of predetermined distribution of spectrum of the laser of at least two selected semiconductor lasers outputs.Semiconductor laser module device in above-described embodiment can obtain the spectrum of any wavelength of continuous distribution by selecting different semiconductor lasers in wider scope, overcomes that single semiconductor laser output wavelength scope is little, the immutable shortcoming of spectral shape.
Hereinafter with reference to accompanying drawing, embodiments of the present invention is described in detail.
Fig. 1 is the schematic diagram of the spectrum of the laser that each semiconductor laser in the semiconductor laser module device that provides of embodiments of the invention and this semiconductor laser module device exports when working independently.
As shown in Figure 1, the semiconductor laser module device in the embodiment of the present invention has multiple semiconductor laser LD
1, LD
2, LD
3lD
n, multiple semiconductor laser LD
1, LD
2, LD
3lD
nbe packaged into a module, composition storehouse.Further, multiple semiconductor laser LD
1, LD
2, LD
3lD
nthe wavelength of the laser exported is different, and the spectral region of the laser exported is adjacent.
In the semiconductor laser module device of the embodiment of the present invention, multiple semiconductor laser LD
1, LD
2, LD
3lD
ncan be encapsulated in semiconductor laser packaging (namely for the housing parts of holding semiconductor laser), to reduce the size of the modular device after encapsulating.Further, selectively, multiple semiconductor laser LD
1, LD
2, LD
3lD
nin each all can have independently semiconductor laser packaging.
As everyone knows, the working temperature of semiconductor laser can affect the wavelength of the laser that semiconductor laser exports, and usually needs to control the working temperature of semiconductor in the course of work of semiconductor laser.Therefore, in an embodiment of the present invention, can also be semiconductor laser set temperature controller (not shown), thus control the working temperature of semiconductor laser by this temperature controller.Further, in an embodiment of the present invention, multiple semiconductor laser LD
1, LD
2, LD
3lD
npreferably work under identical working temperature, to control working temperature.
In addition, in order to obtain larger spectral output ranges, preferably by multiple semiconductor laser LD
1, LD
2, LD
3lD
nthe wavelength of laser exported is arranged in a larger scope, as 0.3 μm ~ 30 μm or wider.
Further, in one embodiment of the invention, multiple semiconductor laser LD
1, LD
2, LD
3lD
nfollowing relation is met between the optical maser wavelength that any two semiconductor lasers that middle output wavelength connects recently export:
λ
i<λ
i+1<λ
i+Δλ
i/2
Wherein, λ
irepresent the optical maser wavelength that i-th semiconductor laser in any two semiconductor lasers exports, Δ λ
irepresent the spectral width of the laser that i-th laser exports, λ
i+1represent the wavelength of the laser that the i-th+1 laser in any two lasers exports.
So, multiple laser LD can just be guaranteed
1, LD
2, LD
3lD
nthe spectrum of the laser that any two lasers that middle output wavelength connects recently export all has mutually overlapping composition and can mutually superpose.
In addition, the semiconductor laser module device in the embodiment of the present invention can also be provided with optical coupling element (not shown).So, just can utilize the laser coupled that at least two semiconductor lasers export by optical coupling element, the spectrum of the laser exported to make above-mentioned at least two semiconductor lasers is overlapping, the spectrum needed for generation.
Above-mentioned optical coupling element can be various element usually used in this field, as long as can realize its function.Such as, in an embodiment of the present invention, such as prism, lens, optical fiber and guide-lighting cone etc. can be used as above-mentioned optical coupling element.
In addition, from multiple semiconductor laser LD
1, LD
2, LD
3lD
nthe method of the predetermined semiconductor laser of middle selection also can have multiple.Such as, user can manually select as required and control semiconductor laser, to obtain predetermined spectrum.For another example, controller can also be set for the semiconductor laser module device in the embodiment of the present invention, thus by this controller automatically from multiple semiconductor laser LD
1, LD
2, LD
3lD
nthe semiconductor laser that middle selection is predetermined also controls selected semiconductor laser, to obtain predetermined spectrum.
Fig. 2 is two specific works states of the semiconductor laser module device that embodiments of the invention provide and the schematic diagram of the spectrum of laser that obtains under this operating state.
As shown in Figure 2, wherein under an operating state, user needs the wavelength control of laser at λ
i+j, and in various semiconductor laser known in the art, all can not meet the demands separately through any one semiconductor laser work.Now, user can select and wavelength X
i+jtwo corresponding semiconductor laser LD
i, LD
jwork simultaneously, and the spectrum lambda by exporting
iand λ
jcombination obtains target optical spectrum λ
i+j.
In the other operative state, user needs the wavelength control of laser at λ
x+y+z, and in various semiconductor laser known in the art, all can not meet the demands separately through any one semiconductor laser work.Now, user can select and wavelength X
x+y+zthree corresponding semiconductor laser LD
x, LD
y, LD
zwork simultaneously, and the spectrum lambda by exporting
x, λ
xand λ
zcombination obtains target optical spectrum λ
x+y+z.
Fig. 3 is the schematic diagram representing the wave-length coverage of the laser that the semiconductor laser module device that the embodiment of the present invention provides exports and the laser of single semiconductor laser output.As shown in Figure 3, the scope of output wavelength greatly can be expanded by the semiconductor laser module device of the embodiment of the present invention.
Although situation about working for the semiconductor laser of at least two in semiconductor laser module device is above illustrated simultaneously, but should be appreciated that, when the some semiconductor lasers in semiconductor laser module device work independently the laser that just can export required wavelength, also corresponding semiconductor laser Output of laser can be utilized separately.
In addition, except above-mentioned semiconductor laser module device, embodiments of the invention additionally provide a kind of control method of above-mentioned semiconductor laser module device, and this control method comprises and controls multiple semiconductor laser LD according to required spectrum
1, LD
2, LD
3lD
nthe step of the corresponding semiconductor laser work of middle predetermined quantity.
According to the abovementioned embodiments of the present invention, user can according to predetermined spectrum from multiple semiconductor laser LD
1, LD
2, LD
3lD
nthe corresponding semiconductor laser of middle selection predetermined quantity, thus by making the overlapping laser obtaining the spectrum of predetermined distribution of spectrum of the laser of selected semiconductor laser output.Utilizing the control method of above-mentioned semiconductor laser module device, the spectrum of any wavelength of continuous distribution can be obtained by selecting different semiconductor lasers in wider scope.
In the description of this specification, specific features, structure, material or feature that the description of reference term " example ", " concrete example ", " some examples ", " embodiment " or " some embodiments " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and describe embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, those of ordinary skill in the art can change above-described embodiment within the scope of the invention when not departing from principle of the present invention and aim, revising, replacing and modification.
Claims (8)
1. a semiconductor laser module device, is characterized in that, comprising:
Multiple semiconductor laser, described multiple semiconductor laser is used for the mutually different laser of output wavelength, and the spectrum that described multiple semiconductor laser is set to the laser of at least two outputs in described multiple semiconductor laser can be overlapping with the laser of the spectrum obtaining having predetermined distribution;
Optical coupling element, the laser that described optical coupling element exports at least two semiconductor lasers described in being coupled is overlapping with the spectrum of the laser that at least two semiconductor lasers described in making export,
Wherein, the pass between the optical maser wavelength that any two semiconductor lasers that in described multiple semiconductor laser, output wavelength connects recently export is:
λi<λi+1<λi+Δλi/2
Wherein, λ i represents the optical maser wavelength that i-th semiconductor laser in described any two described semiconductor lasers exports, Δ λ i represents the spectral width of the laser that described i-th semiconductor laser exports, and λ i+1 represents the wavelength of the laser that the i-th+1 semiconductor laser in described any two semiconductor lasers exports.
2. semiconductor laser module device according to claim 1, is characterized in that, the wavelength of the laser that described semiconductor laser exports is 0.3 μm ~ 30 μm.
3. semiconductor laser module device according to claim 1, is characterized in that, described multiple semiconductor laser is encapsulated in a semiconductor laser packaging.
4. semiconductor laser module device according to claim 1, is characterized in that, the working temperature of multiple described semiconductor laser is identical.
5. semiconductor laser module device according to claim 1, is characterized in that, also comprises:
Temperature controller, described temperature controller is for controlling the working temperature of described semiconductor laser.
6. semiconductor laser module device according to claim 1, is characterized in that, described optical coupling element is prism, lens, optical fiber or guide-lighting cone.
7. semiconductor laser module device according to claim 1, is characterized in that, also comprises:
Controller, described controller is used for controlling corresponding semiconductor laser work in described multiple semiconductor laser according to the spectrum of described predetermined distribution.
8. a control method for the semiconductor laser module device according to any one of claim 1-7, is characterized in that, comprises the corresponding semiconductor laser work controlling predetermined quantity in described multiple semiconductor laser according to required spectrum.
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| CN201210135886.1A CN102723666B (en) | 2012-05-03 | 2012-05-03 | Semiconductor laser module device and control method thereof |
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|---|---|---|---|
| CN201210135886.1A CN102723666B (en) | 2012-05-03 | 2012-05-03 | Semiconductor laser module device and control method thereof |
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| CN102723666B true CN102723666B (en) | 2016-01-20 |
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| CN108267917A (en) * | 2016-12-30 | 2018-07-10 | 深圳市光峰光电技术有限公司 | laser light source and projection device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6775308B2 (en) * | 2001-06-29 | 2004-08-10 | Xanoptix, Inc. | Multi-wavelength semiconductor laser arrays and applications thereof |
| CN201004529Y (en) * | 2007-01-30 | 2008-01-09 | 上海幻晟光电科技有限公司 | Optical coupler for high power semiconductor laser |
| CN101350498A (en) * | 2007-07-20 | 2009-01-21 | 优迪那半导体有限公司 | Method of controlling semiconductor laser |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4771784B2 (en) * | 2005-10-25 | 2011-09-14 | 日本電信電話株式会社 | Optical transmitter and optical transmission method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6775308B2 (en) * | 2001-06-29 | 2004-08-10 | Xanoptix, Inc. | Multi-wavelength semiconductor laser arrays and applications thereof |
| CN201004529Y (en) * | 2007-01-30 | 2008-01-09 | 上海幻晟光电科技有限公司 | Optical coupler for high power semiconductor laser |
| CN101350498A (en) * | 2007-07-20 | 2009-01-21 | 优迪那半导体有限公司 | Method of controlling semiconductor laser |
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