CN102723666A - Semiconductor laser module device and method for controlling same - Google Patents
Semiconductor laser module device and method for controlling same Download PDFInfo
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- CN102723666A CN102723666A CN2012101358861A CN201210135886A CN102723666A CN 102723666 A CN102723666 A CN 102723666A CN 2012101358861 A CN2012101358861 A CN 2012101358861A CN 201210135886 A CN201210135886 A CN 201210135886A CN 102723666 A CN102723666 A CN 102723666A
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- semiconductor laser
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Abstract
The invention provides a semiconductor laser module device. The semiconductor laser module device comprises a plurality of semiconductor lasers, wherein a plurality of semiconductor lasers are used for outputting laser light with different output wavelengths; and spectra of at least two beams of output laser light in a plurality of semiconductor lasers can be overlapped to obtain the laser light with the spectra in preset distribution. The semiconductor laser module device has the advantages that by selecting different semiconductor lasers, the spectra which are in preset distribution and have random wavelengths can be obtained in a wide range, and the defects of small output wavelength range of a single semiconductor laser and non-adjustability in spectrum shape are overcome. Moreover, the invention also provides a method for controlling the semiconductor laser module device.
Description
Technical field
The present invention relates to laser field, particularly a kind of semiconductor laser module device.In addition, the invention still further relates to a kind of control method of above-mentioned semiconductor laser module device.
Background technology
Semiconductor laser technology is the focus of laser technology research in recent years; Semiconductor laser can be applied to fields such as laser acquisition, illumination and spectrographic detection independently on the one hand, and semiconductor laser can be used as the pumping source of other solid state lasers on the other hand.Yet; The Wavelength of Laser that the conventional semiconductor laser can be exported receives the restriction of himself character; Though can be through changing the centre wavelength that working temperature is regulated the laser of being exported; But the adjustable range of the centre wavelength of laser smaller (generally can not surpass 10nm) is difficult in the spectral region than broad, export laser.And, can not adapt to multiduty applied environment because the spectral shape of single semiconductor laser output can not arbitrarily change.
Summary of the invention
The present invention one of is intended to solve the problems of the technologies described above at least to a certain extent or provides a kind of useful commerce to select at least.
For this reason, one object of the present invention be to propose a kind of can be in than the spectral region of broad the semiconductor laser module device of the laser of output spectrum shape variable.
Another object of the present invention is to propose a kind of control method of above-mentioned semiconductor laser module device.
An aspect according to the embodiment of the invention; A kind of semiconductor laser module device is provided; This semiconductor laser module device comprises a plurality of semiconductor lasers; Said a plurality of semiconductor laser is used for the mutually different laser of output wavelength, and said a plurality of semiconductor laser spectrum of being set to the laser of at least two outputs in said a plurality of semiconductor laser can overlap with the laser of the spectrum that obtains having predetermined distribution.
According to the abovementioned embodiments of the present invention, be provided with a plurality of semiconductor lasers that are used for the mutually different laser of output wavelength in the semiconductor laser module device.So; The user just can select at least two semiconductor lasers accordingly according to predetermined spectrum from said a plurality of semiconductor lasers, the laser of the spectrum that obtains predetermined distribution thereby the spectrum of the laser through making selected at least two semiconductor lasers output overlaps.Said semiconductor laser module device can obtain the spectrum of any wavelength of predetermined distribution through selecting different semiconductor lasers in the scope than broad, overcome little, the uncontrollable shortcoming of spectral shape of single semiconductor laser output wavelength scope.
In addition, semiconductor laser module device according to the above embodiment of the present invention can also have following additional technical characterictic:
Relation between the optical maser wavelength of any two semiconductor lasers output that according to one embodiment of present invention, output wavelength connects recently in said a plurality of semiconductor laser is:
λ
i<λ
i+1<λ
i+Δλ
i/2
Wherein, λ
iThe optical maser wavelength of representing i semiconductor laser output in said any two said semiconductor lasers, Δ λ
iThe spectral width of representing the laser of said i semiconductor laser output, λ
I+1The Wavelength of Laser of representing i+1 semiconductor laser output in said any two semiconductor lasers.
According to one embodiment of present invention, the Wavelength of Laser of said semiconductor laser output is 0.3 μ m～30 μ m.
According to one embodiment of present invention, said a plurality of semiconductor laser is encapsulated in the semiconductor laser packing.
According to one embodiment of present invention, the working temperature of a plurality of said semiconductor lasers is identical.
According to one embodiment of present invention, said semiconductor laser module device also comprises temperature controller, and said temperature controller is used to control the working temperature of said semiconductor laser.
According to one embodiment of present invention; Said semiconductor laser module device also comprises optical coupling element, said optical coupling element be used to be coupled said at least two semiconductor lasers output laser so that the spectrum of the laser of said at least two semiconductor lasers output overlap.
According to one embodiment of present invention, said optical coupling element is prism, lens, optical fiber or leaded light awl.
According to one embodiment of present invention, said semiconductor laser module device also comprises controller, and said controller is used for controlling the corresponding semiconductor laser work of said a plurality of semiconductor laser according to the spectrum of said predetermined distribution.
According to the embodiment of the invention on the other hand, a kind of control method of above-mentioned semiconductor laser module device is provided, this control method comprises the corresponding semiconductor laser work of controlling predetermined quantity in said a plurality of semiconductor laser according to required spectrum.
According to the abovementioned embodiments of the present invention; The user can select the corresponding semiconductor laser of predetermined quantity according to predetermined spectrum from said a plurality of semiconductor lasers, the laser of the spectrum that obtains predetermined distribution thereby the spectrum of the laser through making selected semiconductor laser output overlaps.Utilize the control method of above-mentioned semiconductor laser module device, can in scope, obtain the spectrum of any wavelength of continuous distribution than broad.
Additional aspect of the present invention and advantage part in the following description provide, and part will become obviously from the following description, or recognize through practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously with easily understanding becoming the description of embodiment in conjunction with figs, wherein:
Fig. 1 is the sketch map of the semiconductor laser module device that provides of embodiments of the invention and each semiconductor laser in this semiconductor laser module device spectrum of the laser of output when working independently.
Fig. 2 be the operating state of the semiconductor laser module device that provides of embodiments of the invention and under this operating state the sketch map of the spectrum of resulting laser.
Fig. 3 is the sketch map of laser of Wavelength of Laser scope and the output of single semiconductor laser of the semiconductor laser module device output that provides of the expression embodiment of the invention.
Symbol description:
LD
1, LD
2, LD
3LD
nSemiconductor laser
LD
i, LD
jSemiconductor laser
LD
x, LD
y, LD
zSemiconductor laser
Embodiment
Describe embodiments of the invention below in detail, the example of said embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Be exemplary through the embodiment that is described with reference to the drawings below, be intended to be used to explain the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention; It will be appreciated that; The orientation of indications such as term " " center ", " vertically ", " laterally ", " length ", " width ", " thickness ", " on ", D score, " preceding ", " back ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " clockwise ", " counterclockwise " or position relation are for based on orientation shown in the drawings or position relation; only be to describe with simplifying for the ease of describing the present invention; rather than the device or the element of indication or hint indication must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as limitation of the present invention.
In addition, term " first ", " second " only are used to describe purpose, and can not be interpreted as indication or hint relative importance or the implicit quantity that indicates indicated technical characterictic.Thus, one or more a plurality of these characteristics can be shown or impliedly comprised to the characteristic that is limited with " first ", " second " clearly.In description of the invention, except as otherwise noted, the implication of " a plurality of " is two or more, only if clear and definite qualification is arranged in addition.
In the present invention, only if clear and definite regulation and qualification are arranged in addition, broad understanding should be done in terms such as term " installation ", " linking to each other ", " connection ", " fixing ", for example, can be to be fixedly connected, and also can be to removably connect, or connect integratedly; Can be mechanical connection, also can be to be electrically connected; Can be directly to link to each other, also can link to each other indirectly through intermediary, can be the connection of two element internals.For those of ordinary skill in the art, can understand above-mentioned term concrete implication in the present invention as the case may be.
In the present invention; Only if clear and definite regulation and qualification are arranged in addition; First characteristic second characteristic it " on " or D score can comprise that first and second characteristics directly contact, can comprise that also first and second characteristics are not directly contacts but through the contact of the additional features between them.And, first characteristic second characteristic " on ", " top " and " above " comprise first characteristic directly over second characteristic and oblique upper, or only represent that the first characteristic level height is higher than second characteristic.First characteristic second characteristic " under ", " below " and " below " comprise first characteristic directly over second characteristic and oblique upper, or only represent that the first characteristic level height is less than second characteristic.
Fig. 1 to Fig. 3 shows the semiconductor laser module device in the embodiment of the invention, the operating state and the corresponding spectrum of this semiconductor laser module device.
To shown in Figure 3, embodiments of the invention provide a kind of semiconductor laser module device like Fig. 1, and this semiconductor laser module device comprises a plurality of semiconductor laser LD that are used for the mutually different laser of output wavelength
1, LD
2, LD
3LD
n, and a plurality of semiconductor laser LD
1, LD
2, LD
3LD
nBe set to a plurality of semiconductor laser LD
1, LD
2, LD
3LD
nIn the spectrum of laser of at least two outputs can overlap with the laser of the spectrum that obtains having predetermined distribution.
According to the abovementioned embodiments of the present invention, be provided with a plurality of semiconductor laser LD that are used for the mutually different laser of output wavelength in the semiconductor laser module device
1, LD
2, LD
3LD
nSo, the user just can be according to predetermined spectrum and from a plurality of semiconductor laser LD
1, LD
2, LD
3LD
nIn select at least two semiconductor lasers accordingly, the laser of the spectrum that obtains predetermined distribution thereby the spectrum of the laser through making selected at least two semiconductor lasers output overlaps.Semiconductor laser module device in the foregoing description can obtain the spectrum of any wavelength of continuous distribution through selecting different semiconductor lasers in the scope than broad, overcome little, the immutable shortcoming of spectral shape of single semiconductor laser output wavelength scope.
Below will be described in detail embodiments of the invention with reference to accompanying drawing.
Fig. 1 is the sketch map of the semiconductor laser module device that provides of embodiments of the invention and each semiconductor laser in this semiconductor laser module device spectrum of the laser of output when working independently.
As shown in Figure 1, the semiconductor laser module device in the embodiment of the invention has a plurality of semiconductor laser LD
1, LD
2, LD
3LD
n, a plurality of semiconductor laser LD
1, LD
2, LD
3LD
nBe packaged into a module, form storehouse.And, a plurality of semiconductor laser LD
1, LD
2, LD
3LD
nThe Wavelength of Laser of output is different, and the spectral region of the laser of output is adjacent.
In the semiconductor laser module device of the embodiment of the invention, a plurality of semiconductor laser LD
1, LD
2, LD
3LD
nCan be encapsulated in semiconductor laser packing (housing parts that promptly is used for the holding semiconductor laser), with the size of the modular device after reducing to encapsulate.And, selectively, a plurality of semiconductor laser LD
1, LD
2, LD
3LD
nIn each all can have independently the semiconductor laser packing.
As everyone knows, the working temperature of semiconductor laser can influence the Wavelength of Laser of semiconductor laser output, in the course of work of semiconductor laser, usually need control semi-conductive working temperature.Therefore, in an embodiment of the present invention, can also temperature controller (not shown) be set, thereby control the working temperature of semiconductor laser through this temperature controller for semiconductor laser.And, in an embodiment of the present invention, a plurality of semiconductor laser LD
1, LD
2, LD
3LD
nPreferably under identical working temperature, work, so that working temperature is controlled.
In addition, in order to obtain bigger spectrum output area, preferably with a plurality of semiconductor laser LD
1, LD
2, LD
3LD
nThe Wavelength of Laser of output is arranged in the bigger scope, like 0.3 μ m～30 μ m or wideer.
And, in one embodiment of the invention, a plurality of semiconductor laser LD
1, LD
2, LD
3LD
nSatisfy following relation between the optical maser wavelength of any two semiconductor lasers output that middle output wavelength connects recently:
λ
i<λ
i+1<λ
i+Δλ
i/2
Wherein, λ
iThe optical maser wavelength of representing i semiconductor laser output in any two semiconductor lasers, Δ λ
iThe spectral width of representing the laser of i laser output, λ
I+1The Wavelength of Laser of representing i+1 laser output in any two lasers.
So, just can guarantee a plurality of laser LD
1, LD
2, LD
3LD
nIn the spectrum of laser of any two lasers output of connecing recently of output wavelength all have mutual overlapping composition and can mutual superposition.
In addition, the semiconductor laser module device in the embodiment of the invention can also be provided with optical coupling element (not shown).So, just can utilize the laser coupled of optical coupling element,, produce required spectrum so that the spectrum of the laser of above-mentioned at least two semiconductor lasers output overlaps with at least two semiconductor laser outputs.
Above-mentioned optical coupling element can be various elements usually used in this field, as long as can realize its function.For example, in an embodiment of the present invention, can use such as prism, lens, optical fiber and leaded light awl etc. as above-mentioned optical coupling element.
In addition, from a plurality of semiconductor laser LD
1, LD
2, LD
3LD
nThe middle method of predetermined semiconductor laser of selecting also can have multiple.For example, the user can manually select and control semiconductor laser as required, with the spectrum that obtains to be scheduled to.For another example, can also controller be set, thereby pass through this controller automatically from a plurality of semiconductor laser LD for the semiconductor laser module device in the embodiment of the invention
1, LD
2, LD
3LD
nIn select predetermined semiconductor laser and selected semiconductor laser controlled, with the spectrum that obtains to be scheduled to.
Fig. 2 be two concrete operating states of the semiconductor laser module device that provides of embodiments of the invention and under this operating state the sketch map of the spectrum of resulting laser.
As shown in Figure 2, under operating state, the user need be controlled at λ with Wavelength of Laser therein
I+j, and in various semiconductor lasers known in the art, all can not meet the demands through any one semiconductor laser work separately.At this moment, the user can select and wavelength X
I+jTwo corresponding semiconductor laser LD
i, LD
jWork simultaneously, and through the spectrum lambda with output
iAnd λ
jCombination obtains target optical spectrum λ
I+j
Under another operating state, the user need be controlled at λ with Wavelength of Laser
X+y+z, and in various semiconductor lasers known in the art, all can not meet the demands through any one semiconductor laser work separately.At this moment, the user can select and wavelength X
X+y+zThree corresponding semiconductor laser LD
x, LD
y, LD
zWork simultaneously, and through the spectrum lambda with output
x, λ
xAnd λ
zCombination obtains target optical spectrum λ
X+y+z
Fig. 3 is the sketch map of laser of Wavelength of Laser scope and the output of single semiconductor laser of the semiconductor laser module device output that provides of the expression embodiment of the invention.As shown in Figure 3, can expand the scope of output wavelength greatly through the semiconductor laser module device of the embodiment of the invention.
Though more than the situation of working simultaneously with at least two semiconductor lasers in the semiconductor laser module device be that example is illustrated; But should be appreciated that; When the some semiconductor lasers in the semiconductor laser module device work independently just can export the laser of required wavelength the time, also can utilize pairing semiconductor laser output laser separately.
In addition, except that above-mentioned semiconductor laser module device, embodiments of the invention also provide a kind of control method of above-mentioned semiconductor laser module device, and this control method comprises according to required spectrum controls a plurality of semiconductor laser LD
1, LD
2, LD
3LD
nThe step of the corresponding semiconductor laser work of middle predetermined quantity.
According to the abovementioned embodiments of the present invention, the user can be according to predetermined spectrum and from a plurality of semiconductor laser LD
1, LD
2, LD
3LD
nIn select the corresponding semiconductor laser of predetermined quantity, the laser of the spectrum that obtains predetermined distribution thereby the spectrum of the laser through making selected semiconductor laser output overlaps.Utilize the control method of above-mentioned semiconductor laser module device, can in scope, obtain the spectrum of any wavelength of continuous distribution through selecting different semiconductor lasers than broad.
In the description of this specification, the description of reference term " example ", " concrete example ", " some examples ", " embodiment " or " some embodiment " etc. means the concrete characteristic, structure, material or the characteristics that combine this embodiment or example to describe and is contained at least one embodiment of the present invention or the example.In this manual, the schematic statement to above-mentioned term not necessarily refers to identical embodiment or example.And concrete characteristic, structure, material or the characteristics of description can combine with suitable manner in any one or more embodiment or example.
Although illustrated and described embodiments of the invention above; It is understandable that; The foregoing description is exemplary; Can not be interpreted as limitation of the present invention, those of ordinary skill in the art can change the foregoing description under the situation that does not break away from principle of the present invention and aim within the scope of the invention, modification, replacement and modification.
Claims (10)
1. a semiconductor laser module device is characterized in that, comprising:
A plurality of semiconductor lasers; Said a plurality of semiconductor laser is used for the mutually different laser of output wavelength, and said a plurality of semiconductor laser spectrum of being set to the laser of at least two outputs in said a plurality of semiconductor laser can overlap with the laser of the spectrum that obtains having predetermined distribution.
2. semiconductor laser module device according to claim 1 is characterized in that, the relation between the optical maser wavelength of any two semiconductor lasers output that output wavelength connects recently in said a plurality of semiconductor lasers is:
λ
i<λ
i+1<λ
i+Δλ
i/2
Wherein, λ
iThe optical maser wavelength of representing i semiconductor laser output in said any two said semiconductor lasers, Δ λ
iThe spectral width of representing the laser of said i semiconductor laser output, λ
I+1The Wavelength of Laser of representing i+1 semiconductor laser output in said any two semiconductor lasers.
3. semiconductor laser module device according to claim 1 is characterized in that, the Wavelength of Laser of said semiconductor laser output is 0.3 μ m～30 μ m.
4. semiconductor laser module device according to claim 1 is characterized in that, said a plurality of semiconductor lasers are encapsulated in the semiconductor laser packing.
5. semiconductor laser module device according to claim 1 is characterized in that the working temperature of a plurality of said semiconductor lasers is identical.
6. semiconductor laser module device according to claim 1 is characterized in that, also comprises:
Temperature controller, said temperature controller is used to control the working temperature of said semiconductor laser.
7. semiconductor laser module device according to claim 1 is characterized in that, also comprises:
Optical coupling element, said optical coupling element be used to be coupled said at least two semiconductor lasers output laser so that the spectrum of the laser of said at least two semiconductor lasers output overlap.
8. semiconductor laser module device according to claim 7 is characterized in that, said optical coupling element is prism, lens, optical fiber or leaded light awl.
9. semiconductor laser module device according to claim 1 is characterized in that, also comprises:
Controller, said controller are used for controlling the corresponding semiconductor laser work of said a plurality of semiconductor laser according to the spectrum of said predetermined distribution.
10. the control method according to each described semiconductor laser module device among the claim 1-9 is characterized in that, comprises the corresponding semiconductor laser work of controlling predetermined quantity in said a plurality of semiconductor laser according to required spectrum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210135886.1A CN102723666B (en) | 2012-05-03 | 2012-05-03 | Semiconductor laser module device and control method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210135886.1A CN102723666B (en) | 2012-05-03 | 2012-05-03 | Semiconductor laser module device and control method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN102723666A true CN102723666A (en) | 2012-10-10 |
| CN102723666B CN102723666B (en) | 2016-01-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210135886.1A Expired - Fee Related CN102723666B (en) | 2012-05-03 | 2012-05-03 | Semiconductor laser module device and control method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018121059A1 (en) * | 2016-12-30 | 2018-07-05 | 深圳市光峰光电技术有限公司 | Laser light source and projection device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6775308B2 (en) * | 2001-06-29 | 2004-08-10 | Xanoptix, Inc. | Multi-wavelength semiconductor laser arrays and applications thereof |
| JP2007124019A (en) * | 2005-10-25 | 2007-05-17 | Nippon Telegr & Teleph Corp <Ntt> | Optical transmitter and optical transmission method |
| CN201004529Y (en) * | 2007-01-30 | 2008-01-09 | 上海幻晟光电科技有限公司 | Optical coupler for high power semiconductor laser |
| CN101350498A (en) * | 2007-07-20 | 2009-01-21 | 优迪那半导体有限公司 | Method of controlling semiconductor laser |
-
2012
- 2012-05-03 CN CN201210135886.1A patent/CN102723666B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6775308B2 (en) * | 2001-06-29 | 2004-08-10 | Xanoptix, Inc. | Multi-wavelength semiconductor laser arrays and applications thereof |
| JP2007124019A (en) * | 2005-10-25 | 2007-05-17 | Nippon Telegr & Teleph Corp <Ntt> | Optical transmitter and optical transmission method |
| CN201004529Y (en) * | 2007-01-30 | 2008-01-09 | 上海幻晟光电科技有限公司 | Optical coupler for high power semiconductor laser |
| CN101350498A (en) * | 2007-07-20 | 2009-01-21 | 优迪那半导体有限公司 | Method of controlling semiconductor laser |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018121059A1 (en) * | 2016-12-30 | 2018-07-05 | 深圳市光峰光电技术有限公司 | Laser light source and projection device |
| CN108267917A (en) * | 2016-12-30 | 2018-07-10 | 深圳市光峰光电技术有限公司 | laser light source and projection device |
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| Publication number | Publication date |
|---|---|
| CN102723666B (en) | 2016-01-20 |
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Granted publication date: 20160120 Termination date: 20190503 |