CN102723382A - Photoelectric conversion transparent film for silicon solar cell - Google Patents
Photoelectric conversion transparent film for silicon solar cell Download PDFInfo
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- CN102723382A CN102723382A CN2012102203444A CN201210220344A CN102723382A CN 102723382 A CN102723382 A CN 102723382A CN 2012102203444 A CN2012102203444 A CN 2012102203444A CN 201210220344 A CN201210220344 A CN 201210220344A CN 102723382 A CN102723382 A CN 102723382A
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- solar cell
- silicon solar
- transparent film
- transparent membrane
- photoelectric conversion
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Abstract
The invention relates to a photoelectric conversion transparent film for a silicon solar cell. The transparent film comprises 15-22.5wt% of indium oxide, 0.15-0.25wt% of cerium and balanced zinc oxide. The transmissivity of the transparent film doped with rare-earth element on electromagnetic waves with the length of 300-900nm exceeds 90%. The transparent film is deposited on the surface of the silicon solar cell, the thermalization effect of the silicon solar cell is reduced, and photoelectric conversion efficiency of the cell is improved.
Description
Technical field
The invention belongs to the technical field of solar power generation, more particularly, the present invention relates to a kind of silicon solar cell and transform transparent membrane with photoelectricity.
Background technology
Be accompanied by the increasingly sharpening of exhaustion, problem of environmental pollution day by day of traditional energy, the development and application of new forms of energy has become human research's focus.Solar energy inexhaustible, green non-pollution is one of emphasis of new energy development utilization.
Solar energy thermal-power-generating is an important technology approach that large-scale develops and utilizes solar energy; Tower, slot type, dish formula system are arranged at present; Wherein more with slot type and tower system commercial application; Particularly trough type solar power generation is unique in the world up to now mature technology through commercialized running in 20 years, and its cost is far below photovoltaic generation.
The photo-thermal transformation efficiency is a key index, and often the raising of one percentage point all is a strain after.The solar cell photovoltaic generating is the regenerative resource of a kind of cleaning, safety, owing to receive the restriction of many aspects such as principle, structure and material, the lifting of traditional structure solar battery efficiency is faced with significant challenge.Silicon is not only the basic material of electronic chip, integrated circuit as the most common, most important semi-conducting material, also in photovoltaic industry, is bringing into play absolute leading role.Because silicon solar cell will be in dominant position for a long time, therefore carry out and improve silicon solar cell the research of the utilization ratio of light is extremely important.Yet owing to receive the restrictive function of semiconductor silicon band gap, nearly 30% solar radiation energy is wasted because of thermal loss, and this becomes one of bottleneck of restriction efficiency of solar cell raising.Promptly produce " heat " charge carrier when battery absorbs high-energy photon, at the bottom of " heat " carrier relaxation conduction band or top of valence band, this part energy is thermal loss with the form loss of lattice heat.
Transparent membrane is because with the silicon solar cell process compatible and have high transparent, so this material is reducing silicon solar cell thermalization effect, improving and have significant application value aspect the photoelectric conversion efficiency.
Summary of the invention
In order to solve the above-mentioned technical problem that exists in the prior art problem, the object of the present invention is to provide a kind of transparent membrane that can effectively improve the battery operated efficient of silicon-based solar energy thin film.
A kind of silicon solar cell transforms transparent membrane with photoelectricity, it is characterized in that the indium oxide that consists of 15-22.5wt% of described transparent membrane, the cerium of 0.15-0.25 wt%, the tin ash of 27.5-42.5wt% and the zinc oxide of surplus.
Wherein, the thickness of said transparent membrane is 100-250nm.
Wherein, said transparent membrane adopts the magnetically controlled sputter method preparation.
Wherein, said magnetically controlled sputter method may further comprise the steps:
Zinc oxide and the purity that cerium is mixed in utilization be 99.99% indium oxide and tin ash as sputtering target material, utilize magnetically controlled sputter method to prepare thin-film material: with silicon chip or quartz is substrate, feeds purity and be 99.999% O
2, underlayer temperature is 300～500 ℃, operating air pressure is 0.5～10Pa.
Compared with prior art: the described transparent membrane that rare earth element is arranged of mixing is that the electromagnetic wave transmitance of 300-900nm surpasses 90% to wavelength.Transparent membrane of the present invention is deposited on the silicon solar cell upper surface, can reduces the thermalization effect of silicon solar cell, improve the photoelectric conversion efficiency of battery.
Embodiment
Embodiment 1
It is that 99.99% indium oxide and tin ash are target that zinc oxide that the 0.25wt% cerium is arranged and purity are mixed in employing, adopts intermediate frequency to react vertical magnetron sputtering film device and carries out plated film.
With the silicon chip is substrate, at first silicon chip is cleaned, and in the coating chamber of packing into after the oven dry, feeding purity is 99.99% O
2, flow is 150 sccm, and voltage is 800 V, and electric current is 25 A, and underlayer temperature is 300 ℃, operating air pressure is 0.5Pa, deposits the transparent membrane of required composition and proportioning through the sputtering rate of controlling each target.
Embodiment 2
It is that 99.99% indium oxide and tin ash are target that zinc oxide that the 0.25wt% cerium is arranged and purity are mixed in employing, adopts intermediate frequency to react vertical magnetron sputtering film device and carries out plated film.
With the silicon chip is substrate, at first silicon chip is cleaned, and in the coating chamber of packing into after the oven dry, feeding purity is 99.99% O
2, flow is 150 sccm, and voltage is 700 V, and electric current is 25 A, and underlayer temperature is 400 ℃, operating air pressure is 0.5 Pa, deposits the transparent membrane of required composition and proportioning through the sputtering rate of controlling each target.
Embodiment 3
It is that 99.99% indium oxide is a target that zinc oxide that the 0.20wt% cerium is arranged and purity are mixed in employing, adopts intermediate frequency to react vertical magnetron sputtering film device and carries out plated film.
With the silicon chip is substrate, at first silicon chip is cleaned, in the coating chamber of packing into after the oven dry; Feeding purity is 99.99% O2, and flow is 150 sccm, and voltage is 800 V; Electric current is 25 A; Underlayer temperature is 500 ℃, and operating air pressure is 0.5Pa, deposits the transparent membrane of required composition and proportioning through the sputtering rate of controlling each target.
Claims (3)
1. a silicon solar cell transforms transparent membrane with photoelectricity, it is characterized in that the indium oxide that consists of 15-22.5wt% of described transparent membrane, the cerium of 0.15-0.25 wt%, the tin ash of 27.5-42.5wt% and the zinc oxide of surplus.
2. the described transparent membrane of claim 1, the thickness that it is characterized in that said transparent membrane is 100-250nm.
3. the described transparent membrane of claim 1 is characterized in that said transparent membrane adopts the magnetically controlled sputter method preparation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102203444A CN102723382A (en) | 2012-06-29 | 2012-06-29 | Photoelectric conversion transparent film for silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102203444A CN102723382A (en) | 2012-06-29 | 2012-06-29 | Photoelectric conversion transparent film for silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102723382A true CN102723382A (en) | 2012-10-10 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102203444A Pending CN102723382A (en) | 2012-06-29 | 2012-06-29 | Photoelectric conversion transparent film for silicon solar cell |
Country Status (1)
| Country | Link |
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| CN (1) | CN102723382A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302442A (en) * | 1999-02-24 | 2001-07-04 | 帝人株式会社 | Transparent conductive laminate, its manufacturing method, and display comprising transparent conductive laminate |
| JP2010198836A (en) * | 2009-02-24 | 2010-09-09 | Fujikura Ltd | Photoelectric conversion element |
| US20110233539A1 (en) * | 2010-03-26 | 2011-09-29 | Samsung Electronics Co., Ltd. | Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film |
-
2012
- 2012-06-29 CN CN2012102203444A patent/CN102723382A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302442A (en) * | 1999-02-24 | 2001-07-04 | 帝人株式会社 | Transparent conductive laminate, its manufacturing method, and display comprising transparent conductive laminate |
| JP2010198836A (en) * | 2009-02-24 | 2010-09-09 | Fujikura Ltd | Photoelectric conversion element |
| US20110233539A1 (en) * | 2010-03-26 | 2011-09-29 | Samsung Electronics Co., Ltd. | Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121010 |