CN102723373A - Light-absorption transparent thin film of thin film solar cell - Google Patents
Light-absorption transparent thin film of thin film solar cell Download PDFInfo
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- CN102723373A CN102723373A CN2012102198037A CN201210219803A CN102723373A CN 102723373 A CN102723373 A CN 102723373A CN 2012102198037 A CN2012102198037 A CN 2012102198037A CN 201210219803 A CN201210219803 A CN 201210219803A CN 102723373 A CN102723373 A CN 102723373A
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- thin film
- solar cell
- transparent membrane
- transparent thin
- light
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Abstract
The invention relates to a light-absorption transparent thin film of a thin film solar cell. The transparent thin film is a cerium-doped (Ce-doped) indium oxide thin film, wherein the content of Ce is between 0.2 weight percent and 0.75 weight percent. Over 90 percent of electromagnetic wave with wavelength of 300 to 900 nm can penetrate through the transparent thin film which is doped with rare-earth elements. By depositing the transparent thin film on the upper surface of a silicon solar cell, a thermalization effect of the silicon solar cell can be reduced, and the photoelectric conversion efficiency of the cell is improved.
Description
Technical field
The invention belongs to the technical field of solar power generation, more particularly, the present invention relates to a kind of thin-film solar cells light absorption transparent membrane.
Background technology
Be accompanied by the increasingly sharpening of exhaustion, problem of environmental pollution day by day of traditional energy, the development and application of new forms of energy has become human research's focus.Solar energy inexhaustible, green non-pollution is one of emphasis of new energy development utilization.
Solar energy thermal-power-generating is an important technology approach that large-scale develops and utilizes solar energy; Tower, slot type, dish formula system are arranged at present; Wherein more with slot type and tower system commercial application; Particularly trough type solar power generation is unique in the world up to now mature technology through commercialized running in 20 years, and its cost is far below photovoltaic generation.
The photo-thermal transformation efficiency is a key index, and often the raising of one percentage point all is a strain after.The solar cell photovoltaic generating is the regenerative resource of a kind of cleaning, safety, owing to receive the restriction of many aspects such as principle, structure and material, the lifting of traditional structure solar battery efficiency is faced with significant challenge.Silicon is not only the basic material of electronic chip, integrated circuit as the most common, most important semi-conducting material, also in photovoltaic industry, is bringing into play absolute leading role.Because silicon solar cell will be in dominant position for a long time, therefore carry out and improve silicon solar cell the research of the utilization ratio of light is extremely important.Yet owing to receive the restrictive function of semiconductor silicon band gap, nearly 30% solar radiation energy is wasted because of thermal loss, and this becomes one of bottleneck of restriction efficiency of solar cell raising.Promptly produce " heat " charge carrier when battery absorbs high-energy photon, at the bottom of " heat " carrier relaxation conduction band or top of valence band, this part energy is thermal loss with the form loss of lattice heat.
Transparent membrane is because with the silicon solar cell process compatible and have high transparent, so this material is reducing silicon solar cell thermalization effect, improving and have significant application value aspect the photoelectric conversion efficiency.
Summary of the invention
In order to solve the above-mentioned technical problem that exists in the prior art problem, the object of the present invention is to provide a kind of transparent membrane that can effectively improve the battery operated efficient of silicon-based solar energy thin film.
A kind of thin-film solar cells light absorption transparent membrane is characterized in that described transparent membrane is the indium oxide film that Ce mixes, and wherein the content of Ce is 0.2-0.75 wt%.
Wherein, the thickness of said transparent membrane is 100-200 nm.
Wherein, said transparent membrane adopts the magnetically controlled sputter method preparation.
Wherein, said magnetically controlled sputter method may further comprise the steps:
The indium oxide that Ce is mixed in utilization is ceramic target, utilizes magnetically controlled sputter method to prepare thin-film material: with silicon chip or quartz is substrate, and feeding purity is 99.99% O
2, underlayer temperature is 300～600 ℃, operating air pressure is 0.5～10Pa.
Compared with prior art: the described transparent membrane that rare earth element is arranged of mixing is that the electromagnetic wave transmitance of 300-900nm surpasses 90% to wavelength.Transparent membrane of the present invention is deposited on the silicon solar cell upper surface, can reduces the thermalization effect of silicon solar cell, improve the photoelectric conversion efficiency of battery.
Embodiment
Embodiment 1
It is target that the indium oxide that 0.5wt%Ce is arranged is mixed in employing, adopts intermediate frequency to react vertical magnetron sputtering film device and carries out plated film.
With the silicon chip is substrate, at first silicon chip is cleaned, and in the coating chamber of packing into after the oven dry, feeding purity is 99.99% O2, and flow is 150 sccm, and voltage is 800 V, and electric current is 25 A, and underlayer temperature is 300 ℃, and operating air pressure is 0.5Pa.
Embodiment 2
It is target that the indium oxide that 1.2wt%Ce is arranged is mixed in employing, adopts intermediate frequency to react vertical magnetron sputtering film device and carries out plated film.
With the silicon chip is substrate, at first silicon chip is cleaned, and in the coating chamber of packing into after the oven dry, feeding purity is 99.99% O2, and flow is 150 sccm, and voltage is 800 V, and electric current is 30 A, and underlayer temperature is 450 ℃, and operating air pressure is 0.5Pa.
Embodiment 3
It is target that the indium oxide that 0.8wt%Ce is arranged is mixed in employing, adopts intermediate frequency to react vertical magnetron sputtering film device and carries out plated film.
With the silicon chip is substrate, at first silicon chip is cleaned, and in the coating chamber of packing into after the oven dry, feeding purity is 99.99% O2, and flow is 150 sccm, and voltage is 800 V, and electric current is 30 A, and underlayer temperature is 450 ℃, and operating air pressure is 0.5Pa.
Claims (3)
1. a thin-film solar cells light absorption transparent membrane is characterized in that described transparent membrane is the indium oxide film that Ce mixes, and wherein the content of Ce is 0.2-0.75 wt%.
2. the described transparent membrane of claim 1, the thickness that it is characterized in that said transparent membrane is 100-200 nm.
3. the described transparent membrane of claim 1 is characterized in that said transparent membrane adopts the magnetically controlled sputter method preparation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102198037A CN102723373A (en) | 2012-06-29 | 2012-06-29 | Light-absorption transparent thin film of thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102198037A CN102723373A (en) | 2012-06-29 | 2012-06-29 | Light-absorption transparent thin film of thin film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102723373A true CN102723373A (en) | 2012-10-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102198037A Pending CN102723373A (en) | 2012-06-29 | 2012-06-29 | Light-absorption transparent thin film of thin film solar cell |
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| CN (1) | CN102723373A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08260134A (en) * | 1995-03-22 | 1996-10-08 | Toppan Printing Co Ltd | Sputtering target |
| JPH09176841A (en) * | 1995-12-21 | 1997-07-08 | Toppan Printing Co Ltd | Sputtering target |
| CN1930318A (en) * | 2004-03-31 | 2007-03-14 | 出光兴产株式会社 | Indium oxide-cerium oxide sputtering target, transparent conductive film, and method for producing transparent conductive film |
| CN102102173A (en) * | 2009-11-30 | 2011-06-22 | 住友金属矿山株式会社 | Oxide evaporation material, transparent conducting film, and solar cell |
| CN102473760A (en) * | 2009-09-18 | 2012-05-23 | 三洋电机株式会社 | Solar battery module, and solar battery system |
-
2012
- 2012-06-29 CN CN2012102198037A patent/CN102723373A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08260134A (en) * | 1995-03-22 | 1996-10-08 | Toppan Printing Co Ltd | Sputtering target |
| JPH09176841A (en) * | 1995-12-21 | 1997-07-08 | Toppan Printing Co Ltd | Sputtering target |
| CN1930318A (en) * | 2004-03-31 | 2007-03-14 | 出光兴产株式会社 | Indium oxide-cerium oxide sputtering target, transparent conductive film, and method for producing transparent conductive film |
| CN102473760A (en) * | 2009-09-18 | 2012-05-23 | 三洋电机株式会社 | Solar battery module, and solar battery system |
| CN102102173A (en) * | 2009-11-30 | 2011-06-22 | 住友金属矿山株式会社 | Oxide evaporation material, transparent conducting film, and solar cell |
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Application publication date: 20121010 |