CN102723387A - ZnSnO3-X transparent thin film for silicon solar battery - Google Patents
ZnSnO3-X transparent thin film for silicon solar battery Download PDFInfo
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- CN102723387A CN102723387A CN2012102198041A CN201210219804A CN102723387A CN 102723387 A CN102723387 A CN 102723387A CN 2012102198041 A CN2012102198041 A CN 2012102198041A CN 201210219804 A CN201210219804 A CN 201210219804A CN 102723387 A CN102723387 A CN 102723387A
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- silicon solar
- thin film
- transparent thin
- solar battery
- znsno3
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Abstract
The invention relates to a ZnSnO3-X transparent thin film for a silicon solar battery, wherein X in the transparent thin film is equal to 0.05-0.5. The transmittance of the transparent thin film to electromagnetic waves with the wavelength of 300-900 nm is more than 92%. The transparent thin film disclosed by the invention is deposited on the upper surface of a silicon solar battery, so that the thermalization effect of the silicon solar battery can be reduced and the photoelectric conversion efficiency of the battery is improved.
Description
Technical field
The invention belongs to the technical field of solar power generation, more particularly, the present invention relates to a kind of silicon solar cell and use ZnSnO
3-XTransparent membrane.
Background technology
Be accompanied by the increasingly sharpening of exhaustion, problem of environmental pollution day by day of traditional energy, the development and application of new forms of energy has become human research's focus.Solar energy inexhaustible, green non-pollution is one of emphasis of new energy development utilization.
Solar energy thermal-power-generating is an important technology approach that large-scale develops and utilizes solar energy; Tower, slot type, dish formula system are arranged at present; Wherein more with slot type and tower system commercial application; Particularly trough type solar power generation is unique in the world up to now mature technology through commercialized running in 20 years, and its cost is far below photovoltaic generation.
The photo-thermal transformation efficiency is a key index, and often the raising of one percentage point all is a strain after.The solar cell photovoltaic generating is the regenerative resource of a kind of cleaning, safety, owing to receive the restriction of many aspects such as principle, structure and material, the lifting of traditional structure solar battery efficiency is faced with significant challenge.Silicon is not only the basic material of electronic chip, integrated circuit as the most common, most important semi-conducting material, also in photovoltaic industry, is bringing into play absolute leading role.Because silicon solar cell will be in dominant position for a long time, therefore carry out and improve silicon solar cell the research of the utilization ratio of light is extremely important.Yet owing to receive the restrictive function of semiconductor silicon band gap, nearly 30% solar radiation energy is wasted because of thermal loss, and this becomes one of bottleneck of restriction efficiency of solar cell raising.Promptly produce " heat " charge carrier when battery absorbs high-energy photon, at the bottom of " heat " carrier relaxation conduction band or top of valence band, this part energy is thermal loss with the form loss of lattice heat.
Transparent membrane is because with the silicon solar cell process compatible and have high transparent, so this material is reducing silicon solar cell thermalization effect, improving and have significant application value aspect the photoelectric conversion efficiency.
Summary of the invention
In order to solve the above-mentioned technical problem that exists in the prior art problem, the object of the present invention is to provide a kind of transparent membrane that can effectively improve the battery operated efficient of silicon-based solar energy thin film.
A kind of silicon solar cell is used ZnSnO
3-XTransparent membrane is characterized in that X=0.05-0.5 in the described transparent membrane.
Wherein, the thickness of said transparent membrane is 100-200nm.
Wherein, said transparent membrane adopts the magnetically controlled sputter method preparation.
Wherein, said magnetically controlled sputter method may further comprise the steps:
Utilizing purity is that 99.99% zinc oxide and tin ash are as sputtering target material; Utilize magnetically controlled sputter method to prepare thin-film material: with silicon chip or quartz is substrate; Feed oxidizing gas for example O2, air etc., underlayer temperature is 300～500 ℃, and operating air pressure is 0.5～10Pa; Then at reducibility gas H for example
2Under the condition, at 400-500 ℃ of annealing in process 1-2 hour.
Compared with prior art: transparent membrane of the present invention is that the electromagnetic wave transmitance of 300-900nm surpasses 92% to wavelength.Transparent membrane of the present invention is deposited on the silicon solar cell upper surface, can reduces the thermalization effect of silicon solar cell, improve the photoelectric conversion efficiency of battery.
Embodiment
Embodiment 1
Utilize purity be 99.99% zinc oxide and tin ash as sputtering target material, utilize magnetically controlled sputter method to prepare thin-film material: with silicon chip or quartz is substrate, feeds O
2, underlayer temperature is 350 ℃, operating air pressure is 0.5～10Pa; Then at H
2Under the condition, obtained described transparent membrane in 2 hours 400 ℃ of annealing in process.
Embodiment 2
Utilize purity be 99.99% zinc oxide and tin ash as sputtering target material, utilize magnetically controlled sputter method to prepare thin-film material: with silicon chip or quartz is substrate, feeds O
2, underlayer temperature is 450 ℃, operating air pressure is 10 Pa; Then at H
2Under the condition, obtained described transparent membrane in 1 hour 500 ℃ of annealing in process.
Embodiment 3
Utilize purity be 99.99% zinc oxide and tin ash as sputtering target material, utilize magnetically controlled sputter method to prepare thin-film material: with silicon chip or quartz is substrate, feeds O
2, underlayer temperature is 500 ℃, operating air pressure is 5Pa; Then at H
2Under the condition, obtained described transparent membrane in 1.5 hours 350 ℃ of annealing in process.
Claims (2)
1. a silicon solar cell is used ZnSnO
3-XTransparent membrane is characterized in that X=0.05-0.5 in the described transparent membrane.
2. the described ZnSnO of claim 1
3-XTransparent membrane, the thickness of said transparent membrane are 100-200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102198041A CN102723387A (en) | 2012-06-29 | 2012-06-29 | ZnSnO3-X transparent thin film for silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102198041A CN102723387A (en) | 2012-06-29 | 2012-06-29 | ZnSnO3-X transparent thin film for silicon solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102723387A true CN102723387A (en) | 2012-10-10 |
Family
ID=46949101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102198041A Pending CN102723387A (en) | 2012-06-29 | 2012-06-29 | ZnSnO3-X transparent thin film for silicon solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102723387A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201458973U (en) * | 2009-07-02 | 2010-05-12 | 福耀集团（上海）汽车玻璃有限公司 | Contour-bendable low-radiation coated glass |
-
2012
- 2012-06-29 CN CN2012102198041A patent/CN102723387A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201458973U (en) * | 2009-07-02 | 2010-05-12 | 福耀集团（上海）汽车玻璃有限公司 | Contour-bendable low-radiation coated glass |
Non-Patent Citations (1)
| Title |
|---|
| 黄树来等: "柔性衬底Zn-Sn-O透明导电膜的特性", 《莱阳农学院学报》, vol. 21, no. 3, 31 March 2004 (2004-03-31), pages 245 - 248 * |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121010 |