CN102721990A - Infrared light cut-off filter - Google Patents
Infrared light cut-off filter Download PDFInfo
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- CN102721990A CN102721990A CN2011100785249A CN201110078524A CN102721990A CN 102721990 A CN102721990 A CN 102721990A CN 2011100785249 A CN2011100785249 A CN 2011100785249A CN 201110078524 A CN201110078524 A CN 201110078524A CN 102721990 A CN102721990 A CN 102721990A
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- light
- infrared cut
- rete
- refractive index
- membrane stack
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Abstract
An embodiment of the invention provides an infrared light cut-off filter comprising that: a light transmission substrate, wherein the light transmission substrate is provided with two opposite surfaces, a first surface and a second surface; a first infrared light cut-off film stack disposed on the first surface, wherein the first infrared light cut-off film stack comprises a plurality of first film layers and a plurality of second film layers which are interactively stacked, and the refractive index of each first film layer is less than the refractive index of each second film layer; and a second infrared light cut-off film stack is disposed on the second surface, and comprises a plurality of third film layers and a plurality of fourth film layers which are interactively stacked, and the refractive index of each third film layer is less than the refractive index of each fourth film layer.
Description
Technical field
The present invention is relevant for optical module, and particularly relevant for the infrared cut of light filter.
Background technology
Recently, various digital image pick-ups (like digital camera or digital camera) have been applied to various the merging little by little replace traditional egative film camera widely.Digital image pick-up is to utilize charge-coupled device (CCD) (CCD) or complementary metal oxide semiconductor image sensor (CMOS) as photosensory assembly, is electric signal with the image corresponding conversion that will wait to take the photograph thing.Yet aforesaid charge-coupled device (CCD) (or complementary metal oxide semiconductor image sensor) for example can be responded to the infrared light that human eye can't be seen for the induction range of the light induction range much larger than human eye.Therefore; If the incident light with this infrared light scope does not suitably cover; The color of then aforesaid digital image pick-up institute picked image will be different from the being seen color of waiting to take the photograph thing of human eye, and cause digital image pick-up can't accurately capture the image of waiting to take the photograph thing.
Therefore, digital image pick-up was on the market all installed the infrared cut of light filter before its photosensory assembly, cover with the incident light with the infrared light scope, thereby make its photosensory assembly only sense the incident light of visible-range.Thus, the color of digital image pick-up institute picked image just can be near the being seen color of waiting to take the photograph thing of human eye.The method for making of known infrared cut of light filter is for forming infrared cut of light layer and anti-reflecting layer (anti-reflection layer) respectively on relative two surfaces of substrate.
Fig. 1 illustrates the penetrance of the light of various wavelength to known infrared cut of light filter.Please with reference to Fig. 1, known infrared cut of light filter because of the false relation of rete storehouse can't to the near infrared light wave band (for example wavelength be 900 how rice to 1100 rice how) light reach the effect of ending fully.Therefore, aforementioned light to the penetrance of infrared cut of light filter greater than 1% (shown in Fig. 1 frame of broken lines), so that digital image pick-up institute picked image distortion (or variable color).
Summary of the invention
The technical matters that the present invention will solve is, and is higher by the penetrance of lens to the prior art mid-infrared light, the defective of infrared light light leakage phenomena occurs easily, and a kind of infrared cut of light filter is provided, and can reduce the penetrance of the light of near infrared light wave band.
The technical scheme that the present invention is adopted for its technical matters of solution is, a kind of infrared cut of light filter is provided, and comprising: transparent substrates has opposite first and second surface; The first infrared cut of light membrane stack is disposed on the first surface, and the first infrared cut of light membrane stack comprises multilayer first rete and multilayer second rete of mutual storehouse, and the refractive index of each first rete is less than the refractive index of each second rete; And the second infrared cut of light membrane stack, being disposed on the second surface, the second infrared cut of light membrane stack comprises the multilayer tertiary membrane layer and multilayer the 4th rete of mutual storehouse, and the refractive index of each tertiary membrane layer is less than the refractive index of each the 4th rete.
The infrared cut of light filter of embodiment of the present invention; Has following beneficial effect: by the mode that on the upper and lower surfaces of transparent substrates, disposes two infrared cut of light membrane stacks respectively; Make light when penetrating the infrared cut of light filter, receive the synergism of two infrared cut of light membrane stacks and reduce the penetrance of the light of near infrared light wave band, and then improve the infrared light light leakage phenomena of known infrared light by filter.
Description of drawings
Fig. 1 illustrates the penetrance of the light of various wavelength to known infrared cut of light filter.
Fig. 2 illustrates the sectional view of the infrared cut of light filter of one embodiment of the invention.
Fig. 3 illustrates the penetrance of the light of various wavelength to the infrared cut of light filter of one embodiment of the invention.
Embodiment
Below specify the present invention with embodiment and conjunction with figs., will be appreciated that following narration provides many various embodiment or example, in order to the same attitude of embodiment of the present invention.Assembly that the following stated is specific and arrangement mode be only in order to illustrating, but not in order to limit the present invention.In graphic, the shape of embodiment or thickness are not in order to limit the present invention only in order to explanation.Moreover the assembly that does not illustrate among the figure or describe has the form that common knowledge the knowledgeable is known in the technical field under can be.
Fig. 2 illustrates the sectional view of the infrared cut of light filter of one embodiment of the invention.Please with reference to Fig. 2, the infrared cut of light filter 200 of present embodiment comprises transparent substrates 210, the first infrared cut of light membrane stack 220 and the second infrared cut of light membrane stack 230.Transparent substrates 210 has opposite first 212 and second surface 214.The first infrared cut of light membrane stack 220 is disposed on the first surface 212.The first infrared cut of light membrane stack 220 comprises multilayer first rete 222 and multilayer second rete 224 of mutual storehouse, and the refractive index of first rete 222 is less than the refractive index of second rete 224.In the present embodiment, the optical thickness of first rete 222 is less than the optical thickness of second rete 224.
The second infrared cut of light membrane stack 230 is disposed on the second surface 214, and the second infrared cut of light membrane stack 230 comprises the multilayer tertiary membrane layer 232 and multilayer the 4th rete 234 of mutual storehouse, and the refractive index of each tertiary membrane layer 232 is less than the refractive index of each the 4th rete 234.In the present embodiment, the optical thickness of tertiary membrane layer 232 is less than the optical thickness of the 4th rete 234.(extraneous) light can pass the first infrared cut of light membrane stack 220, transparent substrates 210 and the second infrared cut of light membrane stack 230 in regular turn.
Fig. 3 illustrates the penetrance of the light of various wavelength to the infrared cut of light filter of one embodiment of the invention.It should be noted that; Because present embodiment is to form first and second infrared cut of light membrane stack 220,230 respectively on two surfaces 212,214 up and down at transparent substrates 210; Therefore; When light penetration infrared cut of light filter 200; Can receive the synergism of first and second infrared cut of light membrane stack 220,230 and make the near infrared light wave band (for example wavelength be 900 how rice to 1100 rice how) the penetrance of light less than 0.001% (as shown in Figure 3), and then improve infrared light light leak (IR Leakage) phenomenon of known infrared light by filter.
In one embodiment, first rete 222 is about 1.38~1.44 with the refractive index of tertiary membrane layer 232.The refractive index of second rete 224 and the 4th rete 234 for example is about 2.1~2.7.In other words, first rete 222 is a low-index film with tertiary membrane layer 232, and second rete 224 and the 4th rete 234 are high refractive index layer.
In one embodiment, the direct contact substrate of the first infrared cut of light membrane stack 220 and the second infrared cut of light membrane stack 230.In one embodiment, the first infrared cut of light membrane stack 220 be positioned at the second infrared cut of light membrane stack 230 directly over.
In one embodiment, the rete number (that is sum of high refractive index layer and low-index film) of the first infrared cut of light membrane stack 220 (or second infrared cut of light membrane stack 230) can be 40~60 layers.In addition, can make the rete number of the first infrared cut of light membrane stack 220 and the second infrared cut of light membrane stack 230 identical or different according to circumstances.
The optical thickness of first rete 222, second rete 224, tertiary membrane layer 232 and the 4th rete 234 for example is all λ
0/ 4, λ wherein
0Expression centre wavelength (is 560 rice how at this).
In sum; The present invention is by the mode that on the upper and lower surfaces of transparent substrates, disposes two infrared cut of light membrane stacks respectively; Make light when penetrating the infrared cut of light filter, receive the synergism of two infrared cut of light membrane stacks and reduce the penetrance of the light of near infrared light wave band, and then improve the infrared light light leakage phenomena of known infrared light by filter.
Though the present invention discloses as above with preferred embodiment; But it is not in order to limit scope of the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (9)
1. an infrared cut of light filter is characterized in that, comprising:
Transparent substrates has opposite first and second surface;
The first infrared cut of light membrane stack is disposed on this first surface, and this first infrared cut of light membrane stack comprises multilayer first rete and multilayer second rete of mutual storehouse, and respectively the refractive index of this first rete less than the refractive index of this second rete respectively; And
The second infrared cut of light membrane stack is disposed on this second surface, and this second infrared cut of light membrane stack comprises the multilayer tertiary membrane layer and multilayer the 4th rete of mutual storehouse, and respectively the refractive index of this tertiary membrane layer less than the refractive index of the 4th rete respectively.
2. infrared cut of light filter as claimed in claim 1 is characterized in that, respectively this first rete is 1.38~1.44 with the refractive index of this tertiary membrane layer respectively.
3. infrared cut of light filter as claimed in claim 1 is characterized in that, respectively this second rete is 2.1~2.7 with the refractive index of the 4th rete respectively.
4. infrared cut of light filter as claimed in claim 1 is characterized in that, respectively this first rete comprises monox with the material of this tertiary membrane layer respectively.
5. infrared cut of light filter as claimed in claim 1 is characterized in that, respectively this second rete comprises tantalum oxide with the material of the 4th rete respectively.
6. infrared cut of light filter as claimed in claim 1 is characterized in that the material of this transparent substrates comprises glass or transparent polymer material.
7. infrared cut of light filter as claimed in claim 1 is characterized in that, this first infrared cut of light membrane stack directly contacts this substrate with this second infrared cut of light membrane stack.
8. infrared cut of light filter as claimed in claim 1 is characterized in that, this first infrared cut of light membrane stack be positioned at this second infrared cut of light membrane stack directly over.
9. infrared cut of light filter as claimed in claim 1 is characterized in that, the optical thickness of this first rete is less than the optical thickness of this second rete, and the optical thickness of this tertiary membrane layer is less than the optical thickness of the 4th rete.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2011100785249A CN102721990A (en) | 2011-03-30 | 2011-03-30 | Infrared light cut-off filter |
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CN2011100785249A CN102721990A (en) | 2011-03-30 | 2011-03-30 | Infrared light cut-off filter |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4865405A (en) * | 1987-12-10 | 1989-09-12 | Minolta Camera Kabushiki Kaisha | Optical filter |
CN1697987A (en) * | 2003-05-29 | 2005-11-16 | 株式会社大真空 | Light ray cut filter |
CN1979230A (en) * | 2005-12-07 | 2007-06-13 | 株式会社村上开明堂 | Dielectric multilayer filter |
-
2011
- 2011-03-30 CN CN2011100785249A patent/CN102721990A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4865405A (en) * | 1987-12-10 | 1989-09-12 | Minolta Camera Kabushiki Kaisha | Optical filter |
CN1697987A (en) * | 2003-05-29 | 2005-11-16 | 株式会社大真空 | Light ray cut filter |
CN1979230A (en) * | 2005-12-07 | 2007-06-13 | 株式会社村上开明堂 | Dielectric multilayer filter |
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Application publication date: 20121010 |