CN102718221B - Polycrystalline silicon self-plugging casting device - Google Patents
Polycrystalline silicon self-plugging casting device Download PDFInfo
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- CN102718221B CN102718221B CN201210225750.XA CN201210225750A CN102718221B CN 102718221 B CN102718221 B CN 102718221B CN 201210225750 A CN201210225750 A CN 201210225750A CN 102718221 B CN102718221 B CN 102718221B
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- heating system
- casting
- plugging
- pouring channel
- smelting
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 27
- 238000005266 casting Methods 0.000 title abstract description 31
- 238000010438 heat treatment Methods 0.000 claims abstract description 42
- 238000003723 Smelting Methods 0.000 claims abstract description 39
- 229920005591 polysilicon Polymers 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 43
- 229910052710 silicon Inorganic materials 0.000 abstract description 43
- 239000010703 silicon Substances 0.000 abstract description 43
- 238000002844 melting Methods 0.000 abstract description 25
- 230000008018 melting Effects 0.000 abstract description 24
- 238000000034 method Methods 0.000 abstract description 20
- 238000000746 purification Methods 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 238000005273 aeration Methods 0.000 abstract 1
- 238000010924 continuous production Methods 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 25
- 239000002893 slag Substances 0.000 description 14
- 230000006698 induction Effects 0.000 description 5
- 230000007306 turnover Effects 0.000 description 5
- 238000007499 fusion processing Methods 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000005272 metallurgy Methods 0.000 description 2
- 239000006187 pill Substances 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000282693 Cercopithecidae Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
The invention relates to equipment which is used for purifying solar-grade polycrystalline silicon by adopting a metallurgic method, and provides a polycrystalline silicon self-plugging casting device which can carry out casting through a casting channel at the bottom opening of a crucible. The polycrystalline silicon self-plugging casting device is provided with the casting channel, a heating system and a smelting crucible, wherein the heating system is arranged around the outer side of the casting channel, and the bottom of the smelting crucible is connected with the casting channel. The polycrystalline silicon self-plugging casting device can be applied to various silicon smelting processes including slagging, aeration, directional solidification, vacuum smelting and the like. The overturn casting manner is completely replaced, the continuous purification of various processes can be realized, meanwhile, the successful connection among various different smelting processes is also realized, the processes of uninterrupted solidifying and melting during the process of silicon smelting and purifying are reduced, the energy consumption is greatly saved, and more critically, the continuous production can be realized. The polycrystalline silicon self-plugging casting device has considerable market application prospects.
Description
Technical field
The present invention relates to a kind of equipment that adopts metallurgy method purifying solar energy level polysilicon, especially relate to a kind of polysilicon Self-plugging pouring device.
Background technology
In the metallurgy method preparation technology of solar-grade polysilicon, a conventional step is exactly ' casting '.As: Chinese patent CN101724900A discloses a kind of slag making smelting apparatus, this device is established first and second smelting pot, first silicon and slag is mixed and puts into first smelting pot, and install slag in second smelting pot, then the white residue mixture in first crucible is carried out to heat fused stir-melting, after completing, add BaCO
3at the bottom of making slag sink down into crucible mutually, then first crucible silicon liquid to the second smelting pot that turnover casting is poured out upper strata is carried out to secondary slag making melting to the right, and by first crucible again upset left slag in crucible is poured into mutually contain slag container.After second crucible for smelting completes, repeat above-mentioned steps and carry out the separation of slag silicon.Whole device can complete the repeatedly slag making melting of silicon smoothly, and realize slag silicon and separate well, if but by this purifying plant for the manufacture of main equipment (as: 400kg or more than), now the weight of the weight of crucible, thermal insulation layer, add the silicon liquid in equipment fusion process weight very heavy, first crucible is poured silicon liquid in the process of second crucible by turnover casting, coil will be subject to very large torsion, is easy to make ruhmkorff coil to produce distortion, distortion, even destroy; Secondly, the silicon liquid of first crucible is poured in the process of second crucible, if the amount of silicon liquid is very large, silicon liquid is easily poured out beyond second crucible, causes the waste of HIGH-PURITY SILICON, while also to have potential safety hazard.
Chinese patent CN 102219219 A disclose the device of a kind of directional freeze and slag filter smelting polycrystalline silicon purifying, it forms polysilicon liquid by the polycrystalline silicon material that melts high boron, high metal in a monkey, then polysilicon liquid is imported continuously and is scattered in the liquid slag former of large crucible.This gatherer can be realized the casting function of silicon, but does not have extra thermal source and top to open wide, and therefore thermal losses is very large, with regard to easily solidifying in guide groove, silicon water cannot be flowed into smoothly in the middle of large crucible if the temperature of silicon is not high enough simultaneously.
U.S. Pat 4312849 discloses a kind of smelting apparatus, adopts lateral opening, and carries out shutoff pouring gate by piston.The shortcoming of this device is because silicon liquid is very sticky, is easy to cause that piston is fixed, owing to being hot environment, the material of piston is had to very high requirement in addition, and has operational safety hidden danger.
Chinese patent CN 101343063 B disclose a kind of purifying plant of solar-grade polysilicon, first it carry out heat fused by ruhmkorff coil to the silicon of first crucible, then under the condition of certain temperature and vacuum tightness, ventilate and vacuum melting, after the first step melting completes, the silicon liquid of melting is molded into and in second crucible and under certain thermograde condition, carries out directional freeze and obtain silicon ingot, realized the ingenious connection between multiple technique.But in this invention except there is same shortcoming with Chinese patent CN101724900A, also because this device is for vacuum melting, adopt turnover casting mode can make whole furnace chamber volume increase more than 3 times, make whole system under hot conditions, be difficult to realize the object of high vacuum dephosphorization.In addition, once the large-scale plant crucible of this purifying plant occurs leaking silicon phenomenon, be easy to burn furnace shell, the serious consequence such as may set off an explosion.
Summary of the invention
The object of the invention is to for the existing problem of above-mentioned patent, a kind of polysilicon Self-plugging pouring device that can cast by crucible bottom opening pouring channel is provided.
The present invention is provided with pouring channel, heating system and smelting pot, and described heating system is located at surrounding outside pouring channel, between described smelting pot bottom and pouring channel, is connected.
The cross section of described pouring channel can be circle, trilateral or Polygons etc.; The longitudinal section of described pouring channel can be spination, vesicular, wavy line or concavo-convex right-angle line etc., and described spination can adopt the spination in point, circle, four directions etc.
Described heating system can adopt self-induction heating system, external resistor thermal source heating system, infrared heating system, plasma heating system, arc heating system or directly to the pouring channel heating etc. of switching on.
Between described smelting pot bottom and pouring channel, be connected, can adopt be threaded, grafting or integrated processing etc.
Because pouring channel of the present invention adopts laciniation, therefore silicon is in the process changing from liquid to solid, and volume expands.And this laciniation can be flowed through in pouring channel process at silicon liquid, in sawtooth, survey and leave certain space, in the time that heating system is closed, silicon liquid cooled and solidified expanding in pouring channel, survey left space in sawtooth and be enough to allow the setting expansion of offset silicon, therefore eliminated expansion stress, avoided pouring channel extrusion or cracking and destroy.
Because heating system of the present invention adopts self-induction heating system, and therefore self-induction heating to be one be the most effectively rapidly heated means can make in a short period of time the silicon fusing in pouring channel or solidify.
The present invention can, for the fusion process of various silicon, comprise slag making, ventilation, directional freeze, vacuum melting etc.Thoroughly replace turnover casting mode, can realize polytechnic serialization purifies, also realized the successful connection between various different fusion process simultaneously, reduce silicon constantly solidifying and melting process in melting purification process, greatly saved energy consumption, more crucial ground can be realized serialization and produce.There is very considerable market application foreground.
When work, first cast by crucible bottom opening, coil and crucible can be maintained static, this is quite favourable to main equipment; Secondly, owing to itself being bottom opening casting, even if therefore crucible produces leakage silicon, also can drain to and accept crucible from bottom, can have potential safety hazard; Again, adopt Self-plugging casting mode, the danger that does not just exist pouring channel to stop up; In addition, in vacuum oven, adopt bottom casting, greatly dwindled the volume of vacuum furnace chamber, highly beneficial to realizing high vacuum.This device is simple, easy to operate, easily realizes automatization control, can make the purification of silicon realize serialization, is suitable in large-scale production.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention.
Embodiment
Referring to Fig. 1, the embodiment of the present invention is provided with pouring channel 1, heating system 2 and smelting pot 3, and described heating system 2 is located at pouring channel 1 outside surrounding, between described smelting pot 3 bottoms and pouring channel 1, is threaded connection.
Described pouring channel 1 can adopt laciniation.Described heating system 2 can adopt self-induction heating system.
Smelting pot 3 of the present invention can directly simply be transformed the crucible using in existing 20kg (Si) upset intermediate frequency furnace, adopt the smelting pot 3 (material be graphite, threaded hole internal diameter be 10cm) of bottom with internal thread hole, then pouring channel 1 inner side is designed to laciniation, internal diameter 5cm, it is corresponding with the screw thread of smelting pot that outside top is designed to screw thread, and then pouring channel 1 is threaded connection with smelting pot 3 bottom internal thread holes; And at the outer installation ruhmkorff coil of pouring channel 1 as heating system 2, self-induction heating is the one means that are the most effectively rapidly heated, and can make in a short period of time the silicon fusing in pouring channel or solidify.
The present invention also can directly transform existing 20kg (Si) turnover casting formula vacuum induction melting furnace.Adopt smelting pot 3 is become to an entirety with pouring channel 1 Design and Machining, internal diameter 5cm, pouring channel is designed to spination, and the shape of sawtooth is designed to smooth circular arc, resistance heater is installed as heating system 2 in the periphery of pouring channel 1.
Below provide the application of the present invention in common molten silicon stove:
Adopt the present invention to carry out melting casting experiment.First, in pouring channel 1, fill up the polycrysalline silcon for the treatment of melting, the shutoff during for pill heat.In smelting pot 3, pack polysilicon into and carry out induction heating fusing, after silicon liquid melts completely, under liquid state, keep 30min, then start heating system 2, polysilicon in pouring channel 1 is heated until its fusing, and keep heating power constant, now the silicon liquid in smelting pot 3 spills along pouring channel 1, and is injected into and accepts in crucible.When silicon liquid in smelting pot 3 does not complete casting, just close heating system, pouring channel 1 is begun to cool down, silicon liquid just can solidify in pouring channel 1, and the expansion producing in process of setting is eliminated by laciniation, completes smoothly shutoff simultaneously.Whole casting cycle is very smooth and easy, no abnormal, and pouring channel 1 again Feng Zhehou carries out secondary reinforced melting.Through repeatedly melting casting, all do not find leak silicon phenomenon, smelting pot 3 is all excellent with pouring channel 1.
Below provide the application of the present invention in vacuum induction furnace:
Adopt the present invention to carry out vacuum melting casting experiment.First, in pouring channel 1, fill up the polycrysalline silcon for the treatment of melting, the shutoff during for pill heat; Then, in smelting pot 3, pack polysilicon into, carry out induction heating and vacuum melting by vacuum melting technique, working vacuum degree is minimum reaches 3.48 × 10
-2pa, keeps 30min, then starts heating system 2, and the polysilicon in pouring channel 1 is heated until its fusing and keeps heating power constant, and now the silicon liquid in smelting pot 3 spills along pouring channel 1, and is injected into and accepts in crucible.When silicon liquid in smelting pot 3 does not complete casting, just close heating system, pouring channel 1 is begun to cool down, silicon liquid just can solidify in pouring channel, and the expansion producing in process of setting is eliminated by laciniation, completes smoothly shutoff simultaneously.Whole casting cycle is very smooth and easy, no abnormal, and pouring channel again Feng Zhehou carries out secondary reinforced melting.Through repeatedly melting casting, all do not find leak silicon phenomenon, smelting pot 3 is all excellent with pouring channel 1.
Below provide and adopt the corresponding casting cycle of the present invention:
1) in pouring channel 1, fill up the polycrysalline silcon for the treatment of melting, the shutoff when using first.
2) in smelting pot 3, pack polysilicon into and carry out the melting of corresponding technique, corresponding technique can be slag making, ventilation, vacuum induction melting, electron beam vacuum, beam-plasma etc.;
3) melting completes and starts heating system 2, polysilicon in pouring channel 1 is heated until its fusing, and keep heating power constant, now the silicon liquid in smelting pot 3 will spill along pouring channel 1, and be injected in the smelting pot or ingot mould of next process.
4) when the silicon liquid in smelting pot 3 does not complete casting, just close heating system, pouring channel is begun to cool down, silicon liquid just can solidify in pouring channel, and the expansion producing in process of setting is eliminated by laciniation, completes smoothly shutoff simultaneously
5) repeating step 2)～4), just can realize the serialization fusion process of polysilicon.
Claims (4)
1. polysilicon Self-plugging pouring device, is characterized in that being provided with pouring channel, heating system and smelting pot, and described heating system is located at surrounding outside pouring channel, between described smelting pot bottom and pouring channel, is connected;
The longitudinal section of described pouring channel is spination, vesicular, wavy line or concavo-convex right-angle line.
2. polysilicon Self-plugging pouring device as claimed in claim 1, the cross section that it is characterized in that described pouring channel is circle, trilateral or Polygons.
3. polysilicon Self-plugging pouring device as claimed in claim 1, is characterized in that described heating system adopts self-induction heating system, external resistor thermal source heating system, infrared heating system, plasma heating system, arc heating system or directly to the pouring channel heating of switching on.
4. polysilicon Self-plugging pouring device as claimed in claim 1, is characterized in that being connected between described smelting pot bottom and pouring channel, be adopt be threaded, grafting or integrated processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210225750.XA CN102718221B (en) | 2012-06-28 | 2012-06-28 | Polycrystalline silicon self-plugging casting device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210225750.XA CN102718221B (en) | 2012-06-28 | 2012-06-28 | Polycrystalline silicon self-plugging casting device |
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| Publication Number | Publication Date |
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| CN102718221A CN102718221A (en) | 2012-10-10 |
| CN102718221B true CN102718221B (en) | 2014-06-11 |
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| CN201210225750.XA Active CN102718221B (en) | 2012-06-28 | 2012-06-28 | Polycrystalline silicon self-plugging casting device |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101006205A (en) * | 2004-06-18 | 2007-07-25 | Memc电子材料有限公司 | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| CN101850976A (en) * | 2009-04-01 | 2010-10-06 | 高文秀 | Method for removing boron in silicon metal in transfer ladle |
| CN102060298A (en) * | 2010-11-23 | 2011-05-18 | 合肥飞帆等离子科技有限公司 | Polycrystalline silicon production device and method |
| CN102459077A (en) * | 2009-04-17 | 2012-05-16 | 西利梅尔特公司 | Method and apparatus for purifying a silicon feedstock |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3767637B2 (en) * | 1995-08-21 | 2006-04-19 | 旭硝子株式会社 | High temperature melt conduit support structure |
| JPH09301709A (en) * | 1996-05-13 | 1997-11-25 | Sumitomo Sitix Corp | Method for casting silicon |
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- 2012-06-28 CN CN201210225750.XA patent/CN102718221B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101006205A (en) * | 2004-06-18 | 2007-07-25 | Memc电子材料有限公司 | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| CN101850976A (en) * | 2009-04-01 | 2010-10-06 | 高文秀 | Method for removing boron in silicon metal in transfer ladle |
| CN102459077A (en) * | 2009-04-17 | 2012-05-16 | 西利梅尔特公司 | Method and apparatus for purifying a silicon feedstock |
| CN102060298A (en) * | 2010-11-23 | 2011-05-18 | 合肥飞帆等离子科技有限公司 | Polycrystalline silicon production device and method |
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| CN102718221A (en) | 2012-10-10 |
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Effective date of registration: 20160920 Address after: Siming District of Xiamen city in Fujian Province, 361005 South Siming Road No. 422 South Building 2, Xiamen University Patentee after: Xiamen University Asset Management Co.,Ltd. Address before: Xiamen City, Fujian Province, 361005 South Siming Road No. 422 Patentee before: Xiamen University |
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Effective date of registration: 20170125 Address after: Longchang Jin Zhen Changtai County Industrial Park 363900 Fujian city of Zhangzhou province Chen Hong Kong Industrial Park Building No. 1 Patentee after: Changtai Cheung innovation Mstar Technology Ltd. Address before: Siming District of Xiamen city in Fujian Province, 361005 South Siming Road No. 422 South Building 2, Xiamen University Patentee before: Xiamen University Asset Management Co.,Ltd. |
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Effective date of registration: 20210602 Address after: 361000 School of energy and wooden building B211, Xiang'an campus, Xiamen University, Xiang'an District, Xiamen City, Fujian Province Patentee after: Zheng Songsheng Address before: 363900 Building 1, jinlongchang Industrial Park, Gangyuan Industrial Park, Chenxiang Town, Changtai County, Zhangzhou City, Fujian Province Patentee before: Changtai Cheung innovation Mstar Technology Ltd. |
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Effective date of registration: 20240429 Address after: Room 304-13, Xinye Building, Entrepreneurship Park, Xiamen Torch High tech Zone, Xiamen, Fujian Province, 361000 Patentee after: Xiamen Fumeng Technology Co.,Ltd. Country or region after: China Address before: 361000 School of energy and wooden building B211, Xiang'an campus, Xiamen University, Xiang'an District, Xiamen City, Fujian Province Patentee before: Zheng Songsheng Country or region before: China |