CN102694518A - Manufacturing method for acoustic surface wave element - Google Patents
Manufacturing method for acoustic surface wave element Download PDFInfo
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- CN102694518A CN102694518A CN2012101847162A CN201210184716A CN102694518A CN 102694518 A CN102694518 A CN 102694518A CN 2012101847162 A CN2012101847162 A CN 2012101847162A CN 201210184716 A CN201210184716 A CN 201210184716A CN 102694518 A CN102694518 A CN 102694518A
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Abstract
The invention provides a manufacturing method for an acoustic surface wave element, belonging to the technical field of acoustic surface waves. The manufacturing method solves a problem that the yield in the current manufacturing method for the acoustic surface wave element is not high. The manufacturing method for the acoustic surface element comprises the following steps of: S1, vacuum magnetron-sputter coating, wherein the vacuum degree is controlled between 1.2*(10-7) and 2*(10-7) torr, the heating temperature is 400 DEG C at most, and the sputtering speed is 1.2um/min; S2, uniformly coating photosensitive resist; and S3, photoetching. The manufacturing method disclosed by the invention adopts a special process to manufacture the acoustic surface wave element, so that the yield of the acoustic surface wave element can be up to more than 95% in large-scale production by controlling the production precision and the production environment, materials are saved, and the large-scale popularization and application can be facilitated.
Description
Technical field
The present invention relates to the surface acoustic wave techniques field, relate in particular to a kind of preparation method of surface acoustic wave device.
Background technology
Surface acoustic wave device is to utilize surface acoustic wave the signal of telecommunication to be carried out the device of simulation process.SAW device mainly is made up of base material with piezoelectric property and the transducer of being made up of metallic film on the burnishing surface of this material, made.If add high frequency electrical signal at the transducer two ends; Then the piezoelectric substrate material surface can produce mechanical oscillation and inspire the surface acoustic wave identical with adding signal of telecommunication frequency simultaneously; This surface acoustic wave is propagated along substrate material surface, and is converted into the signal of telecommunication after another transducer reception.
Existing surface acoustic wave device is for constituting through having being etched on the base material of particular topology pattern; Yet because the topological pattern dimension on the surface acoustic wave device is less; Be generally micron level, adopt conventional etch process to cause its precision to reduce and the fraction defective rising.
Summary of the invention
Technical problem to be solved by this invention is, to the above-mentioned deficiency of prior art, proposes the preparation method of the surface acoustic wave device that a kind of preparation technology's precision is higher, yields is high.
The present invention solves the technical scheme that its technical problem adopts, and proposes a kind of preparation method of surface acoustic wave device, and it comprises step:
S1: vacuum magnetic-control sputtering plated film; During the vacuum magnetic-control sputtering plated film, vacuum degree control is at 1.2X10
-7To 2x10
-7Torr, heating-up temperature are up to 400 ℃, and sputtering rate is 1.2um/min;
S2: evenly be coated with photoresists;
S3: photoetching.
Further, will drip the substrate elder generation low speed rotation behind the photoresists among the step S2 earlier, make glue substrate surface is even open after high speed rotating again, rotary speed is that per minute 8,000 to 10,000 2 changes.
Further, photoetching comprises exposure, development and corrosion step; The time for exposure is 2-5 minute in the step of exposure, and exposure progression is the 7-10 level, and vacuum degree is 85%-99% during exposure; Developer solution is that concentration is the solution of potassium carbonate of 2%-5% during development, and development temperature is 28 to 32 ℃, and developing time is 10 to 50 seconds, and spray pressure is 0.5 to 1.5kg/cm
2Corrosive liquid is the potassium permanganate corrosive liquid in the corrosion step, and its component is the water of 350-450 milliliter, the potassium permanganate of 17-20 gram and the NaOH of 3-9 gram, and corrosion temperature is 32-45 ℃.
Further, between development and corrosion step, also comprise the post bake step, the substrate after will developing in the post bake step is put into the vacuum bakeout case and is toasted, and baking temperature is following 7-12 ℃ of a photoresists glass temperature range lower limit, and stoving time is 5-10 minute.
Further, also comprise and repair step frequently, in repairing frequently step, earlier the substrate after the photoetching is positioned in the plasma etching machine vacuum chamber, when vacuum is indoor vacuumize after, charge into and add radio-frequency voltage after reacting gas makes the pressure of vacuum chamber rise to the 5-7 handkerchief.
Further, reacting gas is by CF
4The gas that forms with oxygen mix, wherein CF
4Account for 80% mass ratio, oxygen accounts for 20% mass ratio; Radio-frequency power is preferably 380 to 420 watts.
The present invention is through adopting special process preparation sound surface element, makes the yields of surface acoustic wave device can reach more than 95% when the large-scale production through control production precision and production environment, economical with materials and be convenient to change on a large scale promotion and application.
Description of drawings
Fig. 1 is sound surface element preparation method's of the present invention process chart.
Embodiment
Below be specific embodiment of the present invention and combine accompanying drawing, technical scheme of the present invention is done further to describe, but the present invention is not limited to these embodiment.
Preparation method's flow chart of surface acoustic wave device of the present invention is as shown in Figure 1.The preparation method of surface acoustic wave device of the present invention comprises step:
S1: vacuum magnetic-control sputtering plated film.
Plated film is meant metal evenly is attached to on-chip step.Do not adopt the method for conventional evaporation vacuum coating among the present invention, and adopt the vacuum magnetic-control sputtering film plating process, it is compared conventional evaporation vacuum coating and has the advantage that rate of film build height, substrate temperature adhesiveness low, film are good, can realize large-area coating film.
The principle of vacuum magnetic-control sputtering plated film is: argon ion quickens the bombardment target under effect of electric field, sputter a large amount of target atom, is neutral target atom or target molecule deposition film forming on substrate.The material of target is chosen according to the material of the transducer on the surface acoustic wave device substrate surface.
In the present embodiment, during the vacuum magnetic-control sputtering plated film, vacuum degree control is at 1.2X10
-7To 2x10
-7Torr, heating-up temperature are up to 400 ℃, and sputtering rate is 1.2um/min.Feasible uniformity through the vacuum magnetic-control sputtering plated film is higher than 95%, and accuracy also is higher than 95%, and fragment rate is lower than 0.2%.
S2: evenly be coated with photoresists.
Evenly be coated with photoresists and be meant photoresists are coated on the substrate surface behind the step S1 plated film, that the glue-line that requires to apply adheres to is good, clean, evenly, the film thickness according with process requirements.
The present invention will be dripped the substrate elder generation low speed rotation behind the photoresists; Make glue substrate surface is even open after high speed rotating again, rotary speed is that per minute 8,000 to 10,000 2 changes, under centrifugal force and surface tension effects; Glue to around splash, remaining glue is uniformly distributed in substrate surface.Gluing thickness is 1/4th to 1/3rd of required response electromagnetic wavelength.
Photoresists can be selected DQN photoresists or PMMA photoresists for use.Wherein DQN glue be basis material N (being generally acid catalysis phenolic resins) with emulsion DQ (adjacent nitrine naphtoquinone compounds) according to (0.2-1): the photoresists PMMA photoresists that 1 ratio modulation forms are meant the photoresists of being processed by methacrylate and derivative thereof.
S3: photoetching.
Lithography step comprises exposure, develops and corrodes step by step several.
Making public is meant the substrate selection exposure of coating adhesive, thereby makes exposed portion generation chemical reaction change its solubility in developer solution, through developing on glued membrane, to show graph of a correspondence.The time for exposure is 2-5 minute in the present embodiment, and exposure progression is 7-10 level (adopting 21 grades of lighting level chis), and vacuum degree is 85%-99% during exposure.
Developer solution is chosen the solution of potassium carbonate that concentration is 2%-5% during development, and development temperature is 28 to 32 ℃, developing time 10 to 50 seconds, and spray pressure 0.5 is to 1.5kg/cm
2
Corrosion is meant the figure that dry-film resist has been displayed, and is complete, clear, etching is come out exactly.Adopt the potassium permanganate corrosive liquid in the present embodiment, corrosive liquid prepares through following method: in the water of 350-450 milliliter, add the potassium permanganate of 17-20 gram and the NaOH of 3-9 gram.Corrosion temperature during corrosion is 32-45 ℃.
Preferably, owing to developer solution can make dry-film resist softening, expansion takes place, make the adhesiveness variation of glued membrane and substrate, corrosion resistance reduces, and present embodiment also adds the post bake step between development and corrosion step.Post bake is meant and toasts substrate at a certain temperature to remove developer solution and the moisture in the glued membrane, improves its adhesiveness and corrosion stability.Substrate after present embodiment will develop is put into vacuum drying oven and is toasted, and baking temperature is following 7-12 ℃ of a photoresists glass temperature range lower limit, and stoving time is 5-10 minute.
Further, because the metallic pattern of the transducer that on substrate, forms behind the process step S1 to S3 not necessarily meets the demands, deviation possibly appear in each procedure, and for addressing the above problem, the present invention also repaiies step frequently behind step S3.Repair and frequently be meant the reduced thickness of metallic pattern or thickening so that the frequency that transducer responded meets the demands.
In the present embodiment, repair frequency step using plasma etching and repair frequently.Its concrete operation method is: the substrate after the photoetching is positioned on the parallel plate electrode in the plasma etching machine vacuum chamber, and negative electrode connects radio-frequency power supply, plus earth.After the vacuum room air is evacuated to vacuum, charge into reacting gas and make the pressure of vacuum chamber rise to add behind the 5-7 handkerchief radio-frequency voltage to make reacting gas ionization produce free electron and have chemically active ion and ion cluster, substrate is carried out etching.In the present embodiment, reacting gas is preferably by CF
4The gas that forms with oxygen mix, wherein CF
4Account for 80% mass ratio, oxygen accounts for 20% mass ratio; Radio-frequency power is preferably 380 to 420 watts.
For guaranteeing product quality and yield, all preferably need in the dustfree environment of strictness, operate in above-mentioned each step of the present invention, wherein photoetching process can be operated in the dustfree environment of 100 grades of purifications, and other steps all need in the dustfree environment of 1000 grades of purifications, to operate.
Through the surface acoustic wave device that above-mentioned prepared obtains, its yields all reaches more than 95% when large-scale production, economical with materials and help large-scale promotion and use.
Specific embodiment described herein only is that the present invention's spirit is illustrated.Person of ordinary skill in the field of the present invention can make various modifications or replenishes or adopt similar mode to substitute described specific embodiment, but can't depart from spirit of the present invention or surmount the defined scope of appended claims.
Claims (6)
1. the preparation method of a surface acoustic wave device is characterized in that: comprise step:
S1: vacuum magnetic-control sputtering plated film; During the vacuum magnetic-control sputtering plated film, vacuum degree control is at 1.2X10
-7To 2x10
-7Torr, heating-up temperature are up to 400 ℃, and sputtering rate is 1.2um/min;
S2: evenly be coated with photoresists;
S3: photoetching.
2. preparation method as claimed in claim 1 is characterized in that: will drip the substrate elder generation low speed rotation behind the photoresists among the step S2 earlier, make glue substrate surface is even open after high speed rotating again, rotary speed is that per minute 8,000 to 10,000 2 changes.
3. according to claim 1 or claim 2 preparation method, it is characterized in that: photoetching comprises exposure, development and corrosion step; The time for exposure is 2-5 minute in the step of exposure, and exposure progression is the 7-10 level, and vacuum degree is 85%-99% during exposure; Developer solution is that concentration is the solution of potassium carbonate of 2%-5% during development, and development temperature is 28 to 32 ℃, and developing time is 10 to 50 seconds, and spray pressure is 0.5 to 1.5kg/cm
2Corrosive liquid is the potassium permanganate corrosive liquid in the corrosion step, and its component is the water of 350-450 milliliter, the potassium permanganate of 17-20 gram and the NaOH of 3-9 gram, and corrosion temperature is 32-45 ℃.
4. preparation method as claimed in claim 3; It is characterized in that: between development and corrosion step, also comprise the post bake step; Substrate after will developing in the post bake step is put into the vacuum bakeout case and is toasted; Baking temperature is following 7-12 ℃ of a photoresists glass temperature range lower limit, and stoving time is 5-10 minute.
5. preparation method as claimed in claim 1; It is characterized in that: also comprise behind the step S3 and repair step frequently; In repairing the frequency step; Earlier the substrate after the photoetching is positioned in the plasma etching machine vacuum chamber, when vacuum is indoor vacuumize after, charge into and add radio-frequency voltage after reacting gas makes the pressure of vacuum chamber rise to the 5-7 handkerchief.
6. preparation method as claimed in claim 5, it is characterized in that: reacting gas is by CF
4The gas that forms with oxygen mix, wherein CF
4Account for 80% mass ratio, oxygen accounts for 20% mass ratio; Radio-frequency power is preferably 380 to 420 watts.
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| CN2012101847162A CN102694518A (en) | 2012-05-24 | 2012-05-24 | Manufacturing method for acoustic surface wave element |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102978621A (en) * | 2012-11-28 | 2013-03-20 | 北京中讯四方科技股份有限公司 | Wet etching method for aluminum film in surface acoustic wave device |
| CN103532510A (en) * | 2013-10-23 | 2014-01-22 | 无锡华普微电子有限公司 | Etching technology of SAW devices |
| CN104317171A (en) * | 2014-08-18 | 2015-01-28 | 北京中讯四方科技股份有限公司 | A prebaking method of a surface acoustic wave device in a photoetching process |
| CN104833410A (en) * | 2015-05-11 | 2015-08-12 | 天津理工大学 | Method for measuring surface acoustic wave velocity of piezoelectric material |
| CN112003582A (en) * | 2020-07-31 | 2020-11-27 | 江苏晋誉达半导体股份有限公司 | Forming process of surface acoustic wave filter |
| CN113257662A (en) * | 2021-07-14 | 2021-08-13 | 苏州汉天下电子有限公司 | Semiconductor device and manufacturing method thereof |
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| CN1139840A (en) * | 1994-12-06 | 1997-01-08 | 株式会社村田制作所 | Electrode forming method for surface acoustic wave device |
| CN101382522A (en) * | 2008-08-26 | 2009-03-11 | 北京中科飞鸿科技有限公司 | Preparation method of surface acoustic wave sensor chip for gas detection |
| CN102060260A (en) * | 2010-11-26 | 2011-05-18 | 中国科学院上海技术物理研究所 | Micromechanical structure device production method taking tin as sacrifice layer |
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2012
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| CN1139840A (en) * | 1994-12-06 | 1997-01-08 | 株式会社村田制作所 | Electrode forming method for surface acoustic wave device |
| CN101382522A (en) * | 2008-08-26 | 2009-03-11 | 北京中科飞鸿科技有限公司 | Preparation method of surface acoustic wave sensor chip for gas detection |
| CN102060260A (en) * | 2010-11-26 | 2011-05-18 | 中国科学院上海技术物理研究所 | Micromechanical structure device production method taking tin as sacrifice layer |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102978621A (en) * | 2012-11-28 | 2013-03-20 | 北京中讯四方科技股份有限公司 | Wet etching method for aluminum film in surface acoustic wave device |
| CN103532510A (en) * | 2013-10-23 | 2014-01-22 | 无锡华普微电子有限公司 | Etching technology of SAW devices |
| CN103532510B (en) * | 2013-10-23 | 2016-08-17 | 无锡华普微电子有限公司 | A kind of etching process of SAW device |
| CN104317171A (en) * | 2014-08-18 | 2015-01-28 | 北京中讯四方科技股份有限公司 | A prebaking method of a surface acoustic wave device in a photoetching process |
| CN104833410A (en) * | 2015-05-11 | 2015-08-12 | 天津理工大学 | Method for measuring surface acoustic wave velocity of piezoelectric material |
| CN112003582A (en) * | 2020-07-31 | 2020-11-27 | 江苏晋誉达半导体股份有限公司 | Forming process of surface acoustic wave filter |
| CN112003582B (en) * | 2020-07-31 | 2024-06-11 | 江苏晋誉达半导体股份有限公司 | Forming process of surface acoustic wave filter |
| CN113257662A (en) * | 2021-07-14 | 2021-08-13 | 苏州汉天下电子有限公司 | Semiconductor device and manufacturing method thereof |
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Application publication date: 20120926 |