CN102060260A - Micromechanical structure device production method taking tin as sacrifice layer - Google Patents
Micromechanical structure device production method taking tin as sacrifice layer Download PDFInfo
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- CN102060260A CN102060260A CN 201010565106 CN201010565106A CN102060260A CN 102060260 A CN102060260 A CN 102060260A CN 201010565106 CN201010565106 CN 201010565106 CN 201010565106 A CN201010565106 A CN 201010565106A CN 102060260 A CN102060260 A CN 102060260A
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Abstract
The invention discloses a micromechanical structure device production method taking tin as a sacrifice layer. The micromechanical structure device production method comprises the following steps of: realizing the surface planarization of the sacrifice layer by taking tin as the sacrifice layer and adopting a method for melting the tin by heating a substrate; etching the tin sacrifice layer by adopting a wet etching method so as to form the sacrifice layer; making various micromechanical structure patterns on the surface of the sacrifice layer, and then placing the substrate into dry ice liquid to enable the sacrifice layer to be powdered and separated from the substrate so as to realize that the suspension of a micromechanical structure. The sacrifice layer is removed by adopting a physical method without generating chemical etching action on materials of the suspended micromechanical structure, therefore the invention can enhance the qualification rate of the micromechanical structure device and is beneficial to large-scale production.
Description
Technical field
The present invention relates to micro mechanical structure device technology of preparing, particularly a kind of is the micro mechanical structure device preparation method of sacrifice layer with tin.
Background technology
In the micro mechanical structure device, comprise a large amount of hanging structures, comprise arm, beam, film etc.These hanging structures adopt " sacrifice layer " technology to make usually, and the structure preparation earlier that is about to need to make somebody a mere figurehead is on sacrifice layer, and after sacrifice layer was removed, these arms, beam, film were just natural in unsettled.Existing sacrificial layer material comprises materials such as Si, SiO2, PI, BPSG and Al, Ti, and they adopt dry etching or wet etching method to remove.But its essence of dry etching or wet etching method is with process gas or liquid and sacrificial layer material generation chemical reaction, reaches the removal purpose.When removing sacrifice layer, structural materials such as arm, beam, film are easy to be subjected to the erosion of reacting gas or liquid and impaired, cause the device qualification rate to reduce.
Summary of the invention
The present invention seeks to propose a kind of is the micro mechanical structure device preparation method of sacrifice layer with tin.This method adopts physical means to remove the tin sacrifice layer, and chemical reaction does not take place the removal process, can solve the problem that the micro mechanical structure that causes when other type sacrifice layer adopts dry etching or wet etching to remove is subjected to process gas or corroded by liquid.
Among the present invention, adopt tin as sacrificial layer material.Because tin exists with the cubic structure metallic state at normal temperatures, when temperature was lower than 13.2 ℃, tin just was converted into the diamond lattic structure powdered form by metallic state.Therefore, when adopting tin to make sacrifice layer, keep a period of time as long as device is lower than in 13.2 ℃ of environment in temperature, tin will become powder, is easy to remove from device.The present invention has utilized the physical characteristic of tin, makes the removal technical process of sacrifice layer that any chemical reaction not take place, and can effectively solve sacrifice layer and adopt impaired problem, improves the qualification rate of device.
A kind of is the micro mechanical structure device preparation method of sacrifice layer with tin.Its process characteristic is to deposit pure tin as sacrifice layer in substrate; The heating substrate makes the tin fusing, realizes the sacrificial layer surface planarization; Adopt wet etching method corrosion tin sacrifice layer, sacrifice layer is shaped; Sacrificial layer surface places dry ice liquid with substrate after preparing arm, beam, film figures, makes the sacrifice layer powdered and breaks away from substrate, realizes that arm, beam, film are isostructural unsettled.
Processing step of the present invention is as follows:
1, in substrate, adopt the method deposit tin sacrifice layer of vacuum thermal evaporation or magnetron sputtering, the purity of tin＞99.9%, the base vacuum of vacuum thermal evaporation system or magnetic control sputtering system is better than 1 * 10
-3Pa, the process gas of magnetic control sputtering system are Ar gas;
2, place vacuum cavity to vacuumize substrate, the system vacuum degree is better than 1 * 10
-3Behind the Pa, substrate is heat temperature raising gradually, keeps 3min after temperature reaches 235-240 ℃, reduces base reservoir temperature then in a vacuum until room temperature, realizes the planarization of tin sacrificial layer surface;
3, negative photoresist to the photoetching of tin sacrifice layer after, be HF: H2O=1 with proportioning: 1 solution corrosion tin sacrifice layer, make its shaping, in O2, remove negative photoresist with equipment for burning-off photoresist by plasma again;
4, adopt the micromachined manufacture method, prepare various micro mechanical structures in sacrificial layer surface.The preparation temperature of various micro mechanical structures must be lower than 230 ℃, avoids the sacrifice layer fusing;
5, substrate is placed dry ice liquid, and stir dry ice liquid.After the sacrifice layer powdered, displacement dry ice liquid 3-5 time all breaks away from the sacrifice layer powder that is attached on the micro mechanical structure.
Wherein, the material of sacrifice layer is a tin, and its purity＞99.9% if purity is not high enough or be subjected to severe contamination, can cause the fusion temperature of tin to change, and the critical-temperature point reduction of tin when removing.
Wherein, tin adopts the method for vacuum thermal evaporation or magnetron sputtering to be deposited on substrate surface.The base vacuum of vacuum thermal evaporation system or sputtering system is better than 1 * 10
-3Pa, the process gas of sputtering system are Ar gas.
Wherein, after the sacrifice layer deposition, to having an even surface of tin.Place vacuum cavity to vacuumize substrate, the system vacuum degree is better than 1 * 10
-3Behind the Pa, substrate is heat temperature raising gradually, keeps 3min after temperature reaches 235-240 ℃, reduces base reservoir temperature then in a vacuum until room temperature.
Wherein, tin is carried out the figure photoetching adopt negative photoresist, equipment for burning-off photoresist by plasma is removed negative photoresist in O2.
Wherein, wet etching method is adopted in the shaping of tin sacrifice layer.Corrosive liquid is HF: H2O=1: 1 solution, etching time is determined according to the thickness of deposition.
Wherein, after sacrifice layer is shaped, adopt the micromachined manufacture method, prepare various micro mechanical structures in sacrificial layer surface.The preparation temperature of various micro mechanical structures must be lower than 230 ℃, avoids the sacrifice layer fusing.
Wherein, when sacrifice layer is removed, substrate is placed dry ice liquid, and stir dry ice liquid, make the sacrifice layer powder deposition in dry ice liquid.In order to ensure that the sacrifice layer powder is not attached on substrate and the hanging structure, need displacement dry ice liquid 3-5 time.
The invention has the advantages that: it can improve the product percent of pass of micro mechanical structure device, reduces production costs, and is suitable for device production in enormous quantities.
Description of drawings
Fig. 1 is a process chart of the present invention, among the figure:
1-1 figure is at substrate surface deposit tin sacrifice layer;
1-2 figure is the planarization of tin sacrificial layer surface;
1-3 figure is shaped for the tin sacrifice layer corrosion;
1-4 figure is the manufacturing of tin sacrificial layer surface micro mechanical structure;
1-5 figure removes for the tin sacrifice layer, realizes that micro mechanical structure is unsettled.
The specific embodiment
In order to further specify content of the present invention, below in conjunction with accompanying drawing the present invention is done detailed description, wherein:
1, as Figure 1-1, in substrate 101, adopt thermal evaporation or magnetically controlled sputter method deposit tin sacrifice layer 102.The base vacuum of thermal evaporation or magnetic control sputtering system need be better than 1 * 10
-3Pa, the thickness of tin sacrifice layer 102 is determined according to the specific requirement of micro mechanical structure device.
2, shown in Fig. 1-2, substrate 101 is placed vacuum cavity, vacuumize, make the system vacuum degree be better than 1 * 10
-3Pa, substrate 101 is heat temperature raising progressively, keeps 3min after temperature reaches 235-240 ℃, reduces substrate 101 temperature then until room temperature, realizes 102 planarizations of substrate surface tin sacrifice layer.
3, as Figure 1-3, tin sacrifice layer 102 is carried out the figure photoetching.After adopting negative photoresist to make the sacrifice layer figure by lithography, use HF: H2O=1: 1 corrosive liquid corrosion tin sacrifice layer 102, etching time is determined according to deposit thickness, etches the back and removes negative photoresist with equipment for burning-off photoresist by plasma in O2.
4, shown in Fig. 1-4, adopt the micromachined manufacture method, prepare various micro mechanical structures in sacrificial layer surface.The preparation temperature of various micro mechanical structures must be lower than 230 ℃, avoids the sacrifice layer fusing.
5, shown in Fig. 1-5, substrate is placed dry ice liquid, and stir dry ice liquid, make tin sacrifice layer 102 powder depositions in dry ice liquid.In order to ensure that tin sacrifice layer 102 powder are not attached on substrate 101 and the micro mechanical structure 103, need displacement dry ice liquid 3-5 time.
This method can reduce the damage in process of production of micro mechanical structure device products, improves product percent of pass, is suitable for extensive micro mechanical structure device production.
Claims (1)
1. one kind is the micro mechanical structure device preparation method of sacrifice layer with tin, it is characterized in that may further comprise the steps:
1) the method deposit tin sacrifice layer of employing vacuum thermal evaporation or magnetron sputtering in substrate, wherein, the purity of tin is better than 99.9%, and the base vacuum of vacuum thermal evaporation system or magnetic control sputtering system is better than 1 * 10
-3Pa, the process gas of sputtering system are Ar gas;
2) place vacuum cavity to vacuumize substrate, the system vacuum degree is better than 1 * 10
-3Behind the Pa, substrate is heat temperature raising gradually, keeps 3min after temperature reaches 235-240 ℃, reduces base reservoir temperature then in a vacuum until room temperature, realizes the planarization of tin sacrificial layer surface;
3) negative photoresist to the photoetching of tin sacrifice layer after, be HF: H2O=1 with proportioning: 1 solution corrosion tin sacrifice layer, make its shaping, in O2, remove negative photoresist with equipment for burning-off photoresist by plasma again;
4) be lower than 230 ℃ at preparation temperature, guarantee under not fusing of the sacrifice layer situation, adopt the micromachined manufacture method, prepare various micro mechanical structures in sacrificial layer surface;
5) substrate that will prepare micro mechanical structure places dry ice liquid, and stirs dry ice liquid.After the sacrifice layer powdered, displacement dry ice liquid 3-5 time all breaks away from the sacrifice layer powder that is attached on the micro mechanical structure.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102694518A (en) * | 2012-05-24 | 2012-09-26 | 台州欧文电子科技有限公司 | Manufacturing method for acoustic surface wave element |
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| JP2002124760A (en) * | 2000-10-13 | 2002-04-26 | Kansai Tlo Kk | Detaching material for soldering joint |
| US6737225B2 (en) * | 2001-12-28 | 2004-05-18 | Texas Instruments Incorporated | Method of undercutting micro-mechanical device with super-critical carbon dioxide |
| CN101030033A (en) * | 2007-03-30 | 2007-09-05 | 华东师范大学 | Production of MEMS suspending structure by laminated photoetching glue victim layer |
| CN101382522A (en) * | 2008-08-26 | 2009-03-11 | 北京中科飞鸿科技有限公司 | Preparation method of surface acoustic wave sensor chip for gas detection |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002124760A (en) * | 2000-10-13 | 2002-04-26 | Kansai Tlo Kk | Detaching material for soldering joint |
| US6737225B2 (en) * | 2001-12-28 | 2004-05-18 | Texas Instruments Incorporated | Method of undercutting micro-mechanical device with super-critical carbon dioxide |
| CN101030033A (en) * | 2007-03-30 | 2007-09-05 | 华东师范大学 | Production of MEMS suspending structure by laminated photoetching glue victim layer |
| CN101382522A (en) * | 2008-08-26 | 2009-03-11 | 北京中科飞鸿科技有限公司 | Preparation method of surface acoustic wave sensor chip for gas detection |
Non-Patent Citations (2)
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| 《化学元素周期系》 20000731 车云霞 化学元素周期系 南开大学出版社 第91-92页，第109-110页 , 1 * |
| 《现代制造工程》 20070930 吴晓，等 基于MEMS牺牲层技术的发展现状 第86-88页，第116页 , 第9期 2 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102694518A (en) * | 2012-05-24 | 2012-09-26 | 台州欧文电子科技有限公司 | Manufacturing method for acoustic surface wave element |
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