CN102694031B - Variable capacitance diode capable of improving frequency resolution of numerically controlled oscillator - Google Patents
Variable capacitance diode capable of improving frequency resolution of numerically controlled oscillator Download PDFInfo
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- CN102694031B CN102694031B CN201210181417.3A CN201210181417A CN102694031B CN 102694031 B CN102694031 B CN 102694031B CN 201210181417 A CN201210181417 A CN 201210181417A CN 102694031 B CN102694031 B CN 102694031B
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- controlled oscillator
- effect transistor
- numerically controlled
- frequency resolution
- mos field
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Abstract
The invention belongs to the technical field of integrated circuit and particularly relates to a variable capacitance diode capable of improving frequency resolution of a numerically controlled oscillator. Since discrete frequency points output by the numerically controlled oscillator introduce additional quantization noises, in order to guarantee that the quantization noises do not obviously influence system performance, the frequency resolution of the numerically controlled oscillator is required to be very fine. By connecting the source end and the body end of a single P-type metal oxide semiconductor field-effect transistor to a power supply or connecting the source end and the body end of the single P-type metal oxide semiconductor field-effect transistor to ground level, a fine tunable variable capacitance diode is formed, control voltage is connected to a drain end and output capacitance is obtained at a grid end. The variable capacitance diode can improve the frequency resolution of the numerically controlled oscillator, so as to reduce the quantization noises introduced by the numerically controlled oscillator.
Description
Technical field
The invention belongs to technical field of integrated circuits, be specifically related to a kind of varactor improving NCO frequency resolution, can be used for all-digital phase-locked loop, frequency synthesizer etc. needs to carry out in the digital-analog mix-mode chip of fine tuning.
Background technology
Along with CMOS technology enters nanometer era; the reduction of process and the increase of integrated level; the design and devdlop of hybrid digital-analog integrated circuit is more and more extensive, and such as, the all-digital phase-locked loop adapted with small size semiconductor technology development trend substitutes charge pump phase lock loop.Digital controlled oscillator is one of important module in hybrid digital-analog integrated circuit.But the frequency that digital controlled oscillator exports is discrete, so can introduce extra quantizing noise.In order to ensure that this quantizing noise can not the performance of appreciable impact system, digital controlled oscillator needs very meticulous frequency resolution.
Summary of the invention
The object of the present invention is to provide a kind of varactor that can realize meticulous capacitance tuning, improve the frequency resolution of digital controlled oscillator, thus reduce the quantizing noise of digital controlled oscillator introducing.
Varactor provided by the invention, is made up of single metal oxide semiconductor field effect transistor.Described mos field effect transistor can have two kinds of forms: P-type mos field-effect transistor and N-type mos field effect transistor; When being made up of single P-type mos field-effect transistor, this transistor source and body end are all connected to power supply, and control voltage is connected to drain terminal, and output capacitance obtains at grid end; When being made up of single N-type mos field effect transistor, this transistor source and body end are all connected to ground, and control voltage is connected to drain terminal, and output capacitance obtains at grid end.
Varactor of the present invention, make use of the difference of gate capacitance when mos field effect transistor is operated in linear zone and saturation region, realize meticulous capacitance tuning, improve the frequency resolution of digital controlled oscillator, thus reduce the quantizing noise of digital controlled oscillator introducing.
Accompanying drawing explanation
The varactor that Fig. 1 is made up of single P-type mos field-effect transistor.
The varactor that Fig. 2 is made up of single N-type mos field effect transistor.
(size of P-type mos field-effect transistor gets 0.13 to the C-V characteristics of the varactor that Fig. 3 is made up of single P-type mos field-effect transistor
μminimum dimension in m CMOS technology).
(N-type mos field effect transistor gets 0.13 to the C-V characteristics of the varactor that Fig. 4 is made up of single N-type mos field effect transistor
μminimum dimension in m technique).
Fig. 5 digital controlled oscillator topological structure.
The cellular construction of the digital control coarse tuning capacitor array of Fig. 6.
The cellular construction row of the digital control medium tuning capacitance array of Fig. 7.
The cellular construction of the digital control fine tuning capacitor array of Fig. 8.
Fig. 9 fine tuning curve (near 3087MHz frequency).
Number in the figure: 501 is digital control coarse tuning capacitor array; 502 is digital control medium tuning capacitance array, and 503 is digital control fine tuning capacitor array.
Embodiment
As shown in Figure 1, be the varactor be made up of single P-type mos field-effect transistor.Its source and body end are all connected to power supply, and control voltage is connected to drain terminal, and output capacitance obtains at grid end.
As shown in Figure 2, be the varactor be made up of single N-type mos field effect transistor.Its source and body end are all connected to ground, and control voltage is connected to drain terminal, and output capacitance obtains at grid end.
The following describes the operation principle of varactor provided by the invention.
As shown in Figure 3, be that (P-type mos field-effect transistor gets 0.13 for the C-V characteristics of the varactor be made up of single P-type mos field-effect transistor
μminimum dimension in m technique).When control voltage be 1.2V, P type varactor be in the region 1 in Fig. 3 time, P-type mos field-effect transistor is operated in linear zone, and its electric capacity can be expressed as:
Wherein,
wwith
lrepresent that the grid of mos field effect transistor are long and wide,
c ox the gate oxide capacitance of representation unit area,
c ov the overlap capacitance of representation unit width.When control voltage be 0V, P type varactor be in the region 1 in Fig. 3 time, P-type mos field-effect transistor is operated in saturation region, and its electric capacity can be expressed as:
When P type varactor is in the region 2 in Fig. 3, no matter control voltage is 1.2V or 0V, and P-type mos field-effect transistor all works and is in depletion-mode, and its capacitance remains on smaller value.
From formula (1) and (2), when control voltage changes between high and low level, in the present invention the capacitance step of P type varactor be about 1/3* (
w*
l*
c ox ).The average electrical capacitance variable quantity of two states to be compared with transoid varactor with standard varactor and is greatly reduced, thus can improve the frequency resolution of digital controlled oscillator.
As shown in Figure 4, be that (N-type mos field effect transistor gets 0.13 for the C-V characteristics of the varactor be made up of single N-type mos field effect transistor
μminimum dimension in m technique).When control voltage be 0V, N-type varactor be in the region 1 in Fig. 4 time, N-type mos field effect transistor is operated in linear zone, and its electric capacity can be expressed as formula (1).When control voltage be 1.2V, N-type varactor be in the region 1 in Fig. 4 time, N-type mos field effect transistor is operated in saturation region, and its electric capacity can be expressed as formula (2).When N-type varactor is in the region 2 in Fig. 4, no matter control voltage is 1.2V or 0V, and N-type mos field effect transistor all works and is in depletion-mode, and its capacitance remains on smaller value.
From formula (1) and (2), when control voltage changes between high and low level, in the present invention the capacitance step of N-type varactor be about 1/3* (
w*
l*
c ox ), the average electrical capacitance variable quantity of two states to be compared with transoid varactor with standard varactor and is greatly reduced, thus can improve the frequency resolution of digital controlled oscillator.
Provide the example of an application below.As shown in Figure 5, this example circuit is that the varactor in the present invention is applied in digital controlled oscillator, digital controlled oscillator adopts the NP complementary type oscillator structure of P type current source bias, and tuning capacitance is made up of three partition capacitance arrays: digital control coarse tuning capacitor array (in Fig. 5 label 501), digital control medium tuning capacitance array (in Fig. 5 label 502) and digital control fine tuning capacitor array (in Fig. 5 label 503).Figure 6 shows that the cellular construction of digital control coarse tuning capacitor array, be made up of the MIM capacitor of switch control rule.The switch of N-type mos field effect transistor composition is by digital signal C
ncarry out controlling.Figure 7 shows that the cellular construction of digital control medium tuning capacitance array, P-type mos field-effect transistor forms traditional transoid varactor, by digital signal M
ncontrol.Figure 8 shows that the cellular construction of digital control fine tuning capacitor array, have employed the P type varactor that the present invention proposes, by digital signal F
ncontrol.Near 3087MHz frequency, use Spectre to emulate the fine tuning curve that obtains as shown in Figure 9, average frequency resolution is about 17kHz.
Claims (1)
1. can improve a varactor for NCO frequency resolution, it is characterized in that being made up of single metal oxide semiconductor field effect transistor; Described mos field effect transistor has two kinds of forms: P-type mos field-effect transistor and N-type mos field effect transistor; When being made up of single P-type mos field-effect transistor, this transistor source and body end are all connected to power supply, and control voltage is connected to drain terminal, and output capacitance obtains at grid end; When being made up of single N-type mos field effect transistor, this transistor source and body end are all connected to ground, and control voltage is connected to drain terminal, and output capacitance obtains at grid end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210181417.3A CN102694031B (en) | 2012-06-05 | 2012-06-05 | Variable capacitance diode capable of improving frequency resolution of numerically controlled oscillator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210181417.3A CN102694031B (en) | 2012-06-05 | 2012-06-05 | Variable capacitance diode capable of improving frequency resolution of numerically controlled oscillator |
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| CN102694031A CN102694031A (en) | 2012-09-26 |
| CN102694031B true CN102694031B (en) | 2015-05-13 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1610246A (en) * | 2003-10-17 | 2005-04-27 | 松下电器产业株式会社 | Voltage controlled variable capacitor |
| CN101290935A (en) * | 2007-04-16 | 2008-10-22 | 恩益禧电子股份有限公司 | Semiconductor device |
| CN101626222A (en) * | 2008-07-07 | 2010-01-13 | 阿尔特拉公司 | Adjustable electrical components formed from arrays of differential circuit elements |
| CN101662281A (en) * | 2009-09-10 | 2010-03-03 | 上海交通大学 | Inductance-capacitance numerical control oscillator |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1155949A (en) * | 1995-05-31 | 1997-07-30 | 塞瑞斯逻辑公司 | Voltage controlled oscillator including voltage controlled delay circuit with power supply noise isolation |
| KR100492280B1 (en) * | 2003-07-11 | 2005-05-30 | 한국과학기술원 | Circuit Using Vertical Bipolar Junction Transistor Available in Deep n-well CMOS Technology as a Current Source |
| JP2007336254A (en) * | 2006-06-15 | 2007-12-27 | Oki Electric Ind Co Ltd | Voltage controlled oscillator |
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2012
- 2012-06-05 CN CN201210181417.3A patent/CN102694031B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1610246A (en) * | 2003-10-17 | 2005-04-27 | 松下电器产业株式会社 | Voltage controlled variable capacitor |
| CN101290935A (en) * | 2007-04-16 | 2008-10-22 | 恩益禧电子股份有限公司 | Semiconductor device |
| CN101626222A (en) * | 2008-07-07 | 2010-01-13 | 阿尔特拉公司 | Adjustable electrical components formed from arrays of differential circuit elements |
| CN101662281A (en) * | 2009-09-10 | 2010-03-03 | 上海交通大学 | Inductance-capacitance numerical control oscillator |
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