CN102693952A - Packaging structure of TVS diode and method for manufacturing TVS diode - Google Patents
Packaging structure of TVS diode and method for manufacturing TVS diode Download PDFInfo
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- CN102693952A CN102693952A CN2011100718028A CN201110071802A CN102693952A CN 102693952 A CN102693952 A CN 102693952A CN 2011100718028 A CN2011100718028 A CN 2011100718028A CN 201110071802 A CN201110071802 A CN 201110071802A CN 102693952 A CN102693952 A CN 102693952A
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- tvs diode
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- lead frame
- diode chip
- conducting strip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The invention discloses a packaging structure of a transient voltage suppressor (TVS) diode. The packaging structure comprises a lead frame, a TVS diode chip, and a conducting plate. More specifically, the lead frame includes a lead frame main body and a first pin; two poles of the TVS diode chip are at the right side and the back side of the TVS diode chip, the TVS diode chip is on a bearing surface of the lead frame main body, and the back side of the TVS diode chip is electrically connected with the bearing surface of the lead frame main body; and the conducting plate includes a conducting plate main body that is arranged at the right side of the TVS diode chip and is electrically connected with the right side of the TVS diode chip and a second pin that is electrically connected with the first pin. The TVS diode chip, the lead frame main body and the conducting chip are sealed in resin. In addition, the invention discloses a method for manufacturing a TVS diode. Because a two-segment structure is employed, when the first pin is trimmed/bent subsequently, stress applied on the TVS diode chip is reduced, product reliability of the TVS diode is improved and service life of the TVS diode is prolonged.
Description
Technical field
The present invention relates to the manufacturing technology field of semiconductor device, is specifically related to a kind of encapsulating structure and manufacture method of TVS diode.
Background technology
Transient voltage restraining diode (Transient Voltage Suppressor) is called for short the TVS diode, is a kind of high-effect protection device of diode.When the two poles of the earth of TVS diode receive reverse transient state high energy impact events; It can reduce its impedance with high speed (being up to 10 negative 12 power second-times) suddenly; Absorb a big electric current simultaneously; With the voltage clamp between its two ends on a predetermined numerical value, thereby the circuit element of guaranteeing the back is avoided the high-octane impact of transient state and is damaged.
At present, in the block TVS diode production technology, the conducting strip of the electrodes use one of TVS diode is drawn the signal of telecommunication, and its production procedure is: welding, pressing mold, T/F (pruning/bending) moulding, baking, test, QC check, warehouse-in.Concrete steps are spot printing tin creams on lead frame, and with TVS diode crystal particle filling, spot printing tin cream on the TVS diode fixedly is connected electrically in conducting strip on the TVS diode then, mould are combined again and put into soldering furnace and weld; Send pressing mold station pressing mold then; Get into the T/F process after the pressing mold, promptly the pressing mold semi-finished product that are cascaded are carried out pin and prune and bend, become single molding massive TVS diode; Toast with high temperature again, carry out testing electrical property and check then, at last warehouse-in.Owing to the T/F process is pruned and bending can make block TVS impacted to produce stress, so that drive bonding pad in the terminal colloid of pin, cause the TVS diode crystal particle impaired easily, thus cause reliability of products to reduce and useful life not long.
Summary of the invention
The present invention produces stress because pruning and bending can make block TVS diode impacted for solving in the prior art in the TVS diode production technology; So that drive bonding pad in the terminal colloid of pin; Cause crystal grain impaired problem easily, significantly slow down owing to prune and bend the encapsulating structure and the manufacture method of the TVS diode that brings impulsive force thereby provide a kind of.
For solving the problems of the technologies described above, the present invention provides following technical scheme:
A kind of encapsulating structure of TVS diode comprises: lead frame comprises the lead frame body and first pin; The TVS diode chip for backlight unit, the two poles of the earth of this TVS diode chip for backlight unit are positioned at the front and back of TVS diode chip for backlight unit, and said TVS diode chip for backlight unit is positioned on the loading end of lead frame body, and the back side of TVS diode chip for backlight unit is electrically connected with the loading end of lead frame body; Conducting strip, said conducting strip comprise the conducting strip body and second pin, and said conducting strip body is arranged at TVS diode chip for backlight unit front and is electrically connected with the TVS diode chip for backlight unit is positive, and second pin is electrically connected with said first pin; TVS diode chip for backlight unit, lead frame body and conducting strip all are sealed in the resin.
The present invention also provides a kind of manufacture method of TVS diode, may further comprise the steps: step 1: lead frame is provided, and this lead frame comprises the lead frame body and first pin; Step 2: place on the lead frame body TVS diode chip for backlight unit and fixing the electrical connection; Step 3: conducting strip is provided, and said conducting strip comprises the conducting strip body and second pin; Step 4: with the conducting strip body-fixed and be connected electrically on the TVS diode chip for backlight unit, said second pin is electrically connected with said first pin; Step 5: TVS diode chip for backlight unit, lead frame body and conducting strip all are sealed in the resin, and pruning/bending first pin.
Compared with prior art; The present invention has following beneficial effect: the encapsulating structure of a kind of TVS diode provided by the invention and manufacture method, and TVS diode chip for backlight unit front electrode is electrically connected with first pin through the conducting strip body and second pin, adopts the two-part structure like this; Make when follow-up pruning/bending first pin; Reduce the stress that the TVS diode chip for backlight unit is received, improved the product reliability of TVS diode, and prolonged the TVS diode service life.
Description of drawings
Fig. 1 is a lead frame structure sketch map in the embodiment of the invention.
Fig. 2 places TVS diode chip for backlight unit sketch map on the lead frame in the embodiment of the invention.
Fig. 3 places the conducting strip sketch map on the TVS diode chip for backlight unit in the embodiment of the invention.
Fig. 4 is that embodiment of the invention lead frame is sealed in sketch map in the resin.
Fig. 5 is the TVS diode sketch map after the embodiment of the invention pruning/bending.
Embodiment
Clearer for technical problem, technical scheme and beneficial effect that the present invention is solved, below in conjunction with accompanying drawing and embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Fig. 3 places the conducting strip sketch map on the TVS diode chip for backlight unit in the embodiment of the invention, can be clearly seen that the encapsulating structure of TVS diode, and comprising: lead frame 10 comprises the lead frame body 12 and first pin 11; The TVS diode chip for backlight unit; Shown in TVS diode chip for backlight unit 20 among Fig. 2; The two poles of the earth of this TVS diode chip for backlight unit 20 are positioned at the front and back of TVS diode chip for backlight unit; Said TVS diode chip for backlight unit 20 is positioned on the loading end of lead frame body 12, and the back side of TVS diode chip for backlight unit 20 is electrically connected with the loading end of lead frame body 12; Conducting strip 30, said conducting strip 30 comprise the conducting strip body 32 and second pin 31, and said conducting strip body 32 is arranged at TVS diode chip for backlight unit 20 fronts and TVS diode chip for backlight unit 20 positive electrical connections, and second pin 31 is electrically connected with said first pin 11; Conducting strip body 32 is provided with plurality of grooves 33 with TVS diode chip for backlight unit 20 unconnected one sides, can increase heat sinking function.TVS diode 20, lead frame body 12 and conducting strip 30 all are sealed in the resin 40, and be as shown in Figure 4.TVS diode chip for backlight unit front electrode is electrically connected with first pin through the conducting strip body and second pin; Adopt the two-part structure like this; Make when follow-up pruning/bending first pin; Reduce the stress that the TVS diode chip for backlight unit is received, improved the product reliability of TVS diode, and prolonged the TVS diode service life.
In the present embodiment, the thickness of conducting strip body 32 is greater than the thickness of second pin 31, and the thickness of conducting strip body 32 is 4 to 5 millimeters, and the thickness of second pin 31 is 0.7 to 1 millimeter.The thickness of the conducting strip body 32 that contacts with TVS diode 20 is thicker, can well dispel the heat, and second pin 31 is thinner relatively, can be so that the thickness of final packaging meets the requirements.These conducting strip 30 general copper sheets of selecting, second pin 31 is at least one, is preferably two; Can make its better connection so that when pruning/bending, reduce the stress between first pin and second pin.The loading end of the back side of TVS diode chip for backlight unit and lead frame body, the TVS diode is positive positive with the TVS diode, and said second pin and first pin all are electrically connected through scolding tin.
The manufacture method of TVS diode below is described, is may further comprise the steps:
Step 1: lead frame 10 is provided, and as shown in Figure 1, lead frame structure sketch map in the embodiment of the invention, this lead frame 10 comprise the lead frame body 12 and first pin 11, if this first pin 11 is not connected with lead frame body 12 after shearing.
Step 2: place on the lead frame body TVS diode chip for backlight unit and fixing the electrical connection; Fig. 2 places TVS diode chip for backlight unit sketch map on the lead frame in the embodiment of the invention; The two poles of the earth of this TVS diode chip for backlight unit 20 are positioned at the front and back of TVS diode chip for backlight unit 20; TVS diode chip for backlight unit 20 is positioned on the loading end of lead frame body 12, and the back side of TVS diode chip for backlight unit 20 is electrically connected with the loading end of lead frame body 12; This method is spot printing tin cream on the loading end of lead frame body 12 directly, TVS diode chip for backlight unit 20 is aimed to be placed on the loading end of lead frame body 12 then.
Step 3: conducting strip is provided, and said conducting strip comprises the conducting strip body and second pin, and conducting strip body 32 second pins 31 of this conducting strip 30 link to each other.
Step 4: with the conducting strip body-fixed and be connected electrically on the TVS diode chip for backlight unit, said second pin is electrically connected with said first pin; Fig. 3 places the conducting strip sketch map on the TVS diode chip for backlight unit in the embodiment of the invention; With TVS diode chip for backlight unit 20 front spot printing tin creams; Spot printing tin cream on first pin 11 and second pin 31 simultaneously, then with conducting strip body 32 and with TVS diode chip for backlight unit 20 positive face and above being placed on, and first pin 11 and second pin 31 that will be coated with tin cream overlap; Then integral body is put into reflow soldering and carry out Reflow Soldering, with the part firm welding of spot printing tin cream.Conducting strip body 32 is provided with plurality of grooves 33 with TVS diode chip for backlight unit 20 unconnected one sides, can increase heat sinking function.
Step 5: TVS diode chip for backlight unit, lead frame body and conducting strip all are sealed in the resin, and pruning/bending first pin.Fig. 4 is that embodiment of the invention lead frame is sealed in sketch map in the resin, send mould envelope machine to encapsulate TVS diode chip for backlight unit 20, conducting strip 30 and the lead frame 10 of firm welding, generally uses resin-encapsulated; In high-temperature cabinet, toast after installing, bend and prune/bend, plating on the machine cutting gold afterwards; Testing electrical property, check obtains single TVS diode; Fig. 5 is the TVS diode sketch map after the embodiment of the invention pruning/bending, and shell 40 is packaged resin.Adopt the method for packing of two-part structure like this, make when follow-up pruning/bending first pin, reduce the stress that the TVS diode chip for backlight unit is received, improved the product reliability of TVS diode, and prolonged the TVS diode service life.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. the encapsulating structure of a TVS diode is characterized in that, comprising:
Lead frame comprises the lead frame body and first pin;
The TVS diode chip for backlight unit, the two poles of the earth of this TVS diode chip for backlight unit are positioned at the front and back of TVS diode chip for backlight unit, and said TVS diode chip for backlight unit is positioned on the loading end of lead frame body, and the back side of TVS diode chip for backlight unit is electrically connected with the loading end of lead frame body;
Conducting strip, said conducting strip comprise the conducting strip body and second pin, and said conducting strip body is arranged at TVS diode chip for backlight unit front and is electrically connected with the TVS diode chip for backlight unit is positive, and second pin is electrically connected with said first pin;
TVS diode, lead frame body and conducting strip all are sealed in the resin.
2. the encapsulating structure of TVS diode according to claim 1 is characterized in that, the thickness of said conducting strip body is greater than the thickness of second pin.
3. the encapsulating structure of TVS diode according to claim 2 is characterized in that, the thickness of said conducting strip body is 4 to 5 millimeters.
4. the encapsulating structure of TVS diode according to claim 2 is characterized in that, the thickness of said second pin is 0.7 to 1 millimeter.
5. according to the encapsulating structure of each described TVS diode of claim 1 to 4, it is characterized in that, said second pin at least one.
6. according to the encapsulating structure of each described TVS diode of claim 1 to 4, it is characterized in that said conducting strip is a copper sheet.
7. according to the encapsulating structure of each described TVS diode of claim 1 to 4; It is characterized in that, the loading end of the back side of TVS diode chip for backlight unit and lead frame body, the TVS diode is positive positive with the TVS diode; Said second pin and first pin all are electrically connected through scolding tin.
8. the manufacture method of a TVS diode is characterized in that, may further comprise the steps:
Step 1: lead frame is provided, and this lead frame comprises the lead frame body and first pin;
Step 2: place on the lead frame body TVS diode chip for backlight unit and fixing the electrical connection;
Step 3: conducting strip is provided, and said conducting strip comprises the conducting strip body and second pin;
Step 4: with the conducting strip body-fixed and be connected electrically on the TVS diode chip for backlight unit, said second pin is electrically connected with said first pin;
Step 5: TVS diode chip for backlight unit, lead frame body and conducting strip all are sealed in the resin, and pruning/bending first pin.
9. the manufacture method of TVS diode according to claim 8 is characterized in that, the thickness of said conducting strip body is greater than the thickness of second pin.
10. the manufacture method of TVS diode according to claim 8 is characterized in that, the thickness of said conducting strip body is 4 to 5 millimeters.
11. the manufacture method of TVS diode according to claim 8, the thickness that it is characterized in that said second pin are 0.7 to 1 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110071802.8A CN102693952B (en) | 2011-03-24 | 2011-03-24 | A kind of encapsulating structure of TVS diode and manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110071802.8A CN102693952B (en) | 2011-03-24 | 2011-03-24 | A kind of encapsulating structure of TVS diode and manufacture method |
Publications (2)
| Publication Number | Publication Date |
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| CN102693952A true CN102693952A (en) | 2012-09-26 |
| CN102693952B CN102693952B (en) | 2015-12-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110071802.8A Active CN102693952B (en) | 2011-03-24 | 2011-03-24 | A kind of encapsulating structure of TVS diode and manufacture method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103617985A (en) * | 2013-11-08 | 2014-03-05 | 张轩 | Plastic package lead frame with bent heads |
| CN108470684A (en) * | 2018-05-29 | 2018-08-31 | 陈欣洁 | A kind of semiconductor diode manufacturing process |
Citations (4)
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| US20050006731A1 (en) * | 2003-07-10 | 2005-01-13 | General Semiconductor, Inc. | Surface mount multichip devices |
| CN101356633A (en) * | 2005-11-01 | 2009-01-28 | Nxp股份有限公司 | Methods of packaging a semiconductor die and package formed by the methods |
| CN101673722A (en) * | 2008-09-10 | 2010-03-17 | 日月光半导体制造股份有限公司 | Lead frame |
| CN201601487U (en) * | 2009-10-23 | 2010-10-06 | 张书郎 | Chip type blocky surge protector |
-
2011
- 2011-03-24 CN CN201110071802.8A patent/CN102693952B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050006731A1 (en) * | 2003-07-10 | 2005-01-13 | General Semiconductor, Inc. | Surface mount multichip devices |
| CN101356633A (en) * | 2005-11-01 | 2009-01-28 | Nxp股份有限公司 | Methods of packaging a semiconductor die and package formed by the methods |
| CN101673722A (en) * | 2008-09-10 | 2010-03-17 | 日月光半导体制造股份有限公司 | Lead frame |
| CN201601487U (en) * | 2009-10-23 | 2010-10-06 | 张书郎 | Chip type blocky surge protector |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103617985A (en) * | 2013-11-08 | 2014-03-05 | 张轩 | Plastic package lead frame with bent heads |
| CN108470684A (en) * | 2018-05-29 | 2018-08-31 | 陈欣洁 | A kind of semiconductor diode manufacturing process |
| CN108470684B (en) * | 2018-05-29 | 2021-03-19 | 上海朋熙半导体有限公司 | Semiconductor diode production and manufacturing process |
Also Published As
| Publication number | Publication date |
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| CN102693952B (en) | 2015-12-09 |
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Effective date of registration: 20191227 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: Shenzhen BYD Microelectronics Co., Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: Biyadi Co., Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |