CN102683601A - White-light luminescent part and preparation method thereof and white-light electroluminescent device - Google Patents
White-light luminescent part and preparation method thereof and white-light electroluminescent device Download PDFInfo
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- CN102683601A CN102683601A CN2011100558353A CN201110055835A CN102683601A CN 102683601 A CN102683601 A CN 102683601A CN 2011100558353 A CN2011100558353 A CN 2011100558353A CN 201110055835 A CN201110055835 A CN 201110055835A CN 102683601 A CN102683601 A CN 102683601A
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Abstract
The invention is applicable to the technical field of electroluminescence, and provides a white-light luminescent part and a preparation method thereof and a white-light electroluminescent device. The white-light luminescent part comprises a first blue-light luminescent layer, a second blue-light luminescent layer and a red-light and green-light mixed luminescent layer between the first blue-light luminescent layer and the second blue-light luminescent layer, wherein the three luminescent layers are stacked, and the first blue-light luminescent layer and the second blue-light luminescent layer are made of mixture of blue-light phosphorescent materials and hole transmission materials with the energy gap higher than 3.5ev. By means of the hole transmission materials with the ultra-wide energy gaps, energy loss during energy transmission is avoided, and luminescence efficiency is greatly improved; the first blue-light luminescent layer and the second blue-light luminescent layer form a quantum trap structure, and luminescence of the red-light and green-light mixed luminescent layer can be stabilized; and the preparation method is simple in operation, low in cost, high in production effectiveness and extremely suitable for industrial production.
Description
Technical field
The invention belongs to the electroluminescent technology field, relate in particular to a kind of white-light emitting parts, its preparation method and white-light electroluminescence device.
Background technology
White-light electroluminescence device has blue light emitting, red light-emitting and green luminescence to combine, and the blue light phosphor material is a luminescent material commonly used in the white-light electroluminescence device ray structure.The blue light phosphor material is because the energy gap broad, and its main luminescence mechanism is that exciton at first forms in material of main part, transfers to through energy then and carries out luminously in the guest materials, and in the energy transfer process, the loss of energy is bigger; Generally speaking, along with the rising of device voltage, there are luminous unsettled phenomenon in red light-emitting and green luminescence, have influenced the whole luminous of white-light electroluminescence device.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of luminous efficiency height, luminous stable white-light emitting parts.
The present invention is achieved in that
A kind of white-light emitting parts; Comprise ruddiness and green glow hybrid illuminating layer between the first mutually range upon range of blue light-emitting, second blue light-emitting and this first blue light-emitting, second blue light-emitting; The material of this first blue light-emitting, second blue light-emitting is the mixture of blue light phosphor material and the hole mobile material of energy gap more than 3.5ev, and the material of this ruddiness and green glow hybrid illuminating layer is the mixture of ruddiness phosphor material, green glow phosphor material, hole mobile material and electron transport material.
And a kind of white-light electroluminescence device preparation method comprises the steps:
Blue light phosphor material and the hole mobile material of energy gap more than 3.5ev are mixed, obtain first mixture,, form first blue light-emitting this first mixture evaporation, spin coating or sputter;
Ruddiness phosphor material, green glow phosphor material, hole mobile material, electron transport material are mixed, obtain second mixture,, form ruddiness and green glow hybrid illuminating layer this second mixture vapor deposition, spin coating or sputter on this first blue light-emitting;
Blue light phosphor material and the hole mobile material of energy gap more than 3.5ev are mixed, obtain the 3rd mixture,, form second blue light-emitting, obtain the white-light emitting parts the 3rd mixture vapor deposition, spin coating or sputter on this ruddiness and green glow hybrid illuminating layer.
The embodiment of the invention further provides a kind of white-light electroluminescence device, comprises anode, negative electrode, and the above-mentioned white-light emitting parts between this anode, negative electrode.
Embodiment of the invention white-light emitting parts; Through using the hole mobile material of ultra wide energy gap; Make the blue light phosphor material can directly catch hole and electronics formation excitonic luminescence, avoided the loss of energy in the energy transfer process, improved luminous efficiency widely; Simultaneously, the structure of the hole mobile material through using ultra wide energy gap and first blue light-emitting, second blue light-emitting has formed the quantum structure of trap, has stablized the luminous of ruddiness and green glow hybrid illuminating layer; Through in ruddiness and green glow hybrid illuminating layer, using hole mobile material and electron transport material simultaneously; Make the transfer rate in electronics and hole increase greatly; Promote hole and electronics compound probability in the red-green glow phosphor material significantly, realized the remarkable lifting of luminous efficiency; Embodiment of the invention preparation method, simple to operate, with low cost, productivity effect is high, is very suitable for suitability for industrialized production.
Description of drawings
Fig. 1 is an embodiment of the invention white-light electroluminescence device structure chart;
Fig. 2 is the white-light electroluminescence device current efficiency comparison diagram of embodiment of the invention preparation and Comparative Examples preparation;
Fig. 3 is each layer of white-light electroluminescence device energy diagram of the embodiment of the invention one preparation.
Embodiment
In order to make the object of the invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
The embodiment of the invention provides a kind of white-light emitting parts; Comprise ruddiness and green glow hybrid illuminating layer between the first mutually range upon range of blue light-emitting, second blue light-emitting and this first blue light-emitting, second blue light-emitting; The material of this first blue light-emitting, second blue light-emitting is the mixture of blue light phosphor material and the hole mobile material of energy gap more than 3.5ev, and the material of this ruddiness and green glow hybrid illuminating layer is the mixture of ruddiness phosphor material, green glow phosphor material, hole mobile material and electron transport material.
Particularly, the material of first blue light-emitting, second blue light-emitting is the mixture that blue light phosphor material and the hole mobile material of energy gap more than 3.5ev are formed, and wherein, the weight percentage of blue light phosphor material is 1-20%; The thickness of this first blue light-emitting, second blue light-emitting is the 5-15 nanometer;
Particularly, this blue light phosphor material is selected from: two (4,6-difluorophenyl pyridine)-four (1-pyrazolyl) boric acid close iridium (FIr6), two (4,6-difluorophenyl pyridine-N, C
2) the pyridine formyl closes iridium (FIrpic), two (5-cyanic acid-4-fluorophenyl pyridine--N, C
2) pyridine carboxylic acid close iridium (FCNIrpic), two (4,6-difluorophenyl pyridine-N, C
25-)-[(2-pyridine) four nitrogen] close iridium (FIrN4) or three (3,5-two fluoro-4-benzene nitriles) pyridine and close iridium (FCNIr).
Further, the hole mobile material of this energy gap more than 3.5ev, promptly the hole mobile material of ultra wide energy gap not only has cavity transmission ability, and the difference of its lumo energy and HOMO energy level is more than 3.5ev, and other are restriction not.The hole mobile material of this ultra wide energy gap for example, to diphenyl di-o-tolyl silane (UGH1), 1, two (tri-phenyl-silane) benzene (UGH2), 1 of 4-, two (tri-phenyl-silane) benzene (UGH3) of 3-or 9,9 '-two silicon connect anthracene (UGH4).This first blue light-emitting, second blue light-emitting are through using the hole mobile material of ultra wide energy gap; Since the energy gap of hole mobile material than the ability gap length of blue light phosphor material many; Make the blue light phosphor material can directly catch hole and electronics and form excitonic luminescence, avoided, again energy is shifted to the blue light phosphor material and luminous through hole mobile material trapped electrons and hole formation exciton; And then avoided the loss of energy in the energy transfer process, improved luminous efficiency greatly;
Particularly; The material of this ruddiness and green glow hybrid illuminating layer is the mixture of being made up of ruddiness phosphor material, green glow phosphor material, hole mobile material and electron transport material; Wherein, The quality percentage composition of this ruddiness phosphor material is 0.5-5%, and the quality percentage composition of this green glow phosphor material is 5-10%, and remaining is hole mobile material and electron transport material; The mass ratio of this hole mobile material and electron transport material is 1: 2-5, and the thickness of this ruddiness and green glow hybrid illuminating layer is the 5-15 nanometer;
Particularly, this ruddiness phosphor material is selected from two (2-methyl-diphenyl quinoxaline) (acetylacetone,2,4-pentanediones) and closes iridium (Ir (MDQ)
2(acac)), two (1-phenyl isoquinolin quinoline) (acetylacetone,2,4-pentanediones) close iridium (Ir (piq)
2(acac)) or three (1-phenyl-isoquinolin) close iridium (Ir (piq)
3);
It is that three (2-phenylpyridines) close iridium (Ir (ppy) that this green glow phosphor material is selected from green light material
3) or acetopyruvic acid two (2-phenylpyridine) iridium (Ir (ppy)
2(acac));
This hole mobile material is selected from N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4; 4 '-benzidine (TPD), 4,4 ', 4 " three (carbazole-9-yl) triphenylamine (TCTA), N; N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB) or 1; 3,5-triphenylbenzene (TDAPB);
This electron transport material is selected from 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), 2; 5-two (1-naphthyl)-1,3,4-diazole (BND), 1; 2,4-triazole derivative (like TAZ), N-aryl benzimidazole (TPBI) or quinoxaline derivant (TPQ);
This ruddiness and green glow hybrid illuminating layer; Through using hole mobile material and electron transport material as doped body; Make the transfer rate in electronics and hole increase greatly; Promote hole and electronics compound probability in the red-green glow phosphor material significantly, realized the remarkable lifting of luminous efficiency; Further; Because first blue light-emitting, second blue light-emitting have used the hole mobile material of ultra wide energy gap, make this first blue light-emitting, second blue light-emitting form a quantum structure of trap, on the one hand; Hole and electronics are limited in (being ruddiness and green glow hybrid illuminating layer) in this quantum structure of trap; Ruddiness phosphor material and green glow phosphor material are caught it fully, form exciton and luminous, realized restriction the excitonic luminescence zone; With spectrum narrowing, realized luminous photochromic stablizing; On the other hand, other preparation quantum trap has been avoided in the existence of this quantum structure of trap, has simplified preparation flow, has reduced the number of plies in the white-light emitting parts, has reduced hole, the electronics obstruction that receives in transmission, has improved luminous efficiency greatly.
Embodiment of the invention white-light emitting parts through using the hole mobile material of ultra wide energy gap, and form the quantum structure of trap, make luminous efficiency improve greatly on the one hand, have realized stabilized illumination on the other hand.
The embodiment of the invention is further carried a kind of white-light electroluminescence device, and the ray structure of this white-light electroluminescence device is the white-light emitting parts of the invention described above embodiment.This white-light electroluminescence device comprises the above-mentioned white-light emitting parts between mutually range upon range of anode, negative electrode and this anode, the negative electrode; See also Fig. 1; Fig. 1 shows the structure of using embodiment of the invention white-light electroluminescence device; This white-light electroluminescence device comprises the white-light emitting parts 2 between anode 1, negative electrode 3 and this anode 1 and the negative electrode 3; These white-light emitting parts comprise first blue light-emitting 21, second blue light-emitting 22, and this first blue light-emitting 21 is mutually range upon range of with second blue light-emitting 22, between this first blue light-emitting 21, second blue light-emitting 22, also comprises ruddiness and green glow hybrid illuminating layer 23.
Further, this white-light electroluminescence device also comprises other functional layers, for example, and one or more in hole injection layer, hole transmission layer, electronic barrier layer, hole blocking layer, electron transfer layer and the electron injecting layer.In conjunction with above-mentioned Fig. 1, the structure of this hole injection layer, hole transmission layer, electronic barrier layer, hole blocking layer, electron transfer layer and electron injecting layer is following
A, this hole transmission layer, hole injection layer and electronic barrier layer are between anode 1 and white-light emitting parts 2, and order is anode/hole injection layer/hole transmission layer/electronic barrier layer/white-light emitting parts; If do not have in hole injection layer, hole transmission layer or the electronic barrier layer any one or more than, promptly on the basis of said sequence, delete, for example do not have hole injection layer, so, the order be: anode/hole transmission layer/electronic barrier layer/white-light emitting parts;
B, this electron injecting layer, electron transfer layer and hole blocking layer are between negative electrode 3 and white-light emitting parts 2; Order is white-light emitting parts/hole blocking layer/electron transfer layer/electron injecting layer/negative electrode; If do not have above-mentioned electron injecting layer, electron transfer layer and hole blocking layer; Then on the basis of aforementioned order, delete, identical among delet method and the aforementioned A, do not repeat to set forth at this.
Above-mentioned A, B holes implanted layer, hole transmission layer, electronic barrier layer, hole blocking layer, electron transfer layer, electron injecting layer and anode, negative electrode use sputter, spin coating or evaporation coating method preparation through using following material, concrete not restriction;
Anode adopts indium tin oxide (ITO), fluorine doped tin oxide (FTO), mix the zinc oxide (AZO) of aluminium or mix the zinc oxide (IZO) of indium, is preferably ITO.
Hole injection layer adopts molybdenum trioxide (MoO
3), tungstic acid (WO
3), VO
x(mixture of vanadium dioxide and vanadic oxide) or vanadic oxide (V
2O
5), thickness is 5-40nm, is preferably MoO
3, thickness is 5nm.
That hole transmission layer and electronic barrier layer adopt is N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4; 4 '-benzidine (TPD), 4,4 ', 4 " three (carbazole-9-yl) triphenylamine (TCTA), N; N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), 1; 3,5-triphenylbenzene (TDAPB) or CuPc CuPc.Thickness is 20-80nm, and hole transmission layer is preferably NPB, and thickness is 40nm, and electronic barrier layer is preferably TCTA, and thickness is 5nm.
Electron transfer layer and hole blocking layer adopt 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), oxine aluminium (Alq
3), 2,5-two (1-naphthyl)-1,3,4-diazole (BND), 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (like TAZ), N-aryl benzimidazole (TPBI) or quinoxaline derivant (TPQ).The hole barrier layer thickness is 3-10nm, is preferably TPBi, and thickness is 5nm, and the electric transmission layer thickness is 40-80nm, is preferably Bphen, and thickness is 60nm.
Electron injecting layer is Cs
2CO
3, CsN
3, LiF, CsF, CaF
2, MgF
2Perhaps NaF.Thickness is 0.5-5nm, also can adopt the doping of above material and electron transport material, and doping ratio is 20-60%, and thickness is 20-60nm.Preferred Bphen: CsN
3, preferred proportion is 20%, thickness is 40nm
Metallic cathode adopts silver (Ag), aluminium (Al), magnesium: silver (Mg:Ag) alloy or gold (Au).Thickness is 20-200nm, is preferably Al, and thickness is 150nm.
Embodiment of the invention white-light electroluminescence device through using above-mentioned white-light emitting parts, has been realized the remarkable lifting of luminous efficiency.See also Fig. 2; Fig. 2 shows the white-light electroluminescence device luminous intensity (current density) of embodiment of the invention white-light electroluminescence device and Comparative Examples and the comparison diagram of voltage relationship; Can know that from Fig. 2 when 10V, the white-light electroluminescence device current density of embodiment is 293mA/cm
2, and Comparative Examples white-light electroluminescence device current density is 192mA/cm
2, and along with the increase of voltage, this gap is increasing gradually, this explanation, and electronics and hole obtain restriction among the embodiment, the recombination probability raising of exciton, the current density of white-light electroluminescence device has obtained increase, and luminous intensity is improved.
The embodiment of the invention further provides above-mentioned white-light emitting parts preparation method, comprises the steps:
Blue light phosphor material and the hole mobile material of energy gap more than 3.5ev are mixed, obtain first mixture,, form first blue light-emitting this first mixture evaporation, spin coating or sputter;
Ruddiness phosphor material, blue light phosphor material, hole transmission layer, electron transfer layer are mixed, obtain second mixture,, form ruddiness and green glow hybrid illuminating layer this second mixture vapor deposition, spin coating or sputter on this first blue light-emitting;
Blue light phosphor material and the hole mobile material of energy gap more than 3.5ev are mixed, obtain the 3rd mixture,, form second blue light-emitting, obtain the white-light emitting parts the 3rd mixture vapor deposition, spin coating or sputter on this ruddiness and green glow hybrid illuminating layer.
Particularly, in this first mixture, the 3rd mixture, the weight percentage of blue light phosphor material is 1-20%; The thickness of this first blue light-emitting, second blue light-emitting is the 5-15 nanometer; In this second mixture; The quality percentage composition of this ruddiness phosphor material is 0.5-5%; The quality percentage composition of this green glow phosphor material is 5-10%; Remaining is hole mobile material and electron transport material, and the mass ratio of this hole mobile material and electron transport material is 1: 2-5, the thickness of this ruddiness and green glow hybrid illuminating layer is the 5-15 nanometer.
Further, among the embodiment of the invention preparation method, before preparation white-light emitting parts, also be included in the step for preparing hole injection layer, hole transmission layer or electronic barrier layer on the anode; After preparation white-light emitting parts, also be included in the step for preparing hole blocking layer, electron transfer layer, electron injecting layer and negative electrode on the white-light emitting parts, concrete grammar does not repeat to set forth at this with aforementioned identical.
Embodiment of the invention preparation method, simple to operate, simple flow, with low cost, productivity effect is high, is suitable for suitability for industrialized production.
Below in conjunction with specific embodiment above-mentioned white-light electroluminescence device preparation method is described.
Embodiment one
Vapor deposition, formation molybdenum trioxide hole injection layer on ito glass;
Hole transmission layer at this hole injection layer vapor deposition, formation NPB;
Vapor deposition, formation TPD electronic barrier layer on this hole transmission layer;
Prepare the first blue light emitting structure:
Fir6 mixed obtaining first mixture with UGH2, wherein, the quality percentage composition 5% of Fir6, with this first mixture on this electronic barrier layer vapor deposition, form the first blue light light luminescent layer, this first blue light emitting layer thickness is 10nm;
Preparation ruddiness and green glow hybrid illuminating layer:
With Ir (MDQ)
2(acac), Ir (ppy)
3, TCTA and TPBi mix, wherein, the weight percentage of Firpic is 1%, Ir (ppy)
3Weight percentage 5%, the mass ratio of TCTA and TPBi is 1: 3, obtains second mixture;
Prepare the second blue light emitting structure:
Fir6 mixed obtaining the 3rd mixture with UGH2, wherein, the quality percentage composition 5% of Fir6, with the 3rd mixture on this ruddiness and green glow hybrid illuminating layer vapor deposition, form the second blue light light luminescent layer, this second blue light emitting layer thickness is 10nm;
Vapor deposition, formation BND hole blocking layer on this second blue light-emitting;
Electron transfer layer at this hole blocking layer vapor deposition, formation BND;
Vapor deposition, formation TDAPB electron injecting layer on this electron transfer layer;
Vapor deposition, formation aluminium negative electrode obtain white-light electroluminescence device on this electron injecting layer.
See also Fig. 3, Fig. 3 shows the energy diagram of each layer of white-light electroluminescence device of the embodiment of the invention one preparation, from Fig. 3, can know; The HOMO energy level of UGH2 is than the low about 1.7ev of HOMO energy level of TCTA; And hanging down about 0.9ev than the material of main part of green glow-ruddiness layer, this can directly catch the hole that transmits from TCTA without UGH2 with regard to having guaranteed Fir6, directly recombination luminescence; Simultaneously because UGH2 and ruddiness-green glow material of main part have formed the relation of hole trap; Therefore, make the hole of arrival can directly be limited in ruddiness-green glow layer, limited the zone that forms exciton.
Embodiment two
Present embodiment white-light electroluminescence device preparation method, according to embodiment one, wherein, and in first mixture, the 3rd mixture, in quality percentage composition 1%, the second mixture of Fir6, Ir (MDQ)
2(acac) quality percentage composition is 0.5%, Ir (ppy)
3The quality percentage composition be 7%.
Embodiment three
Present embodiment white-light electroluminescence device preparation method, according to embodiment one, wherein, in first mixture, the 3rd mixture, the quality percentage composition of Fir6 is in 20%, the second mixture, Ir (MDQ)
2(acac) quality percentage composition is 5%, Ir (ppy)
3The quality percentage composition be 10%.
Embodiment four
Present embodiment white-light electroluminescence device preparation method, according to embodiment one, wherein, in second mixture, the ruddiness phosphor material is Ir (piq)
3, the green glow phosphor material is Ir (ppy)
2(acac).
Embodiment five
Present embodiment white-light electroluminescence device preparation method, according to embodiment one, wherein, in first mixture, the 3rd mixture, the blue light phosphor material is FIrpic; In second mixture, the ruddiness phosphor material is Ir (piq)
3, the green glow phosphor material is Ir (ppy)
2(acac).
Embodiment six
Present embodiment white-light electroluminescence device preparation method, according to embodiment one, wherein, the blue light emitting layer thickness is 15nm, ruddiness and green glow mixed luminescence layer thickness are 5nm.
Embodiment seven
Present embodiment white-light electroluminescence device preparation method, according to embodiment one, wherein, in second mixture, the mass ratio of TCTA and TPBi is 1: 2.
Embodiment eight
Present embodiment white-light electroluminescence device preparation method, according to embodiment one, wherein, in second mixture, the mass ratio of TCTA and TPBi is 1: 5.
Embodiment nine
Present embodiment white-light electroluminescence device preparation method, according to embodiment one, wherein, in second mixture, the ruddiness phosphor material is Ir (piq)
2(acac), the green glow phosphor material is Ir (ppy)
2(acac).
Embodiment ten
Present embodiment white-light electroluminescence device preparation method is according to embodiment one, wherein; In first mixture, the 3rd mixture, the blue light phosphor material is Firpic, and the quality percentage composition is 15%; Ultra wide energy gap hole mobile material is UGH1, and the thickness of first blue light-emitting is 12 nanometers.
Embodiment 11
Present embodiment white-light electroluminescence device preparation method is according to embodiment one, wherein; In first mixture, the blue light phosphor material is Firpic, and the quality percentage composition is 20%; Ultra wide energy gap hole mobile material is UGH1, and the thickness of first blue light-emitting is 15 nanometers.
Present embodiment white-light electroluminescence device preparation method is according to embodiment one, wherein; In the 3rd mixture, the blue light phosphor material is Firpic, and the quality percentage composition is 20%; Ultra wide energy gap hole mobile material is UGH1, and the thickness of second blue light-emitting is 15 nanometers.
Embodiment 13
Present embodiment white-light electroluminescence device preparation method is according to embodiment one, wherein; In first mixture, the 3rd mixture, the blue light phosphor material is Firpic, and the quality percentage composition is 18%; Ultra wide energy gap hole mobile material is UGH3, and the thickness of first blue light-emitting is 18 nanometers.
Present embodiment white-light electroluminescence device preparation method, according to embodiment one, wherein, and in second mixture, Ir (MDQ)
2(acac) quality percentage composition is 2.5%, Ir (ppy)
3The quality percentage composition be 6%, the thickness of ruddiness and green glow hybrid illuminating layer is 7 nanometers.
Embodiment 15
Present embodiment white-light electroluminescence device preparation method, according to embodiment one, wherein, and in second mixture, Ir (MDQ)
2(acac) quality percentage composition is 0.5%, Ir (ppy)
3The quality percentage composition be 7%, the thickness of ruddiness and green glow hybrid illuminating layer is 10 nanometers, the mass ratio of TCTA and TPBi is 1: 4.
Comparative Examples
This Comparative Examples white-light electroluminescence device preparation method according to embodiment one, wherein has only first blue light-emitting in the luminescent layer, in first blue light-emitting, use TCTA as doped body, in ruddiness and the green glow hybrid illuminating layer, does not have TPBi.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. white-light emitting parts; Comprise ruddiness and green glow hybrid illuminating layer between the first mutually range upon range of blue light-emitting, second blue light-emitting and said first blue light-emitting, second blue light-emitting; The material of said first blue light-emitting, second blue light-emitting is the mixture of blue light phosphor material and the hole mobile material of energy gap more than 3.5ev, and the material of said ruddiness and green glow hybrid illuminating layer is the mixture of ruddiness phosphor material, green glow phosphor material, hole mobile material and electron transport material.
2. white-light emitting parts as claimed in claim 1; It is characterized in that; To account for the weight percentage of mixture be 1-20% to the blue light phosphor material in said first blue light-emitting and second blue light-emitting, and surplus is the hole mobile material of said energy gap more than 3.5ev.
3. white-light emitting parts as claimed in claim 1; It is characterized in that the hole mobile material of said energy gap more than 3.5ev is selected from diphenyl di-o-tolyl silane, 1, two (tri-phenyl-silane) benzene, 1 of 4-; Two (tri-phenyl-silane) benzene or 9 of 3-, 9 '-two silicon connect anthracene.
4. white-light emitting parts as claimed in claim 1 is characterized in that, the thickness of said first blue light-emitting and second blue light-emitting is the 5-15 nanometer.
5. white-light emitting parts as claimed in claim 1; It is characterized in that; The quality percentage composition of ruddiness phosphor material is 0.5-5% in said ruddiness and the green glow hybrid illuminating layer; The quality percentage composition of said green glow phosphor material is 5-10%, and surplus is said hole mobile material and electron transport material.
6. white-light emitting parts as claimed in claim 1 is characterized in that, the hole mobile material in said ruddiness and the green glow hybrid illuminating layer and the mass ratio of electron transport material are 1: 2-5.
7. white-light emitting parts as claimed in claim 1 is characterized in that, the thickness of said ruddiness and green glow hybrid illuminating layer is the 5-15 nanometer.
8. a white-light emitting parts preparation method comprises the steps:
Blue light phosphor material and the hole mobile material of energy gap more than 3.5ev are mixed, obtain first mixture,, form first blue light-emitting said first mixture evaporation, spin coating or sputter;
Ruddiness phosphor material, green glow phosphor material, hole mobile material, electron transport material are mixed, obtain second mixture,, form ruddiness and green glow hybrid illuminating layer said second mixture vapor deposition, spin coating or sputter on said first blue light-emitting;
Blue light phosphor material and the hole mobile material of energy gap more than 3.5ev are mixed; Obtain the 3rd mixture; With said the 3rd mixture vapor deposition, spin coating or sputter on said ruddiness and green glow hybrid illuminating layer, form second blue light-emitting, obtain the white-light emitting parts.
9. white-light emitting parts preparation method as claimed in claim 8; It is characterized in that: to account for the weight percentage of mixture be 1-20% to the blue light phosphor material in said first blue light-emitting and second blue light-emitting; Surplus is the hole mobile material of said energy gap more than 3.5ev; The quality percentage composition of ruddiness phosphor material is 0.5-5% in said ruddiness and the green glow hybrid illuminating layer; The quality percentage composition of said green glow phosphor material is 5-10%, and surplus is said hole mobile material and electron transport material.
10. a white-light electroluminescence device comprises the luminous component between anode, negative electrode and this anode, the negative electrode, it is characterized in that, said luminous component is each described white-light emitting parts of claim 1-7.
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| CN109638172A (en) * | 2018-12-14 | 2019-04-16 | 惠科股份有限公司 | Organic luminescent device and preparation method thereof, display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1378409A (en) * | 2001-02-01 | 2002-11-06 | 株式会社半导体能源研究所 | Organic luminous element and display equipment using said element |
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| CN109638172A (en) * | 2018-12-14 | 2019-04-16 | 惠科股份有限公司 | Organic luminescent device and preparation method thereof, display device |
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| CN102683601B (en) | 2015-06-03 |
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