CN102683147A - Ion implantation device - Google Patents
Ion implantation device Download PDFInfo
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- CN102683147A CN102683147A CN2011103004142A CN201110300414A CN102683147A CN 102683147 A CN102683147 A CN 102683147A CN 2011103004142 A CN2011103004142 A CN 2011103004142A CN 201110300414 A CN201110300414 A CN 201110300414A CN 102683147 A CN102683147 A CN 102683147A
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Abstract
The present invention provides an ion implantation device which can prevent particles generated by an ion source from mixing in a substrate by using a low-cost and simple device structure. The ion implantation device (IM) of the present invention comprises: an ion source (1) used for leading out an ion beam (2) towards a direction intersected with a gravity direction (G) through an ion source outlet (14); a delivery plate (7) provided with a substrate (4); a mask (5) arranged on the delivery plate (7) and having at least one opening part (6); and a driving mechanism for moving the delivery plate (7) along a direction intersected with the ion beam (2), so as to enable the ion beam (2) to pass through the opening part (6) formed on the mask (5) and irradiate a specified area of the substrate. The ion implantation device also comprises a dustproof plate (11), when the ion source outlet (14) is observed along the gravity direction (G), the dustproof plate (11) covers a lower side of the ion source outlet (14) without interfering the ion beam (2) to irradiate the substrate (4).
Description
Technical field
The present invention relates to carry out the ion implantation apparatus that ion injects to the regulation zone of substrate through mask.
Background technology
Adopt ion implantation apparatus in the manufacturing process of solar cell.Recently, in this ion implantation apparatus, replace expensive photoresists, utilize the mask of the cheapness of carbon and silicon formation to prevail to the technological development that substrate (for example silicon wafer) carries out the ion injection.
As an example, Fig. 2 of patent documentation 1 (U.S. Patent bulletin US7816239B2 number) discloses a kind of ion implantation apparatus of quality analysis type.
Although the ion implantation apparatus of patent documentation 1 disclosed quality analysis type can improve the accuracy of manufacture of device, need possess the analyzing magnet and analysis hole that can realize mass analysis function, correspondingly improved the device price.
And, need not keep the such accuracy of manufacture of semiconductor device in the past for the manufacturing of solar cell.Therefore, can consider to use the fountain ion implantation apparatus that does not possess mass analysis function that utilizes in the manufacturing of flat-panel monitor, replace the ion implantation apparatus of putting down in writing among Fig. 2 of patent documentation 1 that possesses mass analysis function.
But; The ion implantation apparatus of existing fountain along gravity direction from ion source under shine ion beam; The substrate that is configured in the ion source below is carried out ion inject, so for example have the metal particle of ionogenic filament generation or the problem that the interior deposit of piling up of ionogenic plasma chamber is sneaked into substrate.
For preventing that said particulate etc. from sneaking into substrate, can consider to utilize static or electric field, after being deflected, the ion beam of drawing from ion source shines on the substrate, if but adopt this arrangement for deflecting, then not only apparatus structure is complicated, and the device price also can improve.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of ion implantation apparatus,, can prevent that the particulate of ion source generation from sneaking into substrate through cheap and simple apparatus structure.
Ion implantation apparatus of the present invention comprises: ion source, draw ion beam through the ion beam outlet towards the direction of reporting to the leadship after accomplishing a task with gravity direction; Transfer dish is mounted with substrate; Mask is installed on the said transfer dish, and has a peristome at least; And driving mechanism, move on the direction of reporting to the leadship after accomplishing a task with said ion beam through making said transfer dish, make the peristome of said ion beam through forming on the said mask; Regulation zone to said substrate is shone; Said ion implantation apparatus is characterised in that, also comprises dust excluding plate, when observing said ion beam outlet along gravity direction; Said dust excluding plate covers the below of said ion beam outlet, and does not hinder the said substrate of said ion beam irradiation.
As stated; Since ion beam with respect to the gravity direction oblique illumination on substrate; And possesses dust excluding plate; This dust excluding plate covers the below of ionogenic ion beam outlet and does not hinder the ion beam irradiation substrate, so through cheap and simple apparatus structure, can prevent that the particulate of ion source generation from sneaking into substrate.
In addition, preferably, the said peristome that forms on the said mask and the said ion beam of drawing from said ion source to draw direction parallel.
As stated, if be pre-formed the peristome of mask, then can prevent sputter to take place at peristome internal cause ion beam.Thus, can prevent to follow the particulate of sputter generation to sneak into substrate.
For the particulate that suppresses to pile up on the dust excluding plate disperses from dust excluding plate, preferably, said dust excluding plate is provided with erection part, and said erection part is outstanding to the top from the surface of said dust excluding plate.
Utilize said structure, even particulate disperses from dust excluding plate, this particulate also can bump against erection part, and is deposited on the dust excluding plate once more.
In addition, suppress the effect that particulate disperses from dust excluding plate for improving, preferably, the whole week along the gravity direction opposite face relative with said ion source that said erection part is arranged on said dust excluding plate makes progress.
On the other hand, sneak into substrate for effectively suppressing particulate, preferably, when gravity direction is observed, said erection part is arranged on the relative end that disposes with said substrate of the said transfer dish throughput direction in edge of said dust excluding plate.
If adopt said structure, then can efficiently suppress particulate and disperse from dust excluding plate.
Since ion beam with respect to the gravity direction oblique illumination on substrate; And possesses dust excluding plate; This dust excluding plate covers the below of ionogenic ion beam outlet and does not hinder the ion beam irradiation substrate; So, can prevent that the particulate of ion source generation from sneaking into substrate through cheap and simple apparatus structure.
Description of drawings
Fig. 1 is the whole plane graph of ion implantation apparatus of expression one embodiment of the present invention.
Fig. 2 is the plane graph of expression from the device shown in Figure 1 of gravity direction observation.
Fig. 3 is illustrated in the plane graph that loads the example of many pieces of substrates on the transfer dish, and (A) expression is along the example of many pieces of substrates of Z direction loading, and (B) expression is along the example of many pieces of substrates of directions X loading, and (C) expression is with the example of rectangular mounting substrate.
Fig. 4 is other examples of the dust excluding plate of Fig. 1, Fig. 2 record, (A) form of the dust excluding plate on the expression XZ plane, and (B) expression is along the sectional drawing of the A-A line of (A) record.
Fig. 5 is the different example of putting down in writing with Fig. 1, Fig. 2 of dust excluding plate, (A) form of the dust excluding plate on the expression XZ plane, (B) form of the dust excluding plate on the expression XY plane.
Fig. 6 is the plane graph of other examples of the dust excluding plate of presentation graphs 1, Fig. 2 record.
Fig. 7 is the plane graph of the expression another example different with the dust excluding plate of Fig. 1, Fig. 2 record.
Fig. 8 is the plane graph of expression from the device shown in Figure 7 of directions X observation.
Fig. 9 is the plane graph of other examples of the dust excluding plate of presentation graphs 1, Fig. 2 record.
Figure 10 is the plane graph of expression from the device shown in Figure 9 of gravity direction observation.
Figure 11 is the plane graph of variation of the dust excluding plate of presentation graphs 9, Figure 10 record.
Figure 12 is the plane graph of expression from the device shown in Figure 11 of gravity direction observation.
Figure 13 is the plane graph of variation of the ion implantation apparatus of presentation graphs 1, Fig. 2 record.
Figure 14 is from the plane graph of wanting portion's form of the device shown in Figure 13 of gravity direction observation, (A) representes ionogenic driving mechanism, (B) driving mechanism of expression dust excluding plate.
Figure 15 is the plane graph of another variation of the ion implantation apparatus of presentation graphs 1, Fig. 2 record.
Figure 16 is the plane graph of the ion source external morphology that ion implantation apparatus possessed of presentation graphs 1, Fig. 2 record.
Figure 17 is the stereogram of the ion source outward appearance of expression Figure 16 record.
Description of reference numerals
1 ... Ion source
2 ... Ion beam
3 ... Vacuum tank
4 ... Substrate
5 ... Mask
6 ... Peristome
7 ... Transfer dish
8 ... Roller
9 ... Axle
10 ... Motor
11 ... Dust excluding plate
12 ... Erection part
14 ... The ion beam outlet
IM ... Ion implantation apparatus
G ... Gravity direction
Embodiment
In the embodiments of the invention, the direction of the X axle of each figure record is the throughput direction of substrate, and the direction of Y axle is the direction opposite with gravity direction.And the direction of Z axle is the direction that intersects vertically with X axle and two axles of Y axle.
Represented ion implantation apparatus IM of the present invention among Fig. 1, represented among Fig. 2 from the form of the device shown in Figure 1 of gravity direction G observation.Based on the record of Fig. 1, Fig. 2, below the apparatus structure of ion implantation apparatus IM that the present invention is used describe.In addition, be simplicity of illustration, omitted the record of ion source 1 among Fig. 2.
Shown in Fig. 2 dotted line, in this example, ion beam 2 is a long and ion beam short band shape on directions X on the Z direction to ion beam 2 at the fracture morphology in the XZ plane.In addition, the shape of ion beam outlet 14 is also roughly the same with the shape of said ion beam 2.In Fig. 2, when observing ion beam outlet 14 from gravity direction G, its profile after projection form on the dust excluding plate 11 stated be expressed as perspective plane 17.
In vacuum tank 3, dispose the transfer dish 7 that has loaded substrate 4 (for example circular silicon wafer), on the said transfer dish 7 mask 5 is installed, the position that is positioned at substrate 4 tops of said mask 5 (Y direction one side) has three peristomes 6.Transfer dish 7 is come and gone conveying towards direction shown in the arrow A on a plurality of rollers 8, said a plurality of rollers 8 are supported by the wall of vacuum tank 3.In addition, the side that is positioned at Z direction one side of mask 5 is opened wide, and through this part, by not shown transfer robot transfer dish 7 is moved into or taken out of to substrate 4.
For the device of moving into substrate 4 from the inboard, lateral of vacuum tank 3, adopt device with existing ion implantation apparatus same structure.Particularly; The pre-configured chamber of taking in many pieces of substrates 4 in the outside of vacuum tank 3 (atmosphere one side); Through being configured in the transfer robot in vacuum tank 3 outsides, from said chamber substrate 4 is transported in the not shown prechamber, this prechamber is connected with vacuum tank 3.Then, make after prechamber is vacuum atmosphere, through be configured in the prechamber or vacuum tank 3 in transfer robot, be transported to substrate 4 on the transfer dish 7.Substrate 4 is carried out substrate 4 being transported in the prechamber once more from transfer dish 7 by transfer robot after ion inject to handle.Then, after prechamber turns back to air atmosphere, through being arranged on the transfer robot in vacuum tank 3 outsides, from prechamber with substrate reception in chamber.In addition, the present invention is not limited to said structure, also can chamber that take in many pieces of substrates 4 be transported in the vacuum tank 3 through prechamber in advance, re-uses transfer robot and in vacuum tank 3, from chamber transfer dish 7 is moved into or taken out of to substrate 4.
Each roller 8 is made up of the member of two circular concentric, more specifically, by the member at the path of the lower surface of Y direction upper support transfer dish 7, and constitutes at the member in the big footpath of the side of Z direction upper support transfer dish 7.
Be configured in each roller 8 of Z direction one side (right side among Fig. 2) across transfer dish 7, be bearing on the axle 9 that is connected with the wall of vacuum tank 3 with the mode that can rotate.And each roller 8 that is configured in an opposite side of transfer dish 79 is connected with axle, and said 9 is connected with the motor 10 that is arranged on vacuum tank 3 outsides by vacuum seal 13.Like this, utilize said motor 10 to rotate the roller 8 that is connected on the axle 9 is rotated, can carry transfer dish 7.In addition, in order to come and go conveying, preferred motor 10 can rotating.
Through on the direction of reporting to the leadship after accomplishing a task with ion beam 2, transfer dish 7 being carried, carry out ion and inject and handle being loaded in substrate 4 on the transfer dish 7.More detailed, on the Z direction that intersects vertically with directions X as transfer dish 7 throughput directions, the size of ion beam 2 is greater than substrate 4.Therefore, through with the mode of crossing ion beam 2 transfer dish 7 being carried, can carry out ion to substrate 4 and inject processing along directions X.
As shown in Figure 1, the shape of drawing the peristome 6 that direction (being the direction of advance of ion beam 2 figure) and mask 5 form of the ion beam 2 from the XY plane can know, the peristome 6 that forms on the mask 5 and the ion beam of drawing 2 from ion source 1 to draw direction parallel.If make peristome 6 be above-mentioned shape in advance, then can prevent to take place sputter at peristome 6 internal cause ion beams 2.Like this, can prevent to follow the particulate of sputter generation to sneak into substrate 4.
Below ion source 1, dispose dust excluding plate 11, said dust excluding plate 11 is used to prevent that metal particle of dispersing from ion source 1 etc. from sneaking into substrate 4.As shown in Figure 2, during at least along gravity direction G observation ion beam outlet 14, on said dust excluding plate 11, there is perspective plane 17.In other words, when gravity direction G observed, dust excluding plate 11 covered the below of ion beam outlets 14.In addition, said dust excluding plate 11 is configured on the position that does not hinder ion beam 2 irradiated substrates 4, or the structure of stating after adopting, not hinder ion beam 2.
Metal particle that disperses from ion beam outlet 14 etc. is because of action of gravity is mainly dispersed to the below of ion beam outlet 14.Therefore, through in advance dust excluding plate 11 being disposed or constituting the below that covers ion beam outlet 14 at least, can use dust excluding plate 11 to receive most particulate.
In addition, also following situation possibly take place, that is, because the gentle breeze that produces when transfer dish 7 carried makes the particulate that is deposited in dust excluding plate 11 upper surfaces disperse from dust excluding plate 11.For preventing that the aforesaid particulate that disperses from dust excluding plate 11 from sneaking into substrate 4, be formed with on the dust excluding plate 11 from its surface to above outstanding erection part 12.Utilize this erection part 12, the particulate that disperses from dust excluding plate 11 can bump against on the erection part 12, and is deposited in once more on the dust excluding plate 11.In addition, considering that suppressing particulate sneaks under the situation of substrate, preferably when gravity direction G observes, the edge that erection part 12 is formed on dust excluding plate 11 is as on the directions X of transfer dish 7 throughput directions and the substrate 4 relative ends that dispose.Even this is to consider that particulate disperses to the Z direction from dust excluding plate 11 also can not sneak into substrate 4 immediately, and when particulate when an opposite side with directions X is dispersed, its possibility of sneaking into substrate 4 greatly improves.
Like this; Since ion beam 2 with respect to gravity direction G oblique illumination on substrate 4; And possesses dust excluding plate 11; This dust excluding plate 11 cover ion sources 1 ion beam outlet 14 the below and do not hinder ion beam 2 irradiated substrates 4, so, can prevent that the particulate that ion source 1 produces from sneaking into substrate through cheap and simple apparatus structure.
More than the execution mode illustration of explanation on transfer dish 7, load the situation of one piece of substrate 4, as shown in Figure 3, also can on transfer dish 7, load many pieces of substrates 4.(A) of Fig. 3 represented to be set up in parallel in the Z direction state of two pieces of substrates 4.The long side direction of the ion beam 2 that is formed on each peristome 6 on the mask 5 and draws from ion source 1 is sized to, and on the direction (being the Z direction this moment) that the throughput direction with transfer dish 7 intersects vertically, covers the Zone Full of two pieces of substrates 4.And, utilize the driving mechanism that constitutes by aforesaid a plurality of roller 8, axle 9 and motor 10, through transfer dish 7 being carried, inject and handle substrate 4 is carried out ion with the mode of crossing ion beam 2.
On the other hand, shown in Fig. 3 (B), also can on transfer dish 7, be set up in parallel two pieces of substrates 4 along directions X.Identical with the example of Fig. 3 (A); The long side direction of the ion beam 2 that is formed on the peristome 6 on the mask 5 and draws from ion source 1 is sized to; On the direction (being the Z direction this moment) that the throughput direction with transfer dish 7 intersects vertically, the Zone Full of covered substrate 4.And, through the driving mechanism that constitutes by roller 8 grades, transfer dish 7 is carried with the mode of crossing ion beam 2, inject processing substrate 4 is carried out ion.In addition, piece number that is loaded in the substrate 4 on the transfer dish 7 here is two pieces, but is not limited thereto, also can be for more than three pieces.In addition, shown in Fig. 3 (C), also can be configured to substrate 4 rectangular.In addition, the shape of substrate 4 can also not be circular, and is rectangle.
In the aforesaid execution mode, observe, be formed with erection part 12 on the end relative of dust excluding plate 11, but the structure of dust excluding plate 11 is not limited thereto with substrate 4 from gravity direction G.In addition, also can consider to adopt the structure of Fig. 4～Figure 12 record.
(A) of Fig. 4 represented to be installed in the dust excluding plate 11 on the sidewall of vacuum tank 3 through not shown bolt, and (B) of Fig. 4 represented along the sectional drawing of the A-A line of (A) record of Fig. 4.On said dust excluding plate 11,, be formed with erection part 12 on other the end except with the end that vacuum tank 3 contacts.Utilize said structure, can improve and suppress the effect that particulate disperses from dust excluding plate 11.In addition, under the situation of dust excluding plate 11 and the sidewall spacers configuration of vacuum tank 3, can spread all over the whole erection part 12 that circumferentially is provided with of dust excluding plate 11 ends.
In addition, form the position of erection part 12, can be not yet in the end of dust excluding plate 11.For example also can be as shown in Figure 5, from the execution mode of Fig. 1, Fig. 2 explanation, form the end of the dust excluding plate 11 of erection part 12, along the wall one side formation erection part of directions X deflection vacuum tank 3.For this structure, also identical with the execution mode that utilizes Fig. 1, Fig. 2 explanation, can suppress particulate and disperse from dust excluding plate 11.
And, as shown in Figure 6, also can on the part of dust excluding plate 11 ends, form erection part 12.At this moment, on the Z direction, the size of erection part 12 covers the Zone Full of the substrate 4 that loads on the transfer dish 7, and on the Z direction, is shorter than the length of dust excluding plate 11.According to said structure, utilize undersized erection part 12, not only can suppress particulate and disperse from dust excluding plate 11, can also prevent that particulate from sneaking into substrate 4.
In the above execution mode, dust excluding plate 11 be bearing in vacuum tank 3 along on the sidewall of directions X, but be not limited thereto, dust excluding plate 11 also can be bearing on the lower surface of vacuum tank 3.
Fig. 7 has represented that dust excluding plate 11 is bearing in the situation on the lower surface of vacuum tank 3.In addition, Fig. 8 has represented from the form of the device shown in Figure 7 of directions X observation.In addition, be simplicity of illustration, omitted the record of ion source 1 among Fig. 8.
As shown in Figure 7, during by the lower surface of vacuum tank 3 supporting dust excluding plate 11, dispose roller 8 and axle 9 constituting between the leg that extends along the Y direction of dust excluding plate 11.And as shown in Figure 8, transfer dish 7 can pass through from being configured between the leg on the Z direction.
In addition, dust excluding plate 11 also can adopt Fig. 9, structure shown in Figure 10.Here, illustration on the XZ plane, spread all over whole configuration dust excluding plate 11 of vacuum tank 3, and on the part of said dust excluding plate 11, be formed for peristome 18 through ion beam 2.At this moment, for the ion beam flow that prevents the ion beam 2 of irradiation on the substrate 4 reduces, the shape of the peristome 18 that forms on the dust excluding plate 11 is set to, and does not block the ion beam 2 of drawing from ion source 1.In addition, also can replace whole above-mentioned configuration, but partly dispose dust excluding plate 11.For example, also can make dust excluding plate shown in Figure 10 11 have the gap on the Z direction and between the vacuum tank 3.
In addition, also can be like Figure 11, shown in Figure 12, on the dust excluding plate 11 of Fig. 9, Figure 10 formed peristome 18 around erection part 12 is set.Utilize this erection part 12, can prevent that particulate from dispersing in the zone through peristome 18 downwards.In addition, spread all over the whole circumferential formation erection part 12 of peristome 18 here, but be not limited to this structure.As long as on the part around the peristome 18, form erection part 12, the regional downwards effect of dispersing of the particulate that just can be inhibited.
In the above execution mode, ion source 1 is all fixed with dust excluding plate 11, also can use movable ion source 1 and dust excluding plate 11.Figure 13, Figure 14 have represented this example.
In Figure 13, illustrate the form of the ion implantation apparatus IM on the XY plane.And, the state the when state when (A) of Figure 14 represented from the ion source 1 of gravity direction G observation Figure 13, (B) of Figure 14 have been represented from the dust excluding plate 11 of gravity direction G observation Figure 13.Shown in Figure 14 (A), two sides that are positioned at the Z direction of ion source 1 are connected with axle 9.The axle 9 of one side (being the right side among the figure) is connected with the motor 10 that is arranged on vacuum tank 3 outsides by vacuum seal 13, and the axle 9 of opposite side (being the left side among the figure) can be supported on bearing 19 rotationally, and said bearing 19 is installed on the wall of vacuum tank 3.Under this structure,, ion source 1 is rotated towards the direction of arrow B through making motor 10 rotatings.Be represented by dotted lines posture change among Figure 13, and the direction of the ion beam 2 of drawing from ion source 1 changes based on the ion source that rotation produced 1 of motor 10.
In addition, shown in Figure 14 (B), the end on the directions X of dust excluding plate 11 is configured in the outside of vacuum tank 3 by vacuum seal 13.And shown in figure 13, on the Z of dust excluding plate 11 direction two sides, be formed with tooth bar 15, and the configuration of the adjacent sidewalls of the Z direction of pinion 16 and dust excluding plate 11, to mesh with this tooth bar 15, this pinion 16 is connected with the axle 9 of motor 10.In this structure, through making motor 10 rotatings, dust excluding plate 11 can move to the direction of arrow C.In addition, in this case, the motor 10 that is configured on two sides of dust excluding plate 11 is synchronized with each other.
According to this configuration; Be installed on the transfer dish 7 even will have with the mask 5 of variform peristome 6 in the past; And, also can likewise carry out ion with the execution mode of above explanation and inject and handle correspondingly to adjusting from the irradiating angle of the ion beam 2 of ion source 1 and the position of dust excluding plate 11.
The long limit of the throughput direction of transfer dish 7 and ribbon ion beam 2, the relation of minor face are not limited to the execution mode of above explanation.For example shown in Figure 15, also can consider the long side direction of ion beam 2 is set at the Z direction, its short side direction is set at directions X, and transfer dish 7 is carried with the mode of crossing ion beam 2 long limits.
In addition, more than in the execution mode of explanation, when the XY viewed in plan, the shape of erection part 12 is rectangular substantially, but the shape of erection part 12 also can be triangular in shape.And the quantity that is formed on the peristome 6 on the mask 5 is not limited to three.As long as the quantity of said peristome 6 is more than one.
Shown in ion source 1 comprise that rectangular plasma generates container 19, and generate container 19 from plasma and draw banded ion beam 2.
Generate on the container 19 at plasma, gas source 28 is installed, from gas (for example, the PH of said gas source 28 supplies as ion beam 2 raw materials by not shown valve
3, B
2H
4, or by the gas of hydrogen or HD).In addition, be connected with not shown gas flow adjuster (mass flow controller) on this gas source 28, generate the gas flow of container 19 internal feeds with adjustment from gas source 28 to plasma.
Generate at plasma on the side of container 19, the filament 21 of a plurality of U-shapeds is installed along the Z direction.Utilization is connected the power supply V between the terminal of filament 21
F, can adjust the magnitude of current that flows through each filament 21.According to this configuration, can adjust the electric current distribution of the ion beam 2 of drawing from ion source 1.
Through coming heat filament 21, make its ejected electron to filament 21 energisings.Said electron bombardment supplies to plasma and generates container 19 gas inside (PH
3And B
2H
4Deng) and cause ionisation of gas, thereby, plasma generates plasma 22 in generating container 19.
On said ion source 1, the outer wall that generates container 19 along plasma is equipped with a plurality of permanent magnets 20.The concrete structure of said permanent magnet 20 is shown in figure 17; Around plasma generation container 19; The ion beam 2 of drawing along ion beam outlet 14 draw direction (direction shown in the arrow D among the figure), permanent magnet 20 is configured to generate with plasma the alternating polarity of the relative permanent magnet 20 of container 19.Utilize said permanent magnet 20 to form the cusped magnetic field at the interior zone that plasma generates container 19, the electronics that filament 21 is emitted is closed in the regulation zone.In addition, be contained under the state on the not shown carriage, said carriage be installed in plasma generate on the container 19 at permanent magnet 20.
The extraction electrode system of ion source 1 has four pieces of electrodes, and the direction of drawing from plasma generation container 19 along ion beam 2 disposes accelerating electrode 24, extraction electrode 25 successively, suppresses electrode 26 and grounding electrode 27.The current potential that each electrode and plasma generate between the container 19 passes through a plurality of power supply (V
1～V
4) be set at different values respectively, and each electrode electrically is installed on the insulating flange dish 23 respectively independently.
Each electrode as the extraction electrode system uses for example is provided with a plurality of circular holes, and draws ion beam 2 through said hole.In addition, the extraction electrode system of above-mentioned ion source 1 has four pieces of electrodes, but is not limited thereto, and as long as piece number of electrode is more than one piece.In addition, the quantity of filament 21 is not limited to a plurality of, also can be one.
In the plasma generation container 19 of said ion source 1, be provided with the permanent magnet 29 that a pair of seizure light ion is used, and utilize said permanent magnet 29, on the zone that the ion beam 2 that plasma 22 is drawn passes through, form magnetic field 30.The flux density value in magnetic field 30 is set to, and makes the dopant that needs to inject substrate 4 through magnetic field 30, and the light ion (light ion of hydrogen and helium and so on) beyond the dopant that needs is captured in magnetic field 30.Through the permanent magnet 29 that this seizure light ion is used is set, can be to the dopant of substrate 4 efficient injections needs.In addition, electromagnet also can be set to replace catching the permanent magnet 29 that light ion is used.
Except above-mentioned explanation, can in the scope that does not break away from purport of the present invention, carry out various improvement and distortion to the present invention.
Claims (5)
1. ion implantation apparatus comprises:
Ion source is drawn ion beam through the ion beam outlet towards the direction of reporting to the leadship after accomplishing a task with gravity direction;
Transfer dish is mounted with substrate;
Mask is installed on the said transfer dish, and has a peristome at least; And
Driving mechanism moves on the direction of reporting to the leadship after accomplishing a task with said ion beam through making said transfer dish, makes the peristome of said ion beam through forming on the said mask, and the regulation zone of said substrate is shone, and said ion implantation apparatus is characterised in that,
Also comprise dust excluding plate, when observing said ion beam outlet along gravity direction, said dust excluding plate covers the below of said ion beam outlet, and does not hinder the said substrate of said ion beam irradiation.
2. ion implantation apparatus according to claim 1 is characterized in that, the said peristome that forms on the said mask and the said ion beam of drawing from said ion source to draw direction parallel.
3. ion implantation apparatus according to claim 1 and 2 is characterized in that said dust excluding plate is provided with erection part, and said erection part is outstanding to the top from the surface of said dust excluding plate.
4. ion implantation apparatus according to claim 3 is characterized in that, the whole week along the gravity direction opposite face relative with said ion source that said erection part is arranged on said dust excluding plate makes progress.
5. ion implantation apparatus according to claim 3 is characterized in that, when gravity direction is observed, the said transfer dish throughput direction in edge that said erection part is arranged on said dust excluding plate and said substrate are relatively on the end of configuration.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-061731 | 2011-03-18 | ||
| JP2011061731A JP2012199033A (en) | 2011-03-18 | 2011-03-18 | Ion implanter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102683147A true CN102683147A (en) | 2012-09-19 |
Family
ID=46814886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103004142A Pending CN102683147A (en) | 2011-03-18 | 2011-09-29 | Ion implantation device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2012199033A (en) |
| CN (1) | CN102683147A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103268850A (en) * | 2013-05-03 | 2013-08-28 | 中国电子科技集团公司第四十八研究所 | Solar battery piece ion implanter |
| CN110243978A (en) * | 2019-07-19 | 2019-09-17 | 林其昌 | A kind of chromatograph |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6094256B2 (en) * | 2013-02-22 | 2017-03-15 | 日新イオン機器株式会社 | Ion beam irradiation equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001135589A (en) * | 1999-11-05 | 2001-05-18 | Sony Corp | Ion implanting apparatus |
| CN200986914Y (en) * | 2006-12-13 | 2007-12-05 | 中芯国际集成电路制造(上海)有限公司 | Ion injection equipment |
-
2011
- 2011-03-18 JP JP2011061731A patent/JP2012199033A/en not_active Withdrawn
- 2011-09-29 CN CN2011103004142A patent/CN102683147A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001135589A (en) * | 1999-11-05 | 2001-05-18 | Sony Corp | Ion implanting apparatus |
| CN200986914Y (en) * | 2006-12-13 | 2007-12-05 | 中芯国际集成电路制造(上海)有限公司 | Ion injection equipment |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103268850A (en) * | 2013-05-03 | 2013-08-28 | 中国电子科技集团公司第四十八研究所 | Solar battery piece ion implanter |
| CN103268850B (en) * | 2013-05-03 | 2015-09-02 | 中国电子科技集团公司第四十八研究所 | A kind of solar battery sheet ion implantor |
| CN110243978A (en) * | 2019-07-19 | 2019-09-17 | 林其昌 | A kind of chromatograph |
| CN110243978B (en) * | 2019-07-19 | 2022-04-26 | 深圳华普通用科技有限公司 | Chromatograph |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012199033A (en) | 2012-10-18 |
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