CN102680009A - 线性薄膜磁阻传感器 - Google Patents
线性薄膜磁阻传感器 Download PDFInfo
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- CN102680009A CN102680009A CN2012102054168A CN201210205416A CN102680009A CN 102680009 A CN102680009 A CN 102680009A CN 2012102054168 A CN2012102054168 A CN 2012102054168A CN 201210205416 A CN201210205416 A CN 201210205416A CN 102680009 A CN102680009 A CN 102680009A
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- magnetoresistive sensor
- film magnetoresistive
- magnetic
- linear thin
- thin
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- 239000010409 thin film Substances 0.000 title claims abstract description 236
- 230000005389 magnetism Effects 0.000 claims abstract description 22
- 239000002131 composite material Substances 0.000 claims description 40
- 229910019236 CoFeB Inorganic materials 0.000 claims description 32
- 229910003321 CoFe Inorganic materials 0.000 claims description 28
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 238000007885 magnetic separation Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 3
- 230000004044 response Effects 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 3
- 239000012528 membrane Substances 0.000 abstract 3
- 230000005611 electricity Effects 0.000 abstract 2
- 238000005259 measurement Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000036039 immunity Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
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- Measuring Magnetic Variables (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210205416.8A CN102680009B (zh) | 2012-06-20 | 2012-06-20 | 线性薄膜磁阻传感器 |
Applications Claiming Priority (1)
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CN201210205416.8A CN102680009B (zh) | 2012-06-20 | 2012-06-20 | 线性薄膜磁阻传感器 |
Publications (2)
Publication Number | Publication Date |
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CN102680009A true CN102680009A (zh) | 2012-09-19 |
CN102680009B CN102680009B (zh) | 2015-08-05 |
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CN201210205416.8A Ceased CN102680009B (zh) | 2012-06-20 | 2012-06-20 | 线性薄膜磁阻传感器 |
Country Status (1)
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CN (1) | CN102680009B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015010620A1 (zh) * | 2013-07-24 | 2015-01-29 | 江苏多维科技有限公司 | 一种磁阻混频器 |
CN107923956A (zh) * | 2015-06-09 | 2018-04-17 | Inl-国际伊比利亚纳米技术实验室 | 磁阻传感器 |
CN109752578A (zh) * | 2019-03-15 | 2019-05-14 | 江苏多维科技有限公司 | 一种磁隔离器 |
CN113466759A (zh) * | 2021-06-30 | 2021-10-01 | 山东大学 | 单、双轴磁阻磁场传感器和制作方法 |
CN114764007A (zh) * | 2021-01-11 | 2022-07-19 | 大银微系统股份有限公司 | 位置感测机构 |
CN115453432A (zh) * | 2022-11-09 | 2022-12-09 | 南方电网数字电网研究院有限公司 | 石墨烯磁阻传感器及其制备方法、磁阻测量方法 |
CN116449261A (zh) * | 2023-06-05 | 2023-07-18 | 珠海多创科技有限公司 | 磁阻元件及其制备方法、磁传感装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0580473A1 (fr) * | 1992-07-15 | 1994-01-26 | ABB CONTROL Société Anonyme | Transformateur asservi d'intensité pour courants continus, alternatifs ou pulses |
CN1451159A (zh) * | 2000-11-09 | 2003-10-22 | 日立麦克赛尔株式会社 | 磁记录媒体和磁记录装置 |
CN1505005A (zh) * | 2002-12-04 | 2004-06-16 | ������������ʽ���� | 磁记录媒体及使用该磁记录媒体的磁存储装置 |
US20050083041A1 (en) * | 2003-10-16 | 2005-04-21 | Aaron Schwartzbart | Hybrid inductive sensor |
CN101788596A (zh) * | 2010-01-29 | 2010-07-28 | 王建国 | Tmr电流传感器 |
CN101871787A (zh) * | 2010-06-01 | 2010-10-27 | 王建国 | 一种薄膜磁阻传感器 |
CN102323467A (zh) * | 2011-08-31 | 2012-01-18 | 清华大学 | 一种采用非晶合金磁环结构的巨磁电阻效应电流传感器 |
-
2012
- 2012-06-20 CN CN201210205416.8A patent/CN102680009B/zh not_active Ceased
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0580473A1 (fr) * | 1992-07-15 | 1994-01-26 | ABB CONTROL Société Anonyme | Transformateur asservi d'intensité pour courants continus, alternatifs ou pulses |
EP0580473B1 (fr) * | 1992-07-15 | 1997-02-05 | ABB CONTROL Société Anonyme | Transformateur asservi d'intensité pour courants continus, alternatifs ou pulses |
CN1451159A (zh) * | 2000-11-09 | 2003-10-22 | 日立麦克赛尔株式会社 | 磁记录媒体和磁记录装置 |
CN1505005A (zh) * | 2002-12-04 | 2004-06-16 | ������������ʽ���� | 磁记录媒体及使用该磁记录媒体的磁存储装置 |
US20050083041A1 (en) * | 2003-10-16 | 2005-04-21 | Aaron Schwartzbart | Hybrid inductive sensor |
CN101788596A (zh) * | 2010-01-29 | 2010-07-28 | 王建国 | Tmr电流传感器 |
CN101871787A (zh) * | 2010-06-01 | 2010-10-27 | 王建国 | 一种薄膜磁阻传感器 |
CN102323467A (zh) * | 2011-08-31 | 2012-01-18 | 清华大学 | 一种采用非晶合金磁环结构的巨磁电阻效应电流传感器 |
Non-Patent Citations (2)
Title |
---|
JI-HO PARK等: "Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayer electrodes and an Mgo barrier", 《IEEE TRANSACTIONS ON MAGNETICS》, vol. 45, no. 10, 31 October 2009 (2009-10-31), pages 3476 - 3479, XP011277087, DOI: doi:10.1109/TMAG.2009.2023237 * |
W. X. WANG等: ""The perpendicular anisotropy of Co40Fe40B20 sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junction"", 《AMERICAN INSTITUTE OF PHYSICS》, 5 June 2011 (2011-06-05) * |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015010620A1 (zh) * | 2013-07-24 | 2015-01-29 | 江苏多维科技有限公司 | 一种磁阻混频器 |
EP3026814A1 (en) * | 2013-07-24 | 2016-06-01 | Multidimension Technology Co., Ltd. | Magneto-resistive mixer |
EP3026814A4 (en) * | 2013-07-24 | 2017-05-10 | Multidimension Technology Co., Ltd. | Magneto-resistive mixer |
US9768726B2 (en) | 2013-07-24 | 2017-09-19 | MultiDimension Technology Co., Ltd. | Magnetoresistive mixer |
CN107923956A (zh) * | 2015-06-09 | 2018-04-17 | Inl-国际伊比利亚纳米技术实验室 | 磁阻传感器 |
CN109752578A (zh) * | 2019-03-15 | 2019-05-14 | 江苏多维科技有限公司 | 一种磁隔离器 |
CN114764007A (zh) * | 2021-01-11 | 2022-07-19 | 大银微系统股份有限公司 | 位置感测机构 |
CN114764007B (zh) * | 2021-01-11 | 2024-05-07 | 大银微系统股份有限公司 | 位置感测机构 |
CN113466759A (zh) * | 2021-06-30 | 2021-10-01 | 山东大学 | 单、双轴磁阻磁场传感器和制作方法 |
CN115453432A (zh) * | 2022-11-09 | 2022-12-09 | 南方电网数字电网研究院有限公司 | 石墨烯磁阻传感器及其制备方法、磁阻测量方法 |
CN116449261A (zh) * | 2023-06-05 | 2023-07-18 | 珠海多创科技有限公司 | 磁阻元件及其制备方法、磁传感装置 |
CN116449261B (zh) * | 2023-06-05 | 2023-09-26 | 珠海多创科技有限公司 | 磁阻元件及其制备方法、磁传感装置 |
Also Published As
Publication number | Publication date |
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CN102680009B (zh) | 2015-08-05 |
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Effective date of registration: 20210519 Address after: 215600 building e, No.7, Guangdong Road, Zhangjiagang Free Trade Zone, Zhangjiagang City, Suzhou City, Jiangsu Province Patentee after: MULTIDIMENSION TECHNOLOGY Co.,Ltd. Address before: 2 / F, building 10, 1188 Zhongguan Road, Zhenhai District, Ningbo City, Zhejiang Province Patentee before: NING BO SINOMAGS ELECTRONIC TECHNOLOGY Co.,Ltd. |
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TR01 | Transfer of patent right | ||
IP01 | Partial invalidation of patent right |
Commission number: 4W112523 Conclusion of examination: On the basis of claims 1-7 submitted by the patentee on August 30, 2021, the invention patent No. ZL201210205416.8 is maintained valid Decision date of declaring invalidation: 20220130 Decision number of declaring invalidation: 53870 Denomination of invention: Linear Thin Film Magnetoresistive Sensor Granted publication date: 20150805 Patentee: MULTIDIMENSION TECHNOLOGY Co.,Ltd. |
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IP01 | Partial invalidation of patent right | ||
IW01 | Full invalidation of patent right |
Decision date of declaring invalidation: 20230302 Decision number of declaring invalidation: 422001 Granted publication date: 20150805 |