CN102677146A - Method for manufacturing silicon crystal ingot - Google Patents
Method for manufacturing silicon crystal ingot Download PDFInfo
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- CN102677146A CN102677146A CN2011100669816A CN201110066981A CN102677146A CN 102677146 A CN102677146 A CN 102677146A CN 2011100669816 A CN2011100669816 A CN 2011100669816A CN 201110066981 A CN201110066981 A CN 201110066981A CN 102677146 A CN102677146 A CN 102677146A
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- slide bar
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Abstract
The invention discloses a method for manufacturing a silicon crystal ingot. The method comprises the following steps: putting a polysilicon material into a crucible until the polysilcon material is higher than the preset height of the open end of the crucible; putting a quartz gasket on the polysilicon material; arranging a cover plate on the quartz gasket, wherein the cover plate is matched with the open end of the crucible; blowing inactive gas into the crucible and simultaneously heating the polysilicon material to make the polysilicon material melted into a melt; and performing directional solidification on the melt to obtain the silicon crystal ingot. By the method for manufacturing the silicon crystal ingot, the feeding amount can be improved by 20-30 percent, so that the production efficiency is improved and the manufacturing cost of the crystal ingot is reduced.
Description
Technical field
The present invention relates to the manufacturing field of crystal ingot, relate in particular to the method for making the silicon wafer ingot.
Background technology
In the equipment or system of existing manufacturing silicon wafer ingot; Because being used to produce the raw material of silicon wafer ingot (comprising polycrystal silicon ingot and silicon single crystal ingot) is bulk or particulate state; Have a large amount of slits between the material piece, the solid-state polysilicon feed fusing back volume that causes filling quartz crucible significantly dwindles.Consider production cycle, cost etc., hope at every turn many as much as possible chargings.
Fig. 1 is the structural representation of the crystal ingot stove of prior art at when filling with substance.The crystal ingot stove of prior art comprises: upper furnace body 101 '; With the lower furnace body 102 of said upper furnace body 101 ' match '; Be arranged on the crucible retainer 5 of said lower furnace body 102 ' interior ' with the quartz crucible 2 of crucible retainer 5 ' interior setting '.In addition, for the multiple volatile matter that prevents to produce in the production process in deposition such as the well heater above the body of heater 31 ' wait, usually behind the charged crucible 2 ' on be provided with cover plate 7 '.Consider that from aspects such as high temperature resistant, costs cover plate materials adopts carbon-carbon composite usually.
In order to realize many chargings, can consider when installing the polysilicon feed additional, quartz crucible 2 ' be filled continued install the polysilicon feed additional and make the polysilicon feed quartz crucible 2 ' top pile up, then with cover plate 7 ' be placed on the polysilicon feed.But; Existing cover plate 7 ' the material condition under; For preventing since bulk or granular polycrystalline silicon feed because of build height contact with cover plate caused from cover plate 7 ' the carbon component of lower surface sneak in the polycrystalline melt; Thereby avoid because the excessive deterioration of sneaking into caused ingot quality of carbon component, in the process of charging, must control feeding quantity to avoid cover plate 7 ' contact with the polysilicon feed.
In addition; Existing cover plate 7 ' with crucible retainer 5 ' structural condition under; After the polysilicon feed is built height, cover plate 7 ' can not be with respect to quartz crucible 2 ' accurate location, in follow-up change material process; Cover plate 7 ' may landing or depart from its with quartz crucible 2 ' relative position, thereby can cause the multiple volatile matter of production the well heater above the body of heater 31 ' on problem such as deposition.
Therefore there is certain restriction in existing equipment on charge, and charge directly determines production efficiency and cost.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of method of making the silicon wafer ingot, said method can improve the polysilicon feeding coal that once loads, thereby enhances productivity.
To achieve these goals, the method according to the manufacturing silicon wafer ingot of first aspect present invention embodiment may further comprise the steps: the polysilicon feed is put into crucible exceeds said crucible until said polysilicon feed opening end predetermined height; On said polysilicon feed, place quartzy pad; On said quartzy pad, cover plate is set, the size of wherein said cover plate is suitable for covering the opening end of said crucible; Heat said polysilicon feed so that it is molten into melt when in said crucible, jetting non-active gas; And make said melt directional freeze, obtain the silicon wafer ingot.
Method according to the manufacturing silicon wafer ingot of the embodiment of the invention; Through on the polysilicon feed, placing quartzy pad; Can avoid said polysilicon feed directly to contact, thereby when can realizing many chargings, can guarantee the quality of prepared silicon wafer ingot with said cover plate.
According to one embodiment of present invention; Said crucible is kept by the crucible retainer; Be formed with on the said crucible retainer on first guide part and the said cover plate and be formed with second guide part, said first guide part and said second guide part adaptive with make in its process that is molten into melt at the said polysilicon feed of heating the said cover plate of guiding with respect to said crucible retainer in the vertical direction to lower slip.
According to one embodiment of present invention, said first guide part is the slide bar that is formed on the roof of said crucible retainer, and said second guide part is the guide through hole that is formed on said side edge thereof, and the external diameter of the internal diameter of said guide through hole and said litter is adaptive.Alternatively, the height of said slide bar is 1/4～1/2 of a said crucible height.
According to one embodiment of present invention; Said first guide part is the guide that is formed on the sidewall outside surface of said crucible retainer; Said second guide part is the slide bar that is formed on said side edge thereof, and the degree of depth of the adaptive and said guide of the external diameter of said guide size and said slide bar is corresponding with the height of said slide bar.Alternatively; Said first guide part is the pilot hole that is formed in the sidewall of said crucible retainer; Said second guide part is the slide bar that is formed on said side edge thereof, the internal diameter of said pilot hole and the external diameter of said slide bar is adaptive and the height of the degree of depth of said pilot hole and said slide bar is corresponding.Wherein, the height of said slide bar can be 1/4～1/2 of said crucible height.
According to one embodiment of present invention, said slide bar is formed with the tapering of 0.1-15 degree and the chap gradually to the top from the bottom of said slide bar with respect to above-below direction.
Wherein, said quartzy pad can be circular pad, ring washer or square washer.
According to one embodiment of present invention, before the polysilicon feed is put into crucible, put into seed crystal, to be used to make silicon single crystal ingot in crucible bottom.
Additional aspect of the present invention and advantage part in the following description provide, and part will become obviously from the following description, or recognize through practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously with easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, wherein:
Fig. 1 has shown the structural representation of the crystal ingot finishing stove when filling with substance of prior art;
Fig. 2 a has shown the schematic flow sheet of the method for manufacturing silicon wafer ingot according to an embodiment of the invention;
Fig. 2 b has shown the schematic flow sheet of the method for manufacturing silicon wafer ingot according to another embodiment of the invention;
Fig. 3 has shown the structural representation of crystal ingot finishing stove under the charging completion status when method of utilizing manufacturing silicon wafer ingot according to an embodiment of the invention is made the silicon wafer ingot; And
Fig. 4 has shown that the master who makes quartzy pad employed in the method for silicon wafer ingot according to an embodiment of the invention looks synoptic diagram.
Embodiment
Describe embodiments of the invention below in detail, the example of said embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Be exemplary through the embodiment that is described with reference to the drawings below, only be used to explain the present invention, and can not be interpreted as limitation of the present invention.
To describe the method for manufacturing silicon wafer ingot according to an embodiment of the invention below with reference to Fig. 2 a, Fig. 2 b and Fig. 3 in detail.Wherein, Fig. 2 a has shown the schematic flow sheet of the method for manufacturing silicon wafer ingot according to an embodiment of the invention; Fig. 2 b has shown the schematic flow sheet of the method for manufacturing silicon wafer ingot according to another embodiment of the invention; Fig. 3 has shown the structural representation of crystal ingot finishing stove under the charging completion status when method of utilizing manufacturing silicon wafer ingot according to an embodiment of the invention is made the silicon wafer ingot.
Need to prove; Although the manufacturing of silicon wafer ingot has been discussed in following specification sheets; But technology described herein is not limited to the manufacturing of silicon wafer ingot, and those of ordinary skill also can be applicable to other multiple materials (for example Ge, GaAs etc.), oxide compound (for example sapphire, YAG etc.) or fluorochemical (MgF for example with the method that is used to improve the manufacturing silicon wafer ingot of charging capability of the present invention after having read technical scheme of the present invention
2, CaF
2) wait in the manufacturing of crystal ingot.
Shown in Fig. 2 a, may further comprise the steps according to the method for the manufacturing silicon wafer ingot of the embodiment of the invention: the polysilicon feed is put into crucible exceeds said crucible until said polysilicon feed opening end predetermined height; On said polysilicon feed, place quartzy pad; On said quartzy pad, cover plate is set, the size of wherein said cover plate is suitable for covering the opening end of said crucible; Heat said polysilicon feed so that it is molten into melt when in said crucible, jetting non-active gas; And make said melt directional freeze, obtain the silicon wafer ingot.
Method according to the manufacturing silicon wafer ingot of the embodiment of the invention; Through on the polysilicon feed, placing quartzy pad; Can avoid said polysilicon feed directly to contact, thereby when can realizing many chargings, can guarantee the quality of prepared silicon wafer ingot with said cover plate.Method according to the manufacturing silicon wafer ingot of the embodiment of the invention can once improve 20-30% with smelting material amount, and this can greatly cut down the consumption of energy, reduce the production cycle and enhance productivity simultaneously in the production process of polycrystalline ingot.Evidence, the quartz plate that contacts with cover plate at high temperature can not adhere on the cover board.In addition, the method according to the manufacturing silicon wafer ingot of the embodiment of the invention has the following advantages: 1) simple to operation; 2) quartzy pad is cheap comparatively speaking, and cost is low; 3) high quartzy pad can soften (still having enough strength support cover plates) following of 1400-1500 degree centigrade high temperature; Can not melt; Also be difficult for adhering on the cover plate of carbon material, therefore can prevent effectively that cover plate from contacting with the polysilicon feed, thereby can avoid from impurity such as cover plate introducing carbon components; 4) though the quartzy pad in polysilicon feed fusing back will fall into melt; And because the density of quartzy pad is lower than silicon melt; Therefore the silicon melt surface can be floated over, silicon melt can be do not polluted, and after the directional freeze completion; Quartzy pad remains in the ingot casting surface, can remove simply through the physical method (perhaps beaing like sandblast) or the method for chemical corrosion (HF corrosion).To sum up, the method for the manufacturing silicon wafer ingot through the embodiment of the invention guarantees that the quality of silicon wafer ingot is unaffected when can realize many chargings.
In addition, shown in Fig. 2 b, can also may further comprise the steps, that is: before the polysilicon feed is put into crucible, put into seed crystal, to be used to make silicon single crystal ingot in crucible bottom according to the method for the manufacturing silicon wafer ingot of the embodiment of the invention.
In other words, the method according to the manufacturing silicon wafer ingot of the embodiment of the invention had both gone for making polycrystal silicon ingot, also went for making silicon single crystal ingot.
In order more to be expressly understood method according to the manufacturing silicon wafer ingot of the embodiment of the invention, the structural representation of crystal ingot finishing stove under the charging completion status when describing the method manufacturing silicon wafer ingot that utilizes manufacturing silicon wafer ingot according to the above embodiment of the present invention with reference to Fig. 3 below.As shown in Figure 3, this crystal ingot finishing stove 100 comprises: upper furnace body 101; Lower furnace body 102, lower furnace body 102 match with upper furnace body 101 to form furnace space 104; Crucible 2, this crucible 2 are arranged in the lower furnace body 102 and its inner polysilicon feed 1 that accommodates, and wherein polysilicon feed 1 is built high (promptly exceeding the opening end predetermined height of crucible) in this crucible 2; At least one well heater 31,32, said well heater 31,32 are used for heating crucible 1 and melt the feed that is contained in crucible 1; Crucible retainer 5, said crucible retainer 5 is used to keep said crucible 1; Heat insulating member 4, this heat insulating member 4 is contained in the furnace space 104, and be configured to vertically removable with respect to crucible 2, with the directional freeze of the polycrystal silicon ingot in the control crucible 2; Quartzy pad 9, this quartz pad 9 is set at the top of polysilicon feed 1; With the cover plate 7 that is arranged on these quartz pad 9 tops.Cover plate 7 can stop the volatile matter of silicon melt directly to deposit on the top heater 31 and other lagging materials of crucible 2 tops.
Need to prove; The structure that in cover plate 7, has gas entrance hole 72 has been shown in Fig. 3; For example the silicon melt that imports in the crucible 1 of the rare gas element that waits of argon gas (Ar) is surperficial for this gas entrance hole 72; And a plurality of air outlet openings outflows that are provided with around the top through crucible 2, thereby can take away various volatile matters through said rare gas element.But the invention is not restricted to this, for example, can also be not on the cover board this gas port 72 be set on 7, and from the side-blown gas in the slit between cover plate 7 and the crucible 2, and air-flow is flowed out from the slit of opposite side, come to take away various volatile matters with this through said rare gas element.
Preferably; Be formed with on the crucible retainer 5 first guide part 51 and be formed with on the cover plate 7 second guide part, 71, the first guide parts 51 and second guide part 71 match with make in its process that is molten into melt at the said polysilicon feed of heating guiding cover plate 7 with respect to crucible retainer 5 in the vertical directions to lower slip.Thus, can satisfy can also guarantee when adding to expect cover plate 7 in the melt process not occurrence positions problem such as depart from.
Wherein, the concrete shape of first guide part 51 and second guide part 71 does not have particular restriction.For example, in certain embodiments, first guide part 51 can be the slide bar of the roof that is formed on crucible retainer 5, and second guide part 71 is for being formed on the guide through hole at cover plate 7 edges, and the external diameter of the internal diameter of said guide through hole and said litter is adaptive; In further embodiments; First guide part 51 is the guide on the sidewall outside surface that is formed on crucible retainer 5; Second guide part 71 is for being formed on the slide bar at cover plate 7 edges, and the degree of depth of the adaptive and said guide of the external diameter of said guide size and said slide bar is corresponding with the height of said slide bar; In other embodiments; First guide part 51 is the pilot hole in the sidewall that is formed on crucible retainer 5; Second guide part 71 is for being formed on the slide bar at cover plate 7 edges, the internal diameter of said pilot hole and the external diameter of said slide bar is adaptive and the height of the degree of depth of said pilot hole and said slide bar is corresponding.
Number about first guide part 51 and second guide part 71 does not have particular restriction, for example, can form two pairs first guide parts 51 and second guide part 71 respectively as shown in Figure 3, can also form first guide part 51 and second guide part 71 more than four pairs respectively.
In order to reduce the influence to gas transmission, alternatively, the height of said slide bar is 1/4～1/2 of a said crucible height.
In addition, can also make the litter in the foregoing description be formed with the tapering of 0.1-15 degree, and said guide 8 is tapered from top to bottom with respect to above-below direction.Thus, can make the held stationary of cover plate 7, and finally be fixed on the open end of crucible 2 with respect to the slip of crucible 2 through said litter with tapering.
To quartzy pad 9 be described with reference to Fig. 4 below.
Shape about quartzy pad 9 does not have special limitation.For example, in certain embodiments, can adopt circular pad as shown in Figure 4.Particularly; The top that circular quartzy pad is placed polysilicon feed 1 to be isolating polysilicon feed 1 and cover plate 7, thereby can avoid thus causing contacting introduction impurity with the silicon material at silicon material higher position cover plate 7 because of the difference of altitude that the surface of silicon material in whole melt process occurs.Certainly, also can also adopt ring washer or square washer etc.Particularly; Behind polysilicon feed 1 reinforced the end; Above polysilicon feed 1; Turning up the soil at interval in the many places of in-plane respectively is provided with a plurality of ring washers or square washer isolating polysilicon feed 1 and cover plate 7, thereby likewise also can avoid causing contacting introduction impurity with the silicon material at silicon material higher position cover plate 7 because of the difference of altitude that the surface of silicon material in whole melt process occurs.
Need to prove that any mentioning " embodiment ", " embodiment ", " illustrative examples " etc. mean the concrete member, structure or the characteristics that combine this embodiment to describe and be contained among at least one embodiment of the present invention.Not necessarily refer to identical embodiment in this schematic statement everywhere of this specification sheets.And when combining any embodiment to describe concrete member, structure or characteristics, what advocated is, realizes that in conjunction with other embodiment such member, structure or characteristics all drop within those skilled in the art's the scope.
Although carried out detailed description with reference to a plurality of illustrative examples specific embodiments of the invention of the present invention; But it must be understood that; Those skilled in the art can design multiple other improvement and embodiment, and these improve and embodiment will drop within the spirit and scope.Particularly, within the scope of aforementioned open, accompanying drawing and claim, can make rational modification and improvement aspect the layout of component and/or subordinate composite configuration, and can not break away from spirit of the present invention.Except the modification and the improvement of component and/or layout aspect, its scope is limited accompanying claims and equivalent thereof.
Claims (10)
1. a method of making the silicon wafer ingot is characterized in that, may further comprise the steps:
The polysilicon feed is put into crucible exceeds said crucible until said polysilicon feed opening end predetermined height;
On said polysilicon feed, place quartzy pad;
On said quartzy pad, cover plate is set, the size of wherein said cover plate is suitable for covering the opening end of said crucible;
Heat said polysilicon feed so that it is molten into melt when in said crucible, jetting non-active gas; And make said melt directional freeze, obtain the silicon wafer ingot.
2. the method for manufacturing silicon wafer ingot according to claim 1 is characterized in that,
Said crucible is kept by the crucible retainer,
Be formed with on the said crucible retainer on first guide part and the said cover plate and be formed with second guide part, said first guide part and said second guide part adaptive with make in its process that is molten into melt at the said polysilicon feed of heating the said cover plate of guiding with respect to said crucible retainer in the vertical direction to lower slip.
3. the method for manufacturing silicon wafer ingot according to claim 2 is characterized in that,
Wherein, said first guide part is the slide bar that is formed on the roof of said crucible retainer, and said second guide part is the guide through hole that is formed on said side edge thereof, and the external diameter of the internal diameter of said guide through hole and said litter is adaptive.
4. the method for manufacturing silicon wafer ingot according to claim 3 is characterized in that,
The height of said slide bar is 1/4～1/2 of a said crucible height.
5. the method for manufacturing silicon wafer ingot according to claim 2 is characterized in that,
Wherein, Said first guide part is the guide that is formed on the sidewall outside surface of said crucible retainer; Said second guide part is the slide bar that is formed on said side edge thereof, and the degree of depth of the adaptive and said guide of the external diameter of said guide size and said slide bar is corresponding with the height of said slide bar.
6. the method for manufacturing silicon wafer ingot according to claim 2 is characterized in that,
Wherein, Said first guide part is the pilot hole that is formed in the sidewall of said crucible retainer; Said second guide part is the slide bar that is formed on said side edge thereof, the internal diameter of said pilot hole and the external diameter of said slide bar is adaptive and the height of the degree of depth of said pilot hole and said slide bar is corresponding.
7. according to the method for claim 5 or 6 described manufacturing silicon wafer ingots, it is characterized in that,
The height of said slide bar is 1/4～1/2 of a said crucible height.
8. according to the method for each described manufacturing silicon wafer ingot in the claim 3 to 6, it is characterized in that said slide bar is formed with the tapering of 0.1-15 degree and the chap gradually to the top from the bottom of said slide bar with respect to above-below direction.
9. the method for manufacturing silicon wafer ingot according to claim 1 is characterized in that,
Wherein, said quartzy pad is circular pad, ring washer or square washer.
10. the method for manufacturing silicon wafer ingot according to claim 1 is characterized in that, and is further comprising the steps of:
Before the polysilicon feed is put into crucible, put into seed crystal in crucible bottom, to be used to make silicon single crystal ingot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100669816A CN102677146A (en) | 2011-03-18 | 2011-03-18 | Method for manufacturing silicon crystal ingot |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011100669816A CN102677146A (en) | 2011-03-18 | 2011-03-18 | Method for manufacturing silicon crystal ingot |
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| CN102677146A true CN102677146A (en) | 2012-09-19 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101871124A (en) * | 2010-06-02 | 2010-10-27 | 王敬 | System for manufacturing polycrystalline ingot with improved charging capability |
| CN101914805A (en) * | 2010-09-07 | 2010-12-15 | 王楚雯 | Directional solidification furnace with improved crucible cover part |
| CN201670893U (en) * | 2010-06-02 | 2010-12-15 | 王敬 | System with improved feeding ability and used for manufacturing polycrystalline ingots |
| CN101914806A (en) * | 2010-09-07 | 2010-12-15 | 王楚雯 | Unidirectional solidification furnace with improved gas path |
| CN201762479U (en) * | 2010-09-25 | 2011-03-16 | 王敬 | Directional solidification furnace provided with heat prevention part on bottom end of side wall of crucible |
-
2011
- 2011-03-18 CN CN2011100669816A patent/CN102677146A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101871124A (en) * | 2010-06-02 | 2010-10-27 | 王敬 | System for manufacturing polycrystalline ingot with improved charging capability |
| CN201670893U (en) * | 2010-06-02 | 2010-12-15 | 王敬 | System with improved feeding ability and used for manufacturing polycrystalline ingots |
| CN101914805A (en) * | 2010-09-07 | 2010-12-15 | 王楚雯 | Directional solidification furnace with improved crucible cover part |
| CN101914806A (en) * | 2010-09-07 | 2010-12-15 | 王楚雯 | Unidirectional solidification furnace with improved gas path |
| CN201762479U (en) * | 2010-09-25 | 2011-03-16 | 王敬 | Directional solidification furnace provided with heat prevention part on bottom end of side wall of crucible |
Non-Patent Citations (2)
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| 江东亮等: "《无机非金属材料手册（上）》", 31 July 2009, article "石英玻璃", pages: 722 * |
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Application publication date: 20120919 |