CN102662033A - Structure of test cavity - Google Patents
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- CN102662033A CN102662033A CN2012101572140A CN201210157214A CN102662033A CN 102662033 A CN102662033 A CN 102662033A CN 2012101572140 A CN2012101572140 A CN 2012101572140A CN 201210157214 A CN201210157214 A CN 201210157214A CN 102662033 A CN102662033 A CN 102662033A
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Abstract
The invention discloses a structure of a test cavity in the technical field of a gas sensor. The structure of the test cavity comprises an airflow inlet 1, an energy converter 2, an inner wall medium layer 3, a sensitive membrane 4, a test cavity 5, an airflow outlet 6 and an air pump. The test cavity is connected with the air pump through a capillary tube. With the adoption of the structure provided by the invention, the inflation volume inside the test cavity is reduced. At the same airflow, the air concentration which is close to the sensitive membrane 4 is rapidly changed, and the energy converter can achieve a stable state in a rapider manner, so that the response time of the energy converter is shortened. An area of the inner wall of the test cavity is reduced, so that the amount of absorbing the air to be detected through the inner wall is reduced. Furthermore, the absorption amount of substances to be detected through the area of the inner wall in a unit is reduced by selecting a material of the inner wall which difficultly adsorbs the air to be detected or coating the medium material on the inner wall, so that the detection precision is improved and the detection limitation value is reduced.
Description
Technical field
The present invention relates to the gas sensor technical field, relate in particular to a kind of test chamber structure.
Background technology
Gas sensor has application promise in clinical practice in fields such as IAQ detection, industrial environment detection, food industry detection, battlefield surroundings early warning, anti-terrorism early warning; After integrating with Internet of Things, can increase substantially the quality and the efficient of social production life.Yet the drawbacks limit of moment sensor self its large-scale application, wherein main defective has: 1, sensor's response overlong time; 2, the sensor error is bigger, especially when light concentration gas is detected, has directly influenced accuracy of detection; 3, the detection limits of sensor is too high, can not satisfy the demands.
Cause long main cause of sensor response time that 2 points are arranged at present: the one, the perception that changes of quantity of information is too slow to external world for sensitive mechanism and transducer technology; The 2nd, test chamber inner inflatable volume is excessive, and it is excessive promptly to test the gentle flow inlet and outlet volume of cavity charging volume sum, causes near the tested gas concentration pace of change the sensitive membrane too slow.Problem that it should be noted that sensor sensing mechanism and transducer technology sometimes and be not easy to solve; Thereby the sensor response time, long problem can only be improved through other aspects.
Test chamber inner inflatable volume means that greatly inner wall area is big, and the sensor inwall is also just very big to the absorption of tested gas and the amount of condensing, so has only the tested gas of part to work to sensitive membrane in the atmosphere.In addition, adsorb and the gas flow that condenses receives influence of various factors such as environment temperature, humidity and tested gas concentration, back-end algorithm is difficult to reject its influence.These factors can only be regarded stochastic error as, and this has not only reduced the accuracy of detection of sensor, have also improved the detection limits of sensor, have to improve the alarm threshold value of sensor for avoiding the false-alarm wrong report, and this is to exchange reliability for any sacrifice in performance.The problems referred to above are several problems of the maximum of sensor practicability.
Inwall or inwall coating material are main methods that reduces inwall absorption.Select suitable inner-wall material, or on inwall, apply one deck coating.In the material that uses at present, metal (mainly being gold), glass, teflon (Teflon) are minimum to the absorption of tested gas.For normal temperature is the tested gas of gas, for example CO
2, CO, O
2, SO
2And H
2S etc. only require inwall or coating chemical inertness, do not get final product with tested gas generation chemical reaction.For being steam under the normal temperature and meeting the tested gas that drop is become in condensation that for example VOC VOC steam (benzene series thing, organic chloride, freon series, organic ketone, amine, alcohol, ether, ester, acid and petroleum hydrocarbon compound etc.) then requires higher." cold " surface of metal part of can condensing gets into the steam in the test chamber, and on the detectable concentration of ppm even ppb level, this condensing of metal can produce bigger error to the result, thereby glass and teflon are more suitable.
Summary of the invention
To above-mentioned prior art, the technical matters that the present invention will solve is: the response time of the gas sensor in the existing sensor test chamber is longer, and sensor gas detection precision is low bigger with detection limits.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of test chamber structure; Comprise airflow inlet, transducer, inwall dielectric layer, sensitive membrane, test chamber, air stream outlet, air pump; Test chamber is connected through kapillary with air pump; It is characterized in that the three-dimensional dimension of said test chamber has one dimension at least in micron dimension, the gas circuit sectional dimension that connects extraneous and test chamber is micron to a millimeter magnitude.
The three-dimensional dimension of said test chamber is 2mm * 2mm * 300um～4mm * 4mm * 300um; The gas circuit that connects extraneous and test chamber is of a size of: air intake opening 0.3mm * 0.03mm * 200um～0.5mm * 0.05mm * 300um, gas outlet 3mm * 0.2mm * 200um～5mm * 0.3mm * 300um.
Transducer according to the invention is the part of test chamber inwall and is arranged in the test chamber.
Material capillaceous according to the invention is a kind of in the semiconductor materials such as silicon, silicon dioxide, gallium arsenide, silicon nitride.
The inwall dielectric layer of test chamber according to the invention is that little, the chemically inert material of surface tension is perhaps at little, the chemically inert dielectric material of inwall dielectric layer surface-coated one deck tool surface tension.
Inwall dielectric layer of the present invention is a kind of in gold, platinum, palladium, titanium, rhodium, iridium, osmium, ruthenium, teflon, Parylene, polybutylene, polystyrene, glass, amorphous silica, monocrystalline silicon dioxide, silicon, silicon nitride, aluminium oxide, gallium arsenide and the metal oxide.
The dielectric material that applies on the inwall dielectric layer of the present invention surface is a kind of in gold, platinum, palladium, titanium, rhodium, iridium, osmium, ruthenium, teflon, Parylene, polybutylene, polystyrene, glass, amorphous silica, monocrystalline silicon dioxide, silicon, aluminium oxide, silicon nitride, gallium arsenide, metal oxide and the fused quartz etc.
Sensitive membrane according to the invention is a kind of in organic polymer, organic molecule, metal, metal oxide, nonmetal oxide and the biomaterial.
Subsidiary heating of transducer according to the invention and function of temperature control, a kind of in mass type, thermoinduction type, optics, conductivity type, capacitor type, the galvanochemistry type.
Transducer use air pump of the present invention environmental gas is to external world sampled.
The sealing means of test chamber of the present invention is for being bonding or being one deck dielectric material covering whole energy transducer periphery.
Compared with prior art, the beneficial effect that has of the present invention shows:
One, test cavity, airflow inlet size have been contracted to micron dimension; Reduce test chamber inner inflatable volume and promptly reduced inner wall area; Further reduced the adsorption area of inwall to tested gas; Therefore reduce the interference of inwall adsorbed gas, reduce and detect error, improve accuracy of detection testing result.
Two, the test chamber inwall adopts the dielectric material that little, the chemically inert material of surface tension perhaps has this type of character at its surface-coated one deck; To reduce the unit area adsorbance of inwall to tested gas; Thereby reduce the interference of inwall absorption to testing result; Reduce and detect error, improve accuracy of detection.
Three, dwindle test chamber inner inflatable volume and promptly test the gentle flow inlet and outlet volume of cavity charging volume sum, be aided with each item performance that suitable inner-wall material or inside coating can effectively improve sensor, promote sensor practicability and popularize.
Description of drawings
Fig. 1 is a cut-open view of the present invention;
Fig. 2 is a three-dimensional effect diagram of the present invention;
Reference numeral is: 1 for airflow inlet, 2 is that transducer, 3 is that inwall dielectric layer, 4 is that sensitive membrane, 5 is the test cavity, and 6 is that air stream outlet, 7 is an air pump.
Embodiment
To combine accompanying drawing and embodiment that the present invention is done further description below.
A kind of test chamber structure; Comprise airflow inlet, transducer, inwall dielectric layer, sensitive membrane, test chamber, air stream outlet, air pump; Test chamber is connected through kapillary with air pump; Dwindle test chamber inner inflatable volume, the three-dimensional dimension of said test chamber has one dimension at least in micron dimension, and the gas circuit sectional dimension that connects extraneous and test chamber is micron to a millimeter magnitude.Said transducer is the part of test chamber inwall or is arranged in the test chamber.Said material capillaceous is a kind of in the semiconductor materials such as silicon, silicon dioxide, gallium arsenide, silicon nitride.The inwall dielectric layer of said test chamber is that little, the chemically inert material of surface tension is perhaps at little, the chemically inert dielectric material of inwall dielectric layer surface-coated one deck tool surface tension.Said sensitive membrane is a kind of in organic polymer, organic molecule, metal, metal oxide, nonmetal oxide and the biomaterial.
Wherein said inwall dielectric layer is a gold; Platinum; Palladium; Titanium; Rhodium; Iridium; Osmium; Ruthenium; Teflon; Parylene; Polybutylene; Polystyrene; Glass; Amorphous silica; Monocrystalline silicon dioxide; Silicon; Silicon nitride; Aluminium oxide; The dielectric material that applies on a kind of or inwall dielectric layer surface in gallium arsenide and the metal oxide is gold; Platinum; Palladium; Titanium; Rhodium; Iridium; Osmium; Ruthenium; Teflon; Parylene; Polybutylene; Polystyrene; Glass; Amorphous silica; Monocrystalline silicon dioxide; Silicon; Aluminium oxide; Silicon nitride; Gallium arsenide; A kind of in metal oxide and the fused quartz etc.
Subsidiary heating of said transducer and function of temperature control, a kind of in mass type (piezoelectricity acoustic wave device, semi-girder), thermoinduction type, optics, conductivity type, capacitor type, the galvanochemistry type, and use air pump to external world environmental gas sample.
The preparation method of test chamber structure provided by the present invention is following:
As shown in Figure 1, this test chamber structure comprises, airflow inlet 1, transducer 2, inwall dielectric layer 3, sensitive membrane 4, test chamber 5, air stream outlet 6, air pump 7.Adopt deep reaction ion etching DRIE prepared to go out area 2mm * 2mm on the monocrystalline silicon substrate surface; The groove of degree of depth 300um; The groove two ends respectively prepare a narrow groove, and specification is respectively area 0.5mm * 0.05mm, degree of depth 300um and area 5mm * 0.3mm, degree of depth 300um.Groove, narrow groove are respectively test chamber 5 and the gas circuit (import and export of air-flow) after the encapsulation.Another silicon substrate surface preparation interdigital transducer 2, platinum well heater and platinum temperature sensor, both essence of back all are platinum resistors.Except that interdigital transducer 2, platinum well heater and platinum temperature sensor, the test chamber inwall all prepares one deck parylene film and keeps away dielectric layer 3 in forming.Prepare one deck polyethylene oxide sensitive thin film on the interdigital transducer surface with gas blowout mist technology.Two silicon chips are combined, use baffle plate to block air-flow and import and export, prepare one deck parylene film, block all slits, accomplish encapsulation, promptly obtain test chamber 5, airflow inlet 1 and air stream outlet 6 at whole test chamber outside surface.The test chamber range of size is 2mm * 2mm * 300um～4mm * 4mm * 300um, and optimum dimension is 2mm * 2mm * 300um; The range of size of airflow inlet 1 is 0.3mm * 0.03mm * 200um～0.5mm * 0.05mm * 300um; Optimum dimension is 0.5mm * 0.05mm * 300um; The range of size of air stream outlet 6 is 3mm * 0.2mm * 200um～5mm * 0.3mm * 300um, and optimum dimension is 5mm * 0.3mm * 300um.Mode through back-off will be deposited with the sensor of interdigital transducer and put into test chamber, and the substrate of sensor also is the part of test chamber structure.Quartz capillary connects test chamber and air pump, and an end capillaceous inserts the air stream outlet of test chamber, and with the epoxide-resin glue sealing, kapillary is connected with the stainless-steel tube of air pump through adapter.
Adopt the groove that deep reaction ion etching DRIE prepared goes out and the narrow groove at groove two ends on monocrystalline silicon substrate surface.Encapsulating method can use one deck dielectric material to cover the peripheral or bonding method of whole energy transducer.Encapsulating method adopts the Direct Bonding method during for bonding.The Direct Bonding method is normally earlier carried out the water wettability pre-service to silicon chip surface before bonding, then at room temperature silicon chip is carried out bonding, and the para-linkage silicon chip is through 1000 ℃ of left and right sides high annealings, to reach final bond strength then.
In the present invention, the charging volume of test cavity gentle flow inlet and outlet is reduced to about 0.4uL from traditional 100mL, and the response time is shortened to about 0.5s by 3min, and the error of response reduces to 0.01% from 5%, and detection limits is reduced to about 5ppm from 1000ppm.
Claims (10)
1. test chamber structure; Comprise airflow inlet, transducer, inwall dielectric layer 3, sensitive membrane 4, test chamber, air stream outlet, air pump; Test chamber is connected through kapillary with air pump; It is characterized in that the three-dimensional dimension of said test chamber has one dimension at least in micron dimension, the gas circuit sectional dimension that connects extraneous and test chamber is micron to a millimeter magnitude.
2. test chamber structure according to claim 1; It is characterized in that; The three-dimensional dimension of said test chamber is 2mm * 2mm * 300um～4mm * 4mm * 300um; The gas circuit that connects extraneous and test chamber is of a size of: air intake opening 0.3mm * 0.03mm * 200um～0.5mm * 0.05mm * 300um, gas outlet 3mm * 0.2mm * 200um～5mm * 0.3mm * 300um.
3. test chamber structure according to claim 1 is characterized in that, said transducer is that interdigital transducer is the part of test chamber inwall and is arranged in the test chamber.
4. test chamber structure according to claim 1 is characterized in that, said material capillaceous is a kind of in the semiconductor materials such as silicon, silicon dioxide, gallium arsenide, silicon nitride.
5. test chamber structure according to claim 1 is characterized in that, the inwall dielectric layer of said test chamber is that little, the chemically inert material of surface tension is perhaps at little, the chemically inert dielectric material of inwall dielectric layer surface-coated one deck tool surface tension.
6. test chamber structure according to claim 4; It is characterized in that wherein said inwall dielectric layer is a kind of in gold, platinum, palladium, titanium, rhodium, iridium, osmium, ruthenium, teflon, Parylene, polybutylene, polystyrene, glass, amorphous silica, monocrystalline silicon dioxide, silicon, silicon nitride, aluminium oxide, gallium arsenide and the metal oxide etc.
7. test chamber structure according to claim 4; It is characterized in that the dielectric material that wherein applies on the inwall dielectric layer surface is a kind of in gold, platinum, palladium, titanium, rhodium, iridium, osmium, ruthenium, teflon, Parylene, polybutylene, polystyrene, glass, amorphous silica, monocrystalline silicon dioxide, silicon, aluminium oxide, silicon nitride, gallium arsenide, metal oxide and the fused quartz etc.
8. test chamber structure according to claim 1 is characterized in that, said sensitive membrane is a kind of in organic polymer, organic molecule, metal, metal oxide, nonmetal oxide and the biomaterial.
9. test chamber structure according to claim 2 is characterized in that, subsidiary heating of said transducer and function of temperature control, a kind of in mass type, thermoinduction type, optics, conductivity type, capacitor type, the galvanochemistry type.
10. test chamber structure according to claim 2 is characterized in that, through air pump to external world environmental gas sample.
Priority Applications (1)
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|---|---|---|---|
| CN2012101572140A CN102662033A (en) | 2012-05-21 | 2012-05-21 | Structure of test cavity |
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|---|---|---|---|
| CN2012101572140A CN102662033A (en) | 2012-05-21 | 2012-05-21 | Structure of test cavity |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104407035A (en) * | 2014-11-14 | 2015-03-11 | 无锡信大气象传感网科技有限公司 | Gas sensor chip |
| CN107462615A (en) * | 2017-07-31 | 2017-12-12 | 广东美的制冷设备有限公司 | Electrochemical gas sensor and air conditioner |
| CN107561230A (en) * | 2017-10-31 | 2018-01-09 | 电子科技大学中山学院 | Air detection mechanism based on electric signal or wireless control |
| CN111366390A (en) * | 2020-03-18 | 2020-07-03 | 上海电力大学 | Portable aerator oxygenation performance on-site on-line measuring device and method |
| CN111537670A (en) * | 2020-04-20 | 2020-08-14 | 中国科学院上海微系统与信息技术研究所 | Top contact type gas testing cavity and dynamic gas testing system applying same |
| CN117405651A (en) * | 2023-12-15 | 2024-01-16 | 武汉理工大学 | Rhodium-plated metal capillary, preparation method thereof and gas Raman spectrum detection system |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104407035A (en) * | 2014-11-14 | 2015-03-11 | 无锡信大气象传感网科技有限公司 | Gas sensor chip |
| CN107462615A (en) * | 2017-07-31 | 2017-12-12 | 广东美的制冷设备有限公司 | Electrochemical gas sensor and air conditioner |
| CN107462615B (en) * | 2017-07-31 | 2019-10-25 | 广东美的制冷设备有限公司 | Electrochemical gas sensor and air conditioner |
| CN107561230A (en) * | 2017-10-31 | 2018-01-09 | 电子科技大学中山学院 | Air detection mechanism based on electric signal or wireless control |
| CN111366390A (en) * | 2020-03-18 | 2020-07-03 | 上海电力大学 | Portable aerator oxygenation performance on-site on-line measuring device and method |
| CN111537670A (en) * | 2020-04-20 | 2020-08-14 | 中国科学院上海微系统与信息技术研究所 | Top contact type gas testing cavity and dynamic gas testing system applying same |
| CN111537670B (en) * | 2020-04-20 | 2022-06-10 | 中国科学院上海微系统与信息技术研究所 | Top contact type gas testing cavity and dynamic gas testing system applying same |
| CN117405651A (en) * | 2023-12-15 | 2024-01-16 | 武汉理工大学 | Rhodium-plated metal capillary, preparation method thereof and gas Raman spectrum detection system |
| CN117405651B (en) * | 2023-12-15 | 2024-03-22 | 武汉理工大学 | Rhodium-plated metal capillary, preparation method thereof and gas Raman spectrum detection system |
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Application publication date: 20120912 |